CN114641929A - 具有有源信号相位生成的移相器 - Google Patents

具有有源信号相位生成的移相器 Download PDF

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Publication number
CN114641929A
CN114641929A CN202080076445.1A CN202080076445A CN114641929A CN 114641929 A CN114641929 A CN 114641929A CN 202080076445 A CN202080076445 A CN 202080076445A CN 114641929 A CN114641929 A CN 114641929A
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CN
China
Prior art keywords
signal
phase
coupled
port
transistor
Prior art date
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Pending
Application number
CN202080076445.1A
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English (en)
Chinese (zh)
Inventor
C·D·帕特尔
俞欣旻
梁赖简
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Qualcomm Inc
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Qualcomm Inc
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Filing date
Publication date
Application filed by Qualcomm Inc filed Critical Qualcomm Inc
Publication of CN114641929A publication Critical patent/CN114641929A/zh
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/16—Networks for phase shifting
    • H03H11/20—Two-port phase shifters providing an adjustable phase shift
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/18—Phase-shifters
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/08—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements
    • H03F1/22—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively
    • H03F1/223—Modifications of amplifiers to reduce detrimental influences of internal impedances of amplifying elements by use of cascode coupling, i.e. earthed cathode or emitter stage followed by earthed grid or base stage respectively with MOSFET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/211—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only using a combination of several amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/605—Distributed amplifiers
    • H03F3/607—Distributed amplifiers using FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H11/00—Networks using active elements
    • H03H11/02—Multiple-port networks
    • H03H11/16—Networks for phase shifting
    • H03H11/22—Networks for phase shifting providing two or more phase shifted output signals, e.g. n-phase output
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40—Circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/294—Indexing scheme relating to amplifiers the amplifier being a low noise amplifier [LNA]
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B7/00—Radio transmission systems, i.e. using radiation field
    • H04B7/02—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas
    • H04B7/04—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas
    • H04B7/06—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station
    • H04B7/0613—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using simultaneous transmission
    • H04B7/0615—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using simultaneous transmission of weighted versions of same signal
    • H04B7/0617—Diversity systems; Multi-antenna system, i.e. transmission or reception using multiple antennas using two or more spaced independent antennas at the transmitting station using simultaneous transmission of weighted versions of same signal for beam forming

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Transmitters (AREA)
  • Variable-Direction Aerials And Aerial Arrays (AREA)
  • Networks Using Active Elements (AREA)
CN202080076445.1A 2019-12-06 2020-11-05 具有有源信号相位生成的移相器 Pending CN114641929A (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201962945043P 2019-12-06 2019-12-06
US62/945,043 2019-12-06
US16/785,440 2020-02-07
US16/785,440 US11569555B2 (en) 2019-12-06 2020-02-07 Phase shifter with active signal phase generation
PCT/US2020/059209 WO2021113011A1 (en) 2019-12-06 2020-11-05 Phase shifter with active signal phase generation

Publications (1)

Publication Number Publication Date
CN114641929A true CN114641929A (zh) 2022-06-17

Family

ID=76209250

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080076445.1A Pending CN114641929A (zh) 2019-12-06 2020-11-05 具有有源信号相位生成的移相器

Country Status (7)

Country Link
US (1) US11569555B2 (https=)
EP (1) EP4070465A1 (https=)
JP (1) JP7682878B2 (https=)
KR (1) KR20220112752A (https=)
CN (1) CN114641929A (https=)
BR (1) BR112022010330A2 (https=)
WO (1) WO2021113011A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240235536A1 (en) * 2023-01-10 2024-07-11 Samsung Electronics Co., Ltd Phased array transceiver including a bidirectional phase shifter
US20240291533A1 (en) * 2023-02-24 2024-08-29 Georgia Tech Research Corporation D-band vector modulator phase-shifter with delay line-based differential quadrature generation

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102020206800B4 (de) * 2020-05-29 2022-12-15 Infineon Technologies Ag Phasenschieberkonzept und Radartransmitterkonzept
US11349503B2 (en) * 2020-08-24 2022-05-31 Qualcomm Incorporated Phase shifter with compensation circuit
US11381266B1 (en) * 2020-12-31 2022-07-05 Iridium Satellite Llc Wireless communication with interference mitigation
US12381528B2 (en) * 2021-03-09 2025-08-05 Skyworks Solutions, Inc. Bidirectional variable gain amplifiers for radio frequency communication systems
US20220321201A1 (en) * 2021-04-06 2022-10-06 At&T Intellectual Property I, L.P. Radiofrequency communications system having an amplifier used bidirectionally
US12068724B2 (en) * 2021-08-16 2024-08-20 Qualcomm Incorporated Radio frequency phase shifter with variable input capacitance
US20240072402A1 (en) * 2022-08-30 2024-02-29 Texas Instruments Incorporated Gain invariant bidirectional phase shifter
US20240322795A1 (en) * 2023-03-24 2024-09-26 Qualcomm Incorporated Transmit (tx) receive (rx) phased array system
US20260081561A1 (en) * 2024-09-17 2026-03-19 Qualcomm Incorporated Millimeter wave (mmw) radio frequency (rf) front end

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CN105915196A (zh) * 2016-05-17 2016-08-31 中国电子科技集团公司第三十八研究所 一种cmos宽度有源移相器电路
CN106605366A (zh) * 2014-08-28 2017-04-26 高通股份有限公司 高准确度毫米波/射频宽带同相和正交生成
WO2018135151A1 (ja) * 2017-01-18 2018-07-26 三菱電機株式会社 可変利得増幅器およびベクトル合成型移相器
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US20180337658A1 (en) * 2017-05-18 2018-11-22 Imec Vzw RF Phase Shifting Device
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240235536A1 (en) * 2023-01-10 2024-07-11 Samsung Electronics Co., Ltd Phased array transceiver including a bidirectional phase shifter
US12431880B2 (en) * 2023-01-10 2025-09-30 Samsung Electronics Co., Ltd. Phased array transceiver including a bidirectional phase shifter
US20240291533A1 (en) * 2023-02-24 2024-08-29 Georgia Tech Research Corporation D-band vector modulator phase-shifter with delay line-based differential quadrature generation

Also Published As

Publication number Publication date
WO2021113011A1 (en) 2021-06-10
US11569555B2 (en) 2023-01-31
JP2023504356A (ja) 2023-02-03
BR112022010330A2 (pt) 2022-08-16
KR20220112752A (ko) 2022-08-11
EP4070465A1 (en) 2022-10-12
JP7682878B2 (ja) 2025-05-26
US20210175589A1 (en) 2021-06-10

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