CN115959906A - Strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic and preparation method thereof - Google Patents
Strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic and preparation method thereof Download PDFInfo
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- 239000000919 ceramic Substances 0.000 title claims abstract description 80
- VIUKNDFMFRTONS-UHFFFAOYSA-N distrontium;niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Sr+2].[Sr+2].[Nb+5].[Nb+5] VIUKNDFMFRTONS-UHFFFAOYSA-N 0.000 title claims abstract description 25
- 238000002360 preparation method Methods 0.000 title claims abstract description 10
- 239000000203 mixture Substances 0.000 claims abstract description 7
- 239000000126 substance Substances 0.000 claims abstract description 4
- 239000000843 powder Substances 0.000 claims description 23
- 238000000498 ball milling Methods 0.000 claims description 21
- 238000005245 sintering Methods 0.000 claims description 15
- 238000002156 mixing Methods 0.000 claims description 14
- 238000000034 method Methods 0.000 claims description 13
- 230000015556 catabolic process Effects 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 10
- 238000004321 preservation Methods 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000001035 drying Methods 0.000 claims description 8
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 229920003023 plastic Polymers 0.000 claims description 8
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 8
- 239000002994 raw material Substances 0.000 claims description 8
- 238000003786 synthesis reaction Methods 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000032683 aging Effects 0.000 claims description 6
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 5
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000007650 screen-printing Methods 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 239000002033 PVDF binder Substances 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 238000010304 firing Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 2
- 239000007858 starting material Substances 0.000 claims description 2
- 238000004506 ultrasonic cleaning Methods 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 230000000630 rising effect Effects 0.000 claims 1
- 238000000227 grinding Methods 0.000 description 10
- 229910010293 ceramic material Inorganic materials 0.000 description 9
- 238000010438 heat treatment Methods 0.000 description 9
- 230000007812 deficiency Effects 0.000 description 7
- 239000000463 material Substances 0.000 description 7
- 238000000465 moulding Methods 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical group [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 229910001427 strontium ion Inorganic materials 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 238000011161 development Methods 0.000 description 3
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- 235000015895 biscuits Nutrition 0.000 description 2
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- 238000001816 cooling Methods 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 230000002194 synthesizing effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 229910003237 Na0.5Bi0.5TiO3 Inorganic materials 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 238000000748 compression moulding Methods 0.000 description 1
- 238000005242 forging Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000000462 isostatic pressing Methods 0.000 description 1
- 230000028161 membrane depolarization Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- WFPQISQTIVPXNY-UHFFFAOYSA-N niobium strontium Chemical compound [Sr][Nb] WFPQISQTIVPXNY-UHFFFAOYSA-N 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
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- 239000002002 slurry Substances 0.000 description 1
- 238000003746 solid phase reaction Methods 0.000 description 1
- 238000010532 solid phase synthesis reaction Methods 0.000 description 1
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Abstract
The invention relates to a strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic and a preparation method thereof. The chemical composition of the strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic is Sr 2‑ x Nb 2 O 7 Wherein x is more than 0 and less than or equal to 0.16.
Description
Technical Field
The invention relates to a strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic material and a preparation method thereof, belonging to the field of preparation of piezoelectric ceramic materials.
Background
The high-temperature piezoelectric vibration sensor plays an irreplaceable important role in monitoring the working states of key components such as an air inlet duct, a casing and turbine blades of an aeroengine, a fuel assembly of a nuclear reactor, a control rod and a cooling pipeline in China, but the aspect of China is blank. Therefore, the independent development of high-stability high-temperature piezoelectric vibration sensors is urgently needed in China, and the monopoly situation of international technical blockade is broken. The piezoelectric material is the core sensitive material of the high-temperature piezoelectric vibration sensor. The high-temperature piezoelectric ceramic material developed in China can basically meet the use requirements of piezoelectric vibration sensors at 260 ℃ and 482 ℃, but the research on the high-temperature piezoelectric ceramic material at the higher temperature of 650 ℃ and above is quite few, and the development process of the high-temperature piezoelectric vibration sensors in China is greatly restricted. The perovskite laminated structure piezoelectric ceramic has the characteristics of high stability, high-temperature resistivity and the like, and is an important candidate material for a high-temperature vibration sensor at the temperature of 650 ℃ or above.
However, major problems facing the development of perovskite layered piezoelectric ceramics include: (1) The dielectric breakdown field strength is lower than the coercive field strength, and the piezoelectric ceramic is difficult to polarize; (2) The low piezoelectric coefficient greatly restricts the application of the perovskite layered piezoelectric ceramics in the field of high-temperature piezoelectric vibration sensors.
At present, the piezoelectricity of the perovskite-layered piezoelectric ceramic material is improved by means of solid solution of a second component, ion doping optimized composition design, texturing process microstructure regulation and the like. Such as by mixing perovskite-structured Na 0.5 Bi 0.5 TiO 3 Introduction of piezoelectric ceramics into Sr 2 Nb 2 O 7 In (1), the piezoelectric coefficient d 33 The temperature is increased to 1.0pC/N; after the microstructure is adjusted by the textured discharge plasma sintering process, the piezoelectric coefficient d of the perovskite structure piezoelectric ceramic can be adjusted 33 The increase is 1.5pC/N. However, texturing processes such as hot pressing, hot forging, rapid plasma sintering and the like are complex and have poor repeatability. Although the piezoelectric performance of the perovskite-layer-structure piezoelectric ceramic is improved to a certain extent by means of ion doping, solid solution of a second component, process improvement and the like, the piezoelectric coefficient is still small. Therefore, how to improve the dielectric breakdown field strength and the piezoelectric coefficient of the perovskite layered structure material while keeping the high-temperature resistivity of the perovskite layered structure piezoelectric ceramic is a research focus and a key problem in the application field of the high-temperature piezoelectric ceramic.
Disclosure of Invention
Aiming at the problems, in order to maintain the high-temperature resistivity of the piezoelectric ceramic with the perovskite layered structure and simultaneously improve the piezoelectric coefficient of the piezoelectric ceramic, the invention provides a method for increasing the shortage of A-site Sr ions based on the non-stoichiometric ratio, and the lead-free high-temperature piezoelectric ceramic with high piezoelectric coefficient, high dielectric breakdown field strength and high-temperature resistivity is obtained by adjusting the inclination and rotation of oxygen octahedrons in the perovskite layered structure and the width of forbidden band, so as to meet the requirements of the high-temperature piezoelectric ceramic material for the high-temperature piezoelectric vibration sensor and play a role in promoting the application of the piezoelectric ceramic material with the perovskite layered structure in the high-temperature field of 650 ℃ and above.
In one aspect, the invention provides a strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic, and the chemical composition of the strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic is Sr 2-x Nb 2 O 7 Wherein x is more than 0 and less than or equal to 0.16.
The perovskite laminated structure piezoceramic material based on the non-stoichiometric A-site Sr ion deficiency has excellent piezoelectric property, resistance property and breakdown property, and can be applied to the high-temperature field with the temperature higher than 650 ℃ and above.
Preferably, a ZJ-3A type quasi-static d33 tester is adopted to test that the piezoelectric coefficient of the lead-free piezoelectric ceramic with the strontium niobate-based perovskite layered structure at room temperature of 25 ℃ is (0.8-2.1) pC/N.
Preferably, the DC resistivity of the lead-free piezoelectric ceramic with the niobium-strontium-based perovskite layered structure at 700 ℃ is tested to be 6.7 multiplied by 10 by adopting an HP4339B high-temperature resistance tester 6 ~1.1×10 7 Ω·cm。
Preferably, an SD-DC200kV direct-current voltage generator is adopted to test the dielectric breakdown field strength of the lead-free piezoelectric ceramic with the strontium niobate-based perovskite layered structure to be 206.2 kV/cm-435.7 kV/cm.
On the other hand, the invention provides a preparation method of the lead-free piezoelectric ceramic with the strontium niobate-based perovskite layered structure, which comprises the following steps:
(1) With SrCO 3 And Nb 2 O 5 As a starting material, according to Sr 2-x Nb 2 O 7 Weighing and mixing the stoichiometric ratio, and performing presintering synthesis to obtain ceramic powder;
(2) Mixing the ceramic powder and the binder, and then carrying out granulation, aging, compression molding and plastic removal to obtain a ceramic blank.
(3) And putting the ceramic blank into a high-temperature furnace, covering the ceramic blank with the obtained ceramic powder, and sintering to obtain the strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic.
Preferably, in the step (1), the mixing mode is ball milling mixing; the parameters of ball milling and mixing comprise: the ball milling medium is agate balls; the ball milling speed is 240-360 r/min, and the time is 4-6 hours; raw materials: ball milling medium: the mass ratio of the alcohol is 1:2: (1.8-2.0).
Preferably, in the step (1), the temperature of the pre-burning synthesis is 1000-1300 ℃, and the heat preservation time is not more than 24 hours; preferably, the heating rate of the pre-sintering synthesis is less than or equal to 2 ℃/min.
Preferably, in the step (2), the binder is at least one of polyvinyl alcohol, polyvinyl butyral and polyvinylidene fluoride, and the amount of the binder added is 6-7 wt.% of the weight of the ceramic powder.
Preferably, in the step (2), the temperature of the plastic discharge is 700-800 ℃, and the heat preservation time is 1-3 hours; preferably, the temperature rise rate of the plastic discharge is less than or equal to 2 ℃/min.
Preferably, in the step (3), the sintering temperature is 1350-1500 ℃, and the heat preservation time is not more than 24 hours; preferably, the temperature rise rate of the sintering is less than or equal to 2 ℃/min.
Preferably, the obtained strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic plate is processed into a required size, and then is subjected to ultrasonic cleaning, screen printing of a metal electrode, drying and burning of the metal electrode; the metal electrode is silver or platinum; the temperature of the metal electrode is 1000-1200 ℃, and the heat preservation time is 5-40 minutes.
Has the advantages that:
the lead-free piezoelectric ceramic with the strontium niobate-based perovskite layered structure has the piezoelectric coefficient of (0.8-2.1) pC/N at room temperature of 25 ℃ and the resistivity of 6.7 multiplied by 10 at 700 DEG C 6 ~1.1×10 7 Omega cm, dielectric breakdown field strength of 206.2 kV/cm-435.7 kV/cm, and preparingThe perovskite layered piezoelectric ceramics for the high-temperature vibration sensor with the temperature of more than 650 ℃ provides a new method and a new material composition design.
Drawings
FIG. 1 shows the different Sr deficiency at room temperature 2-x Dielectric breakdown field strength of the Nb2O7 ceramic;
FIG. 2 shows different Sr deficiencies at room temperature 2-x Nb 2 O 7 Piezoelectric coefficient d of ceramics 33 。
Detailed Description
The present invention is further illustrated by the following examples, which are to be construed as merely illustrative, and not a limitation of the present invention.
In the disclosure, the design idea of the A site Sr ion shortage based on the non-stoichiometric ratio is adopted to improve the high piezoelectricity, high temperature and high resistivity and high dielectric breakdown field strength of the piezoelectric ceramic with the niobate-based perovskite layered structure.
In one embodiment of the present invention, the perovskite layered structure piezoelectric ceramic has a chemical composition of: sr 2-x Nb 2 O 7 Wherein x is more than 0 and less than or equal to 0.16, and x = 0.02-0.16 is preferred.
In an alternative embodiment, the depolarization temperature of the perovskite layered piezoelectric ceramic based on the non-stoichiometric A site Sr ion deficiency is as high as 1100 ℃, the component with x =0.04 has the highest piezoelectric coefficient and has good temperature stability, the piezoelectric coefficient keeps a high value in the range of 25 ℃ -1100 ℃, the piezoelectric coefficient at 1100 ℃ is still 2.1pC/N, the breakdown field strength is 264.96kV/cm, and the high-temperature resistivity at 700 ℃ meets the requirement of practical use and is 1.1 x 107 omega-cm.
The following is an exemplary description of the method for producing a lead-free piezoelectric ceramic having a strontium niobate-based perovskite layered structure.
And (4) batching. Preparing ceramic powder by solid phase method with SrCO 3 Powder and Nb 2 O 5 The powder is used as a raw material and is prepared according to a stoichiometric ratio.
And (3) mixing materials. And performing primary ball milling on the raw material powder to obtain mixed powder. As an example of ball milling, the ball milling is wet planetary ball milling, the ball milling time is 4 hours, the rotating speed is 360 revolutions per minute, the mass ratio of the raw materials to the balls to the alcohol is 1.
And (4) pre-burning and synthesizing. And pre-burning and synthesizing the mixed powder to obtain the ceramic powder. Wherein the synthesis temperature of the mixed powder can be 1000-1300 ℃. The holding time at the synthesis temperature is not more than 24 hours, preferably 1 to 3 hours. As an example, the temperature is raised to 1200 ℃ at the temperature rise rate of not higher than 2 ℃/min, the temperature is kept for 1 to 3 hours, and the temperature is cooled to the room temperature along with the furnace.
Fine grinding and granulating. And (3) after the ceramic powder is subjected to fine grinding and drying, adding a binder for granulation to obtain granulated powder. The binder may be polyvinyl alcohol (PVA) or the like. The binder may be added in an amount of 6 to 7wt.% based on the weight of the ceramic powder. The parameters of the fine grinding comprise: the ball milling medium is agate balls; the ball milling speed is 240-360 r/min, and the time is 4-6 hours; raw materials: ball milling medium: the mass ratio of the alcohol is 1:2: (1.8-2.0). As an example, the fine grinding is wet planetary ball milling, the ball milling time is 4 hours, the rotating speed is 360 revolutions per minute, the mass ratio of the raw materials to the ball to the alcohol is 1.
And (5) molding. And aging the granulated powder, and then pressing and forming to obtain the ceramic biscuit. The ageing temperature can be 0-40 ℃, and the ageing time can be less than or equal to 48 hours, so as to enhance the flowability of the powder. The molding method can be isostatic pressing molding or/and dry pressing molding and the like.
And (7) plastic discharging. And heating the ceramic biscuit to remove the plastic to obtain a ceramic body. As an example, the temperature is raised to 700-800 ℃ at a temperature rise rate of not higher than 2 ℃/min, and the temperature is maintained for 1-3 hours.
And (4) sintering. And putting the ceramic body into a high-temperature furnace, covering the ceramic body with ceramic powder with the same composition as the obtained ceramic body, and sintering according to certain conditions to obtain the ceramic sheet. The sintering temperature can be 1350-1500 ℃. The heat preservation time of sintering is not more than 24 hours, preferably 1 to 3 hours. As an example, the temperature is raised to 1350-1400 ℃ at a heating rate of not higher than 2 ℃/min, kept for 1-3 hours, and cooled to room temperature along with the furnace.
And (4) preparing an electrode. And processing the sintered ceramic wafer into a required size, ultrasonically cleaning, screen-printing silver, drying and burning the silver to obtain the piezoelectric ceramic material. The silver firing condition can be 1000-1200 ℃, and the heat preservation time can be 5-40 minutes.
The present invention will be described in further detail with reference to examples. It is also to be understood that the following examples are illustrative of the present invention and are not to be construed as limiting the scope of the invention, and that certain insubstantial modifications and adaptations of the invention by those skilled in the art may be made in light of the above teachings. The specific process parameters and the like of the following examples are also only one example of suitable ranges, i.e., those skilled in the art can select the appropriate ranges through the description herein, and are not limited to the specific values exemplified below. The following percentages are by mass unless otherwise specified.
Example 1:
adopts a solid-phase reaction method to prepare perovskite lamellar structure Sr with A site deficiency 2-x Nb 2 O 7 A ceramic. Wherein the molar ratio of Sr deficiency is 0, 0.04, 0.08, 0.12 respectively as SrCO 3 、Nb 2 O 5 The raw materials are mixed by a wet ball milling method according to the following steps: grinding media: alcohol =1:2:1.8 for 4 hours to mix them uniformly. Drying at 100 ℃, sieving with a 30-mesh sieve, molding under 3MPa, heating to 1200 ℃ at a heating rate of 2 ℃/min, and preserving heat for 2 hours to synthesize the required ceramic powder.
Grinding the obtained ceramic powder, sieving with a 30-mesh sieve, and finely grinding by a wet ball grinding method according to the following ratio of the ceramic powder: grinding media: alcometer =1:2: mixing for 4 hours according to the mass ratio of 1.5, uniformly mixing, drying the obtained powder, adding 6wt.% of PVA binder, granulating, molding under the pressure of 5MPa, aging for 24 hours, sieving with a 40-mesh sieve, pressing into a wafer with the diameter of 13mm under the pressure of 1.0-1.2 MPa, heating to 800 ℃ in a low-temperature furnace, preserving heat for 60 minutes, and removing plastic to obtain a ceramic blank.
And (3) putting the ceramic blank into an alumina crucible, heating to 1400 ℃ at the heating rate of 2 ℃/min, preserving the heat for 2 hours, and cooling along with the furnace to obtain the ceramic chip.
And grinding the sintered ceramic wafer to be 0.15mm thin, cleaning, drying, screen printing platinum slurry, drying again, raising the temperature to 1200 ℃ at the heating rate of 2 ℃/min, and carrying out heat preservation for 30 minutes to burn platinum to obtain the piezoelectric ceramic material.
The piezoelectric, breakdown, and other properties of the poled ceramics were tested and the results are shown in figure 1 and table 1.
Table 1 shows the different Sr deficiency Sr prepared by the present invention 2-x Nb 2 O 7 Comparison of the performance parameters of the ceramics:
Claims (10)
1. the lead-free piezoelectric ceramic with the strontium niobate-based perovskite layered structure is characterized in that the chemical composition of the lead-free piezoelectric ceramic with the strontium niobate-based perovskite layered structure is Sr 2-x Nb 2 O 7 Wherein x is more than 0 and less than or equal to 0.16.
2. The lead-free piezoelectric ceramic of a strontium niobate-based perovskite layered structure according to claim 1, wherein the piezoelectric coefficient of the lead-free piezoelectric ceramic of a strontium niobate-based perovskite layered structure at 25 ℃ is (0.8 to 2.1) pC/N.
3. The lead-free piezoelectric ceramic of strontium niobate-based perovskite layered structure according to claim 1, wherein the direct current resistivity of the lead-free piezoelectric ceramic of strontium niobate-based perovskite layered structure at 700 ℃ is 6.7 x 10 6 ~1.1×10 7 Ω·cm。
4. The lead-free piezoelectric ceramic of a strontium niobate-based perovskite layered structure according to claim 1, wherein the dielectric breakdown field strength of the lead-free piezoelectric ceramic of a strontium niobate-based perovskite layered structure is 206.2kV/cm to 435.7kV/cm.
5. A method for producing a strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic according to any one of claims 1 to 4, comprising:
(1) With SrCO 3 And Nb 2 O 5 As a starting material, according to Sr 2-x Nb 2 O 7 Weighing and mixing the stoichiometric ratio, and performing presintering synthesis to obtain ceramic powder;
(2) Mixing the ceramic powder and a binder, and then granulating, aging, press-forming and plastic-removing to obtain a ceramic blank;
(3) And putting the ceramic blank into a high-temperature furnace, covering the ceramic blank with the obtained ceramic powder, and sintering to obtain the strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic.
6. The preparation method according to claim 5, wherein in the step (1), the mixing manner is ball milling mixing; the parameters of ball milling and mixing comprise: the ball milling medium is agate balls; the ball milling speed is 240-360 r/min, and the time is 4-6 hours; raw materials: ball milling medium: the mass ratio of the alcohol is 1:2: (1.8-2.0).
7. The preparation method according to claim 5, wherein in the step (1), the temperature of the pre-sintering synthesis is 1000-1300 ℃, and the holding time is not more than 24 hours; preferably, the temperature rising rate of the pre-sintering synthesis is less than or equal to 2 ℃/min.
8. The preparation method according to claim 5, wherein in the step (2), the binder is at least one of polyvinyl alcohol, polyvinyl butyral and polyvinylidene fluoride, and the binder is added in an amount of 6-7 wt.% based on the weight of the ceramic powder;
the temperature of the plastic discharging is 700-800 ℃, and the heat preservation time is 1-3 hours; preferably, the temperature rise rate of the plastic discharge is less than or equal to 2 ℃/min.
9. The method according to claim 5, wherein in the step (3), the sintering temperature is 1350-1500 ℃, and the holding time is not more than 24 hours; preferably, the temperature rise rate of the sintering is less than or equal to 2 ℃/min.
10. The preparation method according to claim 5, characterized in that the obtained strontium niobate-based perovskite layered structure lead-free piezoelectric ceramic sheet is processed into a required size, and then is subjected to ultrasonic cleaning, screen printing of a metal electrode, drying and firing of the metal electrode; the metal electrode is silver or platinum; the temperature of the metal electrode is 1000-1200 ℃, and the heat preservation time is 5-40 minutes.
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Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101062864A (en) * | 2007-05-28 | 2007-10-31 | 北京科技大学 | Niobic acid sodium potassium lithium radical leadless piezo-electric ceramic and preparation method thereof |
WO2015148367A1 (en) * | 2014-03-26 | 2015-10-01 | Drexel University | Chemically switchable ultraviolet photoluminescence |
CN106365636A (en) * | 2016-08-26 | 2017-02-01 | 中国科学院上海硅酸盐研究所 | High-Curie-temperature strontium-barium niobate pyroelectric ceramic material and preparation method thereof |
CN109704762A (en) * | 2019-02-22 | 2019-05-03 | 中国科学院上海硅酸盐研究所 | A kind of SrNb2 O6 base class antiferroelectric ceramics and its preparation method and application |
CN111533555A (en) * | 2020-04-28 | 2020-08-14 | 太原理工大学 | Preparation method of layered compact strontium potassium niobate leadless piezoelectric ceramic |
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Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101062864A (en) * | 2007-05-28 | 2007-10-31 | 北京科技大学 | Niobic acid sodium potassium lithium radical leadless piezo-electric ceramic and preparation method thereof |
WO2015148367A1 (en) * | 2014-03-26 | 2015-10-01 | Drexel University | Chemically switchable ultraviolet photoluminescence |
CN106365636A (en) * | 2016-08-26 | 2017-02-01 | 中国科学院上海硅酸盐研究所 | High-Curie-temperature strontium-barium niobate pyroelectric ceramic material and preparation method thereof |
CN109704762A (en) * | 2019-02-22 | 2019-05-03 | 中国科学院上海硅酸盐研究所 | A kind of SrNb2 O6 base class antiferroelectric ceramics and its preparation method and application |
CN111533555A (en) * | 2020-04-28 | 2020-08-14 | 太原理工大学 | Preparation method of layered compact strontium potassium niobate leadless piezoelectric ceramic |
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