CN114696759A - 具有与功率放大器管芯相邻的接地端的放大器模块和系统 - Google Patents

具有与功率放大器管芯相邻的接地端的放大器模块和系统 Download PDF

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Publication number
CN114696759A
CN114696759A CN202111311762.XA CN202111311762A CN114696759A CN 114696759 A CN114696759 A CN 114696759A CN 202111311762 A CN202111311762 A CN 202111311762A CN 114696759 A CN114696759 A CN 114696759A
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CN
China
Prior art keywords
ground
module
amplifier
ground terminal
signal
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Pending
Application number
CN202111311762.XA
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English (en)
Chinese (zh)
Inventor
杰弗里·凯文·琼斯
凯文·金
弗雷克·E·范斯坦腾
易卜拉欣·哈利勒
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NXP USA Inc
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NXP USA Inc
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Publication of CN114696759A publication Critical patent/CN114696759A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/62—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their interconnections
    • H10W70/65—Shapes or dispositions of interconnections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/22—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections
    • H10W40/226—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area
    • H10W40/228—Arrangements for cooling characterised by their shape, e.g. having conical or cylindrical projections characterised by projecting parts, e.g. fins to increase surface area the projecting parts being wire-shaped or pin-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H10W70/685—Shapes or dispositions thereof comprising multiple insulating layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/401—Package configurations characterised by multiple insulating or insulated package substrates, interposers or RDLs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/447—Indexing scheme relating to amplifiers the amplifier being protected to temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/258—Metallic materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Manufacturing & Machinery (AREA)
CN202111311762.XA 2020-12-29 2021-11-08 具有与功率放大器管芯相邻的接地端的放大器模块和系统 Pending CN114696759A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US17/136,304 US11842957B2 (en) 2020-12-29 2020-12-29 Amplifier modules and systems with ground terminals adjacent to power amplifier die
US17/136,304 2020-12-29

Publications (1)

Publication Number Publication Date
CN114696759A true CN114696759A (zh) 2022-07-01

Family

ID=78770370

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202111311762.XA Pending CN114696759A (zh) 2020-12-29 2021-11-08 具有与功率放大器管芯相邻的接地端的放大器模块和系统

Country Status (4)

Country Link
US (1) US11842957B2 (https=)
EP (1) EP4024447B1 (https=)
JP (1) JP2022104788A (https=)
CN (1) CN114696759A (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020126921A (ja) * 2019-02-04 2020-08-20 株式会社村田製作所 高周波モジュールおよび通信装置
JP7538097B2 (ja) * 2021-09-13 2024-08-21 株式会社東芝 半導体装置
US20240038645A1 (en) * 2022-07-26 2024-02-01 Avago Technologies International Sales Pte. Limited Semiconductor Package Interconnection Structure
US12347740B2 (en) * 2022-12-06 2025-07-01 Nxp Usa, Inc. Power amplifier module with transistor dies for multiple amplifier stages on a same heat dissipation structure
US20240203912A1 (en) * 2022-12-19 2024-06-20 Nxp Usa, Inc. Amplifier modules and systems with ground terminals adjacent to power amplifier die
US12588509B2 (en) * 2023-02-28 2026-03-24 Nxp Usa, Inc. Terminal interposers with mold flow channels, circuit modules including such terminal interposers, and associated methods

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077575A (ja) * 1998-08-28 2000-03-14 Ind Technol Res Inst 熱的及び電気的に増強された半導体パッケージ
US6875921B1 (en) * 2003-10-31 2005-04-05 Xilinx, Inc. Capacitive interposer
US20150303881A1 (en) * 2014-04-17 2015-10-22 Freescale Semiconductor, Inc. Radio frequency power amplifier module and a radio frequency power amplifier package
US20160150632A1 (en) * 2014-11-21 2016-05-26 Freescale Semiconductor, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US10141182B1 (en) * 2017-11-13 2018-11-27 Nxp Usa, Inc. Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7053469B2 (en) * 2004-03-30 2006-05-30 Advanced Semiconductor Engineering, Inc. Leadless semiconductor package and manufacturing method thereof
US7755186B2 (en) 2007-12-31 2010-07-13 Intel Corporation Cooling solutions for die-down integrated circuit packages
US9054040B2 (en) * 2013-02-27 2015-06-09 Infineon Technologies Austria Ag Multi-die package with separate inter-die interconnects
US9787254B2 (en) * 2015-09-23 2017-10-10 Nxp Usa, Inc. Encapsulated semiconductor device package with heatsink opening, and methods of manufacture thereof
US9899292B2 (en) 2016-02-05 2018-02-20 Qorvo Us, Inc. Top-side cooling of RF products in air cavity composite packages
US10284147B2 (en) 2016-12-15 2019-05-07 Nxp Usa, Inc. Doherty amplifiers and amplifier modules with shunt inductance circuits that affect transmission line length between carrier and peaking amplifier outputs
DE102017120753B4 (de) 2017-09-08 2021-04-29 Infineon Technologies Austria Ag SMD-Package mit Oberseitenkühlung
EP3480945A1 (en) * 2017-11-06 2019-05-08 NXP USA, Inc. Multiple-stage power amplifiers implemented with multiple semiconductor technologies
JP2021145290A (ja) * 2020-03-13 2021-09-24 株式会社村田製作所 高周波モジュールおよび通信装置
US11621228B2 (en) * 2020-08-31 2023-04-04 Nxp Usa, Inc. Substrate with thermal vias and sinter-bonded thermal dissipation structure

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000077575A (ja) * 1998-08-28 2000-03-14 Ind Technol Res Inst 熱的及び電気的に増強された半導体パッケージ
US6875921B1 (en) * 2003-10-31 2005-04-05 Xilinx, Inc. Capacitive interposer
US20150303881A1 (en) * 2014-04-17 2015-10-22 Freescale Semiconductor, Inc. Radio frequency power amplifier module and a radio frequency power amplifier package
US20160150632A1 (en) * 2014-11-21 2016-05-26 Freescale Semiconductor, Inc. Packaged electronic devices with top terminations, and methods of manufacture thereof
US10141182B1 (en) * 2017-11-13 2018-11-27 Nxp Usa, Inc. Microelectronic systems containing embedded heat dissipation structures and methods for the fabrication thereof

Also Published As

Publication number Publication date
JP2022104788A (ja) 2022-07-11
EP4024447B1 (en) 2025-10-29
EP4024447A1 (en) 2022-07-06
US11842957B2 (en) 2023-12-12
US20220208670A1 (en) 2022-06-30

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