CN115497821A - 一种基于柔性载板的SiC切割工艺 - Google Patents

一种基于柔性载板的SiC切割工艺 Download PDF

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CN115497821A
CN115497821A CN202211209764.2A CN202211209764A CN115497821A CN 115497821 A CN115497821 A CN 115497821A CN 202211209764 A CN202211209764 A CN 202211209764A CN 115497821 A CN115497821 A CN 115497821A
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严立巍
朱亦峰
刘文杰
马晴
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Zhejiang Tongxinqi Technology Co ltd
Zhongsheng Kunpeng Optoelectronic Semiconductor Co ltd
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Zhongsheng Kunpeng Optoelectronic Semiconductor Co ltd
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    • H01—ELECTRIC ELEMENTS
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H01L21/3043—Making grooves, e.g. cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
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    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/36—Removing material
    • B23K26/40—Removing material taking account of the properties of the material involved
    • B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
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    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
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    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68354—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting

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Abstract

本发明涉及晶圆加工技术领域，具体的是一种基于柔性载板的SiC切割工艺，本发明包括S1、完成SiC正面金属制程前的工艺与背面的减薄、离子植入；S2、将SiC正面键合在柔性玻璃载板上；S3、对晶圆采用激光隐形切割，并进行扩膜裂片；S4、将柔性玻璃载板键合在玻璃载板上；S5、溅镀金属膜；S6、使用uv光照，使得晶粒从柔性玻璃载板上解键脱落；本发明通过用柔性载板是因为做背面的金属溅镀时需要高温，到那时切割模框不能承受高温；要能够扩膜裂片又要能承受高温，柔性载板就是最好的选择，通过在晶圆的表面切割出上窄下宽的隐形切割面，这样在溅镀的时候，金属在经过断裂面后，就会掉入底部较宽的断裂面内，就不会与两边的晶粒相连，直接在晶粒的表面镀膜。

Description

一种基于柔性载板的SiC切割工艺
技术领域
本发明涉及晶圆加工技术领域，具体的是一种基于柔性载板的SiC切割工艺。
背景技术
碳化硅晶片的主要应用领域有LED固体照明和高频率器件。该材料具有高出传统硅数倍的禁带、漂移速度、击穿电压、热导率、耐高温等优良特性，在高温、高压、高频、大功率、光电、抗辐射、微波性等电子应用领域和航天、军工、核能等极端环境应用有着不可替代的优势。
目前在对碳化硅晶圆进行加工时，由于碳化硅比较坚硬，但是又比较脆，切割难度比较大，现在的技术是把正面和背面的工艺全部做完以后再用激光打断金属，再对晶圆进行隐形切割，然后转移到切割模框上进行扩膜裂片断开晶粒。这样的工艺步骤有个难点，那就是做完背面的金属以后，用激光去切割金属时，切割道对准技术比较困难，难以做到精准切割。
发明内容
本发明的目的在于提供一种基于柔性载板的SiC切割工艺，以解决上述背景技术中提出的问题。
本发明的目的可以通过以下技术方案实现：
一种基于柔性载板的SiC切割工艺，包括以下步骤：
S1、完成SiC正面金属制程前的工艺与背面的减薄、离子植入；
S2、采用能够耐受200℃以上的粘着剂，将SiC正面键合在柔性玻璃载板上；
S3、对晶圆采用激光隐形切割，形成上窄下宽的隐形切割面，并沿着隐形切割面进行扩膜裂片断开形成晶粒；
S4、将柔性玻璃载板键合在玻璃载板上；
S5、采用溅镀的方式，在SiC晶圆的背面附金属膜；
S6、将SiC晶圆的背面放置在切割模框上，采用uv光照，使得晶粒从柔性玻璃载板上解键脱落。
进一步的，所述S1中SiC正面金属制程前的工艺包括沟槽、ILD和接触孔工艺。
进一步的，所述S3中上窄下宽的隐形切割面为靠近背面的晶圆表面形成窄隐形切割面，靠近正面的晶圆表面形成宽隐形切割面，且窄隐形切割面与宽隐形切割面处于同一竖直面内。
进一步的，所述S4具体为通过将柔性玻璃载板放置于玻璃载板上，然后通过聚酰亚胺对柔性玻璃载板进行封边。
进一步的，所述S5中金属膜包括Ti、Ni与Ag。
本发明的有益效果：
1、本发明用柔性载板是因为做背面的金属溅镀时需要高温，到那时切割模框不能承受高温；要能够扩膜裂片又要能承受高温，柔性载板就是最好的选择；
2、本发明通过在晶圆的表面切割出上窄下宽的隐形切割面，这样在溅镀的时候，金属在经过断裂面后，就会掉入底部较宽的断裂面内，就不会与两边的晶粒相连，从而实现直接在晶粒的表面镀膜。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案，下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍，显而易见地，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图；
图1是本发明工艺步骤S2的成型示意图；
图2是本发明工艺步骤S3的成型示意图；
图3是图2中A处的放大示意图；
图4是本发明工艺步骤S4的成型示意图；
图5是本发明工艺步骤S5的成型示意图；
图6是本发明工艺步骤S6的成型示意图。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
参照图1所示，一种基于柔性载板的SiC切割工艺，包括以下步骤：
S1、完成SiC正面金属制程前的工艺与背面的减薄、离子植入，完成前置准备；其中SiC正面金属制程前的工艺包括沟槽、ILD和接触孔工艺。
S2、采用能够耐受200℃以上的粘着剂，这是因为后面要进行溅镀操作，而溅镀时，温度通常比较高，将SiC正面键合在柔性玻璃载板上，使得SiC晶圆正面向上。
S3、对晶圆采用激光隐形切割，形成上窄下宽的隐形切割面，即靠近背面的晶圆表面形成窄隐形切割面，靠近正面的晶圆表面形成宽隐形切割面，且窄隐形切割面与宽隐形切割面处于同一竖直面内，在柔性玻璃载板的周围还设置有固定把手，可以通过手持固定把手对SiC晶圆进行扩膜裂片，晶圆沿着切割面就会断开形成晶粒，而断开之后的隐形切割面就会形成上窄下宽的断裂面。
S4、将柔性玻璃载板键合在玻璃载板上，具体为将柔性玻璃载板放置于玻璃载板上，然后通过聚酰亚胺对柔性玻璃载板进行封边。
S5、采用溅镀的方式，在SiC晶圆的背面附金属膜，金属膜包括Ti、Ni与Ag。
在对晶圆进行溅镀的时候，会在晶圆的表面形成金属膜，而在经过断裂面时，就会直接掉落下去，而由于下面属于较宽断裂面，就会掉落于较宽断裂面的中心处，并且不会与两侧的晶粒相接触，各个晶粒还是单独分开的，仅通过粘着剂键合在柔性玻璃载板上。
S6、将SiC晶圆的背面放置在切割模框上，采用uv光照，粘着剂光照消除，使得晶粒从柔性玻璃载板上解键脱落，然后直接将玻璃载板连着柔性玻璃载板一起拿掉，直接就形成了一个个单独的晶粒，无需再次进行切割。
以上显示和描述了本发明的基本原理、主要特征和本发明的优点。本行业的技术人员应该了解，本发明不受上述实施例的限制，上述实施例和说明书中描述的只是说明本发明的原理，在不脱离本发明精神和范围的前提下，本发明还会有各种变化和改进，这些变化和改进都落入要求保护的本发明范围内。

Claims (5)

1.一种基于柔性载板的SiC切割工艺，其特征在于，包括以下步骤：
S1、完成SiC正面金属制程前的工艺与背面的减薄、离子植入；
S2、采用能够耐受200℃以上的粘着剂，将SiC正面键合在柔性玻璃载板上；
S3、对晶圆采用激光隐形切割，形成上窄下宽的隐形切割面，并沿着隐形切割面进行扩膜裂片断开形成晶粒；
S4、将柔性玻璃载板键合在玻璃载板上；
S5、采用溅镀的方式，在SiC晶圆的背面附金属膜；
S6、将SiC晶圆的背面放置在切割模框上，采用uv光照，使得晶粒从柔性玻璃载板上解键脱落。
2.根据权利要求1所述的基于柔性载板的SiC切割工艺，其特征在于，所述S1中SiC正面金属制程前的工艺包括沟槽、ILD和接触孔工艺。
3.根据权利要求1所述的基于柔性载板的SiC切割工艺，其特征在于，所述S3中上窄下宽的隐形切割面为靠近背面的晶圆表面形成窄隐形切割面，靠近正面的晶圆表面形成宽隐形切割面，且窄隐形切割面与宽隐形切割面处于同一竖直面内。
4.根据权利要求1所述的基于柔性载板的SiC切割工艺，其特征在于，所述S4具体为通过将柔性玻璃载板放置于玻璃载板上，然后通过聚酰亚胺对柔性玻璃载板进行封边。
5.根据权利要求1所述的基于柔性载板的SiC切割工艺，其特征在于，所述S5中金属膜包括Ti、Ni与Ag。
CN202211209764.2A 2022-09-30 2022-09-30 一种基于柔性载板的SiC切割工艺 Pending CN115497821A (zh)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115922109A (zh) * 2023-01-05 2023-04-07 成都功成半导体有限公司 一种晶圆背面激光切割方法及晶圆

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN115922109A (zh) * 2023-01-05 2023-04-07 成都功成半导体有限公司 一种晶圆背面激光切割方法及晶圆

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