CN114520633A - Doherty power amplifier based on small-sized orthogonal signal generator - Google Patents

Doherty power amplifier based on small-sized orthogonal signal generator Download PDF

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CN114520633A
CN114520633A CN202210089555.2A CN202210089555A CN114520633A CN 114520633 A CN114520633 A CN 114520633A CN 202210089555 A CN202210089555 A CN 202210089555A CN 114520633 A CN114520633 A CN 114520633A
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quadrant
segment
fracture
metal layer
path
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李斯
贾浩阳
李俊
王彦杰
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South China University of Technology SCUT
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South China University of Technology SCUT
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F30/00—Fixed transformers not covered by group H01F19/00
    • H01F30/02—Auto-transformers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Power Engineering (AREA)
  • Amplifiers (AREA)

Abstract

The invention discloses a Doherty power amplifier based on a small-sized orthogonal signal generator, relates to a microelectronic circuit, and aims to solve the problem of miniaturization of the orthogonal signal generator. The orthogonal signal generator comprises four layers of metals which are sequentially stacked from top to bottom: the second metal layer forms an I-path differential signal output circuit with an annular structure, and a fracture is formed for line segments which are in cross interference in the same plane to pass through; the third metal layer forms a Q-path differential signal output circuit with an annular structure, and a fracture is formed for the crossed and interfered line segments in the same plane to pass through; the first metal layer and the fourth metal layer are provided with a plurality of cross-line segments for connecting two ends of each fracture; the annular structure of the third metal layer is superposed with the annular structure of the second metal layer in the vertical direction, and each cross line segment of the first metal layer is superposed with the cross line segment of the fourth metal layer in the vertical direction. The transformer has the advantages that the area is reduced by a half, the coupling coefficient of the transformer is increased, and the loss is reduced.

Description

Doherty power amplifier based on small-sized orthogonal signal generator
Technical Field
The invention relates to microelectronic circuits, in particular to a Doherty power amplifier based on a small-sized quadrature signal generator.
Background
The power amplifier is usually the most power consuming module in the wireless transceiver, and its performance basically determines the energy efficiency and linearity of the whole wireless transmitter system. With the development of wireless communication technology, people utilize abundant millimeter wave spectrum resources to realize high data rate of wireless systems. In order to obtain a larger data transmission rate, high-order orthogonal frequency division multiplexing, quadrature amplitude modulation, and the like are generally used. However, the resulting high peak-to-average power ratio places stringent requirements on the power back-off efficiency of the power amplifier, as well as high linearity requirements over a wide power range of its amplitude and phase response, to ensure undistorted transmission of the signal. The power amplifier is one of the most important modules in the front end of a wireless communication system, and the efficiency of the power back-off greatly affects the efficiency of the system. Among various power back-off efficiency enhancement techniques, the Doherty technique is considered as one of the most promising options, which supports wideband modulation in 5G applications, and improves power back-off efficiency through active load modulation via a co-design of a main power amplifier and a sub-power amplifier. In order to meet the requirements of a 5G communication system such as low time delay and large bandwidth, millimeter wave and terahertz technologies are widely applied, and therefore the interconnection of everything is achieved.
On the premise of ensuring basic indexes such as output power, efficiency, linearity and the like, the area of the Doherty power amplifier is always a serious difficulty in power amplifier design. In order to apply the Doherty power amplifier to a system, miniaturization of the Doherty power amplifier is imperative. In the last decade, a silicon-based millimeter wave Doherty power amplifier has made a great progress, and a quadrature signal generating circuit at an input end of the silicon-based millimeter wave Doherty power amplifier generally adopts structures such as an 1/4-wavelength transmission line, a lange coupler, a polyphase filter and the like, and the structures all occupy a large chip area, so that the chip area of the overall Doherty power amplifier is large. How to realize the miniaturized quadrature signal generator has important significance for the miniaturization of the Doherty power amplifier.
Disclosure of Invention
The present invention is directed to a Doherty power amplifier based on a small-sized quadrature signal generator, so as to solve the above problems in the prior art.
According to the Doherty power amplifier based on the small-sized orthogonal signal generator, an I path differential signal of the orthogonal signal generator enters an I path input of an output power synthesizer after being amplified by a main path, a Q path differential signal enters a Q path input after being amplified by a secondary path, and the I path differential signal and the Q path differential signal after being amplified are synthesized by the output power synthesizer and output outwards;
orthogonal signal generator from top to bottom stack gradually first metal level, second metal level, third metal level and fourth metal level constitute, wherein first metal level and second metal level electric connection, second metal level and third metal level insulated connection, third metal level and fourth metal level electric connection:
the second metal layer forms an I-path differential signal output circuit with an annular structure, and a fracture is formed for line segments which are intersected and interfered in the same plane to pass through;
the third metal layer forms a Q-path differential signal output circuit with an annular structure, and a fracture is formed for line segments which are mutually interfered in the same plane to pass through;
the first metal layer is provided with a plurality of cross line segments for correspondingly connecting two ends of each fracture of the second metal layer one by one;
the fourth metal layer is provided with a plurality of cross-line segments for correspondingly connecting two ends of each fracture of the third metal layer one by one;
the annular structure of the third metal layer is superposed with the annular structure of the second metal layer in the vertical direction, and each cross line segment of the first metal layer is superposed with the cross line segment of the fourth metal layer in the vertical direction.
The I-path differential signal lines are partially overlapped in the middle of the orthogonal signal generator.
The I-path differential signal circuit is in a 1.5-circle annular structure.
The second metal layer comprises a first I route segment positioned at the outer ring of the first quadrant, a second I route segment extending from the middle ring of the fourth quadrant to the inner ring of the second quadrant through the inner ring of the third quadrant, a third I route segment extending from the middle ring of the first quadrant to the outer ring of the fourth quadrant, a fourth I route segment extending from the outer ring of the second quadrant to the middle ring of the third quadrant, a fifth I route segment extending from the middle ring of the second quadrant to the inner ring of the fourth quadrant through the inner ring of the first quadrant, and a sixth I route segment positioned at the outer ring of the third quadrant; a first I-path output lead extends from the end part of the first I-path section far away from the first input lead, and a first top layer fracture is formed between the end part of the first I-path output lead far away from the first I-path output lead and the end part of the second I-path section located in the fourth quadrant; a second top layer fracture is formed between the end part of the fifth I-shaped line section positioned in the fourth quadrant and the end part of the fourth I-shaped line section positioned in the third quadrant, and a second I-shaped output lead extends from the end part of the fourth I-shaped line section positioned in the first quadrant; a second input lead extends from the end part, far away from the second I-path output lead, of the sixth I-path section, and a third top layer fracture is formed between the end part, far away from the second input lead, of the sixth I-path section and the end part, located in the second quadrant, of the fifth I-path section; a first input lead extends from the end part of the third I route section, which is far away from the first I route output lead, and a fourth top layer fracture is formed between the end part of the third I route section, which is far away from the first input lead, and the end part of the second I route section, which is located in the second quadrant;
the first metal layer comprises a first top layer cross-line segment for connecting the first top layer fracture, a second top layer cross-line segment for connecting the second top layer fracture, a third top layer cross-line segment for connecting the third top layer fracture and a fourth top layer cross-line segment for connecting the fourth top layer fracture;
the third metal layer comprises a first Q route segment positioned at the outer ring of the first quadrant, a second Q route segment extending from the middle ring of the fourth quadrant to the inner ring of the second quadrant through the inner ring of the third quadrant, a third Q route segment extending from the middle ring of the first quadrant to the outer ring of the fourth quadrant, a fourth Q route segment extending from the outer ring of the second quadrant to the middle ring of the third quadrant, a fifth Q route segment extending from the middle ring of the second quadrant to the inner ring of the fourth quadrant through the inner ring of the first quadrant, and a sixth Q route segment positioned at the outer ring of the third quadrant; a first isolation lead extends from the end part of the first Q route section, which is far away from the first Q route output lead, and a first bottom fracture is formed between the end part of the first isolation lead, which is far away from the first isolation lead, and the end part of the second Q route section, which is located in the fourth quadrant; a second bottom layer fracture is formed between the end part of the fifth Q route section positioned in the fourth quadrant and the end part of the fourth Q route section positioned in the third quadrant, and a second isolation lead extends from the end part of the fourth Q route section positioned in the first quadrant; a second Q-way output lead extends from the end part of the sixth Q-way line section, which is far away from the second isolation lead, and a third bottom fracture is formed between the end part of the sixth Q-way output lead, which is far away from the second Q-way output lead, and the end part of the fifth Q-way line section, which is located in the second quadrant; a first Q-path output lead extends from the end part of the third Q-path section, which is far away from the first isolation lead, and a fourth bottom fracture is formed between the end part of the third Q-path section, which is far away from the first Q-path output lead, and the end part of the second Q-path section, which is located in the second quadrant;
the fourth metal layer comprises a first bottom layer cross-line segment for connecting the first bottom layer fracture, a second bottom layer cross-line segment for connecting the second bottom layer fracture, a third bottom layer cross-line segment for connecting the third bottom layer fracture, and a fourth bottom layer cross-line segment for connecting the fourth bottom layer fracture.
The Doherty power amplifier based on the small-sized orthogonal signal generator has the advantages that the top four layers of metal are distributed in the process, two transformers are reasonably distributed into the area of one transformer, the area is reduced by half, the coupling coefficient of the transformer is increased, and the loss is reduced. The signals are passed by magnetic coupling and output phase quadrature is achieved.
Drawings
Fig. 1 is a schematic diagram of the Doherty power amplifier of the invention;
fig. 2 is a perspective view showing the structure of the quadrature signal generator according to the present invention;
fig. 3 is a front view of a quadrature signal generator according to the present invention;
FIG. 4 is a schematic diagram of a first metal layer of the quadrature signal generator according to the present invention;
FIG. 5 is a schematic diagram of a second metal layer of the quadrature signal generator according to the present invention;
FIG. 6 is a schematic diagram of a third metal layer of the quadrature signal generator according to the present invention;
FIG. 7 is a diagram of a fourth metal layer of the quadrature signal generator according to the present invention;
fig. 8 is an equivalent circuit diagram of the quadrature signal generator according to the present invention;
fig. 9 is a gain characteristic diagram of the quadrature signal generator according to the present invention;
fig. 10 is a phase characteristic diagram of the quadrature signal generator according to the present invention;
FIG. 11 is a small signal S parameter simulation plot for the quadrature signal generator of the present invention;
FIG. 12 is a graph of a large signal simulation of the quadrature signal generator of the present invention;
fig. 13 is a graph showing a simulation of an output power back-off of the quadrature signal generator according to the present invention;
FIG. 14 is a first simulation plot of a Monte Carlo for a quadrature signal generator according to the present invention;
FIG. 15 is a graph of a Monte Carlo simulation of the quadrature signal generator of the present invention;
fig. 16 is a graph of a monte carlo simulation of the quadrature signal generator of the present invention.
Reference numerals:
100-first metal layer: 110-a first top-level cross-line segment, 120-a second top-level cross-line segment, 130-a third top-level cross-line segment, 140-a fourth top-level cross-line segment;
200-second metal layer: 210-a first I route segment, 211-a first I route output lead, 220-a second I route segment, 230-a third I route segment, 231-a first input lead, 240-a fourth I route segment, 241-a second I route output lead, 250-a fifth I route segment, 260-a sixth I route segment, 261-a second input lead;
300-third metal layer: 310-a first Q route segment, 311-a first isolation lead, 320-a second Q route segment, 330-a third Q route segment, 331-a first Q route output lead, 340-a fourth Q route segment, 341-a second isolation lead, 350-a fifth Q route segment, 360-a sixth Q route segment, 361-a second Q route output lead;
400-fourth metal layer: 410-a first bottom layer cross-line segment, 420-a second bottom layer cross-line segment, 430-a third bottom layer cross-line segment, 140-a fourth bottom layer cross-line segment;
IN-is a first input end, IN + is a second input end, THU-is a first I-path output end, THU + is a second I-path output end, CPL-is a first Q-path output end, CPL + is a second Q-path output end, ISO-is a first isolation end, and ISO + is a second isolation end;
cp is parasitic capacitance, K is coupling coefficient, and R is isolation resistance.
Detailed Description
As shown in fig. 1 to 7, in the Doherty power amplifier based on the small-sized quadrature signal generator according to the present invention, an I-path differential signal of the quadrature signal generator is amplified by a main path and then enters an I-path input of an output power combiner, a Q-path differential signal is amplified by a sub-path and then enters a Q-path input, and the output power combiner combines the amplified I-path differential signal and Q-path differential signal and outputs the combined signals to the outside.
The orthogonal signal generator comprises a first metal layer 100, a second metal layer 200, a third metal layer 300 and a fourth metal layer 400 which are sequentially stacked from top to bottom, wherein the first metal layer 100 is electrically connected with the second metal layer 200, the second metal layer 200 is electrically connected with the third metal layer 300, and the third metal layer 300 is electrically connected with the fourth metal layer 400:
the second metal layer 200 forms an I-path differential signal output line of an annular structure, and a fracture is provided for a line segment of the same plane to pass through.
The third metal layer 300 forms a Q-path differential signal output line with an annular structure, and a fracture is provided for a line segment of the same plane to cross interfere with each other to pass through.
The first metal layer 100 is provided with a plurality of cross-line segments for connecting two ends of each fracture of the second metal layer 200 in a one-to-one correspondence manner.
The fourth metal layer 400 is provided with a plurality of cross line segments for connecting two ends of each fracture of the third metal layer 300 in a one-to-one correspondence manner.
The ring structure of the third metal layer 300 is vertically overlapped with the ring structure of the second metal layer 200, and each cross-line segment of the first metal layer 100 is vertically overlapped with the cross-line segment of the fourth metal layer 400.
The I-path differential signal lines are partially overlapped in the middle of the orthogonal signal generator.
The I-path differential signal circuit is in a 1.5-circle annular structure.
The second metal layer 200 includes a first I-route segment 210 located at the outer circle of the first quadrant, a second I-route segment 220 extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant through the inner circle of the third quadrant, a third I-route segment 230 extending from the middle circle of the first quadrant to the outer circle of the fourth quadrant, a fourth I-route segment 240 extending from the outer circle of the second quadrant to the middle circle of the third quadrant, a fifth I-route segment 250 extending from the middle circle of the second quadrant to the inner circle of the fourth quadrant through the inner circle of the first quadrant, and a sixth I-route segment 260 located at the outer circle of the third quadrant. The end of the first I-line segment 210 away from the first input lead 231 extends out of the first I-line output lead 211, and a first top layer fracture is formed between the end away from the first I-line output lead 211 and the end of the second I-line segment 220 located in the fourth quadrant. A second top layer discontinuity is formed between the end of the fifth I-route segment 250 located in the fourth quadrant and the end of the fourth I-route segment 240 located in the third quadrant, and a second I-route output lead 241 extends from the end of the fourth I-route segment 240 located in the first quadrant. The end of the sixth I-route segment 260 remote from the second I-route output lead 241 extends out of the second input lead 261, and a third top layer discontinuity is formed between the end remote from the second input lead 261 and the end of the fifth I-route segment 250 located in the second quadrant. The end of the third I-route segment 230 away from the first I-route output lead 211 extends out of the first input lead 231, and a fourth top-layer discontinuity is formed between the end away from the first input lead 231 and the end of the second I-route segment 220 in the second quadrant.
The first metal layer 100 includes a first top-layer cross-line segment 110 for connecting the first top-layer fracture, a second top-layer cross-line segment 120 for connecting the second top-layer fracture, a third top-layer cross-line segment 130 for connecting the third top-layer fracture, and a fourth top-layer cross-line segment 140 for connecting the fourth top-layer fracture.
The third metal layer 300 includes a first Q route segment 310 located at the outer circle of the first quadrant, a second Q route segment 320 extending from the middle circle of the fourth quadrant to the inner circle of the second quadrant through the inner circle of the third quadrant, a third Q route segment 330 extending from the middle circle of the first quadrant to the outer circle of the fourth quadrant, a fourth Q route segment 340 extending from the outer circle of the second quadrant to the middle circle of the third quadrant, a fifth Q route segment 350 extending from the middle circle of the second quadrant to the inner circle of the fourth quadrant through the inner circle of the first quadrant, and a sixth Q route segment 360 located at the outer circle of the third quadrant. The end of the first Q-way segment 310 far away from the first Q-way output lead 331 extends out of the first isolation lead 311, and a first bottom fracture is formed between the end far away from the first isolation lead 311 and the end of the second Q-way segment 320 located in the fourth quadrant. A second bottom fracture is formed between the end of the fifth Q route segment 350 located in the fourth quadrant and the end of the fourth Q route segment 340 located in the third quadrant, and a second isolation lead 341 extends from the end of the fourth Q route segment 340 located in the first quadrant. The end of the sixth Q route segment 360 away from the second isolation lead 341 extends out of the second Q route output lead 361, and a third bottom fracture is formed between the end away from the second Q route output lead 361 and the end of the fifth Q route segment 350 located in the second quadrant. The end of the third Q route segment 330 far from the first isolation lead 311 extends out of the first Q route output lead 331, and a fourth bottom fracture is formed between the end far from the first Q route output lead 331 and the end of the second Q route segment 320 located in the second quadrant.
The fourth metal layer 400 includes a first bottom-layer cross-line segment 410 for connecting the first bottom-layer fracture, a second bottom-layer cross-line segment 420 for connecting the second bottom-layer fracture, a third bottom-layer cross-line segment 430 for connecting the third bottom-layer fracture, and a fourth bottom-layer cross-line segment 440 for connecting the fourth bottom-layer fracture.
The lumped model of the quadrature signal generator is shown IN fig. 8, IN which the second I output lead 241 is equivalent to THU +, the first I output lead 211 is equivalent to THU-, the second input lead 261 is equivalent to IN +, the first input lead 231 is equivalent to IN-, the second isolation lead 341 is equivalent to ISO +, the first isolation lead 311 is equivalent to ISO-, the second Q output lead 361 is equivalent to CPL +, and the first Q output lead 331 is equivalent to CPL-. Equivalent parasitic capacitance Cp is formed between the second metal layer 200, the third metal layer 300 and the ground. Two transformers with a coupling coefficient K are formed between the second metal layer 200 and the third metal layer 300, and respectively correspond to differential Q-path coupling. The differential input signal is voltage-transformed and coupled to the third metal layer 300 in the second metal layer 200, so as to implement differential Q-path output. And the differential I-path output is realized at the second metal layer 200. The parasitic capacitance Cp of the metal wiring and the actual transformer are utilized to carry out resonance, so that resonance can be realized without additionally adding a capacitor, and the power loss is reduced. Aiming at the defects of large area and large loss of an orthogonal signal generator in the structure of the traditional Doherty power amplifier, the invention carries out reasonable layout on IQ two-way transformers and utilizes a method of combining up-down magnetic coupling and side magnetic coupling between metals to ensure that the IQ two-way transformers only occupy the area of one transformer, thereby realizing the aim of miniaturization.
It can be seen in fig. 9 that the gain characteristic has an insertion loss of only 0.6dB at 28GHz, where 3dB is the power split. However, as can be seen from fig. 10, the phase quadrature characteristic is good within 20GHz to 40GHz, which is beneficial to realizing broadband application. The quadrature signal generator achieves good phase orthogonality.
Fig. 11 is a simulation result of the small signal S parameter of the Doherty power amplifier of the present invention, which shows that the small signal gain S21 is 18.7dB at about 28GHz, and the 3dB bandwidth is 26.02-29.05 GHz. The input match S11 was-20.61 dB at 28 GHz. The isolation S12 was less than-84.31 dB at 28 GHz.
Fig. 12 shows the large signal simulation result of the Doherty pa of the invention, where the power gain is 22.1dB, the power gain jitter is 0.86dB, the saturation output power is 23.3dBm, and the output 1dB compression point is 22.92 dBm.
Fig. 13 is a large-signal output power back-off simulation result of the Doherty power amplifier of the invention, the peak power added efficiency is 37.38%, the 6dB output power back-off efficiency is 24.5%, and compared with an ideal class B amplifier, the 6dB power back-off efficiency is improved by 1.54 times.
The influence caused by the change and mismatch of the process angle can be further verified through Monte Carlo simulation. The results of 100 simulations are shown in fig. 14-16, which show error distributions with good agreement with post-simulation results. The Doherty power amplifier has the characteristics of small area, low loss and the like, and the overall performance of the Doherty power amplifier is unchanged.
It will be apparent to those skilled in the art that various other changes and modifications may be made in the above-described embodiments and concepts and all such changes and modifications are intended to be within the scope of the appended claims.

Claims (4)

1. A Doherty power amplifier based on a small-sized orthogonal signal generator is characterized in that an I path differential signal of the orthogonal signal generator enters an I path input of an output power synthesizer after being amplified by a main path, a Q path differential signal enters a Q path input after being amplified by an auxiliary path, and the I path differential signal and the Q path differential signal after being amplified are synthesized by the output power synthesizer and output to the outside;
it is characterized in that the preparation method is characterized in that,
orthogonal signal generator from top to bottom stack gradually first metal level (100), second metal level (200), third metal level (300) and fourth metal level (400) constitute, wherein first metal level (100) and second metal level (200) electric connection, second metal level (200) and third metal level (300) insulated connection, third metal level (300) and fourth metal level (400) electric connection:
the second metal layer (200) forms an I-path differential signal output line of an annular structure, and a fracture is formed for line segments which are intersected and interfered in the same plane to pass through;
the third metal layer (300) forms a Q-path differential signal output circuit with an annular structure, and a fracture is formed for line segments which are intersected and interfered in the same plane to pass through;
the first metal layer (100) is provided with a plurality of cross-line segments for correspondingly connecting two ends of each fracture of the second metal layer (200) one by one;
the fourth metal layer (400) is provided with a plurality of cross line segments for correspondingly connecting two ends of each fracture of the third metal layer (300) one by one;
the ring-shaped structure of the third metal layer (300) and the ring-shaped structure of the second metal layer (200) are vertically overlapped, and each cross-line segment of the first metal layer (100) and the cross-line segment of the fourth metal layer (400) are vertically overlapped.
2. The Doherty power amplifier based on a small-sized quadrature signal generator of claim 1, wherein the I-path differential signal lines form a partial overlap in the middle of the quadrature signal generator.
3. The Doherty power amplifier based on a small-scale quadrature signal generator as claimed in claim 2, wherein the I-path differential signal line has a ring structure with 1.5 turns.
4. The Doherty power amplifier of claim 3 based on a small-scale quadrature signal generator, wherein the second metal layer (200) comprises a first I-route segment (210) located at an outer circle of the first quadrant, a second I-route segment (220) extending from a middle circle of the fourth quadrant to an inner circle of the second quadrant through an inner circle of the third quadrant, a third I-route segment (230) extending from the middle circle of the first quadrant to an outer circle of the fourth quadrant, a fourth I-route segment (240) extending from an outer circle of the second quadrant to an inner circle of the third quadrant, a fifth I-route segment (250) extending from the middle circle of the second quadrant to an inner circle of the fourth quadrant through the inner circle of the first quadrant, and a sixth I-route segment (260) located at an outer circle of the third quadrant; the end of the first I-path segment (210) far away from the first input lead (231) extends out of a first I-path output lead (211), and a first top layer fracture is formed between the end far away from the first I-path output lead (211) and the end of the second I-path segment (220) located in the fourth quadrant; a second top layer fracture is formed between the end part of the fifth I-path segment (250) positioned in the fourth quadrant and the end part of the fourth I-path segment (240) positioned in the third quadrant, and a second I-path output lead (241) extends from the end part of the fourth I-path segment (240) positioned in the first quadrant; a second input lead (261) extends out of the end part of the sixth I route segment (260) far away from the second I route output lead (241), and a third top layer fracture is formed between the end part far away from the second input lead (261) and the end part of the fifth I route segment (250) located in the second quadrant; the end of the third I route segment (230) far away from the first I route output lead (211) extends out of the first input lead (231), and a fourth top layer fracture is formed between the end far away from the first input lead (231) and the end of the second I route segment (220) located in the second quadrant;
the first metal layer (100) comprises a first top layer cross-line segment (110) for connecting the first top layer fracture, a second top layer cross-line segment (120) for connecting the second top layer fracture, a third top layer cross-line segment (130) for connecting the third top layer fracture, and a fourth top layer cross-line segment (140) for connecting the fourth top layer fracture;
the third metal layer (300) comprises a first Q route segment (310) positioned at the outer ring of the first quadrant, a second Q route segment (320) extending from the middle ring of the fourth quadrant to the inner ring of the second quadrant through the inner ring of the third quadrant, a third Q route segment (330) extending from the middle ring of the first quadrant to the outer ring of the fourth quadrant, a fourth Q route segment (340) extending from the outer ring of the second quadrant to the middle ring of the third quadrant, a fifth Q route segment (350) extending from the middle ring of the second quadrant to the inner ring of the fourth quadrant through the inner ring of the first quadrant, and a sixth Q route segment (360) positioned at the outer ring of the third quadrant; the end part of the first Q route segment (310) far away from the first Q route output lead (331) extends out of a first isolation lead (311), and a first bottom fracture is formed between the end part far away from the first isolation lead (311) and the end part of the second Q route segment (320) located in the fourth quadrant; a second bottom fracture is formed between the end part of the fifth Q route section (350) positioned in the fourth quadrant and the end part of the fourth Q route section (340) positioned in the third quadrant, and a second isolation lead (341) extends from the end part of the fourth Q route section (340) positioned in the first quadrant; a second Q-way output lead (361) extends from the end part, far away from the second isolation lead (341), of the sixth Q-way line segment (360), and a third bottom fracture is formed between the end part, far away from the second Q-way output lead (361), of the sixth Q-way line segment and the end part, located in the second quadrant, of the fifth Q-way line segment (350); a first Q-way output lead (331) extends from the end part of the third Q-way segment (330) far away from the first isolation lead (311), and a fourth bottom fracture is formed between the end part far away from the first Q-way output lead (331) and the end part of the second Q-way segment (320) located in the second quadrant;
the fourth metal layer (400) comprises a first bottom-layer span segment (410) for connecting the first bottom-layer fracture, a second bottom-layer span segment (420) for connecting the second bottom-layer fracture, a third bottom-layer span segment (430) for connecting the third bottom-layer fracture, and a fourth bottom-layer span segment (440) for connecting the fourth bottom-layer fracture.
CN202210089555.2A 2022-01-25 2022-01-25 Doherty power amplifier based on small-sized orthogonal signal generator Pending CN114520633A (en)

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Publication number Priority date Publication date Assignee Title
US20220200781A1 (en) * 2020-12-18 2022-06-23 Intel Corporation Wide-range inductor-based delay-cell and area efficient termination switch control

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Publication number Priority date Publication date Assignee Title
US20190165739A1 (en) * 2017-11-27 2019-05-30 Skyworks Solutions, Inc. Quadrature combined doherty amplifiers
CN112165303A (en) * 2020-10-16 2021-01-01 中国电子科技集团公司第三十八研究所 Broadband quadrature phase generation network based on stacked transformer

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20190165739A1 (en) * 2017-11-27 2019-05-30 Skyworks Solutions, Inc. Quadrature combined doherty amplifiers
CN112165303A (en) * 2020-10-16 2021-01-01 中国电子科技集团公司第三十八研究所 Broadband quadrature phase generation network based on stacked transformer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20220200781A1 (en) * 2020-12-18 2022-06-23 Intel Corporation Wide-range inductor-based delay-cell and area efficient termination switch control

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