CN115029787B - Device for annealing silicon carbide single crystal - Google Patents
Device for annealing silicon carbide single crystal Download PDFInfo
- Publication number
- CN115029787B CN115029787B CN202210857263.9A CN202210857263A CN115029787B CN 115029787 B CN115029787 B CN 115029787B CN 202210857263 A CN202210857263 A CN 202210857263A CN 115029787 B CN115029787 B CN 115029787B
- Authority
- CN
- China
- Prior art keywords
- induction heating
- heating part
- graphite
- induction
- wall thickness
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 84
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 46
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 46
- 238000000137 annealing Methods 0.000 title claims abstract description 42
- 230000006698 induction Effects 0.000 claims abstract description 193
- 238000010438 heat treatment Methods 0.000 claims abstract description 168
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 92
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 92
- 239000010439 graphite Substances 0.000 claims abstract description 92
- 238000005336 cracking Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000002500 effect on skin Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 239000007770 graphite material Substances 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012774 insulation material Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000001681 protective effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 230000006978 adaptation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/02—Heat treatment
Landscapes
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The application provides a device for annealing silicon carbide single crystals, which comprises a graphite induction heater, wherein the graphite induction heater is arranged at the central position of a heating zone surrounded by an induction heating coil, is of a hollow cylindrical structure and is internally used for placing the silicon carbide single crystals; along the axial direction of the graphite induction heater, the side wall of the graphite induction heater is divided into a first induction heating part, a second induction heating part and a third induction heating part; the wall thickness of the second induction heating part is larger than that of the first induction heating part and the third induction heating part, and the wall thickness of the second induction heating part or the sum of the wall thicknesses of the second induction heating part and a graphite crucible arranged inside the graphite induction heater is larger than the skin depth of graphite induction heating. Therefore, a temperature field with small temperature gradient can be constructed in the whole axial direction inside the graphite induction heater, so that the temperature difference in the axial direction of the crystal is reduced, and the residual stress inside the silicon carbide crystal can be eliminated to a great extent.
Description
Technical Field
The application relates to the technical field of semiconductor material preparation, in particular to a device for annealing silicon carbide single crystals.
Background
Silicon carbide is used as a representative of third-generation semiconductor materials, and has the characteristics of large band gap, high heat conductivity, high critical breakdown field strength, high saturated electron drift rate and the like, so that the silicon carbide has great application potential in the fields of power transmission, rail transit, electric automobiles, 5G communication and the like.
The most mature method for growing silicon carbide crystal is physical gas phase transmission method, in the process of growing silicon carbide crystal, because the temperature gradient of the temperature field is large or the temperature is reduced quickly after the crystal growth is completed, the crystal is internally provided with larger residual stress, the crystal is cracked when the residual stress is too large, and the internal residual stress is increased along with the expansion of the size of the silicon carbide crystal, so that it is very important to reduce the internal residual stress of the crystal to prevent the crystal from cracking.
High temperature annealing is an effective means for reducing residual stress in the silicon carbide crystal, but in high temperature annealing, if the axial temperature gradient in the annealing crucible is large, it is difficult to reduce residual stress in the crystal by high temperature annealing means.
Disclosure of Invention
In order to achieve high temperature annealing of a crystal with a small axial temperature gradient, the application provides a device for annealing a silicon carbide single crystal.
According to a first aspect of an embodiment of the present application, there is provided an apparatus for annealing a silicon carbide single crystal, the apparatus comprising a graphite induction heater, wherein:
during single crystal annealing, the graphite induction heater is placed at the center of a heating area surrounded by the induction heating coil;
The graphite induction heater is of a hollow cylindrical structure, and the inside of the graphite induction heater is used for placing silicon carbide single crystals;
Along the axial direction of the graphite induction heater, the side wall of the graphite induction heater is divided into a first induction heating part, a second induction heating part and a third induction heating part;
the wall thickness of the second induction heating part is larger than the wall thickness of the first induction heating part and the wall thickness of the third induction heating part, and the wall thickness of the second induction heating part is larger than the skin depth of graphite induction heating.
Optionally, along an axial direction of the graphite induction heater, the second induction heating portion is a first sub-induction heating portion, a second sub-induction heating portion, and a third sub-induction heating portion, wherein:
The wall thickness of the second sub-induction heating part is larger than that of the first sub-induction heating part and the third sub-induction heating part;
the wall thickness of the first sub-induction heating part and the wall thickness of the third sub-induction heating part are equal or approximately equal.
Optionally, the wall thickness of the first and third induction heating sections is equal or approximately equal.
Optionally, the wall thickness of the second induction heating section is tapered from the center to both ends.
Optionally, a multi-layer crystal support plate is further arranged in the graphite induction heater, and the crystal support plate is movably arranged in the crucible body along the axial direction of the graphite induction heater.
According to a second aspect of embodiments of the present application, there is provided another apparatus for annealing a silicon carbide single crystal, the apparatus comprising a graphite induction heater and a heating crucible, wherein:
The graphite induction heater is of a circular cylinder structure and is used for being sleeved outside the heating crucible;
The heating crucible comprises a crucible cover and a hollow crucible body, and the inside of the heating crucible is used for placing silicon carbide single crystals;
Along the axial direction of the graphite induction heater, the side wall of the graphite induction heater is divided into a first induction heating part, a second induction heating part and a third induction heating part;
the wall thickness of the second induction heating part is larger than the wall thickness of the first induction heating part and the wall thickness of the third induction heating part, and the sum of the wall thickness of the second induction heating part and the wall thickness of the crucible body is larger than the skin depth of graphite induction heating.
Optionally, a multi-layer crystal support plate is further disposed in the heating crucible, and the crystal support plate is movably disposed in the crucible along the axial direction of the crucible.
Optionally, the wall thickness of the second induction heating part is 15-25 mm, and the wall thickness of the first induction heating part and the third induction heating part is 5-15 mm.
Optionally, the thickness of the crucible cover is 10-30 mm, and the wall thickness of the crucible body is 10-20 mm.
According to the device for annealing the silicon carbide single crystal, the graphite induction heater is made of graphite materials, and when a graphite piece is in an induction heating mode, skin effect exists, namely graphite with a certain thickness on the side wall of the graphite induction heater participates in induction heating, the part exceeding the skin depth does not participate in induction heating, and the part of the thickness transmits heat in a heat conduction mode. When the single crystal is annealed, the graphite induction heater is placed at the central position of the heating area surrounded by the induction heating coils, so that the central position of the graphite induction heater is the highest theoretical temperature point, but the wall thickness of the second induction heating part of the graphite induction heater is larger than that of the first induction heating part and the third induction heating part, and the wall thickness of the second induction heating part or the sum of the wall thickness of the side wall of the second induction heating part and the wall thickness of the crucible body is larger than the skin depth of the graphite induction heating, namely, the central position of the graphite induction heater is higher than the heat consumed by heat conduction at the two end positions, so that the temperature difference between the center of the graphite induction heater and the two ends of the graphite induction heater can be reduced, and a temperature field with small temperature gradient can be constructed in the whole axial direction inside the graphite induction heater at the moment. And the Wen Changxia with small axial temperature gradient is subjected to high-temperature annealing, a plurality of crystals can be placed for annealing, and the temperature difference in the axial direction of the crystals is small, so that the residual stress in the silicon carbide crystals can be eliminated to a great extent, and the cracking of the crystals is prevented.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the invention and together with the description, serve to explain the principles of the invention.
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, and it will be obvious to a person skilled in the art that other drawings can be obtained from these drawings without inventive effort.
FIG. 1 is a schematic view showing the basic structure of an apparatus for annealing a silicon carbide single crystal according to a first embodiment of the present application;
FIG. 2 is a schematic view showing the basic structure of an apparatus for annealing a silicon carbide single crystal according to a second embodiment of the present application;
FIG. 3 is a schematic view showing the basic structure of an apparatus for annealing a silicon carbide single crystal according to a third embodiment of the present application;
FIG. 4 is a schematic view showing an assembly of a silicon carbide single crystal annealed by the apparatus of FIG. 3.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The implementations described in the following exemplary examples do not represent all implementations consistent with the invention. Rather, they are merely examples of apparatus and methods consistent with aspects of the invention as detailed in the accompanying claims.
The device for annealing the silicon carbide single crystal provided by the embodiment of the application has a temperature field with small axial temperature gradient, so that the large-size silicon carbide crystal is annealed in the temperature field with small temperature gradient, the residual stress in the crystal can be effectively reduced, and the crystal cracking is prevented.
Fig. 1 is a schematic view showing the basic structure of an apparatus for annealing a silicon carbide single crystal according to an embodiment of the present application. As shown in fig. 1, the apparatus includes a graphite induction heater 10.
The graphite induction heater 10 has a hollow cylindrical structure, and is internally provided with a silicon carbide single crystal. Along the axial direction of the graphite induction heater 10, the side wall of the graphite induction heater 10 is divided into a first induction heating section 11, a second induction heating section 12, and a third induction heating section 13. The wall thickness of the second induction heating part 12 is larger than the wall thickness of the first induction heating part 11 and the third induction heating part 13, and the wall thickness of the first induction heating part 12 is larger than the skin depth of graphite induction heating; to maintain the symmetry of the temperature field, the wall thickness and the height of the first induction heating section 11 and the third induction heating section 13 are designed to be equal or approximately equal.
In order to place more silicon carbide crystals, a plurality of layers of crystal support plates 20 are further arranged in the graphite induction heater 10, the crystal support plates 20 can also be made of graphite materials, the crystal support plates 20 are movably arranged in the graphite induction heater 10 along the axial direction, each layer of crystal support plates 20 can be used for placing 1 to 2 crystals, and a plurality of crystals can be placed in the crystal support plates.
Because graphite induction heater 10 adopts graphite material to make, when graphite spare adopts the induction heating mode, because there is skin effect, promptly at the side wall of graphite induction heater 10 certain thickness graphite participated in induction heating, surpass the part of skin degree of depth and do not participated in induction heating, this part thickness passes the heat through the mode of thermal conduction. At the time of single crystal annealing, since the graphite induction heater 10 is placed at the central position of the heating zone surrounded by the induction heating coil, the central position of the graphite induction heater 10 is the theoretical highest temperature point, but since the wall thickness of the second induction heating part 12 of the graphite induction heater 10 is larger than the wall thickness of the first induction heating part 11 and the wall thickness of the third induction heating part 13 and the wall thickness of the second induction heating part 12 is larger than the skin depth of graphite induction heating, the part of the second induction heating part 12 participating in heat conduction is more than the first induction heating part 11 and the third induction heating part 13, namely, the heat consumed by heat conduction at the central position of the graphite induction heater 10 is higher, and the temperature difference at the two ends of the graphite induction heater 10 can be reduced, so that a temperature field with small temperature gradient can be constructed in the whole axial direction inside the graphite induction heater 10.
And the Wen Changxia with small axial temperature gradient is subjected to high-temperature annealing, a plurality of crystals can be placed for annealing, and the temperature difference in the axial direction of the crystals is small, so that the residual stress in the silicon carbide crystals can be eliminated to a great extent, and the cracking of the crystals is prevented.
Fig. 2 is a schematic view showing a basic structure of an apparatus for annealing a silicon carbide single crystal according to a second embodiment of the present application. As shown in fig. 2, the graphite induction heater 10 in the present embodiment is mainly different from the first embodiment in that, in the axial direction of the graphite induction heater, the second induction heating section 12 is divided into a first sub-induction heating section 121, a second sub-induction heating section 122 and a third sub-induction heating section 123,
Wherein the wall thickness of the second sub-induction heating part 122 is larger than the wall thickness of the first sub-induction heating part 121 and the third sub-induction heating part 123, and the wall thicknesses of the first sub-induction heating part 121 and the third sub-induction heating part 123 are equal or approximately equal. In this embodiment, the second induction heating portion 12 is divided into a three-section structure, that is, the entire graphite induction heater is of a five-section structure, so that the axial temperature gradient can be further reduced, and a temperature field structure with a small temperature gradient or even without a temperature gradient can be constructed. Of course, in other embodiments, the second induction heating part 12 may be divided into more sections, and the first induction heating part 11 and the third induction heating part 13 may be designed as a multi-section structure.
In addition to the design of the second induction heating section 12 as a multi-stage structure, the thickness of the second induction heating section may be gradually reduced from the center to both ends. Of course, the first induction heating unit 11 and the third induction heating unit 13 may be configured to be gradually thinner from the center to the end of the graphite induction heater 10.
Fig. 3 is a schematic view showing the basic structure of an apparatus for annealing a silicon carbide single crystal according to a third embodiment of the present application. As shown in fig. 3, the apparatus includes a graphite induction heater 10 and a heating crucible 30 in comparison with the first embodiment, i.e., the graphite induction heater of the first embodiment is designed to be composed of an inner part and an outer part.
The graphite induction heater 10 is a circular cylinder with two open ends, and is sleeved outside the heating crucible 30, and of course, the graphite induction heater 10 may be a circular cylinder with one open end or a cylinder with two open ends. The graphite induction heater 10 and the heating crucible 30 are of a detachable structure. The heating crucible 30 includes a crucible cover 31 and a hollow crucible body 32, and of course, a lower cover type structure is also possible, and the inside of the heating crucible 30 is used for placing silicon carbide single crystals. In terms of dimension design, the second induction heating part of the middle part of the graphite induction heater 10 is also designed to have a wall thickness larger than that of the first induction heating part and the third induction heating part at the two ends, but the difference from the first embodiment is that the sum of the wall thicknesses of the side wall of the second induction heating part and the side wall of the crucible body is larger than the skin depth of graphite induction heating. In addition, in order to place more silicon carbide single crystals, a multi-layered crystal support plate 20 is also provided in the heating crucible 30, and the crystal support plate 20 is movably provided in the crucible body 32 in the axial direction of the crucible body 32.
FIG. 4 is a schematic view showing an assembly of a silicon carbide single crystal annealed by the apparatus of FIG. 3. As shown in fig. 4, the annealing system includes a closed chamber 60, and the chamber wall of the closed chamber 60 is generally made of a quartz tube. During single crystal annealing, the inside of the closed cavity 60 is filled with a protective gas, typically argon, but not limited to the protective gas, and the air pressure inside the closed cavity 60 is 40000-90000 Pa, so that silicon carbide crystals are not easy to sublimate and decompose in the air pressure range, and the air pressure inside the closed cavity 60 is controlled through an air inlet and an air outlet. The induction heating coil 70 provides an induction heating current to the graphite induction heater 10. The thermal insulation material 50 is sleeved outside the graphite induction heater 10 to play a role in thermal insulation, and is made of a graphite hard felt or a graphite soft felt, a temperature measuring hole is usually arranged in the center of the top of the thermal insulation material 50, the diameter of the temperature measuring hole is 10-20 mm, the temperature measuring hole is used for monitoring annealing temperature, and the annealing temperature is generally 2000-2500 ℃. The graphite induction heater 10 is made of high-density, high-purity and high-strength graphite, and in this embodiment, the wall thickness of the second induction heating section 12 of the graphite induction heater 10 is 15 to 25mm, and the wall thicknesses of the first induction heating section 11 and the third induction heating section 13 are 5 to 15mm. The heating crucible 30 is also made of high-density, high-purity and high-strength graphite, the thickness of the crucible cover is 10-30 mm, and the thickness of the crucible body is 10-20 mm. When the graphite piece adopts an induction heating mode, skin effect exists, namely graphite with a certain thickness in the graphite piece participates in induction heating, a thickness part exceeding the skin depth does not participate in induction heating, and heat is transferred through a heat conduction mode. The skin depth of the graphite piece induction heating is 15-25 mm, the wall thickness of the second induction heating part 12 is 15-25 mm, namely, the thickness is approximately equal to the skin depth, at the moment, the crucible body of the second induction heating part 12 does not participate in induction heating, only heat is conducted, and a part of heat loss exists in the process; the wall thickness of the first induction heating part 11 and the third induction heating part 13 is 5-15 mm and is smaller than the skin depth, at the moment, a part of the crucible body clung to the first induction heating part 11 and the third induction heating part 13 participates in induction heating, the thickness of the rest part participates in heat conduction, namely, the thickness of the upper part and the lower part of the crucible body participate in heat conduction is smaller than the thickness of the middle part of the crucible body, and at the moment, the heat consumed by the heat conduction of the upper part and the lower part of the crucible body is smaller than the middle part of the crucible body.
Therefore, when the annealing device provided by this embodiment is used for single crystal annealing, the middle part of the graphite induction heater 10 is the highest temperature point, the temperature of the upper and lower ends is gradually reduced, the heat consumed by heat conduction is high in the middle part of the crucible body, at this time, a temperature field with small temperature gradient is easily constructed in the whole axial direction of the inside of the crucible, and high temperature annealing is performed under such temperature field, so that residual stress in the silicon carbide crystal can be eliminated to a great extent, and crystal cracking is prevented.
In this specification, each embodiment is described in a progressive manner, and identical and similar parts of each embodiment are all referred to each other, and each embodiment mainly describes differences from other embodiments. Other embodiments of the application will be apparent to those skilled in the art from consideration of the specification and practice of the disclosure herein. This application is intended to cover any variations, uses, or adaptations of the application following, in general, the principles of the application and including such departures from the present disclosure as come within known or customary practice within the art to which the application pertains. It is intended that the specification and examples be considered as exemplary only, with a true scope and spirit of the application being indicated by the following claims.
It is to be understood that the application is not limited to the precise arrangements and instrumentalities shown in the drawings, which have been described above, and that various modifications and changes may be effected without departing from the scope thereof. The scope of the application is limited only by the appended claims.
Claims (8)
1. An apparatus for annealing a silicon carbide single crystal, the apparatus comprising a graphite induction heater, wherein:
during single crystal annealing, the graphite induction heater is placed at the center of a heating area surrounded by the induction heating coil;
The graphite induction heater is of a hollow cylindrical structure, and the inside of the graphite induction heater is used for placing silicon carbide single crystals;
Along the axial direction of the graphite induction heater, the side wall of the graphite induction heater is divided into a first induction heating part, a second induction heating part and a third induction heating part;
the wall thickness of the second induction heating part is larger than the wall thickness of the first induction heating part and the wall thickness of the third induction heating part, and the wall thickness of the second induction heating part is larger than the skin depth of graphite induction heating;
The wall thickness of the second induction heating part is 15-25 mm, and the wall thickness of the first induction heating part and the third induction heating part is 5-15 mm.
2. The apparatus for annealing a silicon carbide single crystal according to claim 1, wherein the second induction heating section is a first sub-induction heating section, a second sub-induction heating section, and a third sub-induction heating section in an axial direction of the graphite induction heater, wherein:
The wall thickness of the second sub-induction heating part is larger than that of the first sub-induction heating part and the third sub-induction heating part;
the wall thickness of the first sub-induction heating part and the wall thickness of the third sub-induction heating part are equal or approximately equal.
3. The apparatus for annealing of a silicon carbide single crystal according to claim 1, wherein the wall thickness of the first induction heating section and the third induction heating section are equal or approximately equal.
4. The apparatus for annealing of a silicon carbide single crystal according to claim 1, wherein a wall thickness of the second induction heating section becomes thinner gradually from the center to both ends.
5. The apparatus for annealing a silicon carbide single crystal according to claim 1, wherein a plurality of crystal support plates are further provided in the graphite induction heater, the crystal support plates being movably provided in the crucible body in an axial direction of the graphite induction heater.
6. An apparatus for annealing a silicon carbide single crystal, the apparatus comprising a graphite induction heater and a heated crucible, wherein:
The graphite induction heater is of a circular cylinder structure and is used for being sleeved outside the heating crucible;
The heating crucible comprises a crucible cover and a hollow crucible body, and the inside of the heating crucible is used for placing silicon carbide single crystals;
Along the axial direction of the graphite induction heater, the side wall of the graphite induction heater is divided into a first induction heating part, a second induction heating part and a third induction heating part;
The wall thickness of the second induction heating part is larger than the wall thickness of the first induction heating part and the wall thickness of the third induction heating part, and the sum of the wall thickness of the second induction heating part and the wall thickness of the crucible body is larger than the skin depth of graphite induction heating;
The wall thickness of the second induction heating part is 15-25 mm, and the wall thickness of the first induction heating part and the third induction heating part is 5-15 mm.
7. The apparatus for annealing a silicon carbide single crystal according to claim 6, wherein a plurality of crystal support plates are further provided in the heating crucible, the crystal support plates being movably provided in the crucible body in an axial direction of the crucible body.
8. The apparatus for annealing of a silicon carbide single crystal according to claim 6, wherein the thickness of the crucible cover is 10 to 30mm, and the wall thickness of the crucible body is 10 to 20mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210857263.9A CN115029787B (en) | 2022-07-20 | 2022-07-20 | Device for annealing silicon carbide single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210857263.9A CN115029787B (en) | 2022-07-20 | 2022-07-20 | Device for annealing silicon carbide single crystal |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN115029787A CN115029787A (en) | 2022-09-09 |
| CN115029787B true CN115029787B (en) | 2024-04-19 |
Family
ID=83128370
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210857263.9A Active CN115029787B (en) | 2022-07-20 | 2022-07-20 | Device for annealing silicon carbide single crystal |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN115029787B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115974571B (en) * | 2022-12-28 | 2023-11-24 | 湖南金博碳基材料研究院有限公司 | Heating tube device and preparation method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103564719A (en) * | 2012-07-21 | 2014-02-12 | 江苏省振新实业有限公司 | Soft easily-rolled short-sleeved T-shirt with rope |
| CN109234800A (en) * | 2018-11-02 | 2019-01-18 | 山东天岳先进材料科技有限公司 | A kind of adjustable thermal field structure being used to prepare single-crystal silicon carbide |
| CN113564719A (en) * | 2021-07-26 | 2021-10-29 | 河北天达晶阳半导体技术股份有限公司 | Secondary annealing method of silicon carbide crystals |
| CN114369875A (en) * | 2020-10-15 | 2022-04-19 | 广州南砂晶圆半导体技术有限公司 | Device for annealing silicon carbide wafer |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5069657B2 (en) * | 2008-09-26 | 2012-11-07 | 株式会社ブリヂストン | Silicon carbide single crystal manufacturing apparatus and silicon carbide single crystal manufacturing method |
-
2022
- 2022-07-20 CN CN202210857263.9A patent/CN115029787B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103564719A (en) * | 2012-07-21 | 2014-02-12 | 江苏省振新实业有限公司 | Soft easily-rolled short-sleeved T-shirt with rope |
| CN109234800A (en) * | 2018-11-02 | 2019-01-18 | 山东天岳先进材料科技有限公司 | A kind of adjustable thermal field structure being used to prepare single-crystal silicon carbide |
| CN114369875A (en) * | 2020-10-15 | 2022-04-19 | 广州南砂晶圆半导体技术有限公司 | Device for annealing silicon carbide wafer |
| CN113564719A (en) * | 2021-07-26 | 2021-10-29 | 河北天达晶阳半导体技术股份有限公司 | Secondary annealing method of silicon carbide crystals |
Also Published As
| Publication number | Publication date |
|---|---|
| CN115029787A (en) | 2022-09-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN115029787B (en) | Device for annealing silicon carbide single crystal | |
| EP0899777B1 (en) | Carbon heater | |
| CN103153852B (en) | The method of graphitizing furnace and manufacture graphite | |
| US10034331B2 (en) | Controlled electric induction heating of an electrically conductive workpiece in a solenoidal coil with flux compensators | |
| WO2014035490A2 (en) | System for insulating an induction vacuum furnace and method of making same | |
| KR102163489B1 (en) | Growth device for single crystal | |
| KR20200044729A (en) | Large size high purity silicon carbide single crystal, substrate and its manufacturing method and manufacturing device | |
| TWI443198B (en) | Annealing method of amorphous core | |
| JP6686128B2 (en) | Glass forming apparatus and method | |
| EP4549638A1 (en) | Apparatus and method for growing high-quality silicon carbide crystals | |
| JP6628640B2 (en) | Apparatus and method for producing silicon carbide single crystal ingot | |
| JP2020093975A (en) | Crystal growth apparatus and crucible | |
| WO2024164911A1 (en) | Magnetic control coil and crystal fabrication apparatus | |
| CN113337896A (en) | Support electrode, heater and single crystal furnace | |
| KR101550282B1 (en) | Method for producing graphite film by using single continuous furnace | |
| CN219301324U (en) | Heat abstractor of interior cluster graphitization stove | |
| JP7577649B2 (en) | DEPOSITION REACTOR HAVING INDUCTOR AND ELECTROMAGNETIC SHIELD - Patent application | |
| CN110039032B (en) | Method for high-pressure directional growth of high-strength aluminum alloy | |
| CN113550002A (en) | Method and structure for fixing silicon carbide seed crystal | |
| CN114686671B (en) | Flexible liner for heat treatment of magnetic alloy rings | |
| ES2233079T3 (en) | STEEL BAND THERMAL TREATMENT PROCEDURE. | |
| CN110499532A (en) | Device for rapid preparation of silicon carbide | |
| JP2021084827A (en) | HEAT TRANSFER MEMBER FOR SiC SINGLE CRYSTAL GROWTH, CRUCIBLE FOR SIC SINGLE CRYSTAL GROWTH AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL | |
| CN222567723U (en) | Carbon nano tube preoxidation furnace device | |
| JP4050891B2 (en) | Method for producing glassy carbon pipe and core for producing glassy carbon pipe |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |