CN114679142A - Direct current recovery module and photoelectric detection circuit - Google Patents
Direct current recovery module and photoelectric detection circuit Download PDFInfo
- Publication number
- CN114679142A CN114679142A CN202011552033.9A CN202011552033A CN114679142A CN 114679142 A CN114679142 A CN 114679142A CN 202011552033 A CN202011552033 A CN 202011552033A CN 114679142 A CN114679142 A CN 114679142A
- Authority
- CN
- China
- Prior art keywords
- amplifier
- nmos tube
- tube
- transimpedance amplifier
- direct current
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000001514 detection method Methods 0.000 title claims abstract description 38
- 238000011084 recovery Methods 0.000 title claims abstract description 28
- 230000003287 optical effect Effects 0.000 claims abstract description 26
- 230000003321 amplification Effects 0.000 claims description 32
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 32
- 239000003990 capacitor Substances 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims 2
- 150000004706 metal oxides Chemical class 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 238000012546 transfer Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- NAWXUBYGYWOOIX-SFHVURJKSA-N (2s)-2-[[4-[2-(2,4-diaminoquinazolin-6-yl)ethyl]benzoyl]amino]-4-methylidenepentanedioic acid Chemical compound C1=CC2=NC(N)=NC(N)=C2C=C1CCC1=CC=C(C(=O)N[C@@H](CC(=C)C(O)=O)C(O)=O)C=C1 NAWXUBYGYWOOIX-SFHVURJKSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/45—Differential amplifiers
- H03F3/45071—Differential amplifiers with semiconductor devices only
- H03F3/45076—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier
- H03F3/45179—Differential amplifiers with semiconductor devices only characterised by the way of implementation of the active amplifying circuit in the differential amplifier using MOSFET transistors as the active amplifying circuit
- H03F3/45273—Mirror types
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention provides a direct current recovery module and a photoelectric detection circuit, comprising: the transconductance operational amplifier receives an output signal of the transimpedance amplifier and amplifies and outputs a voltage difference between the output signal of the transimpedance amplifier and a reference signal; and the current mirror receives the output signal of the transconductance operational amplifier and outputs the output signal to the input end of the transimpedance amplifier in a mirror image mode with a set proportion, so that the influence of a direct current component in the output signal of the optical signal detection module on the transimpedance amplifier is eliminated. The direct current recovery module and the photoelectric detection circuit eliminate the interference influence of direct current components on the overall performance of the circuit through the direct current recovery module; meanwhile, the influence of the output leakage current of the current mirror on the low-frequency cut-off frequency is reduced by using the combination of the transconductance operational amplifier and the current mirror, and the frequency response change of the photoelectric detection circuit is further reduced.
Description
Technical Field
The present invention relates to the field of circuit design, and in particular, to a dc restoration module and a photoelectric detection circuit.
Background
The photoelectric detection technology is an emerging detection technology generated by combining optics and electronics. It mainly uses electronic technology to detect optical signal, and further transfers, stores, controls, calculates and displays. The photoelectric detection technology can detect all non-electric quantity which can affect the light quantity and the light characteristic in principle, the non-electric quantity information to be detected can be converted into optical information which is convenient to receive through an optical system, then the optical information quantity is converted into electric quantity through a photoelectric detection device, and the electric quantity is further amplified and processed through a circuit so as to achieve the purpose of outputting electric signals; then, the method of electronics, information theory, computer and physics is adopted to analyze the reason and rule of noise generation, so as to improve the corresponding circuit, and better study the characteristics and correlation of the weak useful signal submerged by noise, thereby knowing the state of non-electricity. The application of the photoelectric detection technology in the field of non-electric quantity detection is more and more extensive.
The photoelectric detector is a core part at the front end of the photoelectric detection technology, converts an optical signal into an electric signal, primarily amplifies the electric signal and outputs the electric signal to a post-stage circuit for signal processing, and the performance of the photoelectric detector directly influences the accuracy of a detection result. Therefore, how to improve the performance of the photodetector becomes one of the problems to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, an object of the present invention is to provide a dc recovery module and a photo-detection circuit, which are used to solve the problem of the prior art that the performance of the photo-detector is not superior enough.
To achieve the above and other related objects, the present invention provides a dc restoration module, which at least comprises:
the transconductance operational amplifier receives an output signal of the transimpedance amplifier and amplifies and outputs a voltage difference between the output signal of the transimpedance amplifier and a reference signal;
and the current mirror is used for receiving the output signal of the transconductance operational amplifier and outputting the output signal to the input end of the transimpedance amplifier in a set proportion mirror mode, so that the influence of a direct current component in the input signal of the transimpedance amplifier on the transimpedance amplifier is eliminated.
Optionally, the transconductance operational amplifier includes a first-stage amplification unit and a second-stage amplification unit;
the first-stage amplifying unit adopts a differential input single-ended output structure, differential input ends respectively receive the output signal of the transimpedance amplifier and the reference signal, and the difference value between the output signal of the transimpedance amplifier and the reference signal is amplified and output;
the second-stage amplification unit is connected with the output end of the first-stage amplification unit and is used for further amplifying and outputting the output signal of the first-stage amplification unit.
More optionally, the first-stage amplification unit includes a first NMOS transistor, a second NMOS transistor, a third NMOS transistor, a first PMOS transistor, and a second PMOS transistor;
the source electrodes of the first NMOS tube and the second NMOS tube are grounded through the third NMOS tube, and the grid electrode of the third NMOS tube is connected with a bias voltage; the grid electrodes of the first NMOS tube and the second NMOS tube are used as differential input ends of the first-stage amplification unit; the drain electrode of the first NMOS tube is connected with the drain electrode and the grid electrode of the first PMOS tube, and the source electrode of the first PMOS tube is connected with power supply voltage; and the source electrode of the second PMOS tube is connected with the power supply voltage, the grid electrode of the second PMOS tube is connected with the grid electrode of the first PMOS tube, and the drain electrode of the second PMOS tube is connected with the drain electrode of the second NMOS tube and serves as the output end of the first-stage amplification unit.
More optionally, the first-stage amplifying unit further includes a low-pass filter, and the low-pass filter is connected between the output end of the transimpedance amplifier and the input end of the transconductance operational amplifier.
More optionally, the second-stage amplifying unit includes a third PMOS transistor and a fourth NMOS transistor;
the source electrode of the third PMOS tube is connected with a power supply voltage, the grid electrode of the third PMOS tube is connected with the output end of the first-stage amplification unit, the drain electrode of the third PMOS tube is grounded through the fourth NMOS tube, and the grid electrode of the fourth NMOS tube is connected with a bias voltage; and the drain electrode of the third PMOS tube is used as the output end of the second-stage amplification unit.
More optionally, the transconductance operational amplifier further includes a frequency compensation unit, and the frequency compensation unit is connected between the gate and the drain of the third PMOS transistor; the frequency compensation unit comprises a first resistor and a first capacitor which are connected in series.
More optionally, the current mirror includes a fifth NMOS transistor and a sixth NMOS transistor; the drain electrode and the grid electrode of the fifth NMOS tube are connected with the output end of the transconductance operational amplifier, and the source electrode is grounded; the grid electrode of the sixth NMOS tube is connected with the grid electrode of the fifth NMOS tube, the source electrode of the sixth NMOS tube is grounded, and the drain electrode of the sixth NMOS tube is connected with the input end of the transimpedance amplifier.
More optionally, a size ratio of the fifth NMOS transistor to the sixth NMOS transistor is 1: n, N is a real number greater than 1.
More optionally, the low-frequency cut-off frequency of the dc restoration module satisfies the following relation:
wherein, BWLFIs the low frequency cut-off frequency, I, of the DC recovery moduleDn4Is a leakage current of the fourth NMOS, IDn6Is the leakage current of the sixth NMOS transistor.
To achieve the above and other related objects, the present invention also provides a photodetection circuit, comprising at least:
the optical signal detection module, the transimpedance amplifier and the direct current recovery module;
the optical signal detection module receives an optical signal and converts the optical signal into a current signal;
the trans-impedance amplifier is connected to the output end of the optical signal detection module, converts the current signal into a voltage signal, and amplifies and outputs the voltage signal; the trans-impedance amplifier comprises a core amplifier and a feedback resistor, wherein the feedback resistor is connected between the input end and the output end of the core amplifier and is used for feeding back the output voltage component of the core amplifier to the input end of the trans-impedance amplifier;
the input end of the direct current recovery module is connected with the output end of the transimpedance amplifier, the output end of the direct current recovery module is connected with the input end of the transimpedance amplifier, and the influence of the direct current recovery module on the transimpedance amplifier is eliminated by shunting the direct current component output by the optical signal detection module.
As described above, the dc restoration module and the photoelectric detection circuit according to the present invention have the following advantageous effects:
the direct current recovery module and the photoelectric detection circuit eliminate the interference influence of direct current components on the overall performance of the circuit through the direct current recovery module; meanwhile, the influence of the output leakage current of the current mirror on the low-frequency cut-off frequency is reduced by using the combination of the transconductance operational amplifier and the current mirror, and the frequency response change of the photoelectric detection circuit is further reduced.
Drawings
Fig. 1 is a schematic diagram of a dc restoration module in the form of an operational amplifier cascaded with a single NMOS driver.
Fig. 2 is a schematic structural diagram of a dc restoration module in the form of a transconductance amplifier cascaded proportional current mirror according to the present invention.
Fig. 3 is a schematic diagram of a transconductance operational amplifier according to the present invention.
Fig. 4 is a schematic structural diagram of the photodetection circuit according to the present invention.
Fig. 5 is a schematic diagram showing the quiescent point dc response of the output signal of the transconductance amplifier using the dc restoration module of the present invention.
Fig. 6 is a schematic diagram showing the frequency response of the output signal of the transconductance amplifier using the dc restoration module according to the present invention.
Description of the element reference numerals
1 trans-impedance amplifier
11 core amplifier
12 feedback resistance
2 DC recovery module
2a operational amplifier
2b NMOS drive tube
21 transconductance operational amplifier
211 first stage amplifying unit
211a low pass filter
212 second stage amplification unit
213 bias voltage generating unit
214 frequency compensation unit
22 current mirror
3 optical signal detection module
Detailed Description
The embodiments of the present invention are described below with reference to specific embodiments, and other advantages and effects of the present invention will be easily understood by those skilled in the art from the disclosure of the present specification. The invention is capable of other and different embodiments and of being practiced or of being carried out in various ways, and its several details are capable of modification in various respects, all without departing from the spirit and scope of the present invention.
Please refer to fig. 1 to 6. It should be noted that the drawings provided in this embodiment are only for schematically illustrating the basic idea of the present invention, and the components related to the present invention are only shown in the drawings and not drawn according to the number, shape and size of the components in actual implementation, and the form, quantity and proportion of each component in actual implementation may be arbitrarily changed, and the component layout may be more complicated.
The output signal of the photodetector includes two components, i.e., an ac current and a dc current, wherein the ac current component is converted and amplified into an ac voltage signal by a transimpedance amplifier (TIA) after flowing through a feedback resistor Rf. However, if the dc current component of the transimpedance amplifier also enters the feedback resistor Rf, a dc voltage drop will be generated on the feedback resistor Rf, and particularly, when the dc current component or the resistance value of the feedback resistor is large, the quiescent operating point of the output voltage of the transimpedance amplifier will be significantly changed, which causes a decrease in circuit performance, and may even cause the transimpedance amplifier to fail to operate normally. Therefore, an additional feedback circuit structure, namely a direct current recovery (DC restore) module is introduced, and the interference influence of a direct current component on the overall performance of the circuit is eliminated as much as possible.
Fig. 1 shows a dc restoration module 2 in the form of an Operational Amplifier (OPA) cascaded with a single NMOS driver. The inverting input end of the operational amplifier 2a is connected with the output end of the transimpedance amplifier 1, and the non-inverting input end of the operational amplifier is connected with a reference signal Vref; the grid electrode of the NMOS driving tube 2b is connected with the output end of the operational amplifier 2a, the source electrode is grounded, and the drain electrode is connected with the input end of the trans-impedance amplifier 1. The transimpedance gain in fig. 1 satisfies the following relationship:
wherein, VoutIs the output voltage of the transimpedance amplifier 1, IinIs the input current, R, of the transimpedance amplifier 1fIs the resistance of the feedback resistor, gm0Is transconductance of the NMOS drive tube 2b, A0(s) is the voltage transfer function of the operational amplifier 2 a.
When A is0(s) when approximated by a first order system,
wherein A is0Is the low frequency gain, p, of the operational amplifier 2a1Is the dominant pole of the operational amplifier 2 a.
Obtained by substituting formula (2) into formula (1):
formula 3) shows that the TIA transimpedance gain introduced into the dc restoration module has a high-pass filter characteristic, and can suppress low-frequency signals, and the low-frequency cutoff frequency of the TIA transimpedance gain satisfies:
wherein, munIs the channel surface mobility, C, of the NMOS drive transistor 2boxA gate oxide unit area capacitance, W, of the NMOS drive tube 2b0Is the channel width, L, of the NMOS drive transistor 2b0Is the channel length of the NMOS drive transistor 2b, ID0Is the leakage current of the NMOS drive tube 2 b.
The compound represented by formula (5) can be obtained by substituting formula (4):
however, this structure has a drawback when ID0BW varies by nearly a hundred times between orders of tens of microamperes to three milliamperes as the average output power of the photodetector variesLF1Will also follow ID0The change is nearly 10 times or so, which in turn affects the frequency response of the system.
In order to overcome the influence on the frequency response of the system, the present embodiment proposes a direct current recovery module 2 based on a transconductance amplifier (OTA) cascaded proportional current mirror form, where the direct current recovery module 2 includes:
a transconductance operational amplifier 21 and a current mirror 22.
As shown in fig. 2, the transconductance operational amplifier 21 receives the output signal of the transimpedance amplifier 1, and amplifies and outputs a voltage difference between the output signal Vout of the transimpedance amplifier 1 and the reference signal Vref.
Specifically, as shown in fig. 3, the transconductance operational amplifier 21 includes a first-stage amplification unit 211 and a second-stage amplification unit 212. The first-stage amplification unit 211 adopts a differential-input single-ended output structure, and differential input ends respectively receive the output signal Vout of the transimpedance amplifier 1 and the reference signal Vref, and amplify and output a difference value between the output signal Vout of the transimpedance amplifier 1 and the reference signal Vref. The second-stage amplifying unit 212 is connected to the output end of the first-stage amplifying unit 211, and further amplifies and outputs the output signal of the first-stage amplifying unit 211.
More specifically, as shown in fig. 3, the first stage amplification unit 211 includes a first NMOS transistor MN1, a second NMOS transistor MN2, a third NMOS transistor MN3, a first PMOS transistor MP1, and a second PMOS transistor MP 2. As an example, the first-stage amplifying unit 211 further includes a bias voltage generating unit 213, and the bias voltage generating unit 213 includes a current source I1 and a seventh NMOS transistor MN 7; one end of the current source I1 is connected with a power supply voltage VDD, and the other end of the current source I1 is connected with the drain and the gate of the seventh NMOS transistor MN7 and outputs a bias voltage; the source of the seventh NMOS transistor MN7 is grounded. The sources of the first NMOS transistor MN1 and the second NMOS transistor MN2 are grounded via the third NMOS transistor MN3, and the gate of the third NMOS transistor MN3 is connected to the bias voltage (the seventh NMOS transistor MN7 and the third NMOS transistor MN3 form a current mirror structure); the gates of the first NMOS transistor MN1 and the second NMOS transistor MN2 are used as differential input terminals of the first-stage amplification unit 211, and as an example, the gate of the first NMOS transistor MN1 is used as an inverting input terminal, and the gate of the second NMOS transistor MN2 is used as a non-inverting input terminal, and in actual use, corresponding polarities may be set as needed, which is not limited to this embodiment; the drain electrode of the first NMOS transistor MN1 is connected with the drain electrode and the grid electrode of the first PMOS transistor MP1, and the source electrode of the first PMOS transistor MP1 is connected with a power supply voltage VDD; the source of the second PMOS transistor MP2 is connected to the power supply voltage VDD, the gate is connected to the gate of the first PMOS transistor MP1, and the drain is connected to the drain of the second NMOS transistor MN2 and serves as the output terminal of the first-stage amplification unit 211.
As another implementation manner of the present invention, as shown in fig. 3, the first-stage amplifying unit 211 further includes a low-pass filter 211a, and the low-pass filter 211a is connected between the output terminal of the transimpedance amplifier 1 and the input terminal of the transimpedance operational amplifier 21. In this embodiment, the low-pass filter 211a performs low-pass filtering on the output signal of the transimpedance amplifier 1, and transmits the low-pass filtered signal to the inverting input terminal of the transimpedance operational amplifier 21.
More specifically, as shown in fig. 3, the second stage amplifying unit 212 includes a third PMOS transistor MP3 and a fourth NMOS transistor MN 4. A source of the third PMOS transistor MP3 is connected to a power supply voltage VDD, a gate thereof is connected to an output terminal of the first-stage amplification unit 211, a drain thereof is grounded via the fourth NMOS transistor MN4, and a gate of the fourth NMOS transistor MN4 is connected to the bias voltage (the seventh NMOS transistor MN7 and the fourth NMOS transistor MN4 form a current mirror structure); the drain of the third PMOS transistor MP3 is used as the output terminal of the second-stage amplifying unit 212.
As an implementation manner of the present invention, as shown in fig. 3, the transconductance operational amplifier 21 further includes a frequency compensation unit 214, and the frequency compensation unit 214 is connected between the gate and the drain of the third PMOS transistor MP 3. The frequency compensation unit 214 comprises a first resistor R1 and a first capacitor C1 connected in series; as an example, one end of the first resistor R1 is connected to the gate of the third PMOS transistor MP3, and the other end is connected to the drain of the third PMOS transistor MP3 via the first capacitor C1.
As shown in fig. 2, the current mirror 22 receives the output signal of the transconductance operational amplifier 21 and mirrors the output signal to the input end of the transimpedance amplifier 1 in a set proportion, so as to eliminate the influence of the dc component in the input signal (i.e., the current signal output by the optical signal detection module) of the transimpedance amplifier 1 on the transimpedance amplifier 1.
Specifically, as shown in fig. 3, the current mirror 22 includes a fifth NMOS transistor MN5 and a sixth NMOS transistor MN 6. The drain and the gate of the fifth NMOS transistor MN5 are connected to the output end of the transconductance operational amplifier 21, and the source is grounded; the gate of the sixth NMOS transistor MN6 is connected to the gate of the fifth NMOS transistor MN5, the source is grounded, and the drain is connected to the input terminal of the transimpedance amplifier 1.
As an implementation manner of the present invention, as shown in fig. 3, a size ratio of the fifth NMOS transistor MN5 to the sixth NMOS transistor MN6 (the fifth NMOS transistor MN5 and the sixth NMOS transistor MN6 are both single devices, and the size ratio is a ratio of width to length of two devices; or the fifth NMOS transistor MN5 and the sixth NMOS transistor MN6 have the same ratio of width to length, and the size ratio is a ratio of the number of parallel devices) is 1: n, N is a real number greater than 1.
In fig. 2, the span resistance gain satisfies the following relation:
wherein R isfFor feedback resistance, gmp3Is transconductance of the third PMOS transistor MP3, A1(s) is the overall transfer function of the voltage in the first stage amplification unit 211 from the inverting input terminal Vin-to the output terminal Vout 1.
When A is1(s) when approximated by a first order system,
wherein, A1Is A1Low frequency gain of(s), p1Is A1(s) a dominant pole.
The low-frequency cut-off frequency of the filter meets the following relational expression:
wherein, mupIs the channel surface mobility, C, of the third PMOS transistor MP3oxIs the unit area capacitance, W, of the gate oxide layer of the third PMOS tube MP3p3Is the channel width, L, of the third PMOS transistor MP3p3Is the channel length, I, of the third PMOS transistor MP3Dp3Is the leakage current of the third PMOS transistor MP3Dn4Is the leakage current, I, of the fourth NMOS transistor MN4Dn6Is the leakage current of the sixth NMOS transistor MN 6.
Formula (11) can be substituted for formula (10):
the invention drives the current I in a manner of a proportional current mirrorDn6For BWLF2The weight impact of (D) is greatly weakened, BWLF2Can be kept within a small range.
As shown in fig. 4, the present embodiment further provides a photodetection circuit, which at least includes:
the optical signal detection module 3, the transimpedance amplifier 1 and the direct current recovery module 2.
As shown in fig. 4, the optical signal detection module 3 receives an optical signal and converts the optical signal into a current signal.
As shown in fig. 4, the transimpedance amplifier 1 is connected to the output end of the optical signal detection module 3, and converts the current signal into a voltage signal, and amplifies and outputs the voltage signal.
Specifically, the transimpedance amplifier 1 includes a core amplifier 11 and a feedback resistor 12 (i.e., Rf), and the feedback resistor 12 is connected between an input end and an output end of the core amplifier 11, and is configured to feed back a voltage component output by the core amplifier 11 to the input end of the core amplifier 11.
As shown in fig. 4, an input end of the dc restoration module 2 is connected to an output end of the transimpedance amplifier 1, an output end of the dc restoration module 2 is connected to an input end of the transimpedance amplifier 1, and the influence of the dc component on the transimpedance amplifier 1 is eliminated by shunting the dc component output by the optical signal detection module 3.
Specifically, the specific connection relationship and principle of the transimpedance amplifier 1, the feedback resistor Rf and the dc restoring module 2 are shown in fig. 2 to 3 and the above, which are not repeated herein.
After the dc restoration module 2 in this embodiment shown in fig. 2 is adopted, the quiescent point of the output signal Vout of the transimpedance amplifier 1 is very stable, as shown in fig. 5; simultaneous low cut-off frequency BWLF2The variation range of (ii) can be limited within 2 times, the frequency response variation of the system is only 6KHz, and the transmission of the output high-frequency ac signal component of the photodetector is not affected, wherein each curve corresponds to the input current Iin of 0.003, 0.002, 0.001, 0.0005, 0.0001 (unit a) from bottom to top in sequence, as shown in fig. 6.
The direct current recovery module and the photoelectric detection circuit eliminate the interference influence of direct current components on the overall performance of the circuit through the direct current recovery module; meanwhile, the influence of the output leakage current of the current mirror on the low-frequency cut-off frequency is reduced by using the combination of the transconductance operational amplifier and the current mirror, and the frequency response change of the photoelectric detection circuit is further reduced.
In summary, the present invention provides a dc restoration module and a photo detection circuit, including: the transconductance operational amplifier receives an output signal of the transimpedance amplifier and amplifies and outputs a voltage difference between the output signal of the transimpedance amplifier and a reference signal; and the current mirror is used for receiving the output signal of the transconductance operational amplifier and outputting the output signal to the input end of the transimpedance amplifier in a set proportion mirror mode, so that the influence of a direct current component in the input signal of the transimpedance amplifier on the transimpedance amplifier is eliminated. The direct current recovery module and the photoelectric detection circuit eliminate the interference influence of direct current components on the overall performance of the circuit through the direct current recovery module; meanwhile, the influence of the output leakage current of the current mirror on the low-frequency cut-off frequency is reduced by using the combination of the transconductance operational amplifier and the current mirror, and the frequency response change of the photoelectric detection circuit is further reduced. Therefore, the invention effectively overcomes various defects in the prior art and has high industrial utilization value.
The foregoing embodiments are merely illustrative of the principles and utilities of the present invention and are not intended to limit the invention. Any person skilled in the art can modify or change the above-mentioned embodiments without departing from the spirit and scope of the present invention. Accordingly, it is intended that all equivalent modifications or changes which can be made by those skilled in the art without departing from the spirit and technical spirit of the present invention be covered by the claims of the present invention.
Claims (10)
1. A dc restoration module, comprising:
the transconductance operational amplifier receives an output signal of the transimpedance amplifier and amplifies and outputs a voltage difference between the output signal of the transimpedance amplifier and a reference signal;
and the current mirror is used for receiving the output signal of the transconductance operational amplifier and outputting the output signal to the input end of the transimpedance amplifier in a set proportion mirror mode, so that the influence of a direct current component in the input signal of the transimpedance amplifier on the transimpedance amplifier is eliminated.
2. The dc restoration module according to claim 1, wherein: the transconductance operational amplifier comprises a first-stage amplification unit and a second-stage amplification unit;
the first-stage amplification unit adopts a differential input single-ended output structure, and differential input ends respectively receive the output signal of the transimpedance amplifier and the reference signal and amplify and output the difference value between the output signal of the transimpedance amplifier and the reference signal;
the second-stage amplification unit is connected with the output end of the first-stage amplification unit and is used for further amplifying and outputting the output signal of the first-stage amplification unit.
3. The dc restoration module according to claim 2, wherein: the first-stage amplification unit comprises a first NMOS (N-channel metal oxide semiconductor) tube, a second NMOS tube, a third NMOS tube, a first PMOS (P-channel metal oxide semiconductor) tube and a second PMOS tube;
the source electrodes of the first NMOS tube and the second NMOS tube are grounded through the third NMOS tube, and the grid electrode of the third NMOS tube is connected with a bias voltage; the grid electrodes of the first NMOS tube and the second NMOS tube are used as differential input ends of the first-stage amplification unit; the drain electrode of the first NMOS tube is connected with the drain electrode and the grid electrode of the first PMOS tube, and the source electrode of the first PMOS tube is connected with power supply voltage; and the source electrode of the second PMOS tube is connected with the power supply voltage, the grid electrode of the second PMOS tube is connected with the grid electrode of the first PMOS tube, and the drain electrode of the second PMOS tube is connected with the drain electrode of the second NMOS tube and is used as the output end of the first-stage amplification unit.
4. The direct current recovery module according to claim 2 or 3, wherein: the first-stage amplification unit further comprises a low-pass filter, and the low-pass filter is connected between the output end of the transimpedance amplifier and the input end of the transconductance operational amplifier.
5. The dc restoration module according to claim 3, wherein: the second-stage amplification unit comprises a third PMOS tube and a fourth NMOS tube;
the source electrode of the third PMOS tube is connected with a power supply voltage, the grid electrode of the third PMOS tube is connected with the output end of the first-stage amplification unit, the drain electrode of the third PMOS tube is grounded through the fourth NMOS tube, and the grid electrode of the fourth NMOS tube is connected with a bias voltage; and the drain electrode of the third PMOS tube is used as the output end of the second-stage amplification unit.
6. The DC restoration module according to claim 5, wherein: the transconductance operational amplifier further comprises a frequency compensation unit, and the frequency compensation unit is connected between the grid electrode and the drain electrode of the third PMOS tube; the frequency compensation unit comprises a first resistor and a first capacitor which are connected in series.
7. The dc restoration module according to claim 6, wherein: the current mirror comprises a fifth NMOS tube and a sixth NMOS tube; the drain electrode and the grid electrode of the fifth NMOS tube are connected with the output end of the transconductance operational amplifier, and the source electrode is grounded; the grid electrode of the sixth NMOS tube is connected with the grid electrode of the fifth NMOS tube, the source electrode of the sixth NMOS tube is grounded, and the drain electrode of the sixth NMOS tube is connected with the input end of the transimpedance amplifier.
8. The dc restoration module according to claim 7, wherein: the size ratio of the fifth NMOS tube to the sixth NMOS tube is 1: n, N is a real number greater than 1.
9. The dc restoration module according to claim 8, wherein: the low-frequency cut-off frequency of the direct current recovery module satisfies the following relational expression:
wherein, BWLFIs the low frequency cut-off frequency, I, of the DC recovery moduleDn4Is a leakage current of the fourth NMOSDn6Is the leakage current of the sixth NMOS transistor.
10. A photodetection circuit, characterized in that the photodetection circuit comprises at least:
an optical signal detection module, a transimpedance amplifier and a direct current recovery module according to any one of claims 1 to 9;
the optical signal detection module receives an optical signal and converts the optical signal into a current signal;
the trans-impedance amplifier is connected to the output end of the optical signal detection module, converts the current signal into a voltage signal, and amplifies and outputs the voltage signal; the trans-impedance amplifier comprises a core amplifier and a feedback resistor, wherein the feedback resistor is connected between the input end and the output end of the core amplifier and is used for feeding back a voltage component output by the core amplifier to the input end of the core amplifier;
the input end of the direct current recovery module is connected with the output end of the transimpedance amplifier, the output end of the direct current recovery module is connected with the input end of the transimpedance amplifier, and the influence of the direct current component on the transimpedance amplifier is eliminated by shunting the direct current component output by the optical signal detection module.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011552033.9A CN114679142A (en) | 2020-12-24 | 2020-12-24 | Direct current recovery module and photoelectric detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011552033.9A CN114679142A (en) | 2020-12-24 | 2020-12-24 | Direct current recovery module and photoelectric detection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114679142A true CN114679142A (en) | 2022-06-28 |
Family
ID=82069620
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011552033.9A Pending CN114679142A (en) | 2020-12-24 | 2020-12-24 | Direct current recovery module and photoelectric detection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114679142A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115811283A (en) * | 2022-11-25 | 2023-03-17 | 厦门优迅高速芯片有限公司 | Anti-wifi signal interference circuit of trans-impedance amplifier |
| CN116260402A (en) * | 2023-02-16 | 2023-06-13 | 北京泽声科技有限公司 | Photoelectric detection circuit |
-
2020
- 2020-12-24 CN CN202011552033.9A patent/CN114679142A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115811283A (en) * | 2022-11-25 | 2023-03-17 | 厦门优迅高速芯片有限公司 | Anti-wifi signal interference circuit of trans-impedance amplifier |
| CN116260402A (en) * | 2023-02-16 | 2023-06-13 | 北京泽声科技有限公司 | Photoelectric detection circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106788280B (en) | Low-noise high-speed trans-impedance amplifier | |
| US5329115A (en) | Optical receiver circuit | |
| CN108362377B (en) | Low-frequency low-noise balanced homodyne detector | |
| CN105486912A (en) | High precision rapid over-current detection circuit for low dropout regulator | |
| US7449958B1 (en) | Open loop DC control for a transimpedance feedback amplifier | |
| CN114679142A (en) | Direct current recovery module and photoelectric detection circuit | |
| JPWO2010100741A1 (en) | Optical communication device | |
| CN107370461B (en) | Compensation structure applied to transimpedance amplifier | |
| CN104765399A (en) | CMOS low-temperature small-noise operation amplifying circuit | |
| CN111030610B (en) | Full-differential operational amplifier circuit for eliminating DC offset voltage | |
| TW201345143A (en) | High speed transimpedance amplifier | |
| CN101807891A (en) | Front-end amplifier circuit based on magnetoelectric transducer made of relaxor ferroelectric material | |
| JP5459424B2 (en) | Signal amplifier for optical receiver circuit | |
| US7265632B2 (en) | Amplifier circuit, and system incorporating same | |
| CN112083212B (en) | Current sensor and frequency compensation method thereof | |
| Ciccarella et al. | Integrated low-noise current amplifier for glass-based nanopore sensing | |
| CN213906635U (en) | Direct current recovery module and photoelectric detection circuit | |
| JP2007516636A (en) | Low power consumption voltage amplifier | |
| US6998913B2 (en) | Method and apparatus for linear low-frequency feedback in monolithic low-noise charge amplifiers | |
| CN102570989B (en) | Operational amplification circuit | |
| JP4325634B2 (en) | Sensing circuit | |
| CN111510090B (en) | Operational amplifier with high voltage slew rate and wide output range | |
| CN108508950B (en) | Circuit for improving output direct current level of transimpedance amplifier stage in TIA | |
| CN216252676U (en) | Amplifying circuit | |
| US7518447B1 (en) | Transimpedance amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20240113 Address after: Unit G3-302-036, Artificial Intelligence Industrial Park, No. 88 Jinjihu Avenue, Suzhou Industrial Park, Suzhou Area, China (Jiangsu) Pilot Free Trade Zone, Suzhou City, Jiangsu Province, 215124 Applicant after: Gongyantuoxin (Suzhou) Integrated Circuit Co.,Ltd. Address before: 201800 Building 1, No. 235, Chengbei Road, Jiading District, Shanghai Applicant before: Shanghai Industrial UTechnology Research Institute |