CN114990491B - Metal film hot-dip coating device and method - Google Patents
Metal film hot-dip coating device and method Download PDFInfo
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- CN114990491B CN114990491B CN202210453601.2A CN202210453601A CN114990491B CN 114990491 B CN114990491 B CN 114990491B CN 202210453601 A CN202210453601 A CN 202210453601A CN 114990491 B CN114990491 B CN 114990491B
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 41
- 239000002184 metal Substances 0.000 title claims abstract description 41
- 238000003618 dip coating Methods 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000002245 particle Substances 0.000 claims abstract description 83
- 238000001704 evaporation Methods 0.000 claims abstract description 78
- 230000008020 evaporation Effects 0.000 claims abstract description 78
- 230000000903 blocking effect Effects 0.000 claims abstract description 53
- 238000007747 plating Methods 0.000 claims abstract description 25
- 238000000926 separation method Methods 0.000 claims abstract description 22
- 230000008018 melting Effects 0.000 claims abstract description 11
- 238000002844 melting Methods 0.000 claims abstract description 11
- 238000009751 slip forming Methods 0.000 claims abstract description 3
- 230000004888 barrier function Effects 0.000 claims description 45
- 238000007740 vapor deposition Methods 0.000 claims description 25
- 150000003839 salts Chemical class 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 238000002955 isolation Methods 0.000 claims description 9
- 239000013618 particulate matter Substances 0.000 claims description 9
- 238000004140 cleaning Methods 0.000 claims description 6
- 238000000576 coating method Methods 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000009413 insulation Methods 0.000 claims description 5
- 239000007791 liquid phase Substances 0.000 claims description 4
- 239000000203 mixture Substances 0.000 claims description 3
- 235000002639 sodium chloride Nutrition 0.000 description 12
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 6
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 6
- NLKNQRATVPKPDG-UHFFFAOYSA-M potassium iodide Chemical compound [K+].[I-] NLKNQRATVPKPDG-UHFFFAOYSA-M 0.000 description 6
- 239000010936 titanium Substances 0.000 description 6
- 229910052719 titanium Inorganic materials 0.000 description 6
- 239000011651 chromium Substances 0.000 description 5
- 229910052804 chromium Inorganic materials 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- 239000002923 metal particle Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 description 4
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 238000002390 rotary evaporation Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910052725 zinc Inorganic materials 0.000 description 4
- 239000011701 zinc Substances 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- UXVMQQNJUSDDNG-UHFFFAOYSA-L Calcium chloride Chemical compound [Cl-].[Cl-].[Ca+2] UXVMQQNJUSDDNG-UHFFFAOYSA-L 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000001110 calcium chloride Substances 0.000 description 2
- 229910001628 calcium chloride Inorganic materials 0.000 description 2
- 235000011148 calcium chloride Nutrition 0.000 description 2
- 238000012864 cross contamination Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 229910002804 graphite Inorganic materials 0.000 description 2
- 239000010439 graphite Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000001103 potassium chloride Substances 0.000 description 2
- 235000011164 potassium chloride Nutrition 0.000 description 2
- 235000007715 potassium iodide Nutrition 0.000 description 2
- 230000002265 prevention Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 230000035939 shock Effects 0.000 description 2
- 239000011780 sodium chloride Substances 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 but not limited to Substances 0.000 description 1
- 239000002775 capsule Substances 0.000 description 1
- 239000011195 cermet Substances 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 230000004660 morphological change Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000005191 phase separation Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000000638 solvent extraction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention discloses a metal film hot-dip coating device and a method, wherein the disclosed metal film hot-dip coating device comprises a cavity provided with an air inlet pipe and an air outlet pipe, a temperature control system and an atmosphere control system for controlling vacuum degree and atmosphere components, wherein a plurality of evaporation chambers are detachably connected in the cavity, and the temperature control system controls the temperature in each evaporation chamber; the evaporation chamber comprises a chamber seat, an evaporation source position for placing an evaporation source is arranged on the chamber seat, a separation groove is continuously formed around the evaporation source position, a chamber cover is detachably connected to the separation groove, a sample chamber is formed by the inner wall of the chamber cover and the chamber seat, and a placing position for placing a sample to be evaporated is arranged on the chamber seat in the sample chamber; and fusible particles with melting point lower than the working temperature of the evaporation source are placed in the blocking groove. The invention also discloses a metal film hot-plating method, which adopts the metal film hot-plating device to plate the film on the sample to be evaporated.
Description
Technical Field
The invention relates to the field of metal film hot plating, in particular to a metal film hot plating device and a metal film hot plating method.
Background
The plating mode of the metal film comprises two major types of wet plating and dry plating, wherein the wet plating comprises an electroplating method, a chemical plating method and the like, and the dry plating can be divided into a chemical vapor deposition method, a physical vapor deposition method and the like, wherein the physical vapor deposition method is widely applied in the industry and scientific research fields due to the advantages of good plating quality, multiple types of plating and the like.
In the hot plating process, metal is deposited in the cavity, so that one of the maintenance tasks of the cavity is cleaning of the deposited metal on the inner wall of the cavity, and on one hand, the vacuum degree of the equipment for the next task is affected in order to prevent certain metal film surfaces from adsorbing oxygen during cavity opening and sample taking and placing; on the other hand, when plating different kinds of films, the metal films deposited at all positions in the cavity are thoroughly cleaned, so that secondary evaporation during later film plating is prevented, and the quality of later film plating is polluted; but most of vapor deposition plating films are good in quality, the film layer is quite compact, the bonding force with a base is good, and the deposited metal in the cavity is difficult to clean.
The prior art discloses a metal film vapor deposition processing device as disclosed in Chinese patent publication No. CN113737137A, which comprises a base, a closed cabin, an automatic cabin door and a vacuum pump; the upper surface of the base is fixedly connected with a closed cabin; an automatic cabin door is arranged at the front part of the housing of the closed cabin; the upper part of the closed cabin is connected with a vacuum pump through a conduit, and the vacuum pump is positioned at the left side of the base; the device also comprises a rotary evaporation unit, a feeding unit, an anti-pollution diffraction unit, a positioning clamping unit and a leakage prevention unit; the rear part of the upper surface of the bottom plate of the closed cabin is connected with a rotary evaporation unit for switching evaporation of various metals; the front part of the upper surface of the bottom plate of the closed cabin is connected with a feeding unit; the rear part of the housing of the closed cabin is connected with the feeding unit; the upper part of the rotary evaporation unit is connected with the feeding unit; the middle part of the feeding unit is connected with an anti-pollution diffraction unit for preventing different metals from cross contamination when diffracting metal vapor, and the anti-pollution diffraction unit is positioned above the rotary evaporation unit; the upper part of the anti-pollution diffraction unit is connected with a positioning and clamping unit for positioning and sealing holes of the four-hole reflection cup; the upper part of the anti-pollution diffraction unit is connected with a leakage prevention unit for preventing metal vapor from leaking; the leakage-proof unit is connected with the positioning and clamping unit.
The metal film vapor deposition processing equipment provided by the patent prevents cross contamination by utilizing the rotary vapor deposition units arranged on a plurality of vapor deposition pipes, but the vapor deposition pipes still deposit metal and are difficult to clean.
Disclosure of Invention
In order to solve the problems in the prior art, the invention provides a metal film hot-dip coating device and a metal film hot-dip coating method.
The metal film hot-dip coating device comprises a cavity provided with an air inlet pipe and an air outlet pipe, a temperature control system and an atmosphere control system for controlling vacuum degree and atmosphere components, wherein a plurality of evaporation chambers are detachably connected in the cavity, and the temperature control system controls the temperature in each evaporation chamber;
the evaporation chamber comprises a chamber seat, an evaporation source position for placing an evaporation source is arranged on the chamber seat, a separation groove is continuously formed around the evaporation source position, a chamber cover is detachably connected to the separation groove, a sample chamber is formed by the inner wall of the chamber cover and the chamber seat, and a placing position for placing a sample to be evaporated is arranged on the chamber seat in the sample chamber; and fusible particles with melting point lower than the working temperature of the evaporation source are placed in the blocking groove.
Specifically, a threaded or direct-insertion or buckle type connecting mode is adopted between the evaporation chamber and the cavity; the temperature control system can independently control the temperatures in different evaporation chambers; the sample to be evaporated can be placed at a sample position or a sample rack, and the position where the sample to be evaporated is not contacted with the sample grade or the sample rack is the position where the coating is required; the blocking grooves are connected end to end, and the shapes of the blocking grooves comprise, but are not limited to, triangles, rectangles, polygons, circles and rings; the evaporation source material is selected from platinum, titanium, copper, silver, chromium, aluminum, zinc and gold, and a metal material containing one or more elements of titanium, copper, silver, chromium, aluminum, zinc and gold; the temperature control system can independently control the temperatures of the evaporation source position and the blocking groove region, and can control the working temperature of the meltable particles in the blocking groove to be within 30 ℃ above the melting point of the meltable particles, and the temperature control system is used as a compensation means to isolate the steam generated by the meltable particles from entering the sample chamber and the cavity; when the temperature control system works, the blocking groove area reaches the working temperature before the evaporation source position.
Under the normal temperature state, the meltable particles are granular, and gaps among the meltable particles can enable air in the sample chamber to be rapidly pumped away; and because the fusible particles placed in the blocking groove reach the working temperature before the vapor deposition source, when the vapor deposition source reaches the working temperature, the fusible particles are melted into a liquid state, and the liquid barrier is formed to absorb vapor deposition metal particles which overflow outwards and possibly pollute the cavity.
Preferably, the blocking groove comprises a bottom wall and two opposite side walls, and the distance between the two side walls is gradually increased along the direction away from the bottom wall.
Specifically, the groove shape of the blocking groove is wide at the upper part and narrow at the lower part, and the melted liquid flows in the groove due to the fact that the melting of the meltable particles is accompanied by the morphological change, the gaps among the particles disappear, and the stable working state of the meltable particles after being melted is guaranteed due to the wide upper part and narrow lower part; the shape of the blocking groove is preferably an inverted right-angle trapezoid, the right-angle position is close to the evaporation source, and because the fusible particles are placed after the chamber cover is buckled down, the fusible particles are arranged outside the chamber cover, and the inside is vacant, and the flowing of the fused particles at high temperature can partially fill the vacant space, so that the liquid level is reduced, and the reduction loss is minimum in the inside right-angle state.
Preferably, the barrier groove is provided with a plurality of barrier grooves, each barrier groove increases in size towards the direction away from the evaporation source position, the chamber cover is detachably connected with the barrier groove closest to the evaporation source position, and protecting covers are detachably connected with other barrier grooves.
Specifically, the chamber cover, the protecting cover and the blocking groove are made of high-temperature resistant materials, including but not limited to graphite, titanium, chromium, metal ceramic and ceramic with good heat insulation performance.
Preferably, meltable particles are placed in each of the barrier grooves.
Specifically, at this time, the number of the blocking grooves is one or two.
Preferably, the number of the blocking grooves is at least three, high-temperature resistant particles are placed in the blocking grooves closest to and farthest from the evaporation source, and meltable particles are placed in the remaining blocking grooves.
Specifically, in order to avoid obvious evaporation of molten substances caused by excessive temperature and pollute the sample chamber and the cavity, high-temperature resistant particles are placed in the innermost and outermost barrier grooves, and the size range of the high-temperature resistant particles is 100nm-100um.
Preferably, the number of the barrier grooves is at least three, and when the side wall for separating the adjacent barrier grooves is a hollow side wall for heat insulation, the meltable particles are placed in the barrier grooves except for the barrier groove closest to and farthest from the evaporation source.
Specifically, the hollow side walls form the heat insulating strips, and when the barrier groove in which the meltable particulate matter is placed is heated, heat conduction is blocked by the heat insulating strips, so that the heating position is limited to the area between the inner side of the outermost barrier groove and the outer side wall of the innermost barrier groove.
Preferably, an isolation cabin is formed between the outer wall of the chamber cover and the inner wall of the adjacent protecting cover, and an isolation cabin is also formed between the inner wall and the outer wall of the adjacent protecting cover; at least two isolation cabins are arranged.
Preferably, the meltable particulate matter is a water soluble salt having a particle size in the range of: 1um-1mm.
Preferably, meltable particulate matter having a particle size in the range of 10um to 0.5mm is selected; more preferably, the fusible particles with the particle size range of 20um to 0.1mm are selected, and water-soluble salts are selected so as to facilitate the cleaning of the evaporation chamber after the deposition of the metal film;
the meltable particles can be water-soluble salts, such as one or more of sodium chloride, calcium chloride, potassium iodide, potassium chloride and zinc chloride, and the working temperature of the meltable particles is at least 50 ℃ lower than the working temperature of the evaporation source by selecting simple substance salt and mixed salt in proportion, so as to avoid thermal shock of the blocking groove area during the working process of the evaporation source.
A metal film hot-dip coating method using the metal film hot-dip coating apparatus as claimed in any one of the above, the method comprising the steps of:
s1, placing an evaporation source in an evaporation source position, placing a sample to be evaporated in a placement position, when the number of the separation grooves is one, reversely buckling a chamber cover on the separation groove of a chamber seat, placing meltable particles in the separation groove, and then installing an evaporation chamber in a cavity;
when the number of the blocking grooves is at least three, reversely buckling the chamber cover on the blocking groove of the chamber seat closest to the evaporation source position, placing high-temperature resistant particles or not placing any particles in the blocking groove, reversely buckling a plurality of protecting covers on other blocking grooves in sequence in the direction away from the chamber cover, placing high-temperature resistant particles or not placing particles in the blocking groove farthest from the evaporation source position, placing meltable particles in the other blocking grooves, wherein the chamber cover is positioned in the protecting cover at the innermost side, and the protecting cover close to the chamber cover is always positioned in the protecting cover away from the chamber cover;
s2, adjusting the vacuum degree and the atmosphere composition in the cavity and the sample chamber by using an atmosphere control system, heating the evaporation source and the meltable particles by using a temperature control system after the adjustment is finished, melting the meltable particles into a liquid state after the temperature rise, and forming a liquid phase barrier layer and then starting coating;
and S3, after the film plating is finished, taking out the vapor plating chamber from the cavity, sequentially opening the protecting cover and the chamber cover from outside to inside, taking out the sample, cleaning the vapor plating chamber, and reserving for next use.
Specifically, when installing chamber lid, protecting cover in the separation groove, chamber lid, protecting cover's width is less than its width that corresponds the separation groove, and chamber lid, protecting cover are installed in the separation groove in the middle, therefore have the space between chamber lid, protecting cover and the lateral wall in separation groove, but fused particle thing or high temperature resistant particulate matter place in this space promptly.
Compared with the prior art, the invention has the advantages that at least the following steps are included:
the evaporation chamber is arranged in the cavity, the coating process of the surface of the sample is completed in the sample chamber of the evaporation chamber, most of gas-phase metal particles are prevented from diffusing to the cavity, meanwhile, the separation groove and the meltable particles with the melting point lower than the working temperature of the evaporation source are arranged in the evaporation chamber, and the meltable particles are melted to form a liquid-phase separation layer to absorb the metal particles diffused from the sample chamber in the evaporation process, so that the metal particles are thoroughly prevented from diffusing to the cavity of the evaporation equipment to cause pollution; the temperature control system is used for independently controlling the temperature of the evaporation chambers, so that films with different types and thicknesses can be plated for different samples at the same time.
Drawings
FIG. 1 is a schematic diagram of a metal film hot-dip coating apparatus according to the present invention;
FIG. 2 is a schematic diagram showing the whole section of an evaporation chamber of a metal film hot-dip coating apparatus according to the present invention;
FIG. 3 is a schematic top view of a chamber base of the metal film hot-dip coating apparatus according to the present invention;
fig. 4 is a schematic structural diagram of another embodiment of a metal film hot-dip coating apparatus according to the present invention.
Detailed Description
The invention is further described below with reference to the drawings and examples.
As shown in fig. 1, the metal film hot-dip coating device comprises a cavity 10 provided with an air inlet pipe 11 and an air outlet pipe 12, a temperature control system and an atmosphere control system for controlling vacuum degree and atmosphere components, wherein a plurality of vapor deposition chambers 20 are detachably connected in the cavity 10, and the temperature control system controls the temperature in each vapor deposition chamber 20;
as shown in fig. 2 and 3, the evaporation chamber 20 includes a chamber seat 21, an evaporation source position 27 for placing an evaporation source is provided on the chamber seat 21, a blocking groove 22 is continuously provided around the evaporation source position 27, a chamber cover 24 is detachably connected to the blocking groove 22, a sample chamber 23 is formed by an inner wall of the chamber cover 24 and the chamber seat 21, and a placement position for placing a sample to be evaporated is provided on the chamber seat 21 in the sample chamber 23; the blocking groove 22 is internally provided with meltable particles with melting point lower than the working temperature of the evaporation source.
The evaporation chamber 20 and the cavity 10 are connected in a snap-fit manner; the temperature control system can independently control the temperatures in different vapor deposition chambers 20; the sample to be evaporated can be placed at a sample position or a sample rack, and the position where the sample to be evaporated is not contacted with the sample grade or the sample rack is the position where the coating is required; the blocking groove 22 is annular in shape and connected end to end; the evaporation source material is selected from platinum, titanium, copper, silver, chromium, aluminum, zinc and gold, and a metal material containing one or more elements of titanium, copper, silver, chromium, aluminum, zinc and gold; the temperature control system can independently control the temperature of the evaporation source position 27 and the area of the barrier groove 22, and the temperature control system controls the working temperature of the meltable particles in the barrier groove 22 to be within 30 ℃ above the melting point of the meltable particles, and the temperature control system is used as a compensation means to isolate the steam generated by the meltable particles from entering the sample chamber 23 and the cavity 10; when the temperature control system works, the area of the blocking groove 22 reaches the working temperature before the evaporation source position 27.
In the normal temperature state, the meltable particles are granular, and gaps among the meltable particles can enable air in the sample chamber 23 to be rapidly pumped away; because the meltable particles in the barrier groove 22 reach the working temperature before the vapor deposition source, when the vapor deposition source reaches the working temperature, the meltable particles are melted into a liquid state, and the liquid barrier is formed to absorb the vapor deposition metal particles overflowing outwards to possibly pollute the cavity 10.
The blocking groove 22 comprises a bottom wall and two opposite side walls, and the distance between the two side walls is gradually increased along the direction away from the bottom wall.
The shape of the blocking groove 22 is an inverted right trapezoid, the right angle position is close to the evaporation source, and because the fusible particles are placed after the chamber cover 24 is buckled down, the fusible particles are arranged on the outer side of the chamber cover 24, and the inner side is free, and the flow of the fusible particles after being melted at high temperature can partially fill the free space, so that the liquid level is reduced, and the reduction loss is minimum in the right angle state on the inner side.
The number of the blocking grooves 22 is several, the size of each blocking groove 22 increases toward the direction far away from the vapor deposition source position 27, the chamber cover 24 is detachably connected with the blocking groove 22 closest to the vapor deposition source position 27, and the other blocking grooves 22 are detachably connected with the protecting cover 25.
The chamber cover 24, the cover 25, and the barrier groove 22 are made of a material selected from the group consisting of high temperature resistant materials including, but not limited to, graphite, titanium, chromium, cermet, and ceramics having good heat insulation properties.
When one or two of the barrier grooves 22 are provided, meltable particulate matter is disposed in each of the barrier grooves 22.
When the number of the barrier grooves 22 is at least three, refractory particles are placed in the barrier grooves 22 closest and farthest to the vapor deposition source position 27, and meltable particles are placed in the remaining barrier grooves 22.
To avoid significant evaporation of the molten material at excessive temperatures, contaminating sample chamber 23 and cavity 10, high temperature resistant particulate matter is placed in the innermost and outermost barrier grooves 22, with a high temperature resistant particle size in the range of 100nm-100um.
In addition, when the number of barrier grooves 22 is at least three, a structure as shown in fig. 4 may be employed, and when the side wall for partitioning the adjacent barrier grooves 22 is a hollow side wall for heat insulation, the meltable particles are placed in the barrier grooves 22 other than the barrier groove 22 closest and farthest to the vapor deposition source position 27.
The hollow side walls form the heat insulating tape 30, and when the barrier groove 22 in which the meltable particulate matter is placed is heated, heat conduction is blocked by the heat insulating tape 30 so that the heating position is limited to the region between the inner side wall of the outermost barrier groove 22 to the outer side wall of the innermost barrier groove 22.
An isolation cabin 26 is formed between the outer wall of the chamber cover 24 and the inner wall of the adjacent protecting cover 25, and an isolation cabin 26 is also formed between the inner wall and the outer wall of the adjacent protecting cover 25; the isolation capsule 26 is provided with two.
The meltable particles are water-soluble salts and have the particle size range of: 1um-1mm.
Preferably, meltable particulate matter having a particle size in the range of 10um to 0.5mm is selected; more preferably, the fusible particles with the particle size range of 20um to 0.1mm are selected, and water-soluble salts are selected so as to facilitate the cleaning of the evaporation chamber 20 after the deposition of the metal film;
the meltable particles can be water soluble salts, such as one or more of sodium chloride, calcium chloride, potassium iodide, potassium chloride and zinc chloride, and the working temperature of the meltable particles is at least 50 ℃ lower than the working temperature of the evaporation source 27 by selecting simple substance salt and mixing salt in proportion, so as to avoid thermal shock of the evaporation source 27 in the area of the blocking groove 22 in the working process.
A metal film hot-dip coating method using the metal film hot-dip coating apparatus as claimed in any one of the above, the method comprising the steps of:
s1, placing a vapor deposition source at a vapor deposition source position 27, placing a sample to be vapor deposited at a placement position, when the number of the separation grooves 22 is one, reversely buckling a chamber cover 24 on the separation groove 22 of a chamber seat 21, placing meltable particles in the separation groove 22, and then installing a vapor deposition chamber 20 in a cavity 10;
when the number of the blocking grooves 22 is at least three, after the chamber cover 24 is reversely buckled on the blocking groove 22 of the chamber seat 21 closest to the evaporation source position 27, high temperature resistant particles are placed in the blocking groove 22 or no particles are placed in the blocking groove, a plurality of protecting covers 25 are reversely buckled on other blocking grooves 22 in sequence towards the direction far away from the chamber cover 24, high temperature resistant particles are placed in the blocking groove 22 farthest from the evaporation source position 27 or no particles are placed in the blocking groove 22, meltable particles are placed in the other blocking grooves 22, the chamber cover 24 is positioned in the protecting cover 25 at the innermost side, and the protecting cover 25 close to the chamber cover 24 is always positioned in the protecting cover 25 far away from the chamber cover 24;
s2, adjusting the vacuum degree and the atmosphere composition in the cavity 10 and the sample chamber 23 by using an atmosphere control system, heating the evaporation source and the meltable particles by using a temperature control system after the adjustment is finished, melting the meltable particles into a liquid state after the temperature rise, and forming a liquid phase barrier layer and then starting coating;
and S3, after the film plating is finished, taking out the vapor plating chamber 20 from the cavity 10, sequentially opening the protecting cover 25 and the chamber cover 24 from outside to inside, taking out a sample, cleaning the vapor plating chamber 20, and reserving for the next use.
Specifically, when the cover 24 and the cover 25 are installed in the blocking slot 22, the widths of the cover 24 and the cover 25 are smaller than the corresponding widths of the blocking slot 22, and the cover 24 and the cover 25 are installed in the blocking slot 22 in the middle, so that a gap exists between the cover 24 and the cover 25 and the side wall of the blocking slot 22, and the meltable particles or the high-temperature resistant particles are placed in the gap.
Claims (6)
1. The metal film hot-dip coating device comprises a cavity provided with an air inlet pipe and an air outlet pipe, a temperature control system and an atmosphere control system for controlling vacuum degree and atmosphere components, and is characterized in that a plurality of evaporation chambers are detachably connected in the cavity, and the temperature control system controls the temperature in each evaporation chamber;
the evaporation chamber comprises a chamber seat, an evaporation source position for placing an evaporation source is arranged on the chamber seat, a separation groove is continuously formed around the evaporation source position, a chamber cover is detachably connected to the separation groove, a sample chamber is formed by the inner wall of the chamber cover and the chamber seat, and a placing position for placing a sample to be evaporated is arranged on the chamber seat in the sample chamber; and fusible particles with melting point lower than the working temperature of the evaporation source are placed in the blocking groove:
the side walls of the separation grooves are used for separating adjacent separation grooves, the size of each separation groove increases towards the direction away from the evaporation source position, the chamber cover is detachably connected with the separation groove closest to the evaporation source position, and the separation groove is detachably connected with a protecting cover;
wherein, high temperature resistant particles are placed in the blocking grooves closest and farthest to the evaporation source position, and meltable particles are placed in the rest blocking grooves;
when the side wall for separating the adjacent barrier grooves is a side wall for heat insulation, the meltable particles are placed in the barrier grooves other than the barrier groove closest and farthest from the vapor deposition source position.
2. The apparatus according to claim 1, wherein the blocking groove comprises a bottom wall and two opposite side walls, and the distance between the two side walls increases gradually along the direction away from the bottom wall.
3. The metal film hot-dip coating apparatus according to claim 1, wherein an isolation chamber is formed between the outer wall of the chamber cover and the inner wall of the adjacent cover, and an isolation chamber is formed between the inner wall of the adjacent cover and the outer wall; at least two isolation cabins are arranged.
4. The apparatus for hot-dip coating a metal film according to claim 1, wherein the meltable particulate matter is a water-soluble salt having a particle size in the range of: 1um-1mm.
5. A metal film hot-dip coating method, characterized by using the metal film hot-dip coating apparatus as claimed in any one of claims 1 to 4, comprising the steps of:
s1, placing an evaporation source at an evaporation source position, placing a sample to be evaporated at a placement position, reversely buckling a chamber cover on a blocking groove of a chamber seat closest to the evaporation source position, placing meltable particles in the blocking groove, and then installing an evaporation chamber in a cavity;
s2, adjusting the vacuum degree and the atmosphere composition in the cavity and the sample chamber by using an atmosphere control system, heating the evaporation source and the meltable particles by using a temperature control system after the adjustment is finished, melting the meltable particles into a liquid state after the temperature rise, and forming a liquid phase barrier layer and then starting coating;
and S3, after the film plating is finished, taking the evaporation chamber out of the cavity, opening the chamber cover, taking out a sample, and cleaning the evaporation chamber for the next use.
6. The method according to claim 5, wherein when the number of the barrier grooves is at least three, in step S1, after the chamber cover is reversely buckled on the barrier groove closest to the vapor deposition source position of the chamber seat, high temperature resistant particles or no particles are placed in the barrier groove, and in a direction away from the chamber cover, a plurality of protecting covers are reversely buckled on other barrier grooves in sequence, high temperature resistant particles or no particles are placed in the barrier groove farthest from the vapor deposition source position, meltable particles are placed in the remaining barrier grooves, the chamber cover is positioned in the protecting cover at the innermost side, and the protecting cover close to the chamber cover is always positioned in the protecting cover away from the chamber cover.
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| CN202210453601.2A CN114990491B (en) | 2022-04-27 | 2022-04-27 | Metal film hot-dip coating device and method |
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| CN202210453601.2A CN114990491B (en) | 2022-04-27 | 2022-04-27 | Metal film hot-dip coating device and method |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH219147A (en) * | 1940-03-02 | 1942-01-31 | Edeleanu Gmbh | Gas-tight housing for continuously working filter. |
| US6851896B1 (en) * | 2003-09-18 | 2005-02-08 | Kerr-Mcgee Chemical, Llc | Fluid barriers |
| TW200744773A (en) * | 2006-04-25 | 2007-12-16 | Nat Inst For Materials Science | Manufacturing method of alloy microparticle colloid |
| KR20110016842A (en) * | 2009-08-12 | 2011-02-18 | 나노사이언스랩(주) | High efficiency single crystal growth device |
| CN203582959U (en) * | 2013-12-06 | 2014-05-07 | 京东方科技集团股份有限公司 | Evaporation device |
| KR101543953B1 (en) * | 2014-03-18 | 2015-08-11 | 주식회사 포스코 | Apparatus for supplying solid metal, vacuum evaporation system including same, and method for supplying solid metal |
-
2022
- 2022-04-27 CN CN202210453601.2A patent/CN114990491B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CH219147A (en) * | 1940-03-02 | 1942-01-31 | Edeleanu Gmbh | Gas-tight housing for continuously working filter. |
| US6851896B1 (en) * | 2003-09-18 | 2005-02-08 | Kerr-Mcgee Chemical, Llc | Fluid barriers |
| TW200744773A (en) * | 2006-04-25 | 2007-12-16 | Nat Inst For Materials Science | Manufacturing method of alloy microparticle colloid |
| KR20110016842A (en) * | 2009-08-12 | 2011-02-18 | 나노사이언스랩(주) | High efficiency single crystal growth device |
| CN203582959U (en) * | 2013-12-06 | 2014-05-07 | 京东方科技集团股份有限公司 | Evaporation device |
| KR101543953B1 (en) * | 2014-03-18 | 2015-08-11 | 주식회사 포스코 | Apparatus for supplying solid metal, vacuum evaporation system including same, and method for supplying solid metal |
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