CN115769697A - 发光器件及其制造方法 - Google Patents
发光器件及其制造方法 Download PDFInfo
- Publication number
- CN115769697A CN115769697A CN202180000884.9A CN202180000884A CN115769697A CN 115769697 A CN115769697 A CN 115769697A CN 202180000884 A CN202180000884 A CN 202180000884A CN 115769697 A CN115769697 A CN 115769697A
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- metal nano
- sub
- pixel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 229910052751 metal Inorganic materials 0.000 claims abstract description 226
- 239000002184 metal Substances 0.000 claims abstract description 226
- 239000002120 nanofilm Substances 0.000 claims abstract description 137
- 239000002086 nanomaterial Substances 0.000 claims abstract description 38
- 230000005525 hole transport Effects 0.000 claims abstract description 35
- 238000002347 injection Methods 0.000 claims description 57
- 239000007924 injection Substances 0.000 claims description 57
- 239000002082 metal nanoparticle Substances 0.000 claims description 49
- 239000002245 particle Substances 0.000 claims description 33
- 239000002105 nanoparticle Substances 0.000 claims description 32
- 239000010931 gold Substances 0.000 claims description 31
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 29
- 229910052737 gold Inorganic materials 0.000 claims description 29
- 238000000034 method Methods 0.000 claims description 23
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 21
- 239000002096 quantum dot Substances 0.000 claims description 21
- 229910052709 silver Inorganic materials 0.000 claims description 21
- 239000004332 silver Substances 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 15
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 15
- 239000003086 colorant Substances 0.000 claims description 15
- 239000000463 material Substances 0.000 claims description 15
- 239000000758 substrate Substances 0.000 claims description 14
- 238000004528 spin coating Methods 0.000 claims description 12
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 6
- 238000001704 evaporation Methods 0.000 claims description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 6
- 230000005540 biological transmission Effects 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 4
- 229910052763 palladium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 2
- 230000003287 optical effect Effects 0.000 abstract description 15
- 239000010410 layer Substances 0.000 description 388
- 239000010408 film Substances 0.000 description 33
- 230000000694 effects Effects 0.000 description 16
- 239000002784 hot electron Substances 0.000 description 13
- 238000000862 absorption spectrum Methods 0.000 description 11
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000010521 absorption reaction Methods 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 238000007641 inkjet printing Methods 0.000 description 8
- 239000002052 molecular layer Substances 0.000 description 6
- 239000000243 solution Substances 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000011787 zinc oxide Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 238000004020 luminiscence type Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 230000000171 quenching effect Effects 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 230000001105 regulatory effect Effects 0.000 description 4
- 230000007547 defect Effects 0.000 description 3
- 230000005284 excitation Effects 0.000 description 3
- 239000003574 free electron Substances 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 229910000510 noble metal Inorganic materials 0.000 description 3
- 238000002198 surface plasmon resonance spectroscopy Methods 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000000903 blocking effect Effects 0.000 description 2
- 238000009835 boiling Methods 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000001808 coupling effect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000002346 layers by function Substances 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 238000003756 stirring Methods 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 230000002238 attenuated effect Effects 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 description 1
- 238000005401 electroluminescence Methods 0.000 description 1
- 230000005281 excited state Effects 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000012010 growth Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- PNHVEGMHOXTHMW-UHFFFAOYSA-N magnesium;zinc;oxygen(2-) Chemical compound [O-2].[O-2].[Mg+2].[Zn+2] PNHVEGMHOXTHMW-UHFFFAOYSA-N 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 230000000877 morphologic effect Effects 0.000 description 1
- 239000002110 nanocone Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 239000002057 nanoflower Substances 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000035040 seed growth Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 230000001502 supplementing effect Effects 0.000 description 1
- 238000001308 synthesis method Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
- -1 zinc lithium zinc oxide Chemical compound 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/30—Devices specially adapted for multicolour light emission
- H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/008—Surface plasmon devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/301—Details of OLEDs
- H10K2102/331—Nanoparticles used in non-emissive layers, e.g. in packaging layer
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Life Sciences & Earth Sciences (AREA)
- Biophysics (AREA)
- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
一种发光器件及其制造方法，该发光器件包括：相对设置的阳极层(100)和阴极层(200)；设置于阳极层(100)和阴极层(200)之间的发光层(300)；设置于发光层(300)与阳极层(100)之间的空穴传输层(400)；设置于发光层(300)与阴极层(200)之间的电子传输层(500)；该发光器件还包括：至少一层包括金属纳米结构的金属纳米膜层(600)，该金属纳米膜层(600)设置于阳极层(100)和阴极层(200)之间，并与发光层(300)之间至少相隔一个膜层设置。该发光器件及其制造方法，能够同时优化发光器件的电学性能和光学性能，从而提高器件的效率和寿命。
Description
PCT国内申请，说明书已公开。
Claims (19)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2021/089593 WO2022226683A1 (zh) | 2021-04-25 | 2021-04-25 | 发光器件及其制造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115769697A true CN115769697A (zh) | 2023-03-07 |
Family
ID=83846557
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202180000884.9A Pending CN115769697A (zh) | 2021-04-25 | 2021-04-25 | 发光器件及其制造方法 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240188394A1 (zh) |
| CN (1) | CN115769697A (zh) |
| WO (1) | WO2022226683A1 (zh) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103872261B (zh) * | 2014-02-28 | 2017-03-15 | 京东方科技集团股份有限公司 | 一种有机电致发光器件和显示装置 |
| CN107230747A (zh) * | 2017-05-27 | 2017-10-03 | 深圳市华星光电技术有限公司 | Oled显示面板的制作方法及oled显示面板 |
| CN111785840A (zh) * | 2020-07-02 | 2020-10-16 | Tcl华星光电技术有限公司 | 有机发光二极管器件及其制作方法、显示装置 |
| CN111816792A (zh) * | 2020-08-18 | 2020-10-23 | 京东方科技集团股份有限公司 | 发光器件及显示装置 |
-
2021
- 2021-04-25 US US17/777,411 patent/US20240188394A1/en active Pending
- 2021-04-25 CN CN202180000884.9A patent/CN115769697A/zh active Pending
- 2021-04-25 WO PCT/CN2021/089593 patent/WO2022226683A1/zh active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022226683A1 (zh) | 2022-11-03 |
| US20240188394A1 (en) | 2024-06-06 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11569481B2 (en) | OLED device having enhancement layer(s) | |
| JP7320851B2 (ja) | 補助電極を提供するための方法および補助電極を含むデバイス | |
| JP2022508040A (ja) | 光透過領域を含むオプトエレクトロニクスデバイス | |
| CN107507920B (zh) | 有机电致发光二极管、显示基板及其制作方法、显示装置 | |
| CN109524442A (zh) | 有机发光二极管显示基板及其制备方法、显示装置 | |
| CN104319352B (zh) | 一种顶发射白光oled器件及其制备方法、显示装置 | |
| EP3699965B1 (en) | Light emitting diode, manufacturing method therefor, and display apparatus | |
| Wang et al. | High-efficiency and high-resolution patterned quantum dot light emitting diodes by electrohydrodynamic printing | |
| Jiao et al. | 61‐2: Weakening Micro‐Cavity Effects in White Top‐Emitting WOLEDs with Semitransparent Metal Top Electrode | |
| US12069888B2 (en) | Organic light emitting display substrate and manufacturing method thereof, and organic light emitting display panel | |
| CN111384255A (zh) | 一种量子点发光二极管及其制备方法 | |
| US10930888B2 (en) | High-efficiency QLED structures | |
| CN115769697A (zh) | 发光器件及其制造方法 | |
| CN111430573A (zh) | 一种有机发光器件及其制备方法、显示面板 | |
| EP2860152B1 (en) | Method for fabricating microstructure to generate surface plasmon waves | |
| CN208173629U (zh) | 电极及有机电致发光装置 | |
| US11871610B2 (en) | Dual bank structure for improved extraction from an emissive layer | |
| KR20230039558A (ko) | 장수명 oled 디스플레이 | |
| KR101549357B1 (ko) | 이방성 금속 나노입자를 이용하는 고효율 전계발광소자 | |
| CN111883681B (zh) | 发光器件及其制备方法和显示装置 | |
| CN114695689A (zh) | 显示器件 | |
| KR20090114886A (ko) | 표면 플라즈몬 공명을 이용한 형광 강화 ｏｌｅｄ | |
| US20230165042A1 (en) | Light Emitting Device and Associated Methods | |
| CN111769202B (zh) | 一种基于银纳米线电极的有机发光器件结构 | |
| US20230413590A1 (en) | Organic electroluminescent devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |