CN115101652A - Micro light-emitting diode display device - Google Patents

Micro light-emitting diode display device Download PDF

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Publication number
CN115101652A
CN115101652A CN202210760027.5A CN202210760027A CN115101652A CN 115101652 A CN115101652 A CN 115101652A CN 202210760027 A CN202210760027 A CN 202210760027A CN 115101652 A CN115101652 A CN 115101652A
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light
layer
common layer
display device
conductive layer
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陈彦烨
曾于芮
吴志凌
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PlayNitride Inc
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PlayNitride Inc
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
    • H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
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    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H01L25/167—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits comprising optoelectronic devices, e.g. LED, photodiodes
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
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    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/20—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular shape, e.g. curved or truncated substrate
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    • H01—ELECTRIC ELEMENTS
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    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
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Abstract

A micro light emitting diode display device comprises a circuit substrate, an epitaxial structure and a conductive layer. The epitaxial structure is electrically connected with the circuit substrate and comprises a common layer and a plurality of light-emitting platforms. The light-emitting platforms are arranged on the common layer, wherein the thickness of the common layer is smaller than that of the light-emitting platforms, and the common layer is provided with a first surface exposed by the light-emitting platforms and a second surface opposite to the first surface. The conductive layer is configured on the second surface of the common layer and exposes the sub-regions of the second surface, wherein the vertical projection of the conductive layer on the common layer overlaps the vertical projection of the first surface on the common layer.

Description

Micro light-emitting diode display device
Technical Field
The present disclosure relates to display devices, and particularly to a micro light emitting diode display device.
Background
The plurality of pixels in the micro light emitting diode display may be formed by disposing a plurality of semiconductor light emitting platforms on a semiconductor base layer. Each semiconductor light-emitting platform corresponds to one sub-pixel and is arranged on the semiconductor substrate layer in an array mode. The semiconductor base layer may be used as a common electrode of each light emitting platform, and is electrically connected to the circuit substrate through a bonding metal layer.
However, the resistance of the semiconductor base layer is higher than that of the conductor. For a light emitting platform that is far from a common ground point (common ground point), the number of pairs of electrons and holes that can be recombined is low. In contrast, the number of pairs of electron-hole pairs that can recombine is higher for light-emitting platforms that are closer to the common ground. Therefore, the micro led display may have non-uniform brightness.
Disclosure of Invention
The invention provides a micro light-emitting diode display device which is uniform in brightness.
According to an embodiment of the present invention, a micro light emitting diode display device is provided, which includes a circuit substrate, an epitaxial structure and a conductive layer. The epitaxial structure is electrically connected with the circuit substrate and comprises a common layer and a plurality of light-emitting platforms. The light-emitting platforms are arranged on the common layer, wherein the thickness of the common layer is smaller than that of the light-emitting platforms, and the common layer is provided with a first surface exposed by the light-emitting platforms and a second surface opposite to the first surface. The conductive layer is configured on the second surface of the common layer and exposes the sub-regions of the second surface, wherein the vertical projection of the conductive layer on the common layer overlaps the vertical projection of the first surface on the common layer.
According to another embodiment of the present invention, a micro light emitting diode display device is provided, which includes a circuit substrate, an epitaxial structure and a transparent conductive layer. The epitaxial structure is electrically connected with the circuit substrate and comprises a common layer and a plurality of light-emitting platforms. The light-emitting platforms are arranged on the common layer, wherein the common layer is provided with a first surface exposed by the light-emitting platforms and a second surface opposite to the first surface. The transparent conductive layer is configured on the second surface of the common layer, wherein the transparent conductive layer completely covers the second surface.
In view of the above, in the micro light emitting diode display device provided in the embodiment of the invention, the conductive layer is disposed on the common layer of the epitaxial structure. Since the resistance value of the conductive layer is smaller than that of the common layer, the current of the circuit substrate can be transmitted more uniformly through the conductive layer. In this case, the same potential difference can drive the same number of electron-hole pairs to be recombined for the light-emitting platforms with different distances from the common ground point, so that the micro light-emitting diode display device can avoid the situation of uneven brightness. In addition, as the resolution requirement is higher, the arrangement of the light-emitting platforms, i.e., the sub-pixels, is denser, and the yield is greatly increased as compared to the conventional case where the conductive layer is disposed on the first surface of the common layer.
In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.
Drawings
FIG. 1A is a schematic plan view of a micro light emitting diode display device according to an embodiment of the present invention;
FIG. 1B shows a schematic cross-sectional view along the line I-I' shown in FIG. 1A;
FIG. 2A is a schematic plan view of a micro light emitting diode display device according to an embodiment of the invention;
FIG. 2B shows a schematic cross-sectional view along the line II-II' shown in FIG. 2A;
fig. 3 to 5 are schematic cross-sectional views illustrating a micro light emitting diode display device according to an embodiment of the present invention.
The reference numbers illustrate:
1. 2, 3, 4, 5 micro light-emitting diode display device
10. 10A common layer
10H through hole
20 luminous platform
20G luminous platform group
30. 30A, 30B1, 30B2, 50, 30C, 30T conductive layer
40 semiconductor raised part
101 first surface
102. 102A second surface
102P stereoscopic pattern
102S, 102G sub-region
120. 130, 140, 150 bonding metal layer
140E epitaxial segment
201 first type semiconductor layer
202 a second type semiconductor layer
203 light-emitting layer
220 insulating layer
A1 display area
A2 non-display area
C1 Circuit Board
D1 first direction
D2 second direction
D3 third Direction
ES, ES1 epitaxial structure
G. G' is a groove
PX display sub-pixel
Detailed Description
Referring to fig. 1A and 1B, the micro led display device 1 includes a display area a1 and a non-display area a2, and includes a circuit substrate C1, an epitaxial structure ES, and a conductive layer 30. The display area a1 refers to an area where a plurality of display sub-pixels PX are disposed, and the non-display area a2 is disposed at least partially around the display area a1, and may be an area where a plurality of driving elements (not shown) are disposed. Each display sub-pixel PX has a light-emitting platform 20 to provide image light of the micro light-emitting diode display device 1.
The epitaxial structure ES includes a common layer 10 and a plurality of light-emitting platforms 20. As shown in fig. 1B, a plurality of light-emitting platforms 20 respectively corresponding to the plurality of display sub-pixels PX are disposed on the common layer 10, and each light-emitting platform 20 includes a first-type semiconductor layer 201, a second-type semiconductor layer 202, and a light-emitting layer 203, wherein the light-emitting layer 203 is a Multiple Quantum Well (MQW). The common layer 10 is disposed on a plane parallel to a plane formed by the first direction D1 and the second direction D2, and has a first surface 101 exposed by the plurality of light-emitting platforms 20 and a second surface 102 opposite to the first surface 101.
According to an embodiment of the present invention, the common layer 10 is an N-type semiconductor, the first type semiconductor layer 201 is an N-type semiconductor, and the second type semiconductor layer 202 is a P-type semiconductor, but the present invention is not limited thereto. In another embodiment of the present invention, the common layer 10 is a P-type semiconductor, the first type semiconductor layer 201 is a P-type semiconductor, and the second type semiconductor layer 202 is an N-type semiconductor. In particular, the common layer 10 and the first type semiconductor layer 201 may be integrally formed, i.e., they are the same layer. For example, by forming a plurality of separated first-type semiconductor layers 201 and a continuous common layer 10 through an etching process, yield in mass transfer to the circuit substrate C1 can be increased, and power consumption can be reduced by leaving the common layer 10 as a common electrode.
The circuit substrate C1 may be, for example, a Complementary Metal-Oxide-Semiconductor (CMOS) substrate, a Liquid Crystal On Silicon (LCOS) substrate, a Thin Film Transistor (TFT) substrate, or other substrates having an operating circuit, but is not limited thereto. As shown in fig. 1B, the epitaxial structure ES is electrically connected to the circuit substrate C1 through the bonding metal layers 120, 130, 140, 150, wherein the bonding metal layers 140, 150 are common ground points. When a voltage is applied to any one of the bonding metal layers 120 through the circuit board C1, a potential difference is provided between the bonding metal layer 120 and a common ground point, and a current is generated due to the potential difference, so that recombination of electron-hole pairs occurs in the light-emitting platform 20 connected to the bonding metal layer 120 to which the voltage is applied, thereby generating light. The light emitted from the light-emitting platform 20 exits the micro light-emitting diode display device 1 along a direction substantially parallel to the third direction D3 and enters the user's eyes, wherein the first direction D1, the second direction D2 and the third direction D3 are perpendicular to each other.
Since the common layer 10 used as the common electrode is a semiconductor, its resistance value is higher than that of a conductor. When a predetermined potential difference is applied to the common ground and the bonding metal layer 120 farther from the common ground, the number of pairs of electron-hole pairs for recombination of the corresponding light-emitting platforms 20 is lower. When the same potential difference is applied to the common ground point and the bonding metal layer 120 closer to the common ground point, the number of pairs of electron-hole pairs for recombination of the corresponding light-emitting platforms 20 is higher. In order to avoid the above situation, the conductive layer 30 is disposed on the second surface 102 of the common layer 10, and the thickness of the common layer 10 in the third direction D3 is smaller than that of the light-emitting platform 20, so as to assist the current to be transmitted by the conductive layer 30 with low resistance, and to enable the current to be uniformly distributed. Even if the same potential difference is applied to the common ground and the bonding metal layer 120 far from the common ground, the number of pairs of electron-hole pairs for recombination of the corresponding light-emitting platforms 20 is not low, and light loss caused by reflection of the light emitted from the light-emitting platforms 20 inside the common layer 10 is avoided. Therefore, each of the light emitting platforms 20 of the micro light emitting diode display device 1 may have the same luminance under the same potential difference applied, and the micro light emitting diode display device 1 may have good luminance uniformity.
When the area of the conductive layer 30 is larger, the current uniformity is better, and the brightness uniformity of the micro led display device 1 is better. If the perpendicular projection of the conductive layer 30 on the common layer 10 is formed as a first projection and the perpendicular projection of the first surface 101 on the common layer 10 is formed as a second projection, in an embodiment, the area of the overlapping portion of the first projection and the second projection is greater than or equal to 0.5 times the area of the second projection. In an embodiment, the perpendicular projection (second projection) of the first surface 101 on the common layer 10 falls entirely within the perpendicular projection (first projection) of the conductive layer 30 on the common layer 10. In another embodiment, the perpendicular projection (second projection) of the first surface 101 on the common layer 10 completely falls within the perpendicular projection (first projection) of the conductive layer 30 on the common layer 10, and the area of the portion where the first projection and the second projection overlap is equal to the area of the second projection.
In the present embodiment, the conductive layer 30 is an opaque high-conductivity material, such as a metal material, e.g., gold, titanium, aluminum, silver, platinum, and alloys thereof. Therefore, the conductive layer 30 is disposed to expose a plurality of sub-regions 102S of the second surface 102, and the plurality of sub-regions 102S respectively correspond to the plurality of light-emitting mesas 20. Specifically, as shown in fig. 1B, the vertical projections of the sub-regions 102S on the common layer 10 respectively overlap the vertical projections of the light-emitting platforms 20 on the common layer 10, so that the light emitted from each light-emitting platform 20 can penetrate through the corresponding sub-region 102S and then exit the micro light-emitting diode display device 1. The perpendicular projection of the conductive layer 30 on the common layer 10 overlaps the perpendicular projection of the first surface 101 on the common layer 10, and does not overlap the perpendicular projection of the light-emitting platform 20 on the common layer 10, but the invention is not limited thereto. In an embodiment of the present invention, a vertical projection of the conductive layer 30 on the common layer 10 overlaps at least a portion of a vertical projection of the light-emitting platform 20 on the common layer 10. In other words, the vertical projection of at least a portion of the plurality of sub-regions 102S on the common layer 10 is smaller than the vertical projection of the corresponding ones of the light-emitting platforms 20 on the common layer 10. With such a configuration, the light emitted from the light-emitting platform 20 is further limited by the conductive layer 30, and the direction of light traveling is more concentrated, thereby preventing crosstalk (crosstalk) from occurring between the display sub-pixels PX. Preferably, the ratio of the vertical projection of at least a portion of the plurality of sub-regions 102S on the common layer 10 to the vertical projection of the corresponding light-emitting platforms 20 on the common layer 10 is between 0.5 and 1, and less than 0.5 may result in insufficient light extraction efficiency.
Further, since the conductive layer 30 is an opaque high conductivity material, the thickness thereof is configured to be less than or equal to the thickness of the epitaxial structure ES, so as to reduce the amount of light emitted by each light-emitting platform 20 absorbed by the conductive layer 30. It should be noted that the total area of the conductive layers 30 disposed in the display area a1 is larger than the total area of the conductive layers 30 disposed in the non-display area a2, so as to ensure that the current can be more uniformly transmitted in the conductive layers 30 in the display area a1, and each of the light emitting platforms 20 has the same brightness under the same applied potential difference.
In the present embodiment, the micro led display device 1 further includes a semiconductor pad-up portion 40, wherein the semiconductor pad-up portion 40 and the bonding metal layers 140 and 150 serving as a common ground point are disposed in the non-display area a2, and the plurality of light-emitting platforms 20 are disposed in the display area a 1.
The semiconductor raised portion 40 may be fabricated in the same process as the plurality of light emitting platforms 20 and have a similar structure. Since the top surfaces of the light-emitting platform 20 and the semiconductor pad height portion 40 on the side away from the common layer 10 are coplanar, the yield rate of the bonding metal layer 150 and the bonding metal layer 130 on the circuit substrate C1 when being respectively bonded with the bonding metal layer 140 and the bonding metal layer 120 can be improved, and the bonding metal layer 140 has an extension 140E, so that the bonding metal layer 140 can be electrically connected between the common layer 10 and the bonding metal layer 150.
In order to fully illustrate various embodiments of the invention, other embodiments of the invention will be described below. It should be noted that the following embodiments follow the reference numerals and parts of the contents of the foregoing embodiments, wherein the same reference numerals are used to indicate the same or similar elements, and the description of the same technical contents is omitted. For the description of the omitted parts, reference may be made to the foregoing embodiments, and the following embodiments will not be repeated.
Referring to fig. 2A and 2B, the micro led display device 2 includes a display area a1 and a non-display area a2, and includes a circuit substrate C1, an epitaxial structure ES, and a conductive layer 30A. The plurality of light emitting platforms 20 are grouped into a plurality of light emitting platform groups 20G with four light emitting platforms 20 as a unit; the conductive layer 30A is disposed to expose a plurality of sub-regions 102G of the second surface 102, wherein the plurality of sub-regions 102G respectively correspond to the plurality of light-emitting platform groups 20G. However, the present invention is not limited thereto, and in some embodiments, the light-emitting platforms 20 in the micro led display device 2 are grouped into a plurality of light-emitting platform groups 20G by at least three light-emitting platforms 20, wherein when color conversion elements (not shown, for example, quantum dots) are subsequently disposed on the second surfaces 102 corresponding to the at least three light-emitting platforms 20, the at least three light-emitting platforms 20 can respectively emit red light, green light, and blue light, so as to form a full-color display device.
Similar to the micro led display device 1, the total area of the conductive layers 30A disposed in the display area a1 of the micro led display device 2 is larger than the total area of the conductive layers 30A disposed in the non-display area a2, so as to ensure that the current can be more uniformly transmitted in the conductive layers 30A of the display area a1, and each of the light emitting platforms 20 has the same brightness under the same applied potential difference.
Referring to fig. 3, the micro light emitting diode display device 3 includes a display region and a non-display region, and includes a circuit substrate C1, an epitaxial structure ES, a conductive layer 30B, a conductive layer 50, and an insulating layer 220. The conductive layer 30B includes a conductive layer 30B1 disposed in the display region and a conductive layer 30B2 disposed in the non-display region.
The width of the conductive layer 30B1 in the direction away from the second surface 102 (i.e., the positive direction along the third direction D3) is gradually decreased, and has a condition that it is wider at the bottom and narrower at the top, and has a tapered shape in the cross-sectional view shown in fig. 3, so that the light emitted from the corresponding light-emitting platform 20 is reflected to be more concentrated toward the center. When the color conversion device (not shown), such as a quantum dot, is subsequently disposed on the second surface 102 corresponding to the light-emitting platform 20, the groove G formed by the conductive layer 30B1 allows the color conversion device disposed therein to have a larger accommodating space with larger process margin. In other embodiments, conductive layer 30B1 tapers in width in a direction away from second surface 102 and has a trapezoidal shape in cross-sectional view.
The conductive layer 30B2 in the non-display region is further disposed in the through hole 10H penetrating the common layer 10 to electrically connect the bonding metal layer 140, the bonding metal layer 150 and the circuit substrate C1. The current from the circuit substrate C1 is sequentially transmitted through the bonding metal layer 150, the bonding metal layer 140, and the conductive layer 30B2 in the through hole 10H to the conductive layer 30B2 and the conductive layer 30B1 on the second surface 102 without passing through the common layer 10 with a higher resistance. The total area of the conductive layer 30B1 disposed in the display area is larger than the total area of the conductive layer 30B2 disposed in the non-display area to ensure that the current can be more uniformly transmitted in the conductive layer 30B1, and each of the light emitting platforms 20 has the same brightness under the same applied potential difference.
The micro led display device 3 of the present embodiment further includes another conductive layer 50 disposed on the first surface 101 of the common layer 10. In other words, the conductive layer 50 is disposed between the light-emitting platforms 20. The conductive layer 50 is also configured to transmit current from the circuit substrate C1, and the insulating layer 220 is disposed between the conductive layer 50 and the plurality of light-emitting mesas 20.
Referring to fig. 4, the micro led display device 4 includes a circuit substrate C1, an epitaxial structure ES1, and a conductive layer 30C.
The epitaxial structure ES1 includes a common layer 10A and a plurality of light-emitting platforms 20. The common layer 10A may be formed by epitaxial growth on a patterned epitaxial substrate, and includes a plurality of three-dimensional patterns 102P, and the three-dimensional patterns 102P are disposed on the second surface 102A. That is, the common layer 10A is different from the common layer 10 shown in fig. 1B in that the second surface 102 of the common layer 10 is a plane, and the second surface 102A of the common layer 10A has a plurality of solid patterns 102P. The conductive layer 30C is disposed between the grooves G' formed by the three-dimensional patterns 102P. In this case, the contact area between the conductive layer 30C disposed on the plurality of solid patterns 102P and the second surface 102A is larger than the contact area between the conductive layer 30 and the second surface 102 in fig. 1B, so that the bonding yield of the common layer 10A and the conductive layer 30C is improved, and the transfer efficiency of the current from the circuit board C1 is improved.
The conductive layer 30, the conductive layer 30A, the conductive layer 30B, and the conductive layer 30C are opaque conductive layers. However, the invention is not limited thereto, and in some embodiments, the conductive layers 30, 30A, 30B and 30C are transparent conductive layers.
Referring to fig. 5, the micro led display device 5 includes a circuit substrate C1, an epitaxial structure ES, and a transparent conductive layer 30T. The transparent conductive layer 30T is disposed on the second surface 102 of the common layer 10 and completely covers the second surface 102. The material of the transparent conductive layer 30T may be a metal oxide material such as Indium Tin Oxide (ITO) or zinc oxide (ZnO). Since the transparent conductive layer 30T is transparent, it is not necessary to expose a plurality of sub-regions of the second surface like the opaque conductive layers of the previous embodiments, so that the contact area between the transparent conductive layer 30T and the second surface 102 is maximized, and the transmission efficiency of the current from the circuit substrate C1 is greatly improved.
In summary, the micro led display device provided in the embodiments of the invention disposes the conductive layer on the common layer of the epitaxial structure. Since the resistance value of the conductive layer is smaller than that of the common layer, a current from the circuit substrate can be transmitted within the conductive layer. In this case, the same potential difference can drive the same number of pairs of electron holes to recombine for the light emitting platforms with different distances from the common ground point, and the situation of uneven brightness of the micro light emitting diode display device can be avoided. In addition, compared with the condition that the conducting layer is arranged on the first surface of the common layer, the conducting layer is arranged on the second surface, and the yield is greatly improved.

Claims (13)

1. A micro light emitting diode display device, comprising:
a circuit substrate;
the epitaxial structure, electric connection the circuit substrate, and include:
a common layer; and
a plurality of light-emitting mesas disposed on the common layer, wherein the thickness of the common layer is less than the thickness of the plurality of light-emitting mesas, and the common layer has a first surface exposed by the plurality of light-emitting mesas and a second surface opposite to the first surface; and
a first conductive layer disposed on the second surface of the common layer, wherein a perpendicular projection of the first conductive layer on the common layer overlaps a perpendicular projection of the first surface on the common layer.
2. The micro light-emitting diode display device according to claim 1, wherein the perpendicular projection of the first conductive layer on the common layer is formed as a first projection, the perpendicular projection of the first surface on the common layer is formed as a second projection, and an area of a portion where the first projection and the second projection overlap is greater than or equal to 0.5 times an area of the second projection.
3. The miniature light emitting diode display device of claim 2, wherein said second projection falls entirely within said first projection.
4. The micro light-emitting diode display device of claim 1, wherein a thickness of the first conductive layer is less than or equal to a thickness of the epitaxial structure.
5. The micro led display device of claim 1, wherein the first conductive layer exposes a plurality of sub-regions of the second surface, and the sub-regions respectively correspond to the light-emitting platforms.
6. The miniature light emitting diode display device of claim 5, wherein a vertical projection of at least some of said plurality of sub-regions on said common layer is smaller than a vertical projection of corresponding of said plurality of light emitting platforms on said common layer.
7. The micro light-emitting diode display device of claim 1, wherein the light-emitting platforms are grouped into a plurality of light-emitting platform groups, the first conductive layer exposes sub-regions of the second surface, and the sub-regions respectively correspond to the light-emitting platform groups.
8. The micro light emitting diode display device of claim 1, further comprising a display region and a non-display region, wherein the display region is configured with the plurality of light emitting platforms, the non-display region at least partially surrounds the display region, and a total area of the first conductive layers configured in the display region is larger than a total area of the first conductive layers configured in the non-display region.
9. The micro light-emitting diode display device of claim 1, wherein the first conductive layer has a decreasing width in a direction away from the second surface.
10. The micro led display device according to claim 1, wherein the common layer comprises a plurality of three-dimensional patterns, the three-dimensional patterns are disposed on the second surface, and the first conductive layer is disposed between grooves formed by the three-dimensional patterns.
11. The micro led display device of claim 1, wherein the first conductive layer is disposed in a via hole penetrating through the common layer for electrically connecting to the circuit substrate.
12. The micro led display device of claim 1, further comprising a second conductive layer disposed on the first surface of the common layer.
13. A miniature light emitting diode display device, comprising:
a circuit substrate;
the epitaxial structure, electric connection the circuit substrate, and include:
a common layer; and
a plurality of light-emitting platforms disposed on the common layer, wherein the common layer has a first surface exposed by the plurality of light-emitting platforms and a second surface opposite to the first surface; and
a transparent conductive layer disposed on the second surface of the common layer, wherein the transparent conductive layer completely covers the second surface.
CN202210760027.5A 2021-08-20 2022-06-30 Micro light-emitting diode display device Pending CN115101652A (en)

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