CN114892054A - Magnetic storage semi-metal material with exchange bias effect and preparation method thereof - Google Patents
Magnetic storage semi-metal material with exchange bias effect and preparation method thereof Download PDFInfo
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- 230000005291 magnetic effect Effects 0.000 title claims abstract description 84
- 230000000694 effects Effects 0.000 title claims abstract description 62
- 238000003860 storage Methods 0.000 title claims abstract description 37
- 239000007769 metal material Substances 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims description 13
- 239000000203 mixture Substances 0.000 claims abstract description 22
- 230000015654 memory Effects 0.000 claims abstract description 20
- 239000000126 substance Substances 0.000 claims abstract description 10
- 239000000843 powder Substances 0.000 claims description 24
- 239000003795 chemical substances by application Substances 0.000 claims description 19
- 238000000034 method Methods 0.000 claims description 16
- 239000010453 quartz Substances 0.000 claims description 16
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 16
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical group [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 claims description 9
- 239000002994 raw material Substances 0.000 claims description 9
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 7
- 238000000227 grinding Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- 238000005119 centrifugation Methods 0.000 claims description 3
- 239000004570 mortar (masonry) Substances 0.000 claims description 3
- 238000007789 sealing Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 238000011049 filling Methods 0.000 claims description 2
- 239000012856 weighed raw material Substances 0.000 claims description 2
- 238000005303 weighing Methods 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 32
- 238000001816 cooling Methods 0.000 abstract description 9
- 229910052732 germanium Inorganic materials 0.000 abstract description 5
- 229910052748 manganese Inorganic materials 0.000 abstract description 5
- 239000011572 manganese Substances 0.000 description 15
- 229910052793 cadmium Inorganic materials 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000002885 antiferromagnetic material Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 230000005381 magnetic domain Effects 0.000 description 2
- 239000000696 magnetic material Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 230000005355 Hall effect Effects 0.000 description 1
- 241000282414 Homo sapiens Species 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000002547 anomalous effect Effects 0.000 description 1
- 230000005290 antiferromagnetic effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003302 ferromagnetic material Substances 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052741 iridium Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C22/00—Alloys based on manganese
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22D—CASTING OF METALS; CASTING OF OTHER SUBSTANCES BY THE SAME PROCESSES OR DEVICES
- B22D13/00—Centrifugal casting; Casting by using centrifugal force
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P10/00—Technologies related to metal processing
- Y02P10/20—Recycling
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Abstract
The invention discloses a magnetic storage semi-metal material with exchange bias effect, which is characterized in that: the chemical formula of the magnetic storage semimetal material with the exchange bias effect is as follows: mn x Ge y Wherein x is more than 70 and less than 85, y is more than or equal to 17.5 and less than 27, x + y is 100, and x and y represent the atom percentage content. Characteristic value exchange bias field H of exchange bias effect of magnetic storage semi-metal material with exchange bias effect EB Can be changed by changing the Mn and Ge composition ratio or adjusted according to the application. The material can enable a magnetic hysteresis loop to gradually move towards a negative half axis of a magnetic field along with the increase of an externally applied cooling field, and shows stronger uniaxial magnetic anisotropy and magnetic field controllability. The magnetic storage semi-metal material Mn with the exchange bias effect x Ge y The magnetic sensor has wide application, such as a magnetic sensitive component, a magnetic memory, a micro magnetic control device system and the like.
Description
Technical Field
The invention relates to the field of magnetic storage, in particular to a magnetic storage semimetal material with exchange bias effect and a preparation method thereof.
Background
The magnet and the magnetism thereof are one of the earliest natural laws discovered and effectively utilized by human beings, but the magnet is discovered from the beginning, and people only stay in the process of exploring the basic properties thereof for a long time, and the application thereof is not really developed in a breakthrough manner except for some simple functions. Until the first time that denmark engineers Poulsen invented the magnetic recording medium in 1898 and applied for the first magnetic recording storage patent, magnetic material research and its application attracted extensive attention, and many enterprises, in addition to academic research, followed the direction of specializing in the application of magnetic materials, of which the most significant contribution was that the well-known IBM company first applied the magnetic medium to a magnetic tape drive in 1953, and the magnetic hard disk drive was first used in computing in 1956, when the capacity was only 5MB, and until 1998, the IBM company had made a worldwide hard disk drive for commercial computers with a capacity of up to 25 GB.
The anomalous hall effect in non-collinear antiferromagnets with sgminsterns can be made smaller than in conventional magnetic memories, which have a non-negligible effect on stabilizing the magnetic domain structure in miniature magnetic memory devices, with a spacing between sgminsterns of only a few nanometers, whereas the magnetic domain in conventional memories is at a minimum of 100 nanometers. In recent years, non-collinear chiral antiferromagnetic materials have expanded the research fields of antiferromagnetic spintronics and spin-charge coupling mechanisms, with Mn3X (X ═ Sn, Ga, Ge, Ir, Pt, etc.) series materials being the most prominent. The non-collinear antiferromagnetic material has the obvious advantages of resisting the interference of an external magnetic field, almost having no stray field, having higher packing density, having faster spin dynamics compared with the ferromagnetic material and being capable of improving the data writing speed by more than 3 orders of magnitude. Therefore, the information storage device based on the antiferromagnetic material has the advantages of high speed, safety, low energy consumption and the like, and is a storage device material with great potential.
Through comparison with the existing documents and experimental exploration, the Mn3Ge bulk or thin film material can be obtained by different methods (optical float zone method, vacuum arc melting, magnetron sputtering and the like), but the methods are complicated in general steps, the quality of the obtained material is low (the stoichiometric ratio of the material using the arc melting method is greatly influenced by melting conditions, the obtained material is uneven, the surface is not flat and the like), and the flexibility of adjusting the structure, the crystallinity and the like of the Mn3Ge material is poor, so that the method is not suitable for practical application. Therefore, the method can rapidly and stably prepare high-quality Mn3Ge bulk or thin-film materials, and can flexibly adjust the structure and the properties of the materials, thereby having high practical significance for future magnetic memory device gasification applications.
In the field of spintronics, which is currently rapidly developing, the pinning effect of the exchange bias effect plays an important role in the application of devices such as magnetic recording media, spin valves, novel magnetic memories, and magnetic control switches.
Disclosure of Invention
The present invention is made to solve the above problems, and an object of the present invention is to provide a magnetic memory semi-metal material having an exchange bias effect and a method for manufacturing the same.
The invention provides a magnetic storage semi-metal material with exchange bias effect, which is characterized in that: the chemical formula of the magnetic storage semimetal material with the exchange bias effect is as follows: mn x Ge y Wherein x is more than 70 and less than 85, y is more than or equal to 17.5 and less than 27, x + y is 100, and x and y represent the atom percentage content.
The invention provides a preparation method of a magnetic storage semi-metal material with exchange bias effect, which is characterized by comprising the following steps: step 1, weighing manganese powder and germanium powder as raw materials; 2, placing the weighed raw materials in a mortar, firstly, fully grinding for 0.5-1.5 h and uniformly mixing to obtain a first powder mixture, secondly, adding a fluxing agent into the first powder mixture and uniformly mixing to obtain a second powder mixture, and finally, filling the second powder mixture into an alumina crucible and sealing in a quartz tube under a vacuum environment; step 3, placing the quartz tube in a sintering furnace, firstly, raising the temperature of the quartz tube to 800-1200 ℃ at the speed of 1-2 ℃/min within 8-12 h, keeping the temperature for 32-40 h, secondly, slowly lowering the temperature of the quartz tube to 700-800 ℃ at the speed of 1-2 ℃/h, and finally, taking out the quartz tube by using crucible tongs at a high temperature state and then rapidly placing the quartz tube in a centrifuge with a preset program; and 4, increasing the rotating speed of the centrifugal machine to 1000-2000 rpm within 30s, then stably operating for 5-15 min, throwing out and separating the fluxing agent in a molten state through centrifugation, removing trace fluxing agent attached to the surface, and finally obtaining the magnetic storage semi-metal material with the exchange bias effect.
In the preparation method of the magnetic storage semimetal material with the exchange bias effect, the invention can also have the following characteristics: in the step 1, the mass ratio of the manganese powder to the germanium powder is x: y, x is more than 70 and less than 85, y is more than or equal to 17.5 and less than 27, and x + y is 100.
In the preparation method of the magnetic storage semimetal material with the exchange bias effect, the invention can also have the following characteristics: in step 2, the fluxing agent is cadmium powder, and the amount of the cadmium powder is 1.5 times of the weight of the first powder mixture.
In the preparation method of the magnetic storage semimetal material with the exchange bias effect, the invention can also have the following characteristics: in the step 2, the amount of the fluxing agent cadmium (Cd) powder is required to ensure that the raw materials can be completely melted in the first powder mixture, and the excessive addition of the fluxing agent cadmium (Cd) powder can not cause the raw materials in a molten state to be crystallized smoothly.
In the preparation method of the magnetic storage semimetal material with the exchange bias effect, the invention can also have the following characteristics: in the step 2, the manganese powder and the germanium powder are ground and mixed uniformly, and then the fluxing agent is added.
In the preparation method of the magnetic storage semimetal material with the exchange bias effect, the invention can also have the following characteristics: wherein, in the step 2, the alumina crucible is a high-temperature resistant alumina crucible.
In the preparation method of the magnetic storage semimetal material with the exchange bias effect, the invention can also have the following characteristics: in the step 4, the manner of removing the trace fluxing agent attached to the surface is manual stripping and/or grinding.
Action and Effect of the invention
Magnetic memory semimetal with exchange bias effect according to the inventionThe material, because, the chemical formula of the magnetic storage half-metal material is: mn x Ge y Wherein x is more than 70 and less than 85, y is more than or equal to 17.5 and less than 27, x + y is 100, and x and y represent the atom percentage content.
Therefore, the invention provides the characteristic value exchange bias field H of the exchange bias effect of the magnetic storage semi-metal material with the exchange bias effect EB Can be changed by changing the composition ratio of Mn and Ge or adjusted according to the application. The material can enable a magnetic hysteresis loop to gradually move towards a negative half axis of a magnetic field along with the increase of an externally applied cooling field, and shows stronger uniaxial magnetic anisotropy and magnetic field controllability. Therefore, the invention provides a magnetic storage semi-metal material Mn with exchange bias effect x Ge y The magnetic sensor has wide application, such as a magnetic sensitive component, a magnetic memory, a micro magnetic control device system and the like.
Drawings
FIG. 1 shows Mn in example 1 of the present invention 75 Ge 25 The exchange bias effect diagram of the material under different field cooling conditions;
FIG. 2 shows Mn in examples 1 to 5 of the present invention x Ge y And (3) an exchange bias effect diagram of the material under different element composition ratios.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the following embodiments are combined with the accompanying drawings to specifically describe the magnetic storage semimetal material with the exchange bias effect and the preparation method thereof.
Example 1
In this embodiment, there is provided a magnetic memory semi-metal material with exchange bias effect, and the chemical formula is: mn 75 Ge 25 。
The preparation method of the magnetic storage semimetal material with the exchange bias effect comprises the following steps:
in step S1, 1.154g of manganese powder having a purity of 99.99% and 0.436g of germanium powder were weighed, respectively.
And step S2, putting the weighed materials into a mortar, fully grinding the powder materials for 1 hour and the like, adding 2.385g of Cd powder which is about 1.5 times of the mixed materials, mixing the mixture uniformly again, putting the mixture into a high-temperature-resistant alumina crucible, and sealing the mixture in a quartz tube in a vacuum environment. In this example, the Mn and Ge powder raw materials were first ground and mixed uniformly, and then the flux was added.
The dosage of the fluxing agent cadmium (Cd) powder ensures that the raw materials can be completely melted in the first powder mixture, and the excessive addition of the fluxing agent cadmium (Cd) powder can not cause the raw materials in a molten state to be crystallized smoothly.
And step S3, placing the sealed quartz tube in a sintering furnace, raising the temperature to 1000 ℃ within 10h at the speed of 1.5 ℃/min, keeping the temperature for 36h, then slowly reducing the temperature to 750 ℃ at the speed of 1.5 ℃/h, then taking out the quartz tube from the furnace by using crucible tongs at a high temperature state, and then quickly placing the quartz tube in a centrifuge with a preset program.
And step S4, the rotating speed of the centrifuge is required to be increased to 1500 rpm within 30S, the centrifuge is stably operated for at least 10 minutes, the fluxing agent in a molten state is thrown out and separated by centrifugation, and finally the trace fluxing agent attached to the surface is removed by manual stripping, grinding and the like.
The obtained crystals were cut in the [001] direction and polished into small samples of 2X 1X 0.5mm, and the above-mentioned properties were measured to obtain various characteristic curves, and the corresponding values are shown in Table 1.
FIG. 1 shows Mn in example 1 of the present invention 75 Ge 25 And (3) an exchange bias effect diagram of the material under different field cooling conditions.
As shown in fig. 1, the hysteresis loops are significantly shifted from the center position under different field cooling conditions, the exchange bias effect is significantly exhibited, and the curve is shifted to the left in the positive cooling field and to the right in the negative cooling field.
Example 2
In this embodiment, there is provided a magnetic memory semi-metal material with exchange bias effect, and the chemical formula is: mn 75.75 Ge 24.25 。
The method of manufacturing a magnetic memory semi-metallic material with exchange bias effect according to this example is substantially the same as that of example 1, except that 1% of Mn powder (0.011g) is added, and the above properties are measured to obtain various characteristic curves, corresponding numerical values are shown in table 1.
Example 3
In this embodiment, there is provided a magnetic memory semi-metal material with exchange bias effect, and the chemical formula is: mn 77.25 Ge 22.75 。
The method of manufacturing a magnetic memory semi-metallic material with exchange bias effect according to this example is substantially the same as that of example 1, except that 3% Mn powder (0.034g) was added, and the above properties were measured to obtain various characteristic curves, and the corresponding values are shown in table 1.
Example 4
In this embodiment, there is provided a magnetic memory semi-metal material with exchange bias effect, and the chemical formula is: mn 78.75 Ge 21.25 。
The method for preparing a magnetic memory semi-metallic material with exchange bias effect according to this example is substantially the same as that of example 1, except that 5% of Mn powder (0.057g) is added, the above properties are measured, and various characteristic curves are obtained, and the corresponding values are shown in table 1.
Example 5
In this embodiment, there is provided a magnetic memory semi-metal material with exchange bias effect, and the chemical formula is: mn 80.25 Ge 17.5 。
The method for preparing a magnetic memory semi-metallic material with exchange bias effect according to this example was substantially the same as that of example 1, except that a 7% content of Mn powder (0.08g) was added, the above properties were measured, and various characteristic curves were obtained, corresponding values being shown in table 1.
Table 1 shows Mn of different components in examples 1 to 5 of the present invention x Ge y H of material under 50000Oe cooling field and 2K low temperature EB Numerical values.
TABLE 1
FIG. 2 shows Mn in examples 1 to 5 of the present invention x Ge y And (3) an exchange bias effect diagram of the material under different element composition ratios.
As shown in fig. 2, it can be seen that the significant change of the exchange bias effect under different element composition ratios is obvious, and it can be observed that along with the gradual increase of the content ratio of the Mn element, the intersection point position of the curve and the horizontal axis direction is gradually far away, and the value of the whole exchange bias field is also gradually increased, which has a higher research value for subsequent control of element content to further regulate and control the physical phenomena such as the internal exchange bias effect.
Effects and effects of the embodiments
According to the magnetic storage semi-metal material with the exchange bias effect related to the present embodiment, the chemical formula of the magnetic storage semi-metal material is: mn x Ge y Wherein x is more than 70 and less than 85, y is more than or equal to 17.5 and less than 27, x + y is 100, and x and y represent the atom percentage content.
Thus, the above embodiments provide a magnetic memory half-metal material with exchange bias effect whose characteristic value of the exchange bias effect exchanges bias field H EB Can be changed by changing the composition ratio of Mn and Ge or adjusted according to the application. The material can enable a magnetic hysteresis loop to gradually move towards a negative half axis of a magnetic field along with the increase of an externally applied cooling field, and shows stronger uniaxial magnetic anisotropy and magnetic field controllability. Therefore, the above embodiments provide a magnetic memory semi-metal material Mn with exchange bias effect x Ge y The magnetic sensor has wide application, such as a magnetic sensitive component, a magnetic memory, a micro magnetic control device system and the like.
The above embodiments are preferred examples of the present invention, and are not intended to limit the scope of the present invention.
Claims (8)
1. A magnetic memory semi-metallic material having an exchange bias effect, characterized by:
said has the cross connectionThe chemical formula of the magnetic storage semi-metal material of the exchange bias effect is as follows: mn x Ge y ，
Wherein x is more than 70 and less than 85, y is more than or equal to 17.5 and less than 27, x + y is 100,
x and y represent atom percent content.
2. A preparation method of a magnetic storage semi-metal material with exchange bias effect is characterized by comprising the following steps:
step 1, weighing manganese powder and germanium powder as raw materials;
2, placing the weighed raw materials in a mortar, firstly, fully grinding for 0.5-1.5 h and uniformly mixing to obtain a first powder mixture, secondly, adding a fluxing agent into the first powder mixture and uniformly mixing to obtain a second powder mixture, and finally, filling the second powder mixture into an alumina crucible and sealing in a quartz tube under a vacuum environment;
step 3, placing the quartz tube in a sintering furnace, firstly, raising the temperature of the quartz tube to 800-1200 ℃ at the speed of 1-2 ℃/min within 8-12 h, keeping the temperature for 32-40 h, secondly, slowly lowering the temperature of the quartz tube to 700-800 ℃ at the speed of 1-2 ℃/h, and finally, taking out the quartz tube by using crucible tongs at a high temperature state and then rapidly placing the quartz tube in a centrifuge with a preset program;
and 4, increasing the rotating speed of the centrifugal machine to 1000-2000 rpm within 30s, then stably operating for 5-15 min, throwing out and separating the fluxing agent in a molten state through centrifugation, removing trace fluxing agent attached to the surface, and finally obtaining the magnetic storage semi-metal material with the exchange bias effect.
3. The method for preparing a magnetic storage semi-metallic material with exchange bias effect as claimed in claim 2, wherein:
wherein in the step 1, the mass ratio of the manganese powder to the germanium powder is x: y,
70＜x＜85，17.5≤y＜27，x+y＝100。
4. the method for preparing a magnetic storage semi-metallic material with exchange bias effect as claimed in claim 2, wherein:
wherein, in the step 2, the fluxing agent is cadmium powder,
the cadmium powder was used in an amount of 1.5 times the weight of the first powder mixture.
5. The method for preparing a magnetic storage semi-metallic material with exchange bias effect as claimed in claim 2, wherein:
in step 2, the amount of the cadmium powder as the fluxing agent is not only required to ensure that the raw materials can be completely melted in the first powder mixture, but also not required to be excessively added, so that the molten raw materials cannot be smoothly crystallized.
6. The method for preparing a magnetic storage semi-metallic material with exchange bias effect as claimed in claim 2, wherein:
in the step 2, the manganese powder and the germanium powder are ground and mixed uniformly, and then the fluxing agent is added.
7. The method for preparing a magnetic storage semi-metallic material with exchange bias effect as claimed in claim 2, wherein:
in the step 2, the alumina crucible is a high-temperature-resistant alumina crucible.
8. The method for preparing a magnetic storage semi-metallic material with exchange bias effect as claimed in claim 2, wherein:
in the step 4, the manner of removing the trace fluxing agent attached to the surface is manual stripping and/or grinding.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732762A (en) * | 2012-07-20 | 2012-10-17 | 河北师范大学 | Magnetic shape memory alloy material with great exchange bias effect and preparation method thereof |
| CN108780779A (en) * | 2016-06-10 | 2018-11-09 | Tdk株式会社 | Exchange biased utilization type magnetization inversion element, exchange biased utilization type magneto-resistance effect element, exchange biased utilization type magnetic memory, non-volatile logic circuit and magnetic neuron element |
| JP2020152930A (en) * | 2019-03-18 | 2020-09-24 | 大電株式会社 | Magnetic refrigerant |
| CN112226659A (en) * | 2020-10-29 | 2021-01-15 | 上海电力大学 | Near-room-temperature magnetic refrigeration manganese-germanium-based refrigeration material and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102732762A (en) * | 2012-07-20 | 2012-10-17 | 河北师范大学 | Magnetic shape memory alloy material with great exchange bias effect and preparation method thereof |
| CN108780779A (en) * | 2016-06-10 | 2018-11-09 | Tdk株式会社 | Exchange biased utilization type magnetization inversion element, exchange biased utilization type magneto-resistance effect element, exchange biased utilization type magnetic memory, non-volatile logic circuit and magnetic neuron element |
| JP2020152930A (en) * | 2019-03-18 | 2020-09-24 | 大電株式会社 | Magnetic refrigerant |
| CN112226659A (en) * | 2020-10-29 | 2021-01-15 | 上海电力大学 | Near-room-temperature magnetic refrigeration manganese-germanium-based refrigeration material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| J F QIAN ET AL.: "Exchange bias up to room temperature in antiferromagnetic hexagonal Mn3Ge", vol. 47, no. 30, pages 305001 - 1, XP020267539, DOI: 10.1088/0022-3727/47/30/305001 * |
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