CN114074237A - Welding strip, photovoltaic module with same and processing method of welding strip - Google Patents
Welding strip, photovoltaic module with same and processing method of welding strip Download PDFInfo
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- CN114074237A CN114074237A CN202010797861.2A CN202010797861A CN114074237A CN 114074237 A CN114074237 A CN 114074237A CN 202010797861 A CN202010797861 A CN 202010797861A CN 114074237 A CN114074237 A CN 114074237A
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- 238000003672 processing method Methods 0.000 title claims abstract description 9
- 238000003466 welding Methods 0.000 title abstract description 47
- 229910000679 solder Inorganic materials 0.000 claims abstract description 196
- 229910052718 tin Inorganic materials 0.000 claims abstract description 48
- 229910052747 lanthanoid Inorganic materials 0.000 claims abstract description 34
- 150000002602 lanthanoids Chemical class 0.000 claims abstract description 34
- 229910052738 indium Inorganic materials 0.000 claims abstract description 31
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 30
- 238000002844 melting Methods 0.000 claims abstract description 30
- 230000008018 melting Effects 0.000 claims abstract description 30
- 229910052787 antimony Inorganic materials 0.000 claims abstract description 27
- 229910052797 bismuth Inorganic materials 0.000 claims abstract description 27
- 229910052732 germanium Inorganic materials 0.000 claims abstract description 27
- 229910052745 lead Inorganic materials 0.000 claims abstract description 26
- 238000005476 soldering Methods 0.000 claims abstract description 25
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 22
- 239000000758 substrate Substances 0.000 claims description 39
- 238000000034 method Methods 0.000 claims description 24
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 22
- 239000011159 matrix material Substances 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 12
- 238000007747 plating Methods 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 7
- 229910000838 Al alloy Inorganic materials 0.000 claims description 6
- 238000001816 cooling Methods 0.000 claims description 6
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- -1 copper-silver-aluminium Chemical compound 0.000 claims description 4
- 238000007598 dipping method Methods 0.000 claims description 4
- 238000007493 shaping process Methods 0.000 claims description 4
- JRBRVDCKNXZZGH-UHFFFAOYSA-N alumane;copper Chemical compound [AlH3].[Cu] JRBRVDCKNXZZGH-UHFFFAOYSA-N 0.000 claims description 3
- 229910001316 Ag alloy Inorganic materials 0.000 claims description 2
- YCKOAAUKSGOOJH-UHFFFAOYSA-N copper silver Chemical compound [Cu].[Ag].[Ag] YCKOAAUKSGOOJH-UHFFFAOYSA-N 0.000 claims description 2
- 239000000463 material Substances 0.000 description 9
- 230000003647 oxidation Effects 0.000 description 8
- 238000007254 oxidation reaction Methods 0.000 description 8
- 238000003723 Smelting Methods 0.000 description 5
- 229910045601 alloy Inorganic materials 0.000 description 4
- 239000000956 alloy Substances 0.000 description 4
- 238000009713 electroplating Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 229910000978 Pb alloy Inorganic materials 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- 229910052765 Lutetium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000003490 calendering Methods 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- 239000010431 corundum Substances 0.000 description 2
- 230000002950 deficient Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052746 lanthanum Inorganic materials 0.000 description 2
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 2
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 229910052691 Erbium Inorganic materials 0.000 description 1
- 229910052693 Europium Inorganic materials 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910052779 Neodymium Inorganic materials 0.000 description 1
- 229910052777 Praseodymium Inorganic materials 0.000 description 1
- 229910052773 Promethium Inorganic materials 0.000 description 1
- 229910052772 Samarium Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 229910020816 Sn Pb Inorganic materials 0.000 description 1
- 229910020922 Sn-Pb Inorganic materials 0.000 description 1
- 229910008783 Sn—Pb Inorganic materials 0.000 description 1
- 229910052771 Terbium Inorganic materials 0.000 description 1
- 229910052775 Thulium Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 229910052729 chemical element Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000018044 dehydration Effects 0.000 description 1
- 238000006297 dehydration reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 description 1
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 1
- 238000001914 filtration Methods 0.000 description 1
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 description 1
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 description 1
- 238000005342 ion exchange Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002932 luster Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 description 1
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000005491 wire drawing Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
- B23K35/24—Selection of soldering or welding materials proper
- B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400 degrees C
- B23K35/262—Sn as the principal constituent
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
- B23K35/40—Making wire or rods for soldering or welding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0512—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module made of a particular material or composition of materials
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a solder strip, a photovoltaic module with the solder strip and a processing method of the solder strip, wherein the solder strip comprises: a conductive base; the soldering tin layer covers at least one part of the conductive base body and consists of Sn, Bi and Pb; or the soldering tin layer is composed of Sn, Bi, Pb and at least one of Ga, Ge, In, Sb and lanthanide; wherein the content of Bi is 8 to 40%, the content of Sn is 40 to 65%, the content of Pb is 25 to 40%, and the sum of the contents of at least one of Ga, Ge, In, Sb, and lanthanoid is 5% or less. According to the solder strip provided by the invention, the melting point of the solder layer can be reduced, so that the welding temperature of the solder strip is reduced, and the yield of the battery piece is improved.
Description
Technical Field
The invention relates to the technical field of solder strip manufacturing, in particular to a solder strip, a photovoltaic module with the solder strip and a processing method of the solder strip.
Background
The solder strip is one of the main auxiliary materials of the photovoltaic module, plays a role in connecting the battery piece and conducting electricity, and the conductivity, weldability and elongation of the solder strip play a vital role in the quality of the photovoltaic module. In the related art, the melting point of the solder strip is higher, so that the welding temperature of the solder strip is higher, the fraction defective of the battery piece is higher, and a cold joint exists.
Disclosure of Invention
The present invention is directed to solving at least one of the problems of the prior art. Therefore, an object of the present invention is to provide a solder strip, which has a low melting point, and can reduce the soldering temperature of the solder strip and improve the yield of battery cells.
Another object of the present invention is to provide a photovoltaic module having the above solder strip.
Still another object of the present invention is to provide a method for processing the solder strip.
According to an embodiment of the first aspect of the invention, a photovoltaic module comprises: a conductive base; the soldering tin layer covers at least one part of the conductive base body and consists of Sn, Bi and Pb; or the soldering tin layer is composed of Sn, Bi, Pb and at least one of Ga, Ge, In, Sb and lanthanide; wherein the content of Bi is 8 to 40%, the content of Sn is 40 to 65%, the content of Pb is 25 to 40%, and the sum of the contents of at least one of Ga, Ge, In, Sb, and lanthanoid is 5% or less.
According to the solder strip of the embodiment of the invention, the solder layer is composed of Sn, Bi and Pb or at least one of Sn, Bi, Pb and Ga, Ge, In, Sb and lanthanide elements, the content of Bi is 8-40%, and the sum of the contents of at least one of Ga, Ge, In, Sb and lanthanide elements is less than or equal to 5%, so that the melting point of the solder layer can be reduced, the welding temperature of the solder strip can be reduced, and the yield of the battery piece can be improved.
According to some embodiments of the invention, the Bi content is 20%.
According to some embodiments of the invention, the Sn content is 50% to 53%.
According to some embodiments of the invention, a sum of contents of at least one of the Ga, the Ge, the In, the Sb, and the lanthanoid is 1% or less.
According to some embodiments of the invention, the solder layer consists of Sn, Bi, Pb, Ga, In and lanthanides.
According to some embodiments of the invention, the solder layer has a melting point temperature T, wherein T satisfies: t is more than or equal to 125 ℃ and less than or equal to 170 ℃.
According to some embodiments of the invention, the solder strip is a solder strip having a circular cross-sectional shape, a solder strip having a triangular cross-sectional shape, a solder strip having a rectangular cross-sectional shape, or a combination of a solder strip having a triangular cross-sectional shape and a solder strip having a rectangular cross-sectional shape.
According to some embodiments of the invention, when the solder ribbon has a circular cross-sectional shape, the solder ribbon has a diameter d and the solder layer has a thickness t1Wherein d, t1Respectively satisfy: d is more than or equal to 0.15mm and less than or equal to 0.4mm, and t is more than or equal to 10 mu m1≤20μm。
According to some embodiments of the invention, when the solder ribbon has a triangular cross-sectional shape, the solder ribbon has a base side with a length L and the solder layer has a thickness t2Wherein said L, t2Respectively satisfy: l is more than or equal to 0.35mm and less than or equal to 0.45mm, and t is more than or equal to 10 mu m2≤40μm。
According to some embodiments of the invention, when the solder ribbon has a rectangular cross-sectional shape, the solder ribbon has a width w and the solder layer has a thickness t3Wherein said w, t3Respectively satisfy: w is more than or equal to 0.7mm and less than or equal to 0.9mm, and t is more than or equal to 10 mu m3≤40μm。
According to some embodiments of the invention, the electrically conductive substrate is a copper substrate, a copper-aluminum alloy substrate, a copper-silver alloy substrate, or a copper-silver-aluminum alloy substrate.
A photovoltaic module according to an embodiment of the second aspect of the invention comprises a solder ribbon according to the embodiment of the first aspect of the invention described above.
According to the processing method of the solder strip of the third aspect embodiment of the invention, the processing method comprises the following steps: drawing and shaping the filamentous conductive matrix for multiple times to obtain the conductive matrix with a regular shape; carrying out heat treatment on the conductive matrix with a regular shape to obtain a soft conductive matrix; and after the soft conductive base body is cooled, plating a soldering tin layer on the surface to obtain the soldering strip.
According to some embodiments of the invention, before the heat treating the conductive substrate having a regular shape, further comprises: extruding the conductive base body with a regular shape to obtain a rectangular conductive base body; or alternatively extruding and non-extruding the conductive substrate with a regular shape and a triangular cross section to obtain the special-shaped conductive substrate, wherein the special-shaped conductive substrate is a combination of the conductive substrate with the triangular cross section and the conductive substrate with the rectangular cross section.
According to some embodiments of the invention, the surface plating of the solder layer after cooling of the soft conductive matrix is achieved by a hot dip process or a plating process.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic cross-sectional view of a solder strip in accordance with an embodiment of the present invention;
FIG. 2 is a schematic cross-sectional view of a solder strip in accordance with another embodiment of the present invention;
FIG. 3 is a schematic cross-sectional view of a solder strip in accordance with yet another embodiment of the present invention;
FIG. 4 is a schematic cross-sectional view of a solder strip in accordance with yet another embodiment of the present invention;
FIG. 5 is a schematic illustration of different Bi contents and melting point temperatures of solder layers according to an embodiment of the present invention;
FIG. 6 is another schematic illustration of different Bi contents and melting point temperatures of solder layers in accordance with an embodiment of the present invention;
FIG. 7 is a schematic flow chart diagram of a method of processing solder strips in accordance with an embodiment of the present invention;
fig. 8 is a schematic flow chart of a method of processing a solder layer according to an embodiment of the invention;
fig. 9 is a schematic flow chart of a method of processing a solder layer according to another embodiment of the present invention.
Reference numerals:
100: welding a strip;
1: a conductive base; 2: a solder layer;
3: a triangular solder ribbon section; 4: a rectangular solder ribbon section;
200: a pay-off module; 300: a wire drawing module;
400: a calendering module; 500: an annealing module;
600: a tinning module; 700: and a wire take-up module.
Detailed Description
Embodiments of the present invention will be described in detail below, the embodiments described with reference to the drawings being illustrative, and the embodiments of the present invention will be described in detail below.
A solder strip 100 in accordance with an embodiment of the first aspect of the present invention is described below with reference to fig. 1-9. The solder ribbon 100 may be applied to a photovoltaic module (not shown) such as a heterojunction (a special PN junction formed by two or more different semiconductor material films deposited on the same substrate in sequence, the materials having different energy band gaps, and they may be a compound such as gallium arsenide, or a semiconductor alloy such as silicon-germanium). In the following description of the present application, the solder ribbon 100 is exemplified as being applied to a photovoltaic module.
As shown in fig. 1-4, a solder ribbon 100 according to an embodiment of the first aspect of the present invention includes a conductive substrate 1 and a solder layer 2, the solder layer 2 covering at least a portion of the conductive substrate 1. The conductive substrate 1 may be a copper substrate, a copper-aluminum alloy substrate, a copper-silver-aluminum alloy substrate, or the like. But is not limited thereto.
The melting point of the soldering tin layer 2 can be smaller than that of the conductive base body 1, the soldering tin layer 2 has certain fluidity after being melted, and the liquid soldering tin layer 2 fills the gap between the solder strip 100 and the cell, so that the solder strip 100 is connected with the cell of the photovoltaic component.
Specifically, the solder layer 2 may be composed of Sn (tin, a metal element having a silvery white luster), Bi (bismuth, an element of group VA 83 of the sixth period of the periodic table), and Pb (lead, a metal chemical element having an atomic number of 82 and an atomic weight of 207.2, which is a non-radioactive element having the largest atomic weight). Among them, Sn has a low melting point, is soft and ductile, and plays an important role in soldering between the solder ribbon 100 and the cell sheet of the photovoltaic module. Pb can reduce the tension and viscosity of the surface of the soldering tin layer 2, so that the soldering tin layer 2 has good wettability and can well absorb the thermal stress generated by temperature change. The Bi element can reduce the melting point temperature of the soldering tin layer 2, so that the welding temperature of the solder strip 100 can be reduced, the yield of the battery piece is improved, and the false soldering is avoided. And has no pollution and is environment-friendly.
Alternatively, the solder layer 2 may be composed of Sn, Bi, Pb, and at least one of Ga, Ge, In, Sb, and lanthanoid. That is, the solder layer 2 may be composed of Sn, Bi, Pb, and one or more of Ga, Ge, In, Sb, and lanthanoid. For example, when the solder layer 2 is composed of Sn, Bi, Pb, and one of Ga, Ge, In, Sb, and lanthanoid elements, the solder layer 2 may be composed of Sn, Bi, Pb, and Ga; alternatively, the solder layer 2 may be composed of Sn, Bi, Pb, and Ge; alternatively, the solder layer 2 may be composed of Sn, Bi, Pb, and In; or, the solder layer 2 may be composed of Sn, Bi, Pb, and Sb; still alternatively, the solder layer 2 may be composed of one of lanthanides and Sn, Bi, Pb.
When the solder layer 2 is composed of Sn, Bi, Pb, and a plurality of Ga, Ge, In, Sb, and lanthanoid elements, the solder layer 2 includes a plurality of Ga, Ge, In, Sb, and lanthanoid elements In addition to Sn, Bi, and Pb. In the description of the present invention, "plural" means two or more. Note that "a plurality of Ga, Ge, In, Sb, and lanthanoid" may be only a plurality of Ga, Ge, In, Sb; it may also be only a plurality of lanthanides; of course, it is also possible to include both at least one of Ga, Ge, In, Sb and at least one of the lanthanides.
Thus, by adding at least one of Ga, Ge, In, Sb and lanthanoid to the solder layer 2, the melting point of the solder layer 2 can be further lowered, the wettability of the solder layer 2 on the surface of the conductive base 1 can be increased, the oxidation of Bi can be reduced, and the low-temperature brittleness of the solder ribbon 100 can be reduced.
Here, it should be noted that lanthanoid elements (rare earth elements, also called "REEs") refer to a general term for 15 elements from lanthanum No. 57 to lutetium 71 in the periodic table, and specifically include lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, and lutetium.
Wherein the content of Bi is 8-40% (inclusive), the content of Sn is 40-65% (inclusive), the content of Pb is 25-40% (inclusive), and the sum of the contents of at least one of Ga, Ge, In, Sb and lanthanoid is 5% or less. That is, when the solder layer 2 includes one of Ga, Ge, In, Sb and lanthanoid, the content of the above one of Ga, Ge, In, Sb and lanthanoid is 5% or less; when the solder layer 2 includes a plurality of kinds of Ga, Ge, In, Sb, and lanthanoid elements, the sum of the contents of the above plurality of kinds of Ga, Ge, In, Sb, and lanthanoid elements is 5% or less.
For example, when the solder layer 2 is composed of Sn, Bi, and Pb, the content of Sn may be constant, the content of Bi may be different, the melting point temperature of the solder layer 2 may be different, and the relationship between the content of Bi and the melting point temperature of the solder layer 2 is shown in table 1.
TABLE 1
| Main component | Bi content | Melting |
| Sn50Pb50Bi0 | ||
| 0％ | 184.8 | |
| Sn50Pb49Bi1 | 1％ | 186.2 |
| Sn50Pb48Bi2 | 2％ | 184.2 |
| Sn50Pb47Bi3 | 3％ | 182.8 |
| Sn50Pb46Bi4 | 4％ | 179.3 |
| Sn50Pb45Bi5 | 5％ | 174 |
| |
6％ | 171.2 |
| Sn50Pb43Bi7 | 7％ | 171 |
| |
8％ | 167.9 |
| Sn50Pb41Bi9 | 9％ | 163.8 |
| Sn50Pb40Bi10 | 10％ | 161.8 |
Referring to table 1 in conjunction with fig. 5 and 6, for every 1% increase in Bi content, the Pb content decreases by 1% and the melting point temperature can be lowered by about 2 ℃. Also, when the solder layer 2 includes a lanthanide, the melting point temperature of the solder ribbon 100 can be further reduced. However, the content of Bi cannot be too high, and when the content of Bi is too high, the greater the reliability risk, the more brittle the solder strip 100 is, and the more easily oxidized. Thus, by setting the Bi content to 8% to 40%, the melting point of the solder layer 2 can be reduced, and the low-temperature brittleness and oxidation can be prevented.
According to the solder strip 100 of the embodiment of the invention, the solder layer 2 is composed of Sn, Bi and Pb or at least one of Sn, Bi, Pb, Ga, Ge, In, Sb and lanthanoid, and the content of Bi is 25% to 40% and the sum of the contents of at least one of Ga, Ge, In, Sb and lanthanoid is 5% or less, so that the melting point of the solder layer 2 can be reduced, the soldering temperature of the solder strip 100 can be reduced, and the yield of battery pieces can be improved.
In some alternative embodiments of the present invention, in combination with table 1, the content of Bi may be 20%. Therefore, when the Bi content is 20%, the melting point of the solder strip 100 can be effectively reduced, the reliability of the solder strip 100 can be ensured, the low-temperature brittleness of the solder strip 100 can be reduced, and oxidation can be prevented.
In some alternative embodiments of the present invention, referring to table 1, the Sn content may be 45% to 58% (inclusive). So set up, make and weld area 100 and have better welding performance, guarantee to weld the welding quality between area 100 and photovoltaic module's the battery piece to guarantee to weld area 100 and have higher current collection efficiency.
Further alternatively, the content of Sn may be 50% to 53% (inclusive). For example, the content of Sn may be 53%. So set up, can further promote the welding performance of welding area 100 when reducing the melting point temperature of welding area 100, improve the welding quality between welding area 100 and photovoltaic module's the battery piece, guarantee that welding area 100 has higher current collection efficiency.
Alternatively, the sum of the contents of at least one of Ga, Ge, In, Sb, and lanthanoid is 1% or less. This makes it possible to reduce the melting point temperature of the solder strip 100, improve the wettability, reduce the oxidation of Bi, and avoid adverse effects on the solder strip 100.
In some embodiments of the invention, the solder layer 2 consists of Sn, Bi, Pb, Ga, In and lanthanides. Among them, Ga can reduce the oxidation of Bi, In can increase the conductivity of the solder layer 2, reduce the resistance, and lanthanoid can further reduce the melting point of the solder strip 100, and has better wettability, which can further reduce the oxidation of Bi. Thus, the solder layer 2 provided in this way lowers the melting point of the solder ribbon 100, has good wettability, and can prevent oxidation.
In some embodiments of the invention, the solder layer 2 has a melting point temperature T, wherein T satisfies: t is more than or equal to 125 ℃ and less than or equal to 170 ℃. Specifically, for example, when T < 125 ℃, the melting point temperature of the solder layer 2 is too low and brittleness is large, so that reliability of the solder ribbon 100 is low; when T > 170 ℃, the melting point temperature of the solder layer 2 is too high, which causes the soldering temperature of the solder strip 100 to be high, which may result in a high defective rate of the battery cell and may cause a cold joint. Thus, by making T satisfy: t is more than or equal to 125 ℃ and less than or equal to 170 ℃, and the melting point temperature of the soldering tin layer 2 is reasonable, so that the yield of the cell of the photovoltaic module can be improved, the false soldering can be avoided, the low-temperature brittleness can be reduced, and the reliability of the solder strip 100 can be improved.
Alternatively, as shown in fig. 1, 3 and 4, the cross-sectional shape of the solder strip 100 may be circular, triangular, rectangular, or the like. Therefore, when the cross section of the welding strip 100 is circular, continuous welding with the battery piece can be realized, the series resistance can be reduced, and the risk of hidden cracking of the battery piece is reduced; when the cross section of the welding strip 100 is triangular, the welding strip 100 has good welding performance and good reflection effect, and can improve the conversion efficiency; when the cross-sectional shape of the welding strip 100 is rectangular, the welding strip 100 is relatively flat, has a relatively small thickness, has a relatively good welding performance, and can achieve continuous welding with the battery piece.
Of course, the present invention is not limited thereto, and referring to fig. 2, the solder strip 100 may also be a combination of a solder strip having a triangular cross-sectional shape and a solder strip having a rectangular cross-sectional shape. For example, in the example of fig. 2, the solder strip 100 includes a triangular solder strip section 3 and a rectangular solder strip section 4, wherein the cross-sectional shape of the triangular solder strip section 3 is triangular and the cross-sectional shape of the rectangular solder strip section 4 is rectangular. The triangular solder ribbon section 3 and the rectangular solder ribbon section 4 are connected to each other in the length direction of the solder ribbon 100. For example, the rectangular solder strip section 4 can be connected to the back of the battery piece, the welding area of the rectangular solder strip section 4 and the battery piece is large, and the welding tension can be improved, so that the reliability of the photovoltaic module can be ensured, and the rectangular solder strip section 4 does not occupy the front area of the battery piece. The triangular solder strip section 3 is connected on the front of the adjacent cell, and light irradiated on the triangular solder strip section 3 can be finally reflected to the cell, so that the optical utilization rate of the front of the photovoltaic module can be effectively improved, and the power of the photovoltaic module is improved. So set up, when guaranteeing that solder strip 100 has better welding performance, can realize with the continuous welding of battery piece, and can effectively improve photovoltaic module's optical utilization.
In some embodiments of the invention, when the solder strip 100 has a circular cross-sectional shape, the solder strip 100 has a diameter d and the solder layer 2 has a thickness t1Wherein d, t1Respectively satisfy: d is more than or equal to 0.15mm and less than or equal to 0.4mm, and t is more than or equal to 10 mu m1≤20μm。
Specifically, for example, when d < 0.15mm, the diameter of the solder ribbon 100 is too small, and poor soldering such as cold soldering may occurA problem; when d is greater than 0.4mm, the diameter of the solder strip 100 is too large, so that the shielding area of the cell can be increased, and the conversion efficiency of the photovoltaic module is affected. When t is1When t is less than 10 μm, the thickness of the solder layer 2 is too small, and the quality of the solder joint between the solder ribbon 100 and the cell may be deteriorated1Above 20 μm, this results in an excessive cost of the entire solder strip 100. Thus, by making d, t1Respectively satisfy: d is more than or equal to 0.15mm and less than or equal to 0.4mm, and t is more than or equal to 10 mu m1Less than or equal to 20 mu m, can reduce the shielding of the battery piece while ensuring the welding quality between the welding strip 100 and the battery piece, and has lower cost.
In some embodiments of the invention, when the solder strip 100 has a triangular cross-sectional shape, the solder strip 100 has a base side length L and the solder layer 2 has a thickness t2Wherein L, t2Respectively satisfy: l is more than or equal to 0.35mm and less than or equal to 0.45mm, and t is more than or equal to 10 mu m2Less than or equal to 40 mu m. Therefore, through the arrangement, the conversion rate of the photovoltaic module can be improved, meanwhile, the welding quality between the welding strip 100 and the battery piece is guaranteed, and the cost can be reduced.
In some embodiments of the invention, when the solder strip 100 has a rectangular cross-sectional shape, the solder strip 100 has a width w and the solder layer 2 has a thickness t3Wherein w, t3Respectively satisfy: w is more than or equal to 0.7mm and less than or equal to 0.9mm, and t is more than or equal to 10 mu m3Less than or equal to 40 mu m. With the arrangement, the welding quality between the welding strip 100 and the battery piece is ensured, meanwhile, the stop of the battery piece can be reduced, and the cost of the welding strip 100 can be reduced.
A photovoltaic module according to an embodiment of the second aspect of the present invention includes the solder strip 100 according to the above-described embodiment of the first aspect of the present invention. For example, the solder strips 100 may be soldered to the main grid of the cell pieces for connecting adjacent cell pieces. The grid line paste may be composed of a conductive material and a resin.
According to the photovoltaic module provided by the embodiment of the invention, by adopting the solder strip 100, the melting point of the solder strip 100 is lower, the low-temperature brittleness can be reduced, the oxidation can be prevented, the yield of the photovoltaic module can be improved, and the cost can be reduced.
Other constructions and operations of photovoltaic modules according to embodiments of the present invention are known to those of ordinary skill in the art and will not be described in detail herein.
The processing method of the solder strip 100 according to the embodiment of the third aspect of the present invention, referring to fig. 7, includes the following steps:
and drawing and shaping the filamentous conductive matrix 1 for multiple times to obtain the conductive matrix 1 with a regular shape.
For example, when the conductive substrate 1 is a copper conductive substrate, a copper wire is paid off by the paying-off module 200, and then enters the drawing module 300 for drawing and shaping for multiple times, so as to obtain a fine round wire or a triangular copper wire with regular shape and stable dimension.
The conductive base 1 having a regular shape is subjected to heat treatment to obtain the conductive base 1 in a soft state.
In the above steps, the conductive substrate 1, for example, a copper wire, may be subjected to heat treatment by the annealing module 500, so that a soft copper wire may be obtained, the grains of the copper may be refined, the yield strength of the copper wire may be reduced, and the mechanical properties of the copper wire may be improved.
After cooling, the soft conductive substrate 1 is plated with the solder layer 2 to obtain the solder strip 100.
The conductive substrate 1, such as a copper wire, may be plated with the solder layer 2 in the tin plating module 600, and the solder layer 2 enters the wire take-up module 700 after being cooled and dried, so as to obtain a finished solder strip 100 meeting the specification.
According to the processing method of the welding strip 100, the size stability and the production efficiency of the welding strip 100 can be improved, the quality of the welding strip 100 is guaranteed, meanwhile, the production cost of the welding strip 100 is reduced, and the process steps are simplified. In some embodiments of the present invention, with reference to fig. 7, before the heat treatment of the regularly shaped conductive substrate 1, the method further includes:
extruding the conductive base body 1 with a regular shape to obtain a rectangular conductive base body; or
And extruding and non-extruding the conductive base body 1 with a regular shape and a triangular cross section alternately to obtain the special-shaped conductive base body, wherein the special-shaped conductive base body is a combination of the conductive base body with the triangular cross section and the conductive base body with the rectangular cross section.
For example, when it is desired to manufacture a solder ribbon or a deformed solder ribbon having a rectangular cross-sectional shape, the conductive base 1 having a regular shape, such as a thin round wire or a triangular copper wire, may be fed into the rolling module 400 after the conductive base 1 having a regular shape is obtained.
Wherein, the thin round wire or the triangular copper wire can be extruded by the upper and the lower calendering wheels to obtain the conductive matrix with the rectangular cross section. The triangular copper wire can obtain a special-shaped conductive base body, namely a combination of the conductive base body with the triangular cross section and the conductive base body with the rectangular cross section, through the alternative processes of the occlusion and separation states of the special-shaped upper rolling wheel and the flat lower rolling wheel. When it is desired to make a solder strip having a circular cross-sectional shape, the conductive substrate 1 need not enter the calender module 400. Therefore, through the steps, the welding strip with the rectangular cross section or the combination of the welding strip with the triangular cross section and the welding strip with the rectangular cross section can be obtained, the process is simple, and the reliability is high.
In some embodiments of the present invention, the solder layer 2 is plated on the surface of the soft conductive substrate 1 after cooling by a hot dipping process or a plating process.
For example, when a hot dipping process is adopted, the tin material is a Sn-Bi-Pb low-temperature tin material, the tin material is heated to a completely molten state at first, then the conductive base 1 such as a copper wire passes through the tin material in the completely molten state at a constant speed, the tin material can be uniformly coated on the surface of the copper wire, the copper wire is cooled and dried, and finally the copper wire enters the take-up module 700, so that the finished welding strip 100 meeting the specification can be obtained.
When the electroplating process is adopted, the anode of the electroplating pool adopts a Sn-Bi-Pb alloy anode, a conductive substrate 1 such as a copper wire enters the electroplating pool, a thin layer of Sn-Bi-Pb alloy is plated on the surface of the copper wire through the ion exchange principle, the Sn-Bi-Pb alloy plating layer is firmly combined with the copper wire and has good adhesive force, and the finished welding strip 100 meeting the specification is obtained after dehydration, passivation and drying. Therefore, the solder layer 2 can be firmly attached to the conductive base body 1 by plating the solder layer 2 by adopting a hot dipping process or an electroplating process, so that the quality of the whole solder strip 100 can be improved, and the solder strip 100 has better welding performance.
Two methods of processing the solder layer 2 according to embodiments of the invention are described below with reference to fig. 8 and 9.
The first method comprises the following steps:
uniformly mixing Sn, Bi and Pb according to a certain percentage, and heating to 290-320 ℃ to obtain a mixed melt;
then adding a smelting covering agent, and keeping the temperature and stirring for 30 minutes;
and removing the smelting covering agent on the surface of the mixed melt, filtering through a filter, pouring into a mold, and cooling to obtain the alloy solder.
And the second method comprises the following steps:
uniformly mixing Sn and Pb according to a certain percentage, adding the mixture into a crucible such as a corundum crucible, smelting in a vacuum environment at 290-320 ℃, preserving heat for 40-60min after the raw materials are completely molten, stirring once every 10min, taking out and pouring into a mold for later use;
putting the Sn-Pb alloy into a crucible such as a corundum crucible, adding a certain amount of Bi, smelting in a vacuum environment at the smelting temperature of 260-300 ℃, preserving heat for 40-60min after complete melting, stirring once every 10min, taking out, pouring into a mold, and cooling to obtain the alloy solder.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "axial", "radial", "circumferential", and the like, indicate orientations and positional relationships based on the orientations and positional relationships shown in the drawings, and are used merely for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the device or element so referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore, should not be construed as limiting the present invention.
In the description of the present invention, the first feature being "on" or "under" the second feature may include the first and second features being in direct contact, and may also include the first and second features being in contact with each other not directly but through another feature therebetween.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples" or the like mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (15)
1. A solder strip, comprising:
a conductive base;
a solder layer covering at least a portion of the conductive base,
the soldering tin layer consists of Sn, Bi and Pb; or
The soldering tin layer is composed of Sn, Bi, Pb and at least one of Ga, Ge, In, Sb and lanthanide;
wherein the content of Bi is 8 to 40%, the content of Sn is 40 to 65%, the content of Pb is 25 to 40%, and the sum of the contents of at least one of Ga, Ge, In, Sb, and lanthanoid is 5% or less.
2. The solder strip of claim 1, wherein the Bi content is 20%.
3. The solder strip of claim 1, wherein the content of Sn is 50% to 53%.
4. The solder strip of claim 1, wherein the sum of the contents of at least one of the Ga, Ge, In, Sb and lanthanoid elements is 1% or less.
5. Solder ribbon according to claim 1, characterized In that the solder layer consists of Sn, Bi, Pb, Ga, In and lanthanides.
6. Solder strip according to one of the claims 1-5, characterized in that the melting temperature of the solder layer is T, where T satisfies: t is more than or equal to 125 ℃ and less than or equal to 170 ℃.
7. A solder strip according to any of claims 1-5, characterized in that the solder strip is a solder strip with a circular cross-sectional shape, a solder strip with a triangular cross-sectional shape, a solder strip with a rectangular cross-sectional shape, or a combination of a solder strip with a triangular cross-sectional shape and a solder strip with a rectangular cross-sectional shape.
8. The solder ribbon of claim 7, wherein when the solder ribbon has a circular cross-sectional shape, the solder ribbon has a diameter d and the solder layer has a thickness t1Wherein d, t1Respectively satisfy: d is more than or equal to 0.15mm and less than or equal to 0.4mm, and t is more than or equal to 10 mu m1≤20μm。
9. The solder ribbon of claim 7, wherein when the solder ribbon has a triangular cross-sectional shape, the solder ribbon has a base side length of L and the solder layer has a thickness t2Wherein said L, t2Respectively satisfy: l is more than or equal to 0.35mm and less than or equal to 0.45mm, and t is more than or equal to 10 mu m2≤40μm。
10. The solder ribbon of claim 7, wherein when the solder ribbon has a rectangular cross-sectional shape, the solder ribbon has a width w and the solder layer has a thickness t3Wherein said w, t3Respectively satisfy: w is more than or equal to 0.7mm and less than or equal to 0.9mm, and t is more than or equal to 10 mu m3≤40μm。
11. Solder strip according to one of claims 1 to 5, characterized in that the electrically conductive substrate is a copper substrate, a copper-aluminium alloy substrate, a copper-silver alloy substrate or a copper-silver-aluminium alloy substrate.
12. A photovoltaic module comprising a solder strip according to any one of claims 1 to 11.
13. A method of processing solder strips according to any of claims 1 to 11, characterized by the steps of:
drawing and shaping the filamentous conductive matrix for multiple times to obtain the conductive matrix with a regular shape;
carrying out heat treatment on the conductive matrix with a regular shape to obtain a soft conductive matrix;
and after the soft conductive base body is cooled, plating a soldering tin layer on the surface to obtain the soldering strip.
14. The solder strip processing method of claim 13, wherein before the heat treatment of the regularly shaped conductive substrate, the method further comprises:
extruding the conductive base body with a regular shape to obtain a rectangular conductive base body; or
And extruding and non-extruding the conductive substrate with a regular shape and a triangular cross section alternately to obtain the special-shaped conductive substrate, wherein the special-shaped conductive substrate is a combination of the conductive substrate with the triangular cross section and the conductive substrate with the rectangular cross section.
15. The method as claimed in claim 13, wherein the solder layer is plated on the surface of the soft conductive substrate after cooling by a hot dipping process or a plating process.
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| CN202010797861.2A CN114074237A (en) | 2020-08-10 | 2020-08-10 | Welding strip, photovoltaic module with same and processing method of welding strip |
| PCT/CN2021/109339 WO2022033323A1 (en) | 2020-08-10 | 2021-07-29 | Welding strip, photovoltaic assembly having same, and method for processing welding strip |
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| CN202010797861.2A CN114074237A (en) | 2020-08-10 | 2020-08-10 | Welding strip, photovoltaic module with same and processing method of welding strip |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117943428A (en) * | 2024-03-26 | 2024-04-30 | 江苏蓝慧智能装备科技有限公司 | Photovoltaic solder strip busbar automated production equipment |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108161271A (en) * | 2017-12-27 | 2018-06-15 | 北京康普锡威科技有限公司 | A kind of SnPbBiSb systems low temperature enhancing solder and preparation method thereof |
| CN108365042A (en) * | 2018-02-22 | 2018-08-03 | 晶科能源有限公司 | A kind of photovoltaic welding belt preparation method and photovoltaic module |
| CN109309134A (en) * | 2018-09-13 | 2019-02-05 | 常州市北达机械制造有限公司 | The preparation method of optically focused painting tin copper strips |
| CN111384192A (en) * | 2020-04-30 | 2020-07-07 | 常州市北达机械制造有限公司 | Special-shaped tin-coated copper strip and preparation method thereof |
| CN111477713A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Welding strip for IBC photovoltaic module |
-
2020
- 2020-08-10 CN CN202010797861.2A patent/CN114074237A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108161271A (en) * | 2017-12-27 | 2018-06-15 | 北京康普锡威科技有限公司 | A kind of SnPbBiSb systems low temperature enhancing solder and preparation method thereof |
| CN108365042A (en) * | 2018-02-22 | 2018-08-03 | 晶科能源有限公司 | A kind of photovoltaic welding belt preparation method and photovoltaic module |
| CN109309134A (en) * | 2018-09-13 | 2019-02-05 | 常州市北达机械制造有限公司 | The preparation method of optically focused painting tin copper strips |
| CN111477713A (en) * | 2019-10-22 | 2020-07-31 | 国家电投集团西安太阳能电力有限公司 | Welding strip for IBC photovoltaic module |
| CN111384192A (en) * | 2020-04-30 | 2020-07-07 | 常州市北达机械制造有限公司 | Special-shaped tin-coated copper strip and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117943428A (en) * | 2024-03-26 | 2024-04-30 | 江苏蓝慧智能装备科技有限公司 | Photovoltaic solder strip busbar automated production equipment |
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