CN116190315A - 一种接触通孔及制作方法 - Google Patents
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Abstract
本发明提供一种接触通孔及制作方法,该方法包括:提供一衬底,于衬底上形成自下而上层叠的层间介质层、底部抗反射层和光刻胶层,并图形化光刻胶层以形成光刻胶层开口;基于图形化的光刻胶层刻蚀底部抗反射层,其中,刻蚀底部抗反射层通入的气体包括C4F8,以形成漏斗状的底部抗反射层开口;刻蚀层间介质层以形成接触通孔。本发明的接触通孔及制作方法中,采用C4F8刻蚀底部抗反射层形成漏斗状底部抗反射层开口,减小接触通孔的关键尺寸;另外,刻蚀层间介质层时加入辅助气体,在光刻胶层开口的侧壁形成聚合物层,进一步减小接触通孔的关键尺寸,能够克服光刻工艺局限性,适用于更小的技术节点,提高器件集成度。
Description
技术领域
本发明属于半导体技术制造领域,涉及一种接触通孔及制作方法。
背景技术
半导体制造在进入深亚微米结构之后,由于等离子体干法蚀刻各向异性的特点,开始广泛应用在半导体制造中,其原理是在反应腔室中加入反应气体,通过射频产生等离子体(plasma),一方面plasma产生的带电粒子在电场作用下朝晶圆表面加速运动,物理轰击去除未被保护的晶圆表面材料,另一方面plasma产生的化学元素与晶圆表面发生化学反应达到蚀刻的目的。
接触孔工艺是为器件引出连线的第一道工艺,接触孔的阻值会直接影响器件的反应速率,影响器件性能。因此接触孔工艺中影响阻值的参数,如接触孔的关键尺寸(CD)的大小,对器件的性能有很多的影响。传统的蚀刻工艺一般采用光刻胶作为蚀刻阻挡层,通过调节光刻胶开口的大小,得到满足工艺需求的蚀刻形貌,但当工艺节点进入到90nm、65nm乃至更小技术节点工艺,需要蚀刻工艺同样能够调节CD的大小,一方面增加接触孔图案的工艺窗口,另一方面也能够通过蚀刻工艺去覆盖掩模版设计上的局限。
因此,如何提供一种接触通孔及制作方法,用以解决光刻工艺的局限、减小接触通孔的关键尺寸,成为本领域技术人员亟待解决的技术问题。
发明内容
鉴于以上所述现有技术的缺点,本发明的目的在于提供一种接触通孔及制作方法,用于解决现有技术中光刻工艺局限导致的接触通孔的关键尺寸无法调节等问题。
为实现上述目的及其他相关目的,本发明提供一种接触通孔的制作方法,包括以下步骤:
提供一衬底,于所述衬底上形成自下而上层叠的层间介质层、底部抗反射层和光刻胶层,并图形化所述光刻胶层以形成光刻胶层开口;
基于图形化的所述光刻胶层刻蚀所述底部抗反射层,其中,刻蚀所述底部抗反射层通入的气体包括C4F8,以形成漏斗状的底部抗反射层开口;
基于图形化的所述光刻胶层刻蚀所述层间介质层以形成接触通孔。
可选地,所述底部抗反射层开口的侧壁与水平面之间的夹角范围不超过70°。
可选地,刻蚀所述层间介质层的过程中还通入辅助气体以在所述光刻胶层开口的侧壁形成聚合物层。
可选地,所述层间介质层包括氧化硅层,刻蚀所述层间介质层通入的刻蚀气体包括C4F6,所述辅助气体包括H2。
可选地,所述辅助气体还包括O2。
可选地,刻蚀所述层间介质层时,所述C4F6的流量范围为8-10 sccm,所述O2的流量范围为7-9 sccm,所述H2的流量范围为1-3 sccm。
可选地,所述底部抗反射层包括氧化硅层,刻蚀所述底部抗反射层通入的气体还包括O2。
可选地,刻蚀所述底部抗反射层时,所述C4F8的流量范围为7-9 sccm,所述O2的流量范围为6-8 sccm。
可选地,形成所述层间介质层之前,还包括于所述衬底上形成多晶硅层的步骤,所述层间介质层覆盖所述多晶硅层。
本发明还提供一种接触通孔,所述接触通孔由上述任意一项所述的制作方法制作而成。
如上所述,本发明的接触通孔及制作方法中,采用C4F8刻蚀底部抗反射层形成漏斗状底部抗反射层开口,减小接触通孔的关键尺寸。另外,刻蚀层间介质层时加入辅助气体,在光刻胶层开口的侧壁形成聚合物层,进一步减小接触通孔的关键尺寸,能够克服光刻工艺局限性,得到满足工艺需求的接触通孔,适用于更小的技术节点,提高器件集成度。
附图说明
图1显示为一种接触通孔的制作方法中于衬底上形成层间介质层、底部抗反射层与光刻胶层,并图形化光刻胶层的示意图。
图2显示为一种接触通孔的制作方法中刻蚀底部抗反射层的示意图。
图3显示为一种接触通孔的制作方法中刻蚀底部抗反射层后的电镜图片。
图4显示为一种接触通孔的制作方法中刻蚀层间介质层的示意图。
图5显示为一种接触通孔的制作方法中形成的接触通孔的电镜图片。
图6显示为本发明的接触通孔的制作方法的工艺流程图。
图7显示为本发明的接触通孔的制作方法中于衬底上形成层间介质层、底部抗反射层与光刻胶层,并图形化光刻胶层的示意图。
图8显示为本发明的接触通孔的制作方法中刻蚀底部抗反射层的示意图。
图9显示为本发明的接触通孔的制作方法中刻蚀底部抗反射层后的电镜图片。
图10显示为本发明的接触通孔的制作方法中刻蚀层间介质层的示意图。
图11显示为刻蚀气体氟/碳比与刻蚀关系的示意图。
图12显示为本发明的接触通孔的制作方法中刻蚀层间介质层后的电镜图片。
图13显示为本发明的接触通孔的制作方法中形成的接触通孔的电镜图片。
元件标号说明:1-衬底;2-层间介质层;3-底部抗反射层;4-光刻胶层;5-多晶硅层;6-底部抗反射层开口;7-钝化层;8-接触通孔;9-聚合物层;S1~S3-步骤。
具体实施方式
以下通过特定的具体实例说明本发明的实施方式,本领域技术人员可由本说明书所揭露的内容轻易地了解本发明的其他优点与功效。本发明还可以通过另外不同的具体实施方式加以实施或应用,本说明书中的各项细节也可以基于不同观点与应用,在没有背离本发明的精神下进行各种修饰或改变。
请参阅图1至图13。需要说明的是,本实施例中所提供的图示仅以示意方式说明本发明的基本构想,遂图式中仅显示与本发明中有关的组件而非按照实际实施时的组件数目、形状及尺寸绘制,其实际实施时各组件的型态、数量及比例可为一种随意的改变,且其组件布局型态也可能更为复杂。
如图1所示,显示为一种接触通孔的制作方法中于衬底1上形成层间介质层2、底部抗反射层3与光刻胶层4,并图形化光刻胶层4的示意图;图2显示为刻蚀底部抗反射层3的示意图,其中,底部抗反射层开口6呈垂直状的相貌,图3显示为刻蚀底部抗反射层3后的电镜图片;图4显示为刻蚀层间介质层2的示意图,图5显示为刻蚀层间介质层后的形成的接触通孔的电镜图片,接触通孔8的CD受光刻工艺局限不可调节,随着器件集成度的提高、工艺节点的减小,改善光刻工艺局限导致的接触通孔的关键尺寸无法调节,减小接触通孔的关键尺寸实属必要。
本实施例提供一种接触通孔的制作方法,请参阅图6,显示为该方法的工艺流程图,包括以下步骤:
S1:提供一衬底,于所述衬底上形成自下而上层叠的层间介质层、底部抗反射层和光刻胶层,并图形化所述光刻胶层以形成光刻胶层开口;
S2:基于图形化的所述光刻胶层刻蚀所述底部抗反射层,其中,刻蚀所述底部抗反射层通入的气体包括C4F8,以形成漏斗状的底部抗反射层开口;
S3:基于图形化的所述光刻胶层刻蚀所述层间介质层以形成接触通孔。
首先,请参阅图7,执行步骤S1:提供一衬底1,于所述衬底1上形成自下而上层叠的层间介质层2、底部抗反射层3和光刻胶层4,并图形化所述光刻胶层4以形成光刻胶层开口。
作为示例,所述衬底1不做具体显示,可以是硅衬底、锗衬底、锗化硅衬底或其它合适的半导体材料构成的衬底。具体地,本实施例中,所述衬底1采用硅衬底。
作为示例,所述层间介质层(Inter Level Dielectric,ILD)2包括氧化硅层,采用物理气相沉积法、化学气相沉积法、蒸镀法或其它合适的方法形成所述层间介质层2。
作为示例,形成所述层间介质层2之前,于所述衬底1上形成多晶硅层(Poly)5,所述层间介质层2覆盖所述多晶硅层5。
作为示例,采用物理气相沉积法、化学气相沉积法、蒸镀法或其它合适的方法于所述层间介质层2上形成所述底部抗反射层3,所述底部抗反射层3包括氧化硅层。
作为示例,采用旋涂法或其它合适的方法于所述底部抗反射层3上形成所述光刻胶层4,采用曝光、显影等工艺图形化所述光刻胶层4。
接着,请参阅图8,执行步骤S2:基于图形化的所述光刻胶层4刻蚀所述底部抗反射层3,其中,刻蚀所述底部抗反射层3通入的气体包括C4F8,以形成漏斗状的底部抗反射层开口6。
作为示例,刻蚀所述底部抗反射层3通入的气体还包括O2,其中,于刻蚀腔体中通入的所述C4F8的流量范围为7-9 sccm,通入的所述O2的流量范围为6-8 sccm。具体地,本实施例中,通入的所述C4F8的流量为8 sccm,通入的所述O2的流量范围为7 sccm。其中,O2在等离子氛围中与C离子反应生成CO和CO2等消耗C离子,提高F/C比例,利于对所述底部抗反射层3的刻蚀;并且,C4F8在等离子氛围内产生CF2活性自由基,所述CF2活性自由基沉积在所述底部抗反射层开口6的开口侧壁,形成钝化层7,进而形成漏斗状的所述底部抗反射层开口6。
作为示例,所述底部抗反射层开口6的侧壁与水平面之间夹角范围不超过70°,例如,底部抗反射层开口6的侧壁与水平面之间夹角为60°-70°。
作为示例,请参阅图9,显示为本发明的接触通孔的制作方法中刻蚀底部抗反射层后的电镜图片,底部抗反射层开口呈漏斗状,相较于光刻胶层开口尺寸减小,从而达到减小接触通孔特征尺寸的目的。
接着,请参阅图10,执行步骤S3:基于图形化的所述光刻胶层4刻蚀所述层间介质层2以形成接触通孔8。
作为示例,刻蚀所述层间介质层2的过程中通入的气体包括刻蚀气体与辅助气体,所述刻蚀气体包括碳氟气体,所述辅助气体包括H2。具体地,所述刻蚀气体包括C4F6,所述辅助气体还包括O2,如图11所示,显示为刻蚀气体F/C比与刻蚀关系的示意图,O2在等离子氛围中与C离子反应生成CO和CO2等消耗C离子,提高F/C比,利于对所述层间介质层2的刻蚀形成所述接触通孔8,所述接触通孔8显露所述衬底1和/或所述多晶硅层5的上表面;H2在等离子氛围中与F离子反应生成HF,减小F/C比,于光刻胶开口的侧壁形成聚合物层9,从而达到进一步减小CD的目的。
作为示例,所述聚合物层9还形成于所述底部抗反射层开口6的侧壁。
作为示例,刻蚀所述层间介质层2时,所述C4F6的流量范围为8-10 sccm,所述O2的流量范围为7-9 sccm,所述H2的流量范围为1-3 sccm;具体地,本实施例中,通入的所述C4F6的流量为9 sccm,所述O2的流量为8 sccm,所述H2的流量为2 sccm。如图12所示,显示为本发明的接触通孔的制作方法中刻蚀层间介质层的电镜图片,于光刻胶层开口的侧壁形成聚合物层9,进一步减小接触通孔的关键尺寸;如图13所示,显示为本发明的接触通孔的制作方法中形成的接触通孔的电镜图片,其中,接触通孔的顶部CD为129 nm,底部CD为93 nm,相较于图5中的接触通孔,顶部CD为157 nm,底部CD为108 nm,本发明的接触通孔的制作方法中通过形成漏斗状的底部抗反射层开口能够减小接触通孔的关键尺寸,并且在层间介质层的刻蚀中于光刻胶层开口的侧壁形成聚合物层,达到进一步减小接触通孔关键尺寸的目的。
至此,制作得到一种接触通孔,如图10所示,所述接触通孔8的尺寸小于光刻胶开口,能够克服光刻工艺局限性,减小接触通孔的特征尺寸,满足更小的技术节点,提高器件集成度。
综上所述,本发明的接触通孔及制作方法中,采用C4F8刻蚀底部抗反射层形成漏斗状底部抗反射层开口,减小接触通孔的关键尺寸。另外,刻蚀层间介质层时加入辅助气体,在光刻胶层开口的侧壁形成聚合物层,进一步减小接触通孔的关键尺寸,能够克服光刻工艺局限性,得到满足工艺需求的接触通孔,适用于更小的技术节点,提高器件集成度。所以,本发明有效克服了现有技术中的种种缺点而具高度产业利用价值。
上述实施例仅例示性说明本发明的原理及其功效,而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下,对上述实施例进行修饰或改变。因此,举凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变,仍应由本发明的权利要求所涵盖。
Claims (10)
1.一种接触通孔的制作方法,其特征在于,包括以下步骤:
提供一衬底,于所述衬底上形成自下而上层叠的层间介质层、底部抗反射层和光刻胶层,并图形化所述光刻胶层以形成光刻胶层开口;
基于图形化的所述光刻胶层刻蚀所述底部抗反射层,其中,刻蚀所述底部抗反射层通入的气体包括C4F8,以形成漏斗状的底部抗反射层开口;
基于图形化的所述光刻胶层刻蚀所述层间介质层以形成接触通孔。
2.根据权利要求1所述的接触通孔的制作方法,其特征在于:所述底部抗反射层开口的侧壁与水平面之间夹角范围不超过70°。
3.根据权利要求1所述的接触通孔的制作方法,其特征在于:刻蚀所述层间介质层的过程中还通入辅助气体以在所述光刻胶层开口的侧壁形成聚合物层。
4.根据权利要求3所述的接触通孔的制作方法,其特征在于:所述层间介质层包括氧化硅层,刻蚀所述层间介质层通入的刻蚀气体包括C4F6,所述辅助气体包括H2。
5.根据权利要求4所述的接触通孔的制作方法,其特征在于:所述辅助气体还包括O2。
6.根据权利要求5所述的接触通孔的制作方法,其特征在于:刻蚀所述层间介质层时,所述C4F6的流量范围为8-10 sccm,所述O2的流量范围为7-9 sccm,所述H2的流量范围为1-3sccm。
7.根据权利要求1所述的接触通孔的制作方法,其特征在于:所述底部抗反射层包括氧化硅层,刻蚀所述底部抗反射层通入的气体还包括O2。
8.根据权利要求7所述的接触通孔的制作方法,其特征在于:刻蚀所述底部抗反射层时,所述C4F8的流量范围为7-9 sccm,所述O2的流量范围为6-8 sccm。
9.根据权利要求1所述的接触通孔的制作方法,其特征在于:形成所述层间介质层之前,还包括于所述衬底上形成多晶硅层的步骤,所述层间介质层覆盖所述多晶硅层。
10.一种接触通孔,其特征在于:所述接触通孔由权利要求1-9中任意一项所述的制作方法制作而成。
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