CN114975210A - 晶圆加热转移装置和化学气相沉积设备 - Google Patents

晶圆加热转移装置和化学气相沉积设备 Download PDF

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CN114975210A
CN114975210A CN202210888360.4A CN202210888360A CN114975210A CN 114975210 A CN114975210 A CN 114975210A CN 202210888360 A CN202210888360 A CN 202210888360A CN 114975210 A CN114975210 A CN 114975210A
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heating
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戴建波
孙文彬
刘龙龙
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Jiangsu Yiwen Microelectronics Technology Co Ltd
Advanced Materials Technology and Engineering Inc
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Advanced Materials Technology and Engineering Inc
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Abstract

本发明的实施例提供了一种晶圆加热转移装置和化学气相沉积设备，涉及半导体技术领域。晶圆加热转移装置包括加热盘、转移手指和驱动机构，加热盘中部开设有通孔，在通孔的周围还开设有多个凹槽，加热盘用于承载晶圆、并对晶圆加热；转移手指安装在凹槽内，转移手指用于转移晶圆；驱动机构安装在通孔内，驱动机构与转移手指连接，驱动机构用于带动转移手指相对于加热盘升降、旋转。其中，凹槽的形状与转移手指的形状相适配，转移手指包括主干和多个分支，多个分支连接在主干的同一侧，相邻两个转移手指的分支用于支撑起同一个晶圆。晶圆加热转移装置能够提高晶圆受热的均匀性，使晶圆上产生的沉积膜的厚度均匀。

Description

晶圆加热转移装置和化学气相沉积设备
技术领域
本发明涉及半导体技术领域，具体而言，涉及一种晶圆加热转移装置和化学气相沉积设备。
背景技术
等离子体增强化学气相沉积（PECVD）是利用射频，使含有薄膜成分原子的气体电离，在局部形成等离子体，而等离子体化学活性很强，很容易发生反应，在基片上沉积出所要求的薄膜。
现有的化学气相沉积设备中，由于是将热盘上开设容纳转移手指的凹槽，控制两根转移手指从热盘的凹槽中升起，即可将晶圆抬起来进行转移，而由于凹槽的尺寸以及开设位置，使晶圆的较大面积都处在凹槽的正上方，然而热盘上凹槽的位置对晶圆的加热效果较差，热盘上未开槽的实体位置对晶圆的加热效果较好，导致晶圆的受热不均匀，晶圆上产生的沉积膜的厚度不满足要求。
发明内容
本发明的目的包括提供了一种晶圆加热转移装置和化学气相沉积设备，其能够提高晶圆受热的均匀性，使晶圆上产生的沉积膜的厚度均匀。
本发明的实施例可以这样实现：
第一方面，本发明提供一种晶圆加热转移装置，晶圆加热转移装置包括：
加热盘，中部开设有通孔，在通孔的周围还开设有多个凹槽，加热盘用于承载晶圆、并对晶圆加热；
转移手指，安装在凹槽内，转移手指用于转移晶圆；
驱动机构，安装在通孔内，驱动机构与转移手指连接，驱动机构用于带动转移手指相对于加热盘升降、旋转；
其中，凹槽的形状与转移手指的形状相适配，转移手指包括主干和多个分支，多个分支连接在主干的同一侧，相邻两个转移手指的分支用于支撑起同一个晶圆。
本发明实施例提供的晶圆加热转移装置的有益效果包括：
1.将每个转移手指设计为主干与分支的组合，再利用相邻两个转移手指的分支支撑起同一个晶圆，这样，避免容纳主干的凹槽部分穿过加热盘上用于加热晶圆的区域，只有分支会占用一小部分加热盘上用于加热晶圆的区域，从而增大加热盘上用于加热晶圆的有效面积；
2.分支支撑在晶圆的边缘，对应的用于容纳分支的凹槽部分也位于晶圆的边缘，晶圆中部的大部分区域都是正对加热盘上有效的加热面积，使整个晶圆的受热均匀性较好，晶圆上产生的沉积膜的厚度更加均匀。
在可选的实施方式中，支撑起同一个晶圆的两个转移手指关于二者的中心线呈对称设置，支撑起同一个晶圆的两个转移手指的分支相向设置。
这样，支撑起同一个晶圆的两个转移手指只有分支的部分区域与晶圆接触，对应的，加热盘上的凹槽只有用于容纳分支的部分区域处在晶圆的正下方，使加热盘上对晶圆的有效加热面积最大化。
在可选的实施方式中，晶圆在加热盘上的正投影位于支撑起同一个晶圆的两个转移手指的主干之间。
这样，转移手指的主干以及凹槽中用于容纳主干的部分不会占用加热盘上对晶圆的有效加热面积，使加热盘上对晶圆的有效加热面积最大化。
在可选的实施方式中，支撑起同一个晶圆的两个转移手指的主干之间的距离从连接驱动机构的一端到另一端逐渐远离增大。
在可选的实施方式中，支撑起同一个晶圆的两个转移手指的主干之间的夹角a为：50°~70°。
这样，支撑起同一个晶圆的两个转移手指的主干之间的区域较小、且足以容纳一个晶圆，不仅不会影响对晶圆的加热效果，还能够使加热盘上同时对更多的晶圆进行加热，提高加工效率。
在可选的实施方式中，转移手指包括两个分支，两个分支间隔设置在主干上。
这样，转移手指不仅能够支撑起晶圆，而且结构简单、所需的凹槽的面积最小，保留的加热盘上的有效加热面积最大。
在可选的实施方式中，转移手指上的两个分支用于分别支撑在晶圆的上半部分和下半部分。
这样，相邻两个转移手指能够稳定地支撑起晶圆，避免晶圆被转移手指抬起后因一半部分悬空而从转移手指上跌落。
在可选的实施方式中，分支包括依次连接的连接段、过渡段和支撑段，连接段连接在主干上，支撑段的上表面用于承载晶圆。
在可选的实施方式中，过渡段的上表面为斜面，斜面的高度从连接连接段的一端到连接支撑段的一端逐渐降低，支撑段的上表面为水平面。
这样，过渡段上的斜面可以对晶圆起到导向作用，使晶圆能够滑落到支撑段，而且，支撑段的上表面高度较低、且为水平面，能够对晶圆起到限位作用，从而稳定地支撑起晶圆。
第二方面，本发明提供一种化学气相沉积设备，化学气相沉积设备包括前述实施方式任一项晶圆加热转移装置。
本发明实施例提供的化学气相沉积设备不仅能够增大加热盘上用于加热晶圆的有效面积，而且使整个晶圆的受热均匀性较好，晶圆上产生的沉积膜的厚度更加均匀。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例中所需要使用的附图作简单地介绍，应当理解，以下附图仅示出了本发明的某些实施例，因此不应被看作是对范围的限定，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他相关的附图。
图1为本发明第一实施例提供的晶圆加热转移装置的轴测视图；
图2为本发明第一实施例提供的晶圆加热转移装置的分解示意图；
图3为本发明第一实施例提供的晶圆加热转移装置的俯视图；
图4为加热盘的俯视图；
图5为支撑起同一个晶圆的两个转移手指的结构示意图。
图标：100-晶圆加热转移装置；1-加热盘；11-通孔；12-凹槽；2-转移手指；21-主干；22-分支；221-连接段；222-过渡段；223-斜面；224-支撑段；225-水平面；3-驱动机构；200-晶圆。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。通常在此处附图中描述和示出的本发明实施例的组件可以以各种不同的配置来布置和设计。
因此，以下对在附图中提供的本发明的实施例的详细描述并非旨在限制要求保护的本发明的范围，而是仅仅表示本发明的选定实施例。基于本发明中的实施例，本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
应注意到：相似的标号和字母在下面的附图中表示类似项，因此，一旦某一项在一个附图中被定义，则在随后的附图中不需要对其进行进一步定义和解释。
在本发明的描述中，需要说明的是，若出现术语“上”、“下”、“内”、“外”等指示的方位或位置关系为基于附图所示的方位或位置关系，或者是该发明产品使用时惯常摆放的方位或位置关系，仅是为了便于描述本发明和简化描述，而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作，因此不能理解为对本发明的限制。
此外，若出现术语“第一”、“第二”等仅用于区分描述，而不能理解为指示或暗示相对重要性。
需要说明的是，在不冲突的情况下，本发明的实施例中的特征可以相互结合。
第一实施例
请参考图1和图2，本实施例提供了一种晶圆加热转移装置100，晶圆加热转移装置100包括加热盘1、转移手指2和驱动机构3。
加热盘1用于承载晶圆200、并对晶圆200加热。加热盘1中部开设有通孔11，在通孔11的周围还开设有多个凹槽12，转移手指2安装在凹槽12内，转移手指2用于转移晶圆200，驱动机构3安装在通孔11内，驱动机构3与转移手指2连接，驱动机构3用于带动转移手指2相对于加热盘1升降、旋转。
其中，凹槽12的形状与转移手指2的形状相适配，也就是说，凹槽12的形状与转移手指2的形状基本相同，只要凹槽12恰能够容纳转移手指2即可。
请参阅图3至图5，转移手指2包括主干21和多个分支22，多个分支22连接在主干21的同一侧，相邻两个转移手指2的分支22用于支撑起同一个晶圆200。
这样，避免容纳主干21的凹槽12部分穿过加热盘1上用于加热晶圆200的区域，只有分支22会占用一小部分加热盘1上用于加热晶圆200的区域，从而增大加热盘1上用于加热晶圆200的有效面积。而且，分支22支撑在晶圆200的边缘，对应的用于容纳分支22的凹槽12部分也位于晶圆200的边缘，晶圆200中部的大部分区域都是正对加热盘1上有效的加热面积，使整个晶圆200的受热均匀性较好，晶圆200上产生的沉积膜的厚度更加均匀。
本实施例中，每个转移手指2包括两个分支22，两个分支22间隔设置在主干21上。这样，转移手指2不仅能够支撑起晶圆200，而且结构简单、所需的凹槽12的面积最小，保留的加热盘1上的有效加热面积最大。
转移手指2上的两个分支22用于分别支撑在晶圆200的上半部分和下半部分。这样，相邻两个转移手指2能够稳定地支撑起晶圆200，避免晶圆200被转移手指2抬起后因一半部分悬空而从转移手指2上跌落。
请参阅图3和图4，支撑起同一个晶圆200的两个转移手指2关于二者的中心线呈对称设置，支撑起同一个晶圆200的两个转移手指2的分支22相向设置。这样，支撑起同一个晶圆200的两个转移手指2只有分支22的部分区域与晶圆200接触，对应的，加热盘1上的凹槽12只有用于容纳分支22的部分区域处在晶圆200的正下方，使加热盘1上对晶圆200的有效加热面积最大化。
晶圆200在加热盘1上的正投影位于支撑起同一个晶圆200的两个转移手指2的主干21之间。这样，转移手指2的主干21以及凹槽12中用于容纳主干21的部分不会占用加热盘1上对晶圆200的有效加热面积，使加热盘1上对晶圆200的有效加热面积最大化。
支撑起同一个晶圆200的两个转移手指2的主干21之间的距离从连接驱动机构3的一端到另一端逐渐远离增大。支撑起同一个晶圆200的两个转移手指2的主干21之间的夹角a为：50°~70°，优选为60°。这样，支撑起同一个晶圆200的两个转移手指2的主干21之间的区域较小、且足以容纳一个晶圆200，不仅不会影响对晶圆200的加热效果，还能够使加热盘1上同时对更多的晶圆200进行加热，提高加工效率。
在其它实施例中，每个主干21还可以连接三个分支22，三个分支22间隔设置，进一步提高对晶圆200支撑的稳定性。
请参阅图5，分支22包括依次连接的连接段221、过渡段222和支撑段224，连接段221连接在主干21上，支撑段224的上表面用于承载晶圆200。
具体的，过渡段222的上表面为斜面223，斜面223的高度从连接连接段221的一端到连接支撑段224的一端逐渐降低，支撑段224的上表面为水平面225。这样，过渡段222上的斜面223可以对晶圆200起到导向作用，使晶圆200能够滑落到支撑段224，而且，支撑段224的上表面高度较低、且为水平面225，能够对晶圆200起到限位作用，从而稳定地支撑起晶圆200。
本实施例提供的晶圆加热转移装置100的有益效果包括：
1.将每个转移手指2设计为主干21与分支22的组合，再利用相邻两个转移手指2的分支22支撑起同一个晶圆200，这样，避免容纳主干21的凹槽12部分穿过加热盘1上用于加热晶圆200的区域，只有分支22会占用一小部分加热盘1上用于加热晶圆200的区域，从而增大加热盘1上用于加热晶圆200的有效面积；
2.分支22支撑在晶圆200的边缘，对应的用于容纳分支22的凹槽12部分也位于晶圆200的边缘，晶圆200中部的大部分区域都是正对加热盘1上有效的加热面积，使整个晶圆200的受热均匀性较好，晶圆200上产生的沉积膜的厚度更加均匀；
3.支撑起同一个晶圆200的两个转移手指2的主干21之间的区域较小、且足以容纳一个晶圆200，不仅不会影响对晶圆200的加热效果，还能够使加热盘1上同时对更多的晶圆200进行加热，提高加工效率；
4.过渡段222上的斜面223可以对晶圆200起到导向作用，使晶圆200能够滑落到支撑段224，而且，支撑段224的上表面高度较低、且为水平面225，能够对晶圆200起到限位作用，从而稳定地支撑起晶圆200。
第二实施例
本实施例提供了一种化学气相沉积设备，化学气相沉积设备包括真空腔室和第一实施例提供的晶圆加热转移装置100，晶圆加热转移装置100设置在真空腔室内，晶圆加热转移装置100用于加热晶圆200，并在晶圆200上沉积所需的薄膜。
本实施例提供的化学气相沉积设备不仅能够增大加热盘1上用于加热晶圆200的有效面积，而且使整个晶圆200的受热均匀性较好，晶圆200上产生的沉积膜的厚度更加均匀。
以上，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到的变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以权利要求的保护范围为准。

Claims (10)

1.一种晶圆加热转移装置，其特征在于，所述晶圆加热转移装置包括：
加热盘（1），中部开设有通孔（11），在所述通孔（11）的周围还开设有多个凹槽（12），所述加热盘（1）用于承载晶圆（200）、并对所述晶圆（200）加热；
转移手指（2），安装在所述凹槽（12）内，所述转移手指（2）用于转移所述晶圆（200）；
驱动机构（3），安装在所述通孔（11）内，所述驱动机构（3）与所述转移手指（2）连接，所述驱动机构（3）用于带动所述转移手指（2）相对于所述加热盘（1）升降、旋转；
其中，所述凹槽（12）的形状与所述转移手指（2）的形状相适配，所述转移手指（2）包括主干（21）和多个分支（22），多个所述分支（22）连接在所述主干（21）的同一侧，相邻两个所述转移手指（2）的所述分支（22）用于支撑起同一个所述晶圆（200）。
2.根据权利要求1所述的晶圆加热转移装置，其特征在于，支撑起同一个所述晶圆（200）的两个所述转移手指（2）关于二者的中心线呈对称设置，支撑起同一个所述晶圆（200）的两个所述转移手指（2）的所述分支（22）相向设置。
3.根据权利要求1所述的晶圆加热转移装置，其特征在于，所述晶圆（200）在所述加热盘（1）上的正投影位于支撑起同一个所述晶圆（200）的两个所述转移手指（2）的所述主干（21）之间。
4.根据权利要求1所述的晶圆加热转移装置，其特征在于，支撑起同一个所述晶圆（200）的两个所述转移手指（2）的所述主干（21）之间的距离从连接所述驱动机构（3）的一端到另一端逐渐远离增大。
5.根据权利要求4所述的晶圆加热转移装置，其特征在于，支撑起同一个所述晶圆（200）的两个所述转移手指（2）的所述主干（21）之间的夹角a为：50°~70°。
6.根据权利要求1所述的晶圆加热转移装置，其特征在于，所述转移手指（2）包括两个所述分支（22），两个所述分支（22）间隔设置在所述主干（21）上。
7.根据权利要求1所述的晶圆加热转移装置，其特征在于，所述转移手指（2）上的两个所述分支（22）用于分别支撑在所述晶圆（200）的上半部分和下半部分。
8.根据权利要求1所述的晶圆加热转移装置，其特征在于，所述分支（22）包括依次连接的连接段（221）、过渡段（222）和支撑段（224），所述连接段（221）连接在所述主干（21）上，所述支撑段（224）的上表面用于承载所述晶圆（200）。
9.根据权利要求8所述的晶圆加热转移装置，其特征在于，所述过渡段（222）的上表面为斜面（223），所述斜面（223）的高度从连接所述连接段（221）的一端到连接所述支撑段（224）的一端逐渐降低，所述支撑段（224）的上表面为水平面（225）。
10.一种化学气相沉积设备，其特征在于，所述化学气相沉积设备包括权利要求1~9任一项所述晶圆加热转移装置。
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5951770A (en) * 1997-06-04 1999-09-14 Applied Materials, Inc. Carousel wafer transfer system
US20020170672A1 (en) * 1997-06-04 2002-11-21 Ilya Perlov Method and apparatus for improved substrate handling
US20030136513A1 (en) * 2001-01-22 2003-07-24 Lee Soon Ho Semiconductor manufacturing apparatus
US20150122876A1 (en) * 2013-11-04 2015-05-07 Solid State Equipment Llc System and method for flux coat, reflow and clean
CN114097070A (zh) * 2019-07-12 2022-02-25 应用材料公司 用于同时的基板传送的机器人
CN114695243A (zh) * 2022-03-02 2022-07-01 北京北方华创微电子装备有限公司 半导体腔室的承载装置及半导体腔室

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5951770A (en) * 1997-06-04 1999-09-14 Applied Materials, Inc. Carousel wafer transfer system
US20020170672A1 (en) * 1997-06-04 2002-11-21 Ilya Perlov Method and apparatus for improved substrate handling
US20030136513A1 (en) * 2001-01-22 2003-07-24 Lee Soon Ho Semiconductor manufacturing apparatus
US20150122876A1 (en) * 2013-11-04 2015-05-07 Solid State Equipment Llc System and method for flux coat, reflow and clean
CN114097070A (zh) * 2019-07-12 2022-02-25 应用材料公司 用于同时的基板传送的机器人
CN114695243A (zh) * 2022-03-02 2022-07-01 北京北方华创微电子装备有限公司 半导体腔室的承载装置及半导体腔室

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