CN1140124A - Method and apparatus for processing reference plane of Si 111 crystal ingot with one-step process - Google Patents
Method and apparatus for processing reference plane of Si 111 crystal ingot with one-step process Download PDFInfo
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- CN1140124A CN1140124A CN 96116256 CN96116256A CN1140124A CN 1140124 A CN1140124 A CN 1140124A CN 96116256 CN96116256 CN 96116256 CN 96116256 A CN96116256 A CN 96116256A CN 1140124 A CN1140124 A CN 1140124A
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- 238000000034 method Methods 0.000 title claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N silicon Chemical compound data:image/svg+xml;base64,<?xml version='1.0' encoding='iso-8859-1'?>
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 [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 230000004447 accommodation reflex Effects 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- 238000005755 formation reaction Methods 0.000 claims description 3
- 238000003754 machining Methods 0.000 abstract description 3
- 210000000614 Ribs Anatomy 0.000 description 17
- 238000007796 conventional method Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000019771 cognition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 230000011514 reflex Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Abstract
An one-step method and its apparatus for machining reference plane of Si-111 crystal ingot feature that the flat arris on external surface of the crystal ingot is used for orientation and the rounding of crystal ingot, orientation of reference plane and machining of reference plane are completed on same rounding machine. Said apparatus is composed of rounding machine, laser devices S1 and S2, reflector H and screen P. The S1 is installed above rounding machine and the reflector H is installed to main shaft of rounding machine. Its advantages are its productivity increased by 2 times and reference plane deviation less than 0.1.
Description
The present invention relates to the used method and apparatus of semi-conducting material retrofit.
The processing of the silicon 111 crystal ingot plane of references commonly used is divided into that crystal ingot is round as a ball, the plane of reference is directed and three operations of the mill plane of reference, needs finish on 2 or 3 equipment.
Orientation method commonly used at present is the directed method of X-ray diffraction.According to the theory of solids, crystal can be considered a series of planes that spacing is the atomic layer composition of d, when a branch of parallel monochromatic X-ray people is mapped on these planes, will produce diffraction phenomena.The wavelength of supposing X-ray is λ, and the incidence angle of X-ray equals angle of emergence θ, and then the diffraction light intensity reaches maximum when satisfying n λ=2d sin θ, and n is 0 or integer in the formula,
A is the length of side of crystal cubic cell, h, and l, k are the Miller index of crystal face.As long as determined the angle θ of n and diffraction maximum correspondence conversely, can determine crystal face.For silicon single crystal, the crystal orientation of main reference plane is 220 directions, and the angle of diffraction (n=1) is θ=23.7 °.
Use the conventional method machine silicon 111 crystal ingot plane of references, be divided into three process such as crystal ingot is round as a ball, X ray is directed, the mill plane of reference and carry out, can not once finish on spheronizator, production efficiency is difficult to improve; Applying X-ray diffractometer orientation, though orientation accuracy is higher, owing to be not directly directed on spheronizator, the plane of reference deviation after the processing is about 0.5 °, and the equipment complexity, the instrument price is higher, careless manipulation, X ray damages people's cognition.
The object of the present invention is to provide a kind of method and apparatus of the simple effective and high-precision one-step method machine silicon 111 crystal ingot plane of references, three process such as crystal ingot is round as a ball, the plane of reference is directed, the mill plane of reference are once finished on same spheronizator.The process equipment of the crystal ingot plane of reference is made of two laser instruments of spheronizator configuration, speculum and screen, and wherein laser instrument, speculum and screen constitute the directional component of the crystal ingot plane of reference, and screen can be born by the skyization plate of workplace.Use this programme and the three process of routine can be reduced to together, work efficiency improves more than the twice,
Realize that the object of the invention adopts following technical measures:
1, the outer surface of primary silicon 111 monocrystalline crystal ingots has two characteristics, the one, the crystal outer surface have three three degree symmetries be called flat rib the plane, the 2nd, many fine rules are arranged on the direction vertical with crystal growth direction.Utilize the orthogonal relation of the plane of reference of flat rib and silicon 111 crystal ingots, the direction of determining flat rib has promptly been determined the direction of the plane of reference.
2, very close through the experiment confirm fine rule vertical with crystal growth direction, be similar to a series of slits.According to diffraction theory, when a branch of parallel monochromatic light is radiated at above the slit,, place a screen at a distance owing to disperse takes place diffraction, then can form a diffraction pattern on the screen perpendicular to slit.At non-flat rib place, the surface of crystal ingot is the face of cylinder, so diffraction pattern broad and intensity are very weak, and at flat rib place, diffraction surfaces is the plane, diffraction intensity and elongated, and the direction of flat rib can be determined in the therefore position that takes place according to strong diffraction effect.Utilize flat rib and, can determine the direction of the plane of reference with reference to relation of plane.
3, above spheronizator, place a laser instrument, the bistrique plane parallel of light that requirement is sent and spheronizator is also passed through the center line of spheronizator main shaft, datum line is light beam and the plane of spheronizator spindle centerline formation and the intersection of screen that this laser instrument sends, crystal ingot is clipped on the main shaft of spheronizator, rotating crystal ingot makes the light that sends from laser instrument be radiated on the flat rib of crystal ingot, rotate crystal ingot and make the projection of diffraction light on screen overlap, determine the accurate direction of flat rib with this with datum line.
4, determine flat rib direction after, utilize another laser instrument and a speculum that is arranged on the spheronizator main shaft to come the flat rib direction of mark.The accommodation reflex mirror makes reverberation overlap with the reference point of setting on screen in advance in the projection on the screen; Then round as a ball to crystal ingot, rotate crystal ingot round as a ball finishing after, make light that spheronizator main shaft upper reflector reflects overlap with reference point on the screen again in the projection on the screen; Start the plane of reference that spheronizator grinds crystal ingot.
Utilize abovementioned technology, crystal ingot round as a ball, the plane of reference is directed and plane of reference processing can once be finished on same spheronizator, can improve the orientation accuracy of the work efficiency and the plane of reference exponentially.
Fig. 1 is the flat rib on the silicon 111 crystal ingot outer surfaces and the mutual vertical relation schematic diagram of the plane of reference, is one in three the flat ribs that only drawn among the figure for purpose of brevity.
Fig. 2 is silicon 111 a crystal ingot plane of reference process equipment structural representations.
Below in conjunction with description of drawings, be described in detail particular content of the present invention.
M, N are respectively flat rib and the plane of reference of crystal ingot among Fig. 1, and both are mutually vertical. Among Fig. 2 S1, S2 are two laser instruments, and H is speculum, and P is screen, and AB is for determining flat rib direction Datum line, this datum line AB is that the laser beam that sends of S1 and spheronizator spindle centerline consist of The plane and the intersection of screen P, C is the reference point of setting at screen in advance.
A kind of method of processing reference plane of Si 111 crystal ingot with one-step process comprises that crystal ingot is round as a ball and grind the plane of reference, it is characterized in that adopting following steps:
A) silicon 111 crystal ingots are clamped on the spheronizator, start laser instrument S1, laser is mapped to crystal ingot A flat rib M on, rotate crystal ingot, the diffracted ray that produces at the flat rib M of crystal ingot to laser beam Projection on screen P overlaps with datum line AB, then starts laser instrument S2, and laser is mapped to Be arranged on the speculum H on the spheronizator main shaft, accommodation reflex mirror H, its reverberation is at screen On projection overlap with reference Point C;
B) starting spheronizator carries out round as a ball to silicon 111 crystal ingots;
C) rotate crystal ingot, the light that sends to laser instrument S2 behind the speculum h reflex again with screen On reference Point C overlap the locking crystal ingot;
D) start the plane of reference N that spheronizator processes crystal ingot.
A kind of equipment of implementing said method, it is characterized in that this equipment is made of spheronizator, laser instrument S1 and S2, speculum H, screen P, wherein the light beam and the spheronizator spindle centerline that send of laser instrument S1 is in the same plane, this plane and bistrique plane parallel, speculum H is arranged on the spheronizator main shaft, the light beam that laser instrument S2 sends is mapped on the speculum H, datum line AB is light beam and the plane of spheronizator spindle centerline formation and the intersection of screen P that laser instrument S1 sends, reference Point C is marked on the screen, and this screen (P) is a ceiling.
Laser instrument S2 is arranged on the round as a ball support, perhaps is installed on the wall, perhaps on the ceiling.
Compared with the prior art, the present invention has following advantage:
1, can finish on spheronizator that crystal ingot is round as a ball, the plane of reference is directed, mill plane of reference three process, improve more than the work efficiency twice, plane of reference machining deviation is less than 0.1 °, and use conventional method, crystal ingot is round as a ball, the plane of reference is directed and the mill plane of reference must be finished on different equipment, both influence production efficiency, also influenced the precision of plane of reference orientation.
2, equipment advantages of simple, cost is low, and a need disposes two laser instruments on spheronizator and a speculum gets final product.
3, go for silicon 111 crystal ingots of various diameter specifications, and need not equipment is adjusted.
Embodiment:
Adopt structure equipment as shown in Figure 2, one-step method machine silicon 111 crystal ingot plane of reference N, establishing crystal ingot is D apart from the distance of screen, and naked eyes judge that the error that diffracted ray light overlaps with datum line AB is Δ d, and then orientation error is
Set D=2500mm, Δ d=5mm, then theoretical orientation error is 0.06 °, with this method processing back plane of reference actual deviation is 0.1, much smaller than 1.0 ° of silicon 111 plane of reference deviations of 2.0 ° of silicon 111 plane of reference deviations of standard GB 129620-91 regulation and U.S. SEMI standard SEMI1987 regulation.
Claims (3)
1, a kind of method of the one-step method machine silicon 111 crystal ingot plane of references comprises that crystal ingot is round as a ball and grind the plane of reference, it is characterized in that adopting following steps:
A) silicon 111 crystal ingots are clamped on the spheronizator, start laser instrument (S1), laser is mapped on the flat rib (M) of crystal ingot, rotate crystal ingot, go up the projection of diffracted ray on screen (P) that produces to laser beam at the flat rib of crystal ingot (M) and overlap with datum line (AB), then start laser instrument (S2), laser is mapped on the speculum (H) that is arranged on the spheronizator main shaft, accommodation reflex mirror (H), the projection of its reverberation on screen overlaps with reference point (C);
B) starting spheronizator carries out round as a ball to silicon 111 crystal ingots;
C) rotate crystal ingot, the light that sends to laser instrument (S2) overlaps with reference point (C) on the screen after speculum (H) reflection again, locks crystal ingot;
D) start the plane of reference (N) that spheronizator processes crystal ingot.
2, a kind of equipment of implementing the described method of claim 1, it is characterized in that this equipment is by spheronizator, laser instrument (S1) and (S2), speculum (H), screen (P) constitutes, wherein the light beam and the spheronizator spindle centerline that send of laser instrument (S1) is in the same plane, this plane and bistrique plane parallel, speculum (H) is arranged on the spheronizator main shaft, the light beam that laser instrument (S2) sends is mapped on the speculum (H), datum line (AB) is light beam and the plane of spheronizator spindle centerline formation and the intersection of screen (P) that laser instrument (S1) sends, and reference point (C) is marked on the screen.
3, equipment according to claim 2 is characterized in that screen (P) is a ceiling.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96116256A CN1063378C (en) | 1996-02-14 | 1996-02-14 | Method and apparatus for processing reference plane of Si 111 crystal ingot with one-step process |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN96116256A CN1063378C (en) | 1996-02-14 | 1996-02-14 | Method and apparatus for processing reference plane of Si 111 crystal ingot with one-step process |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1140124A true CN1140124A (en) | 1997-01-15 |
| CN1063378C CN1063378C (en) | 2001-03-21 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN96116256A CN1063378C (en) | 1996-02-14 | 1996-02-14 | Method and apparatus for processing reference plane of Si 111 crystal ingot with one-step process |
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| CN (1) | CN1063378C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103552166A (en) * | 2013-09-30 | 2014-02-05 | 洛阳鸿泰半导体有限公司 | Device for adjusting crystal-orientation deviation degree of silicon rod |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2074480B (en) * | 1980-04-23 | 1983-04-07 | Gersan Etablishment | Working gemstones |
| CN85104898B (en) * | 1985-06-24 | 1987-12-16 | 西安交通大学 | The hole optic fibre amount appearance is puted in cylindricalo grinding online in order |
| US4884887A (en) * | 1987-01-23 | 1989-12-05 | Hewlett-Packard Company | Method for positioning a crystal ingot |
| IL86762A (en) * | 1988-06-16 | 1991-04-15 | Hargem Ltd | Centering apparatus for a gemstone |
| US5410125A (en) * | 1990-10-11 | 1995-04-25 | Harry Winston, S.A. | Methods for producing indicia on diamonds |
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1996
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103552166A (en) * | 2013-09-30 | 2014-02-05 | 洛阳鸿泰半导体有限公司 | Device for adjusting crystal-orientation deviation degree of silicon rod |
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| Publication number | Publication date |
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| CN1063378C (en) | 2001-03-21 |
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