CN116007831A - 一种复合式mems真空规及其制作方法 - Google Patents
一种复合式mems真空规及其制作方法 Download PDFInfo
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- CN116007831A CN116007831A CN202211662335.0A CN202211662335A CN116007831A CN 116007831 A CN116007831 A CN 116007831A CN 202211662335 A CN202211662335 A CN 202211662335A CN 116007831 A CN116007831 A CN 116007831A
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- vacuum gauge
- mems
- vacuum
- film
- silicon substrate
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 44
- 239000010703 silicon Substances 0.000 claims abstract description 44
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 43
- 239000002131 composite material Substances 0.000 claims abstract description 28
- 238000000605 extraction Methods 0.000 claims abstract description 23
- 239000006059 cover glass Substances 0.000 claims description 20
- 238000001259 photo etching Methods 0.000 claims description 12
- 239000006121 base glass Substances 0.000 claims description 10
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 9
- 238000005516 engineering process Methods 0.000 claims description 8
- 239000011521 glass Substances 0.000 claims description 8
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical group [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 4
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims 1
- 238000005259 measurement Methods 0.000 abstract description 27
- 239000003990 capacitor Substances 0.000 abstract description 2
- 239000010408 film Substances 0.000 description 60
- 239000007789 gas Substances 0.000 description 30
- 238000000034 method Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 238000012360 testing method Methods 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- 238000009530 blood pressure measurement Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000007774 longterm Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
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CN202211662335.0A CN116007831B (zh) | 2022-12-24 | 2022-12-24 | 一种复合式mems真空规及其制作方法 |
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CN202211662335.0A CN116007831B (zh) | 2022-12-24 | 2022-12-24 | 一种复合式mems真空规及其制作方法 |
Publications (2)
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CN116007831A true CN116007831A (zh) | 2023-04-25 |
CN116007831B CN116007831B (zh) | 2024-04-16 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116608988A (zh) * | 2023-06-02 | 2023-08-18 | 兰州空间技术物理研究所 | 一种多感压膜绝压mems电容薄膜真空规 |
Citations (8)
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---|---|---|---|---|
JP2008111778A (ja) * | 2006-10-31 | 2008-05-15 | Ulvac Japan Ltd | ピラニ真空計および圧力測定方法 |
JP2011174900A (ja) * | 2010-02-26 | 2011-09-08 | Canon Anelva Corp | 複合型圧力計、及び複合型圧力計の製造方法 |
US20150111332A1 (en) * | 2013-01-25 | 2015-04-23 | MCube Inc. | Method and device of mems process control monitoring and packaged mems with different cavity pressures |
US20150377732A1 (en) * | 2014-06-27 | 2015-12-31 | Tokyo Electron Limited | Pressure measuring device and pressure measuring method |
CN111982383A (zh) * | 2020-07-06 | 2020-11-24 | 厦门大学 | 一种差压接触式mems电容薄膜真空规 |
CN113984278A (zh) * | 2021-10-21 | 2022-01-28 | 苏州莱测检测科技有限公司 | 一种便携式真空计校准装置 |
CN113979405A (zh) * | 2021-12-29 | 2022-01-28 | 南京元感微电子有限公司 | Mems真空计及其制备方法 |
CN114235267A (zh) * | 2021-12-17 | 2022-03-25 | 江苏创芯海微科技有限公司 | 集成温湿度传感器的皮拉尼真空计及制备方法 |
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2022
- 2022-12-24 CN CN202211662335.0A patent/CN116007831B/zh active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008111778A (ja) * | 2006-10-31 | 2008-05-15 | Ulvac Japan Ltd | ピラニ真空計および圧力測定方法 |
JP2011174900A (ja) * | 2010-02-26 | 2011-09-08 | Canon Anelva Corp | 複合型圧力計、及び複合型圧力計の製造方法 |
US20150111332A1 (en) * | 2013-01-25 | 2015-04-23 | MCube Inc. | Method and device of mems process control monitoring and packaged mems with different cavity pressures |
US20150377732A1 (en) * | 2014-06-27 | 2015-12-31 | Tokyo Electron Limited | Pressure measuring device and pressure measuring method |
CN111982383A (zh) * | 2020-07-06 | 2020-11-24 | 厦门大学 | 一种差压接触式mems电容薄膜真空规 |
CN113984278A (zh) * | 2021-10-21 | 2022-01-28 | 苏州莱测检测科技有限公司 | 一种便携式真空计校准装置 |
CN114235267A (zh) * | 2021-12-17 | 2022-03-25 | 江苏创芯海微科技有限公司 | 集成温湿度传感器的皮拉尼真空计及制备方法 |
CN113979405A (zh) * | 2021-12-29 | 2022-01-28 | 南京元感微电子有限公司 | Mems真空计及其制备方法 |
Non-Patent Citations (6)
Title |
---|
HAN, XD: "Differential MEMS capacitance diaphragm vacuum gauge with high sensitivity and wide range", 《VACUUM》, vol. 191, pages 1 - 8 * |
MING ZHANG: "Exploiting the transient response of a Pirani gauge sensor for beyond atmospheric pressure measurement", 《2013 IEEE 11TH INTERNATIONAL NEW CIRCUITS AND SYSTEMS CONFERENCE (NEWCAS)》, 19 June 2013 (2013-06-19), pages 1 - 4, XP032447590, DOI: 10.1109/NEWCAS.2013.6573639 * |
周吉龙;陈肯乐;张锦文;金玉丰;: "微型MEMS皮拉尼计研究", 传感技术学报, no. 03, 15 March 2008 (2008-03-15), pages 145 - 148 * |
李得天: "真空全压力测量新技术", 《真空与低温》, vol. 28, no. 4, pages 375 - 391 * |
梁平;李杰;戴佳鑫;干蜀毅;: "真空计的发展概况与趋势", 真空与低温, no. 01, 15 March 2011 (2011-03-15), pages 53 - 57 * |
金玉丰: "《微米纳米技术丛书》", 国防工业出版社, pages: 196 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116608988A (zh) * | 2023-06-02 | 2023-08-18 | 兰州空间技术物理研究所 | 一种多感压膜绝压mems电容薄膜真空规 |
CN116608988B (zh) * | 2023-06-02 | 2024-02-27 | 兰州空间技术物理研究所 | 一种多感压膜绝压mems电容薄膜真空规 |
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CN116007831B (zh) | 2024-04-16 |
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Inventor after: Li Gang Inventor after: Li Detian Inventor after: Zhang Huzhong Inventor after: Guo Meiru Inventor after: Ren Zhengyi Inventor after: Ge Jinguo Inventor after: Zhao Lan Inventor after: Chen Huiying Inventor before: Li Gang Inventor before: Chen Huiying Inventor before: Li Detian Inventor before: Zhang Huzhong Inventor before: Cheng Yongjun Inventor before: Sun Wenjun Inventor before: Guo Meiru Inventor before: Ren Zhengyi Inventor before: Ge Jinguo Inventor before: Zhao Lan |
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