CN114005900A - Efficient III-V group/silicon two-end laminated solar cell - Google Patents

Efficient III-V group/silicon two-end laminated solar cell Download PDF

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CN114005900A
CN114005900A CN202111359268.0A CN202111359268A CN114005900A CN 114005900 A CN114005900 A CN 114005900A CN 202111359268 A CN202111359268 A CN 202111359268A CN 114005900 A CN114005900 A CN 114005900A
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cell
iii
silicon
solar cell
gainp
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张晓丹
李兴亮
李仁杰
任宁宇
陈兵兵
许盛之
侯国付
赵颖
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Nankai University
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
    • H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
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    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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    • H01L31/02366—Special surface textures of the substrate or of a layer on the substrate, e.g. textured ITO/glass substrate or superstrate, textured polymer layer on glass substrate
    • H—ELECTRICITY
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    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/043—Mechanically stacked PV cells
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Abstract

A high-efficiency III-V group/silicon two-end laminated solar cell adopts a crystal silicon cell with a textured front surface as a bottom cell and forms a two-end laminated structure with a planar III-V top cell through a transparent conductive adhesive. The invention develops a stacked cell technology of III-V group and crystalline silicon based on transparent conductive adhesive bonding, adopts a textured crystalline silicon cell as a bottom cell, increases the long wave absorption of the bottom cell, and solves the problem that the crystalline silicon bottom cell is incompatible with the commercial textured crystalline silicon cell process. Namely, the bridging between the planar III-V group top battery and the crystalline silicon bottom battery with the front surface suede is realized by utilizing the transparent conductive adhesive containing the conductive particles with large particle size. The adhesive has high transmittance and high longitudinal conductivity, and can obtain a high-efficiency laminated cell and open a new space for the commercial application of the subsequent III-V group and crystal silicon two-end laminated cells.

Description

Efficient III-V group/silicon two-end laminated solar cell
Technical Field
The invention relates to the technical field of solar cells, in particular to design and preparation of an efficient III-V group/silicon two-end laminated solar cell.
Background
Group III-V and crystalline silicon tandem cells have attracted much attention in recent years due to the higher conversion efficiencies that can be achieved. The III-V group and crystal silicon laminated cells at two ends are more compatible with the preparation process of large-scale components in the current photovoltaic market, so that the III-V group and crystal silicon laminated cells are the key points for the current research on the III-V group and crystal silicon laminated cells. The III-V group and crystal silicon laminated cell at two ends mainly has three modes: epitaxial growth, wafer bonding, mechanical stacking. Since 1985, the first III-V/silicon two-terminal tandem solar cell was prepared, and the conversion efficiency of the tandem cell has increased from 17.6% to 35.9%. The major research units for III-V/silicon two-terminal tandem solar cells with efficiency over 30% reported at present include Dimroth group of fraunhofer laboratories, germany, and Makita group of advanced industrial science and technology institute (AIST), japan. It is worth pointing out that the difference in thermal expansion coefficient is large because the lattice constant of silicon and the lattice constant of GaAs are different by 4% (GaAs ═ 5.73 × 10)-6℃-1，Si＝2.6×10-6℃-1) And GaAs is a polar material and Si is a non-polar material, so that high-quality GaAs material is difficult to epitaxially grow on a Si substrate. The maximum efficiency of the III-V group and crystalline silicon laminated cell at two ends of the epitaxial growth is only 25.9 percent at present. Ga at two ends is prepared by a wafer bonding method in a Dimroth group of Germany Furoff laboratory0.51In0.49P/Ga0.93In0.07As0.87P0.13// Si laminate cell, efficiency was 35.9%. However, wafer bonding requires an ultra-clean experimental environment, with atomic-level polishingSurface (roughness)<0.5nm), high quality tunnel junctions and expensive bonding equipment, and are therefore not suitable for industrial production. The Makita group of Japanese AIST adopts a mechanical stacking method and adopts Pd metal nano-array bonding to prepare Ga with the efficiency of 30.8 percent at two ends0.51In0.49P/AlGaAs// Si laminated cell, however, the size of Pd metal nano array is only 50nm, the bonding strength is low, and the Pd metal nano array can only be prepared on a plane by spin coating, and is not compatible with the prior textured silicon cell. From the results published at present, all the two-end III-V and crystal silicon tandem cells adopt crystal silicon cells with polished front surfaces, which increases the manufacturing cost, causes interface reflection, and is not beneficial to the absorption of long waves by the silicon cells and causes current limitation of bottom cells.
In summary, the deficiencies of the existing double-ended III-V and crystal silicon tandem cell technology can be summarized as follows: 1) the silicon battery with polished front surface is used as a bottom battery, so that the reflection loss of III-V group and Si interfaces is serious, the near infrared absorption of the silicon battery is poor, and the current limiting of the bottom battery is caused. 2) The silicon cell with polished front surface is incompatible with the commercial crystal silicon cell with commercial suede at present, which is not only unfavorable for the efficiency of the cell, but also increases the manufacturing cost, and is unfavorable for the practical application of the cell.
Disclosure of Invention
The invention aims to overcome the defects in the prior art, and provides a III-V/crystalline silicon laminated cell with two ends bonded by a transparent conductive adhesive, wherein a textured crystalline silicon cell is used as a bottom cell, so that the III-V/crystalline silicon laminated cell with higher efficiency and lower cost is obtained. Compared with the prior art, the method also has the following advantages: 1) the problem that the existing III-V family and crystal silicon laminated cell at two ends is incompatible with a commercial crystal silicon cell of a suede is solved, and the manufacturing cost is reduced; 2) compared with a planar crystalline silicon battery, the textured crystalline silicon battery has better near infrared absorption and higher current density; 3) the transparent conductive adhesive has high transparency, is longitudinally conductive and transversely non-conductive, and avoids shunting effect; 4) the transparent conductive adhesive has the characteristic of higher long-wave permeability, and can effectively improve the long-wave absorption of the bottom battery.
The technical scheme of the invention is as follows:
a high-efficiency III-V group/silicon two-end laminated solar cell adopts a crystal silicon cell with a textured front surface as a bottom cell, and forms a two-end laminated structure with a planar III-V top cell through a transparent conductive adhesive; in the two-end laminated cell, the photoelectric property of the bonding layer is adjusted by changing the proportion of the conductive particles in the transparent conductive adhesive, so that the current matching and bridging of the top cell and the bottom cell are realized.
The III-V top battery is of a single-junction GaInP, AlGaAs and GaAs structure, or a two-junction GaInP/GaAs, GaInP/AlGaAs and GaInAsP structure, or a three-junction AlGaInP/AlGaAs/GaAs, AlGaInP/GaInP/AlGaInAs structure, or a four-junction AlGaInP/GaInP/GaInAs and AlGaInP/AlGaAs/GaAs structure. The III-V top battery is prepared by adopting a liquid phase epitaxy technology (LPE), or a metal organic chemical vapor deposition technology (MOCVD), or a molecular beam epitaxy technology (MBE).
The conductive particles of the transparent conductive adhesive are metal-coated polymethyl methacrylate (PMMA) microspheres. The coating metal of the surface of the conductive particles of the transparent conductive adhesive is one of gold, silver, copper, platinum or palladium. The conductive particle size of the transparent conductive adhesive is 1 to 50 μm. The polymer in the transparent conductive adhesive is epoxy resin.
The crystalline silicon battery is a double-velvet crystalline silicon battery or a crystalline silicon battery with a front surface velvet surface. The pyramid size of the crystalline silicon cell is 1-50 μm. The crystal silicon battery is a HJT battery, a TOP-Con battery, a POLO battery, a DASH battery, a PERC, a PERL or a PERT battery with a suede front surface.
The invention has the advantages and positive effects that:
according to the invention, the textured silicon cell is used as the bottom cell of the laminated cell, so that the reflection loss can be effectively reduced, the current of the bottom cell is increased, and the EQE integral current of the silicon cell is increased by 0.6mA/cm2The manufacturing cost is reduced; meanwhile, the transparent conductive adhesive is adopted for bonding, and the transparent polymer is transparent in the long wave band absorbed by the bottom battery, so that the long wave absorption is effectively improved; adjusting the photoelectric property of the bonding layer by changing the proportion of the conductive particles in the transparent conductive adhesiveWhen the proportion of the conductive particles is increased from 0.05 wt% to 0.5 wt%, the EQE integrated current of the silicon cell is increased by 0.9mA/cm2The filling factor of the laminated battery is increased by 3.5%, and the efficiency is increased from 20.7% to 25.1%; on the other hand, the metal-coated flexible polymer microspheres are used as conductive particles, so that the contact area is increased by extrusion deformation, the conductive particles are compatible with textured pyramids, the longitudinal conductivity is high, the transverse conductivity is non-conductive, the shunt effect is effectively avoided, the high open voltage of the laminated battery is ensured, the contact resistance of the battery is reduced, the filling factor is increased from 75.3% to 80.3%, and the III-V group/crystalline silicon laminated battery with higher efficiency is obtained.
The mechanism analysis of the invention is as follows:
according to the invention, the textured crystalline silicon battery is used as the bottom battery of the III-V group and crystalline silicon batteries at two ends, the long wave absorption of the bottom battery is increased, the short-circuit current of the laminated battery is improved, and the EQE integral current of the silicon battery is increased by 0.6mA/cm2The high III-V group and crystal silicon laminated cell efficiency is realized, and the photoelectric conversion efficiency is increased from 22.1% to 25.1%. Meanwhile, the photoelectric property of the bonding layer is adjusted by changing the proportion of the conductive particles in the transparent conductive adhesive, and when the proportion of the conductive particles is increased from 0.05 wt% to 0.5 wt%, the integrated current of the silicon battery EQE is increased by 0.9mA/cm2The filling factor of the laminated cell is increased by 3.5%, which shows that the optical and electrical properties of the transparent conductive adhesive are effectively increased; when the proportion of the conductive particles is increased from 0.5 wt% to 2.5 wt%, the EQE integrated current of the silicon cell is reduced by 0.84mA/cm2The fill factor of the laminate battery is reduced by 1.2%, which means that the permeation of the conductive adhesive is reduced, and at the same time, the conductive particles are increased to cause partial agglomeration, and the loss of electrical properties occurs, so that the optimum proportion of the conductive particles is 0.5 wt%. In addition, the flexible polymer microspheres coated with metal are used as conductive particles, so that the extrusion deformation is met to increase the contact area, the contact resistance is reduced, and the filling factor of the laminated battery is improved; the invention adopts the transparent conductive adhesive, has high longitudinal conductivity and low transverse conductivity, and effectively reduces the shunting effect.
Drawings
FIG. 1 is a schematic structural diagram of a triple-junction GaInP/AlGaAs/Si tandem solar cell using a textured silicon Heterojunction (HJT) solar cell as a bottom cell according to the present invention;
FIG. 2 is a voltage-current characteristic curve diagram of a triple-junction GaInP/AlGaAs/Si tandem solar cell prepared by a transparent conductive adhesive based on a textured silicon heterojunction bottom cell and 0.05 wt% of silver conductive particles;
FIG. 3 is a voltage-current characteristic curve diagram of a triple-junction GaInP/AlGaAs/Si tandem solar cell prepared by a transparent conductive adhesive based on a textured silicon heterojunction bottom cell and 0.5 wt% of silver conductive particles according to the invention;
FIG. 4 is a voltage-current characteristic curve diagram of a triple-junction GaInP/AlGaAs/Si tandem solar cell prepared by a transparent conductive adhesive based on a textured silicon heterojunction bottom cell and 2.5 wt% of silver conductive particles.
FIG. 5 is a voltage-current characteristic curve diagram of a triple-junction GaInP/AlGaAs/Si tandem solar cell prepared by a transparent conductive adhesive based on a planar silicon heterojunction bottom cell and 0.5 wt% of silver conductive particles.
Detailed Description
The technical solution of the present invention will be further described in detail with reference to the accompanying drawings and specific embodiments.
Example 1:
the III-V group/silicon heterojunction laminated solar cell used by the invention sequentially comprises the following components from top to bottom: Au/Ag and GaAs contact layer of front metal grid line electrode, ZnS/MgF2The solar cell comprises an antireflection film, an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field, a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field, a p-GaAs contact layer, an ITO connecting layer, a transparent conductive adhesive, an ITO connecting layer, a silicon heterojunction bottom cell electron selection layer n-a-Si H, a passivation layer i-a-Si H, a silicon substrate n-Si, a passivation layer i-a-Si H, a hole selection layer p-a-Si H and a back electrode Al.
In the III-V group/silicon heterojunction laminated solar cell, the band gap of the GaInP absorption layer is 1.91eV, the band gap of the AlGaAs absorption layer is 1.51eV, and the area is 2.2 multiplied by 2.2cm2。
The III-V/silicon heterojunction tandem solar cell of the present example was prepared by the following method:
1. and placing the textured N-type Fz silicon wafer substrate in a PECVD system with high vacuum degree, and depositing an intrinsic amorphous silicon passivation layer i-a-Si: H on the front surface and the back surface of the silicon wafer respectively.
2. Then, one side is selected to deposit an electron selection layer n-a-Si: H by adopting a PECVD mode, and the other side is deposited with a hole selection layer p-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer p-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing an 80nm ITO material serving as a connecting layer on the n-a-Si: H by adopting an electron beam thermal evaporation mode.
5. A GaAs substrate with the n-type (100) crystal plane inclined at 6 ° along the <100> B crystal direction was placed in the MOCVD system, a 100nm thick GaInP barrier layer was deposited on the front surface, and then a 50nm GaAs contact layer was deposited.
6. And an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field and a p-AlGaAs contact layer are sequentially deposited on the GaAs contact layer.
7. And a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field and a p-GaAs contact layer are sequentially deposited on the p-AlGaAs contact layer.
8. An 80nm ITO material is prepared as a connecting layer in an electron beam thermal evaporation mode.
9. And (3) uniformly stirring 20g of epoxy glue 301A and 5g of epoxy glue 301B, adding 0.0125g of silver-plated polymethyl methacrylate (PMMA) microspheres, and uniformly stirring to prepare the transparent conductive adhesive.
10. And (3) taking 100 mu L of the adhesive prepared in the step (9) to be coated on the ITO connecting layer of the HJT bottom battery in a spinning mode.
11. And bonding the GaInP/AlGaAs top battery and the HJT bottom battery by using a hot press at the hot pressing temperature of 65 ℃ for 120 min.
12. After the laminated cell is prepared, the GaAs substrate is stripped by adopting a mixed solution of concentrated sulfuric acid and hydrogen peroxide, the GaInP barrier layer is stripped by adopting concentrated HCl, and the GaAs contact layer is stripped by adopting a mixed solution of citric acid and hydrogen peroxide after the metal electrode is evaporated.
13. A specific stacked cell structure is shown in fig. 1.
The experimental effect is as follows: to proceed to the sunPerformance testing of the cell, as shown in FIG. 2, at AM1.5G, 100mW/cm2Under the irradiation of standard light intensity, the open-circuit voltage of the solar cell prepared by the embodiment is 2.832V, and the short-circuit current density is 9.5mA/cm2The fill factor is 76.8%, and the efficiency is 20.7%.
Example 2:
the III-V group/silicon heterojunction laminated solar cell used in the method sequentially comprises the following components from top to bottom: Au/Ag and GaAs contact layer of front metal grid line electrode, ZnS/MgF2The solar cell comprises an antireflection film, an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field, a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field, a p-GaAs contact layer, an ITO connecting layer, a transparent conductive adhesive, an ITO connecting layer, a silicon heterojunction bottom cell electron selection layer n-a-Si H, a passivation layer i-a-Si H, a silicon substrate n-Si, a passivation layer i-a-Si H, a hole selection layer p-a-Si H and a back electrode Al.
In the III-V group/silicon heterojunction laminated solar cell, the band gap of the GaInP absorption layer is 1.91eV, the band gap of the AlGaAs absorption layer is 1.51eV, and the area is 2.2 multiplied by 2.2cm2。
The III-V/silicon heterojunction tandem solar cell of the present example was prepared by the following method:
1. and placing the textured N-type Fz silicon wafer substrate in a PECVD system with high vacuum degree, and depositing an intrinsic amorphous silicon passivation layer i-a-Si: H on the front surface and the back surface of the silicon wafer respectively.
2. Then, one side is selected to deposit an electron selection layer n-a-Si: H by adopting a PECVD mode, and the other side is deposited with a hole selection layer p-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer p-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing an 80nm ITO material serving as a connecting layer on the n-a-Si: H by adopting an electron beam thermal evaporation mode.
5. A GaAs substrate with the n-type (100) crystal plane inclined at 6 ° along the <100> B crystal direction was placed in the MOCVD system, a 100nm thick GaInP barrier layer was deposited on the front surface, and then a 50nm GaAs contact layer was deposited.
6. And an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field and a p-AlGaAs contact layer are sequentially deposited on the GaAs contact layer.
7. And a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field and a p-GaAs contact layer are sequentially deposited on the p-AlGaAs contact layer.
8. An 80nm ITO material is prepared as a connecting layer in an electron beam thermal evaporation mode.
9. And (3) uniformly stirring 20g of epoxy glue 301A and 5g of epoxy glue 301B, adding 0.125g of silver-plated polymethyl methacrylate (PMMA) microspheres, and uniformly stirring to prepare the transparent conductive adhesive.
10. 100 μ L of the adhesive prepared in step 9 was spin coated on the bottom cell ITO connection layer.
11. And bonding the GaInP/AlGaAs top battery and the HJT bottom battery by using a hot press at the hot pressing temperature of 65 ℃ for 120 min.
12. After the laminated cell is prepared, the GaAs substrate is stripped by adopting a mixed solution of concentrated sulfuric acid and hydrogen peroxide, the GaInP barrier layer is stripped by adopting concentrated HCl, and the GaAs contact layer is stripped by adopting a mixed solution of citric acid and hydrogen peroxide after the metal electrode is evaporated.
The experimental effect is as follows: performance testing of the solar cell was performed at AM1.5G, 100mW/cm, as shown in FIG. 32Under the irradiation of standard light intensity, the open-circuit voltage of the solar cell prepared by the embodiment is 2.999V, and the short-circuit current density is 10.4mA/cm2The fill factor is 80.3%, and the efficiency is 25.1%.
Example 3:
the III-V group/silicon heterojunction laminated solar cell used in the method sequentially comprises the following components from top to bottom: Au/Ag and GaAs contact layer of front metal grid line electrode, ZnS/MgF2The solar cell comprises an antireflection film, an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field, a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field, a p-GaAs contact layer, an ITO connecting layer, a transparent conductive adhesive, an ITO connecting layer, a Silicon heterojunction bottom cell electron selection layer n-a-Si H, a passivation layer i-a-Si H, a Silicon substrate n-Silicon, a passivation layer i-a-Si H, a hole selection layer p-a-Si H and a back electrode Al.
In the III-V group/silicon heterojunction laminated solar cell, the band gap of the GaInP absorption layer is 1.91eV, the band gap of the AlGaAs absorption layer is 1.51eV, and the surfaceThe product is 2.2X 2.2cm2。
The III-V/silicon heterojunction tandem solar cell of the present example was prepared by the following method:
1. and placing the textured N-type Fz silicon wafer substrate in a PECVD system with high vacuum degree, and depositing an intrinsic amorphous silicon passivation layer i-a-Si: H on the front surface and the back surface of the silicon wafer respectively.
2. Then, one side is selected to deposit an electron selection layer n-a-Si: H by adopting a PECVD mode, and the other side is deposited with a hole selection layer p-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer p-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing an 80nm ITO material serving as a connecting layer on the n-a-Si: H by adopting an electron beam thermal evaporation mode.
5. A GaAs substrate with the n-type (100) crystal plane inclined at 6 ° along the <100> B crystal direction was placed in the MOCVD system, a 100nm thick GaInP barrier layer was deposited on the front surface, and then a 50nm GaAs contact layer was deposited.
6. And an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field and a p-AlGaAs contact layer are sequentially deposited on the GaAs contact layer.
7. And a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field and a p-GaAs contact layer are sequentially deposited on the p-AlGaAs contact layer.
8. An 80nm ITO material is prepared as a connecting layer in an electron beam thermal evaporation mode.
9. And (3) uniformly stirring 20g of epoxy glue 301A and 5g of epoxy glue 301B, adding 0.625g of silver-plated polymethyl methacrylate (PMMA) microspheres, and uniformly stirring to prepare the transparent conductive adhesive.
10. 100 μ L of the adhesive prepared in step 9 was spin coated on the bottom cell ITO connection layer.
11. And bonding the GaInP/AlGaAs top battery and the HJT bottom battery by using a hot press at the hot pressing temperature of 65 ℃ for 120 min.
12. After the laminated cell is prepared, the GaAs substrate is stripped by adopting a mixed solution of concentrated sulfuric acid and hydrogen peroxide, the GaInP barrier layer is stripped by adopting concentrated HCl, and the GaAs contact layer is stripped by adopting a mixed solution of citric acid and hydrogen peroxide after the metal electrode is evaporated.
The experimental effect is as follows: performance testing of the solar cell was performed at AM1.5G, 100mW/cm, as shown in FIG. 22Under the irradiation of standard light intensity, the open-circuit voltage of the solar cell prepared by the embodiment is 2.988V, and the short-circuit current density is 9.56mA/cm2The fill factor is 79.1%, and the efficiency is 22.8%.
Example 4:
the III-V group/silicon heterojunction laminated solar cell used in the method sequentially comprises the following components from top to bottom: Au/Ag and GaAs contact layer of front metal grid line electrode, ZnS/MgF2The solar cell comprises an antireflection film, an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field, a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field, a p-GaAs contact layer, an ITO connecting layer, a transparent conductive adhesive, an ITO connecting layer, a silicon heterojunction bottom cell electron selection layer n-a-Si H, a passivation layer i-a-Si H, a silicon substrate n-Si, a passivation layer i-a-Si H, a hole selection layer p-a-Si H and a back electrode Al.
In the III-V group/silicon heterojunction laminated solar cell, the band gap of the GaInP absorption layer is 1.91eV, the band gap of the AlGaAs absorption layer is 1.51eV, and the area is 2.2 multiplied by 2.2cm2。
The III-V/silicon heterojunction tandem solar cell of the present example was prepared by the following method:
1. placing the polished Fz silicon wafer substrate with the N-type <100> crystal orientation in a PECVD system with high vacuum degree, and depositing an intrinsic amorphous silicon passivation layer i-a-Si: H on the front surface and the back surface of the silicon wafer respectively.
2. Then, one side is selected to deposit an electron selection layer n-a-Si: H by adopting a PECVD mode, and the other side is deposited with a hole selection layer p-a-Si: H.
3. And (3) performing electron beam thermal evaporation on the H surface of the hole selection layer p-a-Si to obtain ITO serving as a back transparent electrode of the crystalline silicon cell.
4. And preparing an 80nm ITO material serving as a connecting layer on the n-a-Si: H by adopting an electron beam thermal evaporation mode.
5. A GaAs substrate with the n-type (100) crystal plane inclined at 6 ° along the <100> B crystal direction was placed in the MOCVD system, a 100nm thick GaInP barrier layer was deposited on the front surface, and then a 50nm GaAs contact layer was deposited.
6. And an n-AlInP window layer, an n-GaInP absorption layer, a p-AlGaInP back field and a p-AlGaAs contact layer are sequentially deposited on the GaAs contact layer.
7. And a tunneling junction, an n-AlGaAs window layer, a p-AlGaAs absorption layer, a p-GaInP back field and a p-GaAs contact layer are sequentially deposited on the p-AlGaAs contact layer.
8. An 80nm ITO material is prepared as a connecting layer in an electron beam thermal evaporation mode.
9. And (3) uniformly stirring 20g of epoxy glue 301A and 5g of epoxy glue 301B, adding 0.125g of silver-plated polymethyl methacrylate (PMMA) microspheres, and uniformly stirring to prepare the transparent conductive adhesive.
10. 100 μ L of the adhesive prepared in step 9 was spin coated on the bottom cell ITO connection layer.
11. And bonding the GaInP/AlGaAs top battery and the HJT bottom battery by using a hot press at the hot pressing temperature of 65 ℃ for 120 min.
12. After the laminated cell is prepared, the GaAs substrate is stripped by adopting a mixed solution of concentrated sulfuric acid and hydrogen peroxide, the GaInP barrier layer is stripped by adopting concentrated HCl, and the GaAs contact layer is stripped by adopting a mixed solution of citric acid and hydrogen peroxide after the metal electrode is evaporated.
The experimental effect is as follows: performance testing of the solar cell was performed at AM1.5G, 100mW/cm, as shown in FIG. 42Under the irradiation of standard light intensity, the open-circuit voltage of the solar cell prepared by the embodiment is 2.995V, and the short-circuit current density is 9.8mA/cm2The fill factor is 75.3%, and the efficiency is 22.1%.
In summary, the invention develops an efficient III-V group/silicon two-end laminated solar cell, which adopts a crystalline silicon cell with a textured front surface as a bottom cell and forms a two-end laminated structure with a planar III-V top cell through a transparent conductive adhesive. The textured crystalline silicon cell is used as a bottom cell, the long wave absorption of the silicon cell is improved, and the EQE integral current of the silicon cell is increased by 0.6mA/cm2. Meanwhile, the photoelectric property of the bonding layer is adjusted by changing the proportion of the conductive particles in the transparent conductive adhesive, and when the proportion of the conductive particles is increased from 0.05 wt% to 0.5 wt%, the integrated current of the silicon battery EQE is increased by 0.9mA/cm2The filling factor of the laminated battery is increased by 3.5 percent, which shows thatThe optical and electrical properties of the electrically conductive adhesive are effectively increased; when the proportion of the conductive particles is increased from 0.5 wt% to 2.5 wt%, the EQE integrated current of the silicon cell is reduced by 0.84mA/cm2The filling factor of the laminated cell is reduced by 1.2%, which shows that the permeation of the conductive adhesive is reduced, and the conductive particles are increased to cause partial agglomeration, so that the electrical performance is lost. In addition, the textured crystalline silicon cell is compatible with commercial textured crystalline silicon cells, and the cost is effectively reduced.

Claims (10)

1. A high-efficiency III-V group/silicon two-end laminated solar cell adopts a crystal silicon cell with a textured front surface as a bottom cell, and forms a two-end laminated structure with a planar III-V top cell through a transparent conductive adhesive; in the two-end laminated cell, the photoelectric property of the bonding layer is adjusted by changing the proportion of the conductive particles in the transparent conductive adhesive, so that the current matching and bridging of the top cell and the bottom cell are realized.
2. A high efficiency III-V/si two-terminal-stack solar cell as claimed in claim 1, wherein the III-V top cell is single junction GaInP, AlGaAs, GaAs structure, or two junction GaInP/GaAs, GaInP/AlGaAs, GaInP/GaInAsP structure, or three junction AlGaInP/AlGaAs/GaAs, AlGaInP/GaInP/AlGaInAs structure, or four junction AlGaInP/GaInP/AlGaInAs/GaInAs, AlGaInP/GaInP/AlGaAs/GaAs structure.
3. A high efficiency III-V/si two-terminal tandem solar cell as claimed in claim 1, wherein said III-V top cell is fabricated by Liquid Phase Epitaxy (LPE), metal organic vapor deposition (MOCVD), or Molecular Beam Epitaxy (MBE).
4. A high efficiency group III-V/silicon two-terminal tandem solar cell as in claim 1, wherein the conductive particles of transparent conductive adhesive are metal coated Polymethylmethacrylate (PMMA) microspheres.
5. A high efficiency group III-V/silicon two-terminal-stack solar cell as in claim 4, wherein the surface of the conductive particles of the transparent conductive adhesive is coated with one of gold, silver, copper, platinum or palladium.
6. A high efficiency group III-V/silicon two-terminal-stack solar cell as in claim 4, wherein the conductive particle size of the transparent conductive adhesive is 1-50 μm.
7. A high efficiency group III-V/silicon two-terminal tandem solar cell as in claim 1, wherein the polymer in the transparent conductive adhesive is epoxy.
8. A high efficiency III-V/si two-terminal tandem solar cell as in claim 1, wherein said si cell is a double-textured or front-textured si cell.
9. A high efficiency III-V/si two-terminal tandem solar cell as in claim 1, wherein the crystalline silicon cell has a pyramid size of 1-50 μm.
10. A high efficiency III-V/si tandem solar cell as in claim 1, wherein the si cell is a front textured HJT cell, TOP-Con cell, POLO cell, DASH cell, PERC, PERL or PERT cell.
CN202111359268.0A 2021-11-17 2021-11-17 Efficient III-V group/silicon two-end laminated solar cell Pending CN114005900A (en)

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Cited By (1)

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Publication number Priority date Publication date Assignee Title
CN116072750A (en) * 2023-02-22 2023-05-05 四川大学 II-VI compound film/silicon parallel laminated solar cell

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Publication number Priority date Publication date Assignee Title
US20180138337A1 (en) * 2016-11-15 2018-05-17 Alliance For Sustainable Energy, Llc Transparent Conductive Adhesive Materials
CN111554763A (en) * 2020-04-01 2020-08-18 南开大学 High-voltage and high-efficiency perovskite/crystalline silicon laminated battery

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US20180138337A1 (en) * 2016-11-15 2018-05-17 Alliance For Sustainable Energy, Llc Transparent Conductive Adhesive Materials
CN111554763A (en) * 2020-04-01 2020-08-18 南开大学 High-voltage and high-efficiency perovskite/crystalline silicon laminated battery

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116072750A (en) * 2023-02-22 2023-05-05 四川大学 II-VI compound film/silicon parallel laminated solar cell

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