CN114619049A - Process development method for selective laser melting forming of metal material - Google Patents

Process development method for selective laser melting forming of metal material Download PDF

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CN114619049A
CN114619049A CN202210253104.8A CN202210253104A CN114619049A CN 114619049 A CN114619049 A CN 114619049A CN 202210253104 A CN202210253104 A CN 202210253104A CN 114619049 A CN114619049 A CN 114619049A
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sample
scanning
selective laser
laser melting
development method
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CN114619049B (en
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王强
张士亨
高超峰
汤华平
饶衡
毕云杰
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Ji Hua Laboratory
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F10/00Additive manufacturing of workpieces or articles from metallic powder
    • B22F10/20Direct sintering or melting
    • B22F10/28Powder bed fusion, e.g. selective laser melting [SLM] or electron beam melting [EBM]
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B22CASTING; POWDER METALLURGY
    • B22FWORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F10/00Additive manufacturing of workpieces or articles from metallic powder
    • B22F10/80Data acquisition or data processing
    • B22F10/85Data acquisition or data processing for controlling or regulating additive manufacturing processes
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00Processes of additive manufacturing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B33ADDITIVE MANUFACTURING TECHNOLOGY
    • B33YADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y50/00Data acquisition or data processing for additive manufacturing
    • B33Y50/02Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02PCLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P10/00Technologies related to metal processing
    • Y02P10/25Process efficiency

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Abstract

The invention relates to a process development method for selective laser melting and forming of a metal material, which comprises the following steps: measuring the values of D50 and D90 on the basis that the sphericity of the metal powder to be formed is more than 90%, and setting the scanning layer thickness t of the SLM process according to the value of D50 or D90; designing a two-dimensional parameter matrix related to the laser power P and the scanning speed v; forming a single-channel single-layer sample; observing the formed single-channel single-layer sample, and screening out a sample with good forming appearance and continuous and uniform forming property; cutting the screened sample at the middle part along the direction perpendicular to the scanning direction by utilizing linear cutting to prepare a metallographic sample, and measuring and calculating the porosity eta; observing the internal structure of the sample with the lowest porosity, and measuring the depth d and the size r of a molten pool; calculating a critical scanning interval h' according to the size r of the molten pool; and calculating the scanning interval h according to the scanning interval h', and determining the scanning layer thickness t, the laser power P, the scanning speed v and the scanning interval h of four process parameters required by SLM forming.

Description

Process development method for selective laser melting forming metal material
Technical Field
The invention relates to the technical field of selective laser melting additive manufacturing, in particular to a process development method for forming a metal material by selective laser melting.
Background
With the rapid development of additive manufacturing technology, a Selective Laser Melting (SLM) technology is based on the basic principle of "discrete + stacking", and metal powder is melted layer by layer and stacked into a solid metal component by using a high-energy Laser beam, so that rapid and mold-free forming of a high-performance complex structural component can be realized. At present, the selective laser melting technology is widely applied to the fields of aerospace, automobiles, medical treatment, mold industry and the like. In the selective laser melting forming process, the process parameters are key factors for ensuring material forming, and mainly comprise four core process parameters of laser power P, scanning speed v, scanning interval h and scanning layer thickness t. For the development of the SLM forming process parameters of brand new materials, a large number of process experiments are often required to be designed for exploration, and then the screening range of the process parameters is gradually reduced until a group of optimal process parameters is found, so that the process development process needs a large amount of time and has low efficiency.
Disclosure of Invention
The invention aims to provide a process development method for selective laser melting forming of a metal material, which can efficiently realize the development of optimal process parameters and effectively shorten the development time of process parameters of brand new materials.
The invention provides a process development method for selective laser melting and forming of a metal material, which comprises the following steps:
s1, selecting metal powder to be formed with the sphericity of more than 90%;
s2, measuring the particle size distribution of the metal powder to be formed, determining the values of D50 and D90, and setting the scanning layer thickness t of the selective laser melting process according to the values of D50 or D90;
s3, designing a two-dimensional parameter matrix related to the laser power P and the scanning speed v;
s4, forming a single-channel single-layer sample by using the designed two-dimensional parameter matrix of the scanning layer thickness t, the laser power P and the scanning speed v;
s5, screening out a sample with good forming appearance and continuous and uniform forming property from the formed single-channel single-layer sample;
s6, cutting the middle part of the sample screened in the step S5 along the direction vertical to the scanning direction by utilizing linear cutting to prepare a metallographic sample, measuring and calculating the porosity eta of the metallographic sample, and screening the sample with the lowest porosity eta;
s7, judging whether the lowest porosity eta meets the use requirement, if so, executing a step S8, and if not, returning to the step S3;
s8, observing the internal structure of the sample with the lowest porosity eta screened in the step S6, and measuring the depth d of the molten pool of the sample with the lowest porosity eta;
s9, judging whether the depth d of the molten pool meets the requirement that the depth d of the molten pool is larger than the scanning layer thickness t, if so, executing a step S10, and if not, returning to the step S3;
s10, determining the molten pool size r of the sample with the lowest porosity eta in a fitting and measuring mode, and calculating the critical scanning distance h' according to the measured molten pool size r and the scanning layer thickness t;
s11, calculating according to the critical scanning distance h' to obtain a scanning distance h;
s12, the block sample is formed by using the scanning layer thickness t determined in step S2, the laser power P and the scanning speed v corresponding to the sample with the lowest porosity η screened in step S6, and the scanning pitch h calculated in step S11, and whether the formability of the block sample is good or not is observed, and if yes, the development is completed, and if no, the process returns to step S3.
In an embodiment of the present invention, in step S1, a scanning electron microscope is used to observe a powder morphology of the metal powder to be formed, where the metal powder to be formed is any one of a titanium alloy powder, an aluminum alloy powder, a copper alloy powder, and an iron-carbon alloy powder, or the metal powder to be formed is a high temperature alloy powder.
In an embodiment of the present invention, in step S2, the particle size distribution of the metal powder to be formed is measured by a laser particle sizer, and when the scanning layer thickness t is set, integer multiples of the value of D50 or D90 adjacent to ten are rounded.
In one embodiment of the present invention, the laser power P set in step S3 is in the range of 50W-900W, and the scanning speed v is in the range of 300 mm/S-1500 mm/S.
In one embodiment of the present invention, in step S4, the length of the single-pass single-layer sample is 4-8 mm.
In one embodiment of the present invention, the shaped single-channel monolayer specimen is observed by using a confocal laser microscope in step S5.
In an embodiment of the present invention, the porosity η of the metallographic specimen is measured and calculated using archimedes drainage in step S6.
In an embodiment of the present invention, in step S7, when the lowest porosity η satisfies η < 0.5%, the use requirement is satisfied.
In an embodiment of the present invention, the internal structure of the sample with the lowest porosity η selected in step S6 is observed by a metallographic microscope in step S8.
In one embodiment of the present invention, in step S10, the critical scan pitch h' is 2 (r)2-t2)1/2
In an embodiment of the invention, in step S11, the scanning pitch h is 0.5 to 0.8 times h ', i.e. the range of the scanning pitch h is 0.5h ' to 0.8h '.
In one embodiment of the present invention, the size of the square sample in step S12 is 10mm to 15 mm.
The process development method for selective laser melting forming of the metal material can effectively reduce the number of experiments in the development process of SLM process parameters and shorten the process development time, and can be used not only in the development process of general process parameters but also in the optimization of the existing process parameters. The technological parameters developed by the method can ensure the stability and consistency of the SLM forming component, and the comprehensive performance meets the use requirements.
Further objects and advantages of the invention will be fully apparent from the ensuing description and drawings.
Drawings
Fig. 1 is a schematic flow chart of the process development method for selective laser melting and forming of metal materials according to the present invention.
FIG. 2 is a scanning electron micrograph of 316L stainless steel powder used in example 1.
FIG. 3 is a schematic diagram of a sample bath fit.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The underlying principles of the invention, as defined in the following description, may be applied to other embodiments, adaptations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
It will be understood by those skilled in the art that in the present disclosure, the terms "vertical," "lateral," "up," "down," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, the above terms should not be construed as limiting the present invention.
It is understood that the terms "a" and "an" should be interpreted as meaning "at least one" or "one or more," i.e., that a quantity of one element may be one in one embodiment, while a quantity of another element may be plural in other embodiments, and the terms "a" and "an" should not be interpreted as limiting the quantity.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
As shown in fig. 1, the process development method for selective laser melting and forming metal material of the present invention comprises the steps of:
s1, selecting metal powder to be formed with the sphericity of more than 90%;
s2, measuring the particle size distribution of the metal powder to be formed, determining the values of D50 and D90, and setting the scanning layer thickness t of the selective laser melting process according to the values of D50 or D90;
s3, designing a two-dimensional parameter matrix related to the laser power P and the scanning speed v;
s4, forming a single-channel single-layer sample by using the designed two-dimensional parameter matrix of the scanning layer thickness t, the laser power P and the scanning speed v;
s5, screening out a sample with good forming appearance and continuous and uniform forming property from the formed single-channel single-layer sample;
s6, cutting the middle part of the sample screened in the step S5 along the direction perpendicular to the scanning direction by utilizing linear cutting to prepare a metallographic sample, measuring and calculating the porosity eta of the metallographic sample, and screening the sample with the lowest porosity eta;
s7, judging whether the lowest porosity eta meets the use requirement, if so, executing a step S8, and if not, returning to the step S3;
s8, observing the internal structure of the sample with the lowest porosity eta screened in the step S6, and measuring the depth d of the molten pool of the sample with the lowest porosity eta;
s9, judging whether the depth d of the molten pool meets the requirement that the depth d of the molten pool is larger than the scanning layer thickness t, if so, executing a step S10, and if not, returning to the step S3;
s10, determining the size r of the molten pool of the sample with the lowest porosity eta through fitting and measuring, and calculating the critical scanning distance h' according to the measured size r of the molten pool and the scanning layer thickness t;
s11, calculating according to the critical scanning distance h' to obtain a scanning distance h;
s12, the block sample is formed by using the scanning layer thickness t determined in step S2, the laser power P and the scanning speed v corresponding to the sample with the lowest porosity η screened in step S6, and the scanning pitch h calculated in step S11, and whether the formability of the block sample is good or not is observed, and if yes, the development is completed, and if no, the process returns to step S3.
It is understood that in order to meet the use requirement of the SLM technology, the metal powder to be formed with the sphericity of more than 90% needs to be screened out in step S1.
Specifically, in step S1, a scanning electron microscope is used to observe the powder morphology of the metal powder to be formed, where the metal powder to be formed is any one of titanium alloy powder, aluminum alloy powder, copper alloy powder, and iron-carbon alloy powder, or the metal powder to be formed is high-temperature alloy powder, or the metal powder to be formed is a brand-new metal powder material suitable for the SLM forming process, which is not limited by the present invention.
Specifically, in step S2, the particle size distribution of the metal powder to be formed is measured using a laser particle sizer, and when the scanning layer thickness t is set, integer multiples of adjacent ten of the value D50 or D90 are taken by a rounding method.
It is worth mentioning that the laser frequency P in the two-dimensional parameter matrix in step S3 should be determined according to the maximum rated laser power value of the laser used in the SLM device. If the maximum rated laser power value of the laser is 500W, the set value of the laser power P is within the range of 50W-450W; if the maximum rated laser power value of the laser is 1000W, the laser power P is set to be within the range of 100W-900W. That is, the laser power P set in step S3 is in the range of 50W to 900W.
It should be noted that the scanning speed v in step S3 is different depending on the selection of the laser power P, and a high scanning speed is selected when the laser power is high, and a low scanning speed is selected when the laser power is low, wherein the scanning speed v is set in the range of 300mm/S to 1500 mm/S.
Further, in step S4, the length of the formed single-pass monolayer sample is 4-8 mm. And step S4 further includes a step of numbering the formed single-pass single-layer samples according to natural numbers, so as to facilitate screening out single-pass single-layer samples with corresponding numbers in subsequent steps, and facilitate subsequent test records.
Specifically, in step S5, the shaped single-channel monolayer specimen was observed using a laser confocal microscope.
It will be appreciated that the lowest porosity sample is screened in step S6, with the lowest porosity representing the best quality of formation. It should be understood that the porosity η may have different values for different metallic materials.
It is worth mentioning that, in step S6, the porosity η of the metallographic specimen is measured and calculated by the archimedes drainage method.
Specifically, in step S7, the use requirement is satisfied when the lowest porosity η satisfies η < 0.5%.
Specifically, in step S8, the metallographic microscope is used to observe the internal structure of the sample with the lowest porosity η screened in step S6, that is, to observe the shape of the molten pool of the sample with the lowest porosity η, and the molten pool width w and the molten pool depth d are measured.
It will be appreciated that the step S9 of ensuring that the depth d of the melt pool is greater than the scan layer thickness t is required for the subsequent steps in order to meet the requirements of the SLM forming process.
Specifically, in step S10, the shape of the molten pool is fitted using a curve, as shown in fig. 3, the molten pool size r is measured from the fitted molten pool, and the critical scanning pitch h' 2 (r) is calculated from the measured molten pool size r and the scanning layer thickness t determined in step S2 (r is the critical scanning pitch h ═ 2)2-t2)1/2
That is, in step S10, the size r of the molten pool is determined by fitting and measurement, and the critical scanning pitch h' is calculated.
Specifically, as shown in FIG. 3, the relation between the bath width w and the bath size r is: the starting point of the pool size r (point B in fig. 3) is the midpoint of the pool width w (distance AC in fig. 3).
Further, in step S11, the scanning pitch h is calculated according to the critical scanning pitch h 'calculated in step S10, wherein the scanning pitch h is 0.5 to 0.8 times h', that is, the range of the scanning pitch h is 0.5h 'to 0.8 h'.
It should be noted that the size of the square sample in step S12 is 10mm to 15mm, that is, the forming of the square sample of 10mm × 10mm × 10mm may be performed in step S12 to observe the formability, or the forming of the square sample of 15mm × 15mm × 15mm may be performed to observe the formability, and the size of the formed square sample is not limited in the present invention.
The invention is described in detail below with reference to the figures and specific embodiments.
Example 1
Step one, 316L stainless steel powder material is selected as a case for explanation, a Scanning Electron Microscope (SEM) picture of the 316L stainless steel powder refers to fig. 2, and the sphericity is more than 90%;
step two, measuring the particle size distribution of 316L stainless steel powder by using a laser particle sizer, wherein D50 is 45.9 μm, D90 is 67.3 μm, and the scanning layer thickness t is 50 μm according to D50;
step three, setting a two-dimensional parameter matrix related to the laser power P and the scanning speed v, as shown in the following table 1:
TABLE 1 two-dimensional parameter matrix for laser power P and scanning speed v
Figure BDA0003547641150000081
Step four, forming a single-channel single-layer sample by using the scanning layer thickness t which is 50 mu m and the two-dimensional parameter matrix in the step three;
observing all formed single-channel single-layer samples by using a laser confocal microscope, wherein the sample numbers with good forming appearance and continuous and uniform forming performance comprise (1), (8), (9), (10), (15), (16), (17), (18), (22), (23) and (24);
sixthly, preparing a metallographic sample from the sample screened in the fifth step by using linear cutting, and measuring and calculating the porosity of the metallographic sample by using an Archimedes drainage method, wherein the porosity of the sample numbered as (17) is the lowest and is less than 0.5%;
step seven, judging that the lowest porosity is less than 0.5 percent and meets the use requirement, and executing step eight;
step eight, observing the molten pool morphology of the sample with the number (17) by using a metallographic microscope, and actually measuring that the molten pool width w is 155 μm (the AC distance in fig. 3), the molten pool depth d is 135 μm (the BG distance in fig. 3), and the molten pool size r is 88 μm (the BI distance in fig. 3);
step nine, based on the depth d of the molten pool obtained by measurement in the step eight, the depth d of the molten pool is larger than the scanning layer thickness t, and the step ten is executed;
step ten, adopting a curve to fit the shape of the molten pool, wherein the shape of the molten pool mainly refers to the shape of the molten pool in the longitudinal section, measuring the size r of the molten pool through a metallographic microscope as shown in figure 3, and calculating the critical scanning distance h' to be 2 (r) according to the measured size r of the molten pool and the scanning layer thickness t2-t2)1/2145 μm (O in fig. 3)1O2Or GH distance);
step eleven, calculating the scanning distance h to be 0.75h to be 110 μm according to the critical scanning distance h';
step twelve, the scanning layer thickness t determined in step two is 50 μm, the laser power P corresponding to the sample with number (17) screened in step six is 350W, the scanning speed v is 900mm/s, and the scanning pitch h calculated in step eleven is 110 μm, and a 10mm × 10mm × 10mm square sample is formed, the formability is good, and the SLM process parameter development is completed.
Generally speaking, the invention provides a process development method capable of rapidly developing SLM process parameters, and the process development method for selective laser melting forming of metal materials can effectively reduce the number of experiments in the SLM process parameter development process, shorten the process development time, and can be used for not only the development process of general process parameters, but also the optimization of the existing process parameters. The technological parameters developed by the method can ensure the stability and consistency of the SLM forming component, and the comprehensive performance meets the use requirements.
All possible combinations of the technical features in the above embodiments may not be described for the sake of brevity, but should be considered as being within the scope of the present disclosure as long as there is no contradiction between the combinations of the technical features.
The above examples only express preferred embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (10)

1. A process development method for selective laser melting forming of metal materials is characterized by comprising the following steps:
s1, selecting metal powder to be formed with the sphericity of more than 90%;
s2, measuring the particle size distribution of the metal powder to be formed, determining the values of D50 and D90, and setting the scanning layer thickness t of the selective laser melting process according to the values of D50 or D90;
s3, designing a two-dimensional parameter matrix related to the laser power P and the scanning speed v;
s4, forming a single-channel single-layer sample by using the designed two-dimensional parameter matrix of the scanning layer thickness t, the laser power P and the scanning speed v;
s5, screening out a sample with good forming appearance and continuous and uniform forming property from the formed single-channel single-layer sample;
s6, cutting the middle part of the sample screened in the step S5 along the direction perpendicular to the scanning direction by utilizing linear cutting to prepare a metallographic sample, measuring and calculating the porosity eta of the metallographic sample, and screening the sample with the lowest porosity eta;
s7, judging whether the lowest porosity eta meets the use requirement, if so, executing a step S8, and if not, returning to the step S3;
s8, observing the internal structure of the sample with the lowest porosity eta screened in the step S6, and measuring the depth d of the molten pool of the sample with the lowest porosity eta;
s9, judging whether the depth d of the molten pool meets the requirement that the depth d of the molten pool is larger than the scanning layer thickness t, if so, executing a step S10, otherwise, returning to the step S3;
s10, determining the molten pool size r of the sample with the lowest porosity eta in a fitting and measuring mode, and calculating the critical scanning distance h' according to the measured molten pool size r and the scanning layer thickness t;
s11, calculating according to the critical scanning distance h' to obtain a scanning distance h;
s12, the square sample is formed by using the scanning layer thickness t determined in step S2, the laser power P and the scanning speed v corresponding to the sample having the lowest porosity η screened in step S6, and the scanning pitch h calculated in step S11, and whether the formability of the square sample is good or not is observed, and if yes, the development is completed, and if no, the process returns to step S3.
2. The process development method for selective laser melting of metal materials according to claim 1, wherein in step S1, a scanning electron microscope is used to observe the powder morphology of the metal powder to be formed, wherein the metal powder to be formed is any one of titanium alloy powder, aluminum alloy powder, copper alloy powder and iron-carbon alloy powder, or the metal powder to be formed is high temperature alloy powder.
3. The process development method for selective laser melting of shaped metal material as claimed in claim 1, characterized in that in step S2, the particle size distribution of the metal powder to be shaped is measured with a laser particle sizer, and when the scanning layer thickness t is set, integer multiples of the value of D50 or D90 close to ten are rounded.
4. The process development method for selective laser melting of shaped metal material according to claim 1, characterized in that the laser power P set in step S3 is in the range of 50W-900W and the scanning speed v is in the range of 300 mm/S-1500 mm/S.
5. The process development method for selective laser melting forming of metal materials according to claim 1, characterized in that in step S4, the length of the formed single-pass monolayer specimen is 4-8 mm.
6. The process development method for selective laser melting of shaped metal material according to claim 1, wherein in step S5, the shaped single-channel single-layer sample is observed using confocal laser microscopy.
7. The process development method for selective laser melting of shaped metallic materials according to claim 1, characterized in that in step S6 the porosity η of the metallographic specimen is measured and calculated using archimedes drainage.
8. The process development method for selective laser melting of shaped metallic materials according to claim 1, wherein the minimum porosity η of step S7 satisfies the requirement when η < 0.5%.
9. The process development method for a selective laser melting shaping metallic material of claim 1, wherein the internal structure of the sample selected in step S6 is observed with a metallographic microscope in step S8.
10. The process development method for selective laser melting of shaped metal material according to claim 1, wherein in step S10, the critical scan distance h ═ 2 (r)2-t2)1/2(ii) a In step S11, the scanning pitch h ranges from 0.5h 'to 0.8 h'.
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Cited By (1)

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CN116882210A (en) * 2023-09-06 2023-10-13 季华实验室 Process development method, device, equipment and storage medium for porous lattice structure

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