CN1140411C - Hot-air ink-jet printing head with high heat-transferring efficiency - Google Patents
Hot-air ink-jet printing head with high heat-transferring efficiency Download PDFInfo
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- CN1140411C CN1140411C CNB991007026A CN99100702A CN1140411C CN 1140411 C CN1140411 C CN 1140411C CN B991007026 A CNB991007026 A CN B991007026A CN 99100702 A CN99100702 A CN 99100702A CN 1140411 C CN1140411 C CN 1140411C
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Abstract
The present invention relates to a hot-air ink-jet printing head with high heat transferring efficiency. A heating resistor of the present invention is formed in a single crystal silicon zone divided by a heat insulation medium wall, and the lower surface of the single crystal silicon zone is part of a pipe wall of a capillary. The heat of the heating resistor directly flows into ink in the capillary, and the manufacture of the hot-air ink-jet printing heat is based on porous silicon processing. The present invention mainly comprises the following steps: a heavily-doped buried layer is changed into a porous silicon by anode oxidation in an HF solution; the porous silicon is changed into an oxygenized porous silicon by high temperature thermal oxidation; the oxygenized porous silicon is used as a stopping layer of silicon anisotropic chemical corrosion by the characteristic of silicon etch solution resistance of the oxygenized porous silicon; the oxygenized porous silicon is selectively etched by the characteristic that the oxygenized porous silicon is easy to be corroded by a buffering HF solution.
Description
The invention relates to heat vapor ink-jet print head, particularly about the heat vapor ink-jet print head of high heat transfer efficient, this printhead is made by the standard bipolar circuit technology of a few modifications, the device element of all printheads all is integrated on the same silicon chip, heating resistor is formed by the monocrystalline silicon island that the heat insulation medium wall of insulation separates, and the ink-jet capillary is by forming with a kind of single crystal silicon material.
Commercial heat vapor ink-jet print head adopts adhering technique that various prefabricated member block are combined usually.Adhering technique commonly used has chemistry, as apply adhesive between member block; Physics as applying DC voltage between member block.The used material of prefabricated elements comprises monocrystalline silicon piece, sheet glass, and plastic sheet, sheet metal etc., the processing method of prefabricated elements relates to semiconductor machining, glass etching, plastics hot pressing, and the physical chemistry of metal plating etc.
A typical example is the printhead that contains the nickel nozzle array, is bonded by the nickel sheet and the silicon chip that process respectively.The formation of nickel nozzle array was divided into for two steps.The first step is ready to prefabricated component, comprises nickel sheet that contains bar-shaped trough and the silicon chip that contains the heating resistor array.The nickel sheet that contains bar-shaped trough uses the method for electroless plating to form, and electroplating egative film is a stainless steel substrates that the photoetching adhesive tape is arranged, and nickel dam is earlier in the stainless steel district formation that exposes, along with the nickel dam thickening connects in flakes on the photoetching adhesive tape.For formation contains the silicon chip of heating resistor array, silicon chip is carried out thermal oxide form silicon dioxide layer on its surface, depositing electrically conductive resistance film on silicon dioxide layer then, and form the heating resistor array by photoetching corrosion.The method of second step with the anode combination pastes a nickel sheet that takes off from stainless steel substrates on the silicon chip that is formed with film heating resistor array, make each bar-shaped trough on the nickel sheet cover a heating resistor, thereby form capillary and the heating resistor array that matches one by one.
Another typical example is to form heat vapor ink-jet print head with plastics substituted metal nickel.The first step of making is ready to prefabricated film respectively earlier, comprises with the formation of thermoplastic mould pressing method containing the unit of plastic of massive parallel bar groove and form film heating resistor matrix on the silicon chip of thermal oxidation.Second step was attached to the unit of plastic thermocompression bonded on the silicon chip, and the heating resistor during stickup on the maintenance silicon chip is corresponding one by one with the bar-shaped trough on the unit of plastic, made each capillary of pasting back formation all contain a heating resistor.
There are many problems in this two methods of pasting combination manufacturing heat vapor ink-jet print head.The one, manufacturing technology class complexity, manufacture process is loaded down with trivial details numerous and disorderly, and manufacturing equipment is numerous in variety, and the production cost reduction is severely limited, thereby commercially available price is high for a long time.Two is that two slice, thin pieces bond together, and the alignment precision that can reach has certain limitation, and device size is difficult to further dwindle.The 3rd, various combination material coefficient of thermal expansion coefficient difference produces the crack easily in the junction, cause component failure.
In recent years, also have and be devoted to develop the single-chip integrated hot vapor ink-jet print head.One of them example is that the single-chip integrated hot vapor ink-jet print head is sprayed in the side, and the formation of its nozzle array is higher than 7 * 10 based on boron doping concentration
19/ cm
3Monocrystalline silicon be not subjected to the characteristic of ethylenediamine-catechol-water (EDP) solution corrosion basically.There is the stick district of many high boron-dopings in the silicon chip front that is used to make, and EDP solution is during from the silicon chip front etch, and corrosion can only be carried out at the silicon area of not boron-doping.When corroding not the boron-doping silicon area degree of depth when surpassing high boron-doping slab region thickness, the corrosion lateral magnification forms inverted trapezoidal strip groove to the bottom in high boron-doping stick district in bottom, stick district, and the four sides sidewall of groove is (110) crystal face.Since EDP solution to the corrosion rate of (111) crystal face far below corrosion rate to (100) and (110) crystal face, through enough corrosion for a long time, the groove that corrosion forms is no matter the mask graph of initial usefulness how, finally all is around the four sides cone that forms by (111) crystal face.After strip groove forms, with the dielectric seal erosion opening of thermal oxide and low temperature chemical vapor deposition (LPCVD), form the polysilicon heating resistor then on dielectric layer, metal line and Tunization layer are finished the device manufacturing.
The heat vapor ink-jet print head of the heat vapor ink-jet print head of this single chip architecture and above-mentioned two combining structures relatively has many progressive parts, and topmost progress has been a designs simplification, makes to become more simple semiconductor machining.But still have many problems, and mainly be that the heat delivery that heating resistor produces arrives ink barrel, make the efficient of ink heating vaporization, not to have improved, but reduced.In two chip architectures, the heat that heating resistor produces need only just enter ink through the passivation protection layer, makes ink heating vaporization.And in this single chip architecture, the heat that heating resistor produces will enter ink through the silicon rib of dielectric layer and high boron-doping.Dielectric thermal conductivity is low, and thermal resistance is big, and only some heat can enter the silicon rib by dielectric layer.The thermal conductivity height of silicon, thermal resistance is little, and the heat that flows into the silicon rib can vertically flow also can lateral flow, and cross-current is crossed the heat of silicon rib and then flows into the silicon wall lost.This shows, the heat that heating resistor produces some stopped lostly by dielectric layer, some scatters and disappears by silicon rib and the conduction of silicon wall again, and remaining part just can enter ink barrel, make ink heating vaporization, therefore the heat transference efficiency of this single chip architecture is not high.In addition, for forming ink barrel, stop up the slit between the silicon rib, the bottom of silicon rib is empty during obstruction, and blocked slit lower surface can not be the same smooth with silicon rib lower surface, and be likely uneven, its result must hinder flowing of ink, makes ink spray difficult control.Again secondly, after forming, high boron-dopped layer can not stand high-temperature process again, otherwise because the distribution again of impurity but doping content drop to and can not stop each to the corrosive liquid corrosion, this just gives, and on-off circuit and other support circuit of production control heating resistor brings difficulty on same silicon chip.
General purpose of the present invention proposes a kind of heat vapor ink-jet print head exactly, solves the problem that above-mentioned two chip architectures and single chip architecture heat vapor ink-jet print head exist.
One of characteristics of the present invention, be to propose a kind of heat vapor ink-jet print head, its heating resistor is formed by the monocrystalline silicon region that heat insulation medium wall separates, and realizes the homogeneity of heating resistor modulator material and resistor support material, eliminates the coefficient of thermal expansion mismatch problems of dissimilar materials.
Two of characteristics of the present invention, be to propose a kind of heat vapor ink-jet print head, the capillary of its direct ink is buried under the monocrystalline silicon region that forms heating resistor, and the lower surface that makes monocrystalline silicon region is the part of capillary wall, realizes that heating resistor contacts with the direct of ink to be heated.
Three of characteristics of the present invention are to propose a kind of heat vapor ink-jet print head, and its heating resistor improves the compatibility made from bipolar integrated circuit by the silicon epitaxy layer manufacturing of standard bipolar integrated circuit, are convenient to realize that monolithic is integrated and reduce production costs.
Four of characteristics of the present invention are to propose a kind of heat vapor ink-jet print head, and the capillary of its direct ink comprises capillary sidewall and top cover by the silicon single crystal material manufacturing, help improving sealing property capillaceous and realize further microminiaturization capillaceous.
Five of characteristics of the present invention are to propose a kind of heat vapor ink-jet print head, and it forms the micromachining technology of micro-structural and the bipolar integrated circuit manufacturing technology and the bipolar CMOS manufacturing technology of standard has higher compatibility.
In order to introduce the fine structure of heat vapor ink-jet print head provided by the invention in detail, manufacturing step, and structure-forming process, this paper is with 14 width of cloth figure.
Fig. 1 partly excises the stravismus schematic diagram for the heat vapor ink-jet print head that the present invention proposes.
Fig. 2 to Figure 14 represents that heat vapor ink-jet print head that the present invention proposes is in each main manufacturing step schematic cross section.
With reference to the accompanying drawings, the structure and the distinct configuration thereof of the heat vapor ink-jet print head that the present invention is proposed, manufacturing step and innovative technology thereof describe in detail.
The heat vapor ink-jet print head that the present invention proposes as shown in Figure 1.This heat vapor ink-jet print head comprises silicon substrate 101, silicon epitaxy layer 102, heat insulation dielectric layer 104, metal adhesion layer 105, metal level 106, nozzle 112, capillary 110, capillary sidewall 111, ink container 109, heating resistor 107, metal line 108, heat insulation medium wall 103.Nozzle 112 is arranged in two rows, and each nozzle vertically down passes through metal level 106, metal adhesion layer 105, and heat insulation dielectric layer 104 and silicon epitaxy layer 102 intersect vertically with capillary 110.Capillary 110 is buried under the silicon epitaxy layer 102, is arranged in parallel, and the one end is relative one by one with nozzle 112 logical, and the other end communicates with ink container 109, is separated by capillary sidewall 111 between the adjacent capillary.Ink flows into from the opening of ink container 109 bottoms, distributes through ink container 109 to enter each capillary 110.Insulated wall 103 is vertically passed through silicon epitaxy layer 102, is divided into some heat insulation monocrystalline silicon regions mutually, and each heating resistor 107 occupies a monocrystalline silicon region.Heating resistor 107 energising backs produce Joule heat, and this heat delivery to ink barrel heats ink.The horizontal direction of heat flows and is only limited to the scope of a monocrystalline silicon region, and interborough flowing stopped by insulated wall 103.The vertical path of up flowing of heat is stopped that by heat insulation dielectric layer 104 heat that can flow through is seldom.One monocrystalline silicon thin layer is arranged at the bottom of heating resistor, down is the ink in the capillary again, and heat down enters the circulation that ink is unique thermal resistance minimum, and most of heat enters ink thus.Ink heating back vaporization forms steam bubble, and steam bubble is grown up, and produces pressure, and the ink column that capillary is between steam bubble and the nozzle squeezes out nozzle.
The manufacturing of the heat vapor ink-jet print head that the present invention proposes is processed as the basis with porous silicon.Porous silicon is a kind of monocrystalline silicon that contains a large amount of micropores.When monocrystalline silicon carries out anodic oxidation in HF solution, the hole is provided for the microcell silico briquette, makes the microcell silico briquette be dissolved in HF solution, form branch shape hole, and the silico briquette that does not obtain the hole is not dissolved in HF solution, forms branch shape silicon silk, and the diameter of hole and silicon silk distributes from tens dusts to the hundreds of dust.The formation of porous silicon and the doping type of silicon and doping content are closely related, different doping types has different anodic oxidation voltage threshold values with doping content, if applied voltage is lower than specific voltage threshold, then anodic oxidation can not take place, or the anodic oxidation meeting that has taken place stops immediately, and porous silicon can not form or stop to form.According to forming the required anode voltage threshold value of porous silicon, to arrange by size, general rule is: n
+＜p
+＜p
-＜n
-According to this rule, the anode voltage value that can apply by control makes the n of p-type or n-type silicon chip
+-type district or p
+-type district forms porous silicon.
Porous silicon has very large specific area, at high temperature carries out very soon with oxygen reaction, and reaction moment expand to whole porous silicon layer, thereby can under lower temperature, form thick oxidized porous silicon layer at short notice.But the thermal oxide porous silicon that forms under lower temperature is without the high temperature densification, and the ability of its solution corrosion of anti-HF is not as good as conventional thermal oxidation silicon.Make comparisons with regard to the buffered HF solution corrosion, the speed of corrosion thermal oxide porous silicon is approximately 100 times of speed of corrosion thermal oxidation silicon, or corrosion thermal oxide porous silicon is approximately 100 to the selectivity of thermal oxidation silicon.The oxidized porous silicon ratio is easier to corrosion, is that just porosity is far below unoxidized porous silicon because its structure still is loose structure.
Anisotropic etch solution corrosion silicon, thermal oxidation silicon commonly used is made diaphragm, and this is because these corrosive liquids are very low to the corrosion rate of thermal oxidation silicon.Such as, anisotropic etchant tetraethyl ammonium hydroxide [(C
2H
5)
4NOH] to low four orders of magnitude of corrosion of the corrosion rate of thermal oxidation silicon comparison silicon.In fact; the thermal oxide porous silicon also can be as the diaphragm of anisotropic etchant corrosion silicon; with regard to tetraethyl ammonium hydroxide; it to low two orders of magnitude of the corrosion of silicon, can protect the silicon face of its covering not to be subjected to the corrosion of tetraethyl ammonium hydroxide to corrupt speed ratio of thermal oxide porous silicon equally effectively.
The manufacturing process of the heat vapor ink-jet print head that the present invention proposes such as Fig. 2 are to shown in Figure 14.The parent material of making heat vapor ink-jet print head is p
--type boron-doping (100) silicon chip 201, single-sided polishing, resistivity 10-20 ohm-cm.Silicon chip 201 carries out thermal oxide in 1100 ℃ wet oxygen, form the silicon dioxide layer 202 of thick about 9000 dusts at silicon chip surface.Carry out photoetching corrosion, in silicon dioxide layer 202, form the diffusion window.Carry out n
+-type diffusion of buried layer, the case method expands antimony, and diffuse source is Sb
2O
3(powder): SiO
2The mixture of (powder)=1: 4.At the bottom of diffuse source placed quartzy case, cover quartz cover, cure at 1220 ℃ and carried out processed in 20 minutes.The quartzy case of during diffusion silicon chip being packed into was about 14 hours of 1200 ℃ of diffusions.Diffusion atmosphere is N
2: O
2=1: the mist of 0.15-0.4, this gas is crossed reative cell with the data rate stream of 100ml/min.Diffuse to form n
+-type layer 203, about 20 ohm of its square resistance, about 10 microns of its junction depth, the diffuse layer structure of its formation is as shown in Figure 2.
Carry out another photoetching corrosion, enlarge the area of silicon dioxide layer 202 Central Plains diffusion window.Carrying out another diffusion of buried layer, also is to adopt the antimony diffusion of case method, and diffusion process is identical with above-mentioned diffusion of buried layer process, just shortens to about 1 hour diffusion time.The original buried regions in diffusion back is slightly deepened, and forms n in the diffusion window port area that enlarges
+-type diffusion layer 204, about 25 ohm of its square resistance, about 1.5 microns of junction depth, the diffuse layer structure of its formation is as shown in Figure 3.
After removing the silicon dioxide layer 202 on silicon chip 201 surfaces, carry out growing epitaxial silicon.Silicon chip led to HCl gas 3-5 minute, the silicon chip surface layer that erosion removal is 0.3 to 0.5 micron after going into stove.Epitaxial growth is with SiCl
4And H
2Be the source, be grown in 1150 ℃ and carry out that obtain thick about 4.5 microns epitaxial loayer 205 by the control time, its resistivity is the 10-15 ohm-cm, the epitaxial layer structure of its formation as shown in Figure 4.
Carry out thermal oxide, form the silicon dioxide layer 206 of thick about 5000 dusts on epitaxial loayer 205 surfaces.Carry out photoetching corrosion, in silicon dioxide layer 206, form the diffusion window.Carry out the boron diffusion of two steps, first pre-deposition is the source with the BN sheet, 950 ℃ of depositing temperatures, and sedimentation time 20 minutes forms the boron diffusion source layer in epi-layer surface.Spread propelling then, 1225 ℃ of temperature, form about 2 microns of junction depth, the p that square resistance is about 10 ohm at about 2 hours of time
+-type diffusion region 207, the diffusion region structure of its formation as shown in Figure 5.
Remove the silicon dioxide layer 206 on the epitaxial loayer 205, with low-pressure chemical vapor deposition (LPCVD) method, the low stress that forms thick about 4000 dusts is rich in silicon silicon nitride layer 208.Sedimentary condition: 850 ℃ of temperature, air pressure 150mTorr, source of the gas SiH
2Cl
2And NH
3, SiH
2Cl
2And NH
3Flow-rate ratio be 5.68.The refractive index (n) of the silicon nitride layer that forms is 2.19, and siliceous nitrogen is 0.95 than (Si/N), and film residual stress is 125MPa.Carry out photoetching and form the photoresist figure.For sheltering, carry out reactive ion etching (RIE) with the photoresist figure, earlier the saturating silicon nitride layer 208 of corrosion then corrodes epitaxial loayer 205, form wide about 2 microns, vertically logical buried regions 203 and 204 groove 209 down.The condition of corroding silicon nitride: etchant gas SF6+He=175: 50sccm, air pressure 375mTorr, RF power 250W, RF frequency 13.56MHz.The condition of corrosion epitaxial silicon: etchant gas Cl2+He+180: 400sccm, air pressure 425mTorr, RF power 275W, RF frequency 13.56MHz.This step is made the structure of formation shown in figure six.
In HF solution, carry out anodic oxidation and form porous silicon.Anodizing tank is two chambers groove that polytetrafluoroethylene (PTFE) processes, and is isolated by silicon chip to be processed between two Room, and each locellus all is full of HF solution, and has platinum electrode to lead to outside the groove.Silicon chip to be processed is just facing negative electrode, and the back side is towards anode, and porous silicon is formed on the front of silicon chip.The prescription of HF solution is: 25% HF, 25% water and 50% absolute ethyl alcohol.Apply DC voltage, current density is remained on be approximately 100nA/cm
2Buried regions 203 and 204 is transformed into porous silicon layer 210 with this understanding, and the porous silicon voidage of formation is distributed in the 60%-70% scope.N beyond buried regions 203 and 204 zones
--type silicon is not subjected to anodised the influence.The structure that this step manufacturing forms as shown in Figure 7.
Carry out thermal oxide and form oxidized porous silicon.Thermal oxide is carried out in two steps, oxidation 1 hour in 300 ℃ dried oxygen earlier, then oxidation 1 hour in 850 ℃ wet oxygen.The effect of low-temperature oxidation is to prevent from high-temperature process that the micropore collapse is subsided the structure of porous silicon is destroyed.High-temperature oxydation just begins, and whole porous silicon layer almost begins oxidation simultaneously, and in the relatively short time, form with porous silicon layer 210 almost with thick oxidized porous silicon layer 211.Because oxidation carries out very soon, one hour oxidation just is enough to whole porous silicon layer is transformed into 100% oxide.Use the LPCVD method once more, form silicon nitride layer 213 that covers epitaxial loayer 205 and the silicon nitride wall 212 of filling groove 209.The structure that this step manufacturing forms as shown in Figure 8.
Carry out photoetching corrosion, in silicon nitride layer 213, form contact hole, expose p
+The two ends of-type diffusion region 207.The deposited by electron beam evaporation method, the aluminium lamination that deposition of thick is about 1 micron, and carry out the aluminium wiring that photoetching corrosion formation comprises Ohmic contact part 214, as shown in Figure 9.Meanwhile form the unillustrated press welding block that is connected with external circuit among the figure.
Use the LPCVD method, form thick about 2 microns phosphorosilicate glass (PSG) layer 215, this layer covers the silicon nitride layer 213 of epitaxial loayer 205 surface formation and the Ohmic contact part 214 of aluminium wiring, as surface passivation layer, as shown in figure 10.
The deposited by electron beam evaporation method forms the chromium layer of thick about 300 dusts and the nickel dam of thick about 4000 dusts successively.Carry out photoetching and form the photoresist figure, with the photoresist figure for sheltering wet etching nickel and chromium.The solution of corrosion nickel is: nitric acid 200ml, hydrochloric acid 200ml, water 600ml.The solution of corrosion chromium is: peracid cerium ammonium 10g, perchloric acid 5ml, water 100ml.For sheltering, use the RIE method with the nickel figure, corrosion penetrates PSG layer 215, and silicon dioxide layer 213 and epitaxial loayer 205 form nozzle 218.The condition of corrosion PSG and silica: etchant gas CF4: CHF3: He=90: 30: 120sccm, air pressure 2.8mTorr, RF power 450W, RF frequency 13.56MHz.The corrosion epitaxial silicon condition with use previously identical.The structure that this step manufacturing forms as shown in figure 11.
Carry out photoetching corrosion and expose unillustrated press welding block among the figure.Then carry out another photoetching, applying nozzle 218 and cover press welding block with photoresist, and form from nozzle 218 and stretch and the photoresist post 219 that goes out.Carry out chemical nickel plating then, the nickel dam 217 that forms with electron beam evaporation method is a counterdie, forms the nickel dam 220 of thick about 5-6 micron.Chemical plating fluid is main salt with sodium chloride and sodium sulphate, and inferior sodium phosphate and hexylene glycol sodium are reducing agent, and natrium citricum is a buffer, and citric acid is a complexing agent.Reaction temperature is 90-95 ℃, and film deposition rate is 290nm/min.The structure that this step manufacturing forms as shown in figure 12.
Carry out photoetching corrosion, in the silicon dioxide layer at silicon chip 201 back sides, form the corrosion window of rectangle.Carry out each diversity corrosion of silicon, corrosive liquid is a TMAH, is abbreviated as TMAH, and chemical molecular formula is (C
2H
5)
4NOH.This corrosive liquid can be used as the developer solution of positive photoetching rubber, does not have toxicity, and is very low to the aluminium corrosion rate, can use in the CMOS manufacturing process.Corrosion device is the constant temperature glass container, disposes agitator and reflux condenser.Etching condition: solution is 22% TMAH, and temperature is controlled at 90 ℃.With this understanding, to the about 1400nm/min of corrosion rate of (100) silicon wafer face, be 0.02 to 0.08 to the corrosion rate ratio of (111) and (100) silicon wafer face.To the corrosion rate of thermal oxidation silicon and thermal oxide porous silicon, the corrosion rate of comparison (100) silicon wafer face is hanged down four and two orders of magnitude respectively.The window of corrosion from silica carries out in silicon chip, can stop automatically when eroding to thermal oxide porous silicon layer 211.But still note the control etching time, in order to avoid too surpass the scheduled time, with causticize thermal oxide porous silicon layer 211 and then corrosion epitaxial loayer 205.The ink container 221 that this step manufacturing forms as shown in figure 13.
Protect the front of silicon chip 201 with photoresist, use BHF: H
2O=1: 5 corrosive liquids corrosion thermal oxide porous silicon, the BHF solution composition is 40%NH
4F: HF=1: 6.Behind the thermal oxide porous silicon layer 211 of erosion removal ink container 221 bottoms, corrosion continues towards there being the area under control of thermal oxide porous silicon to carry out, until till all the thermal oxide porous silicon erodes.The BHF corrosive liquid does not corrode silicon nitride wall 212.The BHF corrosive liquid does not corrode the silicon wall around the area under control yet.This step is made the capillary 222 that connects 218 times companies of nozzle ink container 221 in the formation, as shown in figure 14.Remove the photoresist and the photoresist post 219 in silicon chip 201 fronts, manifest unillustrated press welding block among nozzle 218 and the figure.So far the complete manufacture process of whole heat vapor ink-jet print heads.
Be described in detail the manufacture process of heat vapor ink-jet print head above, the manufacturing process that is provided is best, but is not unique feasible.The essential characteristic of the ink jet-print head that proposes according to the present invention and basic manufacture method, those skilled in the art are easy to imitate, and make the ink jet-print head with feature of the present invention.Moreover, those skilled in the art also are easy to change, and change or adjust some material, some prescription and some manufacturing step, but basic principle, basic skills, do not change with basic fundamental, can make the ink jet-print head that it has feature of the present invention equally.
Claims (13)
1. the heat vapor ink-jet print head of an efficient heat transfer, the heating resistor that it is characterized in that printhead is a single crystal silicon resistor; Said single crystal silicon resistor is in the monocrystalline silicon region that heat insulation medium wall separates; The lower surface of said monocrystalline silicon region is the part that direct ink flows to the capillary wall of nozzle; Said capillary comprises that capillary sidewall and top cover are all formed by monocrystalline silicon.
2. method of making the heat vapor ink-jet print head of efficient heat transfer is characterized in that manufacturing step comprises:
Prepare lightly doped silicon chip;
Form heavily doped region on said light dope silicon chip, the middle part of heavily doped region is a rectangle, and two long side limits of rectangle are parallel finger shape;
On said light dope silicon chip, form lightly doped silicon epitaxy layer;
The diaphragm of the anti-HF corrosion of shape on said silicon epitaxy layer;
The diaphragm and the silicon epitaxy layer of said anti-HF corrosion passed through in formation, and the groove that links to each other with said heavily doped region;
In HF corrosion, carry out anodic oxidation, the silicon of said heavily doped region is transformed into porous silicon;
Carry out thermal oxide said porous silicon is transformed into oxidized porous silicon;
Silicon nitride with low-pressure chemical vapor deposition (LPCVD) covers the inner surface formation of said groove silicon nitride wall lining;
Form the monocrystalline silicon heating resistor;
Form the metal line that connects said heating resistor;
Form the phosphosilicate glass passivation layer and fill said groove simultaneously and form the phosphorosilicate glass wall;
Form metal protective film in said passivation layer surface;
Said metal protective film is passed through in formation, the nozzle of silicon nitride film and silicon epitaxy layer;
Carry out anisotropic etch, the rectangle part that forms with said oxidized porous silicon at the said silicon chip back side is the ink container at the end;
(BHF) corrodes said oxidized porous silicon with buffered HF solution, forms the capillary that connects said nozzle and said ink container.
3. method of making the heat vapor ink-jet print head of efficient heat transfer, the resistivity distribution scope of the described light dope silicon chip of its claim 2 is 0.2 to 20 ohmcm.
4. method of making the heat vapor ink-jet print head of efficient heat transfer, the crystal face of the described light dope silicon chip of its claim 2 is (100)/(110) crystal faces.
5. method of making the heat vapor ink-jet print head of efficient heat transfer, the doping content distribution of the described heavily doped region of its claim 2 is 10
18/ cm
3To 10
20/ cm
3
6. method of making the heat vapor ink-jet print head of efficient heat transfer, the resistivity distribution scope of the described lightly doped silicon epitaxy layer of its claim 2 is 0.2 to 20 ohmcm.
7. method of making the hot vapour hot ink-jet print head of efficient heat transfer, the diaphragm of the described anti-HF corrosion of its claim 2 is the low stress nitride silicon layer that low-pressure chemical vapor deposition (LPCVD) forms.
8. method of making the heat vapor ink-jet print head of efficient heat transfer, the diaphragm of the described anti-HF corrosion of its claim 2 is the not doped amorphous carbon silicon layer that plasma reinforced chemical vapour deposition (PECVD) forms.
9. method of making the heat vapor ink-jet print head of efficient heat transfer, the diaphragm of the described anti-HF corrosion of its claim 2 is the amorphous amorphous silicon layer of not doping that plasma reinforced chemical vapour deposition (PECVD) forms.
10. method of making the heat vapor ink-jet print head of efficient heat transfer, the described porous silicon porosity distribution of its claim 2 scope is 50% to 80%.
11. a method of making the heat vapor ink-jet print head of efficient heat transfer, the described oxidized porous silicon oxidate temperature of its claim 2 distribution is 750 ℃ to 900 ℃.
12. a method of making the heat vapor ink-jet print head of efficient heat transfer, the described heating resistor of its claim 2 is the epitaxial silicon resistor.
13. a method of making the heat vapor ink-jet print head of efficient heat transfer, the described heating resistor of its claim 2 is the doped silicon resistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB991007026A CN1140411C (en) | 1999-02-10 | 1999-02-10 | Hot-air ink-jet printing head with high heat-transferring efficiency |
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|---|---|---|---|
| CNB991007026A CN1140411C (en) | 1999-02-10 | 1999-02-10 | Hot-air ink-jet printing head with high heat-transferring efficiency |
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| CN1140411C true CN1140411C (en) | 2004-03-03 |
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| CN110202930A (en) * | 2019-05-28 | 2019-09-06 | 黄春燕 | A kind of small ink dot hot-bubble ink-jetting detection device used based on printer |
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