CN114566126B - display panel - Google Patents
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- CN114566126B CN114566126B CN202210228599.9A CN202210228599A CN114566126B CN 114566126 B CN114566126 B CN 114566126B CN 202210228599 A CN202210228599 A CN 202210228599A CN 114566126 B CN114566126 B CN 114566126B
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- amplifying transistor
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
- G09G3/3208—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED]
- G09G3/3225—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED] organic, e.g. using organic light-emitting diodes [OLED] using an active matrix
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2320/00—Control of display operating conditions
- G09G2320/02—Improving the quality of display appearance
- G09G2320/0233—Improving the luminance or brightness uniformity across the screen
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
- Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Electroluminescent Light Sources (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The application provides a display panel which comprises a light emitting element, a photosensitive element, a capacitor, a first switching transistor, a first amplifying transistor and a second amplifying transistor, wherein the light emitting element is connected between a first power line and a second power line in series, the photosensitive element is connected between the second power line and a third power line in parallel after being connected with the capacitor in parallel, the first switching transistor is connected between the third power line and the parallel photosensitive element and the capacitor in series, the grid electrode of the first amplifying transistor is respectively connected with the photosensitive element, the capacitor and the first switching transistor, the drain electrode of the first amplifying transistor is connected with the third power line, the source electrode of the first amplifying transistor is connected with the grid electrode of the second amplifying transistor, and the drain electrode of the second amplifying transistor is connected with the third power line. The sensing circuit in the display panel can accurately sense the OLED brightness, and quick compensation or calibration of the OLED brightness is realized.
Description
Technical Field
The application relates to the technical field of display, in particular to a display panel.
Background
AMOLED (Active-matrix organic light-emitting diode, active matrix organic light emitting diode or Active matrix organic light emitting diode) causes IR Drop (voltage Drop) or Vth (threshold voltage) drift due to the process, design, material and other reasons, and the module looks locally uneven after being lighted, called mura (mother pull). The existing most commonly used de-mura scheme is to collect the brightness of each pixel by using a CCD (charge-coupled device) lens, compare the brightness with the standard design brightness, calculate a compensation value, and initialize again by an input signal to finish the de-mura. The scheme is only suitable for calibration before delivery, and is only suitable for consumer electronic products with lower service lives, such as mobile phones, watches and the like. Another solution is to use products with long life requirements, such as televisions, vehicle-mounted displays, etc., and typically a sensing circuit is provided to sense the driving current through an OLED (Organic Electroluminescence Display, organic light emitting semiconductor) or TFT (Thin Film Transistor ), and further to derive the brightness of the OLED, and to obtain a feedback signal according to an algorithm to compensate, but this solution has the disadvantage that the current of the OLED is sensed instead of the brightness of the OLED; when the OLED material decays, sensing only the current is inaccurate.
Disclosure of Invention
The application provides a display panel comprising a sensing circuit, wherein the sensing circuit is used for sensing the brightness of a light-emitting element so as to realize rapid compensation or calibration of the brightness of the light-emitting element, and the problem of inaccurate compensation caused by material attenuation of the light-emitting element when the brightness of the light-emitting element is compensated by sensing the current of the light-emitting element in the traditional scheme is solved.
In order to solve the problems, the technical scheme provided by the application is as follows:
an embodiment of the present application provides a display panel including:
a light emitting element, a light sensing element, a capacitor, a first switching transistor, a first amplifying transistor, and a second amplifying transistor;
the light-emitting element is connected in series between a first power line and a second power line, the photosensitive element and the capacitor are connected in parallel and then connected in series between the second power line and a third power line, and the first switch transistor is connected in series between the third power line and the photosensitive element and the capacitor which are connected in parallel;
the grid electrode of the first amplifying transistor is respectively connected with the photosensitive element, the capacitor and the first switching transistor, the drain electrode of the first amplifying transistor is connected with the third power line, the source electrode of the first amplifying transistor is connected with the grid electrode of the second amplifying transistor, and the drain electrode of the second amplifying transistor is connected with the third power line.
The display panel provided by the embodiment of the application further comprises a second switch transistor, wherein the second switch transistor is connected in series between the first amplifying transistor and the second amplifying transistor.
The display panel provided by the embodiment of the application further comprises a third amplifying transistor, a fourth amplifying transistor and a fifth amplifying transistor, wherein drain electrodes of the third amplifying transistor, the fourth amplifying transistor and the fifth amplifying transistor are all connected to the third power line, a grid electrode of the third amplifying transistor is connected to a source electrode of the second amplifying transistor, a grid electrode of the fourth amplifying transistor is connected to a source electrode of the third amplifying transistor, and a grid electrode of the fifth amplifying transistor is connected to a source electrode of the fourth amplifying transistor.
In the display panel provided by the embodiment of the application, the sources of the second amplifying transistor, the third amplifying transistor, the fourth amplifying transistor and the fifth amplifying transistor are respectively connected with the fourth power line through a reset transistor.
The display panel provided by the embodiment of the application comprises a light emitting element, a photosensitive element, a capacitor, a first amplifying transistor and a second amplifying transistor;
the capacitor is used for providing voltages for the photosensitive element and the grid electrode of the first amplifying transistor;
the photosensitive element is used for sensing the brightness of the light-emitting element to generate an electric signal and transmitting the electric signal to the grid electrode of the first amplifying transistor;
the first amplifying transistor generates and outputs a first amplifying signal to the grid electrode of the second amplifying transistor according to the electric signal;
the second amplifying transistor generates and outputs a second amplifying signal according to the first amplifying signal;
wherein the first amplifying transistor and the second amplifying transistor both operate in a saturation region.
The display panel provided by the embodiment of the application comprises:
a substrate;
a TFT layer disposed on the substrate;
a flat layer disposed on the TFT layer;
a pixel electrode layer disposed on the planarization layer;
a pixel defining layer disposed on the pixel electrode layer;
the photosensitive element is positioned on the pixel defining layer and is close to the light emitting element.
In the display panel provided by the embodiment of the application, the pixel definition layer is further provided with the columnar spacer, and the height of the columnar spacer is greater than that of the photosensitive element.
In the display panel provided by the embodiment of the application, the TFT layer comprises the first amplifying transistor, the pixel electrode layer comprises the anode of the light emitting element and a connecting part, and the photosensitive element is electrically connected to the gate of the first amplifying transistor through the connecting part.
The display panel provided by the embodiment of the application comprises:
a substrate;
a TFT layer disposed on the substrate;
a flat layer disposed on the TFT layer;
a pixel electrode layer disposed on the planarization layer;
a pixel defining layer disposed on the pixel electrode layer;
the photosensitive device and the flat layer are arranged in the same layer.
According to the display panel provided by the embodiment of the application, the flat layer comprises the first flat layer and the second flat layer, the photosensitive device and the first flat layer are arranged on the same layer, the second flat layer is arranged on the first flat layer, and an ultraviolet filter film is arranged between the first flat layer and the second flat layer.
The beneficial effects of the application are as follows: in the display panel provided by the embodiment of the application, the capacitor is used for providing voltages for the photosensitive element and the grid electrode of the first amplifying transistor, the photosensitive element is used for sensing the brightness of the light emitting element to generate an electric signal, and the electric signal is transmitted to the grid electrode of the first amplifying transistor, so that the first amplifying transistor and the second amplifying transistor work in a saturation region, and the electric signal is amplified, thereby realizing quick compensation or calibration of the brightness of the light emitting element.
Drawings
In order to more clearly illustrate the embodiments or the technical solutions in the prior art, the following description will briefly introduce the drawings that are needed in the embodiments or the description of the prior art, it is obvious that the drawings in the following description are only some embodiments of the application, and that other drawings can be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic diagram of a first sensing circuit according to an embodiment of the present application;
FIG. 2 is a schematic diagram of a second sensing circuit according to an embodiment of the present application;
fig. 3 is a schematic diagram of a first pixel structure according to an embodiment of the present application;
fig. 4 is a schematic diagram of a second pixel structure according to an embodiment of the application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to be within the scope of the application.
Although the terms "first," "second," "third," etc. may be used herein to describe various elements, these elements should not be limited by these terms.
The embodiment of the application provides a display panel, which comprises a light emitting element, a photosensitive element, a capacitor C and a first amplifying transistor T A And a second amplifying transistor T B The capacitor C is used for providing the photosensitive element and the first amplifying transistor T A Gate electrode lift of (C)A voltage supply, the photosensitive element is used for sensing the brightness of the light emitting element to generate an electric signal and transmitting the electric signal to the first amplifying transistor T A A gate of the first amplifying transistor T A Generating and outputting a first amplified signal to the second amplifying transistor T according to the electric signal B A gate of the second amplifying transistor T B Generating and outputting a second amplified signal based on the first amplified signal, wherein the first and second amplifying transistors TA and T B All operate in the saturation region.
The display panel provided in the above embodiment may be implemented by a circuit as shown in fig. 1, and specifically includes a pixel circuit and a sensing circuit.
Wherein the pixel circuit comprises a light emitting element and a third switching transistor T 0 First power line V dd And a second power supply line V ss The light-emitting element and the third switching transistor T 0 Commonly connected in series to the first power line V dd And a second power supply line V ss Between the first power supply line V dd And the second power supply line V ss For providing a first power supply voltage and a second power supply voltage, respectively, the Light Emitting element is an OLED (Organic Light-Emitting diode), and the third switching transistor T 0 And the first power line V dd A source electrode of the third switching transistor T0 is connected with an anode electrode of the OLED, a cathode electrode of the OLED is connected with the second power line Vss, and the third switching transistor T 0 A gate connected to a third control signal line for controlling the third switching transistor T 0 Is turned on and off.
The sensing circuit comprises a photosensitive element, a capacitor C, a first switch transistor T1 and a first amplifying transistor T A And a second amplifying transistor T B In this embodiment, the photosensitive element is a photodiode for sensing the light emitting brightness of the OLED, and the photodiode is typically an amorphous silicon-based photodiode PD (Photo-Diode), and the Photo-Diode isThe anode of the electrode tube PD is ITO (Indium Tin Oxide) or AZO/ITO (AZO is an aluminum doped ZnO film), the photosensitive layer is of a structure of P-Si, I-Si and N-Si, and the cathode of the photosensitive diode PD is Mo/Al, ti/Al or ITO/Ag, and the like, so that a high-reflectivity layer is formed.
In other embodiments, the photodiode may be an organic photodiode OPD (Organic Photo Diode ), the anode material is the same as that of the amorphous silicon-based photodiode, and the active layer and the electron transport layer may be vapor deposited or may be fabricated by a solution method.
The photodiode PD and the capacitor C are connected in parallel and then connected in series with the second power line V ss And a third power line V bias The cathode of the photodiode PD is used as a first end point, and the anode of the photodiode PD is used as a second end point, namely the first end point and the third power line V bias The second end point is connected with the second power line V ss Connected with the capacitor C through the first switch transistor T 1 Receiving a third power line V bias In particular, the first switching transistor T 1 Is connected in series with the third power line V bias And between the photosensitive element and the capacitor C after parallel connection, i.e. the first switching transistor T 1 And the third power line V bias A source of the first switching transistor T1 is connected with the first terminal, and the first switching transistor T 1 A gate connected to a first control signal line for controlling the first switching transistor T 1 Is turned on and off.
The first amplifying transistor T A Gate electrodes of the capacitor C and the first switch transistor T are respectively connected with the photosensitive element 1 Connection, i.e. of said first amplifying transistor T A Gate of the first switch transistor T and the first terminal 1 The source electrode of the first amplifying transistor T A And the third power line V bias Connection ofThe first amplifying transistor T A Is connected as a first output to the second amplifying transistor T B A gate of the second amplifying transistor T B And the third power line V bias Connected with the second amplifying transistor T B In this embodiment, the second output terminal is connected to the external compensation circuit.
The workflow of the sensing circuit can be divided into the following phases according to the light emitting state of the OLED:
in a first stage, the OLED does not emit light, i.e. the third control signal controls the third switching transistor T 0 Turn off the first control signal line to control the first switch transistor T 1 On, at this time, due to the first switching transistor T 1 Conducting, the third power line V bias Providing the third power supply voltage to one end of the capacitor C, the cathode of the photodiode PD, the first amplifying transistor T A The gate of the first amplifying transistor T A And the second amplifying transistor T B By controlling the third power supply voltage, the first amplifying transistor T A And the second amplifying transistor T B Operating in the saturation region, in particular, the third supply voltage fulfils the following conditions:
V ds ＞V gs -V th ＞0
V ds v is the voltage between the drain and source of the transistor gs V is the voltage between the gate and source of the transistor th Is the threshold voltage of the transistor.
Due to the anode of the photodiode PD and the other end of the capacitor C and the second power line V ss Is connected with the second power line V ss Providing the second power supply voltage to the anode of the photodiode PD and the other end of the capacitor C, so that the capacitor C starts to charge under the action of the second power supply voltage and the third power supply voltage, the photodiode PD works in a negative pressure area, and the first amplifying crystalTube T A The first amplifying transistor T is turned on under the action of the third power supply voltage A Is used as the source of the first output end to output the first amplified signal to the second amplifying transistor T B The first amplified signal includes a first output current I 1 And a first output voltage V out1 The second amplifying transistor T B At the first output voltage V out1 Under the action, the second amplifying transistor T is made B On due to the second amplifying transistor T B And the third power line V bias Is connected with the second amplifying transistor T B The source of the second output terminal outputs a second amplified signal including a second output current I 2 And a second output voltage V out2 。
A second stage, wherein the third control signal line controls the third switching transistor T 0 The OLED emits light under the action of the first power supply voltage and the second power supply voltage, and the first control signal line outputs a first control signal to enable the first switch transistor T 1 Turning off, at this time, the photodiode PD senses the brightness of the OLED, generating photocurrent I 0 Discharging the capacitor C, the first amplifying transistor T A The voltage of the grid electrode of the capacitor C is the voltage of the third power supply voltage V bias When the capacitor C passes a period of time t o The voltage drop across the capacitor C is DeltaV, at which time the voltage across the capacitor C and the first amplifying transistor T A Is of gate voltage V bias +DeltaV due to the first amplifying transistor T A Operating in a saturation region such that the magnitude of the first output current is related only to the gate voltage of the first transistor, and thus the first amplifying transistor T A A change in the gate voltage of (a) will result in a pass through the first amplifying transistor T A The current variation of (1) is I 1 +ΔI 1 Said ΔI 1 At t 0 Within the time period said I 1 Through the first amplifying crystalBody tube T A Voltage variation of (2) is V out1 +ΔV out1 Said DeltaV out1 At t 0 For the time period of V out1 The variation of the first output current I outputted by the first output end 1 Change to I 1 +ΔI 1 The first output voltage V out1 Change to V out1 +ΔV out1 The first output current I 1 Is of the magnification of DeltaI 1 /I 0 The amplification factor of the first output voltage is DeltaV out1 /DeltaV. Similarly, due to the second amplifying transistor T B Operating in the saturation region and a change in the first output voltage resulting in a second output current I at the second output 2 Change to I 2 +ΔI 2 The second output voltage is changed to V out2 +ΔV out2 The second output current I 2 Is of the magnification of DeltaI 2 /I 1 The amplification factor of the first output voltage is DeltaV out2 /ΔV out1 Photocurrent I 0 The total amplification of the current is delta I 2 /I 0 ＝β。
By setting the first amplifying transistor T A For the photocurrent I 0 Performing a first amplification and said second amplifying transistor T B Photo current I 0 Performing secondary amplification to make the OLED more sensitive to brightness sensing, i.e. small photocurrent I 0 Is easier to identify after amplification, and at the same time, the longer the discharging time of the capacitor C is, the larger the voltage change at the two ends of the capacitor C is, namely the first amplifying transistor T is A The larger the gate voltage variation of (C) is, the first output voltage V out1 The larger is, the second amplifying transistor T is added B After that, the amplification factor is increased so that the required original signal can be smaller, i.e. the first amplifying transistor T is required A The gate voltage variation of (C) is smaller, that is, the discharge time of the capacitor C can be shortened, so that the rapid compensation of the OLED brightness can be realized.
In an embodiment of the present application, the first amplifying transistor T A A second switch transistor T is connected in series with the first output end 2 The second switching transistor T 2 Is connected with the drain of the first amplifying transistor T A Is connected with the source of the second switching transistor T 2 Source of (d) and the second amplifying transistor T B Gate connection of the second switching transistor T 2 The gate of the second switch transistor T is connected to a second control signal line for providing a second control signal for controlling the second switch transistor T 2 Is turned on and off by the second switching transistor T 2 The first output terminal and the second amplifying transistor T can be controlled B Is turned on and off between the gates of (c).
The sensing circuit provided in the above embodiment is only an example, and may actually increase multi-stage amplification according to the requirement, as shown in fig. 2, the above sensing circuit further includes drain electrodes all connected to the third power line V bias Third amplifying transistor T of (2) C Fourth amplifying transistor T D And a fifth amplifying transistor T E The third amplifying transistor T C A gate connected to the second output terminal, a third amplifying transistor T C Is connected as a third output to the fourth amplifying transistor T D A gate of the fourth amplifying transistor T D Is connected as a fourth output to the fifth amplifying transistor T E A gate of the fifth amplifying transistor T E The source of (c) is connected as a fifth output to the external compensation circuit. By arranging the multi-stage amplifying circuit, the amplification factor is further increased, and the required original signal is smaller, namely the required first amplifying transistor T A The variation of the grid voltage is smaller, the discharge time of the capacitor C can be further shortened, and the quick compensation of the OLED brightness is realized.
The fifth-stage amplifying circuit provided by the above embodiment, the second amplifying transistor T B The third amplifying transistor T C The fourth amplifying transistor T D And the fifth amplifying transistor T E Respectively through a reset crystalThe tube is connected to the fourth power supply line GND.
Specifically, the first amplifying transistor T A Is connected in series with the second amplifying transistor T between the source of the fourth power line GND B A first reset transistor T with parallel gates a The second amplifying transistor T B Is connected in series with the third amplifying transistor T between the source of the fourth power line GND C A second reset transistor T connected in parallel with the gate of the transistor T b As the third amplifying transistor T C Is connected in series with the fourth amplifying transistor T between the source of the fourth power line GND D A third reset transistor T with parallel gates c As said fourth amplifying transistor T D Is connected in series with the fifth amplifying transistor T between the source of the fourth power line GND E A fourth reset transistor T connected in parallel with the gate of the transistor T d As the fifth amplifying transistor T E A fifth reset transistor T connected in parallel with the external compensation circuit is connected in series between the source of the fourth power line GND f 。
In the above embodiment, the first reset transistor Ta and the second reset transistor T b The third reset transistor T c The fourth reset transistor T d And the fifth reset transistor T f Are connected in parallel.
Specifically, the first reset transistor T a And the drain of the second amplifying transistor T B Is connected in parallel to the gate of the first amplifying transistor T A A source of the first reset transistor T a The source of the first reset transistor T is connected with the fourth power line GND a A gate electrode of the second reset transistor T is connected to a first reset signal line b And the drain of the third amplifying transistor T C Is connected in parallel to the gate of the second amplifying transistor T B A source of the second reset transistor T b Source of (d) and the first reset transistor T a The source of the second reset transistor T is connected to the fourth power line GND in parallel b Is connected to the second complexBit signal line, the third reset transistor T c And the fourth amplifying transistor T D Is connected in parallel to the gate of the third amplifying transistor T C A source of the third reset transistor T c Source of (d) and the second reset transistor T b The source of the third reset transistor T is connected to the fourth power line GND in parallel c A gate of the fourth reset transistor T is connected to a third reset signal line d And the drain of the fifth amplifying transistor T E Is connected in parallel to the gate of the fourth amplifying transistor T D A source of the fourth reset transistor T d Source of (d) and the third reset transistor T c The source of the fourth reset transistor T is connected in parallel to the fourth power line GND d A gate of the fifth reset transistor Tf is connected to the fourth reset signal line, and a drain of the fifth reset transistor Tf is connected in parallel with the external compensation circuit to the fifth amplifying transistor T E A source of the fifth reset transistor T f Source of (d) and the fourth reset transistor T d The source of the fifth reset transistor T is connected in parallel to the fourth power line GND f Is connected to the fifth reset signal line.
In this embodiment, the fourth power line GND is a ground line, and the first reset transistor T is controlled by the first reset signal line, the second reset signal line, the third reset signal line, the fourth reset signal line, and the fifth reset signal line, respectively a The second reset transistor T b The third reset transistor T c The fourth reset transistor T d And the fifth reset transistor T f The first output end, the second output end, the third output end, the fourth output end and the second output end are reset according to the turn-off and turn-on of the first output end, the second output end, the third output end, the fourth output end and the second output end.
As shown in fig. 3, the display panel according to the above embodiment includes the following structure: a substrate 1, a TFT layer 2, a flat layer 3, a pixel electrode layer 4 and a pixel definition layer 5, wherein the TFT layer 2 is disposed on the substrate 1, the flat layer 3 is disposed on the TFT layer 2, and the pixel is electrically connected to the pixelA pole layer 4 is disposed on the flat layer 3, and the pixel defining layer 5 is disposed on the pixel electrode layer 4. Wherein the photodiode 6 in the above embodiment may be located on the pixel defining layer 5 and close to the light emitting element, at this time, a columnar spacer (not shown in the figure) is further disposed on the pixel defining layer 5, the height of the columnar spacer is greater than the height of the light emitting element, and the TFT layer 2 includes the first amplifying transistor T A The pixel electrode layer 4 includes an anode of the OLED and a connection portion, and the photodiode 6 is electrically connected to the first amplifying transistor T via the connection portion A Is provided.
As shown in fig. 4, the photodiode 6 in the above embodiment may be further disposed on the same layer as the planarization layer 3, specifically, the planarization layer 3 includes a first planarization layer 31 and a second planarization layer 32, the first planarization layer 31 is disposed on the TFT layer 2, the photodiode 6 is disposed on the same layer as the first planarization layer 31, and the second planarization layer 32 is disposed on the first planarization layer 31 and the photodiode 6. In order to prevent ultraviolet aging of the photodiode 6, an ultraviolet filter film is further disposed on the photodiode 6, that is, the ultraviolet filter film is disposed between the first planarization layer 31 and the second planarization layer 32.
The application provides a display panel comprising a sensing circuit, wherein the sensing circuit is used for sensing OLED brightness so as to realize quick compensation or calibration of the OLED brightness, and the problem that the compensation is inaccurate due to the attenuation of an OLED material when the OLED brightness is compensated by sensing OLED current in the traditional scheme is solved.
In summary, although the present application has been described in terms of the preferred embodiments, the preferred embodiments are not limited to the above embodiments, and various modifications and changes can be made by one skilled in the art without departing from the spirit and scope of the application, and the scope of the application is defined by the appended claims.
Claims (10)
1. A display panel, comprising:
a light emitting element, a light sensing element, a capacitor, a first switching transistor, a first amplifying transistor, and a second amplifying transistor;
the light-emitting element is connected in series between a first power line and a second power line, the photosensitive element and the capacitor are connected in parallel and then connected in series between the second power line and a third power line, and the first switch transistor is connected in series between the third power line and the photosensitive element and the capacitor which are connected in parallel;
the grid electrode of the first amplifying transistor is respectively connected with the photosensitive element, the capacitor and the first switching transistor, the drain electrode of the first amplifying transistor is connected with the third power line, the source electrode of the first amplifying transistor is connected with the grid electrode of the second amplifying transistor, and the drain electrode of the second amplifying transistor is connected with the third power line.
2. The display panel of claim 1, further comprising a second switching transistor connected in series between the first and second amplifying transistors.
3. The display panel according to any one of claims 1 or 2, further comprising a third amplifying transistor, a fourth amplifying transistor, and a fifth amplifying transistor each having a drain connected to the third power supply line, wherein a gate of the third amplifying transistor is connected to a source of the second amplifying transistor, a gate of the fourth amplifying transistor is connected to a source of the third amplifying transistor, and a gate of the fifth amplifying transistor is connected to a source of the fourth amplifying transistor.
4. A display panel according to claim 3, wherein sources of the second amplifying transistor, the third amplifying transistor, the fourth amplifying transistor and the fifth amplifying transistor are connected to a fourth power line through a reset transistor, respectively.
5. A display panel is characterized by comprising a light emitting element, a photosensitive element, a capacitor, a first amplifying transistor and a second amplifying transistor;
the capacitor is used for providing voltages for the photosensitive element and the grid electrode of the first amplifying transistor;
the photosensitive element is used for sensing the brightness of the light-emitting element to generate an electric signal and transmitting the electric signal to the grid electrode of the first amplifying transistor;
the first amplifying transistor generates and outputs a first amplifying signal to the grid electrode of the second amplifying transistor according to the electric signal;
the second amplifying transistor generates and outputs a second amplifying signal according to the first amplifying signal;
wherein the first amplifying transistor and the second amplifying transistor both operate in a saturation region;
the light-emitting element is connected in series between a first power line and a second power line, the photosensitive element and the capacitor are connected in parallel and then connected in series between the second power line and a third power line, and the first switch transistor is connected in series between the third power line and the photosensitive element and the capacitor which are connected in parallel;
the grid electrode of the first amplifying transistor is respectively connected with the photosensitive element, the capacitor and the first switching transistor, the drain electrode of the first amplifying transistor is connected with the third power line, the source electrode of the first amplifying transistor is connected with the grid electrode of the second amplifying transistor, and the drain electrode of the second amplifying transistor is connected with the third power line.
6. The display panel of claim 5, comprising:
a substrate;
a TFT layer disposed on the substrate;
a flat layer disposed on the TFT layer;
a pixel electrode layer disposed on the planarization layer;
a pixel defining layer disposed on the pixel electrode layer;
the photosensitive element is positioned on the pixel defining layer and is close to the light emitting element.
7. The display panel of claim 6, wherein the pixel defining layer further has a columnar spacer disposed thereon, the columnar spacer having a height greater than a height of the photosensitive element.
8. The display panel according to claim 6, wherein the TFT layer includes the first amplifying transistor, wherein the pixel electrode layer includes an anode of the light emitting element and a connection portion, and wherein the light sensing element is electrically connected to the gate of the first amplifying transistor through the connection portion.
9. The display panel of claim 5, comprising:
a substrate;
a TFT layer disposed on the substrate;
a flat layer disposed on the TFT layer;
a pixel electrode layer disposed on the planarization layer;
a pixel defining layer disposed on the pixel electrode layer;
the photosensitive element is arranged on the same layer as the flat layer.
10. The display panel according to claim 9, wherein the planarization layer includes a first planarization layer and a second planarization layer, the photosensitive element is disposed on the same layer as the first planarization layer, the second planarization layer is disposed on the first planarization layer, and an ultraviolet filter film is disposed between the first planarization layer and the second planarization layer.
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