CN114899685A - Compact type on-board wide-temperature solid laser - Google Patents
Compact type on-board wide-temperature solid laser Download PDFInfo
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- CN114899685A CN114899685A CN202210441350.6A CN202210441350A CN114899685A CN 114899685 A CN114899685 A CN 114899685A CN 202210441350 A CN202210441350 A CN 202210441350A CN 114899685 A CN114899685 A CN 114899685A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/10038—Amplitude control
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/0405—Conductive cooling, e.g. by heat sinks or thermo-electric elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/02—Constructional details
- H01S3/04—Arrangements for thermal management
- H01S3/042—Arrangements for thermal management for solid state lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/13—Stabilisation of laser output parameters, e.g. frequency or amplitude
- H01S3/136—Stabilisation of laser output parameters, e.g. frequency or amplitude by controlling devices placed within the cavity
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- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Optics & Photonics (AREA)
- Lasers (AREA)
Abstract
The invention discloses a compact type machine-mounted wide-temperature solid laser, which comprises a biorthogonal Porro prism group, a 0.57 lambda wave plate, a Q-switch, a polarization beam splitter prism, a laser slab crystal, a laser diode pumping source, a pumping smoothing device, a 0.25 lambda wave plate, a 45-degree output reflector, a laser diode array heat sink and a laser slab crystal heat sink; and by the integrated heat sink design, the TEC is used for accurately controlling the temperature of the laser diode array and the laser slab crystal. The laser has the characteristics of compact structure, stable performance, low cost, portability and the like, can realize laser output with high pulse energy and high beam quality, and can continuously and stably work under the condition of airborne vibration and in a wide temperature range of-30 ℃ to 50 ℃.
Description
Technical Field
The invention relates to the technical field of lasers, in particular to a compact type on-board wide-temperature solid laser.
Background
The compact high-energy diode pumped solid laser has high efficiency, small volume, light weight and strong reliability and is widely applied to the fields of scientific research, industrial processing, airborne military, space detection and the like. Due to the complexity and differentiation of the use environment, particularly the field application environment, many airborne application scenarios require that the laser not only can work under the detuning condition of the resonant cavity caused by vibration, but also can bear a large temperature variation range and still stably output.
However, the absorption coefficient of the solid-state gain medium is largely dependent on the optical pumping wavelength, and any ambient temperature variation closely related to the emission wavelength of the laser diode will ultimately affect the output performance of the diode-pumped solid-state laser. How to improve the wide-temperature working stability of the solid laser is an urgent problem to be solved. In order to realize normal and stable operation of a laser diode pumped all-solid-state laser in a wide temperature range, a common method is to introduce a temperature-insensitive VCSEL pump source or a multi-wavelength laser diode pump array to match with a gain medium absorption spectrum so as to realize stable operation of the solid-state laser under a wide temperature condition to a certain extent, but the methods and the like need to pay great cost in the aspects of laser cost, compactness and output efficiency, and violate the design principle of compactness, reliability and research and development cost control. This limits the range of applications of such lasers to a large extent.
Disclosure of Invention
The invention aims to provide a compact onboard wide-temperature solid laser, which solves the problems in the prior art. The laser has the characteristics of compact structure, stable performance, low cost, portability and the like, can realize laser output with high pulse energy and high beam quality, and can continuously and stably work under the condition of airborne vibration and in a wide temperature range of-30 ℃ to 50 ℃.
In order to solve the technical problems, the invention adopts the technical scheme that:
a compact type on-board wide-temperature solid laser comprises a first Porro prism, a first wave plate, a Q-switch, a polarization beam splitter prism, a laser slab crystal, a pumping smoothing device, a laser diode pumping source, a second wave plate, a second Porro prism, a reflector, a laser diode array heat sink (11) and a laser slab crystal heat sink; the first Porro prism, the first wave plate, the Q-switch, the polarization splitting prism, the laser slab crystal, the second wave plate and the second Porro prism (9) are sequentially arranged and are all positioned on the same optical axis, and ridge lines of the first Porro prism (1) and the second Porro prism are orthogonal to each other; the laser diode array heat sink and the laser slab crystal heat sink are arranged oppositely, a laser diode pumping source is arranged on the opposite side of the laser diode array heat sink, a corresponding laser slab crystal is arranged on the opposite side of the laser slab crystal heat sink, and the pumping even-sliding device is arranged between the laser diode pumping source and the laser slab crystal; the reflecting mirror is provided corresponding to the polarization splitting prism, and the laser light output from the polarization splitting prism is output in the horizontal direction by the reflecting mirror.
As a further preferred aspect of the invention, the laser slab crystal is a Nd: YAG slab crystal of 6mm by 96mm with a doping concentration of 1 at.%; the two end faces of the Nd-YAG slab crystal are cut into 28.8 degrees according to the Brewster angle, and the laser can complete 9 total internal reflection transmissions in the Nd-YAG slab crystal.
As a further preferred embodiment of the present invention, the laser diode pump source is four semiconductor diode arrays arranged equidistantly along the length direction of the laser slab crystal.
As a further preferable mode of the invention, an antireflection film is plated on the side, opposite to the laser diode pumping source, of the laser slab crystal, and a high-reflection film is plated on the side, in contact with the laser slab crystal heat sink, of the laser slab crystal.
As a further preferable mode of the present invention, both ends of the laser slab crystal are plated with antireflection films.
As a further preferred aspect of the present invention, the Q-switch is an electro-optical Q-switch, and the electro-optical Q-switch crystal of the Q-switch is KD × P or RTP.
As a further preferred aspect of the present invention, the pump smoothing device is a slab-shaped quartz glass cube.
As a further preference of the invention, the laser plate heat sink also comprises a TEC, and the TEC is respectively connected with the laser diode array heat sink and the laser slab crystal heat sink.
As a further preferred aspect of the present invention, the mirror is a 45 ° mirror.
As a further preferred aspect of the present invention, the first wave plate is a 0.57 λ plate, and the second wave plate is a 0.25 λ plate.
The invention has the following beneficial effects:
(1) the adoption of the biorthogonal Porro prism to combine the polarization output cavity type greatly improves the capability of the solid laser light source for resisting airborne vibration and cavity mirror detuning caused by wide-temperature environment.
(2) And by combining a compact heat sink design, the high-precision temperature control unit can effectively control the temperature of the laser crystal and the pumping source, so that the capability of the solid laser for keeping stable output in a wide-temperature environment is greatly improved.
(3) The laser has the advantages of good output beam quality, large pulse energy, compact structure, stable performance, low cost and the like, and can continuously and stably work under the airborne vibration condition and in severe environments such as a wide temperature range of-30 ℃ to 50 ℃. The laser shock-absorbing material is particularly suitable for various fields of airborne radar, space exploration, military national defense, handheld laser shock reinforcement and the like.
Drawings
FIG. 1 is a schematic structural diagram of a compact, on-board, wide-temperature solid-state laser of the present invention;
FIG. 2 is an enlarged schematic view of a portion of the compact, on-board, wide temperature solid-state laser of the present invention;
FIG. 3 is a graph of energy output test of the compact airborne wide-temperature solid laser under the wide-temperature condition of-30 ℃ to 50 ℃.
Among them are: 1. a first Porro prism; 2. a first wave plate; 3. a Q-switch; 4. a polarization splitting prism; 5. a laser slab crystal; 6. a pump smoothing device; 7. a laser diode pump source; 8. a second wave plate; 9. a second Porro prism; 10. a mirror; 11. a laser diode array heat sink; 12. laser slab crystal heat sink; TEC; 14. a card seat.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific preferred embodiments.
In the description of the present invention, it is to be understood that the terms "left side", "right side", "upper part", "lower part", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of describing the present invention and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and that "first", "second", etc., do not represent an important degree of the component parts, and thus are not to be construed as limiting the present invention. The specific dimensions used in the present example are only for illustrating the technical solution and do not limit the scope of protection of the present invention.
As shown in fig. 1-3, a compact type on-board wide-temperature solid laser includes a first Porro prism 1, a first wave plate 2, a Q-switch 3, a polarization beam splitter prism 4, a laser slab crystal 5, a pump smoothing device 6, a laser diode pump source 7, a second wave plate 8, a second Porro prism 9, a reflector 10, a laser diode array heat sink 11, and a laser slab crystal heat sink 12;
first Porro prism 1 sets gradually and all is in on the same optical axis with first wave plate 2, transfer Q switch 3, polarization beam splitter prism 4, laser lath crystal 5, second wave plate 8 and second Porro prism 9, and first Porro prism 1 and first wave plate 2, transfer Q switch 3, polarization beam splitter prism 4, laser lath crystal 5, second wave plate 8 and the central point of second Porro prism 9 all are in same epaxially promptly. And the ridges of the first Porro prisms 1 and the second Porro prisms 9 are orthogonal to each other. The first Porro prism 1 and the second Porro prism 9 are orthogonally arranged, and the selected ridge arrangement angles are 45 degrees and 135 degrees respectively.
The laser diode array heat sink 11 is a U-shaped structure with a U-shaped axial cross section, and as shown in fig. 2, the U-shaped structure is divided into a first vertical section, a second vertical section and a connecting section. The laser slab crystal heat sink 12 is arranged on the inner wall of the first vertical section of the U-shaped structure,
the laser diode array heat sink 11 of the second vertical section is arranged opposite to the laser slab crystal heat sink 12, a laser diode pumping source 7 is arranged on one side of the laser diode array heat sink 11 of the second vertical section, which is opposite to the laser slab crystal heat sink 12, a corresponding laser slab crystal 5 is arranged on one side of the laser slab crystal heat sink 12, the laser diode array heat sink 11 is made of forged red copper, and temperature control is carried out through TEC, air cooling or a combination mode of the materials. The laser slab crystal heat sink 12 is mounted on the inner wall of the first vertical section of the laser diode array heat sink 11 through fixing screws, and the accurate temperature control is realized through the high-accuracy large-size TEC13 together, so that the structure is compact and reliable.
The laser slab crystal heat sink 12 is designed in a groove type, and the laser slab crystal is arranged in the groove. The laser slab crystal heat sink 12 is made of tungsten-copper alloy, is tightly attached to three side faces of the laser slab crystal 5 welded by indium foil, and realizes accurate temperature control through the TEC.
The pumping uniform-sliding device 6 is a slab quartz glass cube and is fixedly installed between the laser slab crystal 5 and the laser diode pumping source 7 through the clamping seat 14, and the size of the pumping uniform-sliding device 6 is consistent with the length of the upper surface of the laser slab crystal 5. The reflecting mirror 10 is provided corresponding to the polarization splitting prism 4, and the laser light output from the polarization splitting prism 4 is output in the horizontal direction by the reflecting mirror 10. The pumping light is pumped at the total reflection point inside the laser slab crystal 5 through the pumping smoothing device 6, so that the pumping efficiency is improved to the maximum extent.
The laser slab crystal 5 is Nd of 6mm 96mm, namely a YAG slab crystal, and the doping concentration is 1 at%; the two end faces of the Nd-YAG slab crystal are cut into 28.8 degrees according to the Brewster angle, and the laser can complete 9 total internal reflection transmissions in the Nd-YAG slab crystal.
The laser diode pumping source 7 is four semiconductor diode arrays which are arranged at equal intervals along the length direction of the laser slab crystal 5. Each array consisted of 6 bars with a single bar maximum power of 200W, a repetition rate adjustable between 1-25Hz and a pulse width set at 200 mus to match the fluorescence lifetime of the Nd: YAG material. The maximum energy of the laser diode pump is 960 mJ.
The side, opposite to the laser diode pumping source 7, of the laser slab crystal 5 is plated with an antireflection film of 800-810 nm, and the side, in contact with the laser slab crystal heat sink 12, of the laser slab crystal 5 is plated with a high-reflection film of 800-810 nm, so that the pumping absorption efficiency is improved.
And two ends of the laser slab crystal 5 are plated with anti-reflection films of 1064nm so as to reduce parasitic oscillation effect.
The Q-switch 3 is an electro-optic Q-switch, and an electro-optic Q-switch crystal of the Q-switch 3 is KD x P. The Q-switch 3 is an electro-optical Q-switch, and the electro-optical Q-switch crystal is KD x P. In order to obtain the maximum energy pulse laser output, the electro-optical Q-switch is precisely clock-synchronized with the laser diode pump source 7. The polarized output laser is further bent by 90 degrees through the reflector 10 to be output, and the maximum structural compactness is realized.
The first Porro prism 1, the first wave plate 2, the Q-switch 3 and the polarization beam splitter prism 4 form a reflection wall of the laser, and the laser slab crystal 5, the second wave plate 8, the second Porro prism 9 and the polarization beam splitter prism 4 form an output wall of the laser. After the pumping starts, when the Q-switch 3 is not applied with voltage, the horizontal polarized light becomes vertical polarized light through the reflecting wall, and the vertical polarized light is reflected out of the resonant cavity by the reflector 10 when passing through the polarization beam splitter prism 4, so that the loss is extremely high, the Q value is extremely low, and laser oscillation is difficult to form. At a certain moment, after voltage is applied to the Q-switching switch, the polarization state of horizontal polarized light is not changed after the horizontal polarized light is reflected by the reflection wall, so that the horizontal polarized light continuously enters the output wall, then the horizontal polarized light is reflected by the second Porro prism 9 and transmitted on the output wall twice, the horizontal polarized light is changed into elliptical polarized light, the vertical component of the elliptical polarized light is output by the polarization beam splitter prism 4, the horizontal component is remained in the cavity to continuously oscillate, and the steps are repeated to form Q-switching pulse laser output. The intracavity oscillating photon density and output ratio can be adjusted by rotating the second wave plate 8.
And the TEC13 is further included, and the TEC13 is respectively connected with the laser diode array heat sink 11 and the laser slab crystal heat sink 12. Fig. 2 is a schematic structural diagram of a gain and temperature control module of the compact airborne wide-temperature solid-state laser according to the invention. The laser slab crystal 52 is wrapped and installed in a groove of the laser slab crystal heat sink 11 made of tungsten copper through indium foil, so that the matching of thermal expansion coefficients is realized while the efficient heat conduction is realized. The pumping smoothing device 6 is a slab-shaped quartz glass cube and is fixedly arranged between the laser slab crystal 5 and the laser diode pumping source 7 through a clamping seat 14. The laser diode array heat sink 11 is made of forged red copper. The laser diode array heat sink 11 and the laser slab crystal heat sink 12 realize accurate temperature control through the high-precision large-size TEC13, and the structure is compact and reliable.
The reflecting mirror 10 is a plane mirror with a certain angle, preferably a plane mirror arranged at 45 degrees. The mirror 10 functions to adjust the angle of the laser light vertically output through the polarization splitting prism 4 to be output in the horizontal direction. The first wave plate 2 is a 0.57 lambda plate, and the second wave plate 8 is a 0.25 lambda plate.
FIG. 3 is a graph of energy output test of the compact airborne wide-temperature solid laser under the wide-temperature condition of-30 ℃ to 50 ℃. During experimental tests, the pumping current is 115A, the corresponding pumping energy is 535mJ, the repetition frequency is 25Hz, the maximum output energy is 101mJ, and the maximum light-light conversion efficiency is 18.9%. However, the light-to-light conversion efficiency of a general wide-temperature solid-state laser is hardly more than 15%. The compact type airborne wide-temperature solid laser has stable output energy curve overall under wide-temperature environment, has stable overall output, and can meet the application requirements of various fields such as airborne radar, space exploration, military and national defense, handheld laser shock peening and the like.
Although the preferred embodiments of the present invention have been described in detail, the present invention is not limited to the details of the embodiments, and various equivalent modifications can be made within the technical spirit of the present invention, and the scope of the present invention is also within the scope of the present invention.
Claims (10)
1. A compact machine carries wide temperature solid laser which characterized in that: the laser diode array heat sink comprises a first Porro prism (1), a first wave plate (2), a Q-switch (3), a polarization beam splitting prism (4), a laser slab crystal (5), a pumping smoothing device (6), a laser diode pumping source (7), a second wave plate (8), a second Porro prism (9), a reflector (10), a laser diode array heat sink (11) and a laser slab crystal heat sink (12);
the first Porro prism (1), the first wave plate (2), the Q-switch (3), the polarization beam splitter prism (4), the laser slab crystal (5), the second wave plate (8) and the second Porro prism (9) are sequentially arranged and are all located on the same optical axis, and ridge lines of the first Porro prism (1) and the second Porro prism (9) are orthogonal to each other;
the laser diode array heat sink (11) and the laser slab crystal heat sink (12) are arranged oppositely, a laser diode pumping source (7) is arranged on the opposite side of the laser diode array heat sink (11), a corresponding laser slab crystal (5) is arranged on the opposite side of the laser slab crystal heat sink (12), and the pumping even-sliding device (6) is arranged between the laser diode pumping source (7) and the laser slab crystal (5); the reflecting mirror (10) is provided in correspondence with the polarization splitting prism (4), and the laser light output from the polarization splitting prism (4) is output in the horizontal direction by the reflecting mirror (10).
2. A compact on-board broad temperature solid state laser as claimed in claim 1 wherein: the laser slab crystal (5) is Nd: YAG slab crystal with 6mm 96mm, and the doping concentration is 1 at%; two end faces of the Nd-YAG slab crystal are cut into 28.8 degrees according to the Brewster angle, and the laser completes 9 total internal reflection transmissions in the Nd-YAG slab crystal.
3. A compact on-board broad temperature solid state laser as claimed in claim 2 wherein: the laser diode pumping source (7) is four semiconductor diode arrays which are arranged at equal intervals along the length direction of the laser slab crystal (5).
4. A compact on-board broad temperature solid state laser as claimed in claim 1 wherein: and an antireflection film is plated on one side of the laser slab crystal (5) opposite to the laser diode pumping source (7), and a high-reflection film is plated on one side of the laser slab crystal (5) in contact with the laser slab crystal heat sink (12).
5. A compact on-board wide temperature solid state laser as claimed in claim 2 wherein: and antireflection films are plated at two ends of the laser slab crystal (5).
6. A compact on-board broad temperature solid state laser as claimed in claim 1 wherein: the Q-switch (3) is an electro-optical Q-switch, and an electro-optical Q-switch crystal of the Q-switch (3) is KD x P or RTP.
7. A compact on-board broad temperature solid state laser as claimed in claim 1 wherein: the pump smoothing device (6) is a strip-shaped quartz glass cube.
8. A compact on-board broad temperature solid state laser as claimed in claim 1 wherein: the laser diode array heat sink structure further comprises a TEC (13), and the TEC (13) is respectively connected with the laser diode array heat sink (11) and the laser slab crystal heat sink (12).
9. A compact on-board broad temperature solid state laser as claimed in claim 1 wherein: the reflector (10) is a 45-degree reflector.
10. A compact on-board broad temperature solid state laser as claimed in claim 1 wherein: the first wave plate (2) is a 0.57 lambda wave plate, and the second wave plate (8) is a 0.25 lambda wave plate.
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CN202210441350.6A CN114899685A (en) | 2022-04-25 | 2022-04-25 | Compact type on-board wide-temperature solid laser |
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CN202210441350.6A CN114899685A (en) | 2022-04-25 | 2022-04-25 | Compact type on-board wide-temperature solid laser |
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