CN114479076A - 一种低介电聚酰亚胺薄膜及其制备方法、应用 - Google Patents
一种低介电聚酰亚胺薄膜及其制备方法、应用 Download PDFInfo
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Abstract
本发明公开了一种低介电聚酰亚胺薄膜,其合成原料包括:二酐单体、二胺单体1、1,3,5‑三(4‑氨基苯氧基)苯和物质A。本发明还公开了上述低介电聚酰亚胺薄膜的制备方法,包括如下步骤:在惰性气体氛围中,取二酐单体、二胺单体1、物质A在有机溶剂中反应得到聚酰胺酸溶液,然后加入1,3,5‑三(4‑氨基苯氧基)苯,继续反应得到中间溶液,将中间溶液涂布在载体表面,亚胺化得到低介电聚酰亚胺薄膜。本发明还公开了上述低介电聚酰亚胺薄膜在集成电路绝缘材料中的应用。本发明的介电常数低,并且具有良好的机械性能。
Description
技术领域
本发明涉及聚酰亚胺技术领域,尤其涉及一种低介电聚酰亚胺薄膜及其制备方法、应用。
背景技术
随着科学技术的巨大进步,人们正迈向信息化时代,因而微电子领域的发展尤为重要。由于集成电子器件逐渐微小化,芯片上布线间距越来越小,两相邻的导线之间由于电容耦合和交叉干扰作用所造成的信号迟滞大幅度增加。为了降低传输过程中的信号延迟,达到集成电路高集成度的要求,金属层间绝缘材料的介电常数需要尽可能低,而传统二氧化硅材料的介电常数约为4,已经不能满足未来集成电路的发展。
因此,需要开发新型低介电常数(尤其是介电常数<2.5)材料。聚酰亚胺具有优异的机械性能、热稳定性以及绝缘性能,可以作为集成电路的绝缘材料使用,但聚酰亚胺的介电常数在3.0-3.5,大于2.5,限制了其在集成电路中的应用。
发明内容
基于背景技术存在的技术问题,本发明提出了一种低介电聚酰亚胺薄膜及其制备方法、应用,本发明的介电常数低,并且具有良好的机械性能。
本发明提出了一种低介电聚酰亚胺薄膜,其合成原料包括:二酐单体、二胺单体1、1,3,5-三(4-氨基苯氧基)苯和物质A;其中,物质A的结构式如式(I)所示:
优选地,物质A的分子量为400-500。
上述物质A的制备方法为:取聚氧化乙烯和对氨基氯苄,在含有氢氧化钠的乙醇溶液中,加热至60℃反应24h,然后减压蒸馏,于60℃真空干燥得到物质A,其中,聚氧化乙烯和对氨基氯苄的摩尔比为1:2.2。
优选地,二胺单体1、1,3,5-三(4-氨基苯氧基)苯和物质A的摩尔比为9.4-9.6:0.3-0.4:0.1-0.2。
优选地,二胺单体1、1,3,5-三(4-氨基苯氧基)苯和物质A的总摩尔数与二酐单体摩尔数的比为9.7-9.8:10。
上述二胺单体可以为:4,4'-二氨基二苯醚、3,4'-二氨基二苯醚、4,4'-二氨基二苯砜、3,3'-二氨基二苯砜、2,2'-双(三氟甲基)-4,4'-二氨基联苯、α,α'-双(4-氨基苯基)-1,4-二异丙基苯、1,4-双(2-三氟甲基4-氨基苯氧基)苯、1,3-双(2-三氟甲基-4-氨基苯氧基)苯、1,4-双(2-甲基-4-氨基苯氧基)苯、1,3-双(2-甲基-4-氨基苯氧基)苯、4,4'-双(2-三氟甲基-4-氨基苯氧基)联苯、4,4'-双(2-甲基-4-氨基苯氧基)联苯、2,2’-双[4-(4-氨基苯氧基苯基)]丙烷、2,2-双[4-(4-氨基苯氧基)苯基]六氟丙烷、2,2-双[4-(2-三氟甲基-4-氨基苯氧基)苯基]丙烷、2,2-双[4-(2-三氟甲基-4-氨基苯氧基)苯基]六氟丙烷和4,4’-双(4-氨基苯氧基)二苯砜、2-(4-氨基苯基)-5-氨基苯并咪唑、2-(3-氨基苯基)-5-氨基苯并咪唑等。优选为:2-(4-氨基苯基)-5-氨基苯并咪唑、2-(3-氨基苯基)-5-氨基苯并咪唑、4,4'-二氨基二苯醚、2,2'-双(三氟甲基)-4,4'-二氨基联苯等。
上述2-(4-氨基苯基)-5-氨基苯并咪唑、2-(3-氨基苯基)-5-氨基苯并咪唑可以在聚酰胺酸分子链之间形成氢键,进一步提高薄膜的尺寸稳定性;上述2'-双(三氟甲基)-4,4'-二氨基联苯中含有氟元素,可以进一步降低薄膜的介电常数。
上述二酐单体可以为:4,4'-(六氟异丙烯)二酞酸酐、4,4'-氧双邻苯二甲酸酐、1,2,3,4-环丁烷四羧酸二酐、1,2,3,4-环戊烷四羧酸二酐、1,2,4,5-环己烷四羧酸二酐、双环[2.2.2]辛-7-烯-2,3,5,6-四羧酸二酐等。
本发明还提出了上述低介电聚酰亚胺薄膜的制备方法,包括如下步骤:在惰性气体氛围中,取二酐单体、二胺单体1、物质A在有机溶剂中反应得到聚酰胺酸溶液,然后加入1,3,5-三(4-氨基苯氧基)苯,继续反应得到中间溶液,将中间溶液涂布在载体表面,亚胺化得到低介电聚酰亚胺薄膜。
优选地,于5-15℃反应10-12h聚酰胺酸溶液。
优选地,于5-15℃继续反应0.5-1h得到中间溶液。
本发明还提出了上述低介电聚酰亚胺薄膜在集成电路绝缘材料中的应用。
有益效果:
本发明选用聚氧化乙烯和对氨基氯苄反应,在聚氧化乙烯两端接枝上氨基,与二酐单体反应,将聚氧化乙烯接枝聚酰胺酸分子链上,聚氧化乙烯受热容易分解,在亚胺化时分解,从而在聚酰亚胺薄膜上引入细小的孔隙,从而大幅降低聚酰亚胺的介电常数;但是孔隙的存在降低了薄膜的机械性能和尺寸稳定性,通过加入1,3,5-三(4-氨基苯氧基)苯继续反应,可以使得聚酰胺酸分子链交联形成网络,从而提高薄膜的机械性能和尺寸稳定性,使其适用于集成电路的绝缘材料;调节合适的二胺单体1、1,3,5-三(4-氨基苯氧基)苯、物质A、二酐单体的用量,可以在降低介电常数的同时,保持良好的机械性能。
具体实施方式
下面,通过具体实施例对本发明的技术方案进行详细说明,但是应该明确提出这些实施例用于举例说明,但是不解释为限制本发明的范围。
实施例1
一种低介电聚酰亚胺薄膜的制备方法,包括如下步骤:将0.19mmol物质A、9.12mmol 4,4'-二氨基二苯醚加入N,N-二甲基乙酰胺混匀溶解,然后通入氮气排出空气,加入10mmol 4,4'-氧双邻苯二甲酸酐混匀溶解,调节温度为15℃,搅拌反应10h得到聚酰胺酸溶液,然后加入0.39mmol 1,3,5-三(4-氨基苯氧基)苯混匀,调节温度为15℃,搅拌反应0.5h得到中间溶液,将中间溶液涂布在载体表面,依次在90℃、120℃、180℃、250℃、300℃分别保温0.5h得到尺寸稳定低介电聚酰亚胺薄膜。
实施例2
一种低介电聚酰亚胺薄膜的制备方法,包括如下步骤:将0.1mmol物质A、9.41mmol2,2'-双(三氟甲基)-4,4'-二氨基联苯加入N,N-二甲基乙酰胺混匀溶解,然后通入氮气排出空气,加入10mmol 1,2,4,5-环己烷四羧酸二酐混匀溶解,调节温度为10℃,搅拌反应11h得到聚酰胺酸溶液,然后加入0.29mmol 1,3,5-三(4-氨基苯氧基)苯混匀,调节温度为10℃,搅拌反应0.7h得到中间溶液,将中间溶液涂布在载体表面,依次在90℃、120℃、180℃、250℃、300℃分别保温0.5h得到尺寸稳定低介电聚酰亚胺薄膜。
实施例3
一种低介电聚酰亚胺薄膜的制备方法,包括如下步骤:将0.15mmol物质A、9.26mmol 2-(4-氨基苯基)-5-氨基苯并咪唑加入N,N-二甲基乙酰胺混匀溶解,然后通入氮气排出空气,加入10mmol 4,4'-(六氟异丙烯)二酞酸酐混匀溶解,调节温度为5℃,搅拌反应12h得到聚酰胺酸溶液,然后加入0.34mmol 1,3,5-三(4-氨基苯氧基)苯混匀,调节温度为5℃,搅拌反应1h得到中间溶液,将中间溶液涂布在载体表面,依次在90℃、120℃、180℃、250℃、300℃分别保温0.5h得到尺寸稳定低介电聚酰亚胺薄膜。
对比例1
将“0.15mmol物质A、9.26mmol 2-(4-氨基苯基)-5-氨基苯并咪唑”替换成“9.41mmol 2-(4-氨基苯基)-5-氨基苯并咪唑”,其他同实施例3。
对比例2
不添加1,3,5-三(4-氨基苯氧基)苯,其他同实施例3。
对比例3
将“0.15mmol物质A、9.26mmol 2-(4-氨基苯基)-5-氨基苯并咪唑”替换成“9.41mmol 2-(4-氨基苯基)-5-氨基苯并咪唑”,不添加1,3,5-三(4-氨基苯氧基)苯,其他同实施例3。
检测实施例1-3和对比例1-3制得的聚酰亚胺薄膜(厚度均为50μm)的性能,结果如表1所示。
表1 检测结果
检测项目 | 介电常数 | 50-400℃热膨胀系数(K<sup>-1</sup>) | 拉伸强度(MPa) |
实施例1 | 2.08 | 3.25×10<sup>-6</sup> | 282 |
实施例2 | 2.19 | 3.40×10<sup>-6</sup> | 270 |
实施例3 | 2.10 | 3.16×10<sup>-6</sup> | 303 |
对比例1 | 3.23 | 2.13×10<sup>-6</sup> | 310 |
对比例2 | 2.22 | 30×10<sup>-6</sup> | 189 |
对比例3 | 3.30 | 30.5×10<sup>-6</sup> | 203 |
由表1可以看出,本发明介电常数低,同时具有良好的机械性能。
以上所述,仅为本发明较佳的具体实施方式,但本发明的保护范围并不局限于此,任何熟悉本技术领域的技术人员在本发明揭露的技术范围内,根据本发明的技术方案及其发明构思加以等同替换或改变,都应涵盖在本发明的保护范围之内。
Claims (8)
2.根据权利要求1所述低介电聚酰亚胺薄膜,其特征在于,物质A的分子量为400-500。
3.根据权利要求1或2所述低介电聚酰亚胺薄膜,其特征在于,二胺单体1、1,3,5-三(4-氨基苯氧基)苯和物质A的摩尔比为9.4-9.6:0.3-0.4:0.1-0.2。
4.根据权利要求1-3任一项所述低介电聚酰亚胺薄膜,其特征在于,二胺单体1、1,3,5-三(4-氨基苯氧基)苯和物质A的总摩尔数与二酐单体摩尔数的比为9.7-9.8:10。
5.一种如权利要求1-4任一项所述低介电聚酰亚胺薄膜的制备方法,其特征在于,包括如下步骤:在惰性气体氛围中,取二酐单体、二胺单体1、物质A在有机溶剂中反应得到聚酰胺酸溶液,然后加入1,3,5-三(4-氨基苯氧基)苯,继续反应得到中间溶液,将中间溶液涂布在载体表面,亚胺化得到低介电聚酰亚胺薄膜。
6.根据权利要求5所述低介电聚酰亚胺薄膜的制备方法,其特征在于,于5-15℃反应10-12h聚酰胺酸溶液。
7.根据权利要求5或6所述低介电聚酰亚胺薄膜的制备方法,其特征在于,于5-15℃继续反应0.5-1h得到中间溶液。
8.一种如权利要求1-4任一项所述低介电聚酰亚胺薄膜在集成电路绝缘材料中的应用。
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CN115584024A (zh) * | 2022-11-09 | 2023-01-10 | 合肥工业大学 | 一种含软/硬段的低介电常数聚酰亚胺薄膜及其制备方法 |
CN117296990A (zh) * | 2023-08-08 | 2023-12-29 | 河南蒜宝生物科技有限公司 | 一种安全绿色含大蒜提取物的复合饲料添加剂及其制备方法 |
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