CN115483203A - MOS structure for automobile starting, manufacturing method and automobile starting system - Google Patents

Abstract

The application relates to an MOS structure, a manufacturing method and an automobile starting system for automobile starting, which comprise a base island, a first MOS tube and a second MOS tube which are arranged on the base island, and a plastic package body which seals the base island, the first MOS tube and the second MOS tube, wherein the grid electrode of the first MOS tube is connected with the grid electrode of the second MOS tube, and the drain electrode of the first MOS tube is connected with the drain electrode of the second MOS tube. The application has the effects of saving space, reducing cost and reducing internal resistance.

Description

MOS structure, manufacturing method and vehicle starting system for automobile starting

technical field

The present application relates to the technical field of automobile emergency start, in particular to a MOS structure, a manufacturing method and an automobile start system for automobile start.

Background technique

Cars bring great convenience to people's travel, but the car cannot be started under certain special circumstances, which brings great troubles to users. For this reason, the emergency start power supply is used, and the switch tube of the emergency start power supply is generally used Large relay or MOS tube.

At present, in practical applications, each MOS is usually packaged separately and then connected to the pins, and then two packaged MOS switches are arranged in series back to back on the PCB, but the products produced by this kind of production are large in size and have large internal resistance. , and the cost is relatively high, which needs to be improved.

Contents of the invention

In order to improve the problems of large product volume and high cost, the application provides a MOS structure, a manufacturing method and a vehicle starting system for automobile starting.

In the first aspect, the application provides a MOS structure for starting a car, and adopts the following technical solution:

A MOS structure for starting a car, including a base island, a first MOS transistor and a second MOS transistor disposed on the base island, and sealing the base island, the first MOS transistor and the second MOS transistor The gate of the first MOS transistor is connected to the gate of the second MOS transistor, and the drain of the first MOS transistor is connected to the drain of the second MOS transistor.

By adopting the above technical solution, by packaging two MOS tubes together, two gates are connected, and two drains are connected, there is no need to package a MOS tube separately, so that the packaged MOS can be directly applied to the car starting system , does not require back-to-back soldering together, saving space and packaging costs.

Optionally, the gate of the first MOS transistor is connected to the gate of the second MOS transistor, and the drain of the first MOS transistor is connected to the drain of the second MOS transistor through connecting wires. .

By adopting the above technical solution, the gates of the two MOS transistors on the base island are connected through the connecting wire, and the drains of the two MOS transistors are connected through the connecting wire, so that two separate MOS transistors are packaged together.

Optionally, the first MOS transistor includes a first P-type substrate, a first N-type trench, a second N-type trench, a first oxide layer, a first gate metal layer, a first drain extension layer , a first source metal layer and a first insulating layer, one side of the first P-type substrate is fixed on the base island, and the first N-type trench is opened on the first P-type substrate a side away from the base island to form a first source region, the second N-type trench is opened on a side of the first P-type substrate away from the base island to form a first drain region, the The first oxide layer covers the side of the first P-type substrate away from the base island, the first source metal layer is connected to the first source region, and the first drain extension layer is connected to the The first drain region is connected, the first insulating layer is disposed between the first source metal layer and the first drain extension layer, and the first gate metal layer is disposed on the first insulating layer superior;

The second MOS transistor includes a second P-type substrate, a third N-type trench, a fourth N-type trench, a second oxide layer, a second gate metal layer, a second drain extension layer, and a second source A pole metal layer and a second insulating layer, one side of the second P-type substrate is fixed on the base island, and the third N-type trench is opened on the second P-type substrate away from the base One side of the island to form a second source region, the fourth N-type trench is opened on the side of the second P-type substrate away from the base island to form a second drain region, the second oxide layer Covering the side of the second P-type substrate away from the base island, the second source metal layer is connected to the second source region, and the second drain extension layer is connected to the second drain region connected, the second insulating layer is disposed between the second source metal layer and the second drain extension layer, and the second gate metal layer is disposed on the second insulating layer;

The first drain extension layer is integrally formed with the second drain extension layer.

By adopting the above technical solution, before packaging, the first MOS tube and the second MOS tube are processed into one body, the first drain extension layer is connected to the second drain extension layer, and the two drains can be connected without connecting wires. The poles are connected together to simplify the subsequent packaging process and realize the packaging of two MOSs, so that the packaged MOSs can be directly applied to the car startup.

Optionally, the first gate metal layer and the second gate metal layer are integrally formed.

By adopting the above technical solution, there is no need to use connecting wires to connect the first gate metal layer and the second gate metal layer, which simplifies the packaging steps.

Optionally, both the first insulating layer and the second insulating layer are made of silicon dioxide or borophosphosilicate glass.

By adopting the above technical solution, silicon dioxide or borophosphosilicate glass is used as the insulating layer to effectively isolate the gate and source, and the gate and drain of the MOS transistor.

Optionally, it also includes a first pin, a second pin and a control pin, the source of the first MOS transistor is connected to the first pin, the source of the second MOS transistor is connected to the The second lead pin, the gate of the first MOS transistor is connected to the control pin.

By adopting the above technical solution, two MOS tubes are packaged and three lead pins are drawn out, which reduces the internal resistance and ensures that the car can be started normally.

In the second aspect, the application provides a MOS manufacturing method for starting a car, and adopts the following technical solution:

The MOS manufacturing method used for automobile starting includes sequentially forming a first source region, a first drain region, a second source region and a second drain region on a P-type substrate; depositing an oxide layer on the surface of the P-type substrate patterning the first source region, the first drain region, the second source region and the second drain region on the oxide layer and depositing metal to form a first source metal layer and a first drain region pole extension layer, a second source metal layer and a second drain extension layer, wherein the first drain extension layer and the second drain extension layer are integrally formed; between the first source metal layer and the second drain extension layer Deposit metal on the oxide layer between the first drain extension layer to form a first gate metal layer, and the oxide layer between the second source metal layer and the second drain extension layer Metal is deposited on the layer to form a second gate metal layer, and the first gate metal layer and the second gate metal layer are integrally formed.

By adopting the above technical solution, when patterning the first source region, the first drain region, the second source region and the second drain region on the oxide layer and depositing metal during the MOS forming process, the first drain electrode is extended The plate is formed together with the second drain extension plate, and the first gate metal layer and the second gate metal layer are formed together, that is, the drain of the first MOS transistor and the drain of the second MOS transistor, the first gate metal layer The first layer and the second gate metal layer have been connected during molding, and only need to be packaged later, which reduces internal resistance and saves space.

Optionally, the method further includes: depositing an insulating medium between the first gate metal layer and the oxide layer to form a first insulating layer; An insulating medium is deposited between the layers to form a second insulating layer.

By adopting the above technical solution, the arrangement of the first insulating layer and the second insulating layer isolates the gate and the source, and the gate and the drain of the MOS transistor.

In the third aspect, the application provides a vehicle starting system, adopting the following technical solutions:

The automobile starting system comprises the above-mentioned MOS structure for automobile starting, a power supply module, an automobile starting motor and a control unit, the positive end of the power supply module is electrically connected to the source of the first MOS tube, and the power supply The negative end of the module is electrically connected to the source of the second MOS tube, the automobile starter motor and control unit are connected to the power module, and the control terminals of the automobile starter motor and control unit are connected to the first MOS tube. The gate of the transistor, the automobile starter motor and the control unit are used to control the conduction state of the MOS structure.

By adopting the above technical solution, the conduction state of the MOS structure is controlled by the vehicle starter motor and the control unit, so as to ensure the successful starting of the vehicle and save the occupied space of the MOS structure.

In summary, the present application includes at least the following beneficial technical effects:

1. By packaging two MOS tubes together, two gates are connected and two drains are connected, there is no need to package a MOS tube separately, so that the packaged MOS can be directly applied to the car starting system without back-to-back Solder together, saving space and packaging costs;

2. By connecting two gates and two drains with connecting wires, two separate MOS transistors are packaged together;

3. Before packaging, the first MOS tube and the second MOS tube are processed into one body, the first drain extension layer is connected to the second drain extension layer, and the two drains can be connected together without connecting wires , simplify the subsequent packaging process, and realize the packaging of two MOSs, so that the packaged MOSs can be directly applied to the car startup.

Description of drawings

FIG. 1 is a perspective view of a packaging structure of Embodiment 1 of the present application;

FIG. 2 is a schematic cross-sectional view of the packaging structure of Embodiment 1 of the present application;

Fig. 3 is a perspective view of the packaging structure in Embodiment 2 of the present application;

FIG. 4 is a schematic cross-sectional view of the package structure of FIG. 3;

Fig. 5 is a perspective view of another package structure in Embodiment 2 of the present application;

6 is a schematic cross-sectional view of the package structure of FIG. 5;

Fig. 7 is a schematic diagram of the framework of the vehicle starting system of the present application.

Description of reference numerals: 10, base island; 20, first MOS transistor; 21, first P-type substrate; 22, first N-type trench; 23, second N-type trench; 24, first oxide layer ; 25, the first gate metal layer; 26, the first drain extension layer; 27, the first source metal layer; 28, the first insulating layer; 30, the second MOS tube; 31, the second P-type substrate ; 32, the third N-type trench; 33, the fourth N-type trench; 34, the second oxide layer; 35, the second gate metal layer; 36, the second drain extension layer; 37, the second source Metal layer; 38, second insulating layer; 40, plastic package; 50, first source region; 51, first drain region; 52, second source region; 53, second drain region; 60, connection line; 70, Power module; 80. Automobile starter motor and control unit.

detailed description

In the description of the present application, it should be understood that the terms "first", "second", etc. are used for descriptive purposes only, and cannot be interpreted as indicating or implying relative importance or implicitly indicating the number of indicated technical features . Thus, a feature defined as "first", "second", etc. may expressly or implicitly include one or more of that feature.

Existing automobiles, motorcycles, and ships use lead-acid batteries for starting power, and a few use lithium batteries, but because of cost and safety, lithium batteries have not been widely used. Whether it is a lead-acid battery or a lithium battery, there is a problem of short life. The cycle life of a lead-acid battery is about 300 times, and it is a cycle when it is fully charged. The cycle life of a lithium battery is about 500 times. This is the theoretical life. In practical applications, due to the influence of engine room temperature, etc., the service life will be shorter, and it usually needs to be replaced after two years. In addition, because the existing lead-acid batteries and various lithium batteries are chemical batteries, it is well known that chemical reactions are sensitive to temperature, so when we put our mobile phones in our backpacks in extremely cold areas, they are prone to automatically shut down, and the performance on vehicles and ships is that the performance deteriorates. Unable to start the fire, the emergency starting power supply was produced in response to this sudden situation. The switch tube of the emergency start power supply generally uses a large relay or MOS tube. In practical applications, no matter it is NMOS or PMOS, there will be two parasitic diodes during the manufacturing process. The substrate of NMOS is P-type, and the D pole and S pole are N-type, so the substrate and drain, source Two diodes are naturally formed between them.

In actual MOS production, in order to allow a voltage difference between the substrate and the gate, the substrate and the source are connected, so the diode between the substrate and the source is shorted and ignored. Mainly consider the diode between substrate and drain. In normal use, since the voltage of the drain is always higher than the voltage of the source, the existence of the diode does not affect the use, and the current always flows from the D pole to the S pole, and the current at this time is completely controlled by the G pole. But there is a special thing about starting a car, because the car has a generator. Once the car starts successfully, the generator will generate electricity to charge the battery. At this time, the source is connected to the generator, and its potential is higher than the drain, which is equivalent to The generator charges the emergency start battery. If the MOS tube is not turned off at this time, the current can flow from the S pole to the D pole without damaging the MOS tube. However, the MOS tube must be disconnected after starting, otherwise it will be damaged. It is equivalent to discharge to the outside all the time, short-circuit accidentally, which forms a contradiction. If the MOS tube is not disconnected, it is easy to short-circuit, and the MOS tube will be damaged if it is disconnected. Therefore, in the related art, two MOS switches are connected back-to-back in series, the drains and drains of two identical MOSFETs are connected together, and then the gates are connected together, which is bulky and costly, and because each MOS is separate Connecting the pins after packaging will increase the impedance and affect the normal start of the car. Therefore, the present application provides a MOS structure, a manufacturing method and an automobile starting system for automobile starting, which have the characteristics of saving space and packaging cost.

The present application will be further described in detail in conjunction with accompanying drawings 1 to 7 below.

The embodiment of the present application discloses a MOS structure for starting a car.

Example 1

Referring to Fig. 1 and Fig. 2, the MOS structure used for starting a car includes a base island 10, a first MOS tube 20, a second MOS tube 30 and a plastic package 40, and the first MOS tube 20 and the second MOS tube 30 are fixed on the base island 10, the base island 10, the first MOS transistor 20 and the second MOS transistor 30 are all sealed in the plastic package 40, wherein the gate of the first MOS transistor 20 is connected to the gate of the second MOS transistor 30, and the first MOS transistor The drain of the transistor 20 is connected to the drain of the second MOS transistor 30 . By encapsulating two MOS tubes together and directly applying them to the car starting system, compared with the related art where one MOS tube is packaged separately and then two MOS tubes are welded together back to back, this application saves space and reduces the cost. Correspondingly, the present application is not limited to the connection between the drain of the first MOS transistor 20 and the drain of the second MOS transistor 30 , and the source of the first MOS transistor 20 and the source of the second MOS transistor 30 may also be connected. connect. In addition, in this embodiment, the MOS transistors are not limited to two N-channel MOS transistors. In a modified embodiment, those skilled in the art can also adjust to two P-channel MOS transistors.

The MOS structure that is used for automobile startup also includes first lead pin, second lead pin and control pin, the source electrode of the first MOS tube 20 is connected to the first lead pin, and the source electrode of the second MOS tube 30 is connected to the second lead pin. Pin, the gate of the first MOS transistor 20 is connected to the control pin. Specifically, the first pin and the second pin are used to connect to an external power supply, and the control pin is used to receive a control signal to control the working state of the MOS. However, in the related art, each MOS tube is individually packaged and then connected to pins, resulting in an increase in impedance. However, in the present application, two MOS tubes are packaged and then lead out to three lead pins, thereby reducing the internal resistance. The car starts because the current is very large. For example, in the case of 12V voltage, it needs hundreds of amps to 1,000 amps. The same as I=V/R, when V=12V, to make I reach 1,000, R can only be milliohms Level, slightly larger impedance will not be able to start the car.

In the embodiment of the present application, the model of the first MOS transistor 20 is the same as that of the second MOS transistor 30 , the gate of the first MOS transistor 20 is connected to the gate of the second MOS transistor 30 through a connection line 60 , and the first MOS transistor 30 The drain of the transistor 20 is connected to the drain of the second MOS transistor 30 through a connecting line 60, so that two separate MOS transistors are packaged together. It should be noted that the connection line 60 requires low impedance, and generally a connection line 60 of several milliohms is selected.

The implementation principle of Embodiment 1 is: two separate MOS transistors are packaged together, wherein the gates of the two MOS transistors are connected, the drains of the two MOS transistors are connected or the sources of the two MOS transistors are connected, The packaged MOS can be directly applied to the car starting system, and there is no need to weld two separately packaged MOS back to back, which saves space and packaging costs.

Example 2

Referring to FIG. 3 and FIG. 4 , the difference between this embodiment and Embodiment 1 is that the first MOS transistor 20 and the second MOS transistor 30 are integrally formed, specifically, the first MOS transistor 20 includes a first P-type substrate 21 , the first N-type trench 22, the second N-type trench 23, the first oxide layer 24, the first gate metal layer 25, the first drain extension layer 26, the first source metal layer 27 and the first insulating layer 28, one side of the first P-type substrate 21 is fixed on the base island 10, and the first N-type trench 22 is opened on the side of the first P-type substrate 21 away from the base island 10 to form the first source region 50 , the second N-type trench 23 is opened on the side of the first P-type substrate 21 away from the base island 10 to form the first drain region 51, and the first oxide layer 24 covers the side of the first P-type substrate 21 away from the base island 10 On one side, the first source metal layer 27 is connected to the first source region 50, the first drain extension layer 26 is connected to the first drain region 51, and the first insulating layer 28 is arranged on the first source metal layer 27 and the first Between the drain extension layers 26 , the first gate metal layer 25 is disposed on the first insulating layer 28 .

The second MOS transistor 30 includes a second P-type substrate 31, a third N-type trench 32, a fourth N-type trench 33, a second oxide layer 34, a second gate metal layer 35, and a second drain extension layer. 36. The second source metal layer 37 and the second insulating layer 38, one side of the second P-type substrate 31 is fixed on the base island 10, and the third N-type trench 32 is opened on the second P-type substrate 31 away from One side of the base island 10 to form the second source region 52, the fourth N-type trench 33 is opened on the side of the second P-type substrate 31 away from the base island 10 to form the second drain region 53, the second oxide layer 34 Covering the side of the second P-type substrate 31 away from the base island 10, the second source metal layer 37 is connected to the second source region 52, the second drain extension layer 36 is connected to the second drain region 53, and the second insulating layer 38 is disposed between the second source metal layer 37 and the second drain extension layer 36, and the second gate metal layer 35 is disposed on the second insulating layer 38; the first drain extension layer 26 and the second drain extension Layer 36 is integrally formed.

Correspondingly, referring to FIG. 5 and FIG. 6 , in some embodiments, the first gate metal layer 25 and the second gate metal layer 35 are also integrally formed. There is no need to connect two MOS transistors on the base island 10 to implement two MOS packages, so that the packaged MOS can be directly applied to the car start.

In this embodiment, the materials of the first insulating layer 28 and the second insulating layer 38 are silicon dioxide or borophosphosilicate glass.

Correspondingly, in some embodiments, the first P-type substrate 21 and the second P-type substrate 31 are integrally formed, the first gate metal layer 25 and the second gate metal layer 35, the first drain extension layer 26 It is connected with the second drain extension layer 36 through the connection line 60 .

In some embodiments, the first P-type substrate 21 and the second P-type substrate 31, the first gate metal layer 25 and the second gate metal layer 35 are integrally formed, and the first drain extension layer 26 and the second The two drain extension layers 36 are connected by a connection line 60 .

It should be noted that when the first MOS transistor 20 and the second MOS transistor are integrally formed, only the first source metal layer 27 needs to be connected to the first lead pin through the connection wire 60 during packaging, and the second source metal layer 37 is connected to the second lead pin through the connecting wire 60 , and the integrally formed gate metal layer is connected to the control pin through the connecting wire 60 .

The implementation principle of Embodiment 2 is: when processing the wafer, the first MOS transistor 20 and the second MOS transistor 30 are processed into one body before packaging, so that the first gate metal layer 25 and the second gate metal layer 35 1. The connection between the first drain extension layer 26 and the second drain extension layer 36 does not need to be connected with a connecting wire 60 , which simplifies the operation steps and realizes the packaging of two MOSs, so that the packaged MOSs can be directly applied to the car start.

The embodiment of the present application also discloses a MOS manufacturing method for starting a car.

The MOS manufacturing method used for automobile starting includes: first, etching on the surface of the P-type substrate to form the first N-type trench 22, the second N-type trench 23, the third N-type trench 32 and the fourth N-type trench in sequence. type trench 33, and form the first source region 50, the first drain region 51, the second source region 52 and the second drain region 53 sequentially through the above trench; an oxide layer is deposited on the surface of the P-type substrate, and Align the first source region 50, the first drain region 51, the second source region 52 and the second drain region 53 on the oxide layer for patterned etching and deposit metal to form the first source metal layer 27 and the first drain The extension layer 26 , the second source metal layer 37 and the second drain extension layer 36 , wherein the first drain extension layer 26 and the second drain extension layer 36 are integrally formed.

Metal is deposited on the oxide layer between the first source metal layer 27 and the first drain extension layer 26 to form the first gate metal layer 25, and on the second source metal layer 37 and the second drain extension layer 36 Metal is deposited on the oxide layer between to form the second gate metal layer 35, and the first gate metal layer 25 and the second gate metal layer 35 are integrally formed, so that the drain of the first MOS transistor 20 and the second MOS transistor 30, the drain of the first gate metal layer 25 and the second gate metal layer 35 have been connected during molding, and there is no need to connect two separate MOS transistors through the connection line 60 during subsequent packaging, which reduces internal resistance and saves space.

An insulating medium is deposited between the first gate metal layer 25 and the oxide layer to form the first insulating layer 28, and an insulating medium is deposited between the second gate metal layer 35 and the oxide layer to form the second insulating layer 38; The gate and source, and the gate and drain of the MOS transistor are isolated by setting the first insulating layer 28 and the second insulating layer 38 .

The implementation principle of the MOS manufacturing method used for automobile start-up in the embodiment of the present application is as follows: the first source region 50, the first drain region 51, the second source region 52, and the second drain region 53 are formed on the oxide layer during the MOS forming process. When patterning and depositing metal, the first drain extension plate and the second drain extension plate are formed together, and the first gate metal layer 25 and the second gate metal layer 35 are formed together, that is, the first MOS transistor The drain of the second MOS transistor 30 and the drain of the second MOS transistor 30, the first gate metal layer 25 and the second gate metal layer 35 have been connected during molding, which reduces internal resistance and saves space.

The embodiment of the present application also discloses a vehicle starting system,

With reference to Fig. 7, this system comprises the MOS structure that is used for automobile start in the above embodiment, and power supply module 70 and automobile starter motor and control unit 80, and power supply module 70 includes automobile battery and emergency start battery, and automobile battery is automobile starter motor and the control unit 80 to supply power, the positive terminal of the power module 70 is electrically connected to the source of the first MOS tube 20, the negative terminal of the power module 70 is electrically connected to the source of the second MOS tube 30, and the automobile starter motor is connected to the control unit 80 In the power module 70 , the control end of the starter motor and control unit 80 is connected to the gate of the first MOS transistor 20 , and the starter motor and control unit 80 is used to control the conduction state of the MOS structure.

There is a load connected between the power module 70 and the MOS structure. By connecting the drains and gates of two MOSs of the same type together, the MOS can be effectively protected. The principle of its protection is as follows: Before, the power supply voltage of the emergency start is high, if the control signal is high voltage, the two MOSs are turned on, because the impedance from D to S and S to D is the same when the MOS tube is turned on, so they can be interchanged, and the current flows through the upper tube. From S to D, and then to D to S of the lower tube, the load is powered to start the car. When the car is started, the load starts to generate electricity. If the control signal is still high, the electricity generated by the load is normally charged to the power supply of the emergency starter. If the control signal is low, both MOSs are cut off, and the current can only flow through the parasitic diode. Since the upper tube is connected in reverse, the current cannot flow through, and the MOS tube is effectively protected. Since this application packages two MOS together, the gates and drains of the two MOSs are connected to each other during packaging or MOS fabrication, or the two sources are connected, which can be directly used to start the car later, without Soldering two separate MOS tubes back to back saves space and packaging costs, and reduces internal resistance.

The implementation principle of the automobile starting system in the embodiment of the present application is as follows: the conduction state of the MOS structure is controlled by the automobile starter motor and the control unit 80 to ensure the successful startup of the automobile and save the occupied space of the MOS structure.

All of the above are preferred embodiments of the application, and are not intended to limit the protection scope of the application. Therefore, all equivalent changes made according to the structure, shape, and principle of the application should be covered by the protection scope of the application. Inside.

Claims (9)

1. The MOS structure that is used for automobile startup is characterized in that: comprise base island (10), be arranged on the first MOS tube (20) and the second MOS tube (30) on described base island (10), and sealing The plastic package (40) of the base island (10), the first MOS transistor (20) and the second MOS transistor (30), the gate of the first MOS transistor (20) is connected to the The gate of the second MOS transistor (30), the drain of the first MOS transistor (20) is connected to the drain of the second MOS transistor (30). 2. The MOS structure for starting a car according to claim 1, characterized in that: the gate of the first MOS transistor (20) and the gate of the second MOS transistor (30), the first MOS transistor (30) The drain of a MOS transistor (20) is connected with the drain of the second MOS transistor (30) through a connection line (60). 3. The MOS structure for starting a car according to claim 1, characterized in that: the first MOS transistor (20) comprises a first P-type substrate (21), a first N-type trench (22) , the second N-type trench (23), the first oxide layer (24), the first gate metal layer (25), the first drain extension layer (26), the first source metal layer (27) and the first An insulating layer (28), one side of the first P-type substrate (21) is fixed on the base island (10), and the first N-type trench (22) is opened on the first P-type type substrate (21) away from the side of the base island (10) to form a first source region (50), and the second N-type trench (23) is opened in the first P-type substrate (21 ) away from the base island (10) to form a first drain region (51), the first oxide layer (24) covers the first P-type substrate (21) away from the base island (10 ), the first source metal layer (27) is connected to the first source region (50), and the first drain extension layer (26) is connected to the first drain region (51) , the first insulating layer (28) is disposed between the first source metal layer (27) and the first drain extension layer (26), and the first gate metal layer (25) is disposed on said first insulating layer (28); The second MOS transistor (30) includes a second P-type substrate (31), a third N-type trench (32), a fourth N-type trench (33), a second oxide layer (34), a second Gate metal layer (35), second drain extension layer (36), second source metal layer (37) and second insulating layer (38), one side of the second P-type substrate (31) fixed on the base island (10), the third N-type trench (32) is opened on the side of the second P-type substrate (31) away from the base island (10) to form a second A source region (52), the fourth N-type trench (33) is opened on the side of the second P-type substrate (31) away from the base island (10) to form a second drain region (53) , the second oxide layer (34) covers the side of the second P-type substrate (31) away from the base island (10), the second source metal layer (37) and the second The source region (52) is connected, the second drain extension layer (36) is connected to the second drain region (53), and the second insulating layer (38) is arranged on the second source metal layer ( 37) and the second drain extension layer (36), the second gate metal layer (35) is disposed on the second insulating layer (38); The first drain extension layer (26) is integrally formed with the second drain extension layer (36). 4. The MOS structure for starting a car according to claim 3, characterized in that: the first gate metal layer (25) and the second gate metal layer (35) are integrally formed. 5. The MOS structure for starting a car according to claim 3, characterized in that: the first insulating layer (28) and the second insulating layer (38) are made of silicon dioxide or boron phosphorus Silicon glass. 6. The MOS structure for starting a car according to claim 1, characterized in that: it also includes a first lead pin, a second lead pin and a control pin, the source of the first MOS tube (20) is connected to In the first pin, the source of the second MOS transistor (30) is connected to the second pin, and the gate of the first MOS transistor (20) is connected to the control pin. 7. The method for making MOS for automobile start-up is characterized in that: comprising sequentially forming a first source region (50), a first drain region (51), a second source region (52) and a second source region (52) on a P-type substrate Drain area (53); An oxide layer is deposited on the surface of the P-type substrate, and the first source region (50), the first drain region (51), the second source region (52) and the first source region (52) are aligned on the oxide layer. The second drain region (53) is patterned and metal is deposited to form the first source metal layer (27), the first drain extension layer (26), the second source metal layer (37) and the second drain extension layer (36), wherein the first drain extension layer (26) is integrally formed with the second drain extension layer (36); Metal is deposited on the oxide layer between the first source metal layer (27) and the first drain extension layer (26) to form a first gate metal layer (25), in the first gate metal layer (25). Metal is deposited on the oxide layer between the second source metal layer (37) and the second drain extension layer (36) to form a second gate metal layer (35), and the first gate metal layer (25) integrally formed with the second gate metal layer (35). 8. The MOS manufacturing method for starting a car according to claim 7, characterized in that: the method further comprises: depositing An insulating medium forms a first insulating layer (28); an insulating medium is deposited between the second gate metal layer (35) and the oxide layer to form a second insulating layer (38). 9. Automobile starting system, comprising the MOS structure for automobile starting as claimed in any one of claim 1-6, power supply module (70) and automobile starting motor and control unit (80), described power supply module (70) The positive end of the power module (70) is electrically connected to the source of the first MOS transistor (20), the negative end of the power module (70) is electrically connected to the source of the second MOS transistor (30), and the automobile starter motor and the control unit (80) are connected to the power module (70), the control terminal of the automobile starter motor and the control unit (80) is connected to the gate of the first MOS tube (20), and the automobile starter motor And the control unit (80) is used for controlling the conduction state of the MOS structure.

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