CN114400267A - Photoelectric detector integrated with double absorption regions and preparation method thereof - Google Patents
Photoelectric detector integrated with double absorption regions and preparation method thereof Download PDFInfo
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Abstract
The invention relates to the field of integrated chips, and discloses a photoelectric detector integrated with double absorption regions and a preparation method thereof, wherein the photoelectric detector comprises a substrate, a second absorption active region, a light transmission waveguide region and a first absorption active region which are arranged from bottom to top; a first P + + doped region, a first P + doped region, a first intrinsic I region, a first N + doped region and a first N + + doped region are transversely and sequentially arranged in the first absorption active region, and the first P + + doped region is electrically connected with the first metal electrode; a second P + + doped region, a second P + doped region, a second intrinsic I region, a second N + doped region and a second N + + doped region are transversely and sequentially arranged in the second absorption active region, and the second P + + doped region is electrically connected with the second metal electrode; the first N + + doped region and the second N + + doped region are electrically connected through a metal via. The photoelectric detector has two different light absorption regions, can detect high-power and multiband optical signals, and has high responsivity and large photoelectric response bandwidth.
Description
Technical Field
The invention relates to the field of integrated chips, in particular to a photoelectric detector integrated with double absorption regions and a preparation method thereof.
Background
Photo-electric detectors are commonly used to detect light or other electromagnetic energy. At present, the detector has important practical application in the aspects of wired or wireless communication, sensing, monitoring, national security and the like. Particularly in an opto-electronic integrated chip, an opto-electric detector is one of the receiving-end core chips, which converts high-speed optical data into an electric signal. The photo-electric detector generally uses the thermoelectric effect, the photoelectric effect, and the electric absorption effect of the material to detect the intensity of light. In the optical communication band, the main material systems based on the prior art are III-V materials, germanium (Ge) and silicon (Si). Although detectors based on these material systems have good performance and are commercially available, they still have many disadvantages, such as single optical response wavelength, large device size, complex manufacturing process, high cost, etc.
Disclosure of Invention
The purpose of the invention is as follows: aiming at the problems in the prior art, the invention provides a photoelectric detector integrated with double absorption regions and a preparation method thereof.
The technical scheme is as follows: the invention provides a photoelectric detector integrated with double absorption regions, which comprises a substrate, a second absorption active region, a light transmission waveguide region and a first absorption active region, wherein the substrate, the second absorption active region, the light transmission waveguide region and the first absorption active region are sequentially arranged from bottom to top; the first absorption active region comprises a first P + + doped region, a first P + doped region, an undoped first intrinsic I region, a first N + doped region and a first N + + doped region which are transversely arranged in sequence, and the first P + + doped region is electrically connected with the first metal electrode; the second absorption active region comprises a second P + + doped region, a second P + doped region, an undoped second intrinsic I region, a second N + doped region and a second N + + doped region which are transversely arranged in sequence, and the second P + + doped region is electrically connected with the second metal electrode; the first N + + doped region and the second N + + doped region are electrically connected through a metal through hole between the first N + + doped region and the second N + + doped region.
Furthermore, a groove structure is arranged in the middle of the optical transmission waveguide area. The refractive index (mode effective index) of an optical waveguide is generally determined by the intrinsic refractive index of the material and the structure of the waveguide; generally speaking, tuning the waveguide structure is a commonly used effective approach, which may help to design the coupling efficiency between waveguides; for the groove structure in the application, the adjustment of the refractive index can be realized by changing the depth and the width of the groove, the width and the thickness of the section of the external optical waveguide and other parameters; the groove structure has the advantages that the dimension for adjusting the refractive index is increased, and more adjustment parameters are available to realize the efficient optical coupling of the optical transmission waveguide region and the first light absorption region and the second light absorption region.
Preferably, the width w1 of the first intrinsic I region is 50-500 nm; and/or the width w2 of the second intrinsic I region is 50-500 nm. The widths of the first intrinsic I region and the second intrinsic I region can affect the 3dB bandwidth and the detection quantum efficiency of the detector, the 3dB bandwidth is reduced due to too wide widths, the detection quantum efficiency is reduced due to too narrow widths, and the appropriate 3dB bandwidth and the detection quantum efficiency can be obtained by controlling the widths of the first intrinsic I region and the second intrinsic I region to be 50-500 nm. Preferably 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm, 450nm, 500nm, etc., but not limited to the recited values, and other values not recited within the range of the values are also applicable.
Further, a portion of the first P + doped region, the first intrinsic I region, and a portion of the first N + doped region form a first light absorption region; a portion of the second P + doped region, the second intrinsic I region, and a portion of the second N + doped region form a second light absorption region; the light transmission waveguide region is located between the first light absorption region and the second light absorption region.
Preferably, the distance h1 between the light transmission waveguide region and the first light absorption region is 50-400 nm; and/or the distance h2 between the light transmission waveguide region and the second light absorption region is 50-400 nm. The distance between the optical transmission waveguide region and the first light absorption region and the distance between the optical transmission waveguide region and the second light absorption region can affect the detection efficiency and the optical power detection range of the detector, too large distance causes less energy when light is coupled into the absorption region, the detection efficiency is reduced, too small distance causes the high power incidence, the light absorption region is easy to saturate, the detection optical power range table is reduced, and the distance between the optical transmission waveguide region and the first light absorption region is controlled to be 50-400 nm, which is beneficial to realizing high efficiency and high optical power detection, preferably 50nm, 100nm, 150nm, 200nm, 250nm, 300nm, 350nm, 400nm and the like, but not only the values are limited to the enumerated values, and other values in the numerical value range are also applicable.
Preferably, the doping concentrations of the first P + + doping region, the second P + + doping region, the first N + + doping region, and the second N + + doping region are 1 × 1020/cm3~8×1020/cm3(ii) a And/or the doping concentrations of the first P + doping region, the second P + doping region, the first N + doping region and the second N + doping region are respectively 1 × 1018/cm3~6×1018/cm3。
Preferably, the first intrinsic I region and the second intrinsic I region are light absorbing materials with different light absorption bands. Since different materials correspond to different light absorption region ranges, this is determined by the band structure of the materials; for example, the light absorption waveguide of general silicon can only reach 1.1um or below, and is larger than 1.1um of light, and the silicon material generally does not absorb any more or has low absorption efficiency; the germanium material can absorb light with the wavelength of 1.6um or below; but the germanium material has lower absorption efficiency below 1um compared with the silicon material, so light below 1um is preferentially absorbed by the silicon for detection; light above 1um is preferentially detected for absorption by germanium. The configuration of different absorption wave bands in first, the second light absorption district in this application can realize surveying wide spectrum light signal.
Preferably, the first intrinsic I region is any one of the following light absorbing materials: germanium, germanium-silicon alloys, group III-V materials, or group III-V material alloys; and/or the second intrinsic I region is any one of the following light absorption materials: silicon or perovskite.
Preferably, the substrate is a silicon-on-insulator (SOI) formed by depositing silicon dioxide on a silicon substrate; and/or the material of the optical transmission waveguide region is silicon nitride, aluminum nitride or lithium niobate.
The invention also provides a preparation method of the photoelectric detector integrated with the double absorption regions, which comprises the following steps: (1) depositing an insulating layer on a substrate to form a base, depositing a second absorption active area film on the insulating layer of the base, and forming a ridge type germanium waveguide structure after photoetching and etching; (2) carrying out P + + doping, N + + doping, P + doping and N + doping on the ridge type germanium waveguide structure in sequence to form a second P + + doping region, a second N + + doping region, a second P + doping region and a second N + doping region respectively, reserving an undoped second intrinsic I region and forming a second absorption active region; (3) depositing an insulating layer and carrying out planarization treatment, and after photoetching and windowing, depositing a light transmission waveguide area material at a proper position to form a light transmission waveguide area; (4) depositing an insulating layer, and depositing a metal through hole material after photoetching and etching to form a metal through hole; (5) depositing a first absorption active area material, and forming a ridge type silicon waveguide structure after photoetching and etching; (6) sequentially carrying out P + + doping, N + + doping, P + doping and N + doping on the ridge type silicon waveguide structure to respectively form a first P + + doping area, a first N + + doping area, a first P + doping area and a first N + doping area, and reserving a first intrinsic I area which is not doped to form a first absorption active area; (7) and photoetching a window, and depositing a first metal electrode and a second metal electrode on the first P + + doped region and the second P + + doped region respectively.
Has the advantages that: in the photoelectric detector integrated with the double absorption regions, light passes through the light transmission waveguide region and is respectively coupled to the first light absorption region and the second light absorption region, and the wide-spectrum optical signal can be detected due to the configuration of different absorption wave bands in the first light absorption region and the second light absorption region; the active region structure of the first light absorption region and the second light absorption region is PNNP, and bias voltage is loaded between the two P through the first metal electrode and the second metal electrode, so that photo-generated carriers are extracted, and an electric signal is generated.
The photoelectric detector can enable the first light absorption area and the second light absorption area to respectively and independently work through the positive and negative of bias voltage (the working principle is shown in the abstract attached drawing in detail), and the integration can be realized. The working principle is as follows:
the photoelectric detector is a structure formed by connecting 2 PINs and NIPs in series through N; when a voltage is applied between 2P, 2 PN junctions will necessarily be one operating on forward bias and one on reverse bias (PN junction rationale); the detector can extract photon-generated carriers to realize signal detection only when working in a reverse bias state; for example, when the wavelength of incident light is λ 1, coupling to the first light absorption region requires the first PIN junction to operate in reverse bias, and the second PIN junction operates in forward bias (detection cannot be achieved); when the wavelength of the incident light is λ 2, coupling to the second light absorption region requires the second PIN junction to operate in reverse bias (by adjusting voltage V)BImplementation), then the first PIN junction will operate forward biased (no probing can be implemented); and to realize the reverse bias work of the first PIN junction and the second PIN junction respectively, only the voltage difference loaded between 2P types needs to be adjusted.
Drawings
FIG. 1 is a schematic diagram of a photodetector integrated with a double absorption region according to the present invention;
fig. 2 is a schematic diagram of the operating principle of a photodetector integrated with a double absorption region.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings.
The embodiment provides a photoelectric detector integrated with double absorption regions, which comprises a substrate 1, a second absorption active region, a light transmission waveguide region 2 and a first absorption active region which are arranged from bottom to top in sequence.
The base 1 is a silicon-on-insulator SOI formed by depositing silicon dioxide 102 on a silicon substrate 101;
the second absorption active region comprises a second P + + doped region 9, a second P + doped region 10, an undoped second intrinsic I region 11, a second N + doped region 12 and a second N + + doped region 13 which are transversely arranged in sequence, and the second P + + doped region 9 is electrically connected with a second metal electrode 14; a portion of the second P + doped region 10, the second intrinsic I region 11 and a portion of the second N + doped region 12 form a second light absorption region.
Wherein, the doping concentration of the second P + + doping region 9 and the second N + + doping region 13 are both 1 × 1020/cm3~8×1020/cm3(ii) a The doping concentrations of the second P + doping region 10 and the second N + doping region 12 are both 1 × 1018/cm3~6×1018/cm3. The second intrinsic I region 11 is made of silicon material and has a width w2 of 50-500 nm.
The material of the optical transmission waveguide region 2 is silicon nitride. In order to realize efficient optical coupling between the optical transmission waveguide region 2 and the first light absorption region and the second light absorption region, the optical transmission waveguide region 2 in this embodiment is further provided with a groove structure capable of adjusting the refractive index.
The first absorption active region comprises a first P + + doped region 3, a first P + doped region 4, an undoped first intrinsic I region 5, a first N + doped region 6 and a first N + + doped region 7 which are transversely arranged in sequence, and the first P + + doped region 3 is electrically connected with a first metal electrode 8; a portion of the first P + doped region 4, the first intrinsic I region 5 and a portion of the first N + doped region 6 form a first light absorption region.
Wherein, the doping concentrations of the first P + + doping region 3 and the first N + + doping region 7 are both 1 × 1020/cm3~8×1020/cm3(ii) a The doping concentrations of the first P + doping region 4 and the first N + doping region 6 are both 11018/cm3~6×1018/cm3. The first intrinsic I region 5 is a germanium material and has a width w2 of 50-500 nm.
The first N + + doped region 7 and the second N + + doped region 13 are electrically connected by a metal via 15 therebetween.
The distance h1 between the light transmission waveguide region 2 and the first light absorption region is 50-400 nm; the distance h2 between the first light absorption region and the second light absorption region is 50-400 nm.
The working principle of the above-mentioned photodetector integrated with a double absorption region is shown in fig. 2:
the photoelectric detector is formed by connecting 2 PINs and NIPs in series through N; when a voltage is applied between 2P, 2 PN junctions will necessarily be one operating on forward bias and one on reverse bias (PN junction rationale); the detector can extract photon-generated carriers to realize signal detection only when working in a reverse bias state; for example, when the wavelength of incident light is λ 1, coupling to the first light absorption region requires the first PIN junction to operate in reverse bias, and the second PIN junction operates in forward bias (detection cannot be achieved); when the wavelength of incident light is lambda 2, the light is coupled to the second light absorption area, and the second PIN junction is required to work in reverse bias, so that the first PIN junction works in forward bias (detection cannot be realized); and to realize the reverse bias work of the first PIN junction and the second PIN junction respectively, only the voltage difference loaded between 2P types needs to be adjusted.
The preparation method of the photoelectric detector integrated with the double absorption regions comprises the following steps:
(1) preparing a high-quality germanium film, namely a second absorption active region film, on a silicon-on-insulator (SOI) substrate 1 by using a Plasma Enhanced Chemical Vapor Deposition (PECVD) method; photoetching the deposited germanium film area, realizing pattern transfer and then etching to form a ridge type germanium waveguide structure;
(2) carrying out P + + doping, N + + doping, P + doping and N + doping on the ridge type germanium waveguide structure in sequence to form a second P + + doping region 9, a second N + + doping region 13, a second P + doping region 10 and a second N + doping region 12 respectively, reserving an undoped germanium intrinsic region, namely a second intrinsic I region 11, and forming a second absorption active region;
(3) depositing a silicon dioxide material layer, and realizing planarization treatment by utilizing a chemical mechanical polishing technology; photoetching a window, preparing a silicon nitride film material at a proper position by using a Low Pressure Chemical Vapor Deposition (LPCVD) method, and etching a groove structure on the silicon nitride film material to form an optical transmission waveguide area 2;
(4) depositing a silicon dioxide material layer; depositing a metal through hole material after photoetching and etching to form a metal through hole 15;
(5) preparing a polysilicon material by using Plasma Enhanced Chemical Vapor Deposition (PECVD), namely a first absorption active region material; photoetching the deposited polysilicon region to realize pattern transfer and etching to form a ridge type silicon waveguide structure;
(6) carrying out P + + doping, N + + doping, P + doping and N + doping on the ridge type silicon waveguide structure in sequence to form a first P + + doping region 3, a first N + + doping region 7, a first P + doping region 4 and a first N + doping region 6 respectively, reserving an undoped silicon intrinsic region structure, namely a first intrinsic I region 5, and forming a first absorption active region;
(7) and photoetching windows, and depositing metal materials on the first P + + doped region 3 and the second P + + doped region 9 respectively to form a first metal electrode 8 and a second metal electrode 14.
The above embodiments are merely illustrative of the technical concepts and features of the present invention, and the purpose of the embodiments is to enable those skilled in the art to understand the contents of the present invention and implement the present invention, and not to limit the protection scope of the present invention. All equivalent changes and modifications made according to the spirit of the present invention should be covered within the protection scope of the present invention.
Claims (10)
1. A photoelectric detector integrated with double absorption regions is characterized by comprising a substrate (1), a second absorption active region, a light transmission waveguide region (2) and a first absorption active region which are sequentially arranged from bottom to top;
the first absorption active region comprises a first P + + doping region (3), a first P + doping region (4), an undoped first intrinsic I region (5), a first N + doping region (6) and a first N + + doping region (7) which are transversely arranged in sequence, and the first P + + doping region (3) is electrically connected with a first metal electrode (8);
the second absorption active region comprises a second P + + doped region (9), a second P + doped region (10), an undoped second intrinsic I region (11), a second N + doped region (12) and a second N + + doped region (13), wherein the second P + + doped region (9) is electrically connected with a second metal electrode (14);
the first N + + doped region (7) and the second N + + doped region (13) are electrically connected through a metal through hole (15) between the first N + + doped region and the second N + + doped region.
2. The photodetector as claimed in claim 1, wherein the light transmission waveguide region (2) has a groove structure in the middle.
3. The photodetector as claimed in claim 1, characterized in that the width w1 of the first intrinsic I region (5) is 50 to 500 nm;
and/or the width w2 of the second intrinsic I region (11) is 50-500 nm.
4. The photodetector integrated with a double absorption region according to claim 1, characterized in that part of said first P + doped region (4), said first intrinsic I region (5) and part of said first N + doped region (6) form a first light absorption region; -a portion of the second P + doped region (10), the second intrinsic I region (11) and a portion of the second N + doped region (12) form a second light absorption region; the light transmission waveguide region (2) is located between the first light absorption region and the second light absorption region.
5. The photodetector as claimed in claim 4, wherein the distance h1 between the light transmission waveguide region (2) and the first light absorption region is 50-400 nm;
and/or the distance h2 between the light transmission waveguide region (2) and the second light absorption region is 50-400 nm.
6. The photodetector as claimed in claim 1, wherein the doping concentrations of said first P + + doped region (3), said second P + + doped region (9), said first N + + doped region (7) and said second N + + doped region (13) are respectively 1 x 1020/cm3~8×1020/cm3；
And/or the doping concentrations of the first P + doping region (4), the second P + doping region (10), the first N + doping region (6) and the second N + doping region (12) are respectively 1 x 1018/cm3~6×1018/cm3。
7. The photodetector as claimed in any one of claims 1 to 5, characterised in that the first intrinsic I-region (5) and the second intrinsic I-region (11) are of a light absorbing material with a different light absorption band.
8. The photodetector as claimed in claim 7, characterised in that the first intrinsic I-region (5) is of any one of the following light-absorbing materials: germanium, germanium-silicon alloys, group III-V materials, or group III-V material alloys;
and/or the second intrinsic I region (11) is a light absorbing material selected from any one of the following: silicon or perovskite.
9. The photodetector integrated with a double absorption region according to any one of claims 1 to 5, characterized in that said base (1) is a silicon-on-insulator, SOI, formed by depositing silicon dioxide (102) on a silicon substrate (101);
and/or the material of the optical transmission waveguide region (2) is silicon nitride, aluminum nitride or lithium niobate.
10. The method for fabricating a photodetector integrated with a double absorption region according to any one of claims 1 to 9, wherein the method for fabricating is as follows:
(1) depositing an insulating layer (102) on a substrate (101) to form a base (1), depositing a second absorption active area film on the insulating layer (102) of the base (1), and forming a ridge waveguide structure after photoetching and etching;
(2) p + + doping, N + + doping, P + doping and N + doping are sequentially carried out on the ridge waveguide structure, a second P + + doping region (9), a second N + + doping region (13), a second P + doping region (10) and a second N + doping region (12) are respectively formed, an undoped second intrinsic I region (11) is reserved, and a second absorption active region is formed;
(3) depositing an insulating layer and carrying out planarization treatment, and after photoetching and windowing, depositing a light transmission waveguide area material at a proper position to form a light transmission waveguide area (2);
(4) depositing an insulating layer, and depositing a metal through hole material after photoetching and etching to form a metal through hole (15);
(5) depositing a first absorption active area material, and forming a ridge waveguide structure after photoetching and etching;
(6) p + + doping, N + + doping, P + doping and N + doping are sequentially carried out on the ridge waveguide structure, a first P + + doping area (3), a first N + + doping area (7), a first P + doping area (4) and a first N + doping area (6) are respectively formed, an undoped first intrinsic I area (5) is reserved, and a first absorption active area is formed;
(7) and photoetching windows, and depositing a first metal electrode (8) and a second metal electrode (14) on the first P + + doped region (3) and the second P + + doped region (9) respectively.
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Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070104410A1 (en) * | 2005-11-08 | 2007-05-10 | Massachusetts Institute Of Technology | Integrated waveguide photodetector apparatus with matching propagation constants and related coupling methods |
| CN105655417A (en) * | 2016-02-29 | 2016-06-08 | 华为技术有限公司 | Optical waveguide detector and optical module |
| EP3038167A1 (en) * | 2014-12-22 | 2016-06-29 | IMEC vzw | Integrated avalanche germanium photodetector |
| US20170278987A1 (en) * | 2009-08-18 | 2017-09-28 | U.S. Army Research Laboratory Attn: Rdrl-Loc-I | Photodetector using resonance and related method |
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| WO2019218002A1 (en) * | 2018-05-14 | 2019-11-21 | The University Of Melbourne | A photodetector |
| CN110730917A (en) * | 2017-06-08 | 2020-01-24 | 卢克斯特拉有限公司 | Method and system for integrated photodetector with configured emission for bandwidth boosting and selective illumination of adaptive junction distribution |
| CN110911507A (en) * | 2019-11-19 | 2020-03-24 | 华中科技大学 | Perpendicular incidence type silicon-based germanium photoelectric detector based on medium super surface |
| CN110941108A (en) * | 2019-12-30 | 2020-03-31 | 杭州芯耘光电科技有限公司 | Doping structure and optical modulator |
| CN112201723A (en) * | 2019-07-08 | 2021-01-08 | 上海新微技术研发中心有限公司 | Waveguide type photoelectric detector and preparation method thereof |
| CN112331744A (en) * | 2021-01-06 | 2021-02-05 | 武汉光谷信息光电子创新中心有限公司 | Preparation method of photoelectric detector |
| US20210111289A1 (en) * | 2019-10-11 | 2021-04-15 | Innolight Technology (Suzhou) Ltd. | Waveguide photoelectric detector |
-
2021
- 2021-12-30 CN CN202111647756.1A patent/CN114400267B/en active Active
- 2021-12-30 CN CN202311261674.2A patent/CN117334777A/en active Pending
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070104410A1 (en) * | 2005-11-08 | 2007-05-10 | Massachusetts Institute Of Technology | Integrated waveguide photodetector apparatus with matching propagation constants and related coupling methods |
| US20170278987A1 (en) * | 2009-08-18 | 2017-09-28 | U.S. Army Research Laboratory Attn: Rdrl-Loc-I | Photodetector using resonance and related method |
| EP3038167A1 (en) * | 2014-12-22 | 2016-06-29 | IMEC vzw | Integrated avalanche germanium photodetector |
| CN105655417A (en) * | 2016-02-29 | 2016-06-08 | 华为技术有限公司 | Optical waveguide detector and optical module |
| CN110730917A (en) * | 2017-06-08 | 2020-01-24 | 卢克斯特拉有限公司 | Method and system for integrated photodetector with configured emission for bandwidth boosting and selective illumination of adaptive junction distribution |
| CN108039390A (en) * | 2017-11-22 | 2018-05-15 | 天津大学 | Contactless protection ring single-photon avalanche diode and preparation method |
| WO2019218002A1 (en) * | 2018-05-14 | 2019-11-21 | The University Of Melbourne | A photodetector |
| CN112201723A (en) * | 2019-07-08 | 2021-01-08 | 上海新微技术研发中心有限公司 | Waveguide type photoelectric detector and preparation method thereof |
| US20210111289A1 (en) * | 2019-10-11 | 2021-04-15 | Innolight Technology (Suzhou) Ltd. | Waveguide photoelectric detector |
| CN110911507A (en) * | 2019-11-19 | 2020-03-24 | 华中科技大学 | Perpendicular incidence type silicon-based germanium photoelectric detector based on medium super surface |
| CN110941108A (en) * | 2019-12-30 | 2020-03-31 | 杭州芯耘光电科技有限公司 | Doping structure and optical modulator |
| CN112331744A (en) * | 2021-01-06 | 2021-02-05 | 武汉光谷信息光电子创新中心有限公司 | Preparation method of photoelectric detector |
Non-Patent Citations (2)
| Title |
|---|
| LAUGHTON, F.R. ET AL.: "Demonstration of the use of a two-photon absorption waveguide detector as an autocorrelator", 《IEE COLLOQUIUM ON `MEASUREMENTS ON OPTICAL DEVICES》 * |
| 马晓凯: "光通信波段光探测器的暗电流抑制与宽谱高速及大功率响应特性的研究", 《中国博士学位论文全文数据库 信息科技辑》 * |
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