CN115449897A - HVPE production line for batch gallium nitride wafers and using method thereof - Google Patents
HVPE production line for batch gallium nitride wafers and using method thereof Download PDFInfo
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- CN115449897A CN115449897A CN202211042935.7A CN202211042935A CN115449897A CN 115449897 A CN115449897 A CN 115449897A CN 202211042935 A CN202211042935 A CN 202211042935A CN 115449897 A CN115449897 A CN 115449897A
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- 238000002248 hydride vapour-phase epitaxy Methods 0.000 title claims abstract description 49
- 235000012431 wafers Nutrition 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 20
- 238000000034 method Methods 0.000 title claims abstract description 20
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 16
- 239000000758 substrate Substances 0.000 claims abstract description 77
- 230000001360 synchronised effect Effects 0.000 claims abstract description 20
- 239000000523 sample Substances 0.000 claims abstract description 16
- 230000003287 optical effect Effects 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 19
- 238000007789 sealing Methods 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 239000000969 carrier Substances 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 description 7
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 5
- 239000012495 reaction gas Substances 0.000 description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 4
- 229910052733 gallium Inorganic materials 0.000 description 4
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 238000000151 deposition Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 150000004678 hydrides Chemical class 0.000 description 2
- 239000001257 hydrogen Substances 0.000 description 2
- 229910052739 hydrogen Inorganic materials 0.000 description 2
- 229910000041 hydrogen chloride Inorganic materials 0.000 description 2
- IXCSERBJSXMMFS-UHFFFAOYSA-N hydrogen chloride Substances Cl.Cl IXCSERBJSXMMFS-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Inorganic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses an HVPE production line for batch gallium nitride wafers and a using method thereof, wherein the HVPE production line comprises the following steps: a substrate carrier; the sealed conveying track comprises a synchronous belt used for conveying the substrate carrier and a sealed cavity enclosed outside the synchronous belt; the windows are arranged at the top of the closed cavity at intervals; the horizontal bases are positioned above the sealed cavity at intervals and are intersected with the extending direction of the sealed cavity; the plurality of mechanical arms are connected to the bottoms of the plurality of horizontal bases in a sliding manner; the HVPE machines are communicated with one ends, far away from the closed cavity, of the horizontal bases; and the optical probe is positioned at the tail end of the horizontal base and is in signal connection with the corresponding manipulator. The invention has the advantages that the pollution problem in the substrate conveying process is solved through the sealed conveying track, the growth of a plurality of substrates can be completed at one time through the matching of the synchronous belt and the mechanical arm, and the production efficiency is improved.
Description
Technical Field
The invention relates to the field of growing a CaN film by hydride epitaxy (HVPE), in particular to an HVPE production line for batching gallium nitride wafers and a using method thereof.
Background
The main principle of HVPE nitride growth is: the method comprises the following steps of taking metal gallium as a III group gallium source, ammonia gas (NH 3) as a V group nitrogen source, hydrogen chloride (HCl) as a reaction gas, carrying the reaction gas by carrier gas (hydrogen or nitrogen), carrying out a chemical reaction with the metal gallium in the reaction gas by a gallium boat to generate gallium chloride (GaCl), carrying the reaction gas by the carrier gas (hydrogen or nitrogen), reacting the reaction gas with the NH3 above a substrate to generate GaN, and depositing on the substrate, wherein the main chemical reaction comprises the following steps:
2HCl(g)+2Ga(l)＝2GaCl(g)+H2(g)
GaCl(g)+NH3(g)＝GaN(S)+HCl(g)+H2(g)
hydride vapor phase epitaxy equipment is compound growth process equipment and is mainly used for epitaxially growing a layer of thick film or crystal such as GaAs, gaN and the like on the surface of a substrate through hydride gas such as H2, HCl and the like in a high-temperature environment. The existing hydride vapor phase epitaxy equipment is operated by a single substrate one by one, the substrate needs to be manually placed into HVPE for growth, and the substrate is manually taken out after the growth is finished, so that the production efficiency is low.
Chinese utility model patent publication No. CN203007478U discloses multi-cavity step-by-step processing device for vapor phase epitaxy material growth, including one or more process treatment chamber, the process treatment chamber side is equipped with two and more than substep HVPE epitaxial growth chambers, be equipped with one or more than one loading/unloading wafer chamber between process treatment chamber and the substep HVPE epitaxial growth chamber, be equipped with one or more than one linkage transmission structure of transmission effect between process treatment chamber, loading/unloading wafer chamber and the substep HVPE epitaxial growth chamber. The utility model provides a crystal material growth step thermophysics, chemical reaction dynamics and different growth condition deposition rate and reaction chamber shower nozzle velocity of flow control precision match the scheduling problem to high efficiency obtains high-quality GaN substrate in batches, and the device's every reaction chamber internal parameter is different, solves crystal material growth step thermophysics, chemical reaction dynamics and different growth condition deposition rate and reaction chamber shower nozzle velocity of flow control precision match the scheduling problem.
Disclosure of Invention
The invention aims to solve the technical problem that the existing HVPE can not be automatically carried out in batch, and provides an HVPE production line for batch gallium nitride wafers and a using method thereof.
The technical scheme of the invention is as follows: an HVPE production line for bulk gallium nitride wafers, comprising: a substrate carrier; the sealed conveying track comprises a synchronous belt for conveying the substrate carrier and a sealed cavity body enclosed outside the synchronous belt; the windows are arranged at the top of the closed cavity at intervals; the horizontal bases are positioned above the sealed cavity at intervals and are intersected with the extending direction of the sealed cavity; the plurality of mechanical arms are connected to the bottoms of the plurality of horizontal bases in a sliding manner; the HVPE machines are communicated with one ends, far away from the closed cavity, of the horizontal bases; and the optical probe is positioned at the tail end of the horizontal base and is in signal connection with the corresponding manipulator.
The improvement of the proposal is that a plurality of nitrogen nozzles facing the substrate carrier are uniformly distributed in the closed cavity.
The further improvement of the scheme is that the plurality of horizontal bases are internally provided with gate valves.
In the scheme, the periphery of the substrate carrier is provided with positioning holes, and the center of the substrate carrier is provided with a positioning groove.
A further improvement of the scheme is that sealing doors are arranged at two ends of the sealing conveying track.
The use method of the HVPE production line for batch gallium nitride wafers comprises the following steps: placing a plurality of substrates into corresponding substrate carriers, placing the substrate carriers on a synchronous belt, detecting the substrates by an optical probe on a first horizontal base when the first substrate carrier passes through the first horizontal base, sending a starting signal to a mechanical arm, and grabbing and sending the first substrate carrier and the substrates into a first HVPE machine table from a window by the mechanical arm for wafer growth; when the second substrate carrier passes through the second horizontal base, an optical probe on the second horizontal base detects the substrate and sends a starting signal to the mechanical arm, and the mechanical arm grabs and sends the second substrate carrier and the substrate into a second HVPE machine table for wafer growth; and the steps are carried out until the last substrate carrier is grabbed by the mechanical hand and sent to the last HVPE machine for wafer growth, the grown wafer in the substrate carrier is grabbed by the corresponding mechanical hand again and sent to the synchronous belt, and the wafer is received from the tail end of the synchronous belt, so that the wafer growth of the first batch is completed.
The invention has the advantages that the pollution problem in the substrate conveying process is solved through the sealed conveying track, automatic feeding and discharging are realized through the matching of the synchronous belt and the mechanical arm, the growth of a plurality of substrates can be completed at one time, and the production efficiency is improved.
Drawings
FIG. 1 is a schematic view of an HVPE production line for bulk gallium nitride wafers in accordance with the present invention;
FIG. 2 is a schematic view of the sealing conveyor track of FIG. 1;
in the figure, the device comprises a substrate carrier 1, a substrate carrier 11, a positioning hole 12, a positioning groove 2, a synchronous belt 3, a closed cavity 4, a horizontal base 5, a mechanical arm 6, an HVPE machine table 7, a nitrogen nozzle 8, a gate valve 9 and a sealing door.
Detailed Description
The technical solution in the embodiments of the present invention is clearly and completely described below with reference to the accompanying drawings. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments based on the embodiments in the present invention, without any inventive work, will be apparent to those skilled in the art from the following description.
The HVPE internal structure of the invention is the prior art, like the HVPE cavity internal temperature measuring device disclosed by the Chinese utility model patent publication No. CN213148130U, includes: an HVPE cavity and a temperature measuring probe; the method is characterized in that: it still includes: a gate valve mounted at the bottom of the HVPE chamber; the operation cabin is fixedly communicated with the bottom of the door valve; the lifting device is arranged at the bottom of the operation cabin and is used for sequentially passing the temperature measuring probe through the operation cabin and the gate valve and sending the temperature measuring probe into the HVPE cavity; the temperature measuring probe fixing device is fixed at the top of the lifting rod; and the temperature measuring probe is fixed on the temperature measuring probe fixing device.
An HVPE production line for batch production of gallium nitride wafers comprises: a substrate carrier 1; the sealed conveying track comprises a synchronous belt 2 for conveying a substrate carrier and a sealed cavity 3 enclosed outside the synchronous belt; the windows are arranged at the top of the closed cavity at intervals; the horizontal bases 4 are arranged above the sealed cavity at intervals and are intersected with the extending direction of the sealed cavity; the manipulators 5 are connected to the bottoms of the horizontal bases in a sliding manner; the HVPE machines 6 are communicated with one ends of the horizontal bases far away from the closed cavity; and the optical probe is positioned at the tail end of the horizontal base and is in signal connection with the corresponding manipulator.
The closed cavity in the invention is preferably made of transparent material, such as glass or acrylic plate, so that the conveying condition of the substrate carrier can be observed at any time. And sealing doors 9 are arranged at two ends of the sealing conveying track, and when a substrate carrier needs to be put in or taken out, the corresponding sealing doors are opened.
The periphery of the substrate carrier is provided with positioning holes 11, the center of the substrate carrier is provided with a positioning groove 12, the positioning groove is used for bearing a substrate, the positioning holes are used for positioning in HVPE, a telescopic positioning column is arranged in the corresponding HVPE, the positioning column is used for fixing the substrate carrier when extending out, and the substrate carrier can be taken out when retracting.
The sealing conveying track can be designed into a linear type or a square-shaped type, and the square-shaped type is convenient for saving the occupied area.
As a preferred example of the invention, a plurality of nitrogen nozzles 7 facing the substrate carrier are uniformly distributed in the closed cavity, and the nitrogen nozzles can spray nitrogen to the substrate on the closed cavity in the whole conveying process of the substrate carrier, so that the pollution on the substrate can be swept, and the yield of products can be improved. The blown out nitrogen gas can be discharged from the window.
And gate valves 8 are arranged in the horizontal bases, and are closed after the substrate carrier enters the HVPE to isolate the HVPE from the sealed conveying track.
The use method of HVPE production line of batch gallium nitride wafer comprises the following steps: placing a plurality of substrates into corresponding substrate carriers, placing the substrate carriers on a synchronous belt, detecting the substrates by an optical probe on a first horizontal base when the first substrate carrier passes through the first horizontal base, sending a starting signal to a mechanical arm, and grabbing and sending the first substrate carrier and the substrates into a first HVPE machine table from a window by the mechanical arm for wafer growth; when the second substrate carrier passes through the second horizontal base, an optical probe on the second horizontal base detects the substrate and sends a starting signal to the mechanical arm, and the mechanical arm grabs and sends the second substrate carrier and the substrate into a second HVPE machine for wafer growth; and the steps are carried out until the last substrate carrier is grabbed by the mechanical hand and sent to the last HVPE machine for wafer growth, the grown wafer in the substrate carrier is grabbed by the corresponding mechanical hand again and sent to the synchronous belt, and the wafer is received from the tail end of the synchronous belt, so that the wafer growth of the first batch is completed.
Claims (6)
1. HVPE production line of batched gallium nitride wafer, characterized by: the method comprises the following steps: a substrate carrier (1); the sealed conveying track comprises a synchronous belt (2) used for conveying the substrate carrier and a closed cavity (3) enclosed outside the synchronous belt; the windows are arranged at the top of the closed cavity at intervals; the horizontal bases (4) are positioned above the sealed cavity at intervals and are intersected with the extending direction of the sealed cavity; the manipulators (5) are connected to the bottoms of the horizontal bases in a sliding manner; the plurality of HVPE machine tables (6) are communicated with one ends, far away from the closed cavity, of the plurality of horizontal bases; and the optical probe is positioned at the tail end of the horizontal base and is in signal connection with the corresponding manipulator.
2. The HVPE production line for bulk gallium nitride wafers according to claim 1, wherein: and a plurality of nitrogen nozzles (7) facing the substrate carrier are uniformly distributed in the closed cavity.
3. The HVPE production line for bulk gallium nitride wafers according to claim 1, wherein: gate valves (8) are arranged in the horizontal bases.
4. The HVPE production line for bulk gallium nitride wafers according to claim 1, wherein: positioning holes (11) are formed in the periphery of the substrate carrier, and a positioning groove (12) is formed in the center of the substrate carrier.
5. The HVPE production line for bulk gallium nitride wafers according to claim 1, wherein: and sealing doors (9) are arranged at two ends of the sealing conveying track.
6. The use method of HVPE production line for batch gallium nitride wafers according to any one of claims 1-5, wherein: the method comprises the following steps: placing a plurality of substrates into corresponding substrate carriers, placing the substrate carriers on a synchronous belt, detecting the substrates by an optical probe on a first horizontal base when the first substrate carrier passes through the first horizontal base, sending a starting signal to a mechanical arm, and grabbing and sending the first substrate carrier and the substrates into a first HVPE machine table from a window by the mechanical arm for wafer growth; when the second substrate carrier passes through the second horizontal base, an optical probe on the second horizontal base detects the substrate and sends a starting signal to the mechanical arm, and the mechanical arm grabs and sends the second substrate carrier and the substrate into a second HVPE machine table for wafer growth; and the steps are carried out until the last substrate carrier is grabbed by the mechanical hand and sent to the last HVPE machine for wafer growth, the grown wafer in the substrate carrier is grabbed by the corresponding mechanical hand again and sent to the synchronous belt, and the wafer is received from the tail end of the synchronous belt, so that the wafer growth of the first batch is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202211042935.7A CN115449897A (en) | 2022-08-29 | 2022-08-29 | HVPE production line for batch gallium nitride wafers and using method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202211042935.7A CN115449897A (en) | 2022-08-29 | 2022-08-29 | HVPE production line for batch gallium nitride wafers and using method thereof |
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| CN115449897A true CN115449897A (en) | 2022-12-09 |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030013222A1 (en) * | 2001-06-29 | 2003-01-16 | Agnes Trassoudaine | Process for producing an epitaxial layer of gallium nitride by the HVPE method |
| CN102304698A (en) * | 2011-09-08 | 2012-01-04 | 中国科学院半导体研究所 | Device for growing silicon carbide crystal by high-temperature chemical vapor deposition (HTCVD) method |
| JP2012131692A (en) * | 2011-04-28 | 2012-07-12 | Aetech Corp | METHOD AND APPARATUS FOR MANUFACTURING GALLIUM NITRIDE (GaN) SELF-SUPPORTING SUBSTRATE |
| KR101445673B1 (en) * | 2013-04-30 | 2014-10-01 | 주식회사 이엔에프테크놀로지 | Method and Apparatus for growing semiconductor crystal |
-
2022
- 2022-08-29 CN CN202211042935.7A patent/CN115449897A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030013222A1 (en) * | 2001-06-29 | 2003-01-16 | Agnes Trassoudaine | Process for producing an epitaxial layer of gallium nitride by the HVPE method |
| JP2012131692A (en) * | 2011-04-28 | 2012-07-12 | Aetech Corp | METHOD AND APPARATUS FOR MANUFACTURING GALLIUM NITRIDE (GaN) SELF-SUPPORTING SUBSTRATE |
| CN102304698A (en) * | 2011-09-08 | 2012-01-04 | 中国科学院半导体研究所 | Device for growing silicon carbide crystal by high-temperature chemical vapor deposition (HTCVD) method |
| KR101445673B1 (en) * | 2013-04-30 | 2014-10-01 | 주식회사 이엔에프테크놀로지 | Method and Apparatus for growing semiconductor crystal |
Non-Patent Citations (1)
| Title |
|---|
| 兰虎 等主编: "工业机器人基础", 机械工业出版社, pages: 190 - 191 * |
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Application publication date: 20221209 |