CN115407603A

CN115407603A - Photomask and semiconductor structure

Info

Publication number: CN115407603A
Application number: CN202211104743.4A
Authority: CN
Inventors: 刘志拯
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2022-09-09
Filing date: 2022-09-09
Publication date: 2022-11-29

Abstract

The embodiment of the present disclosure provides a photomask and a semiconductor structure, wherein the photomask includes: a plurality of sub-photomasks arranged in a first direction and a second direction; each sub-photomask and the sub-photomasks adjacent to each other along the first direction and the second direction are provided with stitching regions; the number of overlapped layers of the stitching regions among the four sub-photomasks arrayed in the first direction and the second direction is less than or equal to two; the first direction and the second direction are any two intersecting directions in a plane where the sub-photomasks are located.

Description

Photomask and semiconductor structure

Technical Field

The present disclosure relates to the field of semiconductor technology, and relates to but is not limited to a photomask and a semiconductor structure.

Background

Conventional 2.5D integrated circuits integrate memory/logic circuits/chips, etc. in a single package structure for better performance and lower power consumption by using silicon interposer (Interposers) and Through Silicon Vias (TSVs) technologies. In Chip-on-Wafer-on-Substrate (CoWOS) designs, large interposers require stitching of multiple photomasks to extend reticle size limitations. A large photomask in the related art is formed of 4 small photomasks, and a stitched area common between the small photomasks needs to be exposed 4 times during the patterning process, resulting in severe deformation of the pattern located at the stitched area.

Disclosure of Invention

Embodiments of the present disclosure provide a photomask and a semiconductor structure.

In a first aspect, an embodiment of the present disclosure provides a photomask, including: a plurality of sub-photomasks arranged in a first direction and a second direction;

each sub-photomask and the sub-photomasks adjacent to each other along the first direction and the second direction are provided with stitching regions; the number of overlapping layers of the stitching regions among the four sub-photomasks arrayed in the first direction and the second direction is less than or equal to two; the first direction and the second direction are any two intersecting directions in a plane where the sub-photomasks are located.

In some embodiments, the stitching region of each of the sub-photomasks includes a first region extending along the first direction, a second region extending along the second direction, and a third region;

the extension region of the first region and the extension region of the second region comprise an overlap region, the third region being located within the overlap region;

the size of the first area in the second direction is a first preset size; the size of the second area in the first direction is a second preset size; the first preset size and the second preset size are equal or different;

the maximum size of the third area in the first direction is smaller than or equal to the second preset size; the maximum size of the third area in the second direction is smaller than or equal to the first preset size.

In some embodiments, the shape of the third region comprises a rectangle; two adjacent sides of the rectangle are in contact with the first region and the second region, respectively.

In some embodiments, in four sub-photomasks arrayed in the first direction and the second direction, a sum of sizes of the rectangles of two adjacent sub-photomasks in the second direction is the first preset size, and a size of the rectangle of each sub-photomask in the first direction is the second preset size; or,

in the four sub-photomasks arranged in an array along the first direction and the second direction, the sum of the sizes of the rectangles of the two sub-photomasks with the smallest overlapped area in the second direction is the first preset size, and the size of the rectangle of each sub-photomask along the first direction is the second preset size.

In some embodiments, a dimension of the rectangle along the first direction is the second preset dimension, and a dimension of the rectangle along the second direction is a third preset dimension;

the third predetermined size is half of the first predetermined size.

In some embodiments, in four sub-photomasks arrayed in the first direction and the second direction, a sum of sizes of the rectangles of two adjacent sub-photomasks in the first direction is the second preset size, and a size of the rectangle of each sub-photomask in the second direction is the first preset size; or,

in the four sub-photomasks arranged in an array along the first direction and the second direction, the sum of the sizes of the rectangles of the two sub-photomasks with the smallest overlapping area in the first direction is the second preset size, and the size of the rectangle of each sub-photomask along the second direction is the first preset size.

In some embodiments, a dimension of the rectangle along the second direction is the first preset dimension, and a dimension of the rectangle along the first direction is a fourth preset dimension;

the fourth preset size is half of the second preset size.

In some embodiments, the dimension of the rectangle in the first direction and the second direction is half of the second preset dimension and the first preset dimension, respectively.

In some embodiments, the shape of the third region comprises a triangle, at least one side of the triangle being in contact with the first region or the second region.

In some embodiments, the triangle comprises a right triangle; two right-angle sides of the right-angle triangle are respectively contacted with the first area and the second area; the maximum size of the right-angled triangle in the second direction is the first preset size, and the maximum size of the right-angled triangle in the first direction is the second preset size.

In some embodiments, the triangle comprises an isosceles triangle; the base of the isosceles triangle is in contact with the first region or the second region;

the base sides of isosceles triangles of two of the sub-photomasks adjacent along the first direction or the second direction are in contact with the first region and the second region, respectively.

In some embodiments, any two or three of the four sub-photomasks arrayed in the first direction and the second direction do not have the third region, and the shape of the third region of the remaining two or one sub-photomask includes a rectangle;

the size of the rectangle in the first direction is the second preset size, and the size of the rectangle in the second direction is the first preset size.

In some embodiments, among the four sub-photomasks arrayed in the first direction and the second direction, two sub-photomasks adjacent to each other in the first direction or the second direction do not have the third region, and the shapes of the third regions of the remaining two sub-photomasks include a rectangle;

the size of the rectangle along the second direction is the first preset size, and the sum of the sizes of the rectangle in the first direction is equal to the second preset size; or,

the size of the rectangle along the first direction is the second preset size, and the sum of the sizes of the rectangle in the second direction is equal to the first preset size.

In some embodiments, of the four sub-photomasks arrayed in the first direction and the second direction, two sub-photomasks having the smallest overlapping area do not have the third region, and the shape of the third region of the remaining two sub-photomasks includes a right triangle;

two right-angle sides of the right-angle triangle are respectively contacted with the first area and the second area; the maximum size of the right-angled triangle in the second direction is the first preset size, and the maximum size of the right-angled triangle in the first direction is the second preset size.

In a second aspect, embodiments of the present disclosure provide a semiconductor structure, including:

an interposer having a predetermined pattern; and carrying out a photoetching process through the photomask in the embodiment to obtain the preset pattern.

The photomask and the semiconductor structure provided by the embodiment of the disclosure enable the number of overlapping layers of a plurality of sub-photomasks to be less than or equal to two layers by changing the layout of the sub-photomasks in the photomask, so that a common stitching area between the plurality of sub-photomasks only needs to be exposed for 1 time or 2 times in the process of forming patterns, the pattern distortion is reduced, and the patterns formed by the photomask provided by the embodiment of the disclosure are more uniform.

Drawings

In the drawings, which are not necessarily drawn to scale, like reference numerals may describe similar components in different views. Like reference numerals having different letter suffixes may represent different examples of similar components. The drawings illustrate generally, by way of example, but not by way of limitation, various embodiments discussed herein.

Fig. 1 is a schematic structural diagram of a photomask according to an embodiment of the present disclosure;

fig. 2 is a schematic structural diagram of each sub-photomask in fig. 1 according to an embodiment of the disclosure;

FIG. 3 is a schematic diagram of a structure of one of the sub-photomasks of FIG. 1 provided in an embodiment of the disclosure;

fig. 4 to 19 are schematic structural diagrams of different structures of sub-photomasks provided in the embodiment of the present disclosure.

Detailed Description

Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the specific embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.

In the following description, numerous details are set forth in order to provide a more thorough understanding of the present disclosure. It will be apparent, however, to one skilled in the art, that the present disclosure may be practiced without one or more of these specific details. In other instances, well-known features have not been described in order not to obscure the present disclosure; that is, not all features of an actual embodiment are described herein, and well-known functions and structures are not described in detail.

In the drawings, the size of layers, regions, elements, and relative sizes may be exaggerated for clarity. Like reference numerals refer to like elements throughout.

It will be understood that when an element or layer is referred to as being "on" \8230; \8230 ";," - \8230;, "\8230"; "adjacent to," "connected to," or "coupled to" other elements or layers, it can be directly on, adjacent to, connected to, or coupled to the other elements or layers, or intervening elements or layers may be present. In contrast, when an element is referred to as being "directly on," "8230," "over," "with," "8230," "directly adjacent," "directly connected to," or "directly coupled to" other elements or layers, there are no intervening elements or layers present. It will be understood that, although the terms first, second, third, etc. may be used to describe various elements, components, regions, layers and/or sections, these elements, components, regions, layers and/or sections should not be limited by these terms. These terms are only used to distinguish one element, component, region, layer or section from another element, component, region, layer or section. Thus, a first element, component, region, layer or section discussed below could be termed a second element, component, region, layer or section without departing from the teachings of the present disclosure. And the discussion of a second element, component, region, layer or section does not necessarily imply that the first element, component, region, layer or section is necessarily present in the disclosure.

The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the disclosure. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof. As used herein, the term "and/or" includes any and all combinations of the associated listed items.

Before introducing the embodiments of the present disclosure, two directions of the description structure that may be used in the following embodiments are defined, and the two directions may include an X-axis direction and a Y-axis direction. Two directions intersecting each other (e.g., perpendicular to each other) are defined as a first direction and a second direction. In the embodiments of the present disclosure, the first direction and the second direction may be perpendicular to each other, and in other embodiments, the first direction and the second direction may not be perpendicular. In the embodiment of the present disclosure, the first direction is defined as an X-axis direction, and the second direction is defined as a Y-axis direction.

The embodiment of the present disclosure provides a photomask, fig. 1 is a schematic structural diagram of the photomask provided by the embodiment of the present disclosure, and fig. 2 is a schematic structural diagram of each sub-photomask in fig. 1; as shown in fig. 1 and 2, the photomask 10 includes: the plurality of sub-photomasks arranged in the X-axis direction and the Y-axis direction may include, for example, 4 sub-photomasks, which are the sub-photomask 11, the sub-photomask 12, the sub-photomask 13, and the sub-photomask 14, respectively.

In other embodiments, the number of sub-photomasks in photomask 10 may also be 2, 3, 5, 6, or more.

In some embodiments, each sub-photomask has a stitching region with adjacent sub-photomasks along the first direction and along the second direction; the number of overlapping layers of the stitching areas among the four sub-photomasks arrayed in the first direction and the second direction is less than or equal to two.

In addition, in the embodiment of the present disclosure, the number of overlapping layers of the stitching regions between the four sub-photomasks arranged in an array along the first direction and the second direction is less than or equal to two, where: the number of the overlapped layers of the stitching areas among the four sub-photomasks arrayed in the first direction and the second direction is two or one.

With continued reference to fig. 1 and 2, the sub-photomasks adjacent to the sub-photomask 11 along the X-axis direction and the Y-axis direction are the sub-photomask 12 and the sub-photomask 13, respectively, and the sub-photomasks adjacent to the sub-photomask 14 along the X-axis direction and the Y-axis direction are the sub-photomask 13 and the sub-photomask 12, respectively. The stitching region B is formed between the sub-photomasks 11 and 12, the stitching region a is formed between the sub-photomasks 11 and 13, the stitching region D is formed between the sub-photomasks 14 and 13, and the stitching region C is formed between the sub-photomasks 14 and 12. The number of overlapping layers of the sewing area A, the sewing area B, the sewing area C and the sewing area D is two.

In other embodiments, a part of the stitching region B between the sub-photomasks 11 and 12 may overlap twice, and the other part may overlap once, that is, the number of overlapping layers of the stitching region B between the sub-photomasks 11 and 12 may be two layers and one layer. A part of the stitching region C between the sub-photomasks 14 and 12 may overlap twice, and the other part may overlap once, that is, the number of overlapping layers of the stitching region C between the sub-photomasks 14 and 12 may be two layers and one layer.

According to the photomask provided by the embodiment of the disclosure, the number of the overlapped layers of the plurality of sub-photomasks is less than or equal to two by changing the layout of the sub-photomasks in the photomask, so that the common stitching region between the plurality of sub-photomasks only needs to be exposed for 1 time or 2 times in the process of forming a pattern, the pattern distortion is reduced, and the pattern formed by the photomask provided by the embodiment of the disclosure is more uniform.

FIG. 3 is a schematic diagram of a structure of one of the sub-photomasks in FIG. 1 according to an embodiment of the disclosure; as shown in fig. 3, the stitched region of the sub-photomask 11 includes a first region a extending in the X-axis direction, a second region b extending in the Y-axis direction, and a third region e; the extension area of the first area a and the extension area of the second area b include an overlap area E (i.e., an area shown by a dotted line in fig. 3), and the third area E is located within the overlap area E.

In the embodiment of the present disclosure, the structure of each sub-photomask in the photomask is the same as that of the sub-photomask 11 in fig. 3, that is, each sub-photomask includes a first region a, a second region b, and a third region e.

With reference to fig. 3, the dimension of the first area a in the Y-axis direction is a first predetermined dimension d1; the size of the second area b in the X-axis direction is a second preset size d2; the first predetermined size d1 and the second predetermined size d2 may be equal or different.

In the embodiment of the present disclosure, the first predetermined dimension d1 may be 5 to 30 micrometers (μm), for example, 5 μm, 10 μm, or 30 μm. The second predetermined dimension d2 may be 5 to 30 μm, for example 8 μm, 15 μm or 28 μm.

In the embodiment of the present disclosure, a maximum dimension of the third area e in the X-axis direction is less than or equal to the second preset dimension d2, and a maximum dimension of the third area e in the Y-axis direction is less than or equal to the first preset dimension d1. For example, the maximum dimension of the third area e in the X-axis direction is equal to the second preset dimension d2, and the maximum dimension of the third area e in the Y-axis direction is smaller than the first preset dimension d1 (as shown in fig. 3).

In some embodiments, the shapes of the third regions e of the sub-photomasks 11, 12, 13, and 14 may all be rectangular; two adjacent sides of the rectangle are in contact with the first region a and the second region b, respectively.

Fig. 4 to 10 are schematic structural diagrams of different structures of sub-photomasks provided in the embodiment of the present disclosure; the sub-photomasks of different structures will be described in detail with reference to fig. 4 to 10.

As shown in fig. 4, of the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction, two sub-photomasks adjacent in the Y-axis direction are the sub-photomask 11 and the sub-photomask 13, and the sub-photomask 12 and the sub-photomask 14, respectively. The sizes of the third area e of the sub-photomask 11 and the third area e of the sub-photomask 13 in the Y-axis direction are both a third preset size d3, and the third preset size d3 is half of the first preset size d1. Therefore, the sum of the sizes of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 13 adjacent in the Y-axis direction is the first preset size d1. The sizes of the third area e of the sub-photomask 12 and the third area e of the sub-photomask 14 in the Y-axis direction are both a third preset size d3, and the third preset size d3 is half of the first preset size d1. Therefore, the sum of the sizes of the third region e of the sub-photomask 12 and the third region e of the sub-photomask 14 adjacent in the Y-axis direction is the first preset size d1. The dimensions of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the X-axis direction are all the second preset dimension d2.

As shown in fig. 5, of the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction, two sub-photomasks adjacent in the Y-axis direction are the sub-photomask 11 and the sub-photomask 13, and the sub-photomask 12 and the sub-photomask 14, respectively. The dimension of the third area e of the sub-photomask 11 in the Y-axis direction is a first preset dimension d1 of a first preset multiple, and the dimension of the third area e of the sub-photomask 13 in the Y-axis direction is a first preset dimension d1 of a second preset multiple; the sum of the first preset multiple and the second preset multiple is 1, and the first preset multiple is not equal to the second preset multiple. Therefore, the sum of the sizes of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 13 adjacent in the Y-axis direction is the first preset size d1. The dimension of the third area e of the sub-photomask 12 in the Y-axis direction is a first preset dimension d1 of a third preset multiple, and the dimension of the third area e of the sub-photomask 14 in the Y-axis direction is a first preset dimension d1 of a fourth preset multiple; the sum of the third preset multiple and the fourth preset multiple is 1, and the third preset multiple is not equal to the fourth preset multiple. Therefore, the sum of the sizes of the third region e of the sub-photomask 12 and the third region e of the sub-photomask 14 adjacent in the Y-axis direction is the first preset size d1. The dimensions of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the X-axis direction are all the second preset dimension d2.

As shown in fig. 6, of the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction, two sub-photomasks having the smallest overlapping area are the sub-photomask 11 and the sub-photomask 14, and the sub-photomask 12 and the sub-photomask 13, respectively. The dimension of the third area e of the sub-photomask 11 in the Y-axis direction is a first preset dimension d1 of a first preset multiple, and the dimension of the third area e of the sub-photomask 14 in the Y-axis direction is a first preset dimension d1 of a second preset multiple; the sum of the first preset multiple and the second preset multiple is 1, and the first preset multiple is not equal to the second preset multiple. Therefore, the sum of the dimensions of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 14 having the smallest overlapping area in the Y-axis direction is the first preset dimension d1. The dimension of the third area e of the sub-photomask 12 in the Y-axis direction is a first preset dimension d1 of a third preset multiple, and the dimension of the third area e of the sub-photomask 13 in the Y-axis direction is a first preset dimension d1 of a fourth preset multiple; the sum of the third preset multiple and the fourth preset multiple is 1, and the third preset multiple is not equal to the fourth preset multiple. Therefore, the sum of the dimensions of the third region e of the sub-photomask 12 and the third region e of the sub-photomask 13 in the Y-axis direction, which have the smallest overlapping area, is the first preset dimension d1. The dimensions of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the X-axis direction are all the second preset dimension d2.

As shown in fig. 7, of the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction, two sub-photomasks adjacent in the X-axis direction are the sub-photomask 11 and the sub-photomask 12, and the sub-photomask 13 and the sub-photomask 14, respectively. The sizes of the third area e of the sub-photomask 11 and the third area e of the sub-photomask 12 in the X-axis direction are both a fourth preset size d4, and the fourth preset size d4 is half of the second preset size d2. Therefore, the sum of the sizes of the third regions e of the sub-photomasks 11 and 12 adjacent in the X-axis direction is the second preset size d2. The sizes of the third area e of the sub-photo mask 13 and the third area e of the sub-photo mask 14 adjacent to each other in the X-axis direction are both a fourth preset size d4, and the fourth preset size d4 is half of the second preset size d2. Therefore, the sum of the sizes of the third regions e of the sub-photomasks 13 and 14 adjacent in the X-axis direction is the second preset size d2. The dimensions of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the Y-axis direction are all the first preset dimension d1.

As shown in fig. 8, of the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction, two sub-photomasks adjacent in the X-axis direction are the sub-photomask 11 and the sub-photomask 12, and the sub-photomask 13 and the sub-photomask 14, respectively. The dimension of the third area e of the sub-photomask 11 in the X-axis direction is a second preset dimension d2 of the first preset multiple, and the dimension of the sub-photomask 12 in the X-axis direction is a second preset dimension d2 of the second preset multiple; the sum of the first preset multiple and the second preset multiple is 1, and the first preset multiple is not equal to the second preset multiple. Therefore, the sum of the sizes of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 12 adjacent in the X-axis direction is the second preset size d2. The dimension of the third area e of the sub-photomask 13 adjacent to the sub-photomask in the X-axis direction is a second preset dimension d2 of a third preset multiple, and the dimension of the third area e of the sub-photomask 14 in the X-axis direction is a second preset dimension d2 of a fourth preset multiple; the sum of the third preset multiple and the fourth preset multiple is 1, and the third preset multiple is not equal to the fourth preset multiple. Therefore, the sum of the sizes of the third regions e of the sub-photomasks 13 and 14 adjacent in the X-axis direction is the second preset size d2. The dimensions of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the Y-axis direction are all the first preset dimension d1.

As shown in fig. 9, of the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction, two sub-photomasks having the smallest overlapping area are the sub-photomask 11 and the sub-photomask 14, and the sub-photomask 12 and the sub-photomask 13, respectively. The dimension of the third area e of the sub-photomask 11 in the X-axis direction is a second preset dimension d2 of the first preset multiple, and the dimension of the third area e of the sub-photomask 14 in the X-axis direction is a second preset dimension d2 of the second preset multiple; the sum of the first preset multiple and the second preset multiple is 1, and the first preset multiple is not equal to the second preset multiple. Therefore, the sum of the dimensions of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 14 having the smallest overlapping area in the X-axis direction is the second preset dimension d2. The size of the third area e of the sub-photomask 12 in the X-axis direction is a second preset size d2 of a third preset multiple, the size of the third area e of the sub-photomask 13 in the X-axis direction is a second preset size d2 of a fourth preset multiple, wherein the sum of the third preset multiple and the fourth preset multiple is 1, and the third preset multiple is not equal to the fourth preset multiple. Therefore, the sum of the dimensions of the third region e of the sub-photomask 12 and the third region e of the sub-photomask 13 in the X-axis direction, which have the smallest overlapping area, is the second preset dimension d2. The dimensions of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the Y-axis direction are all the first preset dimension d1.

As shown in fig. 10, the four sub-photomasks arranged in an array along the X-axis direction and the Y-axis direction include a sub-photomask 11, a sub-photomask 12, a sub-photomask 13, and a sub-photomask 14, and the third region e of each sub-photomask is rectangular. The dimension of each rectangle along the X-axis direction is half of the second preset dimension d2, and the dimension along the Y-axis direction is half of the first preset dimension d1. Therefore, the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13, and the third region e of the sub-photomask 14 are in contact with each other and do not overlap, or the number of overlapping layers of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13, and the third region e of the sub-photomask 14 is 1.

In some embodiments, the third region e may also be triangular in shape, at least one side of the triangle being in contact with the first region a or the second region b.

Fig. 11 and 12 are schematic structural diagrams of sub-photomasks of different structures provided in an embodiment of the disclosure; the sub-photomasks of different structures will be described in detail with reference to fig. 11 and 12.

In some embodiments, the triangle comprises a right triangle; two right-angle sides of the right-angle triangle are respectively contacted with the first area and the second area; the maximum size of the right triangle in the second direction is a first preset size, and the maximum size of the right triangle in the first direction is a second preset size.

As shown in fig. 11, the four sub-photomasks arranged in an array in the X-axis direction and the Y-axis direction include a sub-photomask 11, a sub-photomask 12, a sub-photomask 13, and a sub-photomask 14. The third area e of the sub-photomask 11, the third area e of the sub-photomask 12, the third area e of the sub-photomask 13 and the third area e of the sub-photomask 14 are all right triangles, and two right-angle sides of each right triangle are respectively in contact with the first area a and the second area b. The cathetus of each right triangle contacting the first area a has a first predetermined dimension d1 and the cathetus of each right triangle contacting the second area b has a second predetermined dimension d2. Therefore, the third region e of the sub-photomask 11 and the third region e of the sub-photomask 14 are in contact with each other and do not overlap; the third region e of the sub-photomask 12 and the third region e of the sub-photomask 13 are in contact with each other and do not overlap.

In some embodiments, the triangle may also be an isosceles triangle, and the base of the isosceles triangle contacts the first area a or the second area b.

As shown in fig. 12, the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction include a sub-photomask 11, a sub-photomask 12, a sub-photomask 13, and a sub-photomask 14. The third area e of the sub-photomask 11, the third area e of the sub-photomask 12, the third area e of the sub-photomask 13 and the third area e of the sub-photomask 14 are isosceles triangles; the base sides of the isosceles triangles of the two adjacent sub-photomasks in the X-axis direction or the Y-axis direction are respectively contacted with the first area a and the second area b. For example, the sub-photomasks 11 and 13 are two sub-photomasks adjacent to each other in the X-axis direction, and the base of an isosceles triangle in the sub-photomask 11 is in contact with the second region b in the sub-photomask 11 and the base of an isosceles triangle in the sub-photomask 13 is in contact with the first region a in the sub-photomask 14. Therefore, the base of the isosceles triangle in the sub-photomask 11 has the second predetermined size d2, and the base of the isosceles triangle in the sub-photomask 13 has the first predetermined size d1. Similarly, it can be obtained that the base of the isosceles triangle in the sub-photo mask 14 has the second predetermined dimension d2, and the base of the isosceles triangle in the sub-photo mask 12 has the first predetermined dimension d1. Therefore, the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 are in contact with each other, and do not overlap, or the number of overlapping layers of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 is 1.

In some embodiments, any one of the four sub-photomasks arrayed in the first and second directions may not have the third region. Fig. 13 and 14 are schematic structural diagrams of different structures of sub-photomasks provided by an embodiment of the present disclosure; the sub-photomasks of different structures will be described in detail with reference to fig. 13 and 14.

As shown in fig. 13, the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction include a sub-photomask 11, a sub-photomask 12, a sub-photomask 13, and a sub-photomask 14. The sub-photomasks 11, 12 and 13 have third areas e, and the third areas e of the sub-photomasks 12 and 13 with the smallest overlapping area are all right-angled triangles in shape; two cathetuses of each right-angled triangle are respectively contacted with the first area a and the second area b, and the cathetuses contacted with the first area a have a first preset size d1, and the cathetuses contacted with the second area b have a second preset size d2. Therefore, the third region e of the sub-photomask 12 and the third region e of the sub-photomask 13 contact each other, and the sum of the dimensions in the Y-axis direction is d1 and the sum of the dimensions in the X-axis direction is d2. The third region e of the sub-photomask 11 is a rectangle having a first predetermined size d1 in the Y-axis direction and a second predetermined size d2 in the X-axis direction. Therefore, in the embodiment of the present disclosure, the number of overlapping layers of the third region e of the sub-photomask 11, the third region e of the sub-photomask 12, and the third region e of the sub-photomask 13 is 2.

As shown in fig. 14, the four sub-photomasks arrayed in the X-axis direction and the Y-axis direction include a sub-photomask 11, a sub-photomask 12, a sub-photomask 13, and a sub-photomask 14. The sub-photomasks 11, 13 and 14 have third regions e, and the third regions e of the sub-photomasks 11, 13 and 14 are rectangular. The dimension of the third area e of the sub-photomask 13 in the X-axis direction is a second preset dimension d2 of the first preset multiple, the dimension of the third area e of the sub-photomask 14 in the X-axis direction is a second preset dimension d2 of the second preset multiple, and the sum of the first preset multiple and the second preset multiple is 1, so that the sum of the dimensions of the third area e of the sub-photomask 13 and the third area e of the sub-photomask 14 adjacent to each other in the X-axis direction is the second preset dimension d2. In addition, the dimensions of the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the Y-axis direction are both the first preset dimension d1. The third region e of the sub-photomask 11 is a rectangle having a first predetermined dimension d1 along the Y-axis direction and a second predetermined dimension d2 along the X-axis direction. Therefore, the number of overlapping layers of the third region e of the sub-photomask 11, the third region e of the sub-photomask 13, and the third region e of the sub-photomask 14 is 2.

In some embodiments, any two of the four sub-photomasks arrayed in the first and second directions may not have the third region. Fig. 15 to 18 are schematic structural diagrams of sub-photomasks with different structures provided in an embodiment of the disclosure; the sub-photomasks of different structures will be described in detail with reference to fig. 15 to 18.

As shown in fig. 15, the four sub-photomasks arranged in an array in the X-axis direction and the Y-axis direction include the sub-photomask 11, the sub-photomask 12, the sub-photomask 13, and the sub-photomask 14. The sub-photomasks 11 and 14 both have third regions e, and the third regions e of the sub-photomasks 11 and the third regions e of the sub-photomasks 14 are rectangles having a first preset dimension d1 in the Y-axis direction and a second preset dimension d2 in the X-axis direction; therefore, the number of layers where the third region e of the sub-photomask 11 and the third region e of the sub-photomask 14 overlap is 2.

As shown in fig. 16, the four sub-photomasks arranged in an array in the X-axis direction and the Y-axis direction include the sub-photomask 11, the sub-photomask 12, the sub-photomask 13, and the sub-photomask 14. The sub-photomasks 13 and 14 adjacent to each other in the X-axis direction have third regions e, and the third regions e of the sub-photomasks 13 and 14 are both rectangular. The dimension of the third area e of the sub-photomask 13 in the X-axis direction is a second preset dimension d2 of the first preset multiple, and the dimension of the third area e of the sub-photomask 14 in the X-axis direction is a second preset dimension d2 of the second preset multiple; and the sum of the first preset multiple and the second preset multiple is 1. Therefore, the sum of the sizes of the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 in the X-axis direction is the second preset size d2; and the third area e of the sub-photomask 13 and the third area e of the sub-photomask 14 both have the first preset dimension d1 in the Y-axis direction. The third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 are in contact with each other, and do not overlap, or the number of overlapping layers of the third region e of the sub-photomask 13 and the third region e of the sub-photomask 14 is 1.

As shown in fig. 17, the four sub-photomasks arranged in an array in the X-axis direction and the Y-axis direction include the sub-photomask 11, the sub-photomask 12, the sub-photomask 13, and the sub-photomask 14. The sub-photomasks 11 and 13 adjacent along the Y-axis have third regions e, and the third regions e of the sub-photomasks 11 and 13 are both rectangular. The dimension of the third area e of the sub-photomask 11 in the Y-axis direction is a first preset dimension d1 of a first preset multiple, and the dimension of the third area e of the sub-photomask 13 in the Y-axis direction is a first preset dimension d1 of a second preset multiple; and the sum of the first preset multiple and the second preset multiple is 1. Therefore, the sum of the sizes of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 13 in the Y-axis direction is the first preset size d1. The third area e of the sub-photo-mask 11 and the third area e of the sub-photo-mask 13 both have a second preset dimension d2 in the X-axis direction. The third region e of the sub-photomask 11 and the third region e of the sub-photomask 13 are in contact with each other, and do not overlap, or the number of overlapping layers of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 13 is 1.

As shown in fig. 18, the four sub-photomasks arranged in an array in the X-axis direction and the Y-axis direction include the sub-photomask 11, the sub-photomask 12, the sub-photomask 13, and the sub-photomask 14. The two sub-photomasks having the smallest overlapping area are the sub-photomask 11 and the sub-photomask 14, and the sub-photomask 13 and the sub-photomask 12, respectively. The third region e of the sub-photomask 11 and the sub-photomask 14 have the third region e, and the shape of the third region e is a right triangle. Two right-angle sides of each right-angle triangle are respectively contacted with the first area a and the second area b, the right-angle side of each right-angle triangle contacted with the first area a has a first preset size d1, and the right-angle side of each right-angle triangle contacted with the second area b has a second preset size d2. The third region e of the sub-photomask 11 and the third region e of the sub-photomask 14 are in contact with each other and do not overlap, or the number of overlapping layers of the third region e of the sub-photomask 11 and the third region e of the sub-photomask 14 is 1.

In some embodiments, any three of the four sub-photomasks arrayed in the first and second directions may not have the third region. Fig. 19 is a schematic structural diagram of a sub-photomask with a different structure according to an embodiment of the disclosure, and the sub-photomask with a different structure is described in detail below with reference to fig. 19.

As shown in fig. 19, the four sub-photomasks arranged in an array in the X-axis direction and the Y-axis direction include the sub-photomask 11, the sub-photomask 12, the sub-photomask 13, and the sub-photomask 14. The sub-photomask 11 has a third area e, and the third area e is a rectangle having a first preset dimension d1 in the Y-axis direction and a second preset dimension d2 in the X-axis direction.

When the number of overlapping layers of the third region of the sub-photomask 11, the third region of the sub-photomask 12, the third region of the sub-photomask 13, and the third region of the sub-photomask 14 is 1 layer or 2 layers, the shape of the third region may be other realizable patterns, which is not limited in the present disclosure.

In addition, when the number of overlapping layers of the third region of the sub-photomask 11, the third region of the sub-photomask 12, the third region of the sub-photomask 13 and the third region of the sub-photomask 14 is 1 layer or 2 layers, the collocation of photomasks with any different structures is within the protection scope of the present disclosure.

In addition, an embodiment of the present disclosure further provides a semiconductor structure, including: an interposer having a predetermined pattern, wherein the predetermined pattern is obtained by performing a photolithography process on the photomask in the above embodiment.

In an embodiment of the present disclosure, the photomask includes a plurality of sub-photomasks. The sub-photomasks are similar to those in the above embodiments, and are not described herein again.

The preset pattern in the embodiment of the disclosure is obtained by sequentially exposing a plurality of sub-photomasks, and the layout of the sub-photomasks in the photomask is changed, so that the number of overlapping layers of the plurality of sub-photomasks is less than or equal to two, and therefore, in the process of forming the pattern, the common stitching region between the plurality of sub-photomasks only needs to be exposed for 1 time or 2 times in the process of sequentially exposing the plurality of photomasks. Thus, pattern distortion can be reduced.

In the embodiments of the present disclosure, the interposer may include through silicon vias and a multilayer Redistribution Layer (RDL). The multilayer redistribution layer may include 3 to 5 copper layers and 1 aluminum top metal layer.

In an embodiment of the present disclosure, the semiconductor structure further includes: semiconductor chips including logic chips (e.g., a central processing unit, a microcontroller, etc.), memory chips (e.g., dynamic Random Access Memory (DRAM), static Random Access Memory (SRAM)), and the like. In the embodiment of the disclosure, the memory chips and the logic chips are distributed on the interposer side by side (side by side), and the memory chips and the logic chips are electrically connected through a plurality of redistribution layers.

In an embodiment of the present disclosure, the semiconductor structure further includes: a package substrate; the package substrate is electrically connected to the semiconductor die through the through-silicon vias in the interposer.

In the several embodiments provided in this disclosure, it should be understood that the disclosed structures and methods may be implemented in a non-targeted manner. The above-described structural embodiments are merely illustrative, for example, the division of a unit is only one logic function division, and there may be other division ways in actual implementation, such as: multiple units or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. Additionally, the various components shown or discussed are coupled or directly coupled to each other.

The features disclosed in the several method or structure embodiments provided in this disclosure may be combined in any combination to arrive at a new method embodiment or structure embodiment without conflict.

The above are only some embodiments of the disclosure, but the scope of the disclosure is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the disclosure, and shall cover the scope of the disclosure. Therefore, the protection scope of the present disclosure shall be subject to the protection scope of the claims.

Claims

1. A photomask, comprising: a plurality of sub-photomasks arranged in a first direction and a second direction;

2. The mask according to claim 1, wherein the stitching region of each of the sub-masks comprises a first region extending along the first direction, a second region extending along the second direction, and a third region;

3. The photomask of claim 2, wherein the shape of the third region comprises a rectangle; two adjacent sides of the rectangle are in contact with the first region and the second region, respectively.

4. The mask according to claim 3, wherein, among four sub-masks arranged in an array along the first direction and the second direction, a sum of sizes of the rectangles of two sub-masks adjacent to each other along the second direction in the second direction is the first predetermined size, and a size of the rectangle of each sub-mask along the first direction is the second predetermined size; or,

5. The mask according to claim 4, wherein the dimension of the rectangle along the first direction is the second predetermined dimension, and the dimension of the rectangle along the second direction is a third predetermined dimension;

the third predetermined size is half of the first predetermined size.

6. The mask according to claim 3, wherein, among four sub-masks arranged in an array along the first direction and the second direction, a sum of sizes of the rectangles of two sub-masks adjacent to each other along the first direction in the first direction is the second preset size, and a size of the rectangle of each sub-mask along the second direction is the first preset size; or,

7. The mask according to claim 6, wherein the dimension of the rectangle along the second direction is the first predetermined dimension, and the dimension of the rectangle along the first direction is a fourth predetermined dimension;

the fourth preset size is half of the second preset size.

8. The photomask of claim 3, wherein the dimension of the rectangle in the first direction and the second direction is half of the second predetermined dimension and the first predetermined dimension, respectively.

9. The photomask of claim 2, wherein the shape of the third region comprises a triangle, at least one side of the triangle being in contact with either the first region or the second region.

10. The photomask of claim 9, wherein the triangle comprises a right triangle; two right-angle sides of the right-angle triangle are respectively contacted with the first area and the second area; the maximum size of the right-angled triangle in the second direction is the first preset size, and the maximum size of the right-angled triangle in the first direction is the second preset size.

11. The photomask of claim 9, wherein the triangle comprises an isosceles triangle; the base of the isosceles triangle is in contact with the first region or the second region;

12. The photomask of claim 2, wherein any two or three of the four sub-photomasks arrayed in the first direction and the second direction do not have the third region, and the shape of the third region of the remaining two or one sub-photomask comprises a rectangle;

13. The photomask according to claim 2, wherein, of the four sub-photomasks arrayed in the first direction and the second direction, two sub-photomasks adjacent to each other in the first direction or the second direction do not have the third region, and the shapes of the third regions of the remaining two sub-photomasks include a rectangle;

14. The photomask according to claim 2, wherein, of the four sub-photomasks arrayed in the first direction and the second direction, two sub-photomasks having the smallest overlapping area do not have the third region, and the shapes of the third regions of the remaining two sub-photomasks include a right triangle;

15. A semiconductor structure, comprising:

an interposer having a predetermined pattern; wherein the predetermined pattern is obtained by performing a photolithography process through the photomask according to any one of claims 1 to 14.