CN114830351A - 一种半导体结构及其制备方法 - Google Patents

一种半导体结构及其制备方法 Download PDF

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CN114830351A
CN114830351A CN201980102335.5A CN201980102335A CN114830351A CN 114830351 A CN114830351 A CN 114830351A CN 201980102335 A CN201980102335 A CN 201980102335A CN 114830351 A CN114830351 A CN 114830351A
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heterojunction
type semiconductor
layer
semiconductor structure
gate
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程凯
向鹏
朱昱
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Enkris Semiconductor Inc
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Enkris Semiconductor Inc
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Abstract

一种半导体结构及其制备方法，通过设置至少两个包括层叠设置的沟道层(11)和势垒层(12)的异质结(1)，其中所述异质结(1)的栅极区域包括至少一个第一p型半导体(2)，所述第一p型半导体(2)至少贯穿所述顶层势垒层(12)及部分所述沟道层(11)，利用多层沟道层(11)和势垒层(12)实现多层2DEG以提高2DEG的浓度，从而减小电阻，并且通过第一p型半导体(2)内的p型半导体材料来耗尽2DEG实现常关，以提高阈值电压。

Description

PCT国内申请，说明书已公开。

Claims (14)

  1. PCT国内申请，权利要求书已公开。
CN201980102335.5A 2019-12-31 2019-12-31 一种半导体结构及其制备方法 Pending CN114830351A (zh)

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CN118299402A (zh) * 2023-01-04 2024-07-05 中兴通讯股份有限公司 一种氮化镓器件及氮化镓器件的制作方法

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US5221849A (en) * 1992-06-16 1993-06-22 Motorola, Inc. Semiconductor device with active quantum well gate
US5608753A (en) * 1995-06-29 1997-03-04 Xerox Corporation Semiconductor devices incorporating p-type and n-type impurity induced layer disordered material
US6992319B2 (en) * 2000-07-18 2006-01-31 Epitaxial Technologies Ultra-linear multi-channel field effect transistor
US8008649B2 (en) * 2009-02-13 2011-08-30 Board Of Regents, The University Of Texas System Incorporating gate control over a resonant tunneling structure in CMOS to reduce off-state current leakage, supply voltage and power consumption
CN102130158B (zh) * 2011-01-05 2012-07-25 西安电子科技大学 阶梯型凹槽栅高电子迁移率晶体管
CN102683394B (zh) * 2012-04-17 2014-12-10 苏州晶湛半导体有限公司 一种增强型器件及其制造方法
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