CN114709244A - Display back plate, manufacturing method thereof and display device - Google Patents
Display back plate, manufacturing method thereof and display device Download PDFInfo
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- CN114709244A CN114709244A CN202210306949.9A CN202210306949A CN114709244A CN 114709244 A CN114709244 A CN 114709244A CN 202210306949 A CN202210306949 A CN 202210306949A CN 114709244 A CN114709244 A CN 114709244A
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/122—Pixel-defining structures or layers, e.g. banks
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Abstract
The invention provides a display back plate, a manufacturing method thereof and a display device. In the display back plate, the light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer, at least part of the light-emitting structure is positioned in the opening of the pixel defining layer, and the first electrode layer is arranged close to the substrate; the isolation structure is positioned on one side of the pixel defining layer far away from the opening; a part of the second electrode layer extends from the opening of the pixel definition layer along the pixel definition layer to the side face, close to the pixel definition layer, of the isolation structure through a gap between the pixel definition layer and the isolation structure, and the second electrode layer is electrically connected to the isolation structure; the light emitting layer is not connected at a gap between the pixel defining layer and the isolation structure; the height of the isolation structure is greater than the height of the first electrode layer in a direction perpendicular to the substrate base plate. The thickness of the first electrode layer is thin, so that the problem that the metal film layer of the reflective first electrode layer bulges or falls off can be solved smoothly, and the display effect and the product yield of the product are improved remarkably.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display back plate, a manufacturing method thereof and a display device.
Background
The transparent display product is widely applied to vehicle-mounted display of automobiles/subways and the like and show window display of hotels/clothing shops and the like, and has the remarkable advantages of clear image quality, vivid display effect and the like. The cathode of a large-size transparent display product can be made very thin in order to improve the transparent effect, but the problem of large IR drop of the cathode is caused, and an effective solution is to effectively lap the cathode and a conductive structure on a back plate, so that the IR drop problem is greatly reduced. At present, an effective lapping mode is to prepare an I-shaped Rib structure on a back plate, so that an evaporated EL luminescent material can be smoothly cut off by a Tip angle protruding from the upper end, then a cathode can be deposited to be lapped with a conductive structure smoothly, and the problem of cathode IR drop can be smoothly solved due to the fact that the conductive structure has strong conductive capacity. However, the conventional display backplane structure still has many problems such as inter-layer bonding force and cutting of EL light-emitting materials.
Disclosure of Invention
The present invention is directed to solving, at least in part, one of the technical problems in the related art. Therefore, an object of the present invention is to provide a display backplane, which can solve the problem of a large voltage drop of the second electrode layer or improve the stability of the first electrode layer structure in the light emitting structure.
In one aspect of the invention, a display backplane is provided. According to an embodiment of the present invention, the display backplane comprises: the light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer which are arranged in a stacked mode, at least part of the light-emitting structure is located in an opening of the pixel defining layer, and the first electrode layer is arranged close to the substrate base plate; the isolation structure is positioned on one side of the pixel defining layer far away from the opening; a part of the second electrode layer extends from the opening of the pixel defining layer along the pixel defining layer, through a gap between the pixel defining layer and the isolation structure, and onto the side face of the isolation structure close to the pixel defining layer, and the second electrode layer is electrically connected to the isolation structure; the light emitting layer is not connected at a gap between the pixel defining layer and the isolation structure; in a direction perpendicular to the substrate base plate, the height of the isolation structure is larger than that of the first electrode layer. Therefore, the isolation structure is thick, the light-emitting layer can be effectively cut off, and the cathode is electrically connected with the isolation structure in a contact manner, so that the electrical connection between the cathode and the conductive structure is realized, and the IR drop of the second electrode layer is reduced; the thickness of the first electrode layer is small, the metal layer stress of the first electrode layer reflected by the display area is greatly reduced, the stress difference between the first electrode layer reflected by the display area and the organic flat layer below the first electrode layer is greatly reduced, the problem that the metal film layer of the first electrode layer is reflected bulges or falls off can be smoothly solved, and the display effect and the product yield of the product are remarkably improved.
According to an embodiment of the present invention, the first electrode layer includes a first transparent layer, a reflective electrode layer, and a second transparent layer which are stacked, the isolation structure includes a first layer, an intermediate layer, and a second layer which are stacked, and a thickness of the reflective electrode layer is smaller than a thickness of the intermediate layer.
According to the embodiment of the invention, the thickness of the reflecting electrode layer is 1/5-1/2 of the thickness of the intermediate layer.
According to an embodiment of the invention, the first transparent layer has a thickness which is the same as that of the first layer and is disposed in the same layer, and the second transparent layer has a thickness which is the same as that of the second layer and is disposed in the same layer.
According to an embodiment of the invention, the orthographic projection of the intermediate layer on the base substrate is located inside the orthographic projection of the first layer on the base substrate and inside the orthographic projection of the second layer on the base substrate.
According to the embodiment of the invention, the width of the recess on the side surface of the first electrode layer close to the isolation structure is smaller than the width of the recess between the second layer and the intermediate layer.
According to the embodiment of the invention, the display panel further comprises a conductive structure, the conductive structure is arranged on one side of the light-emitting structure close to the substrate base plate, and the conductive structure is electrically connected with the isolation structure.
According to an embodiment of the invention, the intermediate layer is trapezoidal in longitudinal section.
In another aspect of the present invention, the present invention provides a method for manufacturing the display backplane described above, and according to an embodiment of the present invention, the method for manufacturing the display backplane includes: forming a substrate base plate; forming an isolation structure, a pixel definition layer and a light emitting structure on one side of the substrate base plate, wherein the light emitting structure comprises a first electrode layer, a light emitting layer and a second electrode layer, at least part of the light emitting structure is positioned in an opening of the pixel definition layer, the first electrode layer is arranged close to the substrate base plate, the height of the isolation structure is larger than that of the first electrode layer in a direction perpendicular to the substrate base plate, and the method for forming the first electrode layer and the isolation structure comprises the following steps: forming a first transparent layer and a first layer arranged at intervals on one side of the substrate base plate; forming a first full-face conductive layer on the first transparent layer and the surface of the first layer far away from the substrate; etching the first whole conductive layer, and removing a first area of the first whole conductive layer, wherein the orthographic projection of the first area on the substrate base plate is that the orthographic projection of the first electrode layer on the substrate base plate is basically consistent; forming a second full-sided conductive layer on the unremoved surface of the first full-sided conductive layer and the exposed surface of the first transparent layer; forming a transparent layer on the surface of the second whole-face conducting layer far away from the substrate; and etching the transparent layer, the second whole-surface conducting layer and the remained first whole-surface conducting layer to obtain a second transparent layer and a reflecting electrode layer, and simultaneously obtaining an intermediate layer and a second layer of the isolation structure. Therefore, the isolation structure manufactured by the method is thick, the light-emitting layer can be effectively cut off, and the cathode is in contact electrical connection with the isolation structure, so that the electrical connection between the cathode and the conductive structure is realized, and the cathode IR drop is reduced; the thickness of the first electrode layer is thin, the metal layer stress of the first electrode layer reflected by the display area is greatly reduced, the stress difference between the first electrode layer reflected by the display area and the organic flat layer below the first electrode layer is greatly reduced, the problem that the metal film layer of the first electrode layer reflected bulges or falls off can be smoothly solved, and the display effect and the product yield of the product are remarkably improved.
In yet another aspect of the present invention, a display device is provided. According to an embodiment of the present invention, a display device includes the display backplane as described above. Therefore, the display device has better display effect and product yield. It will be understood by those skilled in the art that the display device has all the features and advantages of the display back plate described above, and will not be described herein in detail.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic structural diagram of a display backplane according to an embodiment of the present invention;
FIG. 2 is a scanning electron microscope image of the bulge generated in the reflective electrode layer in the prior art;
FIG. 3 is a flow chart of a structure for fabricating a display backplane according to another embodiment of the present invention;
FIG. 4 is a flow chart of a structure for fabricating a display backplane according to another embodiment of the present invention.
Detailed Description
The scheme of the invention will be explained with reference to the examples. It will be appreciated by those skilled in the art that the following examples are illustrative of the invention only and should not be taken as limiting the scope of the invention. The examples, where specific techniques or conditions are not indicated, are to be construed according to the techniques or conditions described in the literature in the art or according to the product specifications.
The invention will now be described with reference to specific examples, which are intended to be illustrative only and not to be limiting in any way.
In one aspect of the invention, a display backplane is provided. According to an embodiment of the present invention, referring to fig. 1, the display back plate includes: the light-emitting structure comprises a first electrode layer 21, a light-emitting layer 22 and a second electrode layer 23 which are arranged in a stacked mode, at least part of the light-emitting structure is located in an opening of the pixel defining layer 40, and the first electrode layer 21 is arranged close to the substrate; the isolation structure 30 is located on a side of the pixel defining layer 40 away from the opening; a portion of the second electrode layer 23 extends from the opening of the pixel defining layer along the pixel defining layer to the side of the isolation structure 30 close to the pixel defining layer 40 through the gap between the pixel defining layer 40 and the isolation structure 30, and the second electrode layer 23 is electrically connected to the isolation structure; the light emitting layer 22 is not connected at the gap between the pixel defining layer 40 and the isolation structure 30; the height of the isolation structure 30 is greater than the height of the first electrode layer 21 in a direction perpendicular to the base substrate. Therefore, the isolation structure is thick, the light-emitting layer can be effectively cut off, and the cathode is electrically connected with the isolation structure in a contact manner, so that the electrical connection between the second electrode layer and the conductive structure is realized, and the IR drop of the second electrode layer is reduced; the thickness of the first electrode layer is small, the metal layer stress of the first electrode layer reflected by the display area is greatly reduced, the stress difference between the first electrode layer reflected by the display area and the organic flat layer below the first electrode layer is greatly reduced, the problem that the metal film layer of the first electrode layer is reflected bulges or falls off can be smoothly solved, and the display effect and the product yield of the product are remarkably improved.
The first electrode layer may be an anode of the light emitting structure, and the second electrode layer may be a cathode of the light emitting structure.
According to the embodiment of the invention, the specific structure of the substrate base plate has no special requirement, and the skilled person can flexibly select the substrate base plate according to the actual situation. In some embodiments, referring to fig. 1, the substrate base plate comprises a base plate 12; a light-shielding layer 13, the light-shielding layer 13 being provided on the surface of the substrate 12, the light-shielding layer 13 being formed of a metal having conductivity; a buffer layer 14, the buffer layer 14 being provided on a surface of the substrate 12 and covering the light-shielding layer 13; an active layer 15, wherein the active layer 15 is arranged on the surface of the buffer layer 14 far away from the substrate 12; a gate insulating layer 16, the gate insulating layer 13 being disposed on a surface of the active layer 15 remote from the substrate 12; a gate electrode 17, the gate electrode 17 being disposed on a surface of the gate insulating layer 16 remote from the substrate 12; the interlayer dielectric layer 18, the interlayer dielectric layer 18 covers the surface of the exposed active layer, the surface of the exposed buffer layer and the surface of the grid; the source electrode 111 and the drain electrode 112 are arranged on the surface of the interlayer dielectric layer 18 far away from the substrate 12, wherein the source electrode 111 and the drain electrode 112 are respectively electrically connected with the active layer 15 through a through hole, the drain electrode 112 can also be electrically connected with the shading layer 13, the conductive structure 11 is arranged on the surface of the interlayer dielectric layer 18, and in the manufacturing process, the conductive structure can be prepared with the source electrode 111 and the drain electrode 112 through the same process; and a flat layer 19, wherein the flat layer 19 is arranged on the surface of the interlayer dielectric layer 18 and covers the source electrode 111 and the drain electrode 112. Referring to fig. 1, the light emitting structure is disposed on the surface of the planarization layer 19, wherein the first electrode layer 21 is electrically connected to the drain electrode 112 through a via hole penetrating the planarization layer 19, so as to implement driving of the light emitting structure by the thin film transistor. Referring to fig. 1, isolation structures 30 are electrically connected to conductive structures by vias that extend through planarization layer 19.
Wherein, the concrete material of each structure has no special requirement, and the technicians in the field can flexibly select according to the actual conditions. In some embodiments, the specific type of substrate may be a glass substrate, a polymer substrate, or a metal substrate; specific materials of the buffer layer, the gate insulating layer and the interlayer dielectric layer include, but are not limited to, at least one of silicon nitride, silicon oxide, silicon oxynitride and organic insulating materials; specific materials of the light-shielding layer, the source electrode, the drain electrode and the conductive structure include, but are not limited to, metal materials such as copper, aluminum, silver, molybdenum, neodymium, and alloys of the metal materials; specific materials of the active layer include, but are not limited to, materials such as polysilicon, amorphous silicon, IGZO, or IZTO; the planarization layer may include an inorganic planarization layer and an organic planarization layer, wherein the inorganic planarization layer is disposed on a side close to the substrate, the organic planarization layer is disposed on a side close to the first electrode layer, the inorganic planarization layer is made of at least one material selected from the group consisting of silicon nitride, silicon oxide, and silicon oxynitride, and the organic planarization layer is made of an organic insulating material. The pixel defining layer 40 defines a plurality of openings, and the effective light emitting region of the light emitting structure is located in the openings, wherein the pixel defining layer 40 covers the edge region of the first electrode layer, and the region of the opening exposing the first electrode layer is the effective light emitting region of the light emitting structure.
According to an embodiment of the present invention, referring to fig. 1, the first electrode layer 21 includes a first transparent layer 211, a reflective electrode layer 212, and a second transparent layer 213 which are stacked, the isolation structure 30 includes a first layer 31, an intermediate layer 32, and a second layer 33 which are stacked, and a thickness of the reflective electrode layer 212 is smaller than a thickness of the intermediate layer 32. Therefore, through thinning the thickness of the reflective electrode layer 212, the metal layer stress of the reflective electrode layer 212 in the display area can be effectively and greatly reduced, so that the stress difference between the reflective electrode layer 212 and the lower flat layer can be greatly reduced, the problem that the metal film layer of the reflective electrode layer 212 bulges or falls off can be smoothly solved, and the display effect and the product yield of the product are remarkably improved.
According to an embodiment of the present invention, the first transparent layer 211 has the same thickness and is disposed at the same layer as the first layer 31, and the second transparent layer 213 has the same thickness and is disposed at the same layer as the second layer 33. Thus, the first electrode layer and the isolation structure are fabricated in the same fabrication step, that is, the first transparent layer 211 and the first layer 31 are fabricated in the same deposition step, and therefore, have the same thickness, the reflective electrode layer 212 and the intermediate layer 32 are fabricated in the same deposition step, and therefore, have the same thickness, and the second transparent layer 213 and the second layer 33 are fabricated in the same deposition step, and therefore, have the same thickness. In order to realize the electrical connection between the cathode and the isolation structure, an effective lapping mode at present is to prepare an I-shaped isolation structure on the back plate, so that the first layer of the protruding structure can smoothly cut off the evaporated luminescent layer, then the cathode can be deposited to be electrically connected with the isolation structure, so as to realize the smooth lapping of the second electrode layer and the conductive structure, and the conductive structure has strong conductive capability, so that the problem of cathode IR drop can be smoothly solved. In order to achieve smooth cutting of the light emitting layer, the thickness of the isolation structure must be required to be sufficiently high, so that the intermediate layer serving as the isolation structure must be made sufficiently thick, which also causes the thickness of the reflective electrode layer in the first electrode layer to be relatively thick, but if the reflective electrode layer is too thick, the stress of the metal (i.e., the reflective electrode layer) becomes extremely large, the stress difference with the underlying flat layer is large (especially, when the flat layer includes an electrodeless flat layer and an organic flat layer, the stress difference between the reflective electrode layer and the organic flat layer is large), and the reflective electrode layer is likely to bulge or fall off (as shown in the scanning electron microscope image in fig. 2), thereby seriously affecting the display effect and the product yield. Therefore, in the invention, the thickness of the reflective electrode layer is reduced, and the middle layer in the isolation structure is kept in a thicker state, so that the technical effect of cutting off the luminescent layer can be effectively realized, and meanwhile, the stress of the reflective electrode layer is reduced, the stress difference between the reflective electrode layer and the flat layer is reduced, and the bulge or the falling of the reflective electrode layer is prevented, so that the display effect and the product yield of the display panel are improved.
According to the embodiment of the invention, the thickness of the reflecting electrode layer is 1/5-1/2 (such as 1/5, 1/4, 1/5 and 1/2) of the thickness of the intermediate layer. Therefore, the thickness of the reflecting electrode layer is small, the stress of the reflecting electrode layer can be effectively reduced, the stress difference between the reflecting electrode layer and the flat layer is reduced, and then the bulge or the falling of the reflecting electrode layer is prevented, so that the display effect and the product yield of the display panel are improved. In some embodiments of the invention, the reflective electrode layer has a thickness of 30nm to 150nm such as 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150 nm. In addition, the thickness of the intermediate layer in the isolation structure has no special requirement, and a person skilled in the art can flexibly select the thickness of the intermediate layer in the conventional technology according to the actual requirement.
According to an embodiment of the invention, with reference to fig. 1, the orthographic projection of the intermediate layer 32 on the base substrate is located inside the orthographic projection of the first layer 31 on the base substrate and inside the orthographic projection of the second layer 33 on said base substrate. That is, the area of the middle layer is smaller than that of the first layer and smaller than that of the second layer, so that the isolation structure is in an I-shaped structure, and the light-emitting layer can be well cut off. In some embodiments, referring to fig. 1, the orthographic projection of the second layer on the substrate base plate is located inside the orthographic projection of the first layer on the substrate base plate, and the area of the second layer is smaller than the area of the first layer, thus facilitating a stable connection of the second electrode layer 23 with the intermediate layer 32 so as to achieve an electrical connection of the second electrode layer 23 with the isolation structure 30.
According to an embodiment of the present invention, referring to fig. 1, the width d1 of the recess on the side of the first electrode layer 21 close to the isolation structure 30 is smaller than the width d2 of the recess between the second layer 33 and the intermediate layer 32. Thus, the isolation structures can be effectively blocked by the light emitting layer, so that the light emitting layer 22 is not connected at the gap between the pixel defining layer 40 and the isolation structure 30. The specific values of d1 and d2 are not particularly required, and those skilled in the art can flexibly select the values according to actual conditions as long as the functions of the separation column can be effectively embodied.
According to an embodiment of the present invention, referring to fig. 1, the display panel further includes a conductive structure 11, the conductive structure 11 is disposed on a side of the light emitting structure close to the substrate, and the conductive structure 11 is electrically connected to the isolation structure 30. Thereby, the electrically conductive structure 11 is electrically connected to the second electrode layer 23 through the isolation structure 30, thereby improving the voltage drop of the second electrode layer.
According to the embodiment of the present invention, the specific shape of the intermediate layer has no particularly suitable requirement, and those skilled in the art can flexibly select the shape according to the actual situation. In some embodiments, the middle layer may be cubic, with a rectangular longitudinal cross-section; in other embodiments, the intermediate layer has a trapezoidal longitudinal cross-section. Thus, the isolation structure has a quadrangular prism shape, in which the smaller-area top surface of the quadrangular prism shape is a surface away from the first layer (i.e., a regular trapezoidal structure, as shown in fig. 1), or the smaller-area top surface of the quadrangular prism shape is a surface close to the first layer (i.e., the isolation structure has an inverted trapezoidal structure). Thus, the light-emitting layer can be more effectively blocked by the quadrangular prism-shaped intermediate layer.
According to an embodiment of the present invention, the first transparent layer 211 and the first layer 31 may be made of ITO, the reflective electrode layer 212 and the intermediate layer 32 may be made of a metal material with a better reflective effect, such as silver or aluminum, the second transparent layer 213 and the second layer 33 may be made of ITO, and the second electrode layer 23 may be made of a conductive material, such as magnesium, aluminum, or IZO.
In another aspect of the present invention, the present invention provides a method for manufacturing the display backplane described above, and according to an embodiment of the present invention, the method for manufacturing the display backplane includes:
s100: a base substrate is formed.
In some embodiments, referring to fig. 1, the substrate base plate comprises a base plate 12; a light-shielding layer 13, the light-shielding layer 13 being provided on the surface of the substrate 12, the light-shielding layer 13 being formed of a metal having conductivity; a buffer layer 14, the buffer layer 14 being provided on a surface of the substrate 12 and covering the light-shielding layer 13; an active layer 15, wherein the active layer 15 is arranged on the surface of the buffer layer 14 far away from the substrate 12; a gate insulating layer 16, the gate insulating layer 13 being disposed on a surface of the active layer 15 remote from the substrate 12; a gate electrode 17, the gate electrode 17 being disposed on a surface of the gate insulating layer 16 remote from the substrate 12; an interlayer dielectric layer 18, wherein the interlayer dielectric layer 18 covers the surfaces of the exposed active layer, the exposed buffer layer and the grid electrode; and a source 111 and a drain 112, wherein the source 111 and the drain 112 are disposed on a surface of the interlayer dielectric layer 18 away from the substrate 12, the source 111 and the drain 112 are respectively electrically connected to the active layer 15 through a through hole, and the drain 112 is further electrically connected to the light shielding layer 13. In the step of manufacturing the substrate base plate, a step of forming a conductive structure is included, wherein the conductive structure 11 is disposed on the surface of the interlayer dielectric layer 18, and in the manufacturing process, the conductive structure and the source electrode 111 and the drain electrode 112 can be prepared through the same process; and a flat layer 19, wherein the flat layer 19 is arranged on the surface of the interlayer dielectric layer 18 and covers the source electrode 111 and the drain electrode 112.
S200: forming an isolation structure 30, a pixel definition layer 40 and a light-emitting structure on one side of the substrate, wherein the light-emitting structure comprises a first electrode layer 21, a light-emitting layer 22 and a second electrode layer 23, at least part of the light-emitting structure is located in an opening of the pixel definition layer 40, the isolation structure 30 is arranged on the first electrode layer 21 close to the substrate, and in a direction perpendicular to the substrate, the height of the isolation structure 30 is greater than that of the first electrode layer 21.
Referring to fig. 1, the light emitting structure is disposed on the surface of the planarization layer 19, wherein the first electrode layer 21 is electrically connected to the drain electrode 112 through a via hole penetrating the planarization layer 19, so as to implement driving of the light emitting structure by the thin film transistor. Referring to fig. 1, isolation structures 30 are electrically connected to conductive structures 11 by vias that extend through planarization layer 19. In some embodiments, the isolation structure 30 and the first electrode layer 21 are formed through the same process, and the isolation structure 30 is electrically connected to the first electrode layer 23 and the conductive structure 11, respectively, as can be seen in fig. 1.
According to the embodiment of the invention, the isolation structure manufactured by the method is thicker in thickness, so that the light-emitting layer can be effectively cut off, and the cathode and the isolation structure are in contact and electrical connection, so that the electrical connection between the cathode and the conductive structure is realized, and the cathode IR drop is reduced; the thickness of the first electrode layer is thin, the metal layer stress of the first electrode layer reflected by the display area is greatly reduced, the stress difference between the first electrode layer reflected by the display area and the organic flat layer below the first electrode layer is greatly reduced, the problem that the metal film layer of the first electrode layer reflected bulges or falls off can be smoothly solved, and the display effect and the product yield of the product are remarkably improved.
According to an embodiment of the present invention, referring to fig. 3 and 4, the method of forming the first electrode layer 21 and the isolation structure 30 includes:
s10: a first transparent layer 211 and a first layer 31 are formed on one side of the substrate at an interval, wherein the first layer 31 is electrically connected to the conductive structure 11, as shown in fig. 3 (a).
The first transparent layer 211 and the first layer 31 disposed at an interval may be: the method comprises the steps of forming a whole transparent conductive layer on one side of a substrate through physical vapor deposition, chemical vapor deposition or magnetron sputtering, and then manufacturing the first transparent layer 211 and the first layer 31 which are arranged at intervals through the process steps of coating photoresist, exposing, developing, etching and the like, namely, the first transparent layer 211 and the first layer 31 which are arranged at intervals are manufactured through the same step, and the thicknesses of the first transparent layer 211 and the first layer 31 are the same.
S20: forming a first entire-face conductive layer 321 on the first transparent layer 211 and the surface of the first layer 31 away from the substrate base, as in (b) of fig. 3;
s30: the first entire conductive layer 321 is etched, and a first region of the first entire conductive layer 321 is removed, where an orthographic projection of the first region on the substrate base plate is that an orthographic projection of the first electrode layer on the substrate base plate is substantially consistent, as shown in fig. 3 (c).
In the above step, the first region is a region corresponding to a region where a first electrode layer in the light emitting structure is to be formed. The method for removing the first region of the first entire conductive layer 321 may be a process step of coating photoresist, exposing, developing, etching, and the like.
S40: the second entire conductive layer 322 is formed on the surface of the first entire conductive layer 321 that is not removed and the exposed surface of the first transparent layer 211, as in (d) of fig. 4.
The specific method for forming the second entire surface conductive layer 322 is not particularly required, and those skilled in the art may flexibly select the method according to actual requirements, for example, the second entire surface conductive layer 322 may be formed by physical vapor deposition, chemical vapor deposition, magnetron sputtering, or other methods.
S50: a transparent layer 330 is formed on the surface of the second entire conductive layer 322 remote from the base substrate, as shown in fig. 4 (e).
The specific method for forming the transparent layer 330 is not particularly required, and those skilled in the art may flexibly select the method according to actual requirements, for example, the transparent layer 330 may be formed by physical vapor deposition, chemical vapor deposition, magnetron sputtering, or other methods.
S60: the transparent layer 330, the second entire conductive layer 322, and the remaining first entire conductive layer 321 are etched to obtain the second transparent layer 213 and the reflective electrode layer 212, and simultaneously obtain the intermediate layer 32 and the second layer 33 of the isolation structure 30, as shown in (f) of fig. 4.
According to the embodiment of the invention, in the step of S60, the transparent layer 330 and the second entire surface conductive layer 322 are etched by the same etching liquid, and the etching liquid has different etching rates for the transparent layer 330 and the second entire surface conductive layer 322, that is, the rate of the transparent layer 330 is faster and the rate of the transparent layer 330 is relatively slower. The obtained isolation structure is in an I-shaped structure, namely the orthographic projection of the intermediate layer on the substrate is positioned inside the orthographic projection of the first layer on the substrate and inside the orthographic projection of the second layer on the substrate, and the area of the intermediate layer is smaller than that of the first layer and smaller than that of the second layer. Therefore, the isolation structure can well cut off the light-emitting layer
According to the embodiment of the invention, the thickness of the reflecting electrode layer is 1/5-1/2 of the thickness of the intermediate layer. Therefore, the thickness of the reflecting electrode layer is small, the stress of the reflecting electrode layer can be effectively reduced, the stress difference between the reflecting electrode layer and the flat layer is reduced, and then the bulge or the falling of the reflecting electrode layer is prevented, so that the display effect and the product yield of the display panel are improved. In some embodiments of the invention, the reflective electrode layer has a thickness of 30nm to 150nm such as 30nm, 40nm, 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, 110nm, 120nm, 130nm, 140nm, 150 nm. In addition, the thickness of the intermediate layer in the isolation structure has no special requirement, and a person skilled in the art can flexibly select the thickness of the intermediate layer in the conventional technology according to the actual requirement.
In yet another aspect of the present invention, a display device is provided. According to an embodiment of the present invention, a display device includes the display backplane described above. Therefore, the display device has better display effect and product yield. It will be understood by those skilled in the art that the display device has all the features and advantages of the display back plate described above, and will not be described herein in detail.
According to the embodiment of the present invention, the specific type of the display device has no special requirement, and those skilled in the art can flexibly select the display device according to the actual situation. In some embodiments, specific categories of display devices include, but are not limited to, all display devices with display functions such as mobile phones, notebooks, kindle, iPad, televisions, game consoles, and the like.
It can be understood by those skilled in the art that the display device includes, in addition to the display panel, the necessary structures or components of a conventional display device, and in addition to the display panel, the display device also includes, for example, necessary structures or components of a glass cover plate, a battery rear cover, a middle frame, a main board, a touch module, an audio module, a camera module, and the like.
The terms "first" and "second" are used herein for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more of that feature. In the description of the present application, "a plurality" means two or more unless specifically limited otherwise.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above are not necessarily intended to refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Moreover, various embodiments or examples and features of various embodiments or examples described in this specification can be combined and combined by one skilled in the art without being mutually inconsistent.
Although embodiments of the present invention have been shown and described above, it is understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations can be made to the above embodiments by those of ordinary skill in the art within the scope of the present invention.
Claims (10)
1. A display backplane, comprising:
the light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer which are arranged in a stacked mode, at least part of the light-emitting structure is located in an opening of the pixel defining layer, and the first electrode layer is arranged close to the substrate base plate;
the isolation structure is positioned on one side of the pixel defining layer far away from the opening;
a part of the second electrode layer extends from the opening of the pixel defining layer along the pixel defining layer, through a gap between the pixel defining layer and the isolation structure, and onto the side face of the isolation structure close to the pixel defining layer, and the second electrode layer is electrically connected to the isolation structure;
the light emitting layer is not connected at a gap between the pixel defining layer and the isolation structure;
in a direction perpendicular to the substrate base plate, the height of the isolation structure is larger than that of the first electrode layer.
2. The display backplane of claim 1, wherein the first electrode layer comprises a first transparent layer, a reflective electrode layer, and a second transparent layer arranged in a stack, and wherein the spacer structure comprises a first layer, an intermediate layer, and a second layer arranged in a stack, and wherein the reflective electrode layer has a thickness less than a thickness of the intermediate layer.
3. The display backplane of claim 2, wherein the thickness of the reflective electrode layer is 1/5-1/2 of the thickness of the intermediate layer.
4. A display backplane according to claim 2, wherein the first transparent layer has the same thickness and is arranged in the same layer as the first layer and the second transparent layer has the same thickness and is arranged in the same layer as the second layer.
5. A display backplane according to any of claims 2-4, wherein an orthographic projection of the intermediate layer on the base substrate is located within an orthographic projection of the first layer on the base substrate and within an orthographic projection of the second layer on the base substrate.
6. A display backplane according to any of claims 2 to 4, wherein the width of the recess on the side of the first electrode layer adjacent to the isolation structure is smaller than the width of the recess between the second layer and the intermediate layer.
7. The display backplane according to any one of claims 2 to 4, further comprising a conductive structure disposed on a side of the light emitting structure adjacent to the substrate base plate, wherein the conductive structure is electrically connected to the isolation structure.
8. A display backplane according to any of claims 2-4, wherein the intermediate layer is trapezoidal in longitudinal cross-section in a direction perpendicular to the substrate base.
9. A method of making the display backplane of any one of claims 1-8, comprising:
forming a substrate base plate;
forming an isolation structure, a pixel definition layer and a light-emitting structure on one side of the substrate, wherein the light-emitting structure comprises a first electrode layer, a light-emitting layer and a second electrode layer, at least part of the light-emitting structure is positioned in an opening of the pixel definition layer, the first electrode layer is arranged close to the substrate,
wherein the height of the isolation structure is greater than the height of the first electrode layer in a direction perpendicular to the substrate base plate,
wherein the method of forming the first electrode layer and the isolation structure comprises:
forming a first transparent layer and a first layer arranged at intervals on one side of the substrate base plate;
forming a first full-face conductive layer on the first transparent layer and the surface of the first layer far away from the substrate;
etching the first whole conductive layer, and removing a first area of the first whole conductive layer, wherein the orthographic projection of the first area on the substrate base plate is that the orthographic projection of the first electrode layer on the substrate base plate is basically consistent;
forming a second full-sided conductive layer on the unremoved surface of the first full-sided conductive layer and the exposed surface of the first transparent layer;
forming a transparent layer on the surface of the second whole-face conducting layer far away from the substrate;
and etching the transparent layer, the second whole-surface conducting layer and the remained first whole-surface conducting layer to obtain a second transparent layer and a reflecting electrode layer, and simultaneously obtaining an intermediate layer and a second layer of the isolation structure.
10. A display device comprising the display back sheet according to any one of claims 1 to 8.
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| CN202210306949.9A CN114709244A (en) | 2022-03-25 | 2022-03-25 | Display back plate, manufacturing method thereof and display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115988905A (en) * | 2023-03-21 | 2023-04-18 | 惠科股份有限公司 | Pixel structure and display panel |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115988905A (en) * | 2023-03-21 | 2023-04-18 | 惠科股份有限公司 | Pixel structure and display panel |
| CN115988905B (en) * | 2023-03-21 | 2023-06-09 | 惠科股份有限公司 | Pixel structure and display panel |
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