CN116190222A - 等离子体刻蚀方法 - Google Patents

等离子体刻蚀方法 Download PDF

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Publication number
CN116190222A
CN116190222A CN202211150597.9A CN202211150597A CN116190222A CN 116190222 A CN116190222 A CN 116190222A CN 202211150597 A CN202211150597 A CN 202211150597A CN 116190222 A CN116190222 A CN 116190222A
Authority
CN
China
Prior art keywords
etching
chamber
plasma
flow rate
etching method
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202211150597.9A
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English (en)
Chinese (zh)
Inventor
A·H·伍德
K·里德尔
H·阿什拉夫
J·霍普金斯
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SPTS Technologies Ltd
Original Assignee
SPTS Technologies Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by SPTS Technologies Ltd filed Critical SPTS Technologies Ltd
Publication of CN116190222A publication Critical patent/CN116190222A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H01J37/32449—Gas control, e.g. control of the gas flow
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/246—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32816—Pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/01—Manufacture or treatment
    • H10N30/08—Shaping or machining of piezoelectric or electrostrictive bodies
    • H10N30/082—Shaping or machining of piezoelectric or electrostrictive bodies by etching, e.g. lithography
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H10P50/285—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means of materials not containing Si, e.g. PZT or Al2O3
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/18—Vacuum control means
    • H01J2237/182—Obtaining or maintaining desired pressure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CN202211150597.9A 2021-11-29 2022-09-21 等离子体刻蚀方法 Pending CN116190222A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
GBGB2117193.9A GB202117193D0 (en) 2021-11-29 2021-11-29 A method of plasma etching
GB2117193.9 2021-11-29

Publications (1)

Publication Number Publication Date
CN116190222A true CN116190222A (zh) 2023-05-30

Family

ID=80038579

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202211150597.9A Pending CN116190222A (zh) 2021-11-29 2022-09-21 等离子体刻蚀方法

Country Status (7)

Country Link
US (1) US20230170188A1 (https=)
EP (1) EP4192220A1 (https=)
JP (1) JP2023080017A (https=)
KR (1) KR20230080304A (https=)
CN (1) CN116190222A (https=)
GB (1) GB202117193D0 (https=)
TW (1) TW202321505A (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117276076A (zh) * 2023-11-09 2023-12-22 北京北方华创微电子装备有限公司 含Sc层的刻蚀方法、半导体器件及其制造方法及工艺设备

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4199687B1 (en) * 2021-12-17 2024-04-10 SPTS Technologies Limited Plasma etching of additive-containing aln
GB202219567D0 (en) * 2022-12-22 2023-02-08 Spts Technologies Ltd Method of plasma etching

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2003021002A1 (en) * 2001-08-29 2003-03-13 Tokyo Electron Limited Apparatus and method for plasma processing
JP4401641B2 (ja) * 2001-11-07 2010-01-20 株式会社半導体エネルギー研究所 半導体装置の作製方法
JP2008010611A (ja) * 2006-06-29 2008-01-17 Sony Corp 半導体装置の製造方法および半導体装置
KR20090086238A (ko) * 2006-11-10 2009-08-11 에이전시 포 사이언스, 테크놀로지 앤드 리서치 마이크로기계 구조 및 마이크로기계 구조 제조방법
JP2009055128A (ja) * 2007-08-23 2009-03-12 Nippon Dempa Kogyo Co Ltd 薄膜圧電共振器の製造方法及び薄膜圧電共振器
CN102280375B (zh) * 2010-06-08 2013-10-16 中国科学院微电子研究所 一种先栅工艺中叠层金属栅结构的制备方法
US20130119018A1 (en) * 2011-11-15 2013-05-16 Keren Jacobs Kanarik Hybrid pulsing plasma processing systems
EP3539155A4 (en) * 2016-11-10 2020-06-17 The Government of the United States of America, as represented by the Secretary of the Navy SCANDIUM-CONTAINING III-N ETCH STOP LAYERS FOR THE SELECTIVE ETCHING OF III-NITRIDES AND RELATED MATERIALS
US11173258B2 (en) * 2018-08-30 2021-11-16 Analog Devices, Inc. Using piezoelectric electrodes as active surfaces for electroplating process

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117276076A (zh) * 2023-11-09 2023-12-22 北京北方华创微电子装备有限公司 含Sc层的刻蚀方法、半导体器件及其制造方法及工艺设备

Also Published As

Publication number Publication date
GB202117193D0 (en) 2022-01-12
TW202321505A (zh) 2023-06-01
US20230170188A1 (en) 2023-06-01
KR20230080304A (ko) 2023-06-07
EP4192220A1 (en) 2023-06-07
JP2023080017A (ja) 2023-06-08

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