CN114571089A - Etching method for polytetrafluoroethylene surface - Google Patents
Etching method for polytetrafluoroethylene surface Download PDFInfo
- Publication number
- CN114571089A CN114571089A CN202210244077.8A CN202210244077A CN114571089A CN 114571089 A CN114571089 A CN 114571089A CN 202210244077 A CN202210244077 A CN 202210244077A CN 114571089 A CN114571089 A CN 114571089A
- Authority
- CN
- China
- Prior art keywords
- laser
- polytetrafluoroethylene
- etching
- etching method
- etched
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229920001343 polytetrafluoroethylene Polymers 0.000 title claims abstract description 100
- 239000004810 polytetrafluoroethylene Substances 0.000 title claims abstract description 99
- -1 polytetrafluoroethylene Polymers 0.000 title claims abstract description 94
- 238000005530 etching Methods 0.000 title claims abstract description 30
- 238000000034 method Methods 0.000 title claims abstract description 26
- 238000010329 laser etching Methods 0.000 claims abstract description 30
- 239000007789 gas Substances 0.000 claims description 14
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims description 10
- 238000001816 cooling Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 229910002092 carbon dioxide Inorganic materials 0.000 claims description 5
- 239000001569 carbon dioxide Substances 0.000 claims description 5
- 238000004140 cleaning Methods 0.000 claims description 5
- 229910052734 helium Inorganic materials 0.000 claims description 4
- 239000001307 helium Substances 0.000 claims description 4
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 4
- 239000000853 adhesive Substances 0.000 abstract description 8
- 230000001070 adhesive effect Effects 0.000 abstract description 8
- 238000011282 treatment Methods 0.000 abstract description 5
- URXNVXOMQQCBHS-UHFFFAOYSA-N naphthalene;sodium Chemical compound [Na].C1=CC=CC2=CC=CC=C21 URXNVXOMQQCBHS-UHFFFAOYSA-N 0.000 abstract description 4
- 239000002360 explosive Substances 0.000 abstract description 2
- 239000007788 liquid Substances 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 230000008569 process Effects 0.000 abstract description 2
- 238000012545 processing Methods 0.000 abstract description 2
- 238000011084 recovery Methods 0.000 abstract description 2
- 239000002351 wastewater Substances 0.000 abstract description 2
- 230000000052 comparative effect Effects 0.000 description 18
- 238000001878 scanning electron micrograph Methods 0.000 description 7
- 238000012360 testing method Methods 0.000 description 7
- 239000011230 binding agent Substances 0.000 description 6
- 239000000463 material Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000921 elemental analysis Methods 0.000 description 4
- 238000013532 laser treatment Methods 0.000 description 4
- 238000001228 spectrum Methods 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 238000006115 defluorination reaction Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000007664 blowing Methods 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000003486 chemical etching Methods 0.000 description 2
- 238000007385 chemical modification Methods 0.000 description 2
- 238000013507 mapping Methods 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 1
- 229920006362 Teflon® Polymers 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000001154 acute effect Effects 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 239000000835 fiber Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/362—Laser etching
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
- B23K26/402—Removing material taking account of the properties of the material involved involving non-metallic material, e.g. isolators
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/70—Auxiliary operations or equipment
- B23K26/702—Auxiliary equipment
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Abstract
The invention belongs to the technical field of polytetrafluoroethylene processing, and particularly relates to a polytetrafluoroethylene surface etching method. The invention provides a polytetrafluoroethylene surface etching method, which comprises the following steps: carrying out laser etching on the surface of the polytetrafluoroethylene; the wavelength of the laser is 4-15 mu m. According to the invention, the surface of the polytetrafluoroethylene is etched by adopting laser, the peel strength of the etched polytetrafluoroethylene and the adhesive can reach 48.5-59.2N/10 mm, the peel strength is similar to that of the polytetrafluoroethylene and the adhesive etched by sodium naphthalene in the prior art, and the problems of waste water discharge, treatment liquid recovery, flammable and explosive production environment and the like are avoided in the etching process.
Description
Technical Field
The invention belongs to the technical field of polytetrafluoroethylene processing, and particularly relates to a polytetrafluoroethylene surface etching method.
Background
The polytetrafluoroethylene has high chemical stability and excellent chemical corrosion resistance, such as strong acid resistance, strong alkali resistance, strong oxidant resistance and the like, has outstanding heat resistance, cold resistance and wear resistance, has a long-term use temperature range of-200 to +250 ℃, has excellent electrical insulation, and is not influenced by temperature and frequency. But its poor surface adhesion greatly limits its application in high technology fields. The traditional polytetrafluoroethylene surface treatment technology is mostly carried out by a chemical etching method, and a chemical solution (such as a sodium naphthalene treatment solution) is contacted with the surface of a polytetrafluoroethylene product, so that a polytetrafluoroethylene molecular chain is defluorinated, active groups are grafted, and surface activation is realized, thereby improving the bonding performance. However, the method has the problems of waste water discharge, treatment liquid recovery, flammable and explosive production environment and the like, and does not meet increasingly strict environmental protection requirements.
Disclosure of Invention
The invention provides an etching method for the surface of polytetrafluoroethylene, which is safe and environment-friendly, and the etched polytetrafluoroethylene has good bonding performance.
The invention provides a polytetrafluoroethylene surface etching method, which comprises the following steps: carrying out laser etching on the surface of the polytetrafluoroethylene;
the wavelength of the laser is 4-15 mu m.
Preferably, the wavelength of the laser is 6-10.6 μm.
Preferably, the output power of the laser is 50W to 200W.
Preferably, the output power of the laser is 80W to 100W.
Preferably, the scanning speed of the laser is less than or equal to 7000 mm/s.
Preferably, the warpage of the polytetrafluoroethylene surface before laser etching is less than or equal to 2 mm.
Preferably, the laser etching is performed in a laser generator, the laser generator is a gas laser generator, and a working gas of the gas laser generator is a mixed gas of carbon dioxide, nitrogen and helium.
Preferably, the step of laser etching comprises: fixing the polytetrafluoroethylene, adjusting the distance between the polytetrafluoroethylene and a laser generator to enable the polytetrafluoroethylene surface to be at the laser focal length, and setting laser output power and laser scanning speed to enable laser to scan the polytetrafluoroethylene surface.
Preferably, the cleaning of the polytetrafluoroethylene is further included before the laser etching.
Preferably, cooling the polytetrafluoroethylene is further included after the laser etching.
Has the advantages that:
the invention provides a polytetrafluoroethylene surface etching method, which comprises the following steps: carrying out laser etching on the surface of the polytetrafluoroethylene; the wavelength of the laser is 4-15 mu m. The invention adopts laser to etch the surface of the polytetrafluoroethylene, thereby overcoming the factors of environmental pollution and the like brought by the traditional chemical etching technology. The invention adopts a physical method of laser etching to etch the surface of the polytetrafluoroethylene into a micropore structure, increases the contact area of the polytetrafluoroethylene and the binder, generates a physical hooking and locking effect after the binder enters the micropores, simultaneously carries out defluorination on the surface of the polytetrafluoroethylene during the laser etching so as to realize the chemical modification of the surface, and the polytetrafluoroethylene can be bonded with the binder from non-adhesiveness under the combined action of the two. In the invention, the laser wavelength of 4-15 μm can ensure the high laser energy absorption rate of the polytetrafluoroethylene, and if the laser wavelength exceeds the wavelength range, the laser energy absorption rate of the polytetrafluoroethylene is deteriorated, so that the laser cannot etch the polytetrafluoroethylene. The results of the examples show that the peel strength of the polytetrafluoroethylene of the invention after laser etching and the adhesive is 48.5-59.2N/10 mm, which is similar to that of the polytetrafluoroethylene etched by sodium naphthalene and the adhesive in the prior art.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is an SEM image of the surface of PTFE film after laser etching in example 3;
FIG. 2 is an SEM image of an untreated polytetrafluoroethylene surface of comparative example 1;
FIG. 3 is SEM images of the surface of polytetrafluoroethylene after laser etching in example 3 at different magnifications, wherein a is the SEM image at 500X magnification, b is the SEM image at 1000X magnification, c is the SEM image at 2000X magnification, and d is the SEM image at 5000X magnification;
FIG. 4 is an elemental analysis spectrum of the surface of polytetrafluoroethylene before laser treatment in example 3, wherein A is the position of the spectrum 1-2, and B and C are the elemental analysis spectra of the spectrum 1-2, respectively;
FIG. 5 is an element map of the laser-treated polytetrafluoroethylene surface of example 3, wherein I is the positions of maps 1-5, and II-V are the element analysis maps of maps 1-5, respectively;
FIG. 6 is a photograph showing the polytetrafluoroethylene of examples 1 to 3 and comparative examples 1 to 2 after the adhesion test.
Detailed Description
The invention provides a polytetrafluoroethylene surface etching method, which comprises the following steps: carrying out laser etching on the surface of the polytetrafluoroethylene;
the wavelength of the laser is 4-15 mu m.
In the invention, the laser wavelength is 4-15 μm, preferably 6-10.6 μm, and more preferably 7-8 μm; the laser with the wavelength can ensure high absorptivity of the polytetrafluoroethylene to the laser energy, and if the laser exceeds the wavelength range, the absorptivity of the polytetrafluoroethylene to the laser energy is deteriorated, so that the laser cannot etch the polytetrafluoroethylene.
In the present invention, the power of the laser is preferably 50 to 200W, more preferably 80 to 100W, and still more preferably 85 to 95W. The scanning speed of the laser is preferably less than or equal to 7000mm/s, more preferably 3000 mm/s-5000 mm/s, and further preferably 3500-4500 mm/s. The invention controls the laser output power and the laser scanning speed to be in the range, ensures that the laser energy received on unit area is in a proper range, can prevent the polytetrafluoroethylene surface with overlarge energy from being completely damaged, and can also prevent the polytetrafluoroethylene surface from forming a better microstructure and being incapable of performing defluorination modification due to the situation that the adhesion is reduced because the energy is too small.
In the invention, the warping degree of the polytetrafluoroethylene surface is preferably less than or equal to 2 mm. The warping degree is kept in the range, so that the polytetrafluoroethylene surface to be processed can be ensured to be in the focal length range of laser, and the maximum laser energy can be received, so that the surface can be etched.
In the present invention, the laser etching is preferably performed in a laser generator; the laser generator is preferably a gas laser generator; the working gas of the gas laser generator is preferably a mixed gas of carbon dioxide, nitrogen and helium. In an embodiment of the invention, the laser generator is embodied as a new sharp ti100 type laser generator.
In the present invention, it is preferable that the laser etching further includes cleaning polytetrafluoroethylene before the laser etching, and the cleaning manner in the present invention is not particularly limited, and may be a cleaning manner well known to those skilled in the art.
In the present invention, the step of laser etching preferably includes: fixing the polytetrafluoroethylene, adjusting the distance between the polytetrafluoroethylene and a laser generator to enable the polytetrafluoroethylene surface to be at the laser focal length, and setting laser output power and laser scanning speed to enable laser to scan the polytetrafluoroethylene surface. The distance between the polytetrafluoroethylene and the laser generator is not specially limited, so that the polytetrafluoroethylene can be in the laser focal distance, and a person skilled in the art can adjust the polytetrafluoroethylene to the laser focal distance according to different laser generators.
In the present invention, preferably, after the laser etching, the method further comprises cooling the etched polytetrafluoroethylene. The cooling method is not particularly limited in the present invention, and a cooling method known to those skilled in the art, such as air-blowing cooling, may be used. In the invention, the cooling function is to reduce the temperature of the polytetrafluoroethylene and prevent scalding.
In the invention, the surface of the polytetrafluoroethylene after laser etching is changed into a porous structure from a flat state, which increases the contact area of the polytetrafluoroethylene and the binder, and the binder can generate a physical hooking and locking effect after entering the micropores, and meanwhile, the surface of the polytetrafluoroethylene is defluorinated during laser etching, so that the chemical modification of the surface is realized, and the polytetrafluoroethylene can be bonded with the binder from non-adhesiveness under the combined action of the two, thereby improving the bonding effect.
For further explanation of the present invention, the following detailed description will be made with reference to the drawings and examples to provide a method for etching a polytetrafluoroethylene surface, which should not be construed as limiting the scope of the present invention.
The laser generator adopted in the following embodiments is a new acute ti100 type laser generator, and the working gas is a mixed gas of carbon dioxide, nitrogen and helium, wherein the volume content of the carbon dioxide is 4.5-16%, and the volume content of the nitrogen is 5.5-55%. The control system was set using Peking golden orange software. The surface warpage of the polytetrafluoroethylene materials used in the following examples and comparative examples is less than or equal to 2 mm.
Example 1
1) Placing a flat and clean polytetrafluoroethylene material on a bearing object of a laser generator for fixing;
2) adjusting the distance between the polytetrafluoroethylene and the laser generator to enable the surface of the polytetrafluoroethylene to be etched to be positioned at the laser focal length;
3) setting the laser power to be 100W, the etching speed to be 3000m/s and the laser wavelength to be 10.6 mu m, and enabling the laser to perform scanning on the surface of the polytetrafluoroethylene;
4) and (4) taking down the polytetrafluoroethylene material after the scanning is finished, and blowing for cooling.
Example 2
The laser power was 100W, and the etching rate was 2000m/s, and the rest was the same as in example 1.
Example 3
The laser power was 80W, the etching rate was 3500m/s, and the process was the same as in example 1.
Comparative example 1
Untreated polytetrafluoroethylene was used as comparative example 1.
Comparative example 2
As comparative example 2, nafdium etched polytetrafluoroethylene was used.
Comparative example 3
The laser power was 30W, and the etching rate was 3500m/s, and the same as in example 1 was repeated.
Comparative example 4
The etching rate was 10000m/s, and the rest was the same as in example 1.
Comparative example 5
A fiber laser having a wavelength of 2.8 μm was used at a power of 80W. The rest is the same as in example 1.
Comparative example 6
The wavelength used was 1.064 μm, etching rate: 3000mm/s, power: 80W. The rest is the same as in example 1.
Peeling test
The 575H product of Taiwan Schlem Durawski GmbH is selected for testing, and the bonding condition and method adopt the technical standard provided by the adhesive manufacturer. 5 samples were produced for each of the examples and comparative examples, and after completion of the adhesion, a 180 ° peel test was performed using a stretcher at a stretching speed of 200 mm/min. The test results are shown in table 1, and the photographs of the tested real objects are shown in fig. 6.
TABLE 1 peeling test results of examples and comparative examples
As can be seen from Table 1, the laser etching treatment of PTFE according to the present invention can greatly improve the peel strength with the adhesive, and the result is similar to the conventional etching result with sodium naphthalene.
The scanning electron microscope observation of the laser etched polytetrafluoroethylene surface in example 3 shows the result in fig. 1. As can be seen from fig. 1, the surface of the teflon after laser etching has a porous structure.
The surface of the polytetrafluoroethylene in comparative example 1 was observed by a scanning electron microscope, and the result is shown in FIG. 2. As can be seen from FIG. 2, the surface of the un-etched PTFE film is flat.
The laser etched polytetrafluoroethylene surface of example 3 was observed by scanning electron microscopy at different magnifications, and the results are shown in fig. 3.
As can be seen from fig. 2 and 3, the surface of the ptfe after laser etching is changed from a flat state to a porous structure.
The elemental mapping analysis was performed on the polytetrafluoroethylene surface before the laser treatment in example 3, and the results are shown in table 2 and fig. 4;
the results of the elemental mapping analysis of the laser-treated polytetrafluoroethylene surface of example 3 are shown in table 3 and fig. 5.
TABLE 2 elemental analysis map results before laser treatment
TABLE 3 elemental analysis map results after laser treatment
As can be seen from tables 2 to 3 and FIGS. 4 to 5, the atomic percentage of F on the surface of the laser-etched PTFE film is reduced from 62.35 to 64.40% to 34.82 to 50.46% before the treatment, which shows that part of the C-F bonds are broken to generate the effect of defluorination and are combined with nitrogen in the air to generate C-N bonds.
The polytetrafluoroethylene surface obtained in comparative example 3 was visually observed, and no significant etching was observed, and the polytetrafluoroethylene sheet could be peeled off by hand after the adhesive was applied, with poor adhesion.
The polytetrafluoroethylene surface obtained in comparative example 4 was visually observed to have a clear untreated area, which was not satisfactory.
Comparative example 5 the polytetrafluoroethylene surface was visually observed with no etching effect.
The polytetrafluoroethylene obtained in comparative example 6 was touched with a hand on the surface of the material, and no change in the temperature of the material was observed, and no change in the surface was observed with the naked eye, and it was presumed that the absorption of the laser light of this wavelength by the material was very poor. The adhesive coating test showed no adhesion and no difference in adhesion from the untreated PTFE.
Although the present invention has been described in detail with reference to the above embodiments, it is only a part of the embodiments of the present invention, not all of the embodiments, and other embodiments can be obtained without inventive step according to the embodiments, and all of the embodiments are included in the scope of the present invention.
Claims (10)
1. A method for etching a polytetrafluoroethylene surface, comprising the steps of: carrying out laser etching on the surface of the polytetrafluoroethylene;
the wavelength of the laser is 4-15 mu m.
2. The etching method according to claim 1, wherein the laser has a wavelength of 6 to 10.6 μm.
3. The etching method according to claim 1, wherein the output power of the laser is 50W to 200W.
4. The etching method according to claim 1 or 3, wherein the output power of the laser is 80W to 100W.
5. The etching method according to claim 1, wherein the scanning speed of the laser is 7000mm/s or less.
6. The etching method of claim 1, wherein the warp of the polytetrafluoroethylene surface before laser etching is less than or equal to 2 mm.
7. The etching method according to claim 1, wherein the laser etching is performed in a laser generator, the laser generator is a gas laser generator, and a working gas of the gas laser generator is a mixed gas of carbon dioxide, nitrogen, and helium.
8. The etching method according to claim 7, wherein the step of laser etching comprises: fixing the polytetrafluoroethylene, adjusting the distance between the polytetrafluoroethylene and a laser generator to enable the polytetrafluoroethylene surface to be at the laser focal length, and setting laser output power and laser scanning speed to enable laser to scan the polytetrafluoroethylene surface.
9. The etching method of claim 1, further comprising cleaning the polytetrafluoroethylene prior to said laser etching.
10. The etching method of claim 1 or 8, further comprising cooling the polytetrafluoroethylene after the laser etching.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210244077.8A CN114571089A (en) | 2022-03-14 | 2022-03-14 | Etching method for polytetrafluoroethylene surface |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202210244077.8A CN114571089A (en) | 2022-03-14 | 2022-03-14 | Etching method for polytetrafluoroethylene surface |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN114571089A true CN114571089A (en) | 2022-06-03 |
Family
ID=81780015
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202210244077.8A Pending CN114571089A (en) | 2022-03-14 | 2022-03-14 | Etching method for polytetrafluoroethylene surface |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114571089A (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397863A (en) * | 1991-09-13 | 1995-03-14 | International Business Machines Corporation | Fluorinated carbon polymer composites |
| GB0921692D0 (en) * | 2009-12-11 | 2010-01-27 | Manvers Engineering Ltd | Oil collecting device |
| CN102134318A (en) * | 2011-01-14 | 2011-07-27 | 陈晓红 | Method for preparing bamboo charcoal/polyaniline composite material by adopting bamboo charcoal |
| US20130030548A1 (en) * | 2011-07-29 | 2013-01-31 | Southwest Research Institute | Engineered Tissue Implants And Methods Of Use Thereof |
| CN114058277A (en) * | 2021-12-04 | 2022-02-18 | 绿旗亚(义乌市)新材料有限公司 | Laser etching adhesive tape film for identification card and preparation method thereof |
-
2022
- 2022-03-14 CN CN202210244077.8A patent/CN114571089A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5397863A (en) * | 1991-09-13 | 1995-03-14 | International Business Machines Corporation | Fluorinated carbon polymer composites |
| GB0921692D0 (en) * | 2009-12-11 | 2010-01-27 | Manvers Engineering Ltd | Oil collecting device |
| CN102134318A (en) * | 2011-01-14 | 2011-07-27 | 陈晓红 | Method for preparing bamboo charcoal/polyaniline composite material by adopting bamboo charcoal |
| US20130030548A1 (en) * | 2011-07-29 | 2013-01-31 | Southwest Research Institute | Engineered Tissue Implants And Methods Of Use Thereof |
| CN114058277A (en) * | 2021-12-04 | 2022-02-18 | 绿旗亚(义乌市)新材料有限公司 | Laser etching adhesive tape film for identification card and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 刘爱华等: "聚四氟乙烯材料表面激光改性与刻蚀", 光学学报, vol. 26, no. 7, 31 July 2006 (2006-07-31), pages 1073 - 1077 * |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106268370B (en) | Polytetrafluoroethylene film low temperature plasma hydrophilic modifying and timeliness modification processing method | |
| CN101301591B (en) | Hydrophilic modification method of polytetrafluorethylene separation membrane surface | |
| CN110039852A (en) | A kind of preparation method of PTFE copper-clad plate | |
| CN108641421A (en) | A kind of preparation method of graphene-based self-repairing super hydrophobic coating | |
| CN104233777A (en) | Preparation method and application of surface modified polyimide fibers | |
| CN103614915B (en) | Super-hydrophobic natural fiber fabric and preparation method thereof | |
| CN110181171A (en) | Pass through the method for laser processing control polymer matrix composites surface hydrophilic and hydrophobic | |
| US20070158020A1 (en) | Method for modificating fluoropolymers and their application | |
| CN114571089A (en) | Etching method for polytetrafluoroethylene surface | |
| CN106397804B (en) | A kind of polyether-ether-ketone resin obtains the processing method on different porous structure surfaces | |
| CN108543686A (en) | The preparation method of iron group metal super-double-hydrophobic surface | |
| CN111534270B (en) | Laser stripping material and preparation method and application thereof | |
| CN110524977B (en) | Porous polytetrafluoroethylene copper-clad plate and preparation method thereof | |
| CN105622975B (en) | A kind of preparation method of super-hydrophobic dielectric material and its dielectric material of preparation | |
| WO2009153991A1 (en) | Cushioning sheet and process for producing the same | |
| CN112812698A (en) | Method for manufacturing polytetrafluoroethylene organic silicon pressure-sensitive adhesive tape | |
| CN209447937U (en) | Full fluorin proton exchange film notacoria | |
| Chen et al. | Effect of solvent on the energy storage property of poly (vinylidene fluoride-hexafluoropropylene) | |
| CN113774651A (en) | Surface modification method for liquid crystal polymer material | |
| CN113304622A (en) | POSS/PVDF composite membrane with hydrophobic surface, preparation method and application thereof | |
| CN105885081A (en) | Plasma modification method for polytetrafluoroethylene microporous membrane | |
| CN112770489A (en) | Teflon double-sided copper-clad plate and preparation method thereof | |
| CN116162275A (en) | Polyimide composite film and preparation method and application thereof | |
| CN111112027A (en) | Method for enhancing adhesion of super-hydrophilic coating to polymer surface | |
| CN114958070B (en) | Film stripping liquid and film stripping method for removing fluorine-containing resin film without damaging substrate |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |