CN114023735B - Power module for hybrid electric vehicle - Google Patents
Power module for hybrid electric vehicle Download PDFInfo
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- CN114023735B CN114023735B CN202111159033.7A CN202111159033A CN114023735B CN 114023735 B CN114023735 B CN 114023735B CN 202111159033 A CN202111159033 A CN 202111159033A CN 114023735 B CN114023735 B CN 114023735B
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- 239000000758 substrate Substances 0.000 claims abstract description 52
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 21
- 229910052802 copper Inorganic materials 0.000 claims abstract description 21
- 239000010949 copper Substances 0.000 claims abstract description 21
- 230000017525 heat dissipation Effects 0.000 claims abstract description 14
- 239000010410 layer Substances 0.000 claims description 23
- 238000005476 soldering Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 11
- 239000007924 injection Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 6
- 239000011135 tin Substances 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 229910052718 tin Inorganic materials 0.000 claims description 5
- 238000003466 welding Methods 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 3
- 229910007637 SnAg Inorganic materials 0.000 claims description 3
- 229910006913 SnSb Inorganic materials 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 229910052759 nickel Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 229920001296 polysiloxane Polymers 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 2
- 239000000463 material Substances 0.000 claims description 2
- 239000002344 surface layer Substances 0.000 claims description 2
- 238000001746 injection moulding Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 7
- 230000010354 integration Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 101001121408 Homo sapiens L-amino-acid oxidase Proteins 0.000 description 1
- 101000827703 Homo sapiens Polyphosphoinositide phosphatase Proteins 0.000 description 1
- 102100026388 L-amino-acid oxidase Human genes 0.000 description 1
- 102100023591 Polyphosphoinositide phosphatase Human genes 0.000 description 1
- 101100012902 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) FIG2 gene Proteins 0.000 description 1
- 101100233916 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) KAR5 gene Proteins 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
- H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inverter Devices (AREA)
Abstract
Description
技术领域Technical Field
本发明涉及电子器件技术领域，具体涉及一种混动车用功率模块。The present invention relates to the technical field of electronic devices, and in particular to a power module for a hybrid vehicle.
背景技术Background Art
功率模块是一种将电力电子和集成电路技术结合的功率驱动器件，由于具有高集成度、高可靠性等优势，智能功率模块赢得越来越大的市场，尤其适合于驱动电机的变频器及各种逆变电源，是变频调速、冶金机械、电力牵引、伺服驱动和变频家电常用的电力电子器件。随着新能源汽车的发展及大面积的普及和应用，适用性更强的混动方式逐渐成为趋势，顺应市场需求开发拥有更高可靠性、更低杂散电感的功率模块，车用功率模块对模块散热、内部电感、结构及可靠性要求极高，对体积要求亦很严苛。Power module is a power drive device that combines power electronics and integrated circuit technology. Due to its advantages of high integration and high reliability, intelligent power modules have won an increasingly large market. They are especially suitable for frequency converters and various inverter power supplies that drive motors. They are power electronic devices commonly used in variable frequency speed regulation, metallurgical machinery, electric traction, servo drives, and variable frequency home appliances. With the development and widespread popularization and application of new energy vehicles, more applicable hybrid methods have gradually become a trend. In response to market demand, power modules with higher reliability and lower stray inductance have been developed. Automotive power modules have extremely high requirements for module heat dissipation, internal inductance, structure, reliability, and volume requirements.
发明内容Summary of the invention
本发明要解决的技术问题在于，针对现有技术的上述缺陷，提供一种体积小、稳定性强且集成度高的混动车用功率模块。The technical problem to be solved by the present invention is to provide a power module for hybrid vehicles with small size, strong stability and high integration, in view of the above-mentioned defects of the prior art.
本发明的目的是通过如下技术方案来完成的，一种混动车用功率模块，包括用于混动式新能源汽车内的功率模块本体，所述功率模块本体包括绝缘基板及设置在该绝缘基板顶部导电铜层上的功率端子、信号端子、热敏电阻以及绝缘栅双极型晶体管和二极管的芯片部分，所述绝缘基板的底部设置有散热基板；所述功率端子包括分别设置在绝缘基板沿长度方向两侧且相互匹配的若干组输入端功率端子和输出端功率端子，每相的输入端功率端子与输出端功率端子组成一组，且所述输入端功率端子和输出端功率端子均通过分叉的矩形阵脚与对应位置的绝缘基板连接，所述输入端功率端子包括配套设置的正功率端子和负功率端子，相邻两正负功率端子之间采用高低错位布置的交错式分布结构进行引出；所述绝缘基板外设置有一层注塑外壳，绝缘基板上的芯片部分、信号端子、功率端子及热敏电阻之间的空隙通过覆盖填充硅胶层以实现电气隔离。The object of the present invention is to achieve the following technical solution: a power module for a hybrid vehicle, comprising a power module body for a hybrid new energy vehicle, the power module body comprising an insulating substrate and a power terminal, a signal terminal, a thermistor, and a chip portion of an insulated gate bipolar transistor and a diode arranged on a conductive copper layer on the top of the insulating substrate, and a heat dissipation substrate is arranged at the bottom of the insulating substrate; the power terminal comprises a plurality of groups of input power terminals and output power terminals respectively arranged on both sides of the insulating substrate along the length direction and matching each other, the input power terminal and the output power terminal of each phase form a group, and the input power terminal and the output power terminal are connected to the insulating substrate at the corresponding position through a forked rectangular array foot, the input power terminal comprises a positive power terminal and a negative power terminal arranged in a matching manner, and an interlaced distribution structure with a high-low staggered arrangement is adopted between two adjacent positive and negative power terminals for lead-out; a layer of injection molded shell is arranged outside the insulating substrate, and the gaps between the chip portion, the signal terminal, the power terminal and the thermistor on the insulating substrate are covered and filled with a silicone layer to achieve electrical isolation.
进一步地，所述所述芯片部分、信号端子及热敏电阻均通过锡焊焊接在绝缘基板的导电铜层上，所述绝缘基板与散热基板之间通过锡焊焊接，所述功率端子通过超声波焊接或通过锡焊焊接在绝缘基板的导电铜层上；各芯片之间、各芯片的功率部分与绝缘基板相应的导电铜层之间均通过铝线键合进行电气连接。Furthermore, the chip part, signal terminal and thermistor are all soldered to the conductive copper layer of the insulating substrate by soldering, the insulating substrate and the heat dissipation substrate are soldered by soldering, and the power terminal is soldered to the conductive copper layer of the insulating substrate by ultrasonic welding or soldering; the chips and the power part of each chip and the corresponding conductive copper layer of the insulating substrate are electrically connected by aluminum wire bonding.
进一步地，所述注塑外壳包括框形结构的外壳本体及设置在该外壳本体顶部的上盖，所述外壳本体的侧壁上设置有与功率端子位置对应的用于增加爬电距离的矩形槽，所述外壳上设置有贯穿散热基板的导向柱，且所述导向柱的顶部高度高于信号端子的顶部高度。Furthermore, the injection-molded shell includes a shell body with a frame-shaped structure and an upper cover arranged on the top of the shell body, and a rectangular groove corresponding to the position of the power terminal for increasing the creepage distance is arranged on the side wall of the shell body, and a guide column penetrating the heat dissipation substrate is arranged on the shell, and the top height of the guide column is higher than the top height of the signal terminal.
进一步地，所述功率端子通过冲压成型的方式制作而成，功率端子采用纯铜或者铜合金材料制成，功率端子的表层为裸铜或者电镀有一层金、镍或锡材料。Furthermore, the power terminal is made by stamping, the power terminal is made of pure copper or copper alloy material, and the surface layer of the power terminal is bare copper or electroplated with a layer of gold, nickel or tin material.
进一步地，所述锡焊焊接采用SnSb、SnAg、PbSnAg或SnAgCu焊料之一，焊接温度控制在100℃~400℃之间。Furthermore, the soldering uses one of SnSb, SnAg, PbSnAg or SnAgCu solder, and the soldering temperature is controlled between 100°C and 400°C.
本发明的有益技术效果在于：本发明所述的功率端子直接注塑在注塑外壳中，从而有效提高的功率端子的抗振动冲击及安装应力，提高模块可靠性。同时信号端子直接焊接在绝缘基板相应的导电铜层上，减小模块电感，缩小模块体积，提高模块集成度；注塑外壳的外侧还设置有矩形槽可增加爬电距离，其体积小且集成程度高，更适宜应用在对体积和稳定性要求严苛的新能源混动汽车上。The beneficial technical effect of the present invention is that the power terminal of the present invention is directly injection molded in the injection molded shell, thereby effectively improving the vibration impact resistance and installation stress of the power terminal and improving the reliability of the module. At the same time, the signal terminal is directly welded on the corresponding conductive copper layer of the insulating substrate, reducing the module inductance, reducing the module volume, and improving the module integration; the outer side of the injection molded shell is also provided with a rectangular groove to increase the creepage distance. It is small in size and highly integrated, and is more suitable for use in new energy hybrid vehicles with strict requirements on volume and stability.
附图说明BRIEF DESCRIPTION OF THE DRAWINGS
图1为本发明的电路结构示意图；FIG1 is a schematic diagram of a circuit structure of the present invention;
图2为本发明的顶部结构示意图；FIG2 is a schematic diagram of the top structure of the present invention;
图3为本发明的底部结构示意图；FIG3 is a schematic diagram of the bottom structure of the present invention;
图4为本发明的内部布局示意图；FIG4 is a schematic diagram of the internal layout of the present invention;
图5为本发明所述功率模块本体沿长度方向的侧视结构示意图；FIG5 is a schematic diagram of the side structure of the power module body according to the present invention along the length direction;
图6为本发明所述功率模块本体沿宽度方向的侧视结构示意图；FIG6 is a schematic diagram of the side structure of the power module body according to the present invention along the width direction;
图7为本发明所述外壳本体上的矩形槽的结构示意图。FIG. 7 is a schematic structural diagram of a rectangular groove on the housing body of the present invention.
具体实施方式DETAILED DESCRIPTION
为使本领域的普通技术人员更加清楚地理解本发明的目的、技术方案和优点，以下结合附图和实施例对本发明做进一步的阐述。In order to enable those skilled in the art to more clearly understand the objectives, technical solutions and advantages of the present invention, the present invention is further described below in conjunction with the accompanying drawings and embodiments.
在本发明的描述中，需要理解的是，“上”、“下”、“左”、“右”、“内”、“外”、“横向”、“竖向”等术语所指示的方位或位置关系为基于附图所示的方位或位置关系，仅是为了便于描述本发明，而不是指示或暗示所指的装置或原件必须具有特定的方位，因此不能理解为对本发明的限制。In the description of the present invention, it is necessary to understand that the orientation or position relationship indicated by the terms such as "up", "down", "left", "right", "inside", "outside", "horizontal" and "vertical" is based on the orientation or position relationship shown in the accompanying drawings, and is only for the convenience of describing the present invention, rather than indicating or implying that the device or original referred to must have a specific orientation, and therefore cannot be understood as a limitation on the present invention.
如图1-7所示，本发明所述的一种混动车用功率模块，包括用于混动式新能源汽车内的功率模块本体，所述功率模块本体包括绝缘基板2a及设置在该绝缘基板2a顶部导电铜层上的功率端子3a、信号端子4a、热敏电阻5a以及绝缘栅双极型晶体管和二极管的芯片部分1a，所述绝缘基板2a的底部设置有散热基板8a，散热基板8a的底部设置有若干散热针，散热针的形状为矩形、圆柱形、圆台形或椭圆柱形的其中一种。所述功率端子3a包括分别设置在绝缘基板2a沿长度方向两侧且相互匹配的若干组输入端功率端子31a和输出端功率端子32a，每相的输入端功率端子31a与输出端功率端子32a组成一组，功率端子3a共有4组或5组，且所述输入端功率端子31a和输出端功率端子32a均通过分叉的矩形阵脚33a与对应位置的绝缘基板2a连接，输入端功率端子31a和输出端功率端子32a的另一端引出长方体结构的连接片并通过焊接或螺栓连接的方式与模块应用端连接。As shown in FIGS. 1-7 , a hybrid vehicle power module according to the present invention comprises a power module body for use in a hybrid new energy vehicle, wherein the power module body comprises an insulating substrate 2a and a power terminal 3a, a signal terminal 4a, a thermistor 5a, and a chip portion 1a of an insulated gate bipolar transistor and a diode arranged on a conductive copper layer on the top of the insulating substrate 2a. A heat dissipation substrate 8a is arranged at the bottom of the insulating substrate 2a, and a plurality of heat dissipation pins are arranged at the bottom of the heat dissipation substrate 8a, and the shape of the heat dissipation pins is one of a rectangular, cylindrical, truncated cone or elliptical cylinder. The power terminals 3a include a plurality of groups of input power terminals 31a and output power terminals 32a which are respectively arranged on both sides of the insulating substrate 2a along the length direction and match each other. The input power terminal 31a and the output power terminal 32a of each phase form a group. There are 4 or 5 groups of power terminals 3a in total. The input power terminals 31a and the output power terminals 32a are connected to the insulating substrate 2a at the corresponding position through forked rectangular array pins 33a. The other ends of the input power terminals 31a and the output power terminals 32a lead out connecting pieces of a rectangular structure and are connected to the module application end by welding or bolting.
功率端子3a通过冲压成型的方式制作而成，功率端子3a采用纯铜或者铜合金材料制成，功率端子3a的表层为裸铜或者电镀有一层金、镍或锡等可焊接金属材料之一。其中，所述输入端功率端子31a包括配套设置的正功率端子和负功率端子，相邻两正负功率端子之间采用高低错位布置的交错式分布结构进行引出，正负功率端子采用层叠结构，端子层叠间隙在1-4mm之间；其外侧的引出端以交错分布方式引出，交错距离在1-4mm之间。所述绝缘基板2a外设置有一层注塑外壳7a，绝缘基板2a上的芯片部分1a、信号端子4a、功率端子3a及热敏电阻5a之间的空隙通过覆盖填充硅胶层以实现电气隔离。The power terminal 3a is made by stamping. The power terminal 3a is made of pure copper or copper alloy. The surface of the power terminal 3a is bare copper or electroplated with a layer of gold, nickel or tin or other weldable metal materials. The input power terminal 31a includes a positive power terminal and a negative power terminal, and the adjacent positive and negative power terminals are led out in a staggered distribution structure with high and low staggered arrangement. The positive and negative power terminals adopt a stacked structure, and the terminal stacking gap is between 1-4mm; the lead-out terminals on the outside are led out in a staggered distribution manner, and the staggered distance is between 1-4mm. A layer of injection molded shell 7a is arranged outside the insulating substrate 2a, and the gaps between the chip part 1a, the signal terminal 4a, the power terminal 3a and the thermistor 5a on the insulating substrate 2a are covered with a silicone layer to achieve electrical isolation.
参照图1-7所示，所述所述芯片部分1a、信号端子4a及热敏电阻5a均通过锡焊焊接在绝缘基板的导电铜层上，所述绝缘基板2a与散热基板8a之间通过锡焊焊接，所述功率端子3a通过超声波焊接或通过锡焊焊接在绝缘基板2a的导电铜层上，所述锡焊焊接采用SnSb、SnAg、PbSnAg或SnAgCu等含Sn焊料之一，焊接温度控制在100℃~400℃之间。各芯片1a之间、各芯片1a的功率部分与绝缘基板2a相应的导电铜层之间均通过铝线键合进行电气连接。As shown in Fig. 1-7, the chip part 1a, signal terminal 4a and thermistor 5a are all soldered on the conductive copper layer of the insulating substrate, the insulating substrate 2a and the heat dissipation substrate 8a are soldered, and the power terminal 3a is soldered on the conductive copper layer of the insulating substrate 2a by ultrasonic welding or soldering. The soldering adopts one of Sn-containing solders such as SnSb, SnAg, PbSnAg or SnAgCu, and the soldering temperature is controlled between 100°C and 400°C. The chips 1a and the power part of each chip 1a and the corresponding conductive copper layer of the insulating substrate 2a are electrically connected by aluminum wire bonding.
参照图1-7所示，所述注塑外壳7a包括框形结构的外壳本体及设置在该外壳本体顶部的上盖71a，所述外壳本体的侧壁上设置有与功率端子3a位置对应的用于增加爬电距离的矩形槽6a，所述外壳7a上设置有贯穿散热基板8a的导向柱9a，且所述导向柱9a的顶部高度高于信号端子的顶部高度，导向柱9a的连线与外壳本体7a的长边夹角在30°~45°之间。As shown in Figures 1-7, the injection molded shell 7a includes a shell body of a frame-shaped structure and an upper cover 71a arranged on the top of the shell body, and a rectangular groove 6a corresponding to the position of the power terminal 3a for increasing the creepage distance is arranged on the side wall of the shell body. A guide column 9a penetrating the heat dissipation substrate 8a is arranged on the shell 7a, and the top height of the guide column 9a is higher than the top height of the signal terminal, and the angle between the connecting line of the guide column 9a and the long side of the shell body 7a is between 30° and 45°.
本发明所述的功率端子直接注塑在注塑外壳中，从而有效提高的功率端子的抗振动冲击及安装应力，提高模块可靠性。同时信号端子直接焊接在绝缘基板相应的导电铜层上，减小模块电感，缩小模块体积，提高模块集成度；注塑外壳的外侧还设置有矩形槽可增加爬电距离，其体积小且集成程度高，更适宜应用在对体积和稳定性要求严苛的新能源混动汽车上。The power terminal of the present invention is directly injection molded in the injection molded housing, thereby effectively improving the vibration and impact resistance and installation stress of the power terminal and improving the reliability of the module. At the same time, the signal terminal is directly welded on the corresponding conductive copper layer of the insulating substrate, reducing the module inductance, reducing the module volume, and improving the module integration; the outer side of the injection molded housing is also provided with a rectangular groove to increase the creepage distance. It is small in size and highly integrated, and is more suitable for use in new energy hybrid vehicles with strict requirements on volume and stability.
本文中所描述的具体实施例仅例示性说明本发明的原理及其功效，而非用于限制本发明。任何熟悉此技术的人士皆可在不违背本发明的精神及范畴下，对上述实施例进行修饰或改变。因此，但凡所属技术领域中具有通常知识者在未脱离本发明所揭示的精神与技术思想下所完成的一切等效修饰或改变，仍应由本发明的权利要求所涵盖。The specific embodiments described herein are merely illustrative of the principles and effects of the present invention and are not intended to limit the present invention. Anyone familiar with the art may modify or alter the above embodiments without departing from the spirit and scope of the present invention. Therefore, all equivalent modifications or alterations made by a person of ordinary skill in the art without departing from the spirit and technical ideas disclosed by the present invention shall still be covered by the claims of the present invention.
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