CN115020548A - A silicon wafer texturing device and a texturing process - Google Patents

Abstract

The embodiment of the application provides a silicon wafer texturing device and a texturing process, and belongs to the field of solar cell manufacturing. The silicon wafer texturing device comprises a plurality of texturing grooves which are distributed in series, the service lives of the texturing grooves are different, and the problem that the uniformity of a pyramid formed on the surface of a silicon wafer is poor can be solved through the device, so that the photoelectric conversion efficiency of the silicon wafer is guaranteed, and meanwhile, the influence on the subsequent deposition coating process can be avoided. In addition, the embodiment of the application also provides a texturing process.

Description

A silicon wafer texturing device and a texturing process

technical field

The present application relates to the field of solar cell manufacturing, and in particular, to a silicon wafer texturing device and a texturing process.

Background technique

In the prior art, the texturing of silicon wafers is generally carried out by immersing the silicon wafers in a texturing tank containing a texturing liquid. However, the texturing liquid in the texturing tank will change over time due to the concentration of the texturing liquid As time goes by, the reflectivity of the pyramid formed on the surface of the silicon wafer gradually increases, which in turn reduces the photoelectric conversion efficiency of the silicon wafer. At the same time, the poor uniformity of the pyramid formed on the surface of the silicon wafer will also lead to subsequent deposition and coating processes influences.

SUMMARY OF THE INVENTION

The purpose of this application is to provide a silicon wafer texturing device and a texturing process, which can improve the problem of poor uniformity of the pyramids formed on the surface of the silicon wafer, thereby ensuring the photoelectric conversion efficiency of the silicon wafer, and at the same time, it can also avoid subsequent The deposition coating process is affected.

The embodiments of the present application are implemented as follows:

In a first aspect, an embodiment of the present application provides a silicon wafer texturing device, which includes a plurality of texturing grooves distributed in series, and the service lives of the plurality of texturing grooves are different.

In the above technical solution, multiple texturing grooves are distributed in series (when one texturing is completed through the multiple texturing grooves in turn, it is equivalent to dividing one texturing into multiple stages), compared with only one texturing groove is provided. It can reduce the texturing time of silicon wafers in one texturing tank, so that the concentration of texturing liquid in each texturing tank is basically maintained at a relatively stable In order to ensure the uniformity of the pyramid formed on the surface of the silicon wafer, the photoelectric conversion efficiency of the silicon wafer can be ensured. At the same time, since the uniformity of the pyramid formed on the surface of the silicon wafer is guaranteed, the subsequent deposition and coating process can be avoided. In addition, the service lives of the plurality of texturing grooves are different, so that the service lives of the plurality of texturing grooves are arranged according to a certain rule, thereby ensuring the continuity of the texturing process.

In some optional embodiments, the silicon wafer texturing device further includes a circulation groove, and the service life of the circulation groove is shorter than the service life of the texturing groove with the smallest service life among the plurality of texturing grooves.

In the above technical solution, the silicon wafer texturing device adds a circulation groove, and sets the service life of the circulation groove to the minimum state, so that when the texturing groove with the longest service life reaches the upper limit of the service life (that is, the When the texturing liquid can no longer be used for silicon wafer texturing), by removing the texturing groove whose service life reaches the upper limit and adding a circulating groove to ensure the integrity of the texturing function of the silicon wafer texturing device, it can continue to be carried out. Compared with the method of restarting the silicon wafer texturing after changing the texturing liquid, the silicon wafer texturing can save the texturing time and improve the silicon wafer texturing efficiency.

In some optional embodiments, the number of texturing grooves is 2-4.

In the above technical solution, the number of the texturing grooves is limited within the range of 2 to 4 (that is, one texturing is divided into 2 to 4 stages), which can ensure that the pyramid formed on the surface of the silicon wafer has good uniformity, and at the same time , and can also control the footprint of the silicon wafer texturing device to a suitable size.

In some optional embodiments, a plurality of texturing grooves are distributed in series along the conveying direction of the silicon wafer, and the service life of the plurality of texturing grooves increases or decreases sequentially from upstream to downstream along the conveying direction of the silicon wafer.

In the above technical solution, the service life of the texturing tank increases or decreases sequentially from upstream to downstream along the transmission direction of the silicon wafer (that is, the concentration of the texturing liquid in the multiple texturing tanks distributed in series decreases or increases in turn), compared with In the case where the service life of the plurality of texturing grooves is not regular, the uniformity of the pyramid formed on the surface of the silicon wafer can be further improved.

In some optional embodiments, in the transport direction of the silicon wafers, a water washing tank is further arranged between any two adjacent texturing tanks.

In the above technical solution, a water washing tank is added between adjacent texturing tanks, which can improve the cleanliness of the silicon wafers compared with the situation without the water washing tanks, thereby ensuring the quality of the silicon wafers obtained by the texturing process.

In a second aspect, an embodiment of the present application provides a texturing process, using the silicon wafer texturing device provided by the embodiment of the first aspect for texturing, including the following steps:

In each texturing cycle, each batch of silicon wafers is textured in each texturing groove for a preset time; and after one texturing cycle is completed, a circulating groove is used instead of multiple texturing grooves. The texturing trough with the shortest life span will then proceed to the next texturing cycle according to the texturing sequence of the previous texturing cycle.

In the above technical solution, using the silicon wafer texturing device provided by the first aspect embodiment for texturing can make one texturing quilt divided into multiple stages, which is equivalent to reducing the texturing time of the silicon wafer in one texturing groove. The concentration of the texturing solution in each texturing tank is basically maintained in a relatively stable state, thereby ensuring the uniformity of the pyramids formed on the surface of the silicon wafer, thereby ensuring the photoelectric conversion efficiency of the silicon wafer. At the same time, since the uniformity of the pyramid formed on the surface of the silicon wafer is guaranteed, the subsequent deposition and coating process can also be prevented from being affected. In addition, the texturing sequence of the next texturing cycle is performed according to the texturing sequence of the previous texturing cycle, which can ensure that the pyramids formed on the surface of the silicon wafer in all texturing cycles have good uniformity during the texturing process.

In some optional embodiments, the service life of the texturing grooves through which the silicon wafers pass sequentially increases.

In the above technical solution, the service life of the plurality of texturing grooves is set according to the law of increasing sequentially. Compared with the case where the service life of the plurality of texturing grooves is irregular, the uniformity of the pyramids formed on the surface of the silicon wafer can be further improved. sex.

In some alternative embodiments, the initial composition and initial concentration of the texturing liquor in each texturing tank are the same.

In the above technical solution, the initial composition and initial concentration of the texturing liquid in the texturing tank are the same, which can make the chemical liquid environment in different texturing tanks more consistent, that is, the chemical liquid environment in each stage of each texturing cycle. It is more consistent, thereby helping to improve the uniformity of the pyramids formed on the surface of the silicon wafer.

In some alternative embodiments, the processing temperature in each texturing tank is the same.

In the above technical solution, setting the processing temperature in the plurality of texturing grooves to the same condition can ensure the consistency of each stage of the texturing process, thereby helping to further improve the uniformity of the pyramids formed on the surface of the silicon wafer.

In some alternative embodiments, the treatment time in each texturing tank is the same.

In the above technical solution, setting the processing time in the multiple texturing grooves to the same situation can further ensure the consistency of each stage of the texturing process, and also help to improve the uniformity of the pyramids formed on the surface of the silicon wafer.

Description of drawings

In order to illustrate the technical solutions of the embodiments of the present application more clearly, the following drawings will briefly introduce the drawings that need to be used in the embodiments. It should be understood that the following drawings only show some embodiments of the present application, and therefore do not It should be regarded as a limitation of the scope, and for those of ordinary skill in the art, other related drawings can also be obtained according to these drawings without any creative effort.

FIG. 1 is a schematic structural diagram of a silicon wafer texturing device provided by an embodiment of the present application;

FIG. 2 is a schematic structural diagram of another silicon wafer texturing device provided by an embodiment of the present application;

3 is a schematic structural diagram of still another silicon wafer texturing device provided by an embodiment of the present application;

4 is a schematic diagram of the production process of a silicon wafer texturing device provided in the prior art;

FIG. 5 is a schematic diagram of the production process of the silicon wafer texturing device in FIG. 1;

FIG. 6 is a schematic diagram of the production process of the silicon wafer texturing device in FIG. 2;

Fig. 7 is the result graph of pyramid size test;

Figure 8 is a graph of the results of the pyramid reflectance test.

Icon: 10-wafer texturing device; 100-texturing tank; 110-first texturing tank; 120-second texturing tank; 130-third texturing tank; 200-circulation tank; 300-water washing tank;

a - The transport direction of the silicon wafer.

Detailed ways

To make the purposes, technical solutions and advantages of the embodiments of the present application more clear, the technical solutions in the embodiments of the present application will be described clearly and completely below. If the specific conditions are not indicated in the examples, it is carried out according to the conventional conditions or the conditions suggested by the manufacturer. The reagents or instruments used without the manufacturer's indication are conventional products that can be purchased from the market.

It should be noted that "and/or" in this application, such as "feature 1 and/or feature 2", all refer to "feature 1", "feature 2" and "feature 1" independently Add "feature 2" to the three cases.

In addition, in the description of this application, the range of "numerical value a to numerical value b" includes both ends "a" and "b", and the "measurement unit" in "numerical value a to numerical value b + measurement unit" represents "numerical value a" and the "unit of measure" for both "value b".

A silicon wafer texturing device and a texturing process according to an embodiment of the present application will be specifically described below.

In the prior art, the texturing of silicon wafers is generally performed by adding texturing liquid into the texturing tank, and then immersing the silicon wafers in the texturing liquid. However, the concentration of the texturing solution in the texturing tank will gradually decrease over time, so that the size of the formed pyramid will gradually increase, resulting in a gradual increase in the reflectivity and reflectivity of the pyramid formed on the surface of the silicon wafer. In the future, the sunlight that can be used by the silicon wafer will be reduced, which will lead to the reduction of the photoelectric conversion efficiency of the silicon wafer. At the same time, the size of the pyramid formed on the surface of the silicon wafer will change, which will lead to poor uniformity of the pyramid, which will also lead to subsequent deposition and coating. process is affected.

The inventor has found that, by adjusting the existing texturing device, one texturing can be divided into multiple stages, that is, the silicon wafer only needs to be textured for a short time in each texturing groove, which can make The concentration of the texturing liquid is relatively stable, thereby ensuring the uniformity of the pyramids formed on the surface of the silicon wafer.

Referring to FIG. 1 , in a first aspect, an embodiment of the present application provides a silicon wafer texturing device 10 , which includes a plurality of texturing grooves 100 distributed in series, and the service lives of the plurality of texturing grooves 100 are different.

In the present application, a plurality of texturing grooves 100 are distributed in series (when one texturing process is completed through the plurality of texturing grooves 100 in sequence, it is equivalent to dividing one texturing process into multiple stages), compared to only setting one texturing groove The form of the groove 100 (that is, one texturing is completed by one texturing groove 100) can reduce the texturing time of the silicon wafers in one texturing groove 100, so that the concentration of the texturing liquid in each texturing groove 100 is basically maintained. In a relatively stable state, the uniformity of the pyramid formed on the surface of the silicon wafer can be ensured, thereby ensuring the photoelectric conversion efficiency of the silicon wafer. At the same time, since the uniformity of the pyramid formed on the surface of the silicon wafer is guaranteed, subsequent deposition and coating can be avoided. process is affected. In addition, the service lives of the plurality of texturing grooves 100 are different, so that the service lives of the plurality of texturing grooves 100 are arranged according to a certain rule, so as to ensure the continuity of the texturing process.

It should be noted that the series distribution mentioned here refers to the arrangement of a plurality of texturing grooves 100 in sequence in a spatial sense alone, and has nothing to do with the arrangement rule of the service life of the texturing grooves 100 .

It should be noted that, after the texturing liquid is configured, it is generally possible to perform 100 to 150 times of texturing of silicon wafers from the first texturing, which means that the texturing liquid has a certain service life. The different service life refers to the use of different batches of texturing liquid.

It can be understood that since the texturing liquid has a certain service life, when the texturing liquid reaches the upper limit of the service life, the corresponding texturing tank 100 needs to be changed, and the liquid change means that the silicon wafer texturing device needs to be replaced. 10. Stop first, and then restart the silicon wafer texturing after the liquid is changed. This texturing method will lead to a waste of time to a certain extent, thus affecting the texturing efficiency.

Based on this, in order to save the texturing time and improve the texturing efficiency, the silicon wafer texturing device 10 can be optimized.

Referring to FIG. 2 , as an example, the silicon wafer texturing device 10 further includes a circulation groove 200 , and the service life of the circulation groove 200 is shorter than the service life of the texturing groove 100 with the smallest service life among the plurality of texturing grooves 100 .

In this embodiment, the silicon wafer texturing device 10 adds a circulation tank 200, and sets the service life of the circulation tank 200 to the minimum state, so that when the texturing tank 100 with the longest service life reaches the upper limit of the service life (that is, the system When the texturing liquid in the texturing tank 100 can no longer be used for silicon wafer texturing), by removing the texturing tank 100 whose service life reaches the upper limit and adding the circulating tank 200 to ensure the integrity of the texturing function of the silicon wafer texturing device 10 Compared with the method of restarting the silicon wafer texturing after changing the texturing liquid, it can save the texturing time and improve the silicon wafer texturing efficiency.

It should be noted that the number of the texturing grooves 100 is not specifically limited, and can be adjusted according to actual needs.

As an example, the number of the texturing grooves 100 is 2-4, such as but not limited to 2, 3 or 4 in number.

In this embodiment, the number of texturing grooves 100 is limited within the range of 2 to 4 (that is, one texturing is divided into 2 to 4 stages), so that the division of one texturing stage is more reasonable, so as to ensure that the silicon wafer can be divided into three stages. The pyramids formed on the surface have good uniformity, and at the same time, the footprint of the silicon wafer texturing device 10 can be controlled to a suitable size.

It should be noted that the arrangement rule of the service life of the plurality of texturing troughs 100 is not specifically limited.

As an example, the plurality of texturing grooves 100 are distributed in series along the transport direction a of the silicon wafer, and from upstream to downstream along the transport direction a of the silicon wafer, the service life of the multiple texturing grooves 100 increases or decreases sequentially.

In this embodiment, the service life of the texturing tank 100 increases or decreases sequentially from upstream to downstream along the transport direction a of the silicon wafers (that is, the concentration of the texturing liquid in the multiple texturing tanks 100 distributed in series decreases or increases sequentially). , compared with the case where the service life of the plurality of texturing grooves 100 is irregular, the uniformity of the pyramids formed on the surface of the silicon wafer can be further improved.

It should be noted that, the series distribution mentioned here refers to that in a texturing cycle, a plurality of texturing grooves 100 are arranged in sequence according to the size and law of service life, not only in a spatial sense.

Referring to FIG. 3 , as an example, in the conveying direction a of the silicon wafer, a water washing tank 300 is further provided between any two adjacent texturing tanks 100 .

In this embodiment, a water washing tank 300 is added between adjacent texturing tanks 100 , which can improve the cleanliness of the silicon wafers compared with the case where there is no water washing tank 300 , thereby ensuring the quality of the silicon wafers obtained by the texturing process.

In order to facilitate the understanding of the technical solution, the differences between the traditional silicon wafer texturing device 10 and the silicon wafer texturing device 10 provided by the present application are described here through specific examples:

Taking three texturing grooves 100 as an example, the three texturing grooves 100 are respectively represented as a first texturing groove 110 , a second texturing groove 120 and a third texturing groove 130 .

Referring to FIG. 4 , the conventional silicon wafer texturing device 10 distributes the first texturing groove 110 , the second texturing groove 120 and the third texturing groove 130 in parallel (the service lives of the three texturing grooves 100 are all the same). The texturing is independently completed in three single grooves respectively (that is, one texturing is independently completed in only one texturing groove 100 ), and then enters the next process (the arrow in the figure represents the transfer direction a of the silicon wafer).

Referring to FIG. 5 , when the circulation groove 200 is not provided, the first texturing groove 110 , the second texturing groove 120 , and the third texturing groove 130 are arranged in series and side by side (the service life of the three texturing grooves 100 increases in turn), The one-time texturing is completed by the cooperation of three single grooves (that is, the one-time texturing is completed by the cooperation of three texturing grooves 100), and then enters the next process (the arrow in the figure indicates the transfer direction a of the silicon wafer).

Referring to FIG. 6 , when the circulation groove 200 is provided, the first texturing groove 110 , the second texturing groove 120 , the third texturing groove 130 , and the circulation groove 200 are arranged in series and side by side (the service life of the three texturing grooves 100 increases in turn. and the service life of the third texturing groove 130 has reached the upper limit of the service life, the circulation groove 200 is equivalent to the first texturing groove 110 in the previous texturing cycle), and one texturing is completed by the cooperation of three single grooves ( That is, one texturing is completed through the cooperation of three texturing grooves 100 ), and then enters the next process (the arrow in the figure represents the transfer direction a of the silicon wafer).

It should be noted that when the texturing groove 100 does not need to be set, the silicon wafers first enter the texturing groove 100 with the smallest service life, and then the silicon wafers can be textured in sequence; when set in the circulation groove 200, the silicon wafers first enter the texturing groove 100. Circulation groove 200, and then enter the texturing groove 100 with the smallest service life in the previous texturing cycle, and then perform silicon wafer texturing in sequence (at this time, the texturing groove 100 with the longest service life in the previous texturing cycle is simultaneously processed. fluid change process).

In a second aspect, an embodiment of the present application provides a texturing process, using the silicon wafer texturing device provided by the embodiment of the first aspect for texturing, including the following steps:

In each texturing cycle, each batch of silicon wafers is processed for a preset time in each texturing tank; and when the texturing tank with the longest service life reaches the upper limit of the service life, a circulating tank is used to Replacing the texturing groove with the smallest service life among the multiple texturing grooves, and then proceed to the next texturing cycle according to the texturing sequence of the previous texturing cycle. The service life of the circulating groove is shorter than that of the texturing groove with the smallest service life. service life of the tank.

In this embodiment, using the silicon wafer texturing device provided in the embodiment of the first aspect for texturing can make one texturing quilt divided into multiple stages, which is equivalent to reducing the texturing time of silicon wafers in one texturing groove. The concentration of the texturing solution in each texturing tank is basically maintained in a relatively stable state, thereby ensuring the uniformity of the pyramids formed on the surface of the silicon wafer, thereby ensuring the photoelectric conversion efficiency of the silicon wafer. At the same time, since the uniformity of the pyramid formed on the surface of the silicon wafer is guaranteed, the subsequent deposition and coating process can also be prevented from being affected. In addition, the texturing sequence of the next texturing cycle is performed according to the texturing sequence of the previous texturing cycle, which can ensure that the pyramids formed on the surface of the silicon wafer in all texturing cycles have good uniformity during the texturing process.

It should be noted that "replacement of the texturing groove with the smallest service life among the multiple texturing grooves with a circulating groove" refers to placing the circulating groove upstream of the texturing groove with the smallest service life in the previous texturing cycle, and then The remaining texturing troughs are moved downstream in sequence to ensure the integrity of the production line of the texturing equipment.

It should be noted that a texturing cycle refers to the time period between the texturing groove with the longest service life among the multiple texturing grooves from the start of texturing according to the above distribution sequence until the service life reaches the upper limit.

It should be noted that the distribution law of the service life of the multiple texturing grooves that the silicon wafer passes through in sequence is not specifically limited, that is, the service life of the multiple texturing grooves that the silicon wafer passes through in sequence can be sequentially increased, or it can be It is also possible to start from the middle-life texturing groove in order to decrease.

It should be noted that, in order to obtain multiple texturing grooves with different service lives, a debugging step can be added before texturing, that is, according to the number of texturing grooves, a texturing cycle is divided into corresponding multiple stages, and then according to the number of texturing grooves. In the normal texturing process, the corresponding texturing grooves are adjusted to the corresponding service life, and then a plurality of texturing grooves with different service lives can be distributed in series.

It should be noted that the number of the texturing grooves is not specifically limited.

As an example, the number of texturing grooves is three.

In this embodiment, there are three texturing grooves. Taking the service life of the texturing liquid as 120 batches as an example, it is equivalent to dividing one texturing cycle into three stages, and the service lives of the three texturing grooves correspond to 1 to 40 batches, 41 to 80 batches and 81 to 120 batches. The range corresponding to the service life of each texturing trough is 40 batches, which means that after each texturing trough completes 40 texturing cycle batches, it moves one unit downstream, for example, the first After the lifespan of one stage's texturing trough reaches 40 batches (calculated from the beginning of use, 40 texturing cycles are completed), it is moved to the downstream one unit as the second stage's texturing trough, and so on.

As an example, the service life of the texturing grooves through which the silicon wafers pass in sequence increases.

In this embodiment, the service life of the plurality of texturing grooves is set according to the law of increasing sequentially. Compared with the case where the service life of the plurality of texturing grooves is irregular, the uniformity of the pyramids formed on the surface of the silicon wafer can be further improved. sex.

It should be noted that the initial composition and initial concentration of the texturing liquid in the plurality of texturing tanks are not specifically limited, and may be set to be the same or different.

As an example, the initial composition and initial concentration of the texturing liquid in each texturing tank are the same.

In this embodiment, the initial composition and initial concentration of the texturing liquid in the texturing tank are the same, which can make the chemical liquid environment in different texturing tanks more consistent, that is to say, the chemical liquid environment in each stage of each texturing cycle It is more consistent, thereby helping to improve the uniformity of the pyramids formed on the surface of the silicon wafer.

It can be understood that the composition of the texturing liquid is not specifically limited, and can be set according to conventional choices in the art.

As an example, the texturing liquid includes a texturing adjuvant (ADD), potassium hydroxide and water.

Among them, ADD can be purchased through conventional channels, and it mainly acts as a catalyst to make silicon wafers better form pyramids.

It can be understood that the concentration of the texturing liquid is not specifically limited, and can be adjusted according to actual needs.

As an example, in parts by weight: the texturing liquid includes: potassium hydroxide: 2.33%, ADD: 0.8% and the balance of water.

It should be noted that the processing temperature in each texturing tank is not specifically limited, and may be set to the same situation or to different situations.

As an example, the processing temperature in each texturing tank is the same.

In this embodiment, setting the processing temperature in the multiple texturing grooves to the same condition can ensure the consistency of each stage of the texturing process, thereby helping to further improve the uniformity of the pyramids formed on the surface of the silicon wafer.

It can be understood that the processing temperature in the texturing tank is not specifically limited, and can be set according to conventional choices in the art.

As an example, the processing temperature is 75-85°C, such as but not limited to temperatures of 75°C, 76°C, 77°C, 78°C, 79°C, 80°C, 81°C, 82°C, 83°C, 84°C, and 85°C Any one of °C or a range value between any two.

It should be noted that the processing time in each texturing tank is not specifically limited, and can be set to the same situation or different situations.

As an example, the processing time in each texturing tank is the same.

In this embodiment, setting the processing time in the plurality of texturing grooves to the same situation can further ensure the consistency of each stage of the texturing process, and also help to improve the uniformity of the pyramids formed on the surface of the silicon wafer.

It can be understood that the processing time in the texturing tank is not specifically limited, and can be set according to conventional choices in the art.

As an example, the processing time is 120-180S, for example, but not limited to, the temperature is any one of 120S, 130S, 140S, 160S, and 180S, or a range value between any two.

The features and properties of the present application will be described in further detail below with reference to the embodiments.

Example 1

The application provides a texturing process, comprising the following steps:

In a texturing cycle, first adjust the service life of the two texturing tanks (texturing liquid includes: potassium hydroxide: 2.33%, ADD: 0.8% and the balance of water) to 41-80 batches and 81- 120 batches, and then, add a texturing groove with a service life of 1 to 40 batches, and then add three texturing grooves with a service life of 1 to 40 batches, 41 to 80 batches, and 81 to 120 batches along the silicon wafer. The transmission direction of the silicon wafers is distributed in series from upstream to downstream, and then a washing tank is added between two adjacent texturing tanks. The treatment temperature in the tank is 80° C. and the treatment time is 160S, and finally, the silicon wafers after texturing are dried.

After one texturing cycle is completed, the texturing groove with the smallest service life is replaced by the circulating groove, and then the texturing sequence of the next texturing cycle is carried out according to the texturing sequence of the previous texturing cycle.

Comparative Example 1

The application provides a texturing process, comprising the following steps:

The silicon wafers are texturized in a texturing tank, and the processing temperature of the texturing tank is 80° C. and the processing time is 480S. Finally, the silicon wafers after texturing are dried.

Test Example 1

Pyramid size test

Test method: 120 batches of silicon wafers were prepared by the texturing methods of Example 1 and Comparative Example 1, respectively, and then 13 batches of silicon wafers were selected at regular intervals from the first batch to the 120th batch, and the silicon wafers were tested. The dimensions of the pyramids formed on the surface were tested.

Referring to FIG. 7, it can be seen that, compared with Comparative Example 1, the size of the pyramid in Example 1 has a small change, which is basically maintained between 1.91 and 1.95 μm; while the size of the pyramid in Comparative Example 1 has a larger change, It has been raised from 1.81μm to 2.0μm. From the conclusions of the two, it can be seen that by dividing one texturing into multiple stages, the size of the pyramid can be basically kept unchanged, thereby ensuring the uniformity of the pyramid formed on the surface of the silicon wafer.

Test Example 2

Test of Pyramid Reflectance

Test method: 120 batches of silicon wafers were prepared by the texturing methods of Example 1 and Comparative Example 1, respectively, and then 13 batches of silicon wafers were selected at regular intervals from the first batch to the 120th batch, and the silicon wafers were tested. The reflectivity of the pyramid formed on the surface was tested.

Referring to FIG. 8 , it can be seen that, compared with Comparative Example 1, the reflectivity of the pyramid in Example 1 has a small change, which is basically maintained between 9.47% and 9.59%; while the reflectivity change of the pyramid in Comparative Example 1 is relatively small. It has been increased from 8.96% to 10.09%. From the conclusions of the two, it can be seen that by dividing one texturing into multiple stages, the reflectivity of the pyramid can be kept basically unchanged, thereby ensuring the photoelectric conversion efficiency of silicon wafers.

Test Example 3

Silicon wafer electrical performance test

Test method: Prepare the same number of silicon wafers (generally set to about 170,000 pieces) by the texturing methods of Example 1 and Comparative Example 1, respectively, and then use the halm tester to test the Eta, Voc, Isc of each silicon wafer respectively. and FF, and then obtain the average value corresponding to each parameter.

It should be noted that the number of test objects is large enough to make the test results representative.

Table 1 Electrical performance test of silicon wafer

Referring to Table 1, it can be seen that, according to the texturing method provided in the examples of the present application, the Eta, Isc and FF of the prepared silicon wafer are improved compared with the conventional texturing method.

The above-described embodiments are some, but not all, embodiments of the present application. The detailed descriptions of the embodiments of the application are not intended to limit the scope of the application as claimed, but are merely representative of selected embodiments of the application. Based on the embodiments in the present application, all other embodiments obtained by those of ordinary skill in the art without creative work fall within the protection scope of the present application.

Claims (10)

1. A silicon wafer texturing device, characterized in that it comprises a plurality of texturing grooves distributed in series, and the service lives of the plurality of texturing grooves are different. 2 . The silicon wafer texturing device according to claim 1 , wherein the silicon wafer texturing device further comprises a circulation groove, and the service life of the circulation groove is shorter than that of the plurality of texturing grooves with the smallest service life. 3 . the service life of the texturing groove. 3 . The silicon wafer texturing device according to claim 1 , wherein the number of the texturing grooves is 2-4. 4 . 4 . The silicon wafer texturing device according to claim 3 , wherein a plurality of the texturing grooves are distributed in series along the conveying direction of the silicon wafer, and from upstream to downstream along the conveying direction of the silicon wafer. 5 . , the service life of the texturing groove increases or decreases sequentially. The silicon wafer texturing device according to claim 1 or 2, characterized in that, in the conveying direction of the silicon wafer, a water washing tank is further provided between any two adjacent texturing tanks. 6. A texturing process, characterized in that, using the silicon wafer texturing device according to any one of claims 1 to 5 for texturing, comprising the following steps: In each texturing cycle, each batch of silicon wafers is textured in each of the texturing grooves for a preset time; and when the texturing groove with the longest service life reaches the upper limit of the service life, the cyclic A groove is used to replace the texturing groove with the smallest service life among the plurality of texturing grooves, and then the next texturing cycle is performed according to the texturing sequence of the previous texturing cycle. The use of the circulating groove The service life is shorter than the service life of the texturing groove with the smallest service life among the plurality of texturing grooves. 7 . The texturing process according to claim 6 , wherein the service life of a plurality of the texturing grooves through which the silicon wafer passes in sequence increases sequentially. 8 . 8 . The texturing process according to claim 6 , wherein the initial composition and initial concentration of the texturing liquid in each of the texturing tanks are the same. 9 . 9 . The texturing process according to claim 6 or 7 , wherein the processing temperature in each of the texturing grooves is the same. 10 . 10. The texturing process according to claim 6 or 7, wherein the processing time in each of the texturing grooves is the same.

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