CN115276589A - Bulk acoustic wave resonator, filter, and electronic device - Google Patents
Bulk acoustic wave resonator, filter, and electronic device Download PDFInfo
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- CN115276589A CN115276589A CN202110479872.0A CN202110479872A CN115276589A CN 115276589 A CN115276589 A CN 115276589A CN 202110479872 A CN202110479872 A CN 202110479872A CN 115276589 A CN115276589 A CN 115276589A
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Images
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders; Supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
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- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention relates to a bulk acoustic wave resonator, comprising a substrate; an acoustic mirror; a bottom electrode; a top electrode; and a piezoelectric layer, wherein: the edge of the upper side of the top electrode, which surrounds the effective area of the resonator, is also provided with a conducting layer, and the conducting layer is electrically connected with the top electrode in an electric connection area on the upper side of the top electrode; the resonator further comprises a temperature compensation layer, and the distance between the outer end of the temperature compensation layer and the effective area is not less than-1 mu m in the horizontal direction. The invention also relates to a method of manufacturing a bulk acoustic wave resonator, a filter and an electronic device.
Description
Technical Field
Embodiments of the present invention relate to the field of semiconductors, and in particular, to a bulk acoustic wave resonator, a filter having the resonator, and an electronic device.
Background
With the rapid development of wireless communication technology, the application of miniaturized portable terminal equipment is increasingly widespread, and the demand for high-performance and small-sized radio frequency front-end modules and devices is also increasingly urgent. In recent years, filter devices such as filters and duplexers based on Film Bulk Acoustic Resonators (FBARs) have been increasingly favored in the market. On one hand, the high-power-capacity and high-selectivity antistatic-discharge (ESD) performance is caused by the excellent electrical properties of low insertion loss, steep transition characteristic, high selectivity, high power capacity, high ESD (electrostatic discharge) resistance and the like, and on the other hand, the high-power and high-capacity and high-static-discharge (ESD) performance is caused by the characteristics of small volume and easiness in integration.
However, as the frequency of the resonator is increased, the thicknesses of the top and bottom electrodes of the resonator are gradually decreased, which causes the connection loss of the electrodes to be increased, i.e., the resistance of the electrodes to be increased. The resistance of the electrodes increases, which results in a decrease in the Q-value of the resonator.
In addition, it is desirable to suppress the frequency drift phenomenon of the resonator due to temperature changes.
Disclosure of Invention
The invention is provided for improving the Q value of the resonator and inhibiting the frequency drift phenomenon of the resonator caused by temperature change under the condition that the top electrode of the resonator is thin.
According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator including:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a piezoelectric layer is formed on the substrate,
wherein:
the edge of the upper side of the top electrode, which surrounds the effective area of the resonator, is also provided with a conducting layer, and the conducting layer is electrically connected with the top electrode in an electric connection area on the upper side of the top electrode;
the resonator further comprises a temperature compensation layer, and the distance between the outer end of the temperature compensation layer and the effective area is not less than-1 mu m in the horizontal direction.
Embodiments of the present invention also relate to a filter comprising the above bulk acoustic wave resonator.
Embodiments of the invention also relate to an electronic device comprising a filter or resonator as described above.
Drawings
These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:
FIG. 1A is a schematic top view of a prior art bulk acoustic wave resonator;
FIG. 1B is an exemplary cross-sectional view taken along A-A' of FIG. 1A;
figure 2 is a schematic top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention;
FIGS. 3A-3C are exemplary cross-sectional views taken along line B-B' of FIG. 2 without a void layer or non-conductive dielectric layer disposed in the stacked configuration, with a temperature compensation layer disposed in the bottom electrode, in accordance with one exemplary embodiment of the present invention;
4A-4D are exemplary cross-sectional views taken along B-B' in FIG. 2 with a voided layer or a non-conductive dielectric layer disposed in the laminate structure and a temperature compensating layer disposed in the bottom electrode, in accordance with one exemplary embodiment of the present invention;
FIG. 5 is a graph illustrating experimental data for the structure shown in FIG. 4A;
FIG. 6 is an exemplary cross-sectional view taken along B-B' in FIG. 2 with a temperature compensation layer disposed in the top electrode, in accordance with an exemplary embodiment of the present invention;
FIG. 7 is an exemplary cross-sectional view taken along B-B' in FIG. 2 with a temperature compensated layer disposed in the piezoelectric layer in accordance with an exemplary embodiment of the present invention;
FIG. 8 is an exemplary cross-sectional view taken along B-B' of FIG. 2, in which the acoustic mirror is a Bragg reflector structure, in accordance with one exemplary embodiment of the present invention;
fig. 9 is a schematic top view of a bulk acoustic wave resonator according to yet another exemplary embodiment of the present invention.
Detailed Description
The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention. Some, but not all embodiments of the invention are described. All other embodiments that can be derived by one of ordinary skill in the art from the embodiments given herein are intended to be within the scope of the present invention.
First, the reference numerals in the drawings of the present invention are explained as follows:
101, a substrate, which can be selected from monocrystalline silicon, gallium nitride, gallium arsenide, sapphire, quartz, silicon carbide, diamond and the like, or can be a monocrystalline piezoelectric substrate such as lithium niobate, lithium tantalate, potassium niobate and the like.
102: the bottom electrode (electrode pin or electrode electric connection edge) can be made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the compound of the above metals or the alloy thereof.
103: the acoustic mirror, which may be a cavity, may also employ a bragg reflector (e.g., fig. 8) and other equivalent forms.
104: the piezoelectric layer can be a single crystal piezoelectric material, and can be selected from the following: the material may be polycrystalline piezoelectric material (corresponding to single crystal, non-single crystal material), optionally, polycrystalline aluminum nitride, zinc oxide, PZT, or a rare earth element doped material containing at least one rare earth element, such as scandium (Sc), yttrium (Y), magnesium (Mg), titanium (Ti), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), promethium (Pm), samarium (Sm), europium (Eu), gadolinium (Gd), terbium (Tb), dysprosium (Dy), erbium (Ho), erbium (holmium), thulium (Tm), ytterbium (Yb), lutetium (Lu), or the like.
105: the top electrode (electrode pin or electrode connecting edge) can be made of the same material as the bottom electrode, and the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the compound of the above metals or the alloy thereof, and the like. The top and bottom electrode materials are typically the same, but may be different.
106: the conducting layer is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or their alloys.
107: surface of the top electrodeThe dielectric layer is made of AlN, siN or SiO2、Al2O3。
108: an air gap or a void layer is arranged above the piezoelectric layer, and the air gap or the void layer can also be other non-conductive dielectric layers which play the role of an air gap.
109: bump layer above piezoelectric layer: the material can be selected from molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium or the composition of the above metals or the alloy thereof, etc.
110: and (5) a concave structure.
111: the surface dielectric layer of the conductive layer can be made of AlN, siN or SiO2、Al2O3。
112: the interlayer electrode is made of molybdenum, ruthenium, gold, aluminum, magnesium, tungsten, copper, titanium, iridium, osmium, chromium, or a composite of these metals or an alloy thereof, and in the present invention, the interlayer electrode 112 and the bottom electrode 102 together constitute a bottom electrode in a state where the temperature compensation layer 114 is provided in the bottom electrode. In the case where the temperature compensation layer is not provided in the bottom electrode, there is no provision of the interlayer electrode.
113: and etching the barrier layer. Any material may be used as long as it can block the etching process.
114: temperature compensation layer: the temperature coefficient of the material is required to be opposite to the temperature coefficient of the specifically selected piezoelectric layer material, for example, when the piezoelectric layer is aluminum nitride, the temperature compensation layer should have a positive temperature coefficient. The material can be silicon dioxide (SiO)2) And doped silicon dioxide (e.g., F-doped), polysilicon, boron phosphate glass (BSG), chromium (Cr), or tellurium oxide (TeO (x)), etc.
115: the seed layer can be selected from materials such as aluminum nitride, zinc oxide, PZT and the like, and contains rare earth element doping materials or silicon nitride with certain atomic ratio of the materials.
In the present invention, the connection loss, that is, the connection resistance of the top electrode is reduced by increasing the thickness of the top electrode (providing the conductive layer), and in the present invention, the frequency drift due to the temperature change can be effectively suppressed by providing the temperature compensation layer.
Fig. 1A shows a top view of a conventional resonator structure, and a cross-sectional view of the resonator in fig. 1A taken along direction AA' can be obtained as shown in fig. 1B. Fig. 1B shows a sandwich structure of a general resonator, which includes a substrate 101, a bottom electrode 102, an acoustic mirror 103, a piezoelectric layer 104, a top electrode 105, and a top electrode surface dielectric layer 107. Dielectric layer 107 may also not be provided, as will be appreciated by those skilled in the art.
Fig. 2 is a top view of a bulk acoustic wave resonator according to an exemplary embodiment of the present invention. In fig. 2, a conductive layer 106 is added to the top electrode of the conventional resonator, and the conductive layer 106 is disposed only in the area of the edge portions of the electrically connecting side and the electrically non-connecting side of the top electrode.
Fig. 3A is an exemplary cross-sectional view taken along B-B' in fig. 2, in which no void layer or non-conductive dielectric layer is provided in the stacked structure, but a temperature compensation layer 114 is provided in the bottom electrode, according to an exemplary embodiment of the present invention. Frequency drift caused by temperature change can be effectively suppressed by arranging the temperature compensation layer 114.
As shown in fig. 3A, compared with the conventional resonator shown in fig. 1B, there are a conductive layer 106 and a conductive layer surface dielectric layer 111, and an interlayer electrode 112, an etching barrier layer 113 of a temperature compensation layer 114, and a seed layer 115.
In the present invention, the temperature compensation structure composed of the temperature compensation layer 114, the etching stop layer 113 and the seed layer 115 is only exemplary, and only the temperature compensation layer 114 may be provided, or the temperature compensation layer 114 and the seed layer 115 or the etching stop layer 113 may be provided, all of which are within the protection scope of the present invention.
Fig. 3B is identical to the structure of fig. 3A, but is shown specifically in fig. 3B for certain areas. In fig. 3B, e corresponds to the effective region of the resonator, f corresponds to the overlapping region of the conductive layer 106 on the non-electrically connected side of the top electrode 105 and the electrically connected side of the bottom electrode 102, and g represents the overlapping region on the electrically connected side of the top electrode 105 and the non-electrically connected side of the bottom electrode 102 (corresponding to the "electrically connected region" in the electrical connection between the conductive layer 106 and the top electrode 105 in the electrical connection region on the top electrode side). As shown in fig. 3B, the effective area e of the resonator is the overlapping area between the acoustic mirror 103 and the laminated structure (top electrode, bottom electrode, and piezoelectric layer) in the thickness direction of the resonator between the boundaries of the voids of the suspended structure.
As shown in fig. 3A, at the electrical connection side of the top electrode 105, the distance between the outer edge of the temperature compensation layer 114 and the boundary of the effective area e in the horizontal direction is a; on the non-electrically connected side of the top electrode 105, the outer edge of the temperature compensation layer 114 is at a distance b from the boundary of the effective area e in the horizontal direction. The outer edge of the temperature compensation layer 114 is outside the boundary of the effective area e, the value of a or b is positive, the outer edge of the temperature compensation layer 114 is inside the boundary of the effective area e, and the value of a or b is negative. The values of a and b may be positive, 0 or negative. In one embodiment of the present invention, the distance between the outer end of the temperature compensation layer 114 and the active area in the horizontal direction is not less than-1 μm. When the values of a and b are less than 0 (the step at the edge of the temperature compensation layer 114 is within the effective area e, due to the existence of the step, the crystal orientation of the piezoelectric layer at the step is changed, the film formation quality is poor, the performance of the resonator is reduced, and the Q value of the resonator is decreased, so in an alternative embodiment, as shown in fig. 3A, the values of a and b are greater than 0.
Fig. 3C is identical to the structure of fig. 3A, but is shown exclusively in fig. 3C for certain areas. The dimensions of w1 and w2 shown in fig. 3C are the width dimensions of the suspended portion of the conductive layer 106, where w1 is the width dimension of the suspended portion at the electrically connecting edge of the top electrode and w2 is the width dimension of the suspended portion at the non-electrically connecting edge of the top electrode. The values of w1 and w2 affect the Q-value of the resonator and are related to the specific stack thickness of the resonator and are both larger than the Q-value of a normal resonator. At this time, on the non-electrical connection side of the top electrode, the contact portion of the conductive layer 106 and the top electrode 105, i.e., the corresponding interval of the distance f in fig. 3C, has a different laminated structure from the inner side of the resonator, so as to generate an acoustic impedance mismatched interface, which is beneficial to reflecting the transverse sound waves back to the inside of the resonator at the interface, thereby improving the Q value, and meanwhile, the thickness of the partial top electrode is increased by the conductive layer, thereby being beneficial to reducing the overall resistance of the top electrode; on the other hand, the suspended portion of the conductive layer 106, i.e. the region corresponding to the distance w2 in fig. 3C, is equivalent to a cantilever structure, and it will generate resonance under the excitation of the acoustic wave in the region corresponding to the distance f in fig. 3C, so as to confine a part of the acoustic wave energy leaking to the region f in the suspended structure, further reduce the acoustic wave energy continuously propagating from the region f to the outside of the resonator, and further improve the Q value. At the electrical connection side of the top electrode, the inner side of the conductive layer 106 is a floating structure, i.e. the corresponding region of the distance w1 in fig. 3B, which has a similar function as the region of the distance w 2.
In the g region and the f region in fig. 3B, there is a parasitic capacitance. Because of the parasitic capacitance, the electromechanical coupling coefficient Kt is reduced compared to a normal resonator. In order to reduce parasitic capacitance, the present invention proposes additional embodiments.
Fig. 4A is an exemplary cross-sectional view taken along B-B' in fig. 2, in which a void layer or non-conductive dielectric layer 108 is disposed in the stacked configuration and a temperature compensation layer 114 is disposed in the bottom electrode, according to an exemplary embodiment of the present invention. As described above, the frequency drift caused by the temperature change can be effectively suppressed by providing the temperature compensation layer 114.
As shown in fig. 4A, compared with the conventional resonator shown in fig. 1B, there are a conductive layer 106 and a conductive layer surface dielectric layer 111, and an interlayer electrode 112, an etching barrier layer 113 of a temperature compensation layer 114, and a seed layer 115.
Fig. 4B is identical to the structure of fig. 4A, but is shown exclusively in fig. 4B for certain areas. In fig. 4B, e corresponds to the effective region of the resonator, f corresponds to the overlapping region of the conductive layer 106 on the non-electrically connected side of the top electrode 105 and the electrically connected side of the bottom electrode 102, and g represents the overlapping region on the electrically connected side of the top electrode 105 and the non-electrically connected side of the bottom electrode 102 (corresponding to the "electrically connected region" in the electrical connection between the conductive layer 106 and the top electrode 105 in the electrical connection region on the top electrode side). As shown in fig. 4B, the effective area e of the resonator is an overlapping area of the acoustic mirror 103 with the stacked structure (top electrode, bottom electrode, and piezoelectric layer) and the inner edge of the gap layer 108 in the thickness direction of the resonator between the boundaries of the gap of the suspended structure.
In fig. 4A, the top electrode 105 is provided with a convex structure formed of a convex layer 109 on the piezoelectric layer, and a concave structure 110 as shown in fig. 4A, the top electrode is provided with a void layer 108 on the left side in fig. 4A formed based on a bridge structure at an electrical connection side, and the top electrode is provided with a suspended wing structure defining the void layer 108 on the right side in fig. 4A at a non-electrical connection side. In alternative embodiments, no raised structures and/or no recessed structures may be provided.
As shown in fig. 4A, at the electrical connection side of the top electrode 105, the distance between the outer edge of the temperature compensation layer 114 and the inner edge of the void layer 108 in the horizontal direction is c; at the non-electrically connected side of the top electrode 105, the distance between the outer edge of the temperature compensation layer 114 and the inner edge of the void layer 108 in the horizontal direction is d. In an alternative embodiment, c and d may be equal. The outer edge of the temperature compensation layer 114 is outside the inner edge of the void layer 108, the value of c or d is positive, the outer edge of the temperature compensation layer 114 is inside the inner edge of the void layer 108, and the value of c or d is negative.
Fig. 5 is a graph of experimental data exemplarily illustrating the structure shown in fig. 4A. In fig. 5, the ordinate is the Q value of the resonator, the abscissa is the values of c and d (c and d are set equal in fig. 5), the different data in each set of numbers are the widths of the different convex structures, and the widths of the concave structures are fixed values.
It can be seen that when the values of c and d are less than or equal to-2 μm, the Q value is small, and the variation tendency of the Q value with the width of the bump structure is not obvious, when the values of c and d are equal to-1 μm, the Q value of the resonator is slightly small but acceptable, and still varies periodically with the width of the bump structure, and when the values are greater than 1 μm, the performance of the resonator is not substantially changed, so that it is necessary to define that c and d must be greater than or equal to-1 μm, and further greater than or equal to 1 μm, in order to obtain higher Q values.
Fig. 4C is identical to the structure of fig. 4A, but is shown specifically in fig. 4C for certain areas. The dimensions of w1 and w2 shown in fig. 4C are the width dimensions of the suspended portion of the conductive layer 106, where w1 is the width dimension of the suspended portion at the electrically connected side of the top electrode and w2 is the width dimension of the suspended portion at the non-electrically connected side of the top electrode. The values of w1 and w2 affect the Q-value of the resonator and are related to the specific stack thickness of the resonator and are both larger than the Q-value of a normal resonator. At this time, on the non-electrical connection side of the top electrode, the contact portion of the conductive layer 106 and the top electrode 105, i.e., the corresponding interval of the distance f in fig. 4C, has a different laminated structure from the inner side of the resonator, so as to generate an acoustic impedance mismatched interface, which is beneficial to reflecting the transverse sound waves back to the inside of the resonator at the interface, thereby improving the Q value, and meanwhile, the thickness of the partial top electrode is increased by the conductive layer, thereby being beneficial to reducing the overall resistance of the top electrode; on the other hand, the suspended portion of the conductive layer 106, i.e. the corresponding region of the distance w2 in fig. 4C, is equivalent to a cantilever structure, and it will generate resonance under the excitation of the acoustic wave in the corresponding region of the distance f in fig. 4C, so as to tie a part of the acoustic wave energy leaked to the f region in the suspended structure, further reduce the acoustic wave energy continuously propagating from the f region to the outside of the resonator, and further improve the Q value. On the electrically connecting side of the top electrode, the inner side of the conductive layer 106 is a floating structure, i.e. the corresponding region of the distance w1 in fig. 4B, and the function thereof is similar to the function of the region of the distance w 2.
In one embodiment of the present invention, as shown in fig. 4A-4D, in order to remove the parasitic capacitance in the g region and the f region of fig. 3B and improve the electromechanical coupling coefficient reduced by the parasitic capacitance, a gap layer 108 is provided, where m and k are the distance or region where the gap layer 108 on the left side (top electrode electrically connecting side) in fig. 4D exceeds the region g, and j is the distance or region where the gap layer on the right side (top electrode non-electrically connecting side) in fig. 4D exceeds the region f.
As shown in fig. 4D, in the horizontal direction:
at the electrical connection edge of the top electrode 105, the inner end of the voided layer or non-conductive dielectric layer 108 is flush with or inside the inner end of the electrical connection region g (k-region), and/or the outer end of the voided layer or non-conductive dielectric layer 108 is flush with or outside the non-electrical connection edge of the bottom electrode (formed by the bottom electrodes 102 and 112 together) (m-region); and/or
At the non-electrical connecting side of the top electrode, the inner end of the voided layer or non-conductive dielectric layer 108 is flush with or inside (j-region) the inner end of the electrical connection region f and/or the outer end of the voided layer or non-conductive dielectric layer 108 is flush with or outside the outer end of the electrical connection region f.
In an advantageous embodiment of the invention, the values of m, k and j are not less than 0, further more than 0, and in a further embodiment not less than 1 μm.
In the structure shown in fig. 4B, the void layer 108 at the top-electrode non-electrical-connecting side extends over the entire overlapping region f, and the void layer 108 at the top-electrode electrical-connecting side extends over the entire overlapping region g.
As can be understood, if the void layer 108 is provided at a predetermined position overlapping with the region g or f in fig. 4B in the projection direction parallel to the thickness direction, in this case, any of the above values of m, k, and j may be a negative value, and may also contribute to reducing the parasitic capacitance of the resonator, but the effect is not as significant as the structure shown in fig. 4D.
The arrangement position of the void layer 108 in the thickness direction may be arranged between the piezoelectric layer 104 and the bottom electrode 102 or within the piezoelectric layer 104, in addition to the position shown in fig. 4A, which are all modified embodiments of the present invention and are within the scope of the present invention.
In the present invention, the temperature compensation layer 114 may be disposed in the bottom electrode, or may be disposed in other positions of the stacked structure composed of the bottom electrode, the piezoelectric layer, and the top electrode, for example, in the top electrode as shown in fig. 6, in the piezoelectric layer as shown in fig. 7, or the like.
Furthermore, in order to achieve better technical results, in one embodiment of the present invention, the thickness of the void layer 108 is also specifically required. For example, the thickness of the void layer 108 is selected to be
Within the range of (1), further
Within the scope of, further on
Within the range of (1).
In addition, in the case that the conductive layer 106 and the top electrode 105 are etched at the same step, two separate etching processes are not used for etching the conductive layer and the top electrode, so that the etching does not stop at the top electrode 105, and if the size of w1 or w2 in fig. 3C and 4C is too small, when the top electrode is etched, if the top electrode is broken due to the deviation of the photolithography alignment, the signal cannot be transmitted, and the performance of the resonator is affected. The values of w1 and w2 in fig. 3C and 4C should not be too large, which may cause the suspended portion of the conductive layer 106 to collapse, and the values of w1 and w2 in fig. 3C and 4C may affect the frequency adjustment at a later time. Taken together, in one embodiment of the present invention, the values of w1, w2 in FIGS. 3C and 4C are in the range of 0.2 μm to 20 μm. This value also applies to other exemplary embodiments of the present invention.
As shown in fig. 3B and 4B, f represents the contact width of the conductive layer and the top electrode at the non-electrically connected side of the top electrode. If f is too small, it is preferable that the contact area between the conductive layer 106 and the top electrode 105 at the non-electrically connected edge of the top electrode is small, and the conductive effect is deteriorated. The value of f cannot be too large, and the area occupied by the resonator increases after the value is large. In addition, the increase of the f value is equivalent to the increase of the parallel capacitance between the top electrode and the bottom electrode, and the electromechanical coupling coefficient of the resonator is reduced. In an alternative embodiment of the invention, the value of f is in the range of 0.2 μm to 10 μm.
The value of o in fig. 3C and 4C is the lateral distance from the edge of the acoustic mirror 103 to the beginning of the suspended position of the conductive layer 106 at the top electrode electrical connection side, and in one embodiment of the invention is in the range of 0.2-10 μm.
In the embodiment shown in fig. 9, the conductive portion 106 may be partially broken at the non-electrically connected side of the top electrode, rather than being arranged in a ring. In an alternative embodiment the sum of the lengths of the open positions is not more than 90% of the circumference of the active area of the whole resonator. The solution shown in fig. 9 can also be applied to the embodiments described above with reference to the figures.
It is to be noted that, in the present invention, each numerical range, except when explicitly indicated as not including the end points, can be either the end points or the median of each numerical range, and all fall within the scope of the present invention.
In the present invention, the upper and lower are with respect to the bottom surface of the base of the resonator, and with respect to one component, the side thereof close to the bottom surface is the lower side, and the side thereof far from the bottom surface is the upper side.
In the present invention, the inner and outer are in the horizontal direction or the radial direction with respect to the center of the effective area of the resonator, the side or end of a component close to the center is the inner side or the inner end, and the side or end of the component far from the center is the outer side or the outer end. For a reference position, being inside of the position means being between the position and the center in a horizontal or radial direction, and being outside of the position means being further away from the center in a horizontal or radial direction than the position.
As can be appreciated by those skilled in the art, the bulk acoustic wave resonator according to the present invention may be used to form a filter or an electronic device.
The electronic device comprises but is not limited to intermediate products such as a radio frequency front end and a filtering amplification module, and terminal products such as a mobile phone, WIFI and an unmanned aerial vehicle.
Based on the above, the invention provides the following technical scheme:
1. a bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a piezoelectric layer is formed on the substrate,
wherein:
the edge of the upper side of the top electrode, which surrounds the effective area of the resonator, is also provided with a conducting layer, and the conducting layer is electrically connected with the top electrode in an electric connection area on the upper side of the top electrode;
the resonator further comprises a temperature compensation layer, and the distance between the outer end of the temperature compensation layer and the effective area is not less than-1 μm in the horizontal direction.
2. The resonator of claim 1, wherein:
in the horizontal direction, the outer end of the temperature compensation layer is positioned outside the inner side edge of the electric connection area.
3. The resonator of claim 2, wherein:
and the outer end of the temperature compensation layer is positioned outside the outer edge of the electric connection area in the horizontal direction at the non-electric connection side of the top electrode.
4. The resonator of claim 2, wherein:
at least one part of the bottom surface of the inner end of the conductive layer and the upper surface of the top electrode are provided with a gap or a non-conductive medium material layer, and at least one part of the boundary of the active area is limited by the outer side edge of the gap or the non-conductive medium material layer.
5. The resonator of claim 1, further comprising:
a layer of a void or non-conductive dielectric, at least a part of which is located below said electrical connection area in a projection parallel to the thickness direction of the resonator.
6. The resonator of claim 5, wherein:
and a gap or a non-conductive dielectric material layer is arranged between at least one part of the bottom surface of the inner end of the conductive layer and the upper surface of the top electrode.
7. The resonator of claim 6, wherein:
and a gap is formed between at least one part of the bottom surface of the inner end of the conductive layer and the upper surface of the top electrode to form a suspended structure.
8. The resonator of claim 5, wherein:
the thickness of the void layer or the non-conductive medium layer is within
In the presence of a surfactant.
9. The resonator of claim 8, wherein:
the thickness of the gap layer or the non-conductive medium layer is within
In the range of
10. The resonator of claim 5, wherein:
in the horizontal direction, the outer end of the temperature compensation layer is positioned outside the boundary of the effective area, and the distance between the outer end of the temperature compensation layer and the boundary of the effective area is not less than 1 μm.
11. The resonator of claim 5, wherein:
in the horizontal direction, at the electric connection edge of the top electrode, the outer end of the gap layer or the non-conductive dielectric layer is flush with the non-electric connection edge of the bottom electrode or is positioned at the outer side of the non-electric connection edge of the bottom electrode; and/or
In the horizontal direction, at the non-electrical connection edge of the top electrode, the outer end of the void layer or the non-conductive medium layer is flush with or outside the outer end of the electrical connection region.
12. The resonator of claim 11, wherein:
at the electric connecting edge of the top electrode, in the horizontal direction, the outer end of the gap layer or the non-conductive medium layer is at least 1 μm outside the non-electric connecting edge of the bottom electrode; and/or
At the electric connection edge of the top electrode, in the horizontal direction, the inner end of the gap layer or the non-conductive medium layer is at least 1 μm inside the inner end of the electric connection area; and/or
At the non-electrically connected side of the top electrode, the inner end of the void layer or non-conductive dielectric layer is at least 1 μm inside the inner end of the electrically connected region in the horizontal direction.
13. The resonator of claim 5, wherein:
the inner end of the gap layer or the non-conductive dielectric layer is flush with the outer edge of the gap or is positioned at the inner side of the outer edge of the gap;
at least a portion of the boundary of the active area of the resonator is defined by the inner end of the interstitial layer or non-conductive dielectric layer.
14. The resonator of claim 7, wherein:
and arranging the suspension structure on the electric connection edge of the top electrode and/or the non-electric connection edge of the top electrode.
15. The resonator of claim 14, wherein:
the suspension structure is an annular suspension structure; or
The suspended structure is arranged on the electric connection edge of the top electrode and part of the non-electric connection edge of the top electrode.
16. The resonator of claim 15, wherein:
the suspension structures are arranged intermittently on the circumference of the non-electric connection edge of the top electrode, and the sum of the lengths of the disconnection positions is not more than 90% of the circumference of the effective area of the whole resonator.
17. The resonator of claim 7, wherein:
the width of the suspended structure is in the range of 0.2-20 μm.
18. The resonator of claim 7, wherein:
the non-electric connection edge of the top electrode is provided with the suspension structure, and the width of the contact part of the conductive layer and the non-electric connection edge is within the range of 0.2-10 mu m.
19. The resonator of claim 7, wherein:
the lateral distance existing between the outer edges of the voids and the edges of the acoustic mirror is in the range of 0.2-10 μm.
20. The resonator of claim 19, wherein:
the outer edge of the gap is located inside the edge of the acoustic mirror in the horizontal direction of the resonator; or
The outer edge of the void is outside the edge of the acoustic mirror in the horizontal direction of the resonator.
21. A filter comprising a resonator according to any of claims 1-20.
22. An electronic device comprising a filter according to 21 or a resonator according to any of claims 1-20.
Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.
Claims (22)
1. A bulk acoustic wave resonator comprising:
a substrate;
an acoustic mirror;
a bottom electrode;
a top electrode; and
a piezoelectric layer is formed on the substrate,
wherein:
the edge of the upper side of the top electrode, which surrounds the effective area of the resonator, is also provided with a conducting layer, and the conducting layer is electrically connected with the top electrode in an electric connection area on the upper side of the top electrode;
the resonator further comprises a temperature compensation layer, and the distance between the outer end of the temperature compensation layer and the effective area is not less than-1 μm in the horizontal direction.
2. The resonator of claim 1, wherein:
in the horizontal direction, the outer end of the temperature compensation layer is positioned outside the inner side edge of the electric connection area.
3. The resonator of claim 2, wherein:
on the non-electric connection side of the top electrode, in the horizontal direction, the outer end of the temperature compensation layer is positioned outside the outer edge of the electric connection area.
4. The resonator of claim 2, wherein:
at least one part of the bottom surface of the inner end of the conductive layer and the upper surface of the top electrode are provided with a gap or a non-conductive medium material layer, and at least one part of the boundary of the active area is limited by the outer side edge of the gap or the non-conductive medium material layer.
5. The resonator of claim 1, further comprising:
a layer of a void or non-conductive medium, at least a portion of which is located below the electrical connection region in a projection parallel to the thickness direction of the resonator.
6. The resonator of claim 5, wherein:
and a gap or a non-conductive medium material layer is arranged between at least one part of the bottom surface of the inner end of the conductive layer and the upper surface of the top electrode.
7. The resonator of claim 6, wherein:
a gap is formed between at least one part of the bottom surface of the inner end of the conducting layer and the upper surface of the top electrode to form a suspended structure.
8. The resonator of claim 5, wherein:
the thickness of the void layer or the non-conductive medium layer is within
Within the range of (1).
9. The resonator of claim 8, wherein:
the thickness of the void layer or the non-conductive medium layer is within
Within the range of (1).
10. The resonator of claim 5, wherein:
in the horizontal direction, the outer end of the temperature compensation layer is positioned outside the boundary of the effective area, and the distance between the outer end of the temperature compensation layer and the boundary of the effective area is not less than 1 μm.
11. The resonator of claim 5, wherein:
in the horizontal direction, at the electric connection edge of the top electrode, the outer end of the gap layer or the non-conductive dielectric layer is flush with the non-electric connection edge of the bottom electrode or is positioned at the outer side of the non-electric connection edge of the bottom electrode; and/or
In the horizontal direction, at the non-electrically connecting side of the top electrode, the outer end of the voiding layer or the non-conductive dielectric layer is flush with or outside the outer end of the electrical connection area.
12. The resonator of claim 11, wherein:
at the electric connection edge of the top electrode, in the horizontal direction, the outer end of the gap layer or the non-conductive dielectric layer is at least 1 μm outside the non-electric connection edge of the bottom electrode; and/or
At the electric connection edge of the top electrode, in the horizontal direction, the inner end of the gap layer or the non-conductive dielectric layer is at least 1 μm inside the inner end of the electric connection area; and/or
At the non-electrically connected side of the top electrode, the inner end of the void layer or non-conductive dielectric layer is at least 1 μm inside the inner end of the electrically connected region in the horizontal direction.
13. The resonator of claim 5, wherein:
the inner end of the gap layer or the non-conductive dielectric layer is flush with the outer edge of the gap or is positioned at the inner side of the outer edge of the gap;
at least a portion of the boundary of the active area of the resonator is defined by the inner end of the interstitial layer or non-conductive dielectric layer.
14. The resonator of claim 7, wherein:
and arranging the suspension structure on the electric connection edge of the top electrode and/or the non-electric connection edge of the top electrode.
15. The resonator of claim 14, wherein:
the suspension structure is an annular suspension structure; or
The suspended structure is arranged on the electric connection edge of the top electrode and part of the non-electric connection edge of the top electrode.
16. The resonator of claim 15, wherein:
the suspended structure is arranged on the periphery of the non-electric connection edge of the top electrode in an intermittent mode, and the sum of the lengths of the disconnected positions is not larger than 90% of the circumference of the effective area of the whole resonator.
17. The resonator of claim 7, wherein:
the width of the suspension structure is in the range of 0.2-20 μm.
18. The resonator of claim 7, wherein:
the non-electric connection edge of the top electrode is provided with the suspension structure, and the width of the contact part of the conductive layer and the non-electric connection edge is within the range of 0.2-10 mu m.
19. The resonator of claim 7, wherein:
the lateral distance existing between the outer edge of the void and the edge of the acoustic mirror is in the range of 0.2-10 μm.
20. The resonator of claim 19, wherein:
the outer edge of the gap is located inside the edge of the acoustic mirror in the horizontal direction of the resonator; or
The outer edge of the void is outside the edge of the acoustic mirror in the horizontal direction of the resonator.
21. A filter comprising a resonator as claimed in any one of claims 1-20.
22. An electronic device comprising a filter according to claim 21 or a resonator according to any of claims 1-20.
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| CN202110479872.0A CN115276589A (en) | 2021-04-30 | 2021-04-30 | Bulk acoustic wave resonator, filter, and electronic device |
| PCT/CN2022/089488 WO2022228452A1 (en) | 2021-04-30 | 2022-04-27 | Bulk acoustic resonator, filter, and electronic device |
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| KR101238360B1 (en) * | 2006-08-16 | 2013-03-04 | 삼성전자주식회사 | Resonator and the method thereof |
| DE102017118804B3 (en) * | 2017-08-17 | 2018-11-15 | RF360 Europe GmbH | Acoustic resonator with high Q |
| CN111010133A (en) * | 2019-09-03 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator, method of manufacturing the same, filter, and electronic apparatus |
| CN111245394B (en) * | 2019-12-16 | 2021-06-01 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrode having void layer and temperature compensation layer, filter, and electronic device |
| CN111010130B (en) * | 2019-12-19 | 2020-09-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with temperature compensation layer and electrical layer, filter and electronic equipment |
| CN111049490B (en) * | 2019-12-31 | 2020-09-15 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with electrical isolation layer, method of manufacturing the same, filter, and electronic apparatus |
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