CN115560953A - Test system and test method of semiconductor laser - Google Patents
Test system and test method of semiconductor laser Download PDFInfo
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- CN115560953A CN115560953A CN202211099094.3A CN202211099094A CN115560953A CN 115560953 A CN115560953 A CN 115560953A CN 202211099094 A CN202211099094 A CN 202211099094A CN 115560953 A CN115560953 A CN 115560953A
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- G—PHYSICS
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- G01M—TESTING STATIC OR DYNAMIC BALANCE OF MACHINES OR STRUCTURES; TESTING OF STRUCTURES OR APPARATUS, NOT OTHERWISE PROVIDED FOR
- G01M11/00—Testing of optical apparatus; Testing structures by optical methods not otherwise provided for
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J4/00—Measuring polarisation of light
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Abstract
The application relates to the field of semiconductor laser chips, and discloses a test system and a test method of a semiconductor laser. The test system comprises a semiconductor laser chip, a first integrating sphere, a polarization beam splitter and a second integrating sphere, wherein a first light beam generated by the semiconductor laser chip passes through the first integrating sphere to test the light power of the light beam, a second light beam passes through a through hole of the first integrating sphere to reach the second integrating sphere through the polarization beam splitter, and the polarization degree of the second light beam is tested in the second integrating sphere. The test system can test the optical power and the polarization degree of the semiconductor laser chip at the same time, shortens the test time, improves the test efficiency and improves the use experience of users.
Description
Technical Field
The present disclosure relates to the field of semiconductor laser chips, and more particularly, to a system and a method for testing a semiconductor laser.
Background
With the wide application of semiconductor lasers in the fields of pump lasers, plastic material welding, medical treatment, marking, night vision, guidance and the like, the requirements on the beam quality, the power density and the brightness of the semiconductor laser are higher and higher. In order to improve the power of a semiconductor laser fiber coupling module in the industry at present, on one hand, the power of a single COS is continuously improved, on the other hand, a more advanced packaging technology is adopted, more COS are integrated in the same tube under the condition that the number of the packaged tube volumes is not increased, one of the mainstream packaging technologies at present is a polarization beam combination technology, and a plurality of single-tube lasers are combined to achieve higher power and higher brightness output. This requires screening of the power, wavelength and polarization of the individual lasers to select COS with high power and polarization for use. However, two important indexes of the optical power and the polarization degree of the semiconductor laser in the market at present cannot be tested simultaneously, so that the testing efficiency is low and the testing time is long.
Disclosure of Invention
The application provides a test system of semiconductor laser to solve the problem that can't measure two parameters of semiconductor laser luminous power and polarization degree simultaneously among the prior art. The test system of the present application includes:
the center of a circle of the first integrating sphere is positioned on the optical axis of a first light beam generated by the semiconductor laser chip, the first integrating sphere is provided with a first accommodating cavity, the first accommodating cavity is used for receiving the first light beam and detecting the optical power of the first light beam, and one side, away from the semiconductor laser chip, of the first integrating sphere is provided with a through hole;
the polarization beam splitter is arranged on one side, away from the semiconductor laser chip, of the first integrating sphere, and the first integrating sphere transmits part of the first light beam to the polarization beam splitter through the through hole;
the second integrating sphere is arranged on one side, away from the first integrating sphere, of the polarization beam splitter and provided with a second accommodating cavity, and the second accommodating cavity is used for receiving a second light beam emitted by the through hole and a third light beam emitted by the polarization beam splitter and further testing the polarization degree of the second light beam.
Wherein the polarization beam splitter moves along a direction perpendicular to the optical axis of the second light beam transmitted through the through hole.
The second integrating sphere acquires first relative power of a third light beam passing through the polarization beam splitter before the polarization beam splitter moves; and the second integrating sphere obtains second relative power of a second light beam directly transmitted by the through hole after the polarization beam splitter moves.
The test system comprises a controller, wherein the controller is connected with the second integrating sphere and used for obtaining the polarization degree of the second light beam according to the first relative power and the second relative power.
The test system comprises a guide rail and a driving assembly, the guide rail extends in the direction perpendicular to the optical axis of the second light beam, the polarization beam splitter is arranged on the guide rail, and the driving assembly is used for driving the guide rail so that the polarization beam splitter moves in the extending direction of the guide rail.
Wherein, the first integrating sphere is provided with an optical fiber output interface.
The testing system comprises an optical fiber and a spectrometer, wherein the spectrometer is connected with the optical fiber output interface through the optical fiber and is used for performing spectrum testing on the first light beam.
The test system further comprises a heat dissipation assembly, the semiconductor laser chip is arranged on the heat dissipation assembly, and the heat dissipation assembly is used for dissipating heat of the semiconductor laser chip.
The radiating assembly comprises a radiating plate, a refrigerating plate and a water cooling module which are sequentially stacked, and the semiconductor laser chip is arranged on the radiating plate.
The testing system comprises a first accommodating cavity, a second accommodating cavity, a first integrating sphere, a second integrating sphere, a testing system and a second testing system, wherein the first integrating sphere is a large integrating sphere, the second integrating sphere is a small integrating sphere, the testing system comprises a first photoelectric detector and a second photoelectric detector, the first photoelectric detector is arranged in the first accommodating cavity, and the second photoelectric detector is arranged in the second accommodating cavity.
In order to solve the above problem, the present application further provides a testing method for a semiconductor laser, which is applied to the testing system as described above, and includes:
receiving a first light beam of the semiconductor laser chip through the first integrating sphere and detecting the optical power of the first light beam;
receiving the second light beam by the polarizing beam splitter to cause the polarizing beam splitter to emit the third light beam;
and receiving the second light beam and the third light beam through the second integrating sphere, and testing the polarization degree of the second light beam.
Wherein the step of receiving the second light beam and the third light beam through the second integrating sphere and testing the degree of polarization of the second light beam comprises:
before the polarization beam splitter moves, acquiring first relative power of the third light beam through the second integrating sphere;
after the polarization beam splitter moves, receiving a second light beam directly transmitted by the first integrating sphere through the second integrating sphere, and acquiring second relative power of the second light beam through the second integrating sphere;
and calculating the polarization degree of the second light beam based on the first relative power and the second relative power.
The beneficial effect of this application is: the application provides a test system includes semiconductor laser chip, first integrating sphere, polarization beam splitter and second integrating sphere, and the luminous power of light beam is tested out to first light beam that semiconductor laser chip produced in first integrating sphere, and the second light beam reachs the second integrating sphere through the through-hole of first integrating sphere through polarization beam splitter to the polarization degree of second light beam is tested out in the second integrating sphere. The test system can test the optical power and the polarization degree of the semiconductor laser chip at the same time, shortens the test time, improves the test efficiency and improves the use experience of a user.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Wherein:
FIG. 1 is a schematic diagram of an embodiment of a test system of the present application;
FIG. 2 is a schematic flow chart diagram of an embodiment of a test method of the present application;
fig. 3 is a schematic flowchart of an embodiment of step S13 of the testing method shown in fig. 2.
Reference numerals: a test system 1; a semiconductor laser chip 10; a first integrating sphere 20; a through hole 21; a polarization beam splitter 30; a guide rail 31; a second integrating sphere 40; a spectrometer 50; an optical fiber 51; a heat dissipating component 60; a heat dissipation plate 61; a refrigeration pill 62; a water cooling module 63; a first direction X; a second direction Y.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, embodiments accompanying the present application are described in detail below with reference to the accompanying drawings. It is to be understood that the specific embodiments described herein are merely illustrative of the application and are not limiting of the application. It should be further noted that, for the convenience of description, only some of the structures related to the present application are shown in the drawings, not all of the structures. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
The terms "first", "second", etc. in this application are used to distinguish between different objects and not to describe a particular order. Furthermore, the terms "include" and "have," as well as any variations thereof, are intended to cover a non-exclusive inclusion. For example, a process, method, system, article, or apparatus that comprises a list of steps or elements is not limited to only those steps or elements but may alternatively include other steps or elements not expressly listed or inherent to such process, method, article, or apparatus.
Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein may be combined with other embodiments.
Referring to fig. 1, fig. 1 is a schematic structural diagram of an embodiment of a test system according to the present application. As shown in fig. 1, a test system 1 for a semiconductor laser provided by the present application includes a semiconductor laser chip 10, a first integrating sphere 20, a polarization beam splitter 30, and a second integrating sphere 40.
Wherein, the center of the first integrating sphere 20 is located on the optical axis of the first light beam generated by the semiconductor laser chip 10; the polarization beam splitter 30 is disposed on a side of the first integrating sphere 20 away from the semiconductor laser chip 10, for example, the polarization beam splitter 30 may be disposed parallel to the first integrating sphere 20 along the optical axis of the first light beam; second integrating sphere 40 is disposed on a side of polarizing beam splitter 30 remote from first integrating sphere 20.
Specifically, the first integrating sphere 20 has a first receiving cavity, the first receiving cavity is used for receiving a first light beam generated by the semiconductor laser chip 10 and testing the optical power of the first light beam, meanwhile, a through hole 21 is arranged on one side of the first integrating sphere 20 away from the semiconductor laser chip 10, and a second light beam can be transmitted out of the through hole 21; the polarization beam splitter 30 is used for receiving the second light beam transmitted through the through hole 21, splitting two polarization direction light beams in the second light beam and emitting a third light beam only having one polarization direction; the second integrating sphere 40 has a second receiving cavity for receiving the second light beam emitted from the through hole 21 and the third light beam emitted from the polarization beam splitter 30, and further testing the polarization degree of the second light beam.
Based on the test system 1, the optical power and the polarization degree of the semiconductor laser chip 10 can be measured simultaneously in one set of test system 1, so that the measurement time is shortened, and the measurement efficiency is improved.
Alternatively, the polarization beam splitter 30 is moved in a direction perpendicular to the optical axis of the second light beam transmitted out of the through hole 21.
Specifically, the polarization beam splitter 30 can move up and down along the direction perpendicular to the optical axis of the second light beam transmitted from the through hole 21, so as to split the light beam entering the second integrating sphere 40 into a third light beam emitted by the polarization beam splitter 30 and the second light beam directly transmitted from the through hole 21; the optical axis direction of the second light beam transmitted through the through hole 21 is set to be a first direction X, the optical axis direction of the second light beam transmitted through the through hole 21 is set to be a second direction Y, and the second direction Y is perpendicular to the first direction X.
Alternatively, the second integrating sphere 40 obtains the first relative power of the third light beam passing through the polarization beam splitter 30 before the polarization beam splitter 30 moves, and obtains the second relative power of the second light beam directly transmitted from the through hole 21 after the polarization beam splitter 30 moves.
Specifically, the polarization beam splitter 30 is located in the optical axis direction of the second light beam transmitted from the through hole 21 before moving, that is, the second light beam needs to pass through the polarization beam splitter 30 to reach the second integrating sphere 40, the polarization beam splitter 30 generates a third light beam after receiving the second light beam and emits the third light beam, and at this time, the second integrating sphere 40 receives the third light beam and tests a first relative power of the third light beam; after the polarization beam splitter 30 moves, the second light beam is located outside the optical axis direction of the second light beam transmitted from the through hole 21, that is, the second light beam can reach the second integrating sphere 40 without passing through the polarization beam splitter 30, and at this time, the second integrating sphere 40 receives the second light beam and tests the second relative power of the second light beam.
Optionally, the test system 1 comprises a controller (not shown).
The controller is connected to the second integrating sphere 40, and is configured to obtain a degree of polarization of the light beam emitted by the semiconductor laser chip 10 according to the first relative power and the second relative power.
Specifically, since the device only intercepts a part of the first light beam generated by the semiconductor laser chip 10 when the first light beam passes through the first integrating sphere 20, the through hole 21 and the second integrating sphere 40, and information carried in the light beam is not changed, the polarization degree of the second light beam measured by the second integrating sphere 40 is the polarization degree of the first light beam generated by the semiconductor laser chip 10 in the polarization direction.
The polarization beam splitter 30 is arranged to be movable along the first direction X, so that the second integrating sphere 40 can obtain the first relative power and the second relative power, and then the polarization degree of the first light beam emitted by the semiconductor laser chip 10 is obtained through the controller connected with the second integrating sphere 40, so that the polarization degree test of the light beam is more convenient, and the user experience is improved.
Optionally, the test system 1 comprises a guide rail 31 and a drive assembly (not shown).
Wherein the guide rail 31 extends in a first direction X.
Specifically, the polarization beam splitter 30 is disposed on the guide rail 31, and the driving assembly is configured to drive the guide rail 31, so that the polarization beam splitter 30 can move along the extending direction of the guide rail 31, and the test of the degree of polarization of the light beam is achieved.
Optionally, the first integrating sphere 20 is provided with an optical fiber output interface (not shown);
optionally, the test system 1 further comprises a spectrometer 50 and an optical fiber 51.
Specifically, the spectrometer 50 is connected to the optical fiber output interface through the optical fiber 51, so as to receive the first light beam generated by the semiconductor laser chip transmitted through the first integrating sphere 20, and perform a spectrum test on the first light beam.
The first integrating sphere 20 is configured to have a fiber output interface, and the spectrometer 50 can be connected to the test system 1 to perform a spectrum test on the first light beam generated by the semiconductor laser chip 10, so that the function of the test system 1 is more comprehensive, and more convenience is provided for users.
Optionally, the test system 1 further comprises a heat sink assembly 60.
The semiconductor laser chip 10 is disposed on the heat sink 60, and the heat sink 60 is used for dissipating heat of the semiconductor laser chip 10.
Specifically, the heat dissipation assembly 60 includes a heat dissipation plate 61, a cooling plate 62 and a water cooling module 63, which are stacked in sequence. The semiconductor laser chip 10 is arranged on the heat dissipation plate 61, and the heat dissipation plate 61 is used for dissipating heat of the semiconductor laser chip 10; for example, a heat dissipation copper plate may be used to dissipate heat of the semiconductor laser chip 10, and a user may replace the heat dissipation plate according to actual needs, which is not limited in the present application. The refrigeration piece 62 is used for refrigerating or heating, and the water cooling module 63 is placed at the bottom of the refrigeration piece 62 and used for dissipating heat from the bottom of the refrigeration piece 62.
The heat dissipation assembly 60 is disposed under the semiconductor laser chip 10 to dissipate heat from the semiconductor laser chip 10, so as to ensure that the semiconductor laser chip 10 is at a suitable working temperature and prolong the working time of the semiconductor laser chip 10.
Optionally, the first integrating sphere 20 is a large integrating sphere, the second integrating sphere 40 is a small integrating sphere, and a user can select the size of the integrating sphere according to the test standard requirement and the size of the object to be tested, which is not limited in the present application.
Optionally, the test system 1 comprises a first photo detector (not shown) and a second photo detector (not shown).
The first photodetector is disposed in the first accommodating cavity and is configured to measure optical power of the first light beam generated by the semiconductor laser chip 10; the second photodetector is disposed in the second accommodating cavity, and is configured to measure a first relative power of the third light beam before the polarization beam splitter 30 moves and a second relative power of the second light beam after the polarization beam splitter 30 moves, and calculate a polarization degree of the light beam of the semiconductor laser chip 10 through the controller.
In summary, the polarization beam splitter 30 is configured to move up and down along the first direction X, so that the second integrating sphere 40 can test the polarization degree of the second light beam, and the optical power and the polarization degree of the first light beam emitted by the semiconductor laser chip 10 can be simultaneously tested in the same system, thereby shortening the testing time and improving the testing efficiency. Meanwhile, the spectrometer 50 is connected with the first integrating sphere 20 to realize the spectrum test of the first light beam, so that the optical power, the polarization degree and the spectrum of the semiconductor laser chip 10 can be tested in the same test system 1, the function of the test system 1 is more comprehensive, and the use experience of a user is improved.
In order to better realize the test of the semiconductor laser chip 10, the present application further provides a method for testing a semiconductor laser applied to the test system 1, and fig. 2 is a schematic flow chart of an embodiment of the test method of the present application. As shown in fig. 2, the test method comprises the following steps:
s11: the first light beam of the semiconductor laser is received by the first integrating sphere 20, and the optical power of the first light beam is detected.
Specifically, a first light beam generated by the semiconductor laser chip 10 enters a first accommodating cavity of the first integrating sphere 20, and a first photoelectric tester in the first accommodating cavity tests the first light beam to obtain the optical power of the first light beam.
S12: the second beam is received by the polarizing beam splitter 30 such that the polarizing beam splitter emits a third beam.
Specifically, the first integrating sphere 20 has a through hole 21, the second light beam can exit through the through hole 21, and the polarization beam splitter 30 can receive the second light beam, separate the second light beam according to the polarization direction, and emit a third light beam.
S13: the second and third light beams are received by the second integrating sphere 40 and the degree of polarization of the second light beam is tested.
Specifically, fig. 3 is a schematic flowchart of an embodiment of step S13 of the testing method shown in fig. 2. As shown in fig. 3, step S13 includes the steps of:
s131: a first relative power of the third beam is taken by the second integrating sphere 40 before the polarizing beam splitter 30 is moved.
Specifically, the polarization beam splitter 30 is located in the optical axis direction of the second light beam transmitted from the through hole 21 before moving, that is, the second light beam can reach the second integrating sphere 40 only after passing through the polarization beam splitter 30, the polarization beam splitter 30 receives the second light beam and generates a third light beam to be emitted, the third light beam enters the second accommodating cavity of the second integrating sphere 40, and the second photodetector in the second accommodating cavity tests the first relative power of the third light beam.
S132: after the polarization beam splitter 30 is moved, the second light beam directly transmitted by the first integrating sphere 20 is received through the second integrating sphere 40, and the second relative power of the second light beam is obtained through the second integrating sphere 40.
Specifically, after the polarization beam splitter 30 moves, the second light beam is located outside the optical axis direction of the second light beam transmitted by the through hole 21, that is, the second light beam can reach the second integrating sphere 40 without passing through the polarization beam splitter 30, at this time, the second light beam enters the second accommodating cavity of the second integrating sphere 40, and the second photodetector in the second accommodating cavity tests the second relative power of the second light beam.
S133: and calculating the polarization degree of the second light beam based on the first relative power and the second relative power.
Specifically, the controller receives the first relative power and the second relative power transmitted by the second integrating sphere 40, and obtains the polarization degree of the second light beam by the percentage of the first relative power in the second relative power, and since the device only intercepts part of the first light beam when the first light beam passes through the first integrating sphere 20, the through hole 21 and the second integrating sphere 40, and does not change the information carried in the first light beam, the polarization degree of the second light beam measured in the second integrating sphere 40 is the polarization degree of the first light beam generated by the semiconductor laser chip 10 in one polarization direction, that is, the polarization degree of the first light beam generated by the semiconductor laser chip 10 is obtained.
In summary, the semiconductor laser chip 10 generates a first light beam, which enters the first accommodating cavity of the first integrating sphere 20, and the optical power of the first light beam is tested therein; then, the light beam is emitted through the through hole 21, a third light beam is generated through the polarization beam splitter 30, the third light beam enters the second integrating sphere 40, the first relative power of the third light beam is tested, then, the polarization beam splitter 30 is moved away, the second light beam passing through the through hole 21 directly enters the second integrating sphere 40, the second relative power of the second light beam is tested and obtained, and the controller obtains the polarization degree of the second light beam based on the first relative power and the second relative power; by applying the testing method, the optical power and the polarization degree of the semiconductor laser are tested in the same testing system 1, the testing time is shortened, the testing efficiency is improved, and the use experience of a user is improved.
Is different from the prior art: in the application, a first integrating sphere 20 is arranged in front of a semiconductor laser chip 10 and used for testing the optical power of the semiconductor laser chip 10; a through hole 21 is formed in the first integrating sphere 20, and a polarization beam splitter 30 capable of moving along the first direction X is disposed behind the through hole 21, so that the first relative power and the second relative power can be measured in the second integrating sphere 40, and then the polarization degree of the semiconductor laser chip 10 is obtained by the controller. The method and the device have the advantages that two important indexes of the optical power and the polarization degree of the semiconductor laser are measured in the same test system, the cost is reduced, the test time is shortened, and the test efficiency is improved. Meanwhile, the spectrometer 50 can be connected to the first integrating sphere 20 to test the spectrum of the semiconductor laser chip 10, so that the function of the test system 1 is more comprehensive, and the use experience of a user is improved.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.
Claims (12)
1. A test system for a semiconductor laser, the semiconductor laser comprising a semiconductor laser chip, the test system comprising:
the center of a circle of the first integrating sphere is positioned on the optical axis of a first light beam generated by the semiconductor laser chip, the first integrating sphere is provided with a first accommodating cavity, the first accommodating cavity is used for receiving the first light beam and detecting the optical power of the first light beam, and one side, away from the semiconductor laser chip, of the first integrating sphere is provided with a through hole;
the polarization beam splitter is arranged on one side, away from the semiconductor laser chip, of the first integrating sphere, and the first integrating sphere transmits part of the first light beam to the polarization beam splitter through the through hole;
the second integrating sphere is arranged on one side, far away from the first integrating sphere, of the polarization beam splitter and provided with a second accommodating cavity, and the second accommodating cavity is used for receiving the second light beam emitted by the through hole and the third light beam emitted by the polarization beam splitter and further testing the polarization degree of the second light beam.
2. The test system of claim 1, wherein the polarizing beam splitter is moved in a direction perpendicular to an optical axis of the second light beam transmitted out of the through hole.
3. The test system of claim 2, wherein the second integrating sphere obtains a first relative power of a third beam passing through the polarizing beam splitter before the polarizing beam splitter moves; and the second integrating sphere obtains second relative power of a second light beam directly transmitted by the through hole after the polarization beam splitter moves.
4. The test system of claim 3, comprising a controller coupled to the second integrating sphere for deriving the degree of polarization of the second light beam based on the first relative power and the second relative power.
5. The test system of claim 3, comprising a guide rail extending in a direction perpendicular to the optical axis of the second light beam, wherein the polarization beam splitter is disposed on the guide rail, and a driving assembly for driving the guide rail to move the polarization beam splitter along the extending direction of the guide rail.
6. The test system of any one of claims 1-5, wherein the first integrating sphere is provided with a fiber optic output interface.
7. The test system of claim 6, comprising an optical fiber and a spectrometer connected to the fiber output interface through the optical fiber for performing a spectral test on the first light beam.
8. The test system of any one of claims 1-5, further comprising a heat dissipation assembly, the semiconductor laser chip being disposed on the heat dissipation assembly, the heat dissipation assembly being configured to dissipate heat from the semiconductor laser chip.
9. The test system of claim 8, wherein the heat dissipation assembly comprises a heat dissipation plate, a refrigeration sheet and a water cooling module which are sequentially stacked, and the semiconductor laser chip is arranged on the heat dissipation plate.
10. The testing system of any one of claims 1-5, wherein the first integrating sphere is a large integrating sphere and the second integrating sphere is a small integrating sphere, the testing system comprising a first photodetector and a second photodetector, the first photodetector disposed within the first receiving cavity and the second photodetector disposed within the second receiving cavity.
11. A method for testing a semiconductor laser, applied to the test system of claims 1-10, comprising:
receiving a first light beam of the semiconductor laser chip through the first integrating sphere and detecting the optical power of the first light beam;
receiving the second light beam by the polarizing beam splitter to cause the polarizing beam splitter to emit the third light beam;
and receiving the second light beam and the third light beam through the second integrating sphere, and testing the polarization degree of the second light beam.
12. The method of claim 11, wherein the step of receiving the second and third light beams by the second integrating sphere and testing the degree of polarization of the second light beam comprises:
before the polarization beam splitter moves, acquiring first relative power of the third light beam through the second integrating sphere;
after the polarization beam splitter moves, receiving a second light beam directly transmitted by the first integrating sphere through the second integrating sphere, and acquiring second relative power of the second light beam through the second integrating sphere;
and calculating the polarization degree of the second light beam based on the first relative power and the second relative power.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116222977A (en) * | 2023-02-24 | 2023-06-06 | 重庆微敏科技有限公司 | Optical power testing and screening device for semiconductor light-emitting chip assembly |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN116222977A (en) * | 2023-02-24 | 2023-06-06 | 重庆微敏科技有限公司 | Optical power testing and screening device for semiconductor light-emitting chip assembly |
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