CN114300521B - Flexible display panel and manufacturing method thereof - Google Patents
Flexible display panel and manufacturing method thereof Download PDFInfo
- Publication number
- CN114300521B CN114300521B CN202111629444.8A CN202111629444A CN114300521B CN 114300521 B CN114300521 B CN 114300521B CN 202111629444 A CN202111629444 A CN 202111629444A CN 114300521 B CN114300521 B CN 114300521B
- Authority
- CN
- China
- Prior art keywords
- layer
- substrate
- electrode
- tft
- inorganic barrier
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000010410 layer Substances 0.000 claims abstract description 416
- 239000000758 substrate Substances 0.000 claims abstract description 191
- 239000002346 layers by function Substances 0.000 claims abstract description 40
- 230000004888 barrier function Effects 0.000 claims description 121
- 238000004806 packaging method and process Methods 0.000 claims description 23
- 238000000034 method Methods 0.000 claims description 22
- 238000005538 encapsulation Methods 0.000 abstract description 34
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 abstract description 33
- 239000001301 oxygen Substances 0.000 abstract description 33
- 229910052760 oxygen Inorganic materials 0.000 abstract description 33
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 33
- 238000005452 bending Methods 0.000 abstract description 30
- 230000008569 process Effects 0.000 description 14
- 239000003292 glue Substances 0.000 description 12
- 239000000463 material Substances 0.000 description 9
- 230000000903 blocking effect Effects 0.000 description 8
- 238000005229 chemical vapour deposition Methods 0.000 description 8
- 239000004642 Polyimide Substances 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 4
- 238000010586 diagram Methods 0.000 description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 4
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 4
- -1 polyethylene terephthalate Polymers 0.000 description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 description 4
- 239000005020 polyethylene terephthalate Substances 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- 239000004332 silver Substances 0.000 description 4
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- ZPZCREMGFMRIRR-UHFFFAOYSA-N molybdenum titanium Chemical compound [Ti].[Mo] ZPZCREMGFMRIRR-UHFFFAOYSA-N 0.000 description 3
- 238000002161 passivation Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 241001391944 Commicarpus scandens Species 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 229920006335 epoxy glue Polymers 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 238000000059 patterning Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 230000003190 augmentative effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 238000005240 physical vapour deposition Methods 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Landscapes
- Electroluminescent Light Sources (AREA)
Abstract
本申请提供了一种柔性显示面板及其制作方法。该柔性显示面板包括TFT基板、OLED基板及封装层。TFT基板包括第一柔性衬底，及设于第一柔性衬底上的TFT层。OLED基板包括第二柔性衬底、设于第二柔性衬底下的第一电极、设于第一电极下的OLED功能层，及设于OLED功能层下的第二电极；第二电极与TFT层连接。封装层设于TFT基板和OLED基板上，并包围OLED基板的四周，且封装层中具有暴露出第二柔性衬底的开口。即柔性显示面板的上下两侧可以通过第一柔性衬底和第二柔性衬底阻挡水氧，从而使封装层只需包围OLED基板的四周，阻挡侧面入侵的水氧，因此封装层中可以具有暴露出第二柔性衬底的开口，开口可以释放封装层的弯折应力，从而避免封装层断裂，使封装层能够有效阻隔水氧。
The present application provides a flexible display panel and a manufacturing method thereof. The flexible display panel includes a TFT substrate, an OLED substrate and an encapsulation layer. The TFT substrate includes a first flexible substrate and a TFT layer disposed on the first flexible substrate. The OLED substrate includes a second flexible substrate, a first electrode disposed under the second flexible substrate, an OLED functional layer disposed under the first electrode, and a second electrode disposed under the OLED functional layer; the second electrode is connected to the TFT layer. The encapsulation layer is disposed on the TFT substrate and the OLED substrate, and surrounds the four sides of the OLED substrate, and the encapsulation layer has an opening exposing the second flexible substrate. That is, the upper and lower sides of the flexible display panel can block water and oxygen through the first flexible substrate and the second flexible substrate, so that the encapsulation layer only needs to surround the four sides of the OLED substrate to block the water and oxygen invading from the side, so the encapsulation layer can have an opening exposing the second flexible substrate, and the opening can release the bending stress of the encapsulation layer, thereby avoiding the encapsulation layer from breaking, so that the encapsulation layer can effectively block water and oxygen.
Description
Technical Field
The application relates to the technical field of display devices, in particular to a flexible display panel and a manufacturing method thereof.
Background
The electroluminescent diode (OLED) has advantages of simple manufacturing process, low cost, high luminous efficiency, easy formation of flexible structure, low power consumption, high color saturation, wide viewing angle, etc., and the display technology using the electroluminescent diode has become an important display technology.
An OLED is a current-type light emitting device that mainly includes an anode, a cathode, and an OLED functional layer. The main working principle of the OLED is that the OLED functional layer emits light through carrier injection and recombination under the drive of an electric field formed by an anode and a cathode.
The flexible display panel in the prior art comprises a flexible substrate, a TFT substrate arranged on the flexible substrate, a plurality of OLED arranged on the TFT substrate, and a packaging layer arranged on the TFT substrate and the OLED and covering the OLED. The flexible display panel needs to be rolled or bent, even frequently bent, during use. However, with the increasing number of bending times, the packaging layer in the prior art cannot release stress in the bending process and is easy to break, so that water and oxygen cannot be effectively blocked.
Disclosure of Invention
The application provides a flexible display panel and a manufacturing method thereof, which are used for solving the problem that the packaging layer in the prior art cannot release stress in the bending process and is easy to break, so that water and oxygen cannot be effectively blocked.
In one aspect, the present application provides a flexible display panel comprising:
The TFT substrate comprises a first flexible substrate and a TFT layer arranged on the first flexible substrate;
The OLED substrate is arranged above the TFT substrate and comprises a second flexible substrate, a first electrode arranged below the second flexible substrate, an OLED functional layer arranged below the first electrode and a second electrode arranged below the OLED functional layer, wherein the second electrode is connected with the TFT layer;
The packaging layer is arranged on the TFT substrate and the OLED substrate, surrounds the periphery of the OLED substrate, and is provided with an opening exposing the second flexible substrate.
In some possible implementations, the first flexible substrate includes a first organic buffer layer, a first inorganic barrier layer disposed on the first organic buffer layer, a second organic buffer layer disposed on the first inorganic barrier layer, and a second inorganic barrier layer disposed on the second organic buffer layer.
In some possible implementations, the first inorganic barrier layer and the second inorganic barrier layer are high temperature dense film layers.
In some possible implementations, the first inorganic barrier layer has a plurality of first through holes therein exposing the first organic buffer layer, and the second organic buffer layer is further filled in the plurality of first through holes.
In some possible implementations, the second flexible substrate includes a third organic buffer layer, a third inorganic barrier layer disposed under the third organic buffer layer, a fourth organic buffer layer disposed under the third inorganic barrier layer, and a fourth inorganic barrier layer disposed under the fourth organic buffer layer.
In some possible implementations, the third inorganic barrier layer and the fourth inorganic barrier layer are high temperature dense film layers.
In some possible implementations, the third inorganic barrier layer has a plurality of second vias therein exposing the third organic buffer layer, the fourth organic buffer layer also filling in the plurality of second vias.
In some possible implementations, the OLED substrate further includes a pixel defining layer disposed under the first electrode, and a protrusion disposed under the pixel defining layer;
the OLED functional layer is located in the pixel definition layer, the second electrode is arranged below the pixel definition layer, and the protruding portion is located between the pixel definition layer and the second electrode.
In some possible implementations, the TFT substrate further includes a flat layer disposed on the TFT layer, and a landing electrode disposed on the flat layer;
The flat layer is provided with a via hole exposing the TFT layer, the lap-joint electrode passes through the via hole to be connected with the TFT layer, and the second electrode is connected with the lap-joint electrode.
On the other hand, the application also provides a manufacturing method of the flexible display panel, which comprises the following steps:
providing a first bearing plate, and manufacturing a first flexible substrate on the first bearing plate;
Manufacturing a TFT layer on the first flexible substrate to form a TFT substrate;
Providing a second bearing plate, and manufacturing a second flexible substrate on the second bearing plate;
Manufacturing a first electrode on the second flexible substrate, manufacturing an OLED functional layer on the first electrode, manufacturing a second electrode on the OLED functional layer, and stripping the second bearing plate to form an OLED substrate;
Attaching the TFT substrate and the OLED substrate in an alignment manner, and connecting the second electrode with the TFT layer;
Manufacturing a packaging layer on the TFT substrate and the OLED substrate, wherein the packaging layer surrounds the periphery of the OLED substrate, and an opening exposing the second flexible substrate is formed in the packaging layer;
and stripping the first bearing plate.
The flexible display panel provided by the application comprises a TFT substrate, an OLED substrate and a packaging layer. The TFT substrate comprises a first flexible substrate and a TFT layer arranged on the first flexible substrate. The OLED substrate is arranged above the TFT substrate and comprises a second flexible substrate, a first electrode arranged below the second flexible substrate, an OLED functional layer arranged below the first electrode and a second electrode arranged below the OLED functional layer, and the second electrode is connected with the TFT layer. The packaging layer is arranged on the TFT substrate and the OLED substrate, surrounds the periphery of the OLED substrate, and is provided with an opening exposing the second flexible substrate. The TFT layer and the OLED functional layer are respectively arranged on the first flexible substrate and the second flexible substrate, so that the upper side and the lower side of the flexible display panel can block water and oxygen through the first flexible substrate and the second flexible substrate, the packaging layer only needs to surround the periphery of the OLED substrate to block water and oxygen invaded by the side surface, and the packaging layer only surrounds the periphery of the OLED substrate and does not need to cover the OLED substrate entirely, therefore, an opening exposing the second flexible substrate can be formed in the packaging layer, and bending stress of the packaging layer can be released by the opening in the bending process of the flexible display panel, so that the packaging layer is prevented from being broken, and the packaging layer can effectively block water and oxygen.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings that are needed in the description of the embodiments will be briefly described below, it being obvious that the drawings in the following description are only some embodiments of the present invention, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a schematic view of a flexible display panel according to an embodiment of the present application;
FIG. 2 is a top view of a flexible display panel according to an embodiment of the present application;
FIG. 3 is a cross-sectional view of a flexible display panel provided in an embodiment of the present application;
FIG. 4 is a cross-sectional view of a flexible display panel provided in another embodiment of the present application;
FIG. 5 is a flowchart of a method for fabricating a flexible display panel according to an embodiment of the present application;
FIG. 6 is a schematic diagram of steps S1-S2 of a method for fabricating a flexible display panel according to an embodiment of the application;
FIG. 7 is a schematic diagram of steps S3-S4 of a method for fabricating a flexible display panel according to an embodiment of the application;
Fig. 8 is a schematic diagram of step S1 of a method for manufacturing a flexible display panel according to another embodiment of the application;
fig. 9 is a schematic diagram of step S3 of a method for manufacturing a flexible display panel according to another embodiment of the application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present application. It will be apparent that the described embodiments are only some, but not all, embodiments of the application. All other embodiments, which can be made by those skilled in the art based on the embodiments of the application without making any inventive effort, are intended to fall within the scope of the application.
In the description of the present application, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", etc. indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings are merely for convenience in describing the present application and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and the like, are used for descriptive purposes only and are not to be construed as indicating or implying a relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defining "a first" or "a second" may explicitly or implicitly include one or more of the described features. In the description of the present application, the meaning of "a plurality" is two or more, unless explicitly defined otherwise.
In the description of the present application, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected, mechanically connected, electrically connected, or communicable with each other, directly connected, indirectly connected via an intermediary, or in communication between two elements or in an interaction relationship between two elements. The specific meaning of the above terms in the present application can be understood by those of ordinary skill in the art according to the specific circumstances.
In the present application, unless expressly stated or limited otherwise, a first feature "above" or "below" a second feature may include both the first and second features being in direct contact, as well as the first and second features not being in direct contact but being in contact with each other through additional features therebetween. Moreover, a first feature being "above," "over" and "on" a second feature includes the first feature being directly above and obliquely above the second feature, or simply indicating that the first feature is higher in level than the second feature. The first feature being "under", "below" and "beneath" the second feature includes the first feature being directly under and obliquely below the second feature, or simply means that the first feature is less level than the second feature.
The following disclosure provides many different embodiments, or examples, for implementing different features of the application. In order to simplify the present disclosure, components and arrangements of specific examples are described below. They are, of course, merely examples and are not intended to limit the application. Furthermore, the present application may repeat reference numerals and/or letters in the various examples, which are for the purpose of brevity and clarity, and which do not in themselves indicate the relationship between the various embodiments and/or arrangements discussed. In addition, the present application provides examples of various specific processes and materials, but one of ordinary skill in the art will recognize the application of other processes and/or the use of other materials.
Referring to fig. 1 to 4, an embodiment of the application provides a flexible display panel, including:
A TFT substrate 1, the TFT substrate 1 including a first flexible substrate 11, and a TFT layer 12 provided on the first flexible substrate 11;
The OLED substrate 2 is arranged above the TFT substrate 1, and the OLED substrate 2 comprises a second flexible substrate 21, a first electrode 22 arranged below the second flexible substrate 21, an OLED functional layer 23 arranged below the first electrode 22 and a second electrode 24 arranged below the OLED functional layer 23;
the packaging layer 3 is arranged on the TFT substrate 1 and the OLED substrate 2, surrounds the periphery of the OLED substrate 2, and is provided with an opening 301 exposing the second flexible substrate 21.
It should be noted that, instead of forming the TFT layer 12 and the OLED functional layer 23 on the same substrate, the TFT layer 12 and the OLED functional layer 23 are respectively disposed on the first flexible substrate 11 and the second flexible substrate 21 to form two substrates, so that the upper and lower sides of the flexible display panel can block water and oxygen through the first flexible substrate 11 and the second flexible substrate 21, so that the encapsulation layer 3 only needs to surround the periphery of the OLED substrate 2 to block water and oxygen that invades from the side, and the encapsulation layer 3 only surrounds the periphery of the OLED substrate 2, and the whole surface is not required to cover the OLED substrate 2, therefore, the encapsulation layer 3 may have an opening 301 exposing the second flexible substrate 21, and during the bending process of the flexible display panel, the opening 301 may release the bending stress of the encapsulation layer 3, thereby avoiding the breakage of the encapsulation layer 3 and enabling the encapsulation layer 3 to effectively block water and oxygen.
In addition, compared with the prior art that the TFT layer 12 and the OLED functional layer 23 are formed on the same substrate, the application has the advantages that the TFT layer 12 and the OLED functional layer 23 are respectively arranged on the first flexible substrate 11 and the second flexible substrate 21 to form two substrates, and the process yield can be improved.
The application of the embodiment of the application to the flexible display panel is not particularly limited, and the flexible display panel can be any product or component with a display function, such as a television, a notebook computer, a tablet personal computer, wearable display equipment (such as a smart bracelet, a smart watch and the like), a mobile phone, virtual reality equipment, augmented reality equipment, vehicle-mounted display, an advertising lamp box and the like.
In some embodiments, referring to fig. 2, the encapsulation layer 3 only needs to surround the periphery of the OLED substrate 2, so that the area of the opening 301 of the flexible display panel can be slightly smaller than the area of the second flexible substrate 21 in a top view, so that the area of the opening 301 of the flexible display panel is maximized, and the stress of the encapsulation layer 3 when bending is further reduced.
In some embodiments, referring to fig. 1, the encapsulation layer 3 may include two barrier layers 31 and a buffer layer 32 between the two barrier layers 31. The barrier layer 31 is an inorganic material, and the buffer layer 32 is an organic material. The two barrier layers 31 are used for blocking water and oxygen, and the buffer layer 32 is used for relieving the bending stress of the two barrier layers 31, so that the packaging layer 3 is further prevented from being broken when being bent.
In some embodiments, referring to fig. 3 and 4, the light emitting direction of the flexible display panel may be a direction of the OLED substrate 2 away from the TFT substrate 1, and the second electrode 24 may be an anode, and the first electrode 22 may be a cathode.
The OLED functional layer 23 includes a hole injection layer, a hole transport layer, a light emitting layer, and an electron transport layer, which are sequentially stacked in a direction in which the second electrode 24 approaches the first electrode 22.
In some embodiments, referring to fig. 3, the first flexible substrate 11 includes a first organic buffer layer 111, a first inorganic barrier layer 112 disposed on the first organic buffer layer 111, a second organic buffer layer 113 disposed on the first inorganic barrier layer 112, and a second inorganic barrier layer 114 disposed on the second organic buffer layer 113. The first and second inorganic barrier layers 112 and 114 can block water and oxygen which invade from the lower side of the flexible display panel, and the first and second organic buffer layers 111 and 113 can relieve bending stress of the first and second inorganic barrier layers 112 and 114 to prevent the first flexible substrate 11 from breaking when bending.
In this embodiment, the material of the first inorganic barrier layer 112 and the second inorganic barrier layer 114 may be one or a combination of silicon nitride, silicon oxide, or silicon oxynitride. The materials of the first and second organic buffer layers 111 and 113 may be Polyimide (PI), polyethylene terephthalate (PET), or Polydimethylsiloxane (PDMS).
In this embodiment, the first inorganic barrier layer 112 and the second inorganic barrier layer 114 are high temperature dense film layers. The high-temperature dense film layer refers to a film layer of dense film quality formed by high-temperature manufacturing, and the dense film has excellent capability of blocking water and oxygen, and can further improve the capability of blocking water and oxygen of the first flexible substrate 11. Also, since the present application blocks water oxygen, which intrudes from both upper and lower sides of the flexible display panel, through the first and second flexible substrates 11 and 21, the first and second flexible substrates 11 and 21 are fabricated before the OLED functional layers 23 and the TFT layers 12 are fabricated, the present application may employ the first and second inorganic barrier layers 112 and 114 which are Wen Zhizuo high, for example, the first inorganic barrier layer 112 may be fabricated at a temperature of 360-380 ℃ to fabricate the second inorganic barrier layer 114 at a temperature of 420-440 ℃. Whereas the prior art mainly uses the encapsulation layer 3 to block the water and oxygen that the flexible display panel invades, the encapsulation layer 3 of the prior art is fabricated on the OLED substrate 2, so in order to avoid the failure of the OLED functional layer 23 caused by high temperature, the encapsulation layer 3 of the prior art is made of a low temperature film, for example, at a temperature of 80-85 ℃, resulting in loose film quality and limited capability of blocking water and oxygen. Therefore, the first flexible substrate 11 of the present application has an ability to block water oxygen better than the encapsulation layer 3 of the prior art.
In some embodiments, referring to fig. 4, the first inorganic barrier layer 112 has a plurality of first through holes 1121 exposing the first organic buffer layer 111, and the second organic buffer layer 113 is further filled in the plurality of first through holes 1121. The plurality of first through holes 1121 may further relieve bending stress of the first inorganic barrier layer 112 when the first inorganic barrier layer 112 is bent, and prevent the first inorganic barrier layer 112 from being broken when bent. The second organic buffer layer 113 is further filled in the plurality of first through holes 1121, so that the second organic buffer layer 113 can further relieve the bending stress of the first inorganic barrier layer 112.
In this embodiment, the second organic buffer layer 113 may be further connected to the first organic buffer layer 111, so that the second organic buffer layer 113 and the first organic buffer layer 111 are in an integrated structure, and bending stress of the first inorganic barrier layer 112 and the second inorganic barrier layer 114 may be further relieved, so as to prevent the first flexible substrate 11 from being broken when bending.
In this embodiment, the shape of the plurality of first through holes 1121 may be triangle, circle, rectangle or polygon, so that the first inorganic barrier layer 112 is in a grid shape as a whole, or the shape of the plurality of first through holes 1121 may be strip-shaped and two ends are located at the edges of the first inorganic barrier layer 112, so that the first inorganic barrier layer 112 is arranged in a plurality of strip-shaped structures as a whole.
In some embodiments, referring to fig. 3, the second flexible substrate 21 includes a third organic buffer layer 211, a third inorganic barrier layer 212 disposed under the third organic buffer layer 211, a fourth organic buffer layer 213 disposed under the third inorganic barrier layer 212, and a fourth inorganic barrier layer 214 disposed under the fourth organic buffer layer 213. The third and fourth inorganic barrier layers 212 and 214 may block water oxygen that is intruded into the upper side of the flexible display panel, and the third and fourth organic buffer layers 211 and 213 may relieve bending stress of the third and fourth inorganic barrier layers 212 and 214 to prevent breakage of the second flexible substrate 21 when bent.
In this embodiment, the material of the third inorganic barrier layer 212 and the fourth inorganic barrier layer 214 may be one or more of silicon nitride, silicon oxide, or silicon oxynitride. The materials of the third organic buffer layer 211 and the fourth organic buffer layer 213 may be Polyimide (PI), polyethylene terephthalate (PET), or Polydimethylsiloxane (PDMS).
In this embodiment, the third inorganic barrier layer 212 and the fourth inorganic barrier layer 214 are high temperature dense film layers. The high-temperature dense film layer refers to a film layer of dense film quality formed by high-temperature manufacturing, and the dense film has excellent capability of blocking water and oxygen, and can further improve the capability of blocking water and oxygen of the second flexible substrate 21. Also, since the present application blocks water oxygen, which intrudes from both upper and lower sides of the flexible display panel, through the first and second flexible substrates 11 and 21, the first and second flexible substrates 11 and 21 are fabricated before the OLED functional layer 23 and the TFT layer 12 are fabricated, the present application may employ the third and fourth inorganic barrier layers 212 and 214 which are Wen Zhizuo high, for example, the third inorganic barrier layer 212 may be fabricated at a temperature of 360-380 ℃ to fabricate the fourth inorganic barrier layer 214 at a temperature of 420-440 ℃. Whereas the prior art mainly uses the encapsulation layer 3 to block the water and oxygen that the flexible display panel invades, the encapsulation layer 3 of the prior art is fabricated on the OLED substrate 2, so in order to avoid the failure of the OLED functional layer 23 caused by high temperature, the encapsulation layer 3 of the prior art is made of a low temperature film, for example, at a temperature of 80-85 ℃, resulting in loose film quality and limited capability of blocking water and oxygen. Therefore, the second flexible substrate 21 of the present application has an ability to block water oxygen better than the encapsulation layer 3 of the prior art.
In some embodiments, referring to fig. 4, the third inorganic barrier layer 212 has a plurality of second through holes 2121 exposing the third organic buffer layer 211, and the fourth organic buffer layer 213 is further filled in the plurality of second through holes 2121. The plurality of second through holes 2121 can further relieve bending stress of the third inorganic barrier layer 212 when the third inorganic barrier layer 212 is bent, and prevent the third inorganic barrier layer 212 from breaking when being bent. The fourth organic buffer layer 213 is further filled in the plurality of second through holes 2121, so that the fourth organic buffer layer 213 can further relieve the bending stress of the third inorganic barrier layer 212.
In addition, the first inorganic barrier layer 112 may be a whole layer structure or a structure having a plurality of first through holes 1121, and the third inorganic barrier layer 212 may be a whole layer structure or a structure having a plurality of second through holes 2121, so that the structural arrangement of the first inorganic barrier layer 112 and the third inorganic barrier layer 212 may be selected according to circumstances, and the present application is not limited thereto. For example, the first inorganic barrier layer 112 and the third inorganic barrier layer 212 are each of a whole layer structure, or the first inorganic barrier layer 112 is a structure having a plurality of first through holes 1121, the third inorganic barrier layer 212 is a structure having a plurality of second through holes 2121, or the first inorganic barrier layer 112 is a whole layer structure, the third inorganic barrier layer 212 is a structure having a plurality of second through holes 2121, or the first inorganic barrier layer 112 is a structure having a plurality of first through holes 1121, and the third inorganic barrier layer 212 is a whole layer structure.
In this embodiment, the fourth organic buffer layer 213 may be further connected to the third organic buffer layer 211, so that the fourth organic buffer layer 213 and the third organic buffer layer 211 are in an integrated structure, and bending stress of the third inorganic barrier layer 212 and the fourth inorganic barrier layer 214 may be further relieved, so as to prevent the second flexible substrate 21 from breaking when bending.
In this embodiment, the shape of the plurality of second through holes 2121 may be triangle, circle, rectangle or polygon, so that the third inorganic barrier layer 212 is in a grid shape as a whole, or the shape of the plurality of second through holes 2121 may be strip-shaped and two ends are located at edges of the third inorganic barrier layer 212, so that the third inorganic barrier layer 212 is arranged in a plurality of strip-shaped structures as a whole.
In some embodiments, referring to fig. 3 and 4, the oled substrate 2 further includes a pixel defining layer 25 disposed under the first electrode 22, and a bump 26 disposed under the pixel defining layer 25. The OLED functional layer 23 is located in the pixel defining layer 25, the second electrode 24 is located under the pixel defining layer 25, and the bump 26 is located between the pixel defining layer 25 and the second electrode 24. That is, the present application lifts the second electrode 24 through the protrusion 26, so as to ensure that the second electrode 24 can be connected to the TFT layer 12, so as to ensure that the OLED functional layer 23 can emit light normally.
In addition, referring to fig. 3 and 4, the tft substrate 1 and the OLED substrate 2 may be connected by a glue layer 4, wherein if the glue layer 4 is adhered to the second electrode 24, the glue layer 4 may be a conductive glue, such as a gold glue or a silver glue. If the glue layer 4 is bonded to the non-electrode structure, the glue layer 4 may be a non-conductive glue, such as an epoxy glue.
In some embodiments, referring to fig. 3 and 4, the TFT substrate 1 further includes a flat layer 13 disposed on the TFT layer 12, and a landing electrode 14 disposed on the flat layer 13. The flat layer 13 has a via hole therein exposing the TFT layer 12, the landing electrode 14 is connected to the TFT layer 12 through the via hole, and the second electrode 24 is connected to the landing electrode 14. That is, a part of the bonding electrode 14 is located in the via hole and connected with the TFT layer 12, and the other part is located on the flat layer 13, and the bonding electrode 14 not only can facilitate connection between the second electrode 24 and the TFT layer 12, but also can reduce the resistance between the second electrode 24 and the TFT layer 12 and improve the electrical performance of the flexible display panel.
In some embodiments, referring to fig. 3 and 4, the tft layer 12 includes a light shielding layer 121 disposed on the first flexible substrate 11, a first insulating layer 122 disposed on the first flexible substrate 11 and the light shielding layer 121, an active layer 123 disposed on the first insulating layer 122, a second insulating layer 124 disposed on the active layer 123, a gate electrode 125 disposed on the second insulating layer 124, a third insulating layer 126 disposed on the first insulating layer 122, the active layer 123 and the gate electrode 125, a source electrode 127 and a drain electrode 128 disposed on the third insulating layer 126, and a passivation layer 129 disposed on the third insulating layer 126, the source electrode 127 and the drain electrode 128.
The source electrode 127 and the drain electrode 128 are connected to the active layer 123 through the third insulating layer 126, and the passivation layer 129 also has a via hole exposing the drain electrode 128, and the landing electrode 14 is connected to the drain electrode 128.
In addition, the TFT layer 12 may further include a connection electrode 1210 disposed on the same layer as the drain electrode 128, where the connection electrode 1210 passes through the third insulating layer 126 and the first insulating layer 122 to be connected with the light shielding layer 121, and the connection electrode 1210 may provide a stable voltage to the light shielding layer 121 to avoid the floating gate effect generated by the light shielding layer 121, thereby effectively improving the working stability of the flexible display panel.
Referring to fig. 5 to fig. 9, based on the above flexible display panel, an embodiment of the present application further provides a method for manufacturing a flexible display panel, including:
Step S1, providing a first bearing plate 5, and manufacturing a first flexible substrate 11 on the first bearing plate 5;
Step S2, fabricating a TFT layer 12 on the first flexible substrate 11 to form a TFT substrate 1;
step S3, providing a second bearing plate 6, and manufacturing a second flexible substrate 21 on the second bearing plate 6;
Step S4, manufacturing a first electrode 22 on a second flexible substrate 21, manufacturing an OLED functional layer 23 on the first electrode 22, manufacturing a second electrode 24 on the OLED functional layer 23, and stripping the second bearing plate 6 to form an OLED substrate 2;
Step S5, aligning and attaching the TFT substrate 1 and the OLED substrate 2, and connecting the second electrode 24 with the TFT layer 12;
In step S6, an encapsulation layer 3 is fabricated on the TFT substrate 1 and the OLED substrate 2, the encapsulation layer 3 surrounds the OLED substrate 2, and the encapsulation layer 3 has an opening 301 exposing the second flexible substrate 21.
Step S7, stripping the first bearing plate 5.
It should be noted that, instead of manufacturing the TFT layer 12 and the OLED functional layer 23 on the same substrate, the TFT layer 12 and the OLED functional layer 23 are manufactured on the first flexible substrate 11 and the second flexible substrate 21 respectively to form two substrates, so that the upper and lower sides of the flexible display panel can block water and oxygen through the first flexible substrate 11 and the second flexible substrate 21, so that the encapsulation layer 3 only needs to surround the periphery of the OLED substrate 2 to block water and oxygen which invades from the side, and the encapsulation layer 3 only surrounds the periphery of the OLED substrate 2 and does not need to cover the OLED substrate 2 entirely, therefore, the encapsulation layer 3 can have an opening 301 exposing the second flexible substrate 21, and in the bending process of the flexible display panel, the opening 301 can release the bending stress of the encapsulation layer 3, thereby avoiding the breakage of the encapsulation layer 3 and enabling the encapsulation layer 3 to effectively block water and oxygen.
In addition, compared with the prior art that the TFT layer 12 and the OLED functional layer 23 are manufactured on the same substrate, the TFT layer 12 and the OLED functional layer 23 are respectively manufactured on the first flexible substrate 11 and the second flexible substrate 21 to form two substrates, so that the process yield can be improved.
In some embodiments, referring to fig. 6, in step S1, before the first flexible substrate 11 is fabricated on the first carrier plate 5, the first sacrificial layer 7 may also be fabricated on the first carrier plate 5. In step S7, the first sacrificial layer 7 and the first carrier plate 5 are peeled at the same time using a laser peeling process. The material of the first sacrificial layer 7 may be amorphous silicon, and the thickness may be
Referring to fig. 7, in step S3, before the second flexible substrate 21 is fabricated on the second carrier plate 6, the second sacrificial layer 8 may also be fabricated on the second carrier plate 6. In step S4, the second sacrificial layer 8 and the second carrier plate 6 are peeled at the same time by a laser peeling process. The material of the second sacrificial layer 8 may be amorphous silicon, and the thickness may be
In some embodiments, referring to FIG. 6, fabricating the first flexible substrate 11 on the first carrier plate in step S1 includes fabricating a first organic buffer layer 111 on the first carrier plate, fabricating a first inorganic barrier layer 112 on the first organic buffer layer 111, fabricating a second organic buffer layer 113 on the first inorganic barrier layer 112, and fabricating a second inorganic barrier layer 114 on the second organic buffer layer 113. The first and second inorganic barrier layers 112 and 114 can block water and oxygen which invade from the lower side of the flexible display panel, and the first and second organic buffer layers 111 and 113 can relieve bending stress of the first and second inorganic barrier layers 112 and 114 to prevent the first flexible substrate 11 from breaking when bending.
In this embodiment, in step S1, the first inorganic barrier layer 112 is manufactured by chemical vapor deposition under a high temperature environment, such as 360-380 ℃, and the second inorganic barrier layer 114 is manufactured by chemical vapor deposition under a high temperature environment, such as 420-440 ℃, so that the first inorganic barrier layer 112 and the second inorganic barrier layer 114 are high temperature dense film layers, which can further improve the capability of the first flexible substrate 11 for blocking water and oxygen.
In this embodiment, referring to fig. 8, before the second organic buffer layer 113 is fabricated on the first inorganic barrier layer 112 in step S1, patterning may be further performed on the first inorganic barrier layer 112, so that the first inorganic barrier layer 112 forms a plurality of first through holes 1121 exposing the first organic buffer layer 111, and the second organic buffer layer 113 formed later is further filled in the plurality of first through holes 1121. The plurality of first through holes 1121 may further relieve bending stress of the first inorganic barrier layer 112 when the first inorganic barrier layer 112 is bent, and prevent the first inorganic barrier layer 112 from being broken when bent. The second organic buffer layer 113 is further filled in the plurality of first through holes 1121, so that the second organic buffer layer 113 can further relieve the bending stress of the first inorganic barrier layer 112.
In some embodiments, referring to FIG. 7, fabricating the second flexible substrate 21 on the second carrier plate in step S3 includes fabricating a third organic buffer layer 211 on the second carrier plate, fabricating a third inorganic barrier layer 212 on the third organic buffer layer 211, fabricating a fourth organic buffer layer 213 on the third inorganic barrier layer 212, and fabricating a fourth inorganic barrier layer 214 on the fourth organic buffer layer 213. The third and fourth inorganic barrier layers 212 and 214 may block water oxygen that is intruded into the upper side of the flexible display panel, and the third and fourth organic buffer layers 211 and 213 may relieve bending stress of the third and fourth inorganic barrier layers 212 and 214 to prevent breakage of the second flexible substrate 21 when bent.
In this embodiment, in step S3, the third inorganic barrier layer 212 is fabricated by chemical vapor deposition at a high temperature, such as 360-380 ℃, and the fourth inorganic barrier layer 214 is fabricated by chemical vapor deposition at a high temperature, such as 420-440 ℃, so that the third inorganic barrier layer 212 and the fourth inorganic barrier layer 214 are high temperature dense film layers, which can further improve the capability of the second flexible substrate 21 to block water and oxygen.
In this embodiment, referring to fig. 9, before the fourth organic buffer layer 213 is formed on the third inorganic barrier layer 212 in step S3, patterning may be further performed on the third inorganic barrier layer 212 to form a plurality of second through holes 2121 exposing the third organic buffer layer 211 on the third inorganic barrier layer 212, and the fourth organic buffer layer 213 formed later is further filled in the plurality of second through holes 2121. The plurality of second through holes 2121 can further relieve bending stress of the third inorganic barrier layer 212 when the third inorganic barrier layer 212 is bent, and prevent the third inorganic barrier layer 212 from breaking when being bent. The fourth organic buffer layer 213 is further filled in the plurality of second through holes 2121, so that the fourth organic buffer layer 213 can further relieve the bending stress of the third inorganic barrier layer 212.
In some embodiments, referring to fig. 6, fabricating the TFT layer 12 on the first flexible substrate 11 in step S2 includes:
the light shielding layer 121 is manufactured on the first flexible substrate 11 by physical vapor sputtering, wherein the material of the light shielding layer 121 can be molybdenum titanium (MoTi), molybdenum (Mo), copper (Cu), silver (Ag), aluminum (Al) and other metals and alloys thereof;
manufacturing a first insulating layer 122 on the first flexible substrate 11 and the light shielding layer 121 by chemical vapor deposition, and performing high-temperature annealing on the first insulating layer 122;
Fabricating a metal oxide on the first insulating layer 122 by physical vapor sputtering, and performing a photolithography process or a wet etching process on the metal oxide to form an active layer 123;
Depositing an insulating material on the first insulating layer 122 and the active layer 123 by chemical vapor deposition, depositing a metal material on the insulating material by physical vapor deposition, and etching the insulating material and the metal material by a photolithography process to form a second insulating layer 124 and a gate electrode 125;
Conducting the active layer 123 by self-alignment of the gate electrode 125;
a third insulating layer 126 is formed on the first insulating layer 122, the active layer 123 and the gate electrode 125 by chemical vapor deposition;
Manufacturing a source electrode 127 and a drain electrode 128 on the third insulating layer 126 by physical vapor sputtering, wherein the source electrode 127 and the drain electrode 128 penetrate through the third insulating layer 126 to be connected with the active layer 123, and the source electrode 127 and the drain electrode 128 can be made of metals such as molybdenum titanium, molybdenum, copper, silver, aluminum and the like and alloys thereof;
a passivation layer 129 is formed on the third insulating layer 126, the source electrode 127, and the drain electrode 128 using chemical vapor deposition.
In some embodiments, referring to fig. 6, after the TFT layer 12 is fabricated on the first flexible substrate 11 in step S2, a flat layer 13 may also be fabricated on the TFT layer 12, and a landing electrode 14 may be fabricated on the flat layer 13. The flat layer 13 has a via hole therein exposing the TFT layer 12, the landing electrode 14 is connected to the TFT layer 12 through the via hole, and the second electrode 24 is connected to the landing electrode 14. That is, a part of the bonding electrode 14 is located in the via hole and connected with the TFT layer 12, and the other part is located on the flat layer 13, and the bonding electrode 14 not only can facilitate connection between the second electrode 24 and the TFT layer 12, but also can reduce the resistance between the second electrode 24 and the TFT layer 12 and improve the electrical performance of the flexible display panel.
In some embodiments, referring to fig. 7, before the OLED functional layer 23 is formed on the first electrode 22 in step S4, a pixel defining layer 25 may be formed on the first electrode 22, the OLED functional layer 23 is formed on the pixel defining layer 25, then a bump 26 is formed on the pixel defining layer 25, and then a second electrode 24 is formed on the pixel defining layer 25, the bump 26 and the OLED functional layer 23, so that the bump 26 is located between the pixel defining layer 25 and the second electrode 24. The raised portion 26 may raise the second electrode 24 to ensure that the second electrode 24 is able to connect with the TFT layer 12 to ensure that the OLED functional layer 23 is able to emit light normally.
In addition, in step S5, the TFT substrate 1 and the OLED substrate 2 may be connected by the adhesive layer 4, where if the adhesive layer 4 is adhered to the second electrode 24, the adhesive layer 4 may be a conductive adhesive, such as a gold adhesive or a silver adhesive. If the glue layer 4 is bonded to the non-electrode structure, the glue layer 4 may be a non-conductive glue, such as an epoxy glue.
In the foregoing embodiments, the descriptions of the embodiments are emphasized, and for parts of one embodiment that are not described in detail, reference may be made to related descriptions of other embodiments. In the implementation, each unit or structure may be implemented as an independent entity, or may be implemented as the same entity or several entities in any combination, and the implementation of each unit or structure may be referred to the foregoing method embodiments and will not be repeated herein.
The flexible display panel and the manufacturing method thereof provided by the embodiment of the application are described in detail, specific examples are used for describing the principle and implementation of the embodiment of the application, the description of the embodiment is only used for helping to understand the technical scheme and the core idea of the embodiment of the application, and one skilled in the art should understand that the technical scheme described in the foregoing embodiments can be modified or some technical features of the embodiment can be replaced equivalently, and the modification or replacement does not make the essence of the corresponding technical scheme deviate from the scope of the technical scheme of the embodiment of the application.
Claims (10)
1. A flexible display panel, comprising:
The TFT substrate comprises a first flexible substrate and a TFT layer arranged on the first flexible substrate;
The OLED substrate is arranged above the TFT substrate and comprises a second flexible substrate, a first electrode arranged below the second flexible substrate, an OLED functional layer arranged below the first electrode and a second electrode arranged below the OLED functional layer, wherein the second electrode is connected with the TFT layer;
The packaging layer is arranged on the TFT substrate and the OLED substrate, surrounds the periphery of the OLED substrate, and is provided with an opening exposing the second flexible substrate;
the area of the opening is smaller than that of the second flexible substrate, the number of the openings is 1, and the packaging layer comprises two barrier layers and a buffer layer positioned between the two barrier layers.
2. The flexible display panel of claim 1, wherein the first flexible substrate comprises a first organic buffer layer, a first inorganic barrier layer disposed on the first organic buffer layer, a second organic buffer layer disposed on the first inorganic barrier layer, and a second inorganic barrier layer disposed on the second organic buffer layer.
3. The flexible display panel of claim 2, wherein the first inorganic barrier layer is a dense membranous film fabricated at a temperature of 360-380 ℃, and the second inorganic barrier layer is a dense membranous film fabricated at a temperature of 420-440 ℃.
4. The flexible display panel of claim 2, wherein the first inorganic barrier layer has a plurality of first through holes therein exposing the first organic buffer layer, the second organic buffer layer further filling in the plurality of first through holes.
5. The flexible display panel of claim 1, wherein the second flexible substrate comprises a third organic buffer layer, a third inorganic barrier layer disposed under the third organic buffer layer, a fourth organic buffer layer disposed under the third inorganic barrier layer, and a fourth inorganic barrier layer disposed under the fourth organic buffer layer.
6. The flexible display panel according to claim 5, wherein the third inorganic barrier layer is a dense film layer formed at a temperature of 360-380 ℃, and the fourth inorganic barrier layer is a dense film layer formed at a temperature of 420-440 ℃.
7. The flexible display panel according to claim 5, wherein the third inorganic barrier layer has a plurality of second through holes therein exposing the third organic buffer layer, the fourth organic buffer layer being further filled in the plurality of second through holes.
8. The flexible display panel according to any one of claims 1 to 7, wherein the OLED substrate further comprises a pixel defining layer under the first electrode, and a protrusion under the pixel defining layer;
the OLED functional layer is located in the pixel definition layer, the second electrode is arranged below the pixel definition layer, and the protruding portion is located between the pixel definition layer and the second electrode.
9. The flexible display panel according to any one of claims 1 to 7, wherein the TFT substrate further comprises a flat layer provided on the TFT layer, and a landing electrode provided on the flat layer;
The flat layer is provided with a via hole exposing the TFT layer, the lap-joint electrode passes through the via hole to be connected with the TFT layer, and the second electrode is connected with the lap-joint electrode.
10. A method for manufacturing a flexible display panel, comprising:
providing a first bearing plate, and manufacturing a first flexible substrate on the first bearing plate;
Manufacturing a TFT layer on the first flexible substrate to form a TFT substrate;
Providing a second bearing plate, and manufacturing a second flexible substrate on the second bearing plate;
Manufacturing a first electrode on the second flexible substrate, manufacturing an OLED functional layer on the first electrode, manufacturing a second electrode on the OLED functional layer, and stripping the second bearing plate to form an OLED substrate;
Attaching the TFT substrate and the OLED substrate in an alignment manner, and connecting the second electrode with the TFT layer;
Manufacturing packaging layers on the TFT substrate and the OLED substrate, wherein the packaging layers surround the periphery of the OLED substrate, and openings exposing the second flexible substrate are formed in the packaging layers, the area of the openings is smaller than that of the second flexible substrate, the number of the openings is 1, and the packaging layers comprise two barrier layers and a buffer layer positioned between the two barrier layers;
and stripping the first bearing plate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111629444.8A CN114300521B (en) | 2021-12-28 | 2021-12-28 | Flexible display panel and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111629444.8A CN114300521B (en) | 2021-12-28 | 2021-12-28 | Flexible display panel and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114300521A CN114300521A (en) | 2022-04-08 |
| CN114300521B true CN114300521B (en) | 2025-02-11 |
Family
ID=80971631
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111629444.8A Active CN114300521B (en) | 2021-12-28 | 2021-12-28 | Flexible display panel and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114300521B (en) |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392615A (en) * | 2001-06-20 | 2003-01-22 | 株式会社半导体能源研究所 | Luminous device and its producing method |
| CN103137654A (en) * | 2012-12-03 | 2013-06-05 | 友达光电股份有限公司 | Electroluminescent display panel |
| CN108198946A (en) * | 2017-12-28 | 2018-06-22 | 深圳市华星光电技术有限公司 | Flexible display panels and its manufacturing method |
| CN111129348A (en) * | 2019-12-24 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN203456465U (en) * | 2013-09-23 | 2014-02-26 | 京东方科技集团股份有限公司 | Electroluminescent device |
| CN106228931A (en) * | 2016-09-23 | 2016-12-14 | 深圳市国显科技有限公司 | A kind of Novel OLED display and processing technology thereof |
-
2021
- 2021-12-28 CN CN202111629444.8A patent/CN114300521B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1392615A (en) * | 2001-06-20 | 2003-01-22 | 株式会社半导体能源研究所 | Luminous device and its producing method |
| CN103137654A (en) * | 2012-12-03 | 2013-06-05 | 友达光电股份有限公司 | Electroluminescent display panel |
| CN108198946A (en) * | 2017-12-28 | 2018-06-22 | 深圳市华星光电技术有限公司 | Flexible display panels and its manufacturing method |
| CN111129348A (en) * | 2019-12-24 | 2020-05-08 | 武汉华星光电半导体显示技术有限公司 | Display panel and manufacturing method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114300521A (en) | 2022-04-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR102790532B1 (en) | Organic light emitting display device | |
| CN109346504B (en) | Flexible display panel and display device | |
| CN111009562B (en) | Stretchable display panel and device and manufacturing method of stretchable display device | |
| CN111326669B (en) | Flexible substrate and flexible organic light emitting diode device | |
| US10811488B2 (en) | Display device | |
| CN110277424A (en) | Stretchable display device, manufacturing method thereof, and electronic device | |
| US11164918B2 (en) | Organic light emitting diode display panel having connection portion connecting organic light emitting diode to peripheral circuit and manufacturing method thereof | |
| KR101781506B1 (en) | Array substrate for organic electro luminescent device | |
| CN111244129B (en) | Array substrate and manufacturing method thereof, display panel and display device | |
| US11081663B2 (en) | Organic electroluminescent display panel with auxiliary electrodes, method for manufacturing the same, and display device using the same | |
| WO2019100478A1 (en) | Touch display panel and manufacturing method therefor | |
| CN107068890A (en) | Organic light-emitting display device and its manufacture method | |
| CN110783490A (en) | Display panel and preparation method thereof | |
| CN104752465B (en) | Array base palte of top emitting organic light emitting display and preparation method thereof | |
| US20220310752A1 (en) | Display Substrate and Display Apparatus | |
| US20220181399A1 (en) | Electroluminescence Display Apparatus | |
| US7777219B2 (en) | Dual panel type organic electroluminescent display device | |
| CN110752247A (en) | Display panel and method of making the same | |
| US12004376B2 (en) | Display motherboard, preparation method thereof, display substrate and display device | |
| KR20190027985A (en) | Display device and manufacturing method thereof | |
| US20250151583A1 (en) | Display Panel and Method for Manufacturing the Same, and Display Device | |
| CN111933671B (en) | Display substrate, manufacturing method thereof and display panel | |
| CN114300521B (en) | Flexible display panel and manufacturing method thereof | |
| CN113097250B (en) | Organic light emitting display device | |
| KR20210055131A (en) | Display device and method for manufacturing the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |