CN115798843A - High-resistance low-B-value chip thermistor and preparation method thereof - Google Patents

Abstract

The invention discloses a high-resistance low-B value chip thermistor and a preparation method thereof, wherein the high-resistance low-B value chip thermistor comprises an insulating ceramic framework, a thermosensitive ceramic core and a terminal electrode; the insulating ceramic framework is a hollow cylinder framework with a rectangular section, the thermosensitive ceramic core is a core body filled in the hollow part of the insulating ceramic framework, and the thermosensitive ceramic core and the insulating ceramic framework form a co-blank integrated thermistor monomer; the two ends of the co-blank integrated thermistor monomer are respectively provided with the end electrodes. The chip thermistor can achieve high resistance and low B value, particularly improves resistance, has unexpected effects, is simple in structure, and is easy to achieve. In addition, the resistance value of the product can be conveniently adjusted only by changing the sectional area proportional relation of the insulating ceramic core and the thermosensitive ceramic layer, so that various products of different models can be conveniently manufactured, and the product has wide adaptability.

Description

High-resistance low-B-value chip thermistor and preparation method thereof

Technical Field

The invention relates to the technical field of resistance components, in particular to a high-resistance low-B-value chip thermistor and a preparation method thereof.

Background

Electronic components are developed towards miniaturization and generalization, and particularly, the complexity of product application environment puts higher requirements on the size, structure and performance of devices.

In the current industry field, there is a sheet type NTC (negative temperature coefficient) thermistor that can be used for large-batch precision mounting, and this NTC thermistor is easily limited by a thermosensitive material and cannot realize a high resistance value under the condition of satisfying a low B value. Therefore, the thermistor device having a high resistance value and a low B value is a vacancy in the entire system. In order to meet the requirements of applications in high temperature environments, the development of chip thermistors with high resistance and low B value in the same size is urgently needed.

Disclosure of Invention

In order to overcome the defects of the prior art, the embodiment of the application provides a high-resistance low-B value chip thermistor, which comprises an insulating ceramic framework, a thermosensitive ceramic core and a terminal electrode; the insulating ceramic framework is a hollow cylinder framework with a rectangular section, the thermosensitive ceramic core is a core body filled in the hollow part of the insulating ceramic framework, and the thermosensitive ceramic core and the insulating ceramic framework form a co-blank integrated thermistor monomer; and the two ends of the common blank integrated thermistor monomer are respectively provided with the end electrodes.

The embodiments of the present application may also employ the following alternatives/preferences:

the utility model discloses a blank integral type thermistor, including the end electrode, the end electrode includes that the end electrode is including the end electrode inlayer that closely laminates from interior to exterior in proper order, end electrode intermediate level and end electrode skin, the end electrode inlayer is lid shape, including diapire and perisporium, the diapire subsides of end electrode inlayer are located the free tip of blank integral type thermistor, the perisporium of end electrode inlayer is followed the free axial extension predetermined distance of blank integral type thermistor altogether to the cladding in on the wall of blank integral type thermistor monomer periphery wall altogether.

The cross-sectional width of the thermosensitive ceramic core is less than or equal to 99% of the cross-sectional width of the insulating ceramic layer, and the cross-sectional height of the thermosensitive ceramic core is less than or equal to 99% of the cross-sectional height of the insulating ceramic layer.

The appearance of insulating ceramic layer is the fillet cuboid, and the cross-section is fillet rectangle or fillet square.

The insulating ceramic framework is made of an alumina ceramic material, an aluminum nitride ceramic material or a zirconia ceramic material, and the thermosensitive ceramic layer is made of an NTC thermosensitive ceramic material, a PTC thermosensitive ceramic material or a constant-value resistance material.

The invention also provides a preparation method of the high-resistance low-B value chip thermistor, which comprises the following steps:

preparing an insulating ceramic green tape, namely preparing a flowable slurry from mixed powder of insulating ceramic powder and glass powder, a plasticizer, an adhesive and a dispersant according to a predetermined ratio, and preparing the green tape with a predetermined thickness by a tape casting process;

manufacturing a BAR block, namely laminating the green tape to a preset thickness, and manufacturing a compact BAR block by an isostatic pressing forming process, wherein the preset thickness at least comprises a first thickness and a second thickness, and the second thickness is smaller than the first thickness;

processing a groove with a preset width and depth on the BAR block with the first thickness along the length direction;

preparing a green body of the thermosensitive ceramic core, namely pressing and bonding thermosensitive ceramic powder, and then preparing a compact thermosensitive ceramic green body through an isostatic pressing forming process;

manufacturing strip-shaped thermosensitive ceramic cores, namely sintering the thermosensitive ceramic core green bodies to obtain polycrystalline sintered bodies, and then cutting the sintered bodies to obtain a plurality of strip-shaped thermosensitive ceramic cores with preset lengths;

manufacturing an integrated green body, namely filling the strip-shaped thermosensitive ceramic core into the groove of the BAR block with the first thickness, covering the BAR block with the second thickness on the upper layer, and laminating by an isostatic pressing forming process to form a co-green integrated thermistor main body green body taking the strip-shaped thermosensitive ceramic core as a core and an insulating ceramic framework formed by the BAR block with the first thickness and the BAR block with the second thickness as a shell;

unidirectional cutting and co-firing, wherein the co-blank integrated thermistor main body green body is subjected to unidirectional cutting and then sintered to obtain a co-blank integrated thermistor main body;

cutting, namely cutting the blank-sharing integrated thermistor main body into a plurality of blank-sharing integrated thermistor single bodies with set lengths;

and the two ends of the co-blank integrated thermistor monomer are respectively provided with the end-capped electrodes and plated with a plating layer.

The following alternatives/preferences can also be adopted in the preparation method examples of the present application:

and chamfering the co-blank integrated thermistor monomer after the cutting step and before the end sealing step.

In the isostatic pressing forming process of the BAR block manufacturing step, the applied pressure is 10000-15000psi, and in the isostatic pressing forming process of the integrated green body manufacturing, the applied pressure is 10000-15000psi.

The sintering peak temperature in the strip-shaped thermosensitive ceramic core manufacturing is 1100-1300 ℃, and the sintering peak temperature in the co-firing step is 800-1000 ℃.

The step of end capping the electrode is as follows: and (3) sealing the electrodes at two ends of the co-blank integrated thermistor monomer, burning the end electrodes at high temperature, plating nickel, plating tin, cleaning and drying to obtain a finished product of the high-resistance low-B-value chip thermistor.

Compared with the prior art, one or more technical schemes provided in the embodiment of the application have at least the following beneficial effects:

through sharing base integral type thermistor monomer, the low B value of high resistance can be realized to the chip thermistor of this application, especially the promotion of resistance has unexpected effect, and simple structure, realizes easily. In addition, the resistance value of the product can be conveniently adjusted only by changing the sectional area proportional relation of the insulating ceramic core and the thermosensitive ceramic layer, so that various products of different models can be conveniently manufactured, and the product has wide adaptability.

Drawings

Fig. 1A is a front view structural cross-sectional view of a high-resistance low-B-value chip NTC thermistor according to an embodiment of the present application;

fig. 1B is a schematic top view of a high-resistance low-B-value chip NTC thermistor according to an embodiment of the present application;

FIG. 1C isbase:Sub>A schematic cross-sectional view taken along A-A of FIG. 1B;

FIG. 2 is a process flow diagram of example two of the present application;

fig. 3 is a line drawing for comparing electrical properties of a conventional design product and an example product of the present application.

Detailed Description

High resistivity devices consume less power, but the B value of high resistivity materials is also high due to the material properties. The thermistor with low B value performance is required under the use condition (about 230 ℃) of high-temperature environment. A high resistance chip thermistor with low B value characteristics cannot be realized under fixed dimensional constraints. By increasing the resistance value of the thermistor with a low B value, the use condition in a high-temperature environment and the requirement for low power consumption can be satisfied. Besides, the resistance value of the device can be designed precisely by designing the size of the thermosensitive part, which means that the thermistor of a single B-value material can be designed into various models. Furthermore, the structural design is realized, and meanwhile, the development system of the thermosensitive material is simplified. The material system does not need to specially cater for the resistivity under the condition of meeting the B value, and the difficulty of material development is greatly reduced. Compared with the traditional chip NTC thermistor, the thermistor with the structural design has larger difference in process, saves the processes of printing, laminating and the like compared with the inner electrode type thermistor, and greatly reduces the material cost. The thermistor of this structure can be through the material of adaptation insulating ceramic layer in product quality, can assist the whole reliability that promotes the product.

The invention provides a structure of a chip thermistor with high resistance and low B value, which adopts a process of co-firing a thermal sensitive ceramic and an insulating ceramic green body, is equivalent to reducing the cross section area of a thermal sensitive ceramic body, thereby realizing the design of the electrical property of a device and breaking through the limitation caused by the material characteristics.

Description of terms:

in the application, the green tape is a semi-finished product formed by casting slurry which is subjected to uniform ball milling on a release film and drying; the BAR block is a semi-finished product formed by overlapping and pressing a plurality of layers of green tapes; the common-blank integrated thermistor main body is as follows: the strip-shaped thermosensitive ceramic core is used as a core, and an insulating ceramic framework formed by the BAR blocks with the first thickness and the BAR blocks with the second thickness is used as a shell to form a cogged integrated structure which is a main structure of a plurality of thermistors; the common-blank integrated thermistor monomer is as follows: and cutting the co-blank integrated thermistor main body according to a preset size to obtain the main body structure of the single thermistor.

For a better understanding of the above technical solutions, the present invention is further described below with reference to the accompanying fig. 1 to 3 and the specific embodiments, wherein like reference numerals refer to like parts unless otherwise specified. It should be emphasized that the following description is merely exemplary in nature and is not intended to limit the scope of the invention or its application. The background of the present invention may contain background information related to the problem or environment of the present invention and does not necessarily describe the prior art. Accordingly, the inclusion in the background section is not an admission of prior art by the applicant.

Example one

The present embodiment provides a high resistance low B value chip NTC thermistor, as shown in fig. 1A, 1B and 1C, comprising an insulating ceramic skeleton 1, a thermosensitive ceramic core 2 and terminal electrodes. The length, the width and the height of the high-resistance low-B-value chip NTC thermistor are respectively L1, W1 and H1, the length, the width and the height of the insulating ceramic framework 1 are respectively L2, W2 and H2, the length, the width and the height of the thermosensitive ceramic core 2 are respectively L2, W3 and H3, W3 is less than W2, and H3 is less than H2.

Insulating ceramic skeleton 1 is that the appearance is fillet cuboid, the cross-section is the rectangular hollow cylinder of fillet, thermal sensitive ceramic core 2 fill in the hollow intracardiac core of insulating ceramic skeleton 1, the length of thermal sensitive ceramic core 2 with insulating ceramic skeleton 1's length equals, the cross-sectional width of thermal sensitive ceramic core 2 is less than or equal to insulating ceramic skeleton 1's cross-sectional width's 99%, just the cross-sectional height of thermal sensitive ceramic core 2 is less than or equal to insulating ceramic skeleton 1's cross-sectional height's 99%, thermal sensitive ceramic core 2 with insulating ceramic skeleton 1 constitutes blank integral type thermistor monomer altogether. Preferably, the cross section of the thermosensitive ceramic core 2 is located in the middle of the cross section of the insulating ceramic framework 1.

The two ends of the co-blank integrated thermistor monomer are respectively provided with the end electrodes. Preferably, the terminal electrode comprises a terminal electrode inner layer (3a, 3b), a terminal electrode intermediate layer (4a, 4b) and a terminal electrode outer layer (5a, 5b), which are sequentially and tightly attached from inside to outside, the terminal electrode inner layer (3a, 3b) is in a cover shape and comprises a bottom wall and a peripheral wall, the bottom wall of the terminal electrode inner layer (3a, 3b) is attached to the end part of the single body of the common-blank one-piece thermistor, the peripheral wall of the terminal electrode inner layer (3a, 3b) is along the preset distance of the axial extension of the single body of the common-blank one-piece thermistor, and the terminal electrode is coated on the wall surface of the peripheral wall of the single body of the common-blank one-piece thermistor. Further preferably, the thicknesses of the terminal electrode inner layers (3a, 3b), the terminal electrode intermediate layers (4a, 4b), and the terminal electrode outer layers (5a, 5b) are gradually decreased. Preferably, the thicknesses of the end electrode inner layers (3a, 3b), the end electrode intermediate layers (4a, 4b) and the end electrode outer layers (5a, 5b) extending along the axial direction are gradually reduced.

Wherein, the heat-sensitive ceramic core 2 can be made of alumina ceramic material, aluminum nitride ceramic material or zirconia ceramic material. In addition, the structure of the embodiment is also suitable for a high-resistance chip PTC thermistor and a high-resistance chip constant value resistor, i.e. the insulating ceramic framework 1 can be made of an NTC thermal sensitive ceramic material, a PTC thermal sensitive ceramic material or a constant value resistor material.

The outer layer of the product obtained by the processing method is the insulating ceramic framework, the internal thermosensitive ceramic body can be protected, the product is not easy to damage, the chemical corrosion resistance is high, the environmental adaptability is greatly improved, and the product can be applied to various application environments.

Example two

A method for preparing a high-resistance low-B value chip NTC thermistor, as shown in fig. 2, for preparing the high-resistance low-B value chip NTC thermistor according to the first embodiment, includes the following steps:

the preparation method of the insulating ceramic green tape comprises the steps of preparing a fluid slurry from mixed powder of insulating ceramic powder and glass powder, a plasticizer, an adhesive and a dispersant according to a preset proportion, and preparing the green tape with a preset thickness by a tape casting process. Wherein the flowable slurry is prepared by a ball milling process. In this embodiment, the tape casting process preferably adopts a dry tape casting process, and the raw tape is square and has a thickness of 10 to 100 μm.

And manufacturing a BAR block, namely laminating the green tape to a preset thickness, and manufacturing a compact BAR block through an isostatic pressing forming process, wherein the preset thickness at least comprises a first thickness and a second thickness, and the second thickness is smaller than the first thickness. The method specifically comprises the following steps: the green tape was laminated in register and repeated until said first thickness of 400-420 μm and said second thickness of 200-220 μm were reached, which was pressed into a dense BAR block by an isostatic press forming process applying a pressure of 10000-15000psi.

And processing a groove with a preset width and depth on the BAR block with the first thickness along the length direction. The method specifically comprises the following steps: and performing complex cutting on the BAR block with the first thickness by using a grinding wheel cutter at a certain cutter height to construct a groove with the width of 0.1-0.25mm extending along the length direction of the BAR block.

And (3) manufacturing a thermal sensitive ceramic core green body, namely pressing and bonding thermal sensitive ceramic powder, and then preparing a compact thermal sensitive ceramic green body by an isostatic pressing forming process. The method specifically comprises the following steps: putting a proper amount of thermosensitive ceramic powder into a pressing die, pressing to bond the powder together in advance, and then further pressing to compact the powder into a compact green body by an isostatic pressing forming process and applying pressure of 10000-15000psi.

And manufacturing strip-shaped thermosensitive ceramic cores, namely sintering the thermosensitive ceramic core green bodies to obtain a polycrystalline sintered body, and then cutting the sintered body to obtain a plurality of strip-shaped thermosensitive ceramic cores with preset lengths. The sintering specifically may be: and sintering the green body in a box type sintering furnace, and forming the green body of the thermosensitive ceramic core into a compact polycrystalline sintered body at the peak sintering temperature of 1100-1300 ℃.

And manufacturing an integrated green body, namely filling the strip-shaped thermosensitive ceramic core into the groove of the BAR block with the first thickness, covering the BAR block with the second thickness on the upper layer, and laminating by an isostatic pressing forming process to form a co-green integrated thermistor main body green body taking the strip-shaped thermosensitive ceramic core as a core and taking an insulating ceramic framework formed by the BAR block with the first thickness and the BAR block with the second thickness as a shell. The method specifically comprises the following steps: and filling the strip-shaped heat-sensitive ceramic core into the groove of the BAR block with the first thickness, further covering the BAR block with the second thickness on the upper layer, and further applying 10000-15000psi of pressure for pressing through an isostatic pressing forming process.

And carrying out unidirectional cutting treatment and co-firing, carrying out unidirectional cutting treatment on the co-blank integrated thermistor main body green bodies, and sintering to obtain a plurality of co-blank integrated thermistor main bodies. The unidirectional cutting is to cut and separate the adjacent thermosensitive ceramic cores along the direction of the thermosensitive ceramic cores so as to obtain a plurality of strip-shaped common-blank integrated thermistor main bodies, and meanwhile, the cutting treatment can also ensure that the sintered structure is in accordance with the expectation. The co-firing specifically comprises: and sintering the blank-sharing integrated thermistor main body blank in a box type sintering furnace, and co-firing the strip-shaped thermosensitive ceramic core and the insulating ceramic framework into a whole at the sintering peak temperature of 800-1000 ℃.

And cutting, namely cutting the blank-sharing integrated thermistor main body into a plurality of blank-sharing integrated thermistor single bodies with set lengths. The cutting can be preferably carried out by using a grinding wheel cutting machine, and the size of the product obtained by the processing mode is uniform and stable.

And the end-capped electrodes are respectively arranged at two ends of the co-blank integrated thermistor monomer. The method specifically comprises the following steps: and (3) sintering the electrode at a high temperature and then electroplating, for example, adopting a conventional process of plating nickel and then plating tin, and cleaning and drying to obtain the manufactured high-resistance low-B-value chip NTC thermistor.

In addition, chamfering treatment can be carried out on the cogged integrated thermistor monomer before the electrode is terminated after cutting. Specifically, the chamfering treatment may be performed at a frequency of 20 to 45Hz by a planetary chamfering machine.

The processing method of the present embodiment can perform different electrical designs by changing the size of the groove and the width W3 and the height H3 of the cross section of the thermosensitive ceramic body, and generally, the size of the groove is slightly larger than the size of the thermosensitive ceramic body. Taking a product with 1005 size as an example, the cross-sectional dimensions W3 XH 3 of the thermosensitive ceramic body are respectively designed to be 0.1mm by 0.1mm, 0.15mm by 0.15mm, 0.2mm by 0.2mm, and 0.25mm by 0.25mm, and the electrical properties detected by comparing the obtained product with the conventional product without an insulating layer are shown in FIG. 3, which can be seen from the data in the figure: the resistance value of a conventional device without an insulating layer is 40k Ω, the electrical property of the device with the thermosensitive ceramic core with the cross section of 0.25mm × 0.25mm is 130k Ω, the electrical property of the device with the thermosensitive ceramic core with the cross section of 0.2mm × 0.2mm is 203k Ω, the electrical property of the device with the thermosensitive ceramic core with the cross section of 0.15mm × 0.15mm is 360k Ω, and the electrical property of the device with the thermosensitive ceramic core with the cross section of 0.1mm × 0.1mm is 864k Ω. Under the condition of ensuring the B value of a specific thermosensitive material, the size of the thermosensitive ceramic core is designed to realize a specific device resistance value. The structural design of this application embodiment not only can increase by a wide margin the resistance value of device, makes the design to heat sensitive layer size have more design freedom moreover, can make into multiple model, satisfies more different application demands. In addition, the above experimental data also indicate that the resistance of the chip thermistor manufactured by the structure that the insulating ceramic framework wraps the thermosensitive ceramic core (i.e. the thermosensitive ceramic core is used as the core and the insulating ceramic framework is used as the shell) can be improved by far more than the chip thermistor manufactured by the structure that the insulating ceramic core is used as the core and the thermosensitive ceramic layer is used as the shell.

The processing method of the embodiment is also suitable for the high-resistance chip PTC thermistor and the high-resistance chip constant-value resistor. Moreover, the method has the advantages of simple process steps, low precision requirement, easy mass production and high production efficiency. The traditional manufacturing process of the same-electrical-property thin-film thermistor comprises high-precision processes such as sputtering, laser etching and the like, and the processes such as sputtering, etching, laser resistance trimming and the like need to be operated repeatedly, so that the process is complex, the efficiency is low, and the cost is high.

While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.

Those skilled in the art will be able to combine and combine features of different embodiments or examples and features of different embodiments or examples described in this specification without contradiction.

It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. A high-resistance low-B value chip thermistor is characterized by comprising an insulating ceramic framework, a thermosensitive ceramic core and a terminal electrode;

the insulating ceramic framework is a hollow cylinder framework with a rectangular section, the thermosensitive ceramic core is a core body filled in the hollow part of the insulating ceramic framework, and the thermosensitive ceramic core and the insulating ceramic framework form a co-blank integrated thermistor monomer;

the two ends of the co-blank integrated thermistor monomer are respectively provided with the end electrodes.

2. The high-resistance low-B-value chip thermistor according to claim 1, wherein the terminal electrode comprises an inner terminal electrode layer, an intermediate terminal electrode layer and an outer terminal electrode layer, which are tightly attached from inside to outside, the inner terminal electrode layer is in a cover shape and comprises a bottom wall and a peripheral wall, the bottom wall of the inner terminal electrode layer is attached to the end of the single blank-body thermistor, and the peripheral wall of the inner terminal electrode layer extends along the axial direction of the single blank-body thermistor for a predetermined distance and covers the wall surface of the peripheral wall of the single blank-body thermistor.

3. The high resistance, low B-value chip thermistor of claim 1, wherein the cross-sectional width of the thermal sensitive ceramic core is less than or equal to 99% of the cross-sectional width of the insulating ceramic layer, and the cross-sectional height of the thermal sensitive ceramic core is less than or equal to 99% of the cross-sectional height of the insulating ceramic layer.

4. The high resistance low B value chip thermistor according to claim 1, wherein the shape of the insulating ceramic layer is a rounded rectangular parallelepiped, and the cross section is a rounded rectangle or a rounded square.

5. The high resistance low B-value chip thermistor according to any of claims 1 to 4, characterized in that the insulating ceramic former is made of an alumina ceramic material, an aluminum nitride ceramic material or a zirconia ceramic material, and the thermosensitive ceramic layer is made of an NTC thermosensitive ceramic material, a PTC thermosensitive ceramic material or a fixed value resistance material.

6. A preparation method of a high-resistance low-B value chip thermistor is characterized by comprising the following steps:

preparing an insulating ceramic green tape, namely preparing a flowable slurry from mixed powder of insulating ceramic powder and glass powder, a plasticizer, an adhesive and a dispersant according to a predetermined proportion, and preparing the green tape with a predetermined thickness by a tape casting process;

manufacturing a BAR block, namely laminating the green tape to a preset thickness, and manufacturing a compact BAR block by an isostatic pressing forming process, wherein the preset thickness at least comprises a first thickness and a second thickness, and the second thickness is smaller than the first thickness;

processing a groove with a preset width and depth on the BAR block with the first thickness along the length direction;

preparing a green body of the thermosensitive ceramic core, namely pressing and bonding thermosensitive ceramic powder, and then preparing a compact thermosensitive ceramic green body through an isostatic pressing forming process;

manufacturing strip-shaped thermosensitive ceramic cores, namely sintering the thermosensitive ceramic core green bodies to obtain a polycrystalline sintered body, and then cutting the sintered body to obtain a plurality of strip-shaped thermosensitive ceramic cores with preset lengths;

manufacturing an integrated green body, namely filling the strip-shaped thermosensitive ceramic core into the groove of the BAR block with the first thickness, covering the BAR block with the second thickness on the upper layer, and laminating by an isostatic pressing forming process to form a co-green integrated thermistor main body green body taking the strip-shaped thermosensitive ceramic core as a core and an insulating ceramic framework formed by the BAR block with the first thickness and the BAR block with the second thickness as a shell;

unidirectional cutting and co-firing, wherein the co-blank integrated thermistor main body green body is subjected to unidirectional cutting and then sintered to obtain a co-blank integrated thermistor main body;

cutting, namely cutting the blank-sharing integrated thermistor main body into a plurality of blank-sharing integrated thermistor single bodies with set lengths;

and the two ends of the co-blank integrated thermistor monomer are respectively provided with the end-capped electrodes and plated with a plating layer.

7. The method for preparing a high resistance low B value chip thermistor according to claim 6, characterized in that the co-blank integrated thermistor monomer is further subjected to chamfering treatment after the cutting step and before the end-capping step.

8. The method of claim 6, wherein the pressure applied in the isostatic pressing process of the BAR block manufacturing step is 10000-15000psi, and the pressure applied in the isostatic pressing process of the one-piece green body manufacturing step is 10000-15000psi.

9. The method according to claim 6, wherein the sintering peak temperature in the strip-shaped thermal sensitive ceramic core is 1100-1300 ℃, and the sintering peak temperature in the co-firing step is 800-1000 ℃.

10. The method for preparing a high resistance low B value chip thermistor according to any of claims 7-9, wherein the step of end-capping the electrodes is: and (3) firstly, sealing the electrodes at two ends of the co-blank integrated thermistor monomer, burning the end electrodes at high temperature, then plating nickel, then plating tin, finally cleaning and drying to obtain a finished product of the high-resistance low-B-value chip thermistor.

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