CN114867185A - Heat-dissipation carrier plate for high-frequency IC packaging and preparation process thereof - Google Patents
Heat-dissipation carrier plate for high-frequency IC packaging and preparation process thereof Download PDFInfo
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- CN114867185A CN114867185A CN202210248627.3A CN202210248627A CN114867185A CN 114867185 A CN114867185 A CN 114867185A CN 202210248627 A CN202210248627 A CN 202210248627A CN 114867185 A CN114867185 A CN 114867185A
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0204—Cooling of mounted components using means for thermal conduction connection in the thickness direction of the substrate
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0201—Thermal arrangements, e.g. for cooling, heating or preventing overheating
- H05K1/0203—Cooling of mounted components
- H05K1/0207—Cooling of mounted components using internal conductor planes parallel to the surface for thermal conduction, e.g. power planes
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0313—Organic insulating material
- H05K1/0353—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement
- H05K1/0373—Organic insulating material consisting of two or more materials, e.g. two or more polymers, polymer + filler, + reinforcement containing additives, e.g. fillers
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/18—Printed circuits structurally associated with non-printed electric components
- H05K1/182—Printed circuits structurally associated with non-printed electric components associated with components mounted in the printed circuit board, e.g. insert mounted components [IMC]
- H05K1/185—Components encapsulated in the insulating substrate of the printed circuit or incorporated in internal layers of a multilayer circuit
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Abstract
The invention discloses a radiating high-frequency IC packaging carrier plate which comprises a substrate, a circuit board and an insulating layer, wherein the substrate comprises a silicon nitride ceramic layer, a dielectric layer and a copper foil layer, the circuit board is fixedly arranged on the substrate through a welding pad, the welding pad penetrates through the copper foil layer and is embedded in the dielectric layer, a coating is filled between the circuit board and the substrate, the insulating layer is arranged on one side, away from the substrate, of the circuit board, and a patterned conducting layer is arranged on the insulating layer. The substrate is composed of the silicon nitride ceramic layer, the dielectric layer and the copper foil layer, the substrate and the circuit board are fixed by the welding pad, one end of the welding pad extends into the substrate to be in contact with the dielectric layer in the substrate, the welding pad is made of Ag-Cu-Ti series welding flux, the heat conduction effect is good, the dielectric layer is composed of modified polyimide resin, nano mixed materials and fillers, the heat conduction performance of the dielectric layer can be effectively improved under the condition that the signal transmission is not influenced by the dielectric layer, and therefore the heat dissipation efficiency of the substrate is improved.
Description
Technical Field
The invention relates to the technical field of packaging support plates, in particular to a heat-dissipation support plate for high-frequency IC packaging and a preparation process thereof.
Background
The chip package provides the proper signal path, thermal path and structural protection for the chip. Conventional wire bonding techniques typically employ a lead frame as a carrier for the chip. As the contact density of the chip is gradually increased, the lead frame cannot provide higher contact density, so that a package carrier with high contact density may be used instead, and the chip is packaged on the package carrier through a conductive medium such as a metal wire or a bump. Generally, a package carrier is fabricated by using a core dielectric layer as a core material, and stacking multiple patterned circuit layers and patterned dielectric layers on the core dielectric layer by full-additive method, half-additive method, subtractive method or other methods, so that the core dielectric layer occupies a relatively large proportion of the total thickness of the package carrier. If the thickness of the core dielectric layer cannot be effectively reduced, the thickness reduction of the package structure will be greatly hindered.
In the past, electronic components (e.g., IC chips, etc.) contained in circuit boards were generally formed directly on the surface of the circuit board. Under the trend of light, thin, short, high-frequency and multifunctional electronic products, the electronic elements are usually embedded in the circuit board in the preparation process of the current circuit board, and the heat generated by the electronic elements cannot be effectively conducted and dissipated, so that the service life of the circuit board is influenced.
Disclosure of Invention
The invention aims to provide a carrier plate for heat dissipation high-frequency IC packaging and a preparation process thereof, so as to solve the problems in the background technology.
In order to solve the technical problems, the invention provides the following technical scheme: the carrier plate comprises a substrate, a circuit board and an insulating layer, wherein the substrate comprises a silicon nitride ceramic layer, a dielectric layer and a copper foil layer, the circuit board is fixedly arranged on the substrate through a welding pad, the welding pad penetrates through the copper foil layer and is embedded into the dielectric layer, a coating is filled between the circuit board and the substrate, the insulating layer is arranged on one side, away from the substrate, of the circuit board, and a patterned conducting layer is arranged on the insulating layer.
In a preferred embodiment, the thickness of the substrate is 60-120mm, and the thickness ratio of the silicon nitride ceramic layer, the dielectric layer and the copper foil layer in the substrate is 1: (0.6-1): (0.4-0.8), the thickness of the circuit board is 30-70mm, and the thickness of the coating is 2-8 mm.
In a preferred embodiment, the dielectric layer comprises the following raw materials in parts by weight: 30-80 parts of modified polyimide resin, 6-12 parts of a nano mixed material, 3-8 parts of a filler and 40-80 parts of a dispersant, wherein the nano mixed material comprises nano aluminum nitride, magnesium oxide and aluminum oxide, the filler comprises talcum powder, silicon dioxide, boron nitride and aluminum hydroxide, and the dispersant is N, N-dimethylacetamide.
In a preferred embodiment, the grain size of the filler in the dielectric layer is 2-20um, an aluminum layer is sputtered on the dielectric layer, the thickness of the aluminum layer is 2-10um, and the pad is made of Ag-Cu-Ti series solder.
In a preferred embodiment, the coating comprises the following raw materials in parts by weight: 40-60 parts of phosphorus-containing epoxy resin, 20-30 parts of polyether ether ketone resin, 3-8 parts of graphene, 5-8 parts of inorganic filler and 10-18 parts of triglycidyl isocyanurate, wherein the inorganic filler comprises modified barium sulfate and boron nitride, and the mass ratio of the modified barium sulfate to the boron nitride is 1: 0.8-1.5.
A preparation process of a carrier plate for heat dissipation high-frequency IC packaging comprises the following steps:
the method comprises the following steps: weighing the modified polyimide resin, the nano mixed material, the filler and the dispersant in the dielectric layer, placing the materials in a mixer, and uniformly mixing and dispersing the materials under the ultrasonic assistance to obtain dielectric layer liquid for later use; adding the weighed phosphorus-containing epoxy resin, polyether-ether-ketone resin and triglycidyl isocyanurate in the coating into a reaction container, stirring and mixing uniformly, then extruding and granulating by using an extruder to obtain a coarse material, adding a solvent into the coarse material for dispersion, adding graphene and an inorganic filler into a dispersion liquid, and mixing uniformly to obtain a coating liquid for later use;
step two: cleaning and drying the selected silicon nitride ceramic layer, uniformly coating the dielectric layer liquid obtained in the step one on the surface of the silicon nitride ceramic layer after the treatment is finished, forming a dielectric layer on the surface of the silicon nitride ceramic layer after high-temperature cyclization, sputtering an aluminum layer on the surface of the dielectric layer by using a magnetron sputtering method, and welding a copper foil layer on the surface of the aluminum layer by using a high-temperature brazing technology to obtain a substrate;
step three: mounting holes are formed in the substrate 1 obtained in the step two, penetrate through the copper foil layer and the aluminum layer and are arranged inside the dielectric layer, welding pads are welded in the mounting holes, and the circuit board is welded on the welding pads after the welding pads are fixed;
step four: and (3) uniformly filling the coating liquid obtained in the step one between the copper foil layer and the circuit board, then carrying out edge sealing and drying to obtain a coating, and welding an insulating layer and a patterned conductive layer on the surface of the circuit board to obtain the carrier plate for packaging the heat-dissipation high-frequency IC.
In a preferred embodiment, the modified polyimide resin in the first step is graft-modified by a triamine monomer and a dianhydride monomer by using the polyimide resin, and the frequency of the ultrasonic-assisted dispersion in the first step is 80-160 Hz.
In a preferred embodiment, in the second step, the silicon nitride ceramic layer is cleaned and dried by an ultrasonic cleaning instrument with absolute ethyl alcohol for 8-12min, and then is washed with deionized water for 3-6min, wherein the temperature during drying is 40-60 ℃, and the aluminum layer is obtained by magnetron sputtering and then is subjected to electrochemical polishing treatment.
In a preferred embodiment, the bonding pad in step three extends into the dielectric layer to three quarters of the way.
In a preferred embodiment, the drying temperature of the coating after coating in the fourth step is 35-45 ℃, the patterned conductive layer penetrates through the insulating layer and is connected with the circuit board, and the patterned conductive layer is connected with the electrical element.
Compared with the prior art, the invention has the following beneficial effects:
1. the substrate used by the packaging carrier plate of the invention is composed of a silicon nitride ceramic layer, a dielectric layer and a copper foil layer, the substrate and the circuit board are fixed by using a welding pad, one end of the welding pad extends into the substrate and is contacted with the dielectric layer in the substrate, the welding pad adopts Ag-Cu-Ti series welding flux, the heat conduction effect is better, the dielectric layer is composed of modified polyimide resin, nano mixed material and filler, the heat conduction performance of the dielectric layer can be effectively improved under the condition that the signal transmission is not influenced by the dielectric layer, thereby improving the heat dissipation efficiency of the substrate, a metal aluminum layer is sputtered on the dielectric layer, the thermal stability of the substrate can be improved by connecting the dielectric layer and the copper foil layer through the metal aluminum layer, the thermal stress generated by the copper-clad substrate under the condition of cold-heat circulation can be released, the heat generated on the circuit board can be transmitted to the substrate through the welding pad, the heat dissipation effect of the substrate is better, the heat dissipation efficiency of the packaging carrier plate can be effectively improved, and the service life is prolonged;
2. according to the invention, the coating is filled between the substrate and the circuit board, the coating is composed of phosphorus-containing epoxy resin, polyether ether ketone resin, graphene, inorganic filler and triglycidyl isocyanurate, the phosphorus-containing epoxy resin and the polyether ether ketone resin are treated by the triglycidyl isocyanurate, then the graphene and the inorganic filler are added, the triglycidyl isocyanurate can enable the phosphorus-containing epoxy resin and the polyether ether ketone resin to be better in mixing effect, the triglycidyl isocyanurate has better heat resistance and weather resistance, the coating can have better heat resistance and weather resistance, and the service life of the packaging carrier plate is prolonged.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic overall cross-sectional configuration of the present invention;
FIG. 2 is a schematic view of the structure of the present invention for connecting the transition layer and the substrate
In the figure: 1 a substrate; 101 a silicon nitride ceramic layer; 102 a dielectric layer; 103 a copper foil layer; 104 an aluminum layer; 2, a circuit board; 3 an insulating layer; 4, a bonding pad; 5, coating; 6 patterning the conductive layer.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Example 1:
referring to fig. 1, the present invention provides a carrier board for heat dissipation high frequency IC package, including a substrate 1, a circuit board 2 and an insulating layer 3, wherein the substrate 1 includes a silicon nitride ceramic layer 101, a dielectric layer 102 and a copper foil layer 103, the substrate 1 is fixedly provided with the circuit board 2 through a bonding pad 4, the bonding pad 4 penetrates through the copper foil layer 103 and is embedded inside the dielectric layer 102, a coating 5 is filled between the circuit board 2 and the substrate 1, the insulating layer 3 is provided on one side of the circuit board 2 away from the substrate 1, and a patterned conductive layer 6 is configured on the insulating layer 3.
In a preferred embodiment, the thickness of the substrate 1 is 100mm, and the thickness ratio of the silicon nitride ceramic layer 101, the dielectric layer 102 and the copper foil layer 103 in the substrate 1 is 1: 0.8: 0.6, the thickness of the circuit board 2 is 50mm, and the thickness of the coating 5 is 6 mm.
In a preferred embodiment, the dielectric layer 102 comprises the following raw materials in parts by weight: the modified polyimide resin comprises 40 parts of modified polyimide resin, 7 parts of a nano mixed material, 5 parts of a filler and 50 parts of a dispersant, wherein the nano mixed material comprises nano aluminum nitride, magnesium oxide and aluminum oxide, the filler comprises talcum powder, silicon dioxide, boron nitride and aluminum hydroxide, and the dispersant is N, N-dimethylacetamide.
In a preferred embodiment, the grain size of the filler in the dielectric layer 102 is 2-20um, an aluminum layer 104 is sputtered on the dielectric layer 102, the thickness of the aluminum layer 104 is 5um, and the pad 4 is made of Ag-Cu-Ti solder.
In a preferred embodiment, the coating 5 comprises the following raw materials in parts by weight: the composite material comprises, by mass, 50 parts of phosphorus-containing epoxy resin, 25 parts of polyether ether ketone resin, 5 parts of graphene, 6 parts of an inorganic filler and 15 parts of triglycidyl isocyanurate, wherein the inorganic filler comprises modified barium sulfate and boron nitride, and the mass ratio of the modified barium sulfate to the boron nitride is 1: 1.2.
A preparation process of a carrier plate for heat dissipation high-frequency IC packaging comprises the following steps:
the method comprises the following steps: weighing the modified polyimide resin, the nano mixed material, the filler and the dispersant in the dielectric layer 102, placing the materials in a mixer, and uniformly mixing and dispersing the materials under the ultrasonic assistance to obtain dielectric layer liquid for later use; adding the weighed phosphorus-containing epoxy resin, polyether-ether-ketone resin and triglycidyl isocyanurate in the coating 5 into a reaction container, stirring and mixing uniformly, then extruding and granulating by using an extruder to obtain a coarse material, adding a solvent into the coarse material for dispersion, adding graphene and an inorganic filler into a dispersion liquid, and mixing uniformly to obtain a coating liquid for later use;
step two: cleaning and drying the selected silicon nitride ceramic layer 101, uniformly coating the dielectric layer liquid obtained in the step one on the surface of the silicon nitride ceramic layer 101 after the treatment is finished, forming a dielectric layer 102 on the surface of the silicon nitride ceramic layer 101 after high-temperature cyclization, sputtering an aluminum layer 104 on the surface of the dielectric layer 102 by using a magnetron sputtering method, and welding a copper foil layer on the surface of the aluminum layer 104 by using a high-temperature brazing technology to obtain a substrate 1;
step three: mounting holes are formed in the substrate 1 obtained in the second step, penetrate through the copper foil layer and the aluminum layer and are arranged inside the dielectric layer 102, welding pads 4 are welded in the mounting holes, and the circuit board 2 is welded on the welding pads 4 after the welding pads 4 are fixed;
step four: and (3) uniformly filling the coating liquid obtained in the step one between the copper foil layer 103 and the circuit board 2, then carrying out edge sealing and drying to obtain a coating 5, and welding the insulating layer 3 and the patterned conductive layer 6 on the surface of the circuit board 2 to obtain the carrier plate for packaging the heat-dissipation high-frequency IC.
In a preferred embodiment, the modified polyimide resin in the first step is graft-modified by using a polyimide resin and a triamine monomer and a dianhydride monomer, and the frequency of the ultrasonic-assisted dispersion in the first step is 120 Hz.
In a preferred embodiment, in the second step, the silicon nitride ceramic layer is cleaned and dried by an ultrasonic cleaning instrument for 10min by using absolute ethyl alcohol, and then is washed by deionized water for 5min at a drying temperature of 50 ℃, and the aluminum layer 104 is obtained by magnetron sputtering and then is subjected to electrochemical polishing treatment.
In a preferred embodiment, the bonding pad in step three extends into the dielectric layer to three quarters of the way.
In a preferred embodiment, the drying temperature after coating in the fourth step is 40 ℃, the patterned conductive layer 6 penetrates through the insulating layer 3 to be connected with the circuit board 2, and the patterned conductive layer 6 is connected with the electrical element.
Example 2:
different from embodiment 2, the carrier for heat dissipation high frequency IC package includes the following raw materials in parts by weight: 55 parts of modified polyimide resin, 9 parts of nano mixed material, 6 parts of filler and 60 parts of dispersant.
Example 3:
different from the embodiment 1-2, the carrier plate for the heat dissipation high-frequency IC packaging comprises the following raw materials in parts by weight: 70 parts of modified polyimide resin, 10 parts of nano mixed material, 7 parts of filler and 70 parts of dispersant.
Example 4:
referring to fig. 1, the present invention provides a carrier board for heat dissipation high frequency IC package, including a substrate 1, a circuit board 2 and an insulating layer 3, wherein the substrate 1 includes a silicon nitride ceramic layer 101, a dielectric layer 102 and a copper foil layer 103, the substrate 1 is fixedly provided with the circuit board 2 through a bonding pad 4, the bonding pad 4 penetrates through the copper foil layer 103 and is embedded inside the dielectric layer 102, a coating 5 is filled between the circuit board 2 and the substrate 1, the insulating layer 3 is provided on one side of the circuit board 2 away from the substrate 1, and a patterned conductive layer 6 is configured on the insulating layer 3.
In a preferred embodiment, the thickness of the substrate 1 is 100mm, and the thickness ratio of the silicon nitride ceramic layer 101, the dielectric layer 102 and the copper foil layer 103 in the substrate 1 is 1: 0.8: 0.6, the thickness of the circuit board 2 is 50mm, and the thickness of the coating 5 is 6 mm.
In a preferred embodiment, the dielectric layer 102 comprises the following raw materials in parts by weight: the modified polyimide resin comprises 40 parts of modified polyimide resin, 7 parts of a nano mixed material, 5 parts of a filler and 50 parts of a dispersant, wherein the nano mixed material comprises nano aluminum nitride, magnesium oxide and aluminum oxide, the filler comprises talcum powder, silicon dioxide, boron nitride and aluminum hydroxide, and the dispersant is N, N-dimethylacetamide.
In a preferred embodiment, the grain size of the filler in the dielectric layer 102 is 2-20um, an aluminum layer 104 is sputtered on the dielectric layer 102, the thickness of the aluminum layer 104 is 5um, and the pad 4 is made of Ag-Cu-Ti solder.
In a preferred embodiment, the coating 5 comprises the following raw materials in parts by weight: 60 parts of phosphorus-containing epoxy resin, 30 parts of polyether ether ketone resin, 5 parts of graphene, 7 parts of inorganic filler and 16 parts of triglycidyl isocyanurate, wherein the inorganic filler comprises modified barium sulfate and boron nitride, and the mass ratio of the modified barium sulfate to the boron nitride is 1: 1.2.
A preparation process of a carrier plate for heat dissipation high-frequency IC packaging comprises the following steps:
the method comprises the following steps: weighing the modified polyimide resin, the nano mixed material, the filler and the dispersant in the dielectric layer 102, placing the materials in a mixer, and uniformly mixing and dispersing the materials under the ultrasonic assistance to obtain dielectric layer liquid for later use; adding the weighed phosphorus-containing epoxy resin, polyether-ether-ketone resin and triglycidyl isocyanurate in the coating 5 into a reaction container, stirring and mixing uniformly, then extruding and granulating by using an extruder to obtain a coarse material, adding a solvent into the coarse material for dispersion, adding graphene and an inorganic filler into a dispersion liquid, and mixing uniformly to obtain a coating liquid for later use;
step two: cleaning and drying the selected silicon nitride ceramic layer 101, uniformly coating the dielectric layer liquid obtained in the step one on the surface of the silicon nitride ceramic layer 101 after the treatment is finished, forming a dielectric layer 102 on the surface of the silicon nitride ceramic layer 101 after high-temperature cyclization, sputtering an aluminum layer 104 on the surface of the dielectric layer 102 by using a magnetron sputtering method, and welding a copper foil layer on the surface of the aluminum layer 104 by using a high-temperature brazing technology to obtain a substrate 1;
step three: mounting holes are formed in the substrate 1 obtained in the second step, penetrate through the copper foil layer and the aluminum layer and are arranged inside the dielectric layer 102, welding pads 4 are welded in the mounting holes, and the circuit board 2 is welded on the welding pads 4 after the welding pads 4 are fixed;
step four: and (3) uniformly filling the coating liquid obtained in the step one between the copper foil layer 103 and the circuit board 2, then carrying out edge sealing and drying to obtain a coating 5, and welding the insulating layer 3 and the patterned conductive layer 6 on the surface of the circuit board 2 to obtain the carrier plate for packaging the heat-dissipation high-frequency IC.
In a preferred embodiment, the modified polyimide resin in the first step is graft-modified by using a polyimide resin and a triamine monomer and a dianhydride monomer, and the frequency of the ultrasonic-assisted dispersion in the first step is 120 Hz.
In a preferred embodiment, in the second step, the silicon nitride ceramic layer is cleaned and dried by an ultrasonic cleaning instrument for 10min by using absolute ethyl alcohol, and then is washed by deionized water for 5min at a drying temperature of 50 ℃, and the aluminum layer 104 is obtained by magnetron sputtering and then is subjected to electrochemical polishing treatment.
In a preferred embodiment, the bonding pad in step three extends into the dielectric layer to three quarters of the way.
In a preferred embodiment, the drying temperature after coating in the fourth step is 40 ℃, the patterned conductive layer 6 penetrates through the insulating layer 3 to be connected with the circuit board 2, and the patterned conductive layer 6 is connected with the electrical element.
The package substrates produced in embodiments 1, 2, 3 and 4 are respectively selected as an experimental group 1, an experimental group 2, an experimental group 3 and an experimental group 4, a conventional package substrate is selected as a control group, the thermal conductivity, the peel strength and the thermal release of each package substrate are respectively measured, the package substrates are placed in the same temperature environment during the thermal release test, the package substrates are taken out after the same time and placed at room temperature for the same time to measure the temperature of different package substrates, and the measurement results are shown in table one:
watch 1
It can be found through many experiments that the package carrier produced by the embodiment shown in table one has high thermal conductivity, good heat release effect and good peel strength, and the package carrier produced by the embodiment 2 has the best use effect, the substrate used by the package carrier of the invention is composed of a silicon nitride ceramic layer, a dielectric layer and a copper foil layer, the substrate and the circuit board are fixed by a welding pad, one end of the welding pad extends into the substrate and contacts with the dielectric layer in the substrate, the welding pad adopts Ag-Cu-Ti series solder with good heat conduction effect, the dielectric layer is composed of modified polyimide resin, nano mixed material and filler, the heat conduction performance of the dielectric layer can be effectively improved under the condition that the signal transmission is not influenced by the dielectric layer, thereby improving the heat dissipation efficiency of the substrate, the metal aluminum layer is sputtered on the dielectric layer, the thermal stability of the substrate can be improved by connecting the dielectric layer and the copper foil layer through the metal aluminum layer, the heat dissipation effect of the substrate is good, the heat dissipation efficiency of the packaging carrier plate can be effectively improved, and the service life is prolonged; the coating is filled between the substrate and the circuit board and comprises the phosphorus-containing epoxy resin, the polyether-ether-ketone resin, the graphene, the inorganic filler and the triglycidyl isocyanurate, the phosphorus-containing epoxy resin and the polyether-ether-ketone resin are treated by the triglycidyl isocyanurate, the graphene and the inorganic filler are added, the triglycidyl isocyanurate can enable the phosphorus-containing epoxy resin and the polyether-ether-ketone resin to be better in mixing effect, the triglycidyl isocyanurate has better heat resistance and weather resistance, the coating can have better heat resistance and weather resistance, and the service life of the packaging carrier plate is prolonged.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus.
Finally, it should be noted that: although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The utility model provides a heat dissipation high frequency IC encapsulates and uses support plate, includes base plate (1), circuit board (2) and insulating layer (3), its characterized in that: the substrate (1) comprises a silicon nitride ceramic layer (101), a dielectric layer (102) and a copper foil layer (103), a circuit board (2) is fixedly arranged on the substrate (1) through a welding pad (4), the welding pad (4) penetrates through the copper foil layer (103) and is embedded into the dielectric layer (102), a coating (5) is filled between the circuit board (2) and the substrate (1), an insulating layer (3) is arranged on one side, away from the substrate (1), of the circuit board (2), and a patterned conducting layer (6) is arranged on the insulating layer (3).
2. The carrier board for heat dissipation high frequency IC package according to claim 1, wherein: the thickness of the substrate (1) is 60-120mm, and the thickness ratio of the silicon nitride ceramic layer (101), the dielectric layer (102) and the copper foil layer (103) in the substrate (1) is 1: (0.6-1): (0.4-0.8), the thickness of the circuit board (2) is 30-70mm, and the thickness of the coating (5) is 2-8 mm.
3. The carrier board for heat dissipation high frequency IC package according to claim 2, wherein: the dielectric layer (102) comprises the following raw materials in parts by weight: 30-80 parts of modified polyimide resin, 6-12 parts of a nano mixed material, 3-8 parts of a filler and 40-80 parts of a dispersant, wherein the nano mixed material comprises nano aluminum nitride, magnesium oxide and aluminum oxide, the filler comprises talcum powder, silicon dioxide, boron nitride and aluminum hydroxide, and the dispersant is N, N-dimethylacetamide.
4. The carrier board for heat dissipation high frequency IC package according to claim 3, wherein: the grain diameter of filler is 2-20um in dielectric layer (102), it has aluminium layer (104) to sputter on dielectric layer (102), the thickness of aluminium layer (104) is 2-10um, bonding pad (4) are made for Ag-Cu-Ti series solder.
5. The carrier board for heat dissipation high frequency IC package according to claim 1, wherein: the coating (5) comprises the following raw materials in parts by weight: 40-60 parts of phosphorus-containing epoxy resin, 20-30 parts of polyether ether ketone resin, 3-8 parts of graphene, 5-8 parts of inorganic filler and 10-18 parts of triglycidyl isocyanurate, wherein the inorganic filler comprises modified barium sulfate and boron nitride, and the mass ratio of the modified barium sulfate to the boron nitride is 1: 0.8-1.5.
6. A preparation process of a carrier plate for heat dissipation high-frequency IC packaging is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: weighing the modified polyimide resin, the nano mixed material, the filler and the dispersant in the dielectric layer (102), placing the materials in a mixer, and uniformly mixing and dispersing the materials under the ultrasonic assistance to obtain dielectric layer liquid for later use; adding the weighed phosphorus-containing epoxy resin, polyether-ether-ketone resin and triglycidyl isocyanurate in the coating (5) into a reaction container, stirring and mixing uniformly, then extruding and granulating by using an extruder to obtain a coarse material, adding a solvent into the coarse material for dispersion, adding graphene and an inorganic filler into a dispersion liquid, and mixing uniformly to obtain a coating liquid for later use;
step two: cleaning and drying the selected silicon nitride ceramic layer (101), uniformly coating the dielectric layer liquid obtained in the step one on the surface of the silicon nitride ceramic layer (101) after the treatment is finished, forming a dielectric layer (102) on the surface of the silicon nitride ceramic layer (101) after high-temperature cyclization, sputtering an aluminum layer (104) on the surface of the dielectric layer (102) by using a magnetron sputtering method, and welding a copper foil layer on the surface of the aluminum layer (104) by using a high-temperature brazing technology to obtain a substrate (1);
step three: mounting holes are formed in the substrate (1) obtained in the second step, penetrate through the copper foil layer and the aluminum layer and are arranged inside the dielectric layer (102), welding pads (4) are welded in the mounting holes, and the circuit board (2) is welded on the welding pads (4) after the welding pads (4) are fixed;
step four: and (3) uniformly filling the coating liquid obtained in the step one between the copper foil layer (103) and the circuit board (2), then carrying out edge sealing and drying to obtain a coating (5), and welding the insulating layer (3) and the patterned conductive layer (6) on the surface of the circuit board (2) to obtain the carrier plate for packaging the heat-dissipation high-frequency IC.
7. The process for preparing the carrier plate for the heat dissipation high frequency IC package according to claim 6, wherein the process comprises the following steps: the modified polyimide resin in the first step is prepared by grafting and modifying polyimide resin through a triamine monomer and a dianhydride monomer, and the frequency of ultrasonic-assisted dispersion in the first step is 80-160 Hz.
8. The process for preparing the carrier plate for the heat dissipation high frequency IC package according to claim 6, wherein the process comprises the following steps: and in the second step, when the silicon nitride ceramic layer is cleaned and dried, firstly absolute ethyl alcohol is used for cleaning for 8-12min through an ultrasonic cleaning instrument, then deionized water is used for washing for 3-6min, the temperature during drying is 40-60 ℃, and the electrochemical polishing treatment is carried out after the aluminum layer (104) is obtained through magnetron sputtering.
9. The process for preparing the carrier plate for the heat dissipation high frequency IC package according to claim 6, wherein the process comprises the following steps: the bonding pad in the third step extends to three quarters of the dielectric layer.
10. The process for preparing the carrier plate for the heat dissipation high frequency IC package according to claim 6, wherein the process comprises the following steps: and in the fourth step, the drying temperature of the coating after coating is 35-45 ℃, the patterned conductive layer (6) penetrates through the insulating layer (3) and is connected with the circuit board (2), and the patterned conductive layer (6) is connected with an electrical element.
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