CN114599998A - 一种接收芯片及其制备方法、测距装置、可移动平台 - Google Patents
一种接收芯片及其制备方法、测距装置、可移动平台 Download PDFInfo
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- CN114599998A CN114599998A CN202080014792.1A CN202080014792A CN114599998A CN 114599998 A CN114599998 A CN 114599998A CN 202080014792 A CN202080014792 A CN 202080014792A CN 114599998 A CN114599998 A CN 114599998A
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S17/00—Systems using the reflection or reradiation of electromagnetic waves other than radio waves, e.g. lidar systems
- G01S17/88—Lidar systems specially adapted for specific applications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
一种接收芯片及其制备方法、测距装置、可移动平台。所述制备方法包括：提供第一晶圆，所述第一晶圆的第一表面形成有多个背照式雪崩光电二极管；提供第二晶圆，所述第二晶圆的第一表面形成有多个信号处理单元；将所述第一晶圆的第一表面与所述第二晶圆的第一表面键合，以使上下对应的所述背照式雪崩光电二极管与所述信号处理单元彼此电连接。本申请所述芯片可以利用现有半导体制造平台和技术，大规模、低成本、高可靠性地生产出背照式雪崩光电二极管面阵芯片，以满足固态激光雷达的对接收模块的需求。
Description
PCT国内申请，说明书已公开。
Claims (31)
- PCT国内申请，权利要求书已公开。
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/CN2020/118149 WO2022061820A1 (zh) | 2020-09-27 | 2020-09-27 | 一种接收芯片及其制备方法、测距装置、可移动平台 |
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| Publication Number | Publication Date |
|---|---|
| CN114599998A true CN114599998A (zh) | 2022-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202080014792.1A Pending CN114599998A (zh) | 2020-09-27 | 2020-09-27 | 一种接收芯片及其制备方法、测距装置、可移动平台 |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN114599998A (zh) |
| WO (1) | WO2022061820A1 (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116612804A (zh) * | 2023-07-19 | 2023-08-18 | 芯天下技术股份有限公司 | 一种芯片崩边检测电路及存储芯片 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115843150B (zh) * | 2022-09-24 | 2024-04-09 | 深圳市实锐泰科技有限公司 | 一种加密电路板制作方法 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070102466A (ko) * | 2007-10-02 | 2007-10-18 | 광주과학기술원 | 화합물 반도체의 선택적 식각을 이용한 마이크로렌즈 및마이크로렌즈가 집적된 광전소자 제조 방법 |
| US20090046183A1 (en) * | 2005-03-25 | 2009-02-19 | Fujifilm Corporation | Solid state imaging device and manufacturing method thereof |
| CN105842706A (zh) * | 2015-01-14 | 2016-08-10 | 上海丽恒光微电子科技有限公司 | 激光三维成像装置及其制造方法 |
| US20190288026A1 (en) * | 2017-03-01 | 2019-09-19 | G-Ray Industries Sa | Electromagnetic radiation detector based on wafer bonding |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8368995B2 (en) * | 2009-10-13 | 2013-02-05 | Skorpios Technologies, Inc. | Method and system for hybrid integration of an opto-electronic integrated circuit |
| CN107830939B (zh) * | 2017-10-30 | 2019-09-06 | 湖北京邦科技有限公司 | 一种彩色数字硅光电倍增器像素单元 |
| CN110783431A (zh) * | 2019-11-13 | 2020-02-11 | 中国电子科技集团公司第四十四研究所 | Apd阵列器件的制作方法 |
-
2020
- 2020-09-27 CN CN202080014792.1A patent/CN114599998A/zh active Pending
- 2020-09-27 WO PCT/CN2020/118149 patent/WO2022061820A1/zh active Application Filing
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090046183A1 (en) * | 2005-03-25 | 2009-02-19 | Fujifilm Corporation | Solid state imaging device and manufacturing method thereof |
| KR20070102466A (ko) * | 2007-10-02 | 2007-10-18 | 광주과학기술원 | 화합물 반도체의 선택적 식각을 이용한 마이크로렌즈 및마이크로렌즈가 집적된 광전소자 제조 방법 |
| CN105842706A (zh) * | 2015-01-14 | 2016-08-10 | 上海丽恒光微电子科技有限公司 | 激光三维成像装置及其制造方法 |
| US20190288026A1 (en) * | 2017-03-01 | 2019-09-19 | G-Ray Industries Sa | Electromagnetic radiation detector based on wafer bonding |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN116612804A (zh) * | 2023-07-19 | 2023-08-18 | 芯天下技术股份有限公司 | 一种芯片崩边检测电路及存储芯片 |
| CN116612804B (zh) * | 2023-07-19 | 2023-10-10 | 芯天下技术股份有限公司 | 一种芯片崩边检测电路及存储芯片 |
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| Publication number | Publication date |
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| WO2022061820A1 (zh) | 2022-03-31 |
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