CN114457413A - Crystal growth equipment and crystal growth method - Google Patents
Crystal growth equipment and crystal growth method Download PDFInfo
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- CN114457413A CN114457413A CN202111673957.9A CN202111673957A CN114457413A CN 114457413 A CN114457413 A CN 114457413A CN 202111673957 A CN202111673957 A CN 202111673957A CN 114457413 A CN114457413 A CN 114457413A
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- 230000012010 growth Effects 0.000 title claims abstract description 94
- 239000013078 crystal Substances 0.000 title claims abstract description 82
- 238000002109 crystal growth method Methods 0.000 title claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 47
- 239000002994 raw material Substances 0.000 claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 23
- 239000007788 liquid Substances 0.000 claims abstract description 22
- 238000010438 heat treatment Methods 0.000 claims abstract description 20
- 239000000155 melt Substances 0.000 claims abstract description 5
- 239000000203 mixture Substances 0.000 claims abstract description 4
- 238000007599 discharging Methods 0.000 claims description 19
- 230000005540 biological transmission Effects 0.000 claims description 7
- 238000004804 winding Methods 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 4
- 238000003780 insertion Methods 0.000 description 3
- 230000037431 insertion Effects 0.000 description 3
- 230000033001 locomotion Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000007493 shaping process Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- -1 firstly Substances 0.000 description 1
- 238000011900 installation process Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/06—Non-vertical pulling
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/10—Crucibles or containers for supporting the melt
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/10—Production of homogeneous polycrystalline material with defined structure from liquids by pulling from a melt
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
The invention discloses a crystal growth device and a crystal growth method, the crystal growth device comprises a rack, a growth furnace is arranged on the rack, a heating zone for creating a crystal growth environment is formed inside the growth furnace, a discharge port is formed on the growth furnace, a crucible is arranged on the rack in a sliding manner, the crucible is in a long tube shape and is arranged in an inclined or horizontal manner, an opening of the crucible faces the growth furnace and is in inserted sliding fit with the discharge port, the sliding direction of the crucible is parallel to the length direction of the crucible, and a driving assembly for driving the crucible to slide is arranged on the rack. The crystal growth method comprises the following steps: mixing the raw materials for growing the ultra-long crystal and pouring the mixture into a crucible; moving the material guide plate, and moving the crucible into the heating area; the heating area melts the raw materials into liquid, then the crucible is slowly moved out of the heating area by the material guide plate, and the liquid is cooled and solidified to form crystals. The crucible deformation and liquid leakage conditions of the oversized crystal in the growth process are improved.
Description
Technical Field
The invention relates to the field of crystal growth technology, in particular to crystal growth equipment and a crystal growth method.
Background
The crystal growth refers to a process of melting a crystal raw material by a physical means, and then performing recombination pulling to form a required crystal.
In the prior art, a longitudinal pulling method is adopted to carry out the growth operation of the ultra-long crystal, firstly, raw materials are put into a crucible, then, the crucible is placed into a growth furnace, the growth furnace heats the raw materials to enable the raw materials to be in a liquid state, and then, the crystal growth operation is carried out.
Disclosure of Invention
In order to improve the condition that the crucible is deformed, namely liquid leakage, caused by overlarge pressure at the bottom of the crucible and difficult to bear in the growth process of an oversized crystal, the application provides crystal growth equipment and a crystal growth method.
The crystal growth equipment provided by the invention adopts the following technical scheme:
the utility model provides a crystal growth equipment, includes the frame, be provided with the growth furnace in the frame, the inside of growth furnace is formed with the zone of heating that is used for building crystal growth environment, the discharge gate has been seted up on the growth furnace, it is provided with the crucible to slide in the frame, the crucible is long tube form, just the crucible is slope or level setting, the opening of crucible towards the growth furnace and with the cooperation of sliding of discharge gate grafting, just the direction of sliding of crucible is parallel with self length direction, be provided with the drive assembly who is used for driving the crucible and slides in the frame.
Through adopting above-mentioned technical scheme, slope or the level setting with the crucible for the raw materials melts the back, can not all pile up on the diapire of crucible, helps improving super large crystal promptly in the growth process, and crucible bottom pressure is too big to bear, leads to the crucible to warp and the condition of weeping.
Preferably, a discharging rail is obliquely arranged on the rack, the oblique direction of the discharging rail is parallel to that of the crucible, the higher side of the discharging rail is communicated with the discharging port, a material guide plate is arranged in the discharging rail in a sliding manner, the crucible is fixed on the material guide plate, and the driving assembly drives the material guide plate to slide.
Through adopting above-mentioned technical scheme, at the crystal growth in-process, utilize drive assembly drive stock guide to remove for the stock guide is along keeping away from the discharge gate and moving slowly on ejection of compact track, realizes promptly that the crucible slides to the one side of keeping away from the discharge gate, makes the shaping of growing gradually of overlength crystal.
Preferably, the drive assembly comprises
The screw rod is obliquely arranged, the oblique direction of the screw rod is parallel to that of the discharging rail, and the screw rod is rotationally connected with the rack;
the worm gear mechanism is coaxially fixed with the lead screw;
a driving piece arranged on the frame and in transmission connection with a worm in the worm gear mechanism,
the lead screw is in threaded connection with a nut seat, and the material guide plate is fixedly connected with the nut seat.
Through adopting above-mentioned technical scheme, utilize driving piece drive worm gear mechanism to move, drive the lead screw and rotate, and then make the stock guide slide on ejection of compact track through the nut, utilize screw drive, help improving the motion stability of stock guide, and help making the translation rate of stock guide, adapt to the growth of overlength crystal.
Preferably, the rack is provided with a guide rod in an inclined manner, the inclined direction of the guide rod is parallel to that of the lead screw, the nut seat is provided with a guide groove, and the guide rod is in insertion sliding fit with the guide groove.
Through adopting above-mentioned technical scheme, utilize guide bar and guide way to peg graft and slide the cooperation, help improving the stability of stock guide when removing, and then help improving the stability of crucible when removing.
Preferably, the driving part is a hand wheel, the rack is rotatably connected with a first gear, a second gear is coaxially fixed at the end of a worm in the worm gear mechanism, a chain is wound on the first gear and the second gear, and the hand wheel drives the first gear to rotate.
Through adopting above-mentioned technical scheme, utilize the hand wheel control worm gear, drive the stock guide and remove, realize the removal of crucible.
Preferably, the driving piece is set as a driving motor, and the driving motor is in transmission connection with the worm and gear mechanism.
Through adopting above-mentioned technical scheme, utilize driving motor drive worm gear mechanism, realize the motion of stock guide, it is swift convenient.
Preferably, the rack is provided with an indicating part in a lifting manner, the rack is provided with a graduated scale, the scales of the graduated scale are distributed along the vertical direction, the rack is provided with an indicating part for indicating the scales on the graduated scale in the lifting manner, the indicating part and the material guide plate are connected with a connecting rope, the length direction of one side of the connecting rope, which is close to the material guide plate, is parallel to the sliding direction of the material guide plate, and when the material guide plate moves to one side far away from the material outlet, the indicating part descends; when the guide plate moves close to one side of the discharge hole, the indicating piece rises.
Through adopting above-mentioned technical scheme, the indicator goes up and down along with the removal of stock guide, and at its lift in-process, utilize the indicator to instruct the scale, can learn the displacement of stock guide, can learn the growth length condition of overlength crystal.
Preferably, be provided with the mounting panel in the frame, drive assembly, ejection of compact track and growth stove are all installed on the mounting panel, the one end that the growth stove was kept away from to the mounting panel is rotated with the frame and is connected, be provided with in the frame and be used for driving mounting panel pivoted and rotate the piece, the mounting panel is [0, 90 °) with the angle scope of horizontal plane.
Through adopting above-mentioned technical scheme, utilize and rotate the intermediate member drive mounting panel between 0 to 90 degrees and not include 90 degrees and rotate, realized the level or the tilt state of crucible promptly, according to the difference of overlength crystal length, adjust the inclination of crucible, help reducing the fracture and the dislocation phenomenon in the crystal growth process, help improving the quality of crystal promptly.
The application provides a crystal growth method, which comprises the following steps:
(1) mixing the raw materials for growing the ultra-long crystal and pouring the mixture into an inclined or horizontal crucible;
(2) moving the material guide plate, and moving the crucible into the heating area;
(3) the heating area melts the raw materials into liquid, then the crucible is slowly moved out of the heating area by the material guide plate, and the liquid is cooled and solidified to form crystals.
By adopting the technical scheme, the crucible is arranged obliquely or horizontally, and after the raw materials are melted into liquid through the heating area, the raw materials cannot be completely accumulated at the bottom of the crucible, so that the conditions of deformation and leakage of the crucible caused by overlarge pressure at the bottom of the crucible in the growth process and difficult bearing of the oversized crystal are improved.
Preferably, in the moving process of the material guide plate in the step (3), the moving distance of the material guide plate is read by the indicating member, so that the growth length of the crystal can be obtained.
By adopting the technical scheme, the growth length of the crystal is known according to the moving distance of the material guide plate, and the growth condition of the crystal can be monitored by workers in real time.
In summary, the present application includes at least one of the following beneficial technical effects:
the crucible is horizontally or obliquely arranged, and after the raw materials are melted into liquid through the heating area, the liquid cannot be completely accumulated at the bottom of the crucible, so that the conditions that the crucible deforms and leaks due to the fact that the pressure at the bottom of the crucible is too large and difficult to bear in the growth process of the oversized crystal are improved;
by means of the transmission of the lead screw and the guiding of the guide rod, the stability of the material guide plate during moving is improved, and the stability of the crucible during moving is improved, namely the stability of crystal growth is improved;
through rotating the piece, the drive mounting panel rotates, according to the length of required overlength crystal, the inclination of adjustment crucible to the best angle of settlement, help reducing the fracture and the dislocation phenomenon among the crystal growth process, help improving the quality of crystal promptly, in addition, at the continuous growth in-process of crystal, accessible indicator and scale learn the growth length of crystal, and then utilize the inclination of rotating the piece regulation crucible, adjust the inclination of shaping crystal promptly, prevent that inclination is too big, the fracture damage appears in the crystal.
Drawings
Fig. 1 is a schematic overall structure diagram of a first embodiment of the present application;
fig. 2 is a partial schematic structural diagram of a first embodiment of the present application, which mainly shows a structure of a driving assembly;
fig. 3 is a schematic partial structural diagram of a second embodiment of the present application, which mainly shows a structure of a driving assembly;
fig. 4 is a schematic overall structure diagram of a third embodiment of the present application, which mainly embodies the structure of a hydraulic rod;
fig. 5 is a schematic flow chart illustrating a crystal growth method according to an embodiment of the present application.
Reference numerals: 1. a frame; 11. a first gear; 12. a guide bar; 13. mounting a plate; 2. a growth furnace; 21. a discharge port; 3. a crucible; 4. a drive assembly; 41. a lead screw; 411. a nut seat; 42. a worm and gear mechanism; 421. a second gear; 43. a drive member; 5. a discharge rail; 51. a thermal insulation board; 52. a conveying roller; 6. a stock guide; 7. a chain; 8. a guide block; 81. a guide groove; 9. a metering rod; 91. a graduated scale; 92. an indication block; 10. connecting ropes; 20. and a hydraulic cylinder.
Detailed Description
The present application is described in further detail below with reference to figures 1-5.
The embodiment of the application discloses crystal growth equipment.
In the case of the example 1, the following examples are given,
referring to fig. 1, a crystal growth apparatus includes a frame 1, fixed mounting has growth furnace 2 in the frame 1, growth furnace 2 is the cuboid form, and be formed with the zone of heating that is used for building crystal growth environment in the growth furnace 2, growth furnace 2 is slope or horizontal setting, it is provided with crucible 3 to slide on the frame 1, crucible 3 is the long tubular setting and is ceramic material, a raw materials for holding crystal growth, crucible 3 is slope or horizontal setting, in this application embodiment, growth furnace 2 and crucible 3 all are the slope setting, and the incline direction is unanimous, the lower side of growth furnace 2 is opened and is equipped with discharge gate 21, the opening of crucible 3 towards growth furnace 2 and with discharge gate 21 grafting cooperation of sliding, wherein the direction of sliding of crucible 3 is unanimous with self length direction, still be provided with the drive assembly 4 that is used for driving crucible 3 to carry out the glide campaign on the frame 1.
In fact, place the raw materials in crucible 3, then utilize drive assembly 4 to move into growth furnace 2 with crucible 3, the raw materials becomes the liquid attitude after high temperature melts, reuse drive assembly 4 drive crucible 3 and slide along the one side of keeping away from growth furnace 2, make liquid cool off gradually and solidify, the shaped crystal, because crucible 3 is the slope setting, consequently, liquid can not all pile up in the bottom of crucible 3, help improving the super large crystal promptly at the growth in-process, 3 bottom pressure of crucible is too big to bear, lead to the condition of crucible 3 deformation and weeping.
Referring to fig. 1, the discharging rail 5 that is the U shape form is installed along the incline direction fixed mounting of crucible 3 on the frame 1, the higher side of discharging rail 5 is linked together with discharge gate 21, and the opening part that discharging rail 5 is close to discharge gate 21 one side has been set up heated board 51, heated board 51 adopts high temperature resistant firebrick, the diapire upper berth of discharging rail 5 is equipped with conveying roller 52, the direction of delivery is parallel with the incline direction of discharging rail 5, be provided with stock guide 6 in the discharging rail 5, stock guide 6 utilizes conveying roller 52 to slide in discharging rail 5, wherein, crucible 3 fixed mounting is on stock guide 6.
Referring to fig. 1 and 2, the driving assembly 4 includes a screw 41, a worm and gear mechanism 42 and a driving element 43, the screw 41 is rotatably connected to the frame 1 and located above the discharging rail 5, a length direction of the screw 41 is parallel to a length direction of the discharging rail 5, that is, the screw 41 is disposed in an inclined manner and parallel to an inclined direction of the discharging rail 5, a nut seat 411 is connected to the screw 41 in a threaded manner, the material guide plate 6 is fixedly connected to the nut seat 411 through a connecting rod, a worm in the worm and gear mechanism 42 is rotatably connected to the frame 1, a worm wheel in the worm and gear mechanism is coaxially fixed to the screw 41, the frame 1 is rotatably connected to a first gear 11 through a linkage shaft, a second gear 421 is fixed to an end of the worm in the worm and gear mechanism 42, a chain 7 is wound around the first gear 11 and the second gear 421, so that the first gear 11 and the second gear 421 move synchronously, the driving element 43 is provided as a hand wheel, the hand wheel is fixed on the linkage shaft and used for driving the first gear 11 to rotate.
In practice, in the growth process of the crystal, the hand wheel is rotated, so that the first gear 11 rotates, and then the chain 7 drives the second gear 421 to rotate, so that the worm and gear mechanism 42 operates to drive the lead screw 41 to rotate, and further drives the nut seat 411 to move, that is, the guide plate 6 is driven to slide on the conveying roller 52, so that the crystal is gradually formed.
In addition, referring to fig. 1, a guide bar 12 is fixed to the frame 1, a longitudinal direction of the guide bar 12 is parallel to a longitudinal direction of the screw 41, that is, the guide bar 12 is disposed obliquely, and an oblique direction is parallel to an oblique direction of the screw 41, a guide block 8 is welded to the nut seat 411, a guide groove 81 in insertion sliding fit with the guide bar 12 is formed in the guide block 8, and the insertion sliding fit of the guide bar 12 and the guide groove 81 contributes to improvement of stability of the stock guide 6 during movement.
Referring to fig. 1, a measuring rod 9 is vertically fixed on one side of a frame 1, which is far away from a growth furnace 2, a graduated scale 91 is glued on the measuring rod 9, scales on the graduated scale 91 are vertically distributed, an indicating piece is arranged on the measuring rod 9 in a lifting manner and is set as an indicating block 92 for indicating the scales on the graduated scale 91, wherein the indicating block 92 is fixedly connected with a material guide plate 6 through a connecting rope 10, the length direction of the connecting rope 10, which is close to one side of the material guide plate 6, is parallel to the length direction of the material guide plate 6, the length direction of the connecting rope 10, which is close to one side of the indicating block 92, is vertically arranged, a plurality of pulleys are fixed on the frame 1, the connecting rope 10 is wound on the pulleys, and the change of the direction of the connecting rope 10 is realized.
When the material guide plate 6 moves, the connecting rope 10 moves the material guide plate 6, and the moving distance is the same as the moving distance of the material guide plate 6, that is, the moving distance of the indicating block 92 in the vertical direction is the same as the moving distance of the crucible 3, and in the process of crystal growth, the moving distance of the indicating block 92 is read by using the graduated scale 91, so that the length condition of crystal growth can be known.
The implementation principle of the crystal growth device in the embodiment of the application is as follows: in the actual growth process of the crystal, raw materials are put into a crucible 3, then the crucible 3 is conveyed into a growth furnace 2 by using a material guide plate 6, after the raw materials are melted into liquid, a hand wheel is rotated to rotate a lead screw 41, so that a nut seat 411 drives the material guide plate 6 to move on a discharge rail 5, the material guide plate 6 can slowly move by using a transmission mode of the lead screw 41, the moving stability of the material guide plate 6 is improved, the nut seat 411 and the material guide plate 6 are connected by a connecting rod, and when the inclination direction of the lead screw 41 has an error with the discharge rail 5 in the installation process, the connecting rod is used for moving, so that the material guide plate 6 can be ensured to stably move all the time; in the moving process of the material guide plate 6, the moving distance of the indicating block 92 can be read through the graduated scale 91, and the growth length of the crystal can be known; and finally, the liquid is slowly cooled and solidified, the crystal is formed, in the process, the crucible 3 is inclined or horizontally arranged, and after the raw materials are melted, the raw materials cannot be completely accumulated on the bottom wall of the crucible 3, so that the conditions that the pressure at the bottom of the crucible 3 is too large to bear, the crucible 3 is deformed and the liquid leakage is caused in the growth process of the oversized crystal are improved.
In the case of the example 2, the following examples are given,
referring to fig. 3, the present embodiment is different from embodiment 1 in that the driving member 43 is provided as a driving motor, the driving motor is fixedly mounted on the frame 1, the first gear 11 is coaxially fixed on an output shaft of the driving motor, the first gear 11 is in meshing transmission with the second gear 421, and the chain 7 is not provided in the present embodiment.
The implementation principle of the embodiment 2 is as follows: utilize driving motor drive worm gear mechanism 42 to rotate, laborsaving convenience, and help guaranteeing the continuity that stock guide 6 removed, help the even growth of crystal, wherein, the lead car translation speed is 0.8~1.2 mm/h.
In the case of the example 3, the following examples are given,
referring to fig. 4, the difference between this embodiment and embodiments 1 and 2 lies in that a mounting plate 13 is rotatably connected to a frame 1, wherein a driving assembly 4, a discharging rail 5 and a growth furnace 2 are all mounted on the mounting plate 13, wherein a screw rod is rotatably connected to the mounting plate 13, the inclination angles of the growth furnace 2, the discharging rail 5 and a crucible 3 are consistent with the angle of the mounting plate 13, one side of the mounting plate 13 away from the growth furnace 2 is hinged to the frame 1, so as to realize the rotatable connection of the mounting plate 13 to the frame 1, wherein the angle range of the mounting plate 13 to the horizontal plane is [0 ° or 90 °), a hydraulic cylinder 20 is arranged on the frame 1, one end of the hydraulic cylinder 20 is hinged to one side of the mounting plate 13 close to the growth furnace 2, and the other end of the hydraulic cylinder 20 is hinged to the frame 1.
The implementation principle of the embodiment 3 is as follows: when the requirement on the growth length of the ultra-long crystal is different, the inclination angle of the mounting plate 13 is adjusted through the hydraulic cylinder 20, and then the inclination angle of the crucible 3 is changed, so that the inclination angle is the optimal angle for crystal growth, the phenomena of cracking and dislocation in the crystal growth process are reduced, and the quality of the crystal is improved.
Referring to fig. 5, an embodiment of the present application further discloses a crystal growth method, where crystal growth is performed by using the crystal growth apparatus in any of the above embodiments, and the growth method includes the following steps:
(1) mixing raw materials for growing crystals and pouring the mixture into an inclined or horizontal crucible 3;
(2) moving the material guide plate 6 to enable the crucible 3 to enter a heating area for heating and melting;
(3) after the raw materials are melted into liquid, the material guide plate 6 is moved, so that the crucible 3 is slowly far away from the heating area, the liquid is gradually cooled and solidified, and crystals are formed.
The working principle of the crystal growth method is as follows: the raw materials for growing the crystal are mixed and poured into the inclined or horizontal crucible 3, then the material guide plate 6 is moved, the crucible 3 enters a heating area to be heated and melted, after the raw materials are melted into liquid, the material guide plate 6 is moved, the crucible 3 is slowly far away from the heating area, and the liquid is gradually cooled and solidified, so that the crystal is formed.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (10)
1. A crystal growth apparatus, characterized by: including frame (1), be provided with growth furnace (2) on frame (1), the inside of growth furnace (2) is formed with the zone of heating that is used for building the crystal growth environment, discharge gate (21) have been seted up on growth furnace (2), it is provided with crucible (3) to slide on frame (1), crucible (3) are long tubular, just crucible (3) are slope or level setting, the opening of crucible (3) is towards growth furnace (2) and with discharge gate (21) grafting cooperation of sliding, just the direction of sliding of crucible (3) is parallel with self length direction, be provided with drive assembly (4) that are used for driving crucible (3) to slide on frame (1).
2. The crystal growth apparatus of claim 1, wherein: frame (1) slopes to be provided with ejection of compact track (5), the incline direction of ejection of compact track (5) is parallel with the incline direction of crucible (3), just the higher side of ejection of compact track (5) is linked together with discharge gate (21), ejection of compact track (5) internal slipping is provided with stock guide (6), crucible (3) are fixed on stock guide (6), drive assembly (4) drive stock guide (6) slide.
3. The crystal growth apparatus of claim 2, wherein: the drive assembly (4) comprises:
the screw rod (41) is obliquely arranged, the oblique direction of the screw rod is parallel to that of the discharging rail (5), and the screw rod is rotationally connected with the rack (1);
a worm gear mechanism (42) coaxially fixed with the lead screw (41);
a driving piece (43) arranged on the frame (1) and connected with a worm in the worm gear mechanism (42) in a transmission way,
the screw rod (41) is connected with a nut seat (411) in a threaded mode, and the material guide plate (6) is fixedly connected with the nut seat (411).
4. The crystal growth apparatus of claim 3, wherein: the lead screw nut is characterized in that a guide rod (12) is obliquely arranged on the rack (1), the oblique direction of the guide rod (12) is parallel to the oblique direction of the lead screw (41), a guide groove (81) is formed in the nut seat (411), and the guide rod (12) is in inserted connection with the guide groove (81) in a sliding fit mode.
5. The crystal growth apparatus of claim 3, wherein: the driving piece (43) is arranged as a hand wheel, a first gear (11) is connected to the frame (1) in a rotating mode, a second gear (421) is coaxially fixed to the end portion of a worm in the worm gear mechanism (42), a chain (7) is arranged on the first gear (11) and the second gear (421) in a winding mode, and the hand wheel drives the first gear (11) to rotate.
6. The crystal growth apparatus of claim 3, wherein: the driving piece (43) is set as a driving motor, and the driving motor is in transmission connection with the worm and gear mechanism (42).
7. The crystal growth apparatus of claim 2, wherein: the automatic material guide device is characterized in that an indicating piece is arranged on the rack (1) in a lifting mode, a graduated scale (91) is arranged on the rack (1), scales of the graduated scale (91) are distributed in the vertical direction, the indicating piece used for indicating the scales on the graduated scale (91) is arranged on the rack (1) in the lifting mode, a connecting rope (10) is connected to the indicating piece and the material guide plate (6), the length direction of one side, close to the material guide plate (6), of the connecting rope (10) is parallel to the sliding direction of the material guide plate (6), and when the material guide plate (6) moves to one side far away from the material outlet (21), the indicating piece descends; when the material guide plate (6) moves close to one side of the discharge hole (21), the indicating piece rises.
8. The crystal growth apparatus of claim 2, wherein: be provided with mounting panel (13) on frame (1), drive assembly (4), ejection of compact track (5) and growth furnace (2) are all installed on mounting panel (13), the one end that growth furnace (2) were kept away from in mounting panel (13) rotates with frame (1) and is connected, be provided with in frame (1) and be used for driving mounting panel (13) pivoted and rotate the piece, mounting panel (13) are [0 °,90 ° with the angle range of horizontal plane.
9. A crystal growth method, characterized by: the crystal growth apparatus as defined in any one of claims 1 to 8, wherein the crystal growth method comprises the steps of:
(1) mixing the raw materials for growing the ultra-long crystal and pouring the mixture into an inclined or horizontal crucible (3);
(2) moving the material guide plate (6) to move the crucible (3) into the heating area;
(3) the heating area melts the raw materials into liquid, then the crucible (3) is slowly moved out of the heating area by the material guide plate (6), and the liquid is cooled and solidified to form crystals.
10. A crystal growth method according to claim 9, characterized in that: and (4) in the moving process of the material guide plate (6) in the step (3), reading the moving distance of the material guide plate (6) through the indicating piece, and obtaining the growth length of the crystal.
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| Application Number | Priority Date | Filing Date | Title |
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| CN102797037A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot, manufacturing method thereof and solar cell |
| CN204111917U (en) * | 2014-08-21 | 2015-01-21 | 杭州慧翔电液技术开发有限公司 | A kind of polycrystalline ingot furnace surveys long brilliant device automatically |
| CN109487330A (en) * | 2019-01-03 | 2019-03-19 | 无锡翌波晶体材料有限公司 | Crystal cross growth equipment and crystal cross growth method |
| CN111005062A (en) * | 2019-12-31 | 2020-04-14 | 惠磊光电科技(上海)有限公司 | Crystal growth device |
| CN211005717U (en) * | 2019-11-28 | 2020-07-14 | 珠海鼎泰芯源晶体有限公司 | Crystal growth device |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102797037A (en) * | 2011-05-26 | 2012-11-28 | 浙江思博恩新材料科技有限公司 | Polycrystalline silicon ingot, manufacturing method thereof and solar cell |
| CN204111917U (en) * | 2014-08-21 | 2015-01-21 | 杭州慧翔电液技术开发有限公司 | A kind of polycrystalline ingot furnace surveys long brilliant device automatically |
| CN109487330A (en) * | 2019-01-03 | 2019-03-19 | 无锡翌波晶体材料有限公司 | Crystal cross growth equipment and crystal cross growth method |
| CN211005717U (en) * | 2019-11-28 | 2020-07-14 | 珠海鼎泰芯源晶体有限公司 | Crystal growth device |
| CN111005062A (en) * | 2019-12-31 | 2020-04-14 | 惠磊光电科技(上海)有限公司 | Crystal growth device |
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