CN114477993A - 一种ZnO材料及其基本性质研究方法和应用 - Google Patents

一种ZnO材料及其基本性质研究方法和应用 Download PDF

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CN114477993A
CN114477993A CN202210081667.3A CN202210081667A CN114477993A CN 114477993 A CN114477993 A CN 114477993A CN 202210081667 A CN202210081667 A CN 202210081667A CN 114477993 A CN114477993 A CN 114477993A
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zno
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董美
郭建军
林丽君
季旭
刘同来
孔壹右
张万桢
叶俊伟
梁志华
马佳升
陈杰鑫
李家蝉
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Zhongkai University of Agriculture and Engineering
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Abstract

本发明涉及锌的化合物技术领域,具体涉及一种ZnO材料及其基本性质研究方法和应用,ZnO材料按重量计,包括氧化锌85~95份、二氧化硅1~2份、二氧化钛0.5~2份、氧化铝0.2~1份、氧化钇0.1~0.4份、氧化铁0.1~0.5份和硫化锌2.5~5份;ZnO材料的制备方法包括按比例准备各种原材料,并将各种原材料进行粉碎得到粉体;将各种原材料粉体进行混合,混合过程中加入润滑剂,混合后进行球磨,制得球磨粉体;将球磨粉体烘干后进行预烧,制得预烧粉末;将预烧粉末压制成胚体,而后将胚体放置在900℃~1200℃下,保温3~6h,冷却后制得ZnO材料;以硫化锌与氧化钇作为烧结助剂,显著的降低了ZnO材料的电阻率。

Description

一种ZnO材料及其基本性质研究方法和应用
技术领域
本发明涉及锌的化合物技术领域,尤其涉及一种ZnO材料及其基本性质研究方法和应用。
背景技术
氧化锌是一种宽带半导体多功能材料,氧化锌的能带隙和激子束缚能较大,透明度高,有优异的常温发光性能,在半导体领域的液晶显示器、薄膜晶体管、发光二极管等产品中均有应用,近年来,关于ZnO压敏陶瓷材料制备的研究很多,但关于ZnO透明陶瓷材料制备的研究却非常少,是因为ZnO为纤锌矿结构,对于光的透射存在各向异性,另外由于陶瓷中存在大量晶界,也导致ZnO陶瓷电阻率偏高,因此不能作为光学陶瓷器件使用。
发明内容
本发明的目的在于提供一种ZnO材料及其基本性质研究方法和应用,能够制备电阻率低的ZnO材料。
为实现上述目的,第一方面,本发明提供了一种ZnO材料,按重量计,包括:氧化锌85~95份、二氧化硅1~2份、二氧化钛0.5~2份、氧化铝0.2~1份、氧化钇0.1~0.4份、氧化铁0.1~0.5份和硫化锌2.5~5份。
所述ZnO材料的制备方法包括:
按比例准备各种原材料,并将各种原材料进行粉碎得到粉体;
将各种原材料粉体进行混合,混合过程中加入润滑剂,混合后进行球磨,制得球磨粉体;
将所述球磨粉体烘干后进行预烧,制得预烧粉末;
将所述预烧粉末压制成胚体,而后将胚体放置在900℃~1200℃下,保温3~6h,冷却后制得ZnO材料。
所述球磨速率为300~400r/min,时间为18~24h。
所述预烧温度为900~1100℃。
所述预烧时间为3~5h。
第二方面,本发明还提供一种ZnO材料基本性质研究方法,包括:
准备不同高度的所述ZnO材料;
将不同高度的所述ZnO材料置于原子力显微镜上利用电流表分别测试电阻。
第三方面,本发明还提供一种ZnO材料的应用,所述ZnO材料应用于制造发光二极管。
本发明的一种ZnO材料及其基本性质研究方法和应用,通过以硫化锌与氧化钇作为烧结助剂,在烧结过程中硫化锌被氧化,提高ZnO材料固溶度并降低晶粒和晶界的结构差异,从而显著的降低了ZnO材料的电阻率,使其在用于作为制造发光二极管等电子元件的原料时能够发挥较佳的效果。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍。
图1是本发明的ZnO材料的制备方法的流程图。
图2是本发明的一种ZnO材料基本性质研究方法的流程图。
具体实施方式
下面详细描述本发明的实施例,所述实施例的示例在附图中示出,其中自始至终相同或类似的标号表示相同或类似的元件或具有相同或类似功能的元件。下面通过参考附图描述的实施例是示例性的,旨在用于解释本发明,而不能理解为对本发明的限制。
请参阅图1~图2,第一方面,本发明提供一种ZnO材料:按重量计,包括:氧化锌85~95份、二氧化硅1~2份、二氧化钛0.5~2份、氧化铝0.2~1份、氧化钇0.1~0.4份、氧化铁0.1~0.5份和硫化锌2.5~5份。
在本实施方式中,通过以硫化锌与氧化钇作为烧结助剂,在烧结过程中硫化锌被氧化,提高ZnO材料固溶度并降低晶粒和晶界的结构差异,从而显著的降低了ZnO材料的电阻率,使其在用于作为制造发光二极管等电子元件的原料时能够发挥较佳的效果。
所述ZnO材料的制备方法包括:
S1按比例准备各种原材料,并将各种原材料进行粉碎得到粉体;
按重量计,准备氧化锌85~95份、二氧化硅1~2份、二氧化钛0.5~2份、氧化铝0.2~1份、氧化钇0.1~0.4份、氧化铁0.1~0.5份和硫化锌2.5~5份,并将各种原材料进行粉碎得到粉体,将粉碎后的原材料粉体过筛。
S2将各种原材料粉体进行混合,混合过程中加入润滑剂,混合后进行球磨,制得球磨粉体;
将过筛后的各种原材料粉体进行混合,混合过程中加入润滑剂,混合后在球磨速率为300~400r/min下进行球磨18~24h,制得球磨粉体;
S3将所述球磨粉体烘干后进行预烧,制得预烧粉末;
将所述球磨粉体烘干后进行在900~1100℃温度下预烧3~5h,制得预烧粉末。
S4将所述预烧粉末压制成胚体,而后将胚体放置在900℃~1200℃下,保温3~6h,冷却后制得ZnO材料;
将所述预烧粉末进行压制成胚体,而后将胚体放置在900℃~1200℃下,保温3~6h,冷却后制得ZnO材料。
所述球磨速率为300~400r/min,时间为18~24h。
所述预烧温度为900~1100℃。
所述预烧时间为3~5h。
为更好地理解本发明,下面采用几种具体的制造过程进行说明。
实施例1:准备氧化锌92份、氧化铝0.5份、硫化锌4份、氧化钇0.2份、二氧化钛1份、氧化铁0.3份及二氧化硅1.5份;将各种原材料进行粉碎得到粉体,将粉碎后的原材料粉体过筛,将过筛后的各种原材料粉体进行混合,混合过程中加入润滑剂,混合后在球磨速率为300~400r/min下进行球磨24h,制得球磨粉体;将所述球磨粉体烘干后进行在1000℃温度下预烧3~5h,制得预烧粉末;将所述预烧粉末进行压制成胚体,而后将胚体放置在1100℃下,保温6h,冷却后制得ZnO材料。
实施例2:准备氧化锌92份、氧化铝0.7份、硫化锌4份、氧化钇0.2份、二氧化钛1份、氧化铁0.3份及二氧化硅1.5份;将各种原材料进行粉碎得到粉体,将粉碎后的原材料粉体过筛,将过筛后的各种原材料粉体进行混合,混合过程中加入润滑剂,混合后在球磨速率为300~400r/min下进行球磨24h,制得球磨粉体;将所述球磨粉体烘干后进行在1000℃温度下预烧3~5h,制得预烧粉末;将所述预烧粉末进行压制成胚体,而后将胚体放置在1100℃下,保温6h,冷却后制得ZnO材料。
实施例3:准备氧化锌92份、氧化铝0.7份、硫化锌4份、氧化钇0.4份、二氧化钛1份、氧化铁0.3份及二氧化硅1.5份;将各种原材料进行粉碎得到粉体,将粉碎后的原材料粉体过筛,将过筛后的各种原材料粉体进行混合,混合过程中加入润滑剂,混合后在球磨速率为300~400r/min下进行球磨24h,制得球磨粉体;将所述球磨粉体烘干后进行在1000℃温度下预烧3~5h,制得预烧粉末;将所述预烧粉末进行压制成胚体,而后将胚体放置在1100℃下,保温6h,冷却后制得ZnO材料。
实施例4:准备氧化锌95份、氧化铝0.7份、硫化锌4份、氧化钇0.4份、二氧化钛1份、氧化铁0.3份及二氧化硅1.5份;将各种原材料进行粉碎得到粉体,将粉碎后的原材料粉体过筛,将过筛后的各种原材料粉体进行混合,混合过程中加入润滑剂,混合后在球磨速率为300~400r/min下进行球磨24h,制得球磨粉体;将所述球磨粉体烘干后进行在1000℃温度下预烧3~5h,制得预烧粉末;将所述预烧粉末进行压制成胚体,而后将胚体放置在1100℃下,保温6h,冷却后制得ZnO材料。
实施例5:准备氧化锌95份、氧化铝1份、硫化锌4份、氧化钇0.4份、二氧化钛1份、氧化铁0.3份及二氧化硅1.5份;将各种原材料进行粉碎得到粉体,将粉碎后的原材料粉体过筛,将过筛后的各种原材料粉体进行混合,混合过程中加入润滑剂,混合后在球磨速率为300~400r/min下进行球磨24h,制得球磨粉体;将所述球磨粉体烘干后进行在1000℃温度下预烧3~5h,制得预烧粉末;将所述预烧粉末进行压制成胚体,而后将胚体放置在1100℃下,保温6h,冷却后制得ZnO材料。
第二方面,本发明还提供一种ZnO材料基本性质研究方法,包括:
S5准备不同高度的所述ZnO材料;
将所述ZnO材料切割为不同高度,准备不同高度的所述ZnO材料。
S6将不同高度的所述ZnO材料置于原子力显微镜上利用电流表分别测试电阻;
将不同高度的所述ZnO材料置于原子力显微镜上,将电流表连接在所述ZnO材料上测试常压环境中所述ZnO材料的电流、电压曲线,计算得到所述ZnO材料的电阻,依照此方法分别测试不同高度的所述ZnO材料,得到不同高度的所述ZnO材料的电阻。
第三方面,本发明还提供一种ZnO材料的应用,所述ZnO材料应用于制造发光二极管。
在本实施方式中,依照所述ZnO材料基本性质研究方法得到的所述ZnO材料的电阻,根据不同高度的所述ZnO材料的电阻,将其作为制造发光二极管的原材料,具有较佳的效果。
以上所揭露的仅为本发明一种较佳实施例而已,当然不能以此来限定本发明之权利范围,本领域普通技术人员可以理解实现上述实施例的全部或部分流程,并依本发明权利要求所作的等同变化,仍属于发明所涵盖的范围。

Claims (7)

1.一种ZnO材料,其特征在于,
按重量计,包括:氧化锌85~95份、二氧化硅1~2份、二氧化钛0.5~2份、氧化铝0.2~1份、氧化钇0.1~0.4份、氧化铁0.1~0.5份和硫化锌2.5~5份。
2.如权利要求1所述的一种ZnO材料,其特征在于,
所述ZnO材料的制备方法包括:
按比例准备各种原材料,并将各种原材料进行粉碎得到粉体;
将各种原材料粉体进行混合,混合过程中加入润滑剂,混合后进行球磨,制得球磨粉体;
将所述球磨粉体烘干后进行预烧,制得预烧粉末;
将所述预烧粉末压制成胚体,而后将胚体放置在900℃~1200℃下,保温3~6h,冷却后制得ZnO材料。
3.如权利要求2所述的一种ZnO材料,其特征在于,
所述球磨速率为300~400r/min,时间为18~24h。
4.如权利要求3所述的一种ZnO材料,其特征在于,
所述预烧温度为900~1100℃。
5.如权利要求4所述的一种ZnO材料,其特征在于,
所述预烧时间为3~5h。
6.一种ZnO材料基本性质研究方法,用于研究如权利要求1~5任意一项所述的一种ZnO材料,其特征在于,包括:
准备不同高度的所述ZnO材料;
将不同高度的所述ZnO材料置于原子力显微镜上利用电流表分别测试电阻。
7.一种ZnO材料的应用,采用如权利要求1~5任意一项所述的一种ZnO材料,其特征在于,所述ZnO材料应用于制造发光二极管。
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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1454085A (en) * 1972-10-12 1976-10-27 Minnesota Mining & Mfg Zinc oxide light emitting diode
WO2001068553A1 (fr) * 2000-03-13 2001-09-20 Osaka Prefectural Government Production d'un compact fritte d'oxyde de zinc et varistance en oxyde de zinc
CN103896578A (zh) * 2014-03-19 2014-07-02 桂林电子科技大学 一种高密度低电阻率氧化锌陶瓷靶材的制备方法
CN104060232A (zh) * 2014-06-20 2014-09-24 江阴恩特莱特镀膜科技有限公司 铪掺杂氧化锌透明导电薄膜的制备方法
CN108585827A (zh) * 2018-07-10 2018-09-28 芜湖市元奎新材料科技有限公司 低电阻氧化锌陶瓷材料及其制备方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1454085A (en) * 1972-10-12 1976-10-27 Minnesota Mining & Mfg Zinc oxide light emitting diode
WO2001068553A1 (fr) * 2000-03-13 2001-09-20 Osaka Prefectural Government Production d'un compact fritte d'oxyde de zinc et varistance en oxyde de zinc
CN103896578A (zh) * 2014-03-19 2014-07-02 桂林电子科技大学 一种高密度低电阻率氧化锌陶瓷靶材的制备方法
CN104060232A (zh) * 2014-06-20 2014-09-24 江阴恩特莱特镀膜科技有限公司 铪掺杂氧化锌透明导电薄膜的制备方法
CN108585827A (zh) * 2018-07-10 2018-09-28 芜湖市元奎新材料科技有限公司 低电阻氧化锌陶瓷材料及其制备方法

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