CN115047332A - Silicon carbide switch device testing arrangement - Google Patents
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- CN115047332A CN115047332A CN202210762723.XA CN202210762723A CN115047332A CN 115047332 A CN115047332 A CN 115047332A CN 202210762723 A CN202210762723 A CN 202210762723A CN 115047332 A CN115047332 A CN 115047332A
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Abstract
本申请涉及一种碳化硅开关器件测试装置,其包括连接铜排与压杆;连接铜排的一端与测试电容的端子电连接,连接铜排的另一端固定连接于压杆的中间部位,连接铜排的一端为压接端以压接并电连接碳化硅开关器件的端子;连接铜排所在平面与压杆所在直线之间的夹角在设定角度范围内,连接铜排距离碳化硅开关器件的端子的距离值在预设距离范围内,本申请具有使得测试回路中的杂感达到最低且满足碳化硅开关器件的测试要求的效果。
The application relates to a silicon carbide switching device testing device, which includes a connecting copper bar and a pressure rod; one end of the connecting copper bar is electrically connected to a terminal of a testing capacitor, and the other end of the connecting copper bar is fixedly connected to the middle part of the pressing rod, and is connected to One end of the copper bar is a crimping end to crimp and electrically connect the terminal of the silicon carbide switch device; the angle between the plane where the copper bar is connected and the straight line where the pressing rod is located is within the set angle range, and the distance between the connecting copper bar and the silicon carbide switch is The distance value of the terminal of the device is within the preset distance range, and the present application has the effect of minimizing the stray inductance in the test loop and meeting the test requirements of the silicon carbide switching device.
Description
技术领域technical field
本申请涉及碳化硅开关器件测试的领域,尤其是涉及一种碳化硅开关器件测试装置。The present application relates to the field of silicon carbide switching device testing, and in particular, to a silicon carbide switching device testing device.
背景技术Background technique
碳化硅开关器件为宽禁带技术,相比于经典的硅开关器件,碳化硅开关器件具有低通态电阻和高热导率的特点,这些特点有助于提高最终应用电路的能效和工作温度。因此碳化硅开关器件的开发技术开始逐渐得到发展,在设计碳化硅开关器件的过程中,需要对设计产品进行测试,因而会使用到专门针对碳化硅开关器件的测试平台。Silicon carbide switching devices are wide bandgap technology. Compared with classic silicon switching devices, silicon carbide switching devices have the characteristics of low on-state resistance and high thermal conductivity, which help to improve the energy efficiency and operating temperature of the final application circuit. Therefore, the development technology of silicon carbide switching devices has gradually been developed. In the process of designing silicon carbide switching devices, it is necessary to test the designed products, so a test platform specially designed for silicon carbide switching devices will be used.
对于碳化硅开关器件测试平台,测试平台的主回路杂感是衡量测试平台性能的重要指标。碳化硅开关器件的开关特性中电流的上升速度和下降速度均很快,这就要求测试平台的主回路杂感足够小,才能保证碳化硅开关器件在测试的时候可以全量程被准确的测试。随着测试效率要求的日益增加,测试厂商需要更为自动化的测试平台,因此在原有人工操作的测试平台的基础上增加了安放碳化硅开关器件的自动化机械结构。主回路中串联了额外的自动化机械结构,增加了主回路杂感,使得自动化测试平台的测试性能直线下降。For the silicon carbide switching device test platform, the main circuit stray inductance of the test platform is an important indicator to measure the performance of the test platform. In the switching characteristics of silicon carbide switching devices, the current rises and falls quickly, which requires that the main loop of the test platform has a small enough stray inductance to ensure that the silicon carbide switching device can be accurately tested in the full range during testing. With the increasing requirements for test efficiency, test manufacturers need a more automated test platform. Therefore, an automated mechanical structure for placing silicon carbide switching devices is added on the basis of the original manually operated test platform. An additional automated mechanical structure is connected in series in the main circuit, which increases the miscellaneous inductance of the main circuit and makes the test performance of the automated test platform plummet.
目前增加了自动化结构的测试平台主回路杂感一般为40nH,远低于碳化硅开关器件测试条件的要求,因此需要一种主回路杂感符合碳化硅开关器件测试要求的自动化测试平台。At present, the main circuit stray inductance of the test platform with an automated structure is generally 40nH, which is far lower than the requirements for the test conditions of silicon carbide switching devices.
发明内容SUMMARY OF THE INVENTION
为了在符合碳化硅开关器件测试要求的情况下自动测试碳化硅开关器件,本申请提供一种碳化硅开关器件测试装置。In order to automatically test the silicon carbide switching device under the condition of meeting the testing requirements of the silicon carbide switching device, the present application provides a testing device for the silicon carbide switching device.
本申请提供的一种碳化硅开关器件测试装置采用如下的技术方案:A silicon carbide switching device testing device provided by the application adopts the following technical solutions:
一种碳化硅开关器件测试装置,包括连接铜排与压杆;A silicon carbide switching device testing device, comprising a connecting copper bar and a pressure rod;
所述连接铜排的一端与测试电容的端子电连接,所述连接铜排的另一端固定连接于所述压杆的中间部位,所述连接铜排的一端为压接端以压接并电连接所述碳化硅开关器件的端子;One end of the connecting copper bar is electrically connected to the terminal of the test capacitor, the other end of the connecting copper bar is fixedly connected to the middle part of the pressing rod, and one end of the connecting copper bar is a crimping end to be crimped and electrically connected. connecting the terminals of the silicon carbide switching device;
所述连接铜排所在平面与所述压杆所在直线之间的夹角在设定角度范围内,所述连接铜排距离所述碳化硅开关器件的端子的距离值在预设距离范围内。The included angle between the plane where the connecting copper bar is located and the straight line where the pressing rod is located is within a set angle range, and the distance value between the connecting copper bar and the terminal of the silicon carbide switch device is within a preset distance range.
通过采用上述技术方案,连接铜排连接在压杆的中间部位,在此基础上,连接铜排与压杆之间的姿态与位置会影响测试回路中的杂感,通过调节连接铜排与压杆之间的姿态关系至设定角度范围以及调节连接铜排与压杆之间的位置关系至预设距离范围,使得测试回路中的杂感达到最低,从而满足碳化硅开关器件的测试要求。By adopting the above technical solution, the connecting copper bar is connected to the middle part of the pressure bar. On this basis, the posture and position between the connecting copper bar and the pressure bar will affect the miscellaneous inductance in the test loop. By adjusting the connecting copper bar and the pressure bar The attitude relationship between them is to the set angle range and the positional relationship between the connecting copper bar and the pressure rod is adjusted to the preset distance range, so that the stray inductance in the test loop is minimized, thereby meeting the test requirements of silicon carbide switching devices.
作为优选,所述连接铜排与所述压杆固定连接的部位包围所述压杆。Preferably, the portion where the connecting copper bar is fixedly connected with the pressing rod surrounds the pressing rod.
通过采用上述技术方案,连接铜排包围压杆,能够让聚集在连接铜排与压杆之间连接部位的电荷得到分散,利于降低杂感。By adopting the above technical solution, the connecting copper bar surrounds the pressing rod, so that the electric charges accumulated in the connecting part between the connecting copper bar and the pressing rod can be dispersed, which is beneficial to reduce the miscellaneous feeling.
作为优选,所述压接端设有用于压紧碳化硅开关器件的端子的压紧尖端。Preferably, the crimping end is provided with a pressing tip for pressing the terminal of the silicon carbide switching device.
通过采用上述技术方案,压紧尖端可对碳化硅开关器件的端子施加更高的压强,压接效果更好。By adopting the above technical solution, the pressing tip can exert higher pressure on the terminal of the silicon carbide switch device, and the pressing effect is better.
作为优选,所述压杆设有多个,且连接于同一个所述连接铜排,并相互并联电连接。Preferably, there are a plurality of the pressing rods, which are connected to the same connecting copper bar, and are electrically connected in parallel with each other.
通过采用上述技术方案,多个压杆并联后能将碳化硅开关器件的端子压接得更紧密,还能降低装置中设置压杆额外带来的杂感。By adopting the above technical solution, the terminals of the silicon carbide switch device can be crimped more tightly after a plurality of pressing rods are connected in parallel, and the additional miscellaneous feeling caused by the pressing rods in the device can be reduced.
作为优选,多个所述压杆相互平行设置。Preferably, a plurality of the pressing rods are arranged in parallel with each other.
通过采用上述技术方案,压杆相互平行设置能够在压杆长度相同的情况下对碳化硅开关器件的端子施加均匀的压力,同时让压杆端与碳化硅开关器件的端子接触的结构保持一致,从而让多个压杆上的杂感分布更为均匀,有利于提高压杆并联降低杂感的效果。By adopting the above technical solution, the parallel arrangement of the pressure rods can apply a uniform pressure to the terminals of the silicon carbide switch device under the condition of the same length of the pressure rods, and at the same time, the contact structure between the pressure rod ends and the terminals of the silicon carbide switch device can be kept consistent, Therefore, the distribution of the clutter on the plurality of pressure rods is more uniform, which is beneficial to improve the effect of reducing the clutter in the parallel connection of the pressure rods.
作为优选,所述压杆上插接配合有第一绝缘压板,所述第一绝缘压板上开设有第一过孔,所述压杆过盈连接在所述第一过孔内,所述第一绝缘压板在所述压杆上位于所述连接铜排与所述压接端之间的部位,所述连接铜排压接在所述第一绝缘压板上。Preferably, a first insulating pressure plate is inserted and fitted on the pressure rod, a first through hole is formed on the first insulating pressure plate, the pressure rod is connected in the first through hole by interference, and the first through hole is formed on the first insulating pressure plate. An insulating pressing plate is located on the pressing rod at a position between the connecting copper bar and the crimping end, and the connecting copper bar is crimped on the first insulating pressing plate.
通过采用上述技术方案,第一绝缘压板可以在固定压杆与连接铜排之间的相对位置,第一绝缘压板采用金属板还能缓解压杆与连接铜排上的尖端电荷聚集程度,利于降低杂感。By adopting the above technical solution, the first insulating pressure plate can be fixed at the relative position between the pressure rod and the connecting copper bar, and the use of a metal plate for the first insulating pressure plate can also alleviate the accumulation of tip charges on the pressure rod and the connecting copper bar, which is conducive to reducing the mixed feelings.
作为优选,所述第一绝缘压板上设有容纳所述连接铜排的第一容纳槽。Preferably, the first insulating pressure plate is provided with a first accommodating groove for accommodating the connecting copper bar.
通过采用上述技术方案,第一容纳槽容纳连接铜排后能够包围连接铜排的至少两个侧面,能固定连接铜排与压杆之间的相对姿态,利于连接铜排与压杆之间的固定连接。By adopting the above technical solution, after accommodating the connecting copper bar, the first accommodating groove can surround at least two sides of the connecting copper bar, and can fix the relative posture between the connecting copper bar and the pressing rod, which is beneficial to the connection between the connecting copper bar and the pressing rod. Fixed connection.
作为优选,所述第一绝缘压板配合有第二绝缘压板,所述第二绝缘压板上开设有第二过孔,所述压杆远离所述压接端的一端插接在所述第二过孔内,所述第二绝缘压板与所述第一绝缘压板将所述连接铜排夹在中间或夹紧。Preferably, the first insulating pressure plate is matched with a second insulating pressure plate, a second through hole is formed on the second insulating pressure plate, and an end of the pressure rod away from the crimping end is inserted into the second through hole Inside, the second insulating pressure plate and the first insulating pressure plate sandwich or clamp the connecting copper bar.
通过采用上述技术方案,第一绝缘压板与第二绝缘压板配合后可以在压杆上夹紧连接铜排,同时还能包围连接铜排,利于固定连接铜排在压杆上的位置。By adopting the above technical solution, the first insulating pressing plate and the second insulating pressing plate can clamp the connecting copper bar on the pressing rod, and can also surround the connecting copper bar, which is beneficial to fix the position of the connecting copper bar on the pressing rod.
作为优选,所述第二绝缘压板上设有容纳所述连接铜排的第二容纳槽。Preferably, the second insulating pressure plate is provided with a second accommodating groove for accommodating the connecting copper bar.
通过采用上述技术方案,第二容纳槽容纳连接铜排后能够包围连接铜排的至少两个侧面,利于固定连接铜排与压杆之间的相对姿态。By adopting the above technical solution, after accommodating the connecting copper bar, the second accommodating groove can surround at least two side surfaces of the connecting copper bar, which is beneficial to fix the relative posture between the connecting copper bar and the pressing rod.
作为优选,所述连接铜排设有多个,所述第一容纳槽与所述第二容纳槽错位设置。Preferably, there are a plurality of the connecting copper bars, and the first accommodating groove and the second accommodating groove are arranged in a staggered position.
通过采用上述技术方案,多个连接铜排可以连接测试电容不同的端子,还能让一套装置测试多个碳化硅开关器件。By adopting the above technical solution, a plurality of connecting copper bars can be connected to terminals with different test capacitances, and a set of devices can also be used to test a plurality of silicon carbide switching devices.
综上所述,本申请至少包括以下有益技术效果:使用符合设定姿态关系与预设位置关系的连接铜排与压杆,降低测试回路的杂感,以符合碳化硅开关器件的测试要求。利用带有第一容纳槽的第一绝缘压板与带有第二容纳槽的第二绝缘压板,在利于连接铜排与压杆之间的姿态与位置成型的同时,利于降低测试回路中的杂感,从而使碳化硅开关器件的测试结果更精准。To sum up, the present application at least includes the following beneficial technical effects: the use of connecting copper bars and pressure rods that conform to the set attitude relationship and the preset position relationship reduces the clutter of the test loop to meet the test requirements of silicon carbide switching devices. The use of the first insulating pressure plate with the first accommodating groove and the second insulating pressure plate with the second accommodating groove facilitates the formation of the posture and position between the copper bar and the pressure rod, and at the same time helps to reduce the noise in the test circuit , so that the test results of silicon carbide switching devices are more accurate.
附图说明Description of drawings
图1是碳化硅开关器件测试装置的整体结构示意图;1 is a schematic diagram of the overall structure of a silicon carbide switching device testing device;
图2是展示连接铜排、压杆以及第一绝缘压板的放大结构示意图;FIG. 2 is an enlarged schematic view showing the connecting copper bar, the pressing rod and the first insulating pressing plate;
图3是图1中的A部放大结构示意图。FIG. 3 is an enlarged structural schematic diagram of part A in FIG. 1 .
附图标记:10、测试电容;11、第一电极;12、第二电极;20、自动化夹具;30、连接铜排;40、压杆;41、压接端;50、第一绝缘压板;51、第一过孔;52、第一容纳槽;60、第二绝缘压板;61、第二过孔;62、第二容纳槽。Reference numerals: 10, test capacitance; 11, first electrode; 12, second electrode; 20, automated fixture; 30, connecting copper bar; 40, pressing rod; 41, crimping end; 50, first insulating pressing plate; 51, the first via hole; 52, the first accommodating slot; 60, the second insulating pressure plate; 61, the second via hole; 62, the second accommodating slot.
具体实施方式Detailed ways
以下结合附图1-3对本申请作进一步详细说明。The present application will be further described in detail below in conjunction with accompanying drawings 1-3.
现有技术中,碳化硅开关器件的测试回路包括测试电容10、自动化夹具20以及待测试的碳化硅开关器件,自动化夹具20包括第一部分与第二部分,测试电容10、自动化夹具20以及待测试的碳化硅开关器件。传统手动的测试回路由测试电容10、待测试的碳化硅开关器件组成,现有自动的测试回路由测试电容10、第一部分、待测试的碳化硅开关器件以及第二部分构成,相比于传动手动的测试回路,第一部分与第二部分给测试回路带来了更多的杂感。In the prior art, a test loop of a silicon carbide switching device includes a
本申请实施例公开一种碳化硅开关器件测试装置,能够降低自动化夹具20给测试回路带来的更多的杂感。参照图1与图2,一种碳化硅开关器件测试装置包括连接铜排30、多个压杆40、第一绝缘压板50与第二绝缘压板60。测试电容10有两个片状且错位设置的电极为第一电极11与第二电极12,两个电极相互平行设置,连接铜排30被螺栓压紧在电极上。连接铜排30与电极设有贯通的孔,螺栓穿过孔并固定连接铜排30与电极,以及实现连接铜排30与电极之间的电连接。在其它的一些实施例中,连接铜排30可焊接在电极上实现固定与电连接。The embodiment of the present application discloses a silicon carbide switching device testing device, which can reduce more miscellaneous inductances brought by the
压杆40焊接在连接铜排30远离电极的一端,且连接铜排30位于压杆40的中间部位,焊接可采用锡焊,连接铜排30与压杆40焊接的部位包围压杆40。连接铜排30用于压紧碳化硅开关器件的端子的一端为压接端41,压接端41设有压接尖端,压接尖端可直接在压接端41上成型或者为可拆卸连接或固定连接在压接端41上的装配体。压接尖端用于压紧碳化硅开关器件的端子,压紧尖端可为端部渐缩的锥状体,也可为具有多个锯齿尖端的尖端体或管状体,压紧尖端压紧碳化硅开关器件的端子后具有更高的压强,压接得更紧固。The
经过仿真和实测,多个压杆40平行设置且并联电连接于同一个连接铜排30,可提高压杆40对碳化硅开关器件的端子的压紧效果,还能降低杂感,在实测的案例中,多个压杆40并联后的测试回路比单个压杆40的测试回路降低了2nH。连接铜排30与压接端41之间的距离不同,测试回路中的杂感不同。连接铜排30距离压接端41越远,其所在的测试回路中的杂感越大。在实测的案例中,连接铜排30与压接端41之间的距离提升14mm,则测试回路中的杂感提升8nH。连接铜排30与压接端41之间的距离可为0~14mm,也可更大。经过仿真和实测,连接铜排30与压接端41之间的姿态不同,测试回路中的杂感也不同。连接铜排30与压接端41之间的姿态越接近于垂直,其所在的测试回路中的杂感越小。两个连接铜排30或测试电容的两个电极越接近,测试回路中的杂感越小。After simulation and actual measurement, a plurality of
如图2与图3所示,第一绝缘压板50与第二绝缘压板60相互配合设置,第一绝缘压板50上设有多个供压杆40穿过的第一过孔51,压杆40过盈连接在第一过孔51中,第二绝缘压板60上设有供压杆40穿过的第二过孔61,第一过孔51与第二过孔61的位置对应,同一根压杆40穿过位置对应的第一过孔51与第二过孔61。第二绝缘压板60通过胶粘、热熔焊接或者螺栓固定连接在自动化夹具20上,第一绝缘压板50也可通过胶粘、热熔焊接或者螺栓固定连接在第二绝缘压板60上。As shown in FIG. 2 and FIG. 3 , the first insulating
装配第一绝缘压板50与第二绝缘压板60的过程如下:压杆40上远离压接端41的一端穿过第一过孔51,让压杆40过盈连接在第一绝缘压板50上,连接铜排30上设有供压杆40穿过的孔,将连接铜排30从压杆40上远离压接端41的一端穿在压杆40上。第一绝缘压板50设有容纳连接铜排30的第一容纳槽52,第一容纳槽52的开口背离压接端41,将连接铜排30压在第一容纳槽52内,在连接铜排30远离第一绝缘压板50的一侧通过锡焊焊接连接铜排30与压杆40。第一电极11所连的压杆40穿过第一容纳槽52,而第二电极12所连的压杆40未穿过第一容纳槽52,未穿过第一容纳槽52的压杆40所连的连接铜排30贴合在第一绝缘压板50的表面。将第二绝缘压板60从压杆40远离压接端41的一端插接在压杆40上并压紧连接铜排30,第二绝缘压板60上设有第二容纳槽62,第二容纳槽62的位置对应于第二电极12所连的连接铜排30并容纳该连接铜排30。在自动化夹具20上的连接铜排30有多个,同时,第一容纳槽52与第二容纳槽62之间的位置可相对应或者错位,第二容纳槽62也可位于第一容纳槽52内将连接铜排30包围,或者第一容纳槽52也可位于第二容纳槽62内将连接铜排30包围。最后,固定第一绝缘压板50与第二绝缘压板60之间的相对位置。The process of assembling the first insulating pressing
本申请实施例一种碳化硅开关器件测试装置的实施原理为:压杆40并联且相互平行设置,让多个压杆40上的杂感分布更为均匀,有利于降低测试回路的总杂感。连接铜排30包围压杆40且焊接路径也包围压杆40,能够让聚集在连接铜排30与压杆40之间连接部位的电荷得到分散,缓解压杆40与连接铜排30之间连接点处尖端的电荷聚集程度,利于降低测试回路的总杂感。使用符合设定姿态关系与预设位置关系的连接铜排30与压杆40,降低测试回路的杂感,以符合碳化硅开关器件的测试要求。第一绝缘压板50与第二绝缘压板60将连接铜排30压紧后,不仅利于保持连接铜排30与压杆40之间的姿态关系与位置关系,还能提高缓解压杆40与连接铜排30上的尖端电荷聚集程度的效果,从而使碳化硅开关器件的测试结果更精准。The implementation principle of a silicon carbide switching device testing device according to an embodiment of the present application is as follows: the
以上均为本申请的较佳实施例,并非依此限制本申请的保护范围,故:凡依本申请的结构、形状、原理所做的等效变化,均应涵盖于本申请的保护范围之内。The above are all preferred embodiments of the present application, and are not intended to limit the protection scope of the present application. Therefore: all equivalent changes made according to the structure, shape and principle of the present application should be covered within the scope of the present application. Inside.
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