CN114975514A - Display panel - Google Patents
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- CN114975514A CN114975514A CN202110189478.3A CN202110189478A CN114975514A CN 114975514 A CN114975514 A CN 114975514A CN 202110189478 A CN202110189478 A CN 202110189478A CN 114975514 A CN114975514 A CN 114975514A
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- 239000002096 quantum dot Substances 0.000 claims abstract description 87
- 239000000463 material Substances 0.000 claims abstract description 45
- 238000005538 encapsulation Methods 0.000 claims description 12
- 238000004806 packaging method and process Methods 0.000 claims description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 10
- 238000010521 absorption reaction Methods 0.000 abstract description 5
- 239000010410 layer Substances 0.000 description 257
- 238000010586 diagram Methods 0.000 description 7
- 238000000034 method Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 5
- 238000005516 engineering process Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- BFKJFAAPBSQJPD-UHFFFAOYSA-N tetrafluoroethene Chemical group FC(F)=C(F)F BFKJFAAPBSQJPD-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000001127 nanoimprint lithography Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/124—Insulating layers formed between TFT elements and OLED elements
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- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
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- Optics & Photonics (AREA)
- Electroluminescent Light Sources (AREA)
Abstract
An embodiment of the present invention provides a display panel, including: driving the back plate; a pixel defining layer; a first electrode layer; a light emitting layer; a second electrode layer; the filling layer is provided with a plurality of first grooves, and the inner surfaces of the first grooves are curved surfaces; the curved surface protrudes towards the second electrode layer; the quantum dot light-emitting layer is provided with a plurality of second through holes, and the second through holes and the corresponding first grooves are provided with the same material. In the embodiment of the invention, the first groove with the curved inner surface is arranged on the filling layer, and the same material is arranged in the second through hole and the corresponding first groove, so that the blue light with large angle emitted by the luminescent layer can be gathered, further, the quantum dot materials in the first groove and the second through hole receive more light, and the light conversion efficiency of the quantum dot luminescent layer is improved; in addition, the thickness of the quantum dot material for receiving light can be increased, and the absorption and conversion efficiency of the light is improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel.
Background
The technologies adopted by the current large-size display panel include: white Organic Light Emitting Diode (WOLED) and Color Filter (CF) technologies, and Quantum Dot Light Emitting Diode (QLED) technologies. Currently, technologies of large-sized display panels under development include: QD-OLED (quantum dot display panel), printed IJP OLED (inkjet printed organic light emitting diode display technology), QDCF-LCD (quantum dot color filter) combined polarizer, electroluminescent printed IJP QDEL (inkjet printed quantum dot light emitting diode), Micro-LED (Micro light emitting diode), etc.
Among them, QD-OLEDs have potential technical advantages, such as high resolution, high color gamut, high color purity, no viewing angle dependence; in addition, the method has potential application advantages, such as large/High color gamut products and medium UHD (Ultra High Definition) products.
Referring to fig. 1, the QD-OLED display panel 10 currently used includes: the driving back plate 11, the pixel defining layer 12, the anode layer 13, the light emitting layer 14, the cathode layer 15, the red quantum dot light emitting layer 16, the green quantum dot light emitting layer 17, the scattering layer 18, the barrier layer 19, and the blue light filtering layer 110. In fig. 1, when only green light is needed, only the light emitting layer X corresponding to the green quantum dot light emitting layer 17 emits blue light, but only small-angle light ray a can be emitted to the green quantum dot light emitting layer, and large-angle light rays b and C can be emitted to the red quantum dot light emitting layer 16 and the scattering layer 18, so that the amount of blue light emitted to the green quantum dot light emitting layer 17 is small, the light emitting efficiency of the blue light emitting layer is low, further, quantum dots in the green quantum dot light emitting layer 17 cannot absorb more light rays, the light conversion efficiency of the quantum dot light emitting layer is low, and the brightness of the display panel is reduced; moreover, under the condition that red light and blue light are not needed, blue light is emitted to the red quantum dot light-emitting layer 16 and the scattering layer 18, so that the display panel can display red light and blue light, and the problem of color crosstalk due to side light leakage occurs.
In order to solve the above problems, in the prior art, a local dimming algorithm is used to perform blurring processing on the periphery of a pixel point of a sub-display panel, so that the display range of a white picture of the sub-display panel is larger than the image display range of a main display panel.
Disclosure of Invention
The invention provides a display panel, which aims to solve the problems of low brightness and light leakage and color crosstalk of the display panel of the conventional quantum dot display panel.
The present invention provides a display panel, comprising:
driving the back plate;
a pixel defining layer disposed on the driving backplane, the pixel defining layer including a non-light emitting region and a plurality of light emitting regions; a first through hole is formed in the light emitting area;
a first electrode layer disposed on the driving back plate in the first through hole;
a light emitting layer covering the pixel defining layer and the first electrode layer;
the second electrode layer is arranged on one surface, away from the driving back plate, of the light emitting layer;
the filling layer is arranged on one surface, away from the light-emitting layer, of the second electrode layer; a plurality of first grooves are formed in one surface, away from the second electrode layer, of the filling layer, and the positions of the first grooves correspond to the positions of the first through holes one by one; the inner surface of the first groove is a curved surface; the curved surface protrudes towards the second electrode layer;
the quantum dot light-emitting layer is arranged on one surface, away from the second electrode layer, of the filling layer; a plurality of second through holes are formed in the quantum dot light-emitting layer, and the positions of the second through holes correspond to the first grooves one by one; the second through holes and the corresponding first grooves are provided with the same material.
Optionally, the filling layer comprises: a first encapsulation layer and a transparent layer;
the first packaging layer is arranged on one surface, away from the light-emitting layer, of the second electrode layer; the transparent layer is arranged on one side, away from the second electrode layer, of the first packaging layer; the first groove is disposed in the transparent layer.
Optionally, the refractive index of the transparent layer is greater than or equal to 1.7.
Optionally, a plurality of second grooves are arranged on the non-light emitting area of the pixel definition layer, and the second grooves are arranged at intervals with the first through holes; the part of the light-emitting layer in the second groove is recessed towards the driving back plate; the second electrode layer is recessed toward the driving back plate at a portion of the second groove.
Optionally, the part of the light emitting layer at the first through hole is recessed towards the driving back plate; the second electrode layer is recessed toward the driving back plate at a portion of the first through hole.
Optionally, the light emitting layer emits blue light.
Optionally, a red quantum dot layer, a green quantum dot material, and a scattering layer are respectively disposed in different second through holes, wherein the second through holes corresponding to the red quantum dot layer, the green quantum dot material, and the scattering layer are arranged in sequence.
Optionally, the cross-sectional shape of the first through-hole comprises: a trapezoid shape; the first bottom edge of the trapezoid faces the driving back plate; the length of the first base of the trapezoid is smaller than the length of the second base of the trapezoid.
Optionally, the shape of the orthographic projection of the second groove on the driving back plate includes: at least one of a circular shape, a square shape, or a square shape.
Optionally, the curved surface includes: hemispherical or semi-cylindrical curved surfaces.
In an embodiment of the present invention, a display panel includes: driving the back plate; a pixel defining layer disposed on the driving backplane, the pixel defining layer including a non-light emitting region and a plurality of light emitting regions; a first through hole is formed in the light emitting area; a first electrode layer disposed on the driving back plate in the first through hole; a light emitting layer covering the pixel defining layer and the first electrode layer; the second electrode layer is arranged on one surface, away from the driving back plate, of the light emitting layer; the filling layer is arranged on one surface, away from the light-emitting layer, of the second electrode layer; a plurality of first grooves are formed in one surface, away from the second electrode layer, of the filling layer, and the positions of the first grooves correspond to the positions of the first through holes one by one; the inner surface of the first groove is a curved surface; the curved surface protrudes towards the second electrode layer; the quantum dot light-emitting layer is arranged on one surface, away from the second electrode layer, of the filling layer; a plurality of second through holes are formed in the quantum dot light-emitting layer, and the positions of the second through holes correspond to the first grooves one by one; the second through holes and the corresponding first grooves are provided with the same material. In the embodiment of the invention, the first groove with the curved inner surface is arranged on the filling layer, and the same material is arranged in the second through hole and the corresponding first groove, so that on one hand, the curved first groove can collect blue light with a large angle emitted by the luminescent layer, and thus quantum dot materials in the first groove and the second through hole can receive more light, and further the light conversion efficiency of the quantum dot luminescent layer is improved; on the other hand, the thickness of the quantum dot material for receiving light can be improved by arranging the first groove, the absorption and conversion efficiency of the light can be improved by improving the thickness of the quantum dot material, and the brightness of the display panel is further improved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings needed to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a schematic diagram of a prior art display panel;
fig. 2 is a schematic structural diagram of a first display panel according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a second display panel according to an embodiment of the present invention;
FIG. 4 is a schematic structural diagram of a first display panel provided in an embodiment of the present invention during a manufacturing process;
FIG. 5 is a schematic structural diagram of a second display panel provided in an embodiment of the present invention during a manufacturing process;
FIG. 6 is a schematic structural diagram of a third display panel according to an embodiment of the present invention;
fig. 7 is a schematic diagram of a relationship between thickness and brightness of a quantum dot material according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2, an embodiment of the present invention provides a display panel 20, including: a driving back plate 21; a pixel defining layer 22, the pixel defining layer 22 being disposed on the driving backplane 21, the pixel defining layer 22 including a non-light emitting region 221 and a plurality of light emitting regions 222; a first through hole P is formed in the light emitting region 222; a first electrode layer 23, the first electrode layer 23 being disposed on the driving back plate 21 in the first through hole P; a light-emitting layer 24, the light-emitting layer 24 covering the pixel defining layer 22 and the first electrode layer 23; a second electrode layer 25, wherein the second electrode layer 25 is arranged on one side of the light-emitting layer 24, which faces away from the driving 21 back plate; a filling layer 26, wherein the filling layer 26 is arranged on the side of the second electrode layer 25 facing away from the light-emitting layer; a plurality of first grooves Q are formed in one surface, away from the second electrode layer 25, of the filling layer 26, and the positions of the first grooves Q correspond to the positions of the first through holes P one by one; the inner surface of the first groove Q is a curved surface; the curved surface protrudes toward the second electrode layer 25; a quantum dot light-emitting layer 27, wherein the quantum dot light-emitting layer 27 is arranged on the side of the filling layer 26 facing away from the second electrode layer 25; a plurality of second through holes V are arranged on the quantum dot light-emitting layer 27, and the positions of the second through holes V correspond to the first grooves Q one by one; the second through hole V and the corresponding first groove Q are provided with the same material.
Specifically, the second through hole V and the corresponding first groove Q are provided with a red quantum dot material, a green quantum dot material and a scattering material, and a red quantum dot layer, a green quantum dot layer and a scattering layer are correspondingly formed in different second through holes.
Wherein, referring to fig. 2, the driving back plate 211 includes: a glass substrate 211 and an array layer 212; further, the array layer 212 includes: the pixel structure comprises a buffer layer, a low-temperature polycrystalline silicon layer formed on the buffer layer, a grid insulating layer formed on the low-temperature polycrystalline silicon layer, a grid layer formed on the grid insulating layer, an interlayer insulating layer formed on the grid layer, a source drain metal layer formed on the interlayer insulating layer, a flat layer formed on the source drain metal layer, a pixel electrode layer formed on the flat layer, a pixel limiting layer formed on the pixel electrode layer and a spacer layer formed on the pixel limiting layer.
Wherein the light emitting layer 24 includes: the light-emitting layer 24 of the blue OLED (blue organic light-emitting diode) is formed by evaporation. The fill layer 26 in fig. 2 may be the first encapsulation layer only; wherein the material of the first packaging layer is TFE (tetrafluoroethylene), and the thickness of the filling layer is 2-8 μm. The first groove Q is disposed in the organic first encapsulation layer.
In the embodiment of the present invention, referring to fig. 2 and fig. 3, the display panel further includes a color film layer 28, where the color film layer 28 is disposed on a surface of the quantum dot light emitting layer 27 away from the filling layer 26; wherein, color film layer 28 includes: filter and black matrix layers 284; the positions of the light filtering layers correspond to the positions of the second through holes Q one by one; the filter layer 281 corresponding to the red quantum dot layer 271 filters blue light and green light; the filter layer 281 corresponding to the green quantum dot material 272 filters blue light and red light; the filter layer 283 corresponding to the scattering layer 273 filters red and green light.
Wherein, a second packaging layer is also arranged between the quantum dot light-emitting layer 27 and the color film layer 28.
In addition, the arrangement of the first groove Q can play a role similar to a condensing lens, and large-angle light rays emitted by the light emitting layer are gathered.
In an embodiment of the invention, the first electrode layer is an anode layer and the second electrode layer is a cathode layer.
Optionally, referring to fig. 3, the filling layer 26 includes: a first encapsulation layer 261 and a transparent layer 262; the first encapsulation layer 261 is disposed on a side of the second electrode layer 25 facing away from the light-emitting layer 24; the transparent layer 262 is disposed on a side of the first encapsulation layer 261 facing away from the second electrode layer 25; the first groove Q is disposed in the transparent layer.
Specifically, a transparent layer 262 is disposed between the organic first encapsulation layer 261 and the quantum dot light emitting layer 27, the transparent layer 262 has a high refractive index, and the refractive index of the transparent layer 262 is greater than or equal to 1.7. Referring to fig. 5, when the emitted light f of the light-emitting layer 24 is a large-angle light, the emitted light would be assumed to be on the nearby quantum dot material when there is no transparent layer 262, and after the transparent layer with a high refractive index is disposed, the emitted light f would be emitted to the barrier layer 274 between the two second through holes V after being refracted by the transparent layer with a high refractive index, thereby avoiding the color cross-color problem.
Wherein, the thickness of the first packaging layer is 2 μm-8 μm, and the material of the first packaging layer comprises: TFE (tetrafluoroethylene) and/or silicon nitride and/or silicon oxynitride; wherein the first encapsulation layer may be one or more layers stacked.
Further, referring to fig. 6, an optical adhesive layer 263 is further disposed between the first encapsulation layer 261 and the transparent layer 262 for adhering the first encapsulation layer 261 and the transparent layer 262; the optical adhesive layer 263 is prepared by extruding and dropping a tube to form an archimedean spiral, diffusing the spiral to fill the whole surface of the first packaging layer, and reducing the number of turns, namely increasing the distance between the spirals to make the optical adhesive layer thinner.
In the embodiment of the present invention, the barrier layer 284 is prepared, then the red quantum dot layer, the green quantum dot layer and the scattering layer are prepared in the second through hole and the first groove on the barrier layer 284, then the second encapsulation layer is formed on the quantum dot light emitting layer 27, and finally the black matrix layer and the filter layer are prepared.
The transparent layer 262 is prepared by coating. The material of the transparent layer 262 includes: the transparent optical material of acrylic type, and further, the thickness of the transparent layer 262 is 2 μm to 8 μm. The material of the transparent layer 262 may also be other transparent photosensitive materials, which is not limited herein.
Further, the first groove Q is formed on the transparent layer 262 by a nano-imprinting or photolithography method. Wherein the shape of the first groove Q includes: hemispherical or semi-cylindrical, the shape of the inner surface of the corresponding first groove includes: hemispherical or semi-cylindrical curved surfaces. The depth of the first groove Q is less than or equal to the thickness of the transparent layer 262; the opening of the first groove Q facing the second through hole V is the same as the opening of the second through hole V facing the first groove Q in size and shape, and the openings are in one-to-one correspondence.
In the embodiment of the present invention, referring to fig. 4, a plurality of second grooves U are disposed on the non-light emitting region 222 of the pixel defining layer 22, and the second grooves U are spaced apart from the first through holes P; the part of the light emitting layer 24 in the second groove U is recessed toward the driving back plate 21; the second electrode layer 25 is recessed toward the driving back plate 21 at the portion of the second groove U.
Specifically, the depth of the second groove U is smaller than the thickness of the pixel defining layer 22; the shape of the orthographic projection of the second groove U on the driving back plate 21 comprises: at least one of a circular shape, a square shape or a square shape.
Referring to fig. 5, the large-angle light e emitted in a light emitting area of the light emitting layer 24 is reflected by the second electrode layer 25 in the second groove U, and can return to the second through hole V corresponding to the light emitting area, so that more large-angle light can be gathered, and the light conversion efficiency of the quantum dot light emitting layer is improved.
In the embodiment of the present invention, the portion of the light emitting layer 24 in the first through hole P is recessed toward the driving back plate 21; the second electrode layer 25 is recessed toward the driving back plate 21 at a portion of the first through hole P.
Further, the cross-sectional shape of the first through-hole P includes: a trapezoid shape; the first bottom edge of the trapezoid faces the driving back plate 21; the length of the first bottom edge of the trapezoid is smaller than that of the second bottom edge of the trapezoid.
Specifically, referring to fig. 5, the cross-sectional shape of the first through-hole P includes: a trapezoid shape, and the light emitting layer 24 is recessed toward the driving back plate 21 at a portion of the first through hole P; the second electrode layer 25 is recessed towards the driving back plate 21 at the part of the first through hole P, so that when the light emitting layer 24 in the first through hole P emits the large-angle light ray d, the light ray d can be emitted to the second electrode layer in the first through hole P, and is emitted to the first groove Q after being reflected by the second electrode layer.
Optionally, the light emitting layer 25 emits blue light.
In the embodiment of the present invention, a red quantum dot layer 271, a green quantum dot material 272, and a scattering layer 273 are respectively disposed in different second through holes V, wherein the second through holes V corresponding to the red quantum dot layer 271, the green quantum dot material 272, and the scattering layer 273 are arranged in sequence.
The red quantum dot layer 271, the green quantum dot material 272, and the scattering layer 273 are separated by the barrier layer 274.
The length of the second through hole corresponding to the red quantum dot layer is the same as that of the second through hole corresponding to the green quantum dot layer; the length of the second through hole corresponding to the red quantum dot layer is greater than that of the second through hole corresponding to the scattering layer; the widths of the second through holes corresponding to the red quantum dot layer, the green quantum dot layer and the scattering layer are the same; specifically, the length of the second through hole corresponding to the red quantum dot layer and the green quantum dot layer is 130 μm, and the width thereof is 50 μm; the second through hole corresponding to the scattering layer has a length of 80 μm and a width of 50 μm. In the embodiment of the present invention, the length and the width of the second through hole may be set according to practical situations, and are not limited herein.
In the embodiment of the present invention, since the same material is disposed in the first groove Q and the second via hole V, the red quantum dot layer and the green quantum dot layer are thickened due to the disposition of the first groove Q. In addition, the thicker the thicknesses of the red and green quantum dot layers are, the higher the absorption efficiency and the conversion efficiency of light are, and thus the arrangement of the first groove Q can improve the absorption efficiency and the conversion efficiency of light of the red and green quantum dot layers.
Specifically, referring to fig. 7, an experiment is performed on the relationship between the thickness and the brightness of two quantum dot materials (quantum dot material a1 and quantum dot material a2), wherein the experiment method is to use the same blue light to excite the quantum dot materials, and to test the brightness of the light emitted by the quantum dot materials with different thicknesses, and it can be seen from the figure that the brightness of the light emitted by quantum dot material a and quantum dot material B is increased along with the increase of the thickness. Therefore, in the embodiment of the present invention, the first groove Q is provided, and the quantum dot material similar to the corresponding quantum dot layer is provided in the first groove Q, so that the luminance of the display panel can be improved.
In an embodiment of the present invention, a display panel includes: driving the back plate; a pixel defining layer disposed on the driving backplane, the pixel defining layer including a non-light emitting region and a plurality of light emitting regions; a first through hole is formed in the light emitting area; a first electrode layer disposed on the driving back plate in the first through hole; a light emitting layer covering the pixel defining layer and the first electrode layer; the second electrode layer is arranged on one surface, away from the driving back plate, of the light emitting layer; the filling layer is arranged on one surface, away from the light-emitting layer, of the second electrode layer; a plurality of first grooves are formed in one surface, away from the second electrode layer, of the filling layer, and the positions of the first grooves correspond to the positions of the first through holes one by one; the inner surface of the first groove is a curved surface; the curved surface protrudes towards the second electrode layer; the quantum dot light-emitting layer is arranged on one surface, away from the second electrode layer, of the filling layer; a plurality of second through holes are formed in the quantum dot light-emitting layer, and the positions of the second through holes correspond to the first grooves one by one; the second through holes and the corresponding first grooves are provided with the same material. In the embodiment of the invention, the first groove with the curved inner surface is arranged on the filling layer, and the same material is arranged in the second through hole and the corresponding first groove, so that on one hand, the curved first groove can collect blue light with a large angle emitted by the luminescent layer, and thus quantum dot materials in the first groove and the second through hole can receive more light, and further the light conversion efficiency of the quantum dot luminescent layer is improved; on the other hand, the thickness of the quantum dot material for receiving light can be improved by arranging the first groove, the absorption and conversion efficiency of the light can be improved by improving the thickness of the quantum dot material, and the brightness of the display panel is further improved.
It is clear to those skilled in the art that, for convenience and brevity of description, the specific working processes of the above-described systems, apparatuses and units may refer to the corresponding processes in the foregoing method embodiments, and are not described herein again.
The above description is only exemplary of the present invention and should not be taken as limiting the invention, and any modifications, equivalents, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily think of the changes or substitutions within the technical scope of the present invention, and shall cover the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A display panel, comprising:
driving the back plate;
a pixel defining layer disposed on the driving backplane, the pixel defining layer including a non-light emitting region and a plurality of light emitting regions; a first through hole is formed in the light emitting area;
a first electrode layer disposed on the driving back plate in the first through hole;
a light emitting layer covering the pixel defining layer and the first electrode layer;
the second electrode layer is arranged on one surface, away from the driving back plate, of the light emitting layer;
the filling layer is arranged on one surface, away from the light-emitting layer, of the second electrode layer; a plurality of first grooves are formed in one surface, away from the second electrode layer, of the filling layer, and the positions of the first grooves correspond to the positions of the first through holes one by one; the inner surface of the first groove is a curved surface; the curved surface protrudes towards the second electrode layer;
the quantum dot light-emitting layer is arranged on one surface, away from the second electrode layer, of the filling layer; a plurality of second through holes are formed in the quantum dot light-emitting layer, and the positions of the second through holes correspond to the first grooves one by one; the second through holes and the corresponding first grooves are provided with the same material.
2. The display panel according to claim 1, wherein the filling layer comprises: a first encapsulation layer and a transparent layer;
the first packaging layer is arranged on one surface, away from the light-emitting layer, of the second electrode layer; the transparent layer is arranged on one side, facing away from the second electrode layer, of the first packaging layer; the first groove is disposed in the transparent layer.
3. The display panel of claim 2, wherein the transparent layer has a refractive index greater than or equal to 1.7.
4. The display panel according to claim 1, wherein a plurality of second grooves are provided on the non-light emitting region of the pixel defining layer, the second grooves being spaced apart from the first through holes; the part of the light-emitting layer in the second groove is recessed towards the driving back plate; the second electrode layer is recessed toward the driving back plate at a portion of the second groove.
5. The display panel according to claim 1, wherein the light emitting layer is recessed toward the driving backplane at a portion of the first through hole; the second electrode layer is recessed toward the driving back plate at a portion of the first through hole.
6. The display panel according to claim 1, wherein the light emitting layer emits blue light.
7. The display panel according to claim 6, wherein a red quantum dot layer, a green quantum dot material and a scattering layer are respectively disposed in different second through holes, wherein the second through holes corresponding to the red quantum dot layer, the green quantum dot material and the scattering layer are arranged in sequence.
8. The display panel according to claim 1, wherein a cross-sectional shape of the first through-hole includes: a trapezoid shape; the first bottom edge of the trapezoid faces the driving back plate; the length of the first base of the trapezoid is smaller than the length of the second base of the trapezoid.
9. The display panel of claim 2, wherein the shape of the orthographic projection of the second groove on the driving backplane comprises: at least one of a circular shape, a square shape, or a square shape.
10. The display panel according to claim 1, wherein the curved surface comprises: hemispherical or semi-cylindrical curved surfaces.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110189478.3A CN114975514A (en) | 2021-02-19 | 2021-02-19 | Display panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110189478.3A CN114975514A (en) | 2021-02-19 | 2021-02-19 | Display panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114975514A true CN114975514A (en) | 2022-08-30 |
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| US20050194896A1 (en) * | 2004-03-03 | 2005-09-08 | Hitachi Displays, Ltd. | Light emitting element and display device and illumination device using the light emitting element |
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| US20190148460A1 (en) * | 2017-11-15 | 2019-05-16 | Samsung Electronics Co., Ltd. | Display apparatus and method of manufacturing the same |
| CN110581230A (en) * | 2019-09-16 | 2019-12-17 | 合肥鑫晟光电科技有限公司 | Display panel, manufacturing method and display device |
| CN111697162A (en) * | 2020-06-29 | 2020-09-22 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
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| JP2002184567A (en) * | 2000-12-15 | 2002-06-28 | Canon Inc | Organic luminescent element and manufacturing method |
| US20050194896A1 (en) * | 2004-03-03 | 2005-09-08 | Hitachi Displays, Ltd. | Light emitting element and display device and illumination device using the light emitting element |
| CN207116483U (en) * | 2017-09-06 | 2018-03-16 | 京东方科技集团股份有限公司 | A kind of array base palte and display device |
| US20190148460A1 (en) * | 2017-11-15 | 2019-05-16 | Samsung Electronics Co., Ltd. | Display apparatus and method of manufacturing the same |
| CN110581230A (en) * | 2019-09-16 | 2019-12-17 | 合肥鑫晟光电科技有限公司 | Display panel, manufacturing method and display device |
| CN111697162A (en) * | 2020-06-29 | 2020-09-22 | 京东方科技集团股份有限公司 | Display panel, preparation method thereof and display device |
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