Non-invasive ultra-high density electroencephalogram acquisition electrode
Technical Field
The invention relates to the technical field of brain-computer interfaces, in particular to a non-invasive brain electricity acquisition electrode.
Background
The Brain-machine interface (Brain-Computer Interface, BCI) is a system that alters the constant interaction between the CNS and its internal and external environment by detecting the activity of the central nervous system (Central Nervous System, CNS) and converting it into an artificial output to replace, repair, augment, supplement or improve the normal output of the CNS. Specifically, the BCI can not only establish a connection path from the human brain to external devices to replace, repair or improve a patient's impaired motor function due to injury, be used for peripheral control in a specific task environment, but also realize communication from the human brain to the machine to the human brain, thereby supplementing or enhancing man-machine interaction. The BCI technology research has the important significance that firstly, the capability of people for communicating information with the outside is greatly expanded, the revolution of the traditional human external communication and control mode or approach is possibly initiated, and secondly, the method is helpful for the deep understanding of the brain cognition mode, the information flow and the control mode, and opens up a brand-new research channel and method for reading the brain thinking model and the consciousness forming mechanism.
BCI systems are classified into invasive and non-invasive according to the manner in which the detection signal sensor is positioned. The electrode density of the invasive BCI system is extremely high and directly touches neurons, so that the attenuation of signals in the transmission process is avoided, the system has higher signal-to-noise ratio and good time, space and frequency resolution, and can realize fine motion control and complete more complex tasks in three-dimensional space and real time. However, the invasive BCI system requires a surgical operation to implant the electrode, which not only damages brain tissue, but also maintains long-term biocompatibility, which presents a great risk and technical difficulty, and thus, the application of the invasive BCI technology is limited. Furthermore, studies have shown that implantation of electrodes in the motor cortex of the brain causes neuronal damage and reduces motor function, mainly resulting in impaired fine motor function.
The non-invasive BCI system does not need to implant an electrode by operation, is easy to realize, safe and portable, and is the key point of the current research. However, when signals generated by the brain cortex nerve electric activity pass through tissue layers such as skull and reach the surface of scalp, serious attenuation occurs, and due to the existence of volume conductor effect, a great amount of space-time distribution information related to brain cortex nerve electric activity signal sources and high-frequency components of brain electricity are lost, so that the spatial resolution of non-invasive BCI brain electrical signals is lower, and effective extraction and accurate identification of finer action characteristics such as finger movement and the like are difficult to realize. Therefore, the research of the non-invasive BCI system needs to be further broken through, and the key point is how to effectively improve the spatial resolution of scalp electroencephalogram.
The current research shows that for the non-invasive BCI system, when the electrode spacing is low to millimeter level, the non-invasive brain electrical space sampling frequency can be improved, the high-frequency component of the brain electrical signal can be obtained, and the spatial resolution of the non-invasive brain electrical is improved. The electrode spacing of the traditional BCI system is more than 2-3 cm, and the high-density brain electrical electrode spacing can be as low as 1.4 cm, but still is difficult to reach millimeter level.
How to realize a novel non-invasive ultra-high density electroencephalogram acquisition electrode capable of improving the electrode density of a non-invasive BCI system is a technical problem to be solved in the invention.
Disclosure of Invention
In order to solve the problems that the existing non-invasive BCI system is low in electrode density and difficult to acquire high-frequency components and high-spatial resolution information of brain electrical signals, the invention provides a non-invasive ultra-high-density brain electrical acquisition electrode, and the spatial resolution of the non-invasive brain electrical signals is improved by constructing a non-invasive ultra-high-density brain-computer interface system, and the electrode distance can be reduced to millimeter level.
The technical scheme adopted by the invention for solving the problems is as follows:
the non-invasive ultra-high density electroencephalogram acquisition electrode comprises a hollow cylindrical electrode device 1 and a needle-shaped electrode device 2, wherein the needle-shaped electrode device 2 is sleeved on the hollow cylindrical electrode device 1, the needle-shaped electrode device 2 is of a detachable combined structure which slides up and down relative to the hollow cylindrical electrode device 1, and the non-invasive ultra-high density electroencephalogram acquisition electrode comprises:
The hollow cylindrical electrode device 1 further comprises a hollow cylindrical electrode 11 and a semitransparent insulating tube 12, wherein the hollow cylindrical electrode 11 is embedded in the inner cavity of the semitransparent insulating tube 12;
The needle electrode device 2 further comprises a needle electrode 21, a first insulating hollow cylinder 22, an insulating connecting assembly 23, a second insulating hollow cylinder 24 and an electrode wire 25, wherein the first insulating hollow cylinder 22 and the second insulating hollow cylinder 24 are respectively glued to two ends of the insulating connecting assembly 23, the bottom surfaces of the first insulating hollow cylinder 22 and the second insulating hollow cylinder 24 are parallel, the diameter of the first insulating hollow cylinder 22 is smaller than that of the second insulating hollow cylinder 24, one end of the needle electrode 21 is connected with the electrode wire 25 and glued to the inner cavity of the first insulating hollow cylinder 22, and the other end of the needle electrode 21 penetrates through the semitransparent insulating tube 12 in the inner cavity of the second insulating hollow cylinder 24 and is parallel to the hollow cylindrical electrode 11.
The needle electrode 21 has a hollow structure with a cross-sectional outer diameter of 1mm.
The total maximum outer diameter of the non-invasive ultra-high density electroencephalogram acquisition electrode is not more than 6mm.
Compared with the prior art, the invention has the following beneficial effects:
the invention greatly reduces the size of the non-invasive brain electrical acquisition electrode, can be used for the design of a non-invasive ultra-high density BCI system, reduces the electrode spacing to the millimeter level so as to improve the spatial resolution of the non-invasive brain electrical signal, and simultaneously improves the stability and usability of the non-invasive ultra-high density brain electrical acquisition electrode in use.
Drawings
FIG. 1 is a schematic front view of a non-invasive ultra-high density electroencephalogram acquisition electrode of the present invention;
FIG. 2 is a front cross-sectional view of a non-invasive ultra-high density electroencephalogram acquisition electrode of the present invention;
FIG. 3 is a schematic left view of a non-invasive ultra-high density electroencephalogram acquisition electrode of the present invention;
FIG. 4 is a left side view of a non-invasive ultra-high density electroencephalogram acquisition electrode according to the present invention;
FIG. 5 is a schematic diagram of the front view of the hollow cylindrical electrode device;
FIG. 6 is a schematic top view of a hollow cylindrical electrode assembly;
FIG. 7 is a schematic view showing the front view of the needle electrode device;
fig. 8 is a schematic view of the structure of the needle electrode device in left view.
Reference numerals:
1. a hollow cylindrical electrode device 11, a hollow cylindrical electrode 12 and a semitransparent insulating tube;
2. needle electrode device, 21, needle electrode, 22, first insulating hollow cylinder, 23, insulating coupling assembling, 24, second insulating hollow cylinder, 25, electrode wire.
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings and examples.
The specific structure of the invention is described below with reference to fig. 1 to 8, wherein the invention comprises a hollow cylindrical electrode device 1 and a needle-shaped electrode device 2, wherein:
the hollow cylindrical electrode device 1 comprises a hollow cylindrical electrode 11 and a semitransparent insulating tube 12, wherein the hollow cylindrical electrode 11 is embedded in the inner cavity of the semitransparent insulating tube 12;
The needle electrode device 2 comprises a needle electrode 21, a first insulating hollow cylinder 22, an insulating connecting component 23, a second insulating hollow cylinder 24 and an electrode wire 25, wherein the outer wall of the first insulating hollow cylinder 22 is glued on the inner side of one end of the insulating connecting component 23, and the bottom surface of the other end of the insulating connecting component 23 is glued on the upper surface of the second insulating hollow cylinder 24. The bottom surfaces of the first insulating hollow cylinder 22 and the second insulating hollow cylinder 24 are parallel. The semitransparent insulating tube 12 is sleeved in the inner cavity of the second insulating hollow cylinder 24. One end of the needle-shaped electrode 21 is connected with the electrode wire 25 and is glued to the inner cavity of the first insulating hollow cylinder 22, and the other end of the needle-shaped electrode is suspended to pass through the semitransparent insulating tube 12 in the inner cavity of the second insulating hollow cylinder 24 and is arranged parallel to the hollow cylinder electrode 11.
The needle-shaped electrode device 2 is sleeved outside the hollow cylindrical electrode device 1 and penetrates through the inner cavity of the hollow cylindrical electrode device 1 in a suspending manner. The needle electrode device 2 can slide up and down to adjust the position of the needle electrode.
Further, the second insulating hollow cylinder 24 has an inner diameter equal to the outer diameter of the translucent insulating tube 12, and the needle electrode device 2 has slight resistance against sliding up and down with respect to the hollow cylindrical electrode device 1.
Further, the hollow cylindrical electrode 11 is made of Ag/AgCl material.
Further, the needle electrode 21 is made of Ag/AgCl material and is hollow, and the outer diameter of the cross section is not more than 1mm;
Further, the outer diameter of the first insulating hollow cylinder 22 is smaller than the inner diameter of the second insulating hollow cylinder 24.
Furthermore, the maximum outer diameter of the integral structure of the non-invasive ultra-high density electroencephalogram acquisition electrode is not more than 6mm.
The needle electrode device and the hollow cylindrical electrode device are combined and can slide relatively, the needle electrode is adjusted to be fully contacted with the scalp of a user, so that stability is improved, stable electroencephalogram signals are facilitated to be obtained, the contact area between the conductive paste and the scalp of the user and between the conductive paste and the needle electrode is fully increased, stability is further improved, signal to noise ratio of the electroencephalogram signals is facilitated to be improved, the diameter of a first insulating hollow cylinder in the needle electrode device is smaller than that of a second insulating hollow cylinder, and the needle electrode device is convenient to inject the conductive paste, so that usability of the needle electrode device is improved.
The process for realizing the electroencephalogram acquisition by using the non-invasive ultra-high density electroencephalogram acquisition electrode comprises the following steps:
The hollow cylindrical electrode device 1 is fixed on an electroencephalogram cap, the needle-shaped electrode device 2 is sleeved on the hollow cylindrical electrode device 1, the lower end of the needle-shaped electrode 21 of the needle-shaped electrode device 2 is fully contacted with the scalp of a user through sliding adjustment, and the other end of the electrode wire 25 is connected with an electroencephalogram amplifier to collect electroencephalogram signals.