CN115440618A - Gas phase etching device and method for efficiently removing edge oxide layer - Google Patents
Gas phase etching device and method for efficiently removing edge oxide layer Download PDFInfo
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- CN115440618A CN115440618A CN202110658367.2A CN202110658367A CN115440618A CN 115440618 A CN115440618 A CN 115440618A CN 202110658367 A CN202110658367 A CN 202110658367A CN 115440618 A CN115440618 A CN 115440618A
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- 238000005530 etching Methods 0.000 title claims abstract description 133
- 238000000034 method Methods 0.000 title claims abstract description 29
- 235000012431 wafers Nutrition 0.000 claims abstract description 75
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 23
- QPJSUIGXIBEQAC-UHFFFAOYSA-N n-(2,4-dichloro-5-propan-2-yloxyphenyl)acetamide Chemical compound CC(C)OC1=CC(NC(C)=O)=C(Cl)C=C1Cl QPJSUIGXIBEQAC-UHFFFAOYSA-N 0.000 claims description 17
- 238000001179 sorption measurement Methods 0.000 claims 1
- 239000012071 phase Substances 0.000 abstract description 14
- 239000007791 liquid phase Substances 0.000 abstract description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 abstract description 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 3
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000007795 chemical reaction product Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 1
- 230000008595 infiltration Effects 0.000 description 1
- 238000001764 infiltration Methods 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention provides a gas phase etching device and a method for efficiently removing an edge oxide layer, which are applied to an EOS (oxide film removal) process of silicon dioxide (SiO 2) at the edge of a wafer. The etching table comprises a base, a column and an etching disk. Wherein the upright posts are fixedly connected with the etching discs, and the centers of the etching discs are provided with vacuum suction holes for adsorbing and fixing the wafers. The vacuum suction holes on each etching disc are communicated with the vacuum interface at the bottom of the middle upright post through an internal pipeline. The gas outlets are uniformly distributed on the base and used for forming stable etching gas flow. The wafer taking/collecting system consists of an automatic arm, an arm upright post, a moving track and an arm base, wherein a vacuum suction hole is formed below the arm, so that the whole basket of wafers can be taken/collected at the same time after the wafers are adsorbed conveniently. The vacuum suction holes of the arms are connected with the vacuum interface of the system through the inner pipeline of the upright post. The arm upright post is driven by the motor system, can walk in the movable track, and can automatically adjust the orientation of the arm, thereby facilitating the operation of taking/placing the film. The wafer basket is used for placing wafers to be operated and wafers after operation. The device and the method improve the defects of liquid phase etching and simultaneously improve the efficiency of gas phase etching.
Description
Technical Field
The invention mainly relates to a process for removing an oxide film (EOS) of silicon dioxide (SiO 2) at the edge of a wafer in the production process of a semiconductor; in particular to a gas phase etching device and a method for efficiently removing an edge oxide layer.
Background
An oxide film removal (EOS) process is used in the manufacturing process of the semiconductor wafer to remove the silicon dioxide (SiO 2) deposition layer at the edge or extending to the polished surface of the wafer, so that an epitaxial layer with good structure and electrical property can be formed in the subsequent epitaxial process. At present, two production processes of film-pasting type liquid phase etching and film-free gas phase etching exist in the industry. In the former method, a protective film is attached to the surface of a wafer, a part to be etched and removed is exposed, and then the wafer is immersed in liquid phase hydrofluoric acid (HF) to remove an edge oxide layer. The condition of EOS etching in the process is influenced by the wetting state of the liquid phase edge. When the operation edge abnormally wets the bad specification wafer, the etching yield is poor. If the soaking condition needs to be improved, parameters such as viscosity, size, pressing force and the like of the protective film need to be optimized again, and the work is quite complicated. The non-film type etching process uses vacuum to adsorb the wafer on the flat disk surface, and then the gas phase HF is introduced to react with the exposed surface to achieve the purpose of etching. However, the gas phase etching process can only be operated by a single chip, and cannot be operated by a whole basket, so that the operation efficiency is low. The device can be effectively compatible with two operation modes, the defect of poor infiltration of the film-pasting type liquid phase etching edge is overcome, meanwhile, the operation of the whole basket of non-film-pasting type gas phase etching can be met, and the etching yield and the PPH can be obviously improved.
Disclosure of Invention
The invention provides a gas phase etching device and a method for efficiently removing an edge oxide layer, wherein the device and the method comprise the following steps: the device consists of an etching gas hood, an etching table, a wafer taking/collecting mechanism and a wafer basket; the etching gas hood is positioned above the etching table and can cover the etching table to form a closed space; the etching table comprises a base, a stand column and an etching disc; the film taking/collecting mechanism consists of a film taking/collecting arm, an arm upright post, a moving track and an arm base, wherein a vacuum suction hole is arranged below the film taking/collecting arm, the vacuum suction hole of each arm is connected with a vacuum interface of the system through an inner pipeline of the upright post, and the arm upright post is driven by a motor system, can walk in the moving track, and can automatically adjust the orientation of the arm to facilitate the film taking/placing operation; the wafer basket is used for placing wafers to be operated and wafers after operation.
In one embodiment of the present invention, the head of the etching gas hood in the apparatus is provided with hydrofluoric acid (HF) gas inlets, the gas inlets are communicated with etching pipelines uniformly distributed in the etching gas hood, and gas outlets are uniformly distributed on the etching pipelines.
In one embodiment of the invention, the upright columns in the etching table of the device are fixedly connected with each etching disc, the center of each etching disc is provided with a vacuum suction hole for sucking and fixing a wafer, and the vacuum suction hole on each etching disc is communicated with the vacuum port at the bottom of the middle upright column through an internal pipeline.
In one embodiment of the invention, the gas outlet holes are uniformly distributed on the base of the etching table in the device and are used for forming stable etching gas flow.
In an embodiment of the invention, vacuum suction holes are arranged below the arms in the wafer taking/collecting mechanism of the device, so that the whole basket wafer can be taken/collected simultaneously after being adsorbed conveniently, and the vacuum suction holes of the arms are connected with a vacuum interface of the system through an inner pipeline of the upright post.
In an embodiment of the present invention, an arm column in the pick-up/pick-up mechanism of the apparatus is driven by a motor system, and can travel in the moving track, and at the same time, the arm direction can be automatically adjusted, so that the pick-up/pick-up operation is facilitated.
Based on the above, the gas phase etching device and the method for efficiently removing the edge oxide layer provided by the embodiment of the invention can be compatible with two etching processes of a film type and a non-film type, thereby not only improving the defects of liquid phase etching, but also improving the gas phase etching efficiency. In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1 is a schematic plan view of the apparatus of the present invention.
The reference numbers illustrate:
101 HF inlet
102. Etching gas hood
103. Etching pipeline
201. Vacuum suction hole
202. Wafer etching disk
203. Etching table column
204. Etching table base
205. Vacuum interface
206 HF air outlet
301. Vacuum suction hole of arm
302. Sheet taking/collecting arm
303. Arm column
304. Moving rail
305. Arm base
401. Wafer with a plurality of chips
402. Wafer basket
Detailed Description
The following describes in detail a specific embodiment of a vapor etching apparatus and a method for removing an edge oxide layer with high efficiency according to the present invention with reference to the accompanying drawings.
Reference will now be made in detail to exemplary embodiments of the invention, examples of which are illustrated in the accompanying drawings. Further, wherever possible, the same reference numbers will be used throughout the drawings and the description to refer to the same or like parts.
The following detailed description of embodiments of the invention refers to the accompanying drawings in which: a gas phase etching apparatus and method for efficiently removing an edge oxide layer as shown in FIG. 1 comprises an etching gas mask 102, an etching stage, a wafer taking/collecting mechanism and a wafer basket 402; the head of the etching gas hood 102 is provided with HF gas inlet holes 101, the HF gas inlet holes 101 are communicated with etching pipelines 103 which are uniformly distributed in the etching gas hood 102, and gas outlet holes are uniformly distributed on the etching pipelines 103. The etching table comprises an etching table base 204, etching table columns 203 and wafer etching discs 202, wherein the etching table columns 203 are fixedly connected with the wafer etching discs 202, and the centers of the wafer etching discs 202 are provided with vacuum suction holes 201 for sucking and fixing wafers. The vacuum suction holes 201 on each wafer etching disk 202 are communicated with a vacuum interface 205 at the bottom of a middle etching platform upright column 203 through internal pipelines, and HF air outlet holes 206 are uniformly distributed on an etching platform base 204 and used for forming stable etching air flow. The film taking/collecting mechanism consists of a film taking/collecting arm 302, an arm upright post 303, a moving track 304 and an arm base 305, wherein a vacuum suction hole 301 is formed below the film taking/collecting arm 302, the vacuum suction hole 301 of each arm 302 is connected with a vacuum interface 205 of the mechanism through an internal pipeline of the upright post 303, the arm upright post 303 is driven by a motor system, can walk in the moving track 304, can automatically adjust the orientation of the arm 302, and is convenient for film taking/placing operation; the wafer basket 402 is used for placing wafers 401 to be processed and processed wafers.
Case description 1: the film-coated wafer 401 is placed on the wafer basket 402 with the oxide film side facing upward, and the wafer pick-up arm 302 moves to a position above the wafer 401, lowers a certain height, and opens the vacuum to take out the wafer 401 from the wafer basket 402. The arm 302 is moved backward by a stroke of 180 degrees to move toward the etching stage base 204, the wafer 401 is transported to the upper side of the etching stage base 305 and released to be evacuated to the outside of the etching working area, and simultaneously the wafer is sucked on the wafer etching plate 202 by vacuum opening. The etching gas hood 102 is lowered to contact with the etching stage base 204, and the HF gas enters from the HF gas inlet 101 to each etching pipeline 103 and passes through the small holes on the etching pipelines 103 to fully fill the etching gas hood 102, thereby achieving a good etching effect. The HF gas outlet 206 in the etching platen base 204 can remove reaction products and residual HF to form a stable etching gas flow. After etching, the etching gas hood 102 is raised to a position outside the etching working area, the wafer taking arm 302 moves to a position above the wafer 401, descends to a certain height and starts vacuum, and the wafer etching disk 202 is taken out. The arm 302 moves backward for a stroke of 180 degrees to move toward the wafer basket 402, and the wafer 401 is transferred to each slot of the wafer basket 402 and vacuum is released for evacuation.
Case description 2: the non-film type wafer 401 is placed on the wafer basket 402 with the film side down, the wafer pick-up arm 302 moves to a position above the wafer 401, lowers a certain height and opens the vacuum, and the wafer 401 is taken out from the wafer basket 402. The arm 302 is moved backward by a stroke of 180 degrees and moves toward the etching stage base 204, the wafer 401 is transported to the upper side of the etching stage base 204, the vacuum is released and the wafer is evacuated to the outside of the etching working area, and simultaneously the wafer etching plate 202 is vacuum-opened to absorb the wafer 401. The etching gas hood 102 is lowered to contact with the etching stage base 204, and the HF gas enters from the HF gas inlet 101 to each etching pipeline 103 and passes through the small holes on the etching pipelines 103 to fully fill the etching gas hood 102, thereby achieving a good etching effect. The HF gas vent 206 in the pedestal of the etching station can remove reaction products and residual HF, resulting in a stable etching gas flow. After etching, the etching gas hood 102 is raised to a position outside the etching working area, the wafer taking arm 302 moves to a position above the wafer 401, descends to a certain height and starts vacuum, and the wafer etching disk 202 is taken out. The arm is rotated 180 degrees to move towards the wafer basket 402 after moving back for a certain stroke, and the wafer 401 is conveyed to each clamping groove of the wafer basket 402 and is evacuated after releasing vacuum.
The gas phase etching device and the method for efficiently removing the edge oxide layer combine the requirements of the prior art, and the device can be compatible with two etching processes of a film type and a non-film type, thereby not only improving the defects of liquid phase etching, but also improving the gas phase etching efficiency.
Claims (6)
1. A gas phase etching device and method for efficiently removing an edge oxide layer are characterized in that: the device consists of an etching gas hood, an etching table, a wafer taking/collecting mechanism and a wafer basket; the etching gas hood is positioned above the etching table and can cover the etching table to form a closed space; the etching table comprises a base, a stand column and an etching disc; the film taking/collecting mechanism consists of a film taking/collecting arm, an arm stand column, a moving track and an arm base, wherein a vacuum suction hole is arranged below the film taking/collecting arm, the vacuum suction hole of each arm is connected with a vacuum interface of the system through an internal pipeline of the stand column, and the arm stand column is driven by a motor system, can walk in the moving track, can automatically adjust the orientation of the arm and is convenient for film taking/placing operation; the wafer basket is used for placing wafers to be operated and wafers after operation.
2. The apparatus and method of claim 1, wherein the etching chamber comprises a plurality of etching chambers, each of the etching chambers including: the head of the etching gas cover in the device is provided with hydrofluoric acid (HF) gas inlet holes which are communicated with etching pipelines uniformly distributed in the etching gas cover, and gas outlet holes are uniformly distributed on the etching pipelines.
3. The apparatus and method as claimed in claim 1, wherein the etching process further comprises: the device is characterized in that the upright columns in the etching platform are fixedly connected with the etching disks, the centers of the etching disks are provided with vacuum suction holes for adsorbing and fixing wafers, and the vacuum suction holes in the etching disks are communicated with the vacuum interface at the bottom of the middle upright column through internal pipelines.
4. The apparatus and method as claimed in claim 1, wherein the etching process further comprises: the base of the etching table in the device is uniformly distributed with air outlets for forming stable etching airflow.
5. The apparatus and method of claim 1, wherein the etching chamber comprises a plurality of etching chambers, each of the etching chambers including: vacuum suction holes are formed below arms in the wafer taking/collecting mechanism of the device, so that the whole basket wafer can be taken/collected conveniently after adsorption, and the vacuum suction holes of the arms are connected with a vacuum interface of the system through an inner pipeline of the upright post.
6. The apparatus and method of claim 1, wherein the etching chamber comprises a plurality of etching chambers, each of the etching chambers including: the arm upright post in the device film taking/collecting mechanism is driven by a motor system, can walk in a moving track, and can automatically adjust the orientation of the arm, thereby being convenient for the film taking/placing operation.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110658367.2A CN115440618A (en) | 2021-06-04 | 2021-06-04 | Gas phase etching device and method for efficiently removing edge oxide layer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110658367.2A CN115440618A (en) | 2021-06-04 | 2021-06-04 | Gas phase etching device and method for efficiently removing edge oxide layer |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN115440618A true CN115440618A (en) | 2022-12-06 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110658367.2A Pending CN115440618A (en) | 2021-06-04 | 2021-06-04 | Gas phase etching device and method for efficiently removing edge oxide layer |
Country Status (1)
| Country | Link |
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| CN (1) | CN115440618A (en) |
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2021
- 2021-06-04 CN CN202110658367.2A patent/CN115440618A/en active Pending
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