CN114725767A - Electro-optical Q-switch based on relaxor ferroelectric single crystal - Google Patents
Electro-optical Q-switch based on relaxor ferroelectric single crystal Download PDFInfo
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- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/11—Mode locking; Q-switching; Other giant-pulse techniques, e.g. cavity dumping
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Abstract
An electro-optic Q-switch based on a relaxor ferroelectric single crystal belongs to the technical field of lasers. The invention aims at the problems of high cost and difficulty in miniaturization of the existing electro-optic Q-switch. The method comprises the following steps: YVO (YVO) after laser pulse generated by the fiber coupled semiconductor laser is transmitted by the back reflector4The crystal realizes wavelength conversion and gain amplification, and linearly polarized light is output through the polarization beam splitter; when the PIN-PMN-PT crystal has no external voltage, linearly polarized light passes through the quarter wave plate, the eighth wave plate and the PIN-PMN-PT crystal after phase delay, and cannot pass through the polarization beam splitter after being reflected by the output mirror and then reversely transmitted; the resonant cavity is in a low Q state; when voltage is applied to the PIN-PMN-PT crystal, linearly polarized light passes through the quarter wave plate, the eighth wave plate and the PIN-PMN-PT crystal, transmitted light is reflected by the output mirror and then reversely propagates to the rear reflecting mirror; the cavity is in a high Q state. The invention realizes low driving voltage and miniaturized Q switch.
Description
Technical Field
The invention relates to an electro-optic Q-switch based on a relaxor ferroelectric single crystal, and belongs to the technical field of lasers.
Background
The pulse laser has the advantage of high peak power and is widely applied to civil and military fields such as laser processing, distance measurement, communication, infrared countermeasure and the like.
The electro-optical Q-switch is a core device of a pulse laser, has the advantages of short switching time and high efficiency, and can be used for obtaining laser output with narrow pulse width and large energy. The electro-optic Q-switch has the working principle that the electro-optic effect of the crystal is utilized, 1/4 lambda wave voltage is applied to the crystal initially, the switch is in an off state, the laser resonant cavity is in a low Q state, and the energy storage stage is achieved. And after the energy storage is finished, the voltage is removed, so that the energy in the resonant cavity is quickly released, and the resonant cavity is in a high Q state and outputs the pulse laser with high peak power.
LiNbO3(LN) and KD2PO4The (DKDP) crystal is the two most used in the present electro-optical Q-switch. Wherein the optical damage threshold of the LN crystal is low, about 100MWcm-2Not suitable for high power lasers; the DKDP crystal has moisture absorption characteristics, requires a complex moisture-proof process, and increases the insertion loss of the device. At the same time, the effective electro-optic coefficient r of LN and DKDP crystalscAbout 21 and 24pmV, respectively-1High driving voltage or large size crystals are required to meet the use requirements. Therefore, the existing electro-optical Q-switch needs to be configured with a high-voltage power supply, has the disadvantages of high cost and difficulty in miniaturization, and becomes a key obstacle for improving the performance of equipment.
Disclosure of Invention
Aiming at the problems of high cost and difficulty in miniaturization of the conventional electro-optical Q-switch which needs to be provided with a high-voltage power supply and adopts a large-size crystal, the invention provides an electro-optical Q-switch based on a relaxor ferroelectric single crystal.
The invention relates to an electro-optic Q-switch based on a relaxor ferroelectric single crystal, which comprises an optical fiber coupling semiconductor laser, a rear reflector and Nd: YVO4A crystal, a polarization beam splitter, a quarter wave plate, an eighth wave plate, a PIN-PMN-PT crystal and an output mirror,
the fiber coupled semiconductor laser is used for generating laser pulse with expected central wavelength, and the laser output after the laser pulse is transmitted by the back reflector passes through Nd: YVO4The crystal realizes wavelength conversion and gain amplification, and outputs linearly polarized light through the polarization beam splitter;
when the PIN-PMN-PT crystal has no external voltage:
linearly polarized light enters the PIN-PMN-PT crystal after being subjected to phase delay through the quarter wave plate and the eighth wave plate, transmitted light after the phase delay of incident light is carried out by the PIN-PMN-PT crystal is reflected by the output mirror, and is subjected to phase delay through the PIN-PMN-PT crystal in the opposite direction, phase compensation is carried out on the phase delay of the PIN-PMN-PT crystal due to the birefringence effect through the eighth wave plate, the polarization direction of laser reaching the polarization beam splitter through the quarter wave plate is perpendicular to the polarization direction of incident laser of the polarization beam splitter, and the laser cannot pass through the polarization beam splitter; at this time, Nd is YVO4Continuously accumulating the working substances in the crystal, wherein the laser resonant cavity is in a low Q state at the current stage;
when the PIN-PMN-PT crystal is applied with voltage, the PIN-PMN-PT crystal is equivalent to a quarter wave plate:
linearly polarized light is subjected to phase delay through the quarter wave plate and the eighth wave plate, then enters the PIN-PMN-PT crystal for phase delay, transmitted light of the PIN-PMN-PT crystal is reflected by the output mirror, then reversely passes through the PIN-PMN-PT crystal, the eighth wave plate and the quarter wave plate, the polarization direction of laser reaching the polarization beam splitter through the quarter wave plate is the same as that of incident laser of the polarization beam splitter, and the laser reversely reaching the polarization beam splitter passes through the polarization beam splitter and then reaches the rear reflecting mirror through the Nd crystal YVO 4; in the current stage, the laser resonant cavity is in a high-Q state, and after strong laser oscillation is established in the laser resonant cavity, laser pulses are output through an output mirror.
According to the electro-optical Q-switched switch based on the relaxor ferroelectric single crystal, the central wavelength of a laser pulse generated by the optical fiber coupling semiconductor laser is 808nm, the repetition frequency is 10Hz to 2kHz, and the pulse duration is 100 mus.
According to the electro-optical Q-switch based on the relaxor ferroelectric single crystal, the diameter of the optical fiber coupling semiconductor laser is 200 mu m, and the numerical aperture is 0.22.
According to the electro-optical Q-switched switch based on the relaxor ferroelectric single crystal of the present invention, the Nd: YVO4 crystal includes 0.5 at.% doped Nd: YVO cut in the alpha direction with a size of 3mm x 5mm4A crystal; the light output and output surface of the Nd: YVO4 crystal during light forward transmission is a polished surface and is made of clothJustert angular orientation.
According to the electro-optical Q-switch based on the relaxor ferroelectric single crystal, the eighth wave plate is used for compensating optical phase retardation caused by birefringence when the PIN-PMN-PT crystal has no external voltage.
According to the electro-optical Q-switched switch based on the relaxor ferroelectric single crystal, the PIN-PMN-PT crystal passes light along the [100] crystal direction, and the two corresponding crystal faces are plated with anti-reflection films.
According to the electro-optical Q-switched switch based on the relaxor ferroelectric single crystal of the present invention, the antireflection film includes an inner layer film and an outer layer film, the inner layer film being HfO2The outer layer of the film is SiO2The film is coated by adopting an electron beam evaporation method of ion beam assisted deposition.
According to the electro-optical Q-switch based on the relaxor ferroelectric single crystal, the process of plating the anti-reflection film on the PIN-PMN-PT crystal comprises the following steps:
using 99.95% HfO2Target and 99.99% SiO2A target;
during film coating, the pressure in a vacuum state is lower than 3 multiplied by 10-3Pa, operating pressure maintained at 1X 10-2Pa, and oxygen was transported into the deposition chamber by a Coffeman ion source at a rate of 12 sccm.
According to the electro-optic Q-switch based on the relaxor ferroelectric single crystal of the present invention, the PIN-PMN-PT crystal is maintained at 30 ℃ during the process of plating the anti-reflection film.
The invention has the beneficial effects that: the invention provides an electro-optical Q-switch based on a relaxor ferroelectric single crystal PIN-PMN-PT, and proved by verification, compared with commercial DKDP and LN crystal Q-switches, the electro-optical Q-switch has the advantages that the volume of the switch is reduced by more than one order of magnitude, and meanwhile, the working voltage is reduced to 200V from 1300-3200V, so that the problem of electromagnetic interference of high-voltage pulse is solved. Meanwhile, the PIN-PMN-PT crystal has a high optical damage threshold of about 500MWcm-2And a moisture-proof process is not required, so that a low driving voltage and miniaturization of the Q-switch can be effectively achieved.
The invention is useful for the development of applications in many fields, such as subminiature, low power consumption laser radar, sensing function of small and small robots in automatic driving, and precision medical and scientific equipment requiring high stability.
Drawings
Fig. 1 is a schematic structural diagram of an electro-optical Q-switch based on a relaxor ferroelectric single crystal according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The invention is further described with reference to the following drawings and specific examples, which are not intended to be limiting.
In a first embodiment, with reference to fig. 1, the invention provides an electro-optical Q-switch based on a relaxor ferroelectric single crystal, which is characterized by comprising an optical fiber coupled semiconductor laser 1, a back mirror 2, and an Nd: YVO4 A crystal 3, a polarization beam splitter 4, a quarter wave plate 5, an eighth wave plate 6, a PIN-PMN-PT crystal 7 and an output mirror 8,
the fiber coupled semiconductor laser 1 is used for generating laser pulse with expected central wavelength, and the laser output after the laser pulse is transmitted by the back reflector 2 passes through Nd: YVO4The crystal 3 realizes wavelength conversion and gain amplification, and outputs linearly polarized light through the polarization beam splitter 4;
when the PIN-PMN-PT crystal 7 has no external voltage:
linearly polarized light enters a PIN-PMN-PT crystal 7 after being subjected to phase delay through a quarter-wave plate 5 and an eighth-wave plate 6, transmitted light after the phase delay of incident light is carried out by the PIN-PMN-PT crystal 7 is reflected by an output mirror 8, and is subjected to phase delay through the PIN-PMN-PT crystal 7 in the reverse direction, and then the phase delay caused by the birefringence effect of the PIN-PMN-PT crystal 7 is carried out by the eighth-wave plate 6The position compensation is carried out, the polarization direction of the laser reaching the polarization beam splitter 4 through the quarter-wave plate 5 is vertical to the polarization direction of the laser incident into the polarization beam splitter 4, and the laser cannot pass through the polarization beam splitter 4; at this time, Nd is YVO4The working substance in the crystal 3 is continuously accumulated, and the laser resonant cavity is in a low Q state at the current stage;
when the PIN-PMN-PT crystal 7 is applied with voltage, the PIN-PMN-PT crystal 7 is equivalent to a quarter wave plate:
linearly polarized light is subjected to phase delay through the quarter-wave plate 5 and the eighth-wave plate 6, then enters the PIN-PMN-PT crystal 7 for phase delay, transmitted light of the PIN-PMN-PT crystal 7 is reflected by the output mirror 8, then reversely passes through the PIN-PMN-PT crystal 7, the eighth-wave plate 6 and the quarter-wave plate 5, the polarization direction of laser reaching the polarization beam splitter 4 through the quarter-wave plate 5 is the same as that of incident laser of the polarization beam splitter 4, and the laser reversely reaching the polarization beam splitter 4 passes through the polarization beam splitter 4 and then reaches the rear reflector 2 through the Nd, namely YVO4 crystal 3; in the present stage, the laser resonant cavity is in a high-Q state, and after strong laser oscillation is established in the laser resonant cavity, laser pulses are output through the output mirror 8. The quarter-wave plate 5 is used to provide a phase retardation of pi/4.
In this embodiment, a laser resonator is formed between the rear mirror 2 and the output mirror 8.
By way of example, the fiber-coupled semiconductor laser 1 generates laser pulses with a center wavelength of 808nm, a repetition frequency of 10Hz to 2kHz, a pulse duration of 100 mus, and a pump pulse energy of up to 3.7 mJ.
The pump light with 808nm central wavelength can be absorbed by Nd: YVO4 crystal 3 and converted into output light with 1064nm, and in the process, the Nd: YVO4 crystal 3 is used as a gain medium in a laser resonant cavity. To avoid the effect of thermal deposition, the repetition frequency was set to 10Hz to 2kHz and the pulse duration was set to 100 mus.
The rear mirror 2 has a high reflectivity (> 99.5%) at 1064nm and a high transmission (> 99.6%) at 808nm, with the output mirror 8 having a reflectivity of 10% at a wavelength of 1064 nm.
In the present embodiment, by applying a voltage control signal, i.e., having a repetition frequency of 10Hz to 2kHz, to the PIN-PMN-PT crystal 7Pulse Vπ/2And voltage is applied to enable the Q switch to be in a working state. When no external voltage is applied to the crystal, the laser passes through the quarter-wave plate twice, the polarization direction reaching the polarizer is vertical to the incident polarization, and the phase delay caused by the birefringence of the crystal is compensated by the eighth-wave plate, so that the laser cannot pass through the polarizer. At the moment, the working substances in the Nd: YVO4 crystal are continuously accumulated, and the laser resonant cavity is in a low Q state at the current stage. When the working voltage acts on the PIN-PMN-PT crystal, the crystal is equivalent to a quarter-wave plate, after the laser is reflected by the reflector and passes through the crystal and the quarter-wave plate twice, the polarization state of the laser is unchanged, strong laser oscillation is established in the resonant cavity, the resonant cavity is in a high-Q state, and pulse laser with the wavelength of 1064nm is emitted at the output end of the resonant cavity.
As an example, the fiber diameter of the fiber-coupled semiconductor laser 1 is 200 μm, and the numerical aperture is 0.22. May be adapted to the cavity formed between the rear mirror 2 and the output mirror 8.
YVO4 crystal 3 includes 0.5 at.% Nd doped YVO cut in the alpha direction with dimensions of 3mm 5mm, as an example4A crystal; the light output surface of the YVO4 crystal 3 during light forward transmission is a polished surface and is oriented at the Brewster angle. The Nd: YVO4 crystal 3 is used as a gain medium of the oscillator and can prevent parasitic oscillation.
Further, the eighth wave plate 6 is used for compensating the optical phase retardation of the PIN-PMN-PT crystal 7 caused by birefringence when no external voltage is applied.
The PIN-PMN-PT crystal 7 belongs to a biaxial crystal in the orthogonal phase, which causes a phase delay due to a birefringence effect, as compared with uniaxial crystals LN and DKDP. Therefore, the eighth wave plate 6 is added in the resonant cavity, and the position of the eighth wave plate is adjusted, so that the phase delay of the PIN-PMN-PT crystal 7 caused by birefringence can be completely compensated, the oscillation is closed in a non-operation mode, the laser cavity is in a high-loss state, and the laser output power is zero. The use of the eighth wave plate 6 for phase compensation has the advantage of a simple construction and continuous adjustability.
Further, the PIN-PMN-PT crystal 7 is light-transmitted along the [100] crystal direction, and anti-reflection films are plated on two corresponding crystal faces.
In order to reduce the light intensity loss generated by the reflection of the crystal surface, anti-reflection films are plated on two light-passing surfaces of the PIN-PMN-PT crystal 7, so that the transmittance of the crystal under the wavelength of 1064nm reaches 99.6%.
As an example, the anti-reflection film comprises an inner layer film and an outer layer film, wherein the inner layer film is HfO2The outer layer of the film is SiO2The film is coated by adopting an electron beam evaporation method of ion beam assisted deposition.
Still further, the process of plating the anti-reflection film on the PIN-PMN-PT crystal 7 comprises the following steps:
using 99.95% HfO2Target and 99.99% SiO2A target;
during film coating, on HfO2Target and SiO2During the evaporation process of the target, the pressure in the vacuum state is lower than 3 x 10-3Pa, operating pressure maintained at 1X 10-2Pa, and oxygen was transported into the deposition chamber by a Coffeman ion source at a rate of 12 sccm.
In the whole deposition process, the temperature of the PIN-PMN-PT crystal 7 is 30 ℃ and is far lower than the phase change temperature of the PIN-PMN-PT crystal, so that the electric domain state in the crystal is not changed.
In the present embodiment, the PIN-PMN-PT crystal 7 was maintained at 30 ℃ during the process of plating the antireflection film.
In order to avoid phase change caused by the rise of the crystal temperature in the film plating process and change the state of the internal domain structure, the temperature of the PIN-PMN-PT crystal 7 is kept near the room temperature all the time during the film plating.
The specific embodiment is as follows:
a PIN-PMN-PT crystal of dimensions 5mm x 1.5mm was used to make a Q-switch and compared to commercial DKDP and LN crystal Q-switches: obtaining the size of a PIN-PMN-PT crystal Q switch
Comprises the following steps: 12mm × 3.4 mm; q-switch size compared to DKDP crystal
Q-switch size of 15mm x 18mm and LN
22mm x 22mm, a reduction of more than an order of magnitude.
The reason for the small size of the PIN-PMN-PT crystal Q switch is due to its large effective electro-optic coefficient rcIs 670pmV-1(ii) a Theoretically, decreasing the length of the Q-switch in the light-on direction leads to an increase in the operating voltage, according to the formula for the operating voltage of an electro-optical Q-switch:
in the formula Vπ/2Is a quarter-wave voltage, i.e. the operating voltage, λ is the wavelength, d is the distance between the two electrodes of the PIN-PMN-PT crystal, n is the refractive index, r iscIs the effective electro-optic coefficient, and l is the length of the PIN-PMN-PT crystal in the light-passing direction. Because the PIN-PMN-PT crystal has a large effective electro-optic coefficient, the working voltage is only 0.2kV, and the working voltage is reduced by 16 times and 6.5 times compared with DKDP and LN respectively.
The Q-switch made of the PIN-PMN-PT crystal was tested according to the structure shown in FIG. 1. Under the repetition frequency of 1kHz and the pumping energy of 3.7mJ, the pulse width output by the PIN-PMN-PT crystal is 1.8ns, and the performance of the PIN-PMN-PT crystal is obviously improved compared with that of a commercial Q switch. The PIN-PMN-PT crystal is capable of outputting smaller pulse widths because the pulse width is directly related to the time the laser light travels within the cavity, and the small size of the PIN-PMN-PT crystal reduces the extra optical path that the Q-switch insertion brings, i.e., the length of the electro-optic crystal in the direction of laser light propagation times the refractive index of the crystal. Therefore, the Q-switching time of the PIN-PMN-PT crystal in the cavity is shorter, which is beneficial to reducing the pulse width of the output laser.
Peak Power is another important performance parameter for Q-switches, and the maximum peak power output of a PIN-PMN-PT crystal Q-switch at a 1kHz repetition frequency with a pump energy of 3.7mJ is 154kW, which is almost the same as that of commercial DKDP and LN crystal Q-switches. This result further indicates that the PIN-PMN-PT crystal meets the standard for commercial Q-switches.
Although the invention herein has been described with reference to particular embodiments, it is to be understood that these embodiments are merely illustrative of the principles and applications of the present invention. It is therefore to be understood that numerous modifications may be made to the illustrative embodiments and that other arrangements may be devised without departing from the spirit and scope of the present invention as defined by the appended claims. It should be understood that features described in different dependent claims and herein may be combined in ways different from those described in the original claims. It is also to be understood that features described in connection with individual embodiments may be used in other described embodiments.
Claims (9)
1. An electro-optical Q-switch based on relaxor ferroelectric single crystal is characterized by comprising an optical fiber coupling semiconductor laser (1), a rear reflector (2), and an Nd-YVO (YVO)4A crystal (3), a polarization beam splitter (4), a quarter wave plate (5), an eighth wave plate (6), a PIN-PMN-PT crystal (7) and an output mirror (8),
the fiber coupled semiconductor laser (1) is used for generating laser pulses with expected central wavelength, and the laser output after the laser pulses are transmitted by the rear reflector (2) passes through Nd: YVO4The crystal (3) realizes wavelength conversion and gain amplification, and outputs linearly polarized light through the polarization beam splitter (4);
when the PIN-PMN-PT crystal (7) has no external voltage:
linearly polarized light enters a PIN-PMN-PT crystal (7) after being subjected to phase delay through a quarter wave plate (5) and an eighth wave plate (6), transmitted light after the phase delay of incident light is carried out by the PIN-PMN-PT crystal (7) is reflected by an output mirror (8), and is subjected to phase delay through the PIN-PMN-PT crystal (7) in the reverse direction, phase compensation is carried out on the phase delay of the PIN-PMN-PT crystal (7) due to the birefringence effect through the eighth wave plate (6), the polarization direction of laser reaching a polarization beam splitter (4) through the quarter wave plate (5) is vertical to the polarization direction of incident laser of the polarization beam splitter (4), and the laser cannot pass through the polarization beam splitter (4); at this time, Nd is YVO4The working substance in the crystal (3) is continuously accumulated, and the laser resonant cavity is in a low Q state at the current stage;
when the PIN-PMN-PT crystal (7) applies voltage, the PIN-PMN-PT crystal (7) is equivalent to a quarter wave plate:
linearly polarized light is subjected to phase delay through a quarter wave plate (5) and an eighth wave plate (6), then enters a PIN-PMN-PT crystal (7) for phase delay, transmitted light of the PIN-PMN-PT crystal (7) is reflected by an output mirror (8), then reversely passes through the PIN-PMN-PT crystal (7), the eighth wave plate (6) and the quarter wave plate (5), the polarization direction of laser reaching the polarization beam splitter (4) through the quarter wave plate (5) is the same as that of incident laser of the polarization beam splitter (4), and the laser reversely reaching the polarization beam splitter (4) passes through the polarization beam splitter (4) and then reaches a rear reflecting mirror (2) through a Nd: YVO4 crystal (3); the laser resonant cavity is in a high Q state at the present stage, and after strong laser oscillation is established in the laser resonant cavity, laser pulse is output through an output mirror (8).
2. The electro-optically Q-switched switch based on a relaxor ferroelectric single crystal as claimed in claim 1,
the central wavelength of laser pulse generated by the optical fiber coupling semiconductor laser (1) is 808nm, the repetition frequency is 10Hz to 2kHz, and the pulse duration is 100 mus.
3. The electro-optically Q-switched switch based on relaxor ferroelectric single crystal according to claim 2,
the diameter of the optical fiber coupling semiconductor laser (1) is 200 mu m, and the numerical aperture is 0.22.
4. The electro-optically Q-switched switch based on a relaxor ferroelectric single crystal as claimed in claim 3,
YVO4 crystal (3) comprising 0.5 at.% Nd doped YVO cut in the alpha direction with dimensions 3mm 5mm4A crystal; the light output and output surface of the crystal (3) of Nd: YVO4 in the forward transmission is a polished surface and is oriented at the Brewster angle.
5. The electro-optically Q-switched switch based on a relaxor ferroelectric single crystal as claimed in claim 4,
the eighth wave plate (6) is used for compensating optical phase delay caused by birefringence when the PIN-PMN-PT crystal (7) has no external voltage.
6. The electro-optically Q-switched switch based on relaxor ferroelectric single crystal according to claim 5,
the PIN-PMN-PT crystal (7) is transparent along the [100] crystal direction, and anti-reflection films are plated on two corresponding crystal faces.
7. The electro-optically Q-switched switch based on a relaxor ferroelectric single crystal as claimed in claim 6,
the anti-reflection film comprises an inner layer film and an outer layer film, wherein the inner layer film is HfO2The outer layer of the film is SiO2The film is coated by adopting an electron beam evaporation method of ion beam assisted deposition.
8. The electro-optically Q-switched switch based on a relaxor ferroelectric single crystal as claimed in claim 7,
the process for plating the anti-reflection film on the PIN-PMN-PT crystal (7) comprises the following steps:
using 99.95% HfO2Target and 99.99% SiO2A target;
during film coating, the pressure in a vacuum state is lower than 3 multiplied by 10-3Pa, operating pressure maintained at 1X 10-2Pa, and oxygen was transported into the deposition chamber by a Coffeman ion source at a rate of 12 sccm.
9. The electro-optically Q-switched switch based on a relaxor ferroelectric single crystal as claimed in claim 8,
during the process of plating the antireflection film, the PIN-PMN-PT crystal (7) was kept at 30 ℃.
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1039511A (en) * | 1988-07-01 | 1990-02-07 | 菲利浦光灯制造公司 | φ-the coating of DFB/DBR laser diode |
| CN105308496A (en) * | 2012-04-04 | 2016-02-03 | P·韩 | Electro-optical single crystal element, method for the preparation thereof, and systems employing the same |
| CN109462138A (en) * | 2018-12-03 | 2019-03-12 | 南京罗默激光科技有限公司 | A kind of Gao Zhongying short pulse infrared laser |
| CN114236884A (en) * | 2021-12-23 | 2022-03-25 | 中国电子科技集团公司第二十六研究所 | Lithium niobate-based high-speed high-threshold acousto-optic modulator |
-
2022
- 2022-04-11 CN CN202210373915.1A patent/CN114725767A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1039511A (en) * | 1988-07-01 | 1990-02-07 | 菲利浦光灯制造公司 | φ-the coating of DFB/DBR laser diode |
| CN105308496A (en) * | 2012-04-04 | 2016-02-03 | P·韩 | Electro-optical single crystal element, method for the preparation thereof, and systems employing the same |
| CN109462138A (en) * | 2018-12-03 | 2019-03-12 | 南京罗默激光科技有限公司 | A kind of Gao Zhongying short pulse infrared laser |
| CN114236884A (en) * | 2021-12-23 | 2022-03-25 | 中国电子科技集团公司第二十六研究所 | Lithium niobate-based high-speed high-threshold acousto-optic modulator |
Non-Patent Citations (1)
| Title |
|---|
| 戴达煌等编著, 北京:冶金工业出版社 * |
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