CN114144541B - 磁记录介质用溅射靶 - Google Patents

磁记录介质用溅射靶 Download PDF

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Publication number
CN114144541B
CN114144541B CN202080051547.8A CN202080051547A CN114144541B CN 114144541 B CN114144541 B CN 114144541B CN 202080051547 A CN202080051547 A CN 202080051547A CN 114144541 B CN114144541 B CN 114144541B
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CN
China
Prior art keywords
magnetic
oxide
sputtering target
powder
recording medium
Prior art date
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Active
Application number
CN202080051547.8A
Other languages
English (en)
Chinese (zh)
Other versions
CN114144541A (zh
Inventor
镰田知成
栉引了辅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tanaka Kikinzoku Kogyo KK
Original Assignee
Tanaka Kikinzoku Kogyo KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tanaka Kikinzoku Kogyo KK filed Critical Tanaka Kikinzoku Kogyo KK
Publication of CN114144541A publication Critical patent/CN114144541A/zh
Application granted granted Critical
Publication of CN114144541B publication Critical patent/CN114144541B/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material
    • H01J37/3429—Plural materials
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14—Metallic material, boron or silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/62—Record carriers characterised by the selection of the material
    • G11B5/64—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent
    • G11B5/65—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition
    • G11B5/656—Record carriers characterised by the selection of the material comprising only the magnetic material without bonding agent characterised by its composition containing Co
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/84—Processes or apparatus specially adapted for manufacturing record carriers
    • G11B5/851—Coating a support with a magnetic layer by sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3411—Constructional aspects of the reactor
    • H01J37/3414—Targets
    • H01J37/3426—Material

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing Of Magnetic Record Carriers (AREA)
  • Physical Vapour Deposition (AREA)
  • Magnetic Record Carriers (AREA)
CN202080051547.8A 2019-07-18 2020-07-16 磁记录介质用溅射靶 Active CN114144541B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019132859 2019-07-18
JP2019-132859 2019-07-18
PCT/JP2020/028611 WO2021010490A1 (ja) 2019-07-18 2020-07-16 磁気記録媒体用スパッタリングターゲット

Publications (2)

Publication Number Publication Date
CN114144541A CN114144541A (zh) 2022-03-04
CN114144541B true CN114144541B (zh) 2024-12-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN202080051547.8A Active CN114144541B (zh) 2019-07-18 2020-07-16 磁记录介质用溅射靶

Country Status (5)

Country Link
US (1) US12230485B2 (https=)
JP (1) JP7462636B2 (https=)
CN (1) CN114144541B (https=)
TW (1) TWI812869B (https=)
WO (1) WO2021010490A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20250182963A1 (en) * 2022-03-11 2025-06-05 Georgetown University Boron-Based and High-Entropy Magnetic Materials
CN121219435A (zh) * 2024-04-25 2025-12-26 Ｊｘ金属株式会社 磁性材料靶材和磁性材料靶材组装件

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1743497A (zh) * 2004-09-01 2006-03-08 黑罗伊斯有限公司 用于改进的磁性层的溅射靶材料
CN103180481A (zh) * 2010-12-22 2013-06-26 吉坤日矿日石金属株式会社 强磁性材料溅射靶
CN109923610A (zh) * 2016-11-01 2019-06-21 田中贵金属工业株式会社 磁记录介质用溅射靶

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988807A (ja) * 1982-11-12 1984-05-22 Nec Corp 磁気記憶体
JPH11175944A (ja) * 1997-12-10 1999-07-02 Hitachi Ltd 磁気記録媒体及び磁気記憶装置
JP6284126B2 (ja) * 2014-12-15 2018-02-28 昭和電工株式会社 垂直記録媒体、垂直記録再生装置
JP2016160530A (ja) * 2015-03-05 2016-09-05 光洋應用材料科技股▲分▼有限公司 磁気合金スパッタリングターゲット及び磁気記録媒体用記録層
WO2017170138A1 (ja) * 2016-03-31 2017-10-05 Ｊｘ金属株式会社 強磁性材スパッタリングターゲット
MY191374A (en) * 2016-12-28 2022-06-21 Jx Nippon Mining & Metals Corp Magnetic material sputtering target and method for manufacturing same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1743497A (zh) * 2004-09-01 2006-03-08 黑罗伊斯有限公司 用于改进的磁性层的溅射靶材料
CN103180481A (zh) * 2010-12-22 2013-06-26 吉坤日矿日石金属株式会社 强磁性材料溅射靶
CN109923610A (zh) * 2016-11-01 2019-06-21 田中贵金属工业株式会社 磁记录介质用溅射靶

Also Published As

Publication number Publication date
JPWO2021010490A1 (https=) 2021-01-21
TWI812869B (zh) 2023-08-21
CN114144541A (zh) 2022-03-04
JP7462636B2 (ja) 2024-04-05
US20220262608A1 (en) 2022-08-18
WO2021010490A1 (ja) 2021-01-21
TW202120720A (zh) 2021-06-01
US12230485B2 (en) 2025-02-18

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