CN114361318A - LED packaging structure capable of emitting light at large angle and packaging method thereof - Google Patents
LED packaging structure capable of emitting light at large angle and packaging method thereof Download PDFInfo
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- CN114361318A CN114361318A CN202210040357.7A CN202210040357A CN114361318A CN 114361318 A CN114361318 A CN 114361318A CN 202210040357 A CN202210040357 A CN 202210040357A CN 114361318 A CN114361318 A CN 114361318A
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Abstract
The invention provides a large-angle light-emitting LED packaging structure and a packaging method thereof. The LED packaging structure comprises a substrate, an LED light-emitting chip, a packaging resin layer and a dimming film layer. The LED light-emitting chip is arranged on the substrate and electrically connected with the substrate. The packaging resin layer is arranged on the substrate and covers the LED light-emitting chip. The dimming film layer is arranged above the packaging resin layer and covers the top or the upper surface of the substrate. The dimming film layer is prepared by mixing silica gel and titanium dioxide according to a certain proportion. Therefore, the LED packaging structure can increase the light emitting angle (close to 180 degrees or more) of the LED light emitting chip, and simultaneously timely adjust the central light intensity and reduce the focus or dazzle light.
Description
Technical Field
The invention relates to the technical field of semiconductor packaging, in particular to an LED packaging structure with a large divergence angle and a packaging method thereof.
Background
Because of the advantages of long service life, low power consumption, small volume, high reliability, good environmental protection and the like, the application field and the application range of the LED (also called as a light emitting diode, a chip, a wafer and the like) are continuously extended and expanded. LEDs have been the first of various light sources in various fields such as a light source of a backlight unit, a light source for general lighting or illumination, a light source of a night scene in a city, and the like.
In the existing LED backlight light emitting products, how to convert a point light source into a uniform surface light source is one of the research hotspots of the backlight LED products. As shown in FIG. 1, the light emitting angle a '(also called power angle, denoted as 2 θ) of the existing LED package structure 1' in the Mini LED backlight product1/2) Between 110 ° and 130 ° forming the LED light source with the strongest light at the center point, which can also be understood as a point light source. When the light source is used as a light emitting source of a Mini LED backlight product, a single-point focus is too bright, a chessboard-shaped single-point granular feeling is formed on the light emitting surface of the backlight product, the overall visual effect of the backlight product is influenced, and the light emitting color and the taste of the backlight product are poor.
Therefore, in the field of Mini LED backlight products, it is one of the problems to be actively solved by those skilled in the art how to increase the light emitting angle of the light emitting source and reduce the focus of the backlight product to form a surface light source with uniform overall visual effect.
Disclosure of Invention
In order to solve the problem of light emission after LED packaging in the Mini LED backlight product, the invention provides a large-angle light-emitting LED packaging structure and a packaging method thereof, which can increase the light-emitting angle (which can be nearly 180 degrees or more) of an LED light-emitting chip while realizing the packaging of the LED light-emitting chip, and timely adjust the intensity of central light and reduce focus or glare.
To achieve at least one of the above advantages or other advantages, an embodiment of the present invention provides a large angle LED package structure, which includes: the LED light-emitting module comprises a substrate, an LED light-emitting chip, a packaging resin layer and a dimming film layer. The substrate may also be referred to as a package support. The LED light-emitting chip is arranged on the substrate and electrically connected with the substrate. The packaging resin layer is arranged on the substrate and covers the LED light-emitting chip. The dimming film layer is arranged above the packaging resin layer and covers the top or the upper surface of the substrate.
The substrate may be a transparent substrate or a translucent substrate. Therefore, the lateral light emitting light rays of the LED light emitting chip to the periphery (or four side surfaces) of the substrate can be increased, and the lateral light output of the LED light emitting chip during light emitting is increased or decreased. In some embodiments, the substrate may be composed primarily of thermoplastic and copper to enhance the light transmission properties of the substrate. The cross section of the light-emitting surface of the substrate is regular or irregular, and the manufacturing process is facilitated. Such as square, circular or rectangular.
The light-emitting wavelength of the LED light-emitting chip is between 380nm and 780 nm. In other words, the LED packaging structure capable of emitting light at a large angle is suitable for packaging LED light-emitting chips in a visible light range.
And after the filling, the upper surface of the packaging resin is a plane and covers the LED light-emitting chip. The height of the encapsulating resin layer is 95-100% of the height or depth of the base in the substrate. In one embodiment, the encapsulating resin layer is transparent silicone. Therefore, the light emitting light of the LED light emitting chip can be increased.
The light modulation film layer is arranged above the packaging resin layer and covers the top or the upper surface of the base in the substrate. The outermost edge of the dimming film layer is spaced from the outermost edge of the base in the substrate. In other words, a projection plane of the top of the substrate in the horizontal direction is located in a projection plane of the light adjusting film in the horizontal direction. By such arrangement, the light leakage phenomenon caused by incomplete covering or covering of the top or the upper surface of the substrate (or the cup rim of the base) can be avoided. In some embodiments, the spacing between the outermost edge of the dimming film layer and the outermost edge of the base is between 20 μm and 50 μm.
The thickness of the light modulation film layer can be between 100 μm and 300 μm. The light-adjusting film layer can be made of silica gel and titanium dioxide (Ti 0)2Or titanium dioxide). Specifically, the light-adjusting film layer can be made of silica gel and titanium dioxide (Ti 0)2) Mixing the components according to a certain proportion. In some embodiments, the proportional concentration (or mass percentage) of the silica gel and the titanium dioxide may be 9: 1-6: 4, and the forward light intensity of the LED light emitting chip is adjusted by the component ratio of the dimming film layer. In a preferred embodiment, the ratio concentration of silica gel to titanium dioxide is 7: 3.
To achieve at least one of the advantages or other advantages, an embodiment of the invention provides a method for packaging a large-angle light emitting LED package structure. The packaging method comprises the following steps:
step S11: preparing a substrate
A substrate having a base is provided. The substrate may be a transparent substrate or a translucent substrate. The substrate is mainly composed of thermoplastic materials and copper, so that the light transmission performance of the substrate is improved. The base is positioned above the substrate and is approximately bowl-shaped as a whole. The bowl-shaped base can increase the light emitting light inside the substrate, so that the overall luminous performance of the LED packaging structure is improved.
Step S12: chip fixation
And the LED light-emitting chip is arranged in the base of the substrate and is electrically connected with the substrate. The LED light-emitting chip is arranged at the bottom of the bowl cup of the base and is connected with the electrode of the substrate through the connecting wire, so that the LED light-emitting chip is electrically conducted with the substrate. The connecting wires may be copper wires. The light-emitting wavelength of the LED light-emitting chip is between 380nm and 780 nm.
Step S13: resin package
And filling packaging resin into the bowl cup of the base of the substrate to cover the LED light-emitting chip, and forming a packaging resin layer above the LED light-emitting chip.
After filling, the upper surface of the encapsulating resin layer is a plane. The upper surface of the packaging resin layer is not higher than the cup mouth of the base. The height of the encapsulating resin layer is 95-100% of the height or depth of the base in the substrate. Preferably, the encapsulation resin is transparent silicone. Therefore, the light emitting light of the LED light emitting chip can be increased.
Step S14: lamination of light modulation film
And adhering the prepared light modulation film layer above the base in the substrate. Namely, the light modulation film layer is attached to the cup mouth of the bowl cup of the base and completely covers the top or the upper surface of the substrate. By such arrangement, the light leakage phenomenon caused by incomplete covering or covering of the top or the upper surface of the substrate (or the cup rim of the base) can be avoided.
The thickness of the light modulation film layer is between 100 μm and 300 μm. The light-adjusting film layer can be made of silica gel and titanium dioxide (Ti 0)2) Mixing the components according to a certain proportion. In some embodiments, the proportional concentration (or mass percentage) of the silica gel and the titanium dioxide may be 9: 1-6: 4, and the forward light intensity of the LED light emitting chip is adjusted by the component proportional concentration of the dimming film layer.
The outermost edge of the dimming film layer is spaced from the outermost edge of the base by a certain distance. In one embodiment, the distance between the outermost edge of the dimming film and the outermost edge of the base is between 20 μm and 50 μm.
Compared with the prior art, the LED packaging structure with large-angle light emission and the packaging method thereof provided by the invention at least have the following advantages:
1. when the LED light-emitting chip emits light forward, the forward light can be shielded through the dimming film layer, the output of forward light particles is reduced, and the side light-emitting light is increased. The strength and the weakness of the forward light particle output in the LED light-emitting chip can be adjusted by adjusting the thickness of the light adjusting film layer. Compared with the light-emitting angle (about 120 degrees) of the existing Mini LED backlight product, the LED packaging structure provided by the invention can greatly increase the light-emitting angle of the backlight product in a five-surface light-emitting mode (the top surface and the four side surfaces of the substrate) through the light-adjusting film layer. The light emission angle may be close to 180 ° or more.
2. The arrangement of the dimming film layer in the LED packaging structure can effectively reduce the forward luminous intensity of the LED luminous chip light source, and relieve or reduce the problems that the single-point focus of the LED light source is too bright and the glare is generated by the light emitting of a backlight product. That is, the overall light emitting performance, such as light emitting intensity, light emitting color, etc., of the backlight product containing the LED can be adjusted by adjusting the output intensity of the forward light of the LED.
3. The LED packaging structure capable of emitting light at a large angle increases the light emitting angle and the light emitting light or brightness of a single LED light source or lamp bead, so that the using number of the LED light sources or lamp beads is reduced, and the cost of the LED light-emitting display device is reduced.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of an LED package structure in the prior art;
FIG. 2 is a schematic perspective view of an LED package structure according to an embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of one embodiment of the LED package structure shown in FIG. 2;
FIG. 4 is a schematic diagram of light distribution variation when the thicknesses of the light modulation film layers in the LED package structure shown in FIG. 2 are different;
FIG. 5 is a schematic diagram of light distribution variation of the LED package structure shown in FIG. 2 when the light modulation film layers have different composition ratios;
FIG. 6 is a schematic view of a light emitting diode package structure according to the present invention;
FIG. 7 is a comparison graph of light distribution curves of the LED package structure of the present invention and the conventional LED package structure; and
fig. 8 is a flowchart illustrating an embodiment of a packaging method of an LED package structure according to the present invention.
Reference numerals:
1, 1' -LED packaging structure 10-substrate 12-base
20-LED light emitting chip 22-connecting wire 30-packaging resin layer
40-light modulation film layer a, a' -luminous angle H1-height
H2-depth L1-spacing
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc., indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Referring to fig. 2 and fig. 3, fig. 2 is a schematic perspective view of an LED package structure according to an embodiment of the present invention, and fig. 3 is a schematic cross-sectional view of the LED package structure shown in fig. 2.
To achieve at least one of the advantages or other advantages, an embodiment of the invention provides a large angle light emitting LED package structure 1, which includes: the light-emitting diode package comprises a substrate 10, an LED light-emitting chip 20, a packaging resin layer 30 and a dimming film layer 40. The substrate 10 may also be referred to as a package support. The LED light emitting chip 20 is disposed on the substrate 10 and electrically connected to the substrate 10. The encapsulating resin layer 30 is disposed on the substrate 10 and covers the LED light emitting chip 20. The light modulation film layer 40 is disposed above the encapsulation resin layer 30 and covers the top or upper surface of the substrate 10.
The substrate 10 may be a transparent substrate or a translucent substrate. Thus, the lateral light emitting rays of the LED light emitting chip 20 to the periphery (or four sides) of the substrate 10 can be increased, so as to increase or decrease the lateral light output when the LED light emitting chip 20 emits light. In some embodiments, the substrate 10 may be composed of a thermoplastic material and copper to improve the light transmission performance of the substrate 10. The thermoplastic material includes, but is not limited to, any one of glass or glass fiber, polyether sulfone-based composite material, polycyclohexyldimethylterephthalate composite material, and polyphthalamide (PPA; 1, 4-benzanedicarboxylic acid polymer with2-methyl-1,8-octanediamine and 1,9-nonanediamine PA 9T). In other embodiments, the material of the substrate 10 may include a thermosetting material, so that the substrate 10 is translucent or transparent, thereby improving the light transmittance of the substrate 10. The thermoset material includes but is not limited to SiO2And 2, 3-epoxypropyll.
The cross-sectional shape of the light-emitting surface of the substrate 10 may be regular or irregular, which is beneficial for processing. In some embodiments, the cross-sectional shape of the light emitting surface of the substrate 10 is a regular shape, such as a square, a circle, or a rectangle. Thus, it is beneficial to dispose the dimming film layer 40 on the substrate 10, such as the process is easy to operate. For example, the process of the dimming film 40 is more convenient. In a preferred embodiment, the cross-sectional shape of the light-emitting surface of the substrate 10 is square.
The substrate 10 may have a pedestal 12. The susceptor 12 is located above the substrate 10 and has a generally bowl-like shape as a whole. The cup-shaped base 12 can increase the light emitting light inside the substrate 10, thereby improving the overall light emitting performance of the LED package structure 1. The LED light emitting chip 20 is mounted on the base 12 and electrically connected to the substrate 10 through a connecting wire 22. The connecting wires 22 may be copper wires.
The light emitting wavelength of the LED light emitting chip 20 is between 380nm and 780 nm. In other words, the LED package structure 1 emitting light at a large angle is suitable for packaging the LED light emitting chip 20 in the visible light range. In a preferred embodiment, the LED light emitting chip 20 is a blue LED light emitting chip. The blue LED light emitting chip can cover the existing Mini LED backlight product. Further, the light-emitting wavelength of the blue light LED light-emitting chip is between 440nm and 470 nm.
The encapsulating resin layer 30 is filled in the base 12 of the substrate 10, covering the LED light emitting chip 20. After filling, the upper surface of the encapsulating resin layer 30 is flat. The height H1 of the encapsulating resin layer 30 is 95% to 100% of the height or depth H2 of the base 12 in the substrate 10. In the figure, H1 ═ H2 ≦ H2 (95% to 100%) or H1 ≦ H2. It is understood that the upper surface of the encapsulating resin layer 30 is lower than the upper surface or top of the base 12, or the upper surface of the encapsulating resin layer 30 is flush with the upper surface or top of the base 12. When the height H1 of the encapsulating resin layer 30 is less than the height or depth of the base 12 in the substrate 10, a layer of adhesive glue may be disposed above the encapsulating resin layer 30 when the dimming film layer 40 is applied. The height difference between the encapsulating resin layer 30 and the base 12 is small, and has little influence on the light exit angle and the light exit pattern of the LED light emitting chip 20.
In the illustrated example, the base 12 is generally bowl-shaped in its entirety. After filling, the upper surface of the encapsulating resin layer 30 is not higher than the rim of the bowl of the base 12. In the illustrated example, the upper surface of the encapsulating resin layer 30 is planar and flush with the rim of the bowl of the base 12 in the substrate 10. Preferably, the encapsulating resin layer 30 is transparent silicone. Thereby, the light emitting of the LED light emitting chip 20 can be increased.
The light modulating film layer 40 is disposed above the encapsulating resin layer 30 and covers the top or upper surface of the base 12 in the substrate 10. The main functions of the dimming film layer 40 are: the first step is to shield the forward light of the LED light emitting chip 20 and adjust the forward light emitting intensity of the LED light emitting chip 20. The reflection and refraction of light are increased, so that the quantity or the luminous intensity of the LED luminous chip 20 in the lateral direction of the substrate is increased, and the luminous angle of the LED luminous chip 20 is increased.
As can be seen from fig. 4, there is a certain correlation between the thickness of the dimming film layer 40 and the variation of the light output amount in the LED package structure 1. The thickness of the dimming film 40 can affect the light output of the LED light emitting chip 20. When the thickness of the dimming film 40 is thicker, the front surface (main light emitting surface) of the LED light emitting chip 20 is less prone to light emitting, and the central light intensity of the LED package structure 1 is weaker. On the contrary, when the thickness of the dimming film 40 is thinner, the central light intensity of the LED package structure 1 is stronger, and a point light source is easily formed. The thickness of the light modulation film layer 40 may be between 100 μm and 300 μm. When the LED light emitting chip 20 is a blue LED light emitting chip, the thickness of the light adjusting film layer 40 is between 150 μm and 250 μm.
In the illustrated example, the dimming film 40 is attached to the rim of the bowl of the base 12. The light modulating film 40 is slightly larger than the rim of the bowl of the base 12 in the substrate 10. In other words, a projection plane of the top of the substrate 10 in the horizontal direction is located in a projection plane of the dimming film layer 40 in the horizontal direction. With such an arrangement, the light leakage phenomenon caused by incomplete covering or covering of the top or upper surface of the substrate 10 (or the rim of the bowl of the base 12) can be avoided. It can be understood that there is a distance L1 between the outermost edge of the dimming film 40 and the outermost edge of the base 12.
The setting of the distance L1 is beneficial to the processing and preparation of the dimming film 40, so that the dimming film 40 can be ensured to completely cover the light-emitting surface of the substrate 10 after being pasted on the top of the substrate 10, and the light leakage on the front surface of the LED light-emitting chip 20 is avoided. In some embodiments, the spacing L1 between the outermost edge of the dimming film layer 40 and the outermost edge of the base 12 is between 20 μm and 50 μm. In a preferred embodiment, the distance L1 between the outermost edge of the dimming film 40 and the outermost edge of the base 12 is between 30 μm and 40 μm.
As can be seen from fig. 5, in the LED package structure 1, there is a certain correlation between the group distribution ratio of the dimming film layer 40 and the variation of the light output amount. The light-adjusting film layer 40 may be made of silica gel and titanium dioxide (Ti 0)2) And (4) forming. Specifically, the light-adjusting film layer 40 may be made of silica gel and titanium dioxide (Ti 0)2) Mixing the components according to a certain proportion. If the proportion of the titanium dioxide in the mixture of the silica gel and the titanium dioxide is higher, the light transmittance of the dimming film layer 40 is poorer, and L isThe lower the forward light intensity of the ED light emitting chip 20.
In some embodiments, the proportional concentration (or mass percentage) of the silica gel and the titanium dioxide in the dimming film layer 40 may be 9:1 to 6:4, and the forward light intensity of the LED light emitting chip 20 is adjusted by the component proportional concentration of the dimming film layer 40. For example, in a preferred embodiment, the concentration ratio of silica gel to titanium dioxide in the light-adjusting film layer 40 is 7:3, and the thickness is 200 μm.
As can be seen from fig. 4 and 5, the light emitting amount of the front surface of the LED light emitting chip 20 in the LED package structure 1 can be adjusted and controlled by the thickness of the dimming film 40 and the proportional concentration of the components (such as silica gel and titanium dioxide). For example, different processes are adopted, the thickness of the light-adjusting film layer 40 may be 50 μm, and the proportional concentration of silica gel and titanium dioxide is 4: 6.
In the LED package structure 1, after the LED light emitting chip 20 is fixed on the substrate 10 and connected to the substrate 10, the light adjusting film layer 40 blocks the forward light when the LED light emitting chip 20 emits the forward light, so that the output of the forward light particles can be reduced. The intensity and the weakness of the forward light particle output in the LED light emitting chip 20 can be adjusted by adjusting the thickness of the dimming film layer 40.
In the LED package structure 1, the light emitting amount of the front surface of the LED light emitting chip 20 can be adjusted and controlled by adjusting the thickness of the dimming film layer 40 and the proportional concentration of the silica gel and the titanium dioxide in the dimming film layer 40 individually or jointly.
In addition, the substrate 10 is a transparent substrate or a translucent substrate, which has a lateral light output all around. Titanium dioxide (Ti 0) in the light modulation film layer 402) The LED light-emitting chip has refraction and reflection performances, and can emit the shielded forward light particles from the peripheral side surface of the substrate 10 after reflection or refraction, so that the side output light of the LED light-emitting chip 20 is increased. Therefore, the LED light emitting chip 20 in the LED package structure 1 can realize five-sided light emission (four-sided light emission and top light emission) to increase the light emitting angle. As shown in fig. 6, the light emitting angle a of the LED light emitting chip 20 in the LED package structure 1 may be close to 180 ° or greater than 180 °.
Furthermore, the front shielding of the light-adjusting film layer 40 can weaken the central light intensity, thereby avoiding the central focus or single-point focus and glare phenomena caused by over-strong forward light. Referring to fig. 7, fig. 7 is a comparison graph of light type distribution curves of the LED package structure of the present invention and the conventional LED package structure. Compared with the existing LED packaging structure in the Mini LED backlight product, in the LED packaging structure 1, the LED light-emitting chip 20 can have a larger light-emitting angle when emitting light, and meanwhile, the light-emitting with weaker central light and low focus can be realized.
Referring to fig. 8 with reference to fig. 3, fig. 8 is a schematic flow chart illustrating an embodiment of a packaging method of an LED package structure according to the present invention.
To achieve at least one of the advantages or other advantages, an embodiment of the invention provides a method for packaging a large-angle light emitting LED package structure 1. The packaging method comprises the following steps:
step S11: preparing a substrate
A substrate 10 is provided having a pedestal 12. The substrate 10 may be a transparent substrate or a translucent substrate. Thus, the lateral light emitting rays of the LED light emitting chip 20 to the periphery (or four sides) of the substrate 10 can be increased, so as to increase or decrease the lateral light output when the LED light emitting chip 20 emits light. The substrate 10 may be mainly composed of a thermoplastic material and copper to improve the light transmission performance of the substrate 10. The substrate 10 may also be made of a thermosetting material.
The susceptor 12 is located above the substrate 10 and has a generally bowl-like shape as a whole. The cup-shaped base 12 can increase the light emitting light inside the substrate 10, thereby improving the overall light emitting performance of the LED package structure 1.
Step S12: chip fixation
The LED light emitting chip 20 is mounted in the base 12 of the substrate 10 and electrically connected to the substrate 10. The LED light emitting chip 20 is mounted on the bottom of the bowl of the base 12, and is connected to the electrode of the substrate 10 through the connecting wire 22, so as to electrically connect the LED light emitting chip 20 and the substrate 10. The connecting wires 22 may be copper wires.
The light emitting wavelength of the LED light emitting chip 20 is between 380nm and 780 nm. In other words, the packaging method of the large-angle light emitting LED package structure 1 is suitable for packaging the LED light emitting chip 20 in the visible light range.
Step S13: resin package
The base 12 of the substrate 10 is filled with an encapsulating resin to cover the LED light emitting chip 20, and an encapsulating resin layer 30 is formed on the LED light emitting chip 20.
After filling, the upper surface of the encapsulating resin layer 30 is flat. The upper surface of the encapsulating resin layer 30 is not higher than the rim of the bowl of the base 12. The height H1 of the encapsulating resin layer 30 is 95% to 100% of the height or depth H2 of the base 12 in the substrate 10. In the figure, H1 ═ H2 ≦ H2 (95% to 100%) or H1 ≦ H2. It is understood that the upper surface of the encapsulating resin layer 30 is lower than the upper surface or top of the base 12, or the upper surface of the encapsulating resin layer 30 is flush with the upper surface or top of the base 12. Preferably, the encapsulating resin layer 30 is transparent silicone. Thereby, the light emitting of the LED light emitting chip 20 can be increased.
Step S14: lamination of light modulation film
The prepared dimming film layer 40 is attached to the substrate 10 above the base 12. Namely, the dimming film 40 is attached to the cup mouth of the base 12 and completely covers the top or upper surface of the substrate 10. With such an arrangement, the light leakage phenomenon caused by incomplete covering or covering of the top or upper surface of the substrate 10 (or the rim of the bowl of the base 12) can be avoided.
In the example of fig. 3, a distance L1 is formed between the outermost edge of the dimming film 40 and the outermost edge of the base 12. In a preferred embodiment, the distance L1 between the outermost edge of the dimming film 40 and the outermost edge of the base 12 is between 20 μm and 50 μm.
The thickness of the light modulation film layer 40 is between 100 μm and 300 μm.
The light-adjusting film layer 40 may be made of silica gel and titanium dioxide (Ti 0)2) Mixing the components according to a certain proportion. In some embodiments, the proportional concentration of the silica gel and the titanium dioxide may be 9:1 to 6:4, and the light intensity of the forward light of the LED light emitting chip 20 is adjusted by the component proportional concentration of the dimming film layer 40.
Titanium dioxide (Ti 0) in the light modulation film layer 402) Has refraction and reflection performance, can reflect or refract the sheltered forward light particles to emit from the peripheral side surface of the substrate 10, and increases the side output of the LED light-emitting chip 20And (4) emitting light. Therefore, the LED light emitting chip 20 in the LED package structure 1 can realize five-sided light emission (four-sided light emission and top light emission) to increase the light emitting angle.
Although terms such as LED package structure, substrate, base, bowl, LED light emitting chip, encapsulating resin layer, dimming film layer, front, side, lateral, etc. are used more often herein, the possibility of using other terms is not excluded. These terms are used merely to more conveniently describe and explain the nature of the present invention; they are to be construed as being without limitation to any additional limitations that may be imposed by the spirit of the present invention.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (11)
1. A luminous LED packaging structure of wide-angle which characterized in that: the method comprises the following steps:
a substrate;
the LED light-emitting chip is arranged on the substrate and is electrically connected with the substrate;
the packaging resin layer is arranged on the substrate and covers the LED light-emitting chip; and
and the dimming film layer is arranged above the packaging resin layer and covers the top of the substrate.
2. The high angle light emitting LED package structure of claim 1, wherein: the substrate is a transparent substrate or a semitransparent substrate.
3. The high angle light emitting LED package structure of claim 1, wherein: the cross section of the light-emitting surface of the substrate is regular or irregular.
4. The high angle light emitting LED package structure of claim 1, wherein: the light-emitting wavelength of the LED light-emitting chip is 380 nm-780 nm.
5. The high angle light emitting LED package structure of claim 1, wherein: the packaging resin layer is transparent silica gel.
6. The high angle light emitting LED package structure of claim 1, wherein: the height of the resin containing layer is less than or equal to the depth of the base.
7. The high angle light emitting LED package structure of claim 1, wherein: the upper surface of the encapsulating resin layer is a plane.
8. The high angle light emitting LED package structure of claim 1, wherein: the dimming film layer is composed of silica gel and titanium dioxide.
9. The high angle light emitting LED package structure of claim 1, wherein: the thickness of the dimming film layer is 100-300 mu m.
10. The high angle light emitting LED package structure of claim 1, wherein: the outermost edge of the dimming film layer and the outermost edge of the top of the substrate are spaced from each other by a certain distance.
11. A packaging method of a large-angle luminous LED packaging structure is characterized in that: the packaging method comprises the following steps:
preparing a substrate: providing a substrate having a base;
chip fixing: installing an LED light-emitting chip in the base and electrically connecting the LED light-emitting chip with the substrate;
resin encapsulation: filling packaging resin into the base of the substrate, and forming a packaging resin layer above the LED light-emitting chip;
laminating the dimming film layer: and the prepared dimming film layer is attached above the base and covers the top of the substrate.
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Application publication date: 20220415 |