CN116159403A - Semiconductor waste gas treatment device and semiconductor waste gas treatment system - Google Patents
Semiconductor waste gas treatment device and semiconductor waste gas treatment system Download PDFInfo
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- CN116159403A CN116159403A CN202211574941.7A CN202211574941A CN116159403A CN 116159403 A CN116159403 A CN 116159403A CN 202211574941 A CN202211574941 A CN 202211574941A CN 116159403 A CN116159403 A CN 116159403A
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- 238000011282 treatment Methods 0.000 title claims abstract description 46
- 239000004065 semiconductor Substances 0.000 title claims abstract description 45
- 239000002912 waste gas Substances 0.000 title abstract description 35
- 238000003860 storage Methods 0.000 claims abstract description 50
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 23
- 239000002826 coolant Substances 0.000 claims description 14
- 239000007788 liquid Substances 0.000 claims description 13
- 238000001816 cooling Methods 0.000 claims description 8
- 239000000110 cooling liquid Substances 0.000 abstract description 54
- 238000005260 corrosion Methods 0.000 abstract description 22
- 230000007797 corrosion Effects 0.000 abstract description 22
- 239000007789 gas Substances 0.000 abstract description 15
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 abstract description 3
- 238000003466 welding Methods 0.000 abstract description 3
- 238000000034 method Methods 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 206010070834 Sensitisation Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 230000002378 acidificating effect Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011328 necessary treatment Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 230000008313 sensitization Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 such as HF Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/005—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by heat treatment
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- B—PERFORMING OPERATIONS; TRANSPORTING
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- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/77—Liquid phase processes
- B01D53/78—Liquid phase processes with gas-liquid contact
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D17/00—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces
- F25D17/02—Arrangements for circulating cooling fluids; Arrangements for circulating gas, e.g. air, within refrigerated spaces for circulating liquids, e.g. brine
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F25—REFRIGERATION OR COOLING; COMBINED HEATING AND REFRIGERATION SYSTEMS; HEAT PUMP SYSTEMS; MANUFACTURE OR STORAGE OF ICE; LIQUEFACTION SOLIDIFICATION OF GASES
- F25D—REFRIGERATORS; COLD ROOMS; ICE-BOXES; COOLING OR FREEZING APPARATUS NOT OTHERWISE PROVIDED FOR
- F25D29/00—Arrangement or mounting of control or safety devices
- F25D29/005—Mounting of control devices
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Abstract
本发明涉及半导体制造技术领域,提供一种半导体废气处理装置及半导体废气处理系统,半导体废气处理装置包括反应腔、套环和冷却器,所述冷却器设有用于冷却液流通的通道,所述通道围绕所述反应腔的外部设置,所述套环上设有溢流孔,所述套环套设于所述反应腔的底部,与所述反应腔之间形成有存储所述冷却液的储存室。通过反应腔底部的储存室储存冷却液,保证反应腔底部的焊缝不直接与废气接触,减少反应腔底部的腐蚀。同时冷却液一直在通道内循环流动,保证冷却液不会长期堆积导致其酸性强度高,降低了反应腔内的温度,减缓腐蚀速率,提高了反应腔的使用寿命。
The invention relates to the field of semiconductor manufacturing technology, and provides a semiconductor waste gas treatment device and a semiconductor waste gas treatment system. The semiconductor waste gas treatment device includes a reaction chamber, a collar and a cooler, and the cooler is provided with a channel for cooling liquid circulation. The channel is arranged around the outside of the reaction chamber, the collar is provided with an overflow hole, the collar is sleeved on the bottom of the reaction chamber, and a hole for storing the cooling liquid is formed between the collar and the reaction chamber. Storage Room. The cooling liquid is stored in the storage chamber at the bottom of the reaction chamber to ensure that the welding seam at the bottom of the reaction chamber does not directly contact the exhaust gas and reduce the corrosion of the bottom of the reaction chamber. At the same time, the cooling liquid has been circulating in the channel to ensure that the cooling liquid will not accumulate for a long time, resulting in high acidity, which reduces the temperature in the reaction chamber, slows down the corrosion rate, and improves the service life of the reaction chamber.
Description
技术领域technical field
本发明涉及半导体制造技术领域,尤其涉及一种半导体废气处理装置及半导体废气处理系统。The invention relates to the technical field of semiconductor manufacturing, in particular to a semiconductor waste gas treatment device and a semiconductor waste gas treatment system.
背景技术Background technique
集成电路在生产与制造时,利用各种特气实现工艺需求,例如:CF气体,cl2NF3等有害气体,该气体主要是剧毒,酸性强。该类气体不能直接排放。所以需要吸附式尾气处理设备进行处理后排放。吸附式尾气处理设备的基本原理为利用高温将气体化学键打开,然后与氧结合,形成氧化物后与水融合。In the production and manufacture of integrated circuits, various special gases are used to meet the process requirements, such as: CF gas, cl2NF3 and other harmful gases, which are mainly highly toxic and acidic. Such gases cannot be discharged directly. Therefore, adsorption tail gas treatment equipment is required for treatment and discharge. The basic principle of adsorption tail gas treatment equipment is to use high temperature to open the chemical bonds of gas, and then combine with oxygen to form oxides and then fuse with water.
因为半导体使用的制程气体大部分是腐蚀性较强气体,腐蚀性强,例如HF,HBr,HCl,与水结合后腐蚀性强度加倍,对反应腔的使用寿命有较大影响,甚至可能导致反应腔腐蚀严重,尤其是反应腔底部外壁的周向位置存在焊缝,容易发生敏化效应,且发生腐蚀的位置温度较高,导致腐蚀速度加快,进一步降低反应腔的抗腐蚀性能,影响反应腔的正常使用。Because most of the process gases used in semiconductors are highly corrosive gases, such as HF, HBr, and HCl, which double the corrosive strength when combined with water, which has a great impact on the service life of the reaction chamber, and may even cause reaction The cavity is severely corroded, especially the weld seam on the outer wall of the bottom of the reaction cavity, which is prone to sensitization effect, and the temperature of the corrosion position is high, which leads to an accelerated corrosion rate, further reduces the corrosion resistance of the reaction cavity, and affects the reaction cavity. normal use.
发明内容Contents of the invention
本发明旨在至少解决相关技术中存在的技术问题之一。为此,本发明提出一种半导体废气处理装置,通过。The present invention aims to solve at least one of the technical problems existing in the related art. For this reason, the present invention proposes a semiconductor waste gas treatment device, through.
本发明还提出一种半导体废气处理系统,包括上述的半导体废气处理装置。The present invention also proposes a semiconductor waste gas treatment system, comprising the above-mentioned semiconductor waste gas treatment device.
根据本发明第一方面实施例的半导体废气处理装置,包括反应腔、套环和冷却器,所述冷却器设有用于冷却液流通的通道,所述通道围绕所述反应腔的外部设置,所述套环上设有溢流孔,所述套环套设于所述反应腔的底部,与所述反应腔之间形成有存储所述冷却液的储存室。The semiconductor waste gas treatment device according to the embodiment of the first aspect of the present invention includes a reaction chamber, a collar and a cooler, the cooler is provided with a channel for cooling liquid circulation, and the channel is arranged around the outside of the reaction chamber, so An overflow hole is provided on the collar, the collar is set on the bottom of the reaction chamber, and a storage chamber for storing the cooling liquid is formed between the collar and the reaction chamber.
根据本发明实施例的半导体废气处理装置,所述通道沿所述反应腔的轴向延伸。According to the semiconductor waste gas treatment device of the embodiment of the present invention, the channel extends along the axial direction of the reaction chamber.
根据本发明实施例的半导体废气处理装置,所述冷却器包括储水箱,所述储水箱与所述通道联通。According to the semiconductor waste gas treatment device of the embodiment of the present invention, the cooler includes a water storage tank, and the water storage tank communicates with the channel.
根据本发明实施例的半导体废气处理装置,所述冷却器还包括循环泵和循环支路,所述循环泵通过所述循环支路与所述储水箱和所述通道联通。According to the semiconductor waste gas treatment device of the embodiment of the present invention, the cooler further includes a circulation pump and a circulation branch, and the circulation pump communicates with the water storage tank and the channel through the circulation branch.
根据本发明实施例的半导体废气处理装置,所述套环底部设置有出液孔,通过所述出液孔与所述储水箱联通。According to the semiconductor waste gas treatment device of the embodiment of the present invention, a liquid outlet hole is provided at the bottom of the collar, and communicates with the water storage tank through the liquid outlet hole.
根据本发明实施例的半导体废气处理装置,所述循环支路上设置有压力计。According to the semiconductor waste gas treatment device of the embodiment of the present invention, a pressure gauge is arranged on the circulation branch.
根据本发明实施例的半导体废气处理装置,所述冷却器还包括控制模块,所述控制模块与所述循环泵连接,控制所述循环泵的工作。According to the semiconductor waste gas treatment device of the embodiment of the present invention, the cooler further includes a control module connected to the circulation pump to control the operation of the circulation pump.
根据本发明实施例的半导体废气处理装置,所述反应腔外部设置有限流孔,所述限流孔与所述通道联通设置。According to the semiconductor waste gas treatment device of the embodiment of the present invention, a flow-limiting hole is provided outside the reaction chamber, and the flow-limiting hole is communicated with the channel.
根据本发明实施例的半导体废气处理装置,所述套环与所述储水箱之间设置有冷却装置。According to the semiconductor waste gas treatment device of the embodiment of the present invention, a cooling device is provided between the collar and the water storage tank.
进一步地,本发明的实施例,还提供一种半导体废气处理系统,包括上述所述的半导体废气处理装置。Furthermore, an embodiment of the present invention also provides a semiconductor waste gas treatment system, including the above-mentioned semiconductor waste gas treatment device.
本发明实施例中的上述一个或多个技术方案,至少具有如下技术效果之一:The above one or more technical solutions in the embodiments of the present invention have at least one of the following technical effects:
本发明的实施例,提供一种半导体废气处理装置,包括反应腔、套环和冷却器,所述冷却器设有用于冷却液流通的通道,所述通道围绕所述反应腔的外部设置,所述套环上设有溢流孔,所述套环套设于所述反应腔的底部,与所述反应腔之间形成有存储所述冷却液的储存室。通过反应腔底部的储存室储存冷却液,保证反应腔底部的焊缝不直接与废气接触,减少反应腔底部的腐蚀。同时冷却液一直在通道内循环流动,保证冷却液不会长期堆积,降低反应腔内的温度,减缓腐蚀速率,提高了反应腔的使用寿命。An embodiment of the present invention provides a semiconductor waste gas treatment device, including a reaction chamber, a collar and a cooler, the cooler is provided with a channel for cooling liquid circulation, and the channel is arranged around the outside of the reaction chamber, so An overflow hole is provided on the collar, the collar is set on the bottom of the reaction chamber, and a storage chamber for storing the cooling liquid is formed between the collar and the reaction chamber. The cooling liquid is stored in the storage chamber at the bottom of the reaction chamber to ensure that the welding seam at the bottom of the reaction chamber does not directly contact the exhaust gas and reduce the corrosion of the bottom of the reaction chamber. At the same time, the cooling liquid has been circulating in the channel to ensure that the cooling liquid will not accumulate for a long time, reduce the temperature in the reaction chamber, slow down the corrosion rate, and improve the service life of the reaction chamber.
本发明的附加方面和优点将在下面的描述中部分给出,部分将从下面的描述中变得明显,或通过本发明的实践了解到。Additional aspects and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
附图说明Description of drawings
为了更清楚地说明本发明实施例或相关技术中的技术方案,下面将对实施例或相关技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or related technologies, the following will briefly introduce the drawings that need to be used in the descriptions of the embodiments or related technologies. Obviously, the drawings in the following description are only For some embodiments of the invention, those skilled in the art can also obtain other drawings based on these drawings without creative effort.
图1是本发明实施例提供的半导体废气处理装置的结构示意图一;Figure 1 is a schematic structural diagram of a semiconductor waste gas treatment device provided by an embodiment of the present invention;
图2是本发明实施例提供的冷却液的流动示意图。Fig. 2 is a schematic flow diagram of the cooling liquid provided by the embodiment of the present invention.
附图标记:Reference signs:
1、反应腔;11、限流孔;1. Reaction chamber; 11. Restriction hole;
2、套环;21、溢流孔;22、储存室;23、出液孔;2. Collar; 21. Overflow hole; 22. Storage chamber; 23. Liquid outlet hole;
3、冷却器;31、通道;32、储水箱;33、循环泵;34、循环支路;35、压力计;36、控制模块;3. Cooler; 31. Channel; 32. Water storage tank; 33. Circulation pump; 34. Circulation branch; 35. Pressure gauge; 36. Control module;
4、冷却装置。4. Cooling device.
具体实施方式Detailed ways
下面结合附图和实施例对本发明的实施方式作进一步详细描述。以下实施例用于说明本发明,但不能用来限制本发明的范围。Embodiments of the present invention will be further described in detail below in conjunction with the accompanying drawings and examples. The following examples are used to illustrate the present invention, but should not be used to limit the scope of the present invention.
在本发明实施例的描述中,需要说明的是,术语“中心”、“纵向”、“横向”、“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明实施例和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明实施例的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性。In the description of the embodiments of the present invention, it should be noted that the orientation or positional relationship indicated by the terms "center", "longitudinal", "transverse", "upper", "lower", "inner" and "outer" are Based on the orientation or positional relationship shown in the drawings, it is only for the convenience of describing the embodiments of the present invention and simplifying the description, and does not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, therefore It should not be understood as a limitation to the embodiments of the present invention. In addition, the terms "first" and "second" are used for descriptive purposes only, and should not be understood as indicating or implying relative importance.
在本发明实施例的描述中,需要说明的是,除非另有明确的规定和限定,术语“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体连接;可以是机械连接,也可以是电连接;可以是直接相连,也可以通过中间媒介间接相连。对于本领域的普通技术人员而言,可以具体情况理解上述术语在本发明实施例中的具体含义。In the description of the embodiments of the present invention, it should be noted that unless otherwise specified and limited, the terms "connected" and "connected" should be understood in a broad sense, for example, it can be a fixed connection or a detachable connection, Or integrated connection; it can be mechanical connection or electrical connection; it can be direct connection or indirect connection through an intermediary. Those of ordinary skill in the art can understand the specific meanings of the above terms in the embodiments of the present invention in specific situations.
在本发明实施例中,除非另有明确的规定和限定,第一特征在第二特征“上”或“下”可以是第一和第二特征直接接触,或第一和第二特征通过中间媒介间接接触。而且,第一特征在第二特征“之上”、“上方”和“上面”可以是第一特征在第二特征正上方或斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”可以是第一特征在第二特征正下方或斜下方,或仅仅表示第一特征水平高度小于第二特征。In the embodiments of the present invention, unless otherwise specified and limited, the first feature may be in direct contact with the first feature or the first feature and the second feature may pass through the middle of the second feature. Media indirect contact. Moreover, "above", "above" and "above" the first feature on the second feature may mean that the first feature is directly above or obliquely above the second feature, or simply means that the first feature is higher in level than the second feature. "Below", "beneath" and "beneath" the first feature may mean that the first feature is directly below or obliquely below the second feature, or simply means that the first feature is less horizontally than the second feature.
此外,在本发明实施例的描述中,除非另有说明,“多个”、“多根”、“多组”的含义是两个或两个以上,“若干个”、“若干根”、“若干组”的含义是一个或一个以上。In addition, in the description of the embodiments of the present invention, unless otherwise specified, the meanings of "multiple", "multiple roots" and "multiple groups" are two or more, "several", "several roots", "Several groups" means one or more than one.
在本说明书的描述中,参考术语“一个实施例”、“一些实施例”、“示例”、“具体示例”、或“一些示例”等的描述意指结合该实施例或示例描述的具体特征、结构、材料或者特点包含于本发明实施例的至少一个实施例或示例中。在本说明书中,对上述术语的示意性表述不必须针对的是相同的实施例或示例。而且,描述的具体特征、结构、材料或者特点可以在任一个或多个实施例或示例中以合适的方式结合。此外,在不相互矛盾的情况下,本领域的技术人员可以将本说明书中描述的不同实施例或示例以及不同实施例或示例的特征进行结合和组合。In the description of this specification, descriptions referring to the terms "one embodiment", "some embodiments", "example", "specific examples", or "some examples" mean that specific features described in connection with the embodiment or example , structure, material or feature is included in at least one embodiment or example of the embodiments of the present invention. In this specification, the schematic representations of the above terms are not necessarily directed to the same embodiment or example. Furthermore, the described specific features, structures, materials or characteristics may be combined in any suitable manner in any one or more embodiments or examples. In addition, those skilled in the art can combine and combine different embodiments or examples and features of different embodiments or examples described in this specification without conflicting with each other.
本发明的一个方面的实施例,结合图1所示,提供一种半导体废气处理装置,包括反应腔1、套环2和冷却器3,所述冷却器3设有用于冷却液流通的通道31,所述通道31围绕所述反应腔1的外部设置,所述套环2上设有溢流孔21,所述套环2套设于所述反应腔1的底部,与所述反应腔1之间形成有存储所述冷却液的储存室22。通过反应腔1底部的储存室22储存冷却液,保证反应腔1底部的焊缝不直接与废气接触,减少反应腔1底部的腐蚀。同时冷却液一直在通道31内循环流动,保证冷却液不会长期堆积,降低反应腔1内的温度,减缓腐蚀速率,提高了反应腔1的使用寿命。An embodiment of one aspect of the present invention, as shown in FIG. 1 , provides a semiconductor waste gas treatment device, including a
本发明实施例的半导体废气处理装置,如图1所示,包括用于废气反应处理的反应腔1,反应腔1为自上而下的贯通结构,套环2套设在反应腔1的底部,对应于反应腔1的部分,冷却器3构造出围绕反应腔1设置的通道31,通道31内流通有冷却液,同时在套环2上设置有溢流孔21,溢流孔21连通通道31、储存室22和反应腔1,即冷却液流经通道31且在储存室22储存满后,沿着溢流口溢出至反应腔1内部,并从套环2底部流出。可选的,通道31的数量可以为一条或多条,本申请对此不做具体限定。The semiconductor waste gas treatment device of the embodiment of the present invention, as shown in Figure 1, includes a
如图2所示,本发明通过通道31的设置,将冷却器3的冷却液流经通道31后在储存室22储存,使得储存室22内储存满冷却液,防止废气与反应腔1底部的焊缝接触发生腐蚀,同时当储存室22储存满冷却液后多余的冷却液会从溢流孔21流出,使得储存室22内的冷却液不断循环流通,保证冷却液不会长期堆积导致其酸性增强,能够提高反应腔1的冷却效果,冷却液的循环流动降低了反应腔1底部的温度,能够减慢腐蚀效率。本发明的半导体废气处理装置能够利用冷却液防止废气与反应腔1底部的焊缝接触,延缓腐蚀,有效降低反应腔1腐蚀速率的同时,还能降低反应腔1的温度,减缓废气对反应腔1的腐蚀,还可以使冷却液在反应腔1的底部分布均匀且储存室22内始终储存有足够的冷却液,有效隔绝废气与反应腔1底部的焊缝的接触,防止反应腔1底部的腐蚀,延长使用寿命。As shown in Figure 2, the present invention stores the cooling liquid in the
根据本发明提供的一个实施例,通道31沿反应腔1的轴向延伸,在本实施例中,通道31为直线状,其沿着反应腔1外部的轴向延伸设置,通道31具有一定的宽度,可覆盖在反应腔1外壁的表面,通道31内流经的冷却液可以对反应腔1进行一定程度的降温。According to an embodiment provided by the present invention, the
在其他实施例中,通道31的形状和走向可以根据实际使用需要进行设置,还可以为部分弯曲、全部弯曲或沿着反应腔1外部的轴向螺旋式上升设置等,本申请对此不做具体限定。In other embodiments, the shape and direction of the
根据本发明提供的一个实施例,冷却器3包括设置于反应腔1外部的储水箱32,储水箱32与通道31相联通,储水箱32可以用于给通道31内提供冷却液,冷却液在流经通道31、储存室22和反应腔1后可以回到储水箱32,进行循环利用。According to an embodiment provided by the present invention, the
根据本发明提供的一个实施例,在套环2的侧壁上设置有溢流孔21,套环2与反应腔1之间形成有储存室22,储存室22用于储存冷却液,保证反应腔1底部的焊缝不与废气接触。可以理解的是,溢流孔21的高度决定了储存室22的容积,溢流孔21的高度可以根据需要隔绝的反应腔1部位的需要进行设置,溢流孔21的高度越高,储存室22的体积越大,其能够容纳的冷却液越多,隔绝的面积也越大。According to an embodiment provided by the present invention, an
根据本发明提供的一个实施例,为了实现冷却液在通道31、储存室22、反应腔1和储水箱32之间的循环流动,冷却器3还设置有循环泵33和循环支路34,循环泵33通过循环支路34与储水箱32和通道31连接,为冷却液的循环流动提供动力,最大程度的保证冷却液的流动效率,防止冷却液在储存室22长期堆积导致储存室22内的冷却液的酸性增强,反而加快了反应腔1底部焊缝的腐蚀速率,通过循环泵33加快冷却液的流动,还能提高反应腔1的冷却效率,降低反应腔1的腐蚀效率。According to an embodiment provided by the present invention, in order to realize the circulating flow of the cooling liquid between the
根据本发明提供的一个实施例,在套环2的底部设置有出液孔23,出液孔23的大小和数量可以根据排出冷却液的实际需要进行调整,在储存室22内储存了足够的冷却液后,高于溢流孔21部分的冷却液会从溢流孔21溢出,到达反应腔1内部,并通过反应腔1底部的套环2上设置的出液孔23流出,还可以将流出的冷却液汇聚到储水箱32内,在储水箱32内经过必要的处理后进行下一个循环。According to an embodiment provided by the present invention, a
根据本发明的一个实施例,在循环支路34上设置有压力计35,压力计35可以监测循环支路34内部的冷却液的压强,压力计35还能用于判断冷却器3是否发生异常损坏,当压力计35的测量值发生异常变化时,需要及时安排检修,例如在冷却器3工作过程中,突然发现压力计35的测量值显著降低时,可能是某处管路发生损坏、泄露或堵塞等情况,此时可以安排对循环支路34或通道31等管路进行检修,保证冷却器3的正常工作。According to one embodiment of the present invention, a
在其他实施例中,还包括需要使用冷却液的其他支路,循环支路34与其他支路连通,用于给其他支路提供冷却液,方便控制。可选的,还可以根据需要在循环支路34上设置单向阀,以控制冷却液在循环支路34内的流向,本申请对此不做具体限定。In other embodiments, other branches that need to use cooling liquid are also included, and the
根据本发明的一个实施例,冷却器3还设置有控制模块36,控制模块36可以根据压力计35的测量值控制循环泵33的工作,例如根据压力计35的测量值控制循环泵33的功率,从而达到控制冷却液的流动速率的目的。According to an embodiment of the present invention, the
在其他实施例中,循环支路34上或储存室22内等位置还可以设置温度计,温度计与控制模块连接,根据温度调控循环泵33的工作。例如,当温度计检测到循环支路34内的温度大于25℃时,控制模块控制循环泵33加大功率,加大冷却液的流动速率,进一步降低冷却液的温度,降低反应腔1的腐蚀速率。In other embodiments, a thermometer can also be installed on the
根据本发明的一个实施例,在反应腔1外部设置有限流孔11,限流孔11与通道31对应连通设置,限流孔11的数量与通道31的数量相适应,可以根据实际需要进行设置,每个通道31均具有一个限流孔11作为进液口,冷却液经过限流孔11进入通道31,流经整个通道31和储存室22后,多余的冷却液通过溢流孔21进入反应腔1内部,并从套环2底部的出液孔23流出,回到储水箱32,进行下一个循环。限流孔11作为每一个通道31的进液孔,可以进一步控制进入通道31的冷却液的压力、流量和流速。限流孔11可以是设置在反应腔1外部的孔,还可以是独立在外部的能够控制冷却液六十的限流装置,本申请对此不做具体限定。According to an embodiment of the present invention, a flow-restricting
根据本发明的一个实施例,在套环2和储水箱32之间还设置有冷却装置4,冷却装置4可以对反应腔1进行进一步的冷却,并对从套环2的出液孔23流出的冷却液进行冷却,降低循环过程中的冷却液的温度,提高冷却效果,降低腐蚀速率。According to an embodiment of the present invention, a
本发明的另一方面的实施例,还提供一种半导体废气处理系统,包括如上述实施例的半导体废气处理装置。Another embodiment of the present invention further provides a semiconductor waste gas treatment system, including the semiconductor waste gas treatment device as in the above embodiment.
本发明实施例的半导体废气处理系统,在半导体废气处理装置设置自上而下贯通的反应腔1,在反应腔1的底部套设有套环2,套环2与反应腔1之间形成储存室22,套环2上还设置有溢流孔21,冷却液流经通道31和储存室22后,多余的冷却液经溢流孔21流入反应腔1内并从反应腔1底部排出。In the semiconductor waste gas treatment system of the embodiment of the present invention, the semiconductor waste gas treatment device is provided with a
本发明的实施例,提供一种半导体废气处理装置,包括反应腔1、套环2和冷却器3,所述冷却器3设有用于冷却液流通的通道31,所述通道31围绕所述反应腔1的外部设置,所述套环2上设有溢流孔21,所述套环2套设于所述反应腔1的底部,与所述反应腔1之间形成有存储所述冷却液的储存室22。通过反应腔1底部的储存室22储存冷却液,保证反应腔1底部的焊缝不直接与废气接触,减少反应腔1底部焊缝的腐蚀。同时冷却液一直在通道31内循环流动,保证冷却液不会长期堆积,降低反应腔1内的温度,减缓腐蚀速率,提高了反应腔1的使用寿命。An embodiment of the present invention provides a semiconductor waste gas treatment device, including a
需要说明的是:上述本申请实施例先后顺序仅仅为了描述,不代表实施例的优劣。且上述对本说明书特定实施例进行了描述。其它实施例在所附权利要求书的范围内。在一些情况下,在权利要求书中记载的动作或步骤可以按照不同于实施例中的顺序来执行并且仍然可以实现期望的结果。另外,在附图中描绘的过程不一定要求示出的特定顺序或者连续顺序才能实现期望的结果。在某些实施方式中,多任务处理和并行处理也是可以的或者可能是有利的。It should be noted that: the order of the above-mentioned embodiments of the present application is only for description, and does not represent the advantages and disadvantages of the embodiments. And the above describes the specific embodiments of this specification. Other implementations are within the scope of the following claims. In some cases, the actions or steps recited in the claims can be performed in an order different from that in the embodiments and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. Multitasking and parallel processing are also possible or may be advantageous in certain embodiments.
最后应说明的是:以上实施方式仅用于说明本发明的技术方案,而非对本发明的限制。尽管参照实施例对本发明进行了详细说明,本领域的普通技术人员应当理解,其依然可以对前述各实施例所记载的技术方案进行修改,或者对其中部分技术特征进行等同替换;而这些修改或者替换,并不使相应技术方案的本质脱离本发明各实施例技术方案的精神和范围,均应包含在本申请的保护范围之内。Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, rather than to limit the present invention. Although the present invention has been described in detail with reference to the embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features; and these modifications or Replacement does not make the essence of the corresponding technical solutions deviate from the spirit and scope of the technical solutions of the embodiments of the present invention, and should be included in the protection scope of the present application.
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