CN113939115A - Processing method of multilayer LCP substrate - Google Patents
Processing method of multilayer LCP substrate Download PDFInfo
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- CN113939115A CN113939115A CN202111528044.8A CN202111528044A CN113939115A CN 113939115 A CN113939115 A CN 113939115A CN 202111528044 A CN202111528044 A CN 202111528044A CN 113939115 A CN113939115 A CN 113939115A
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- 239000000758 substrate Substances 0.000 title claims abstract description 23
- 238000003672 processing method Methods 0.000 title abstract description 5
- 229920002799 BoPET Polymers 0.000 claims abstract description 38
- 229910052802 copper Inorganic materials 0.000 claims abstract description 26
- 239000010949 copper Substances 0.000 claims abstract description 26
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 17
- 238000004519 manufacturing process Methods 0.000 claims abstract description 11
- 239000002131 composite material Substances 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims description 13
- 238000003475 lamination Methods 0.000 claims description 10
- 239000002002 slurry Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 description 5
- 230000005611 electricity Effects 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 229910001152 Bi alloy Inorganic materials 0.000 description 1
- 229920006257 Heat-shrinkable film Polymers 0.000 description 1
- 238000004026 adhesive bonding Methods 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 210000004379 membrane Anatomy 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 210000004400 mucous membrane Anatomy 0.000 description 1
- 229920000139 polyethylene terephthalate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
Images
Classifications
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4623—Manufacturing multilayer circuits by laminating two or more circuit boards the circuit boards having internal via connections between two or more circuit layers before lamination, e.g. double-sided circuit boards
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/4857—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49822—Multilayer substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49838—Geometry or layout
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Geometry (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
Abstract
The invention discloses a processing method of a multilayer LCP substrate, which comprises the following steps: s1: the first layer is made of a pure copper material with the thickness of 12 mu m or 18 mu m, and the second layer to the fourth layer are made of LCP-copper double-layer composite materials with the thickness of more than or equal to 24 mu m; respectively attaching PET films to the top of the first layer and the LCP surfaces of the second layer to the fourth layer, and carrying out pattern manufacturing on the second layer to the fourth layer so as to form circuits on the LCP surfaces of the second layer to the fourth layer; s2: processing positioning holes on the first layer, and processing positioning holes and blind holes on the second layer to the fourth layer; s3: and filling the conductive paste into the blind holes of the second layer to the fourth layer. The invention can improve the product yield and reduce one layer of material, thereby saving the cost.
Description
Technical Field
The invention relates to the field of 5G chips, in particular to a processing method of a multilayer LCP substrate.
Background
With the arrival of the 5G era, the functions of electronic products are more and more, and in order to realize the lightness and thinness of electronic products, the design space reserved for 5G chips is smaller and smaller. The LCP high-frequency material is used as a main raw material of the 5G chip, and the material cost of the LCP high-frequency material accounts for a very high proportion in a 5G chip product. Present multilayer LCP base plate aperture is more and more littleer, and has all seted up the blind hole on the first layer of current multilayer LCP base plate and the second floor, in order to guarantee the on-resistance value of product, need make the blind hole on first layer and the second floor just right completely, nevertheless in order to make the blind hole counterpoint on two levels, the required precision to the lamination is high, nevertheless because the space of LCP substrate is limited, can't further enlarge the aperture, therefore the yield of LCP substrate is difficult to guarantee and manufacturing cost is high.
Disclosure of Invention
The technical problem to be solved by the invention is as follows: a method for processing a multi-layer LCP substrate is provided, which improves the product yield and reduces the production cost.
In order to solve the technical problems, the invention adopts the technical scheme that:
a method of processing a multilayer LCP substrate comprising the steps of:
s1: the first layer is made of a pure copper material with the thickness of 12 mu m or 18 mu m, and the second layer to the fourth layer are made of LCP-copper double-layer composite materials with the thickness of more than or equal to 24 mu m;
respectively attaching PET films to the top of the first layer and the LCP surfaces of the second layer to the fourth layer, and carrying out pattern manufacturing on the second layer to the fourth layer so as to form circuits on the LCP surfaces of the second layer to the fourth layer;
s2: processing positioning holes on the first layer, and processing positioning holes and blind holes on the second layer to the fourth layer;
s3: filling the conductive slurry into the blind holes of the second layer to the fourth layer;
s4: tearing off the PET film on the surfaces of the second layer and the fourth layer, enabling the PET film on the surface of the first layer to face upwards, sequentially stacking the first layer and the fourth layer from top to bottom, and removing the PET film on the surface of the first layer to obtain a finished product.
The invention has the beneficial effects that: according to the invention, the pure copper material with the thickness of only 12 micrometers or 18 micrometers is adopted to replace the existing LCP-copper double-layer composite material, so that the conduction resistance is ensured, the blind holes are all arranged on the second layer to the fourth layer, the blind holes of the first layer and the second layer are not required to be aligned, the aperture of the blind holes can be reduced, the precision requirement on the lamination is greatly reduced, and the product yield and the product stability are further improved.
Drawings
FIG. 1 is a schematic structural diagram of a multilayer LCP substrate with blind holes and positioning holes formed in the second to fourth layers;
FIG. 2 is a schematic view of the structure of the multilayer LCP substrate after the formation of blind holes and positioning holes in the first to fourth layers;
figure 3 is a schematic diagram of the final structure of the multilayer LCP substrate of the present invention.
Description of reference numerals:
1. a first layer; 2. a second layer; 3. a third layer; 4. a fourth layer; 5. a PET film; 6. positioning holes; 7. blind holes; 8. an LCP layer; 9. a copper layer.
Detailed Description
In order to explain technical contents, achieved objects, and effects of the present invention in detail, the following description is made with reference to the accompanying drawings in combination with the embodiments.
Referring to fig. 1 to 3, a method for processing a multi-layer LCP substrate includes the following steps:
s1: the first layer is made of a pure copper material with the thickness of 12 mu m or 18 mu m, and the second layer to the fourth layer are made of LCP-copper double-layer composite materials with the thickness of more than or equal to 24 mu m;
respectively attaching PET films to the top of the first layer and the LCP surfaces of the second layer to the fourth layer, and carrying out pattern manufacturing on the second layer to the fourth layer so as to form circuits on the LCP surfaces of the second layer to the fourth layer;
s2: processing positioning holes on the first layer, and processing positioning holes and blind holes on the second layer to the fourth layer;
s3: filling the conductive slurry into the blind holes of the second layer to the fourth layer;
s4: tearing off the PET film on the surfaces of the second layer and the fourth layer, enabling the PET film on the surface of the first layer to face upwards, sequentially stacking the first layer and the fourth layer from top to bottom, and removing the PET film on the surface of the first layer to obtain a finished product.
The working principle of the invention is as follows:
the pure copper material replaces the existing LCP-copper double-layer composite material, the thickness of the LCP in the second layer is increased, the conduction resistance of the LCP substrate is ensured, the aperture of the blind hole can be reduced, the requirement on the lamination precision is greatly reduced, and the product yield is improved.
From the above description, the beneficial effects of the present invention are: according to the invention, the pure copper material with the thickness of only 12 microns is adopted to replace the existing LCP-copper double-layer composite material, the conduction resistance is ensured, the blind holes are all arranged on the second layer to the fourth layer, the blind holes of the first layer and the second layer do not need to be aligned, the aperture of the blind holes can be reduced, the precision requirement on the lamination is greatly reduced, and the product yield and the product stability are further improved.
Further, the thickness of the second layer was 37 μm.
From the above description, it can be seen that the thickness of the second layer is 37 μm, which can reduce the overall thickness of the LCP substrate.
Furthermore, the positioning holes are formed in two ends of the first layer to the fourth layer in the length direction, and penetrate through the first layer, the second layer, the third layer and the fourth layer.
From the above description, the positioning holes are arranged at the two ends of the first layer to the fourth layer in the length direction, so that the grabbing and the positioning are facilitated.
Further, the PET film attached to the first layer is a heat-reducing film.
Further, the condition of removing the PET film body on the surface of the first layer in the S4 is baking for 30min at the temperature of 80-85 ℃, so that the PET film is naturally separated from the first layer.
According to the description, the thickness of the pure copper material is extremely thin, the PET film layer needs to be attached to prevent the first layer from being wrinkled, meanwhile, in order to avoid damaging the structure of the first layer in the process of tearing the PET film, the PET film attached to the first layer adopts the thermal anti-sticking film, the PET film can be naturally separated from the pure copper material of the first layer through 30min baking at the temperature of 80-85 ℃, the separation difficulty is reduced, and meanwhile, the first layer is not deformed.
Further, before the first layer to the fourth layer are sequentially stacked from top to bottom in the step S4, the first layer to the fourth layer are pressed after glue is dispensed on the second layer, the third layer and the fourth layer through an automatic glue dispenser.
According to the description, the first layer to the fourth layer are glued in a gluing mode, the positioning difficulty during lamination is reduced, and the product yield is improved.
Further, in S4, after removing the PET film on the first layer surface, pressing at a high temperature and forming a circuit on the first layer surface.
Further, in the step S2, the positioning holes and the blind holes are manufactured in a laser manner.
The first embodiment of the invention is as follows:
referring to fig. 1 to 3, a method for processing a multi-layer LCP substrate includes the following steps:
s1: the first layer 1 is made of a pure copper material with the thickness of 12 mu m or 18 mu m, and the second layer 2 to the fourth layer 4 are made of LCP-copper double-layer composite materials with the thickness of more than 24 mu m; preferably, the thickness of the first layer 1 is 1/2 of the second layer 2, and the thicknesses of the second layer 2 to the fourth layer 4 are all equal; specifically, the second, third and fourth layers each comprise an LCP layer 8 and a copper layer 9; the thickness of the first layer 1 is preferably 12 μm in this embodiment, the thickness of the LCP in the second layer 2 is preferably 25 μm, and the copper layer thickness is 12 μm;
attaching PET films 5 to the top of the first layer 1 and LCP surfaces of the second layer 2 to the fourth layer 4 respectively, and carrying out pattern manufacturing on the second layer 2 to the fourth layer 4 so as to form circuits on the LCP surfaces of the second layer 2 to the fourth layer 4;
s2: manufacturing a positioning hole 6 and a blind hole 7 in a laser mode, processing the positioning hole 6 on the first layer 1, and processing the positioning hole 6 and the blind hole 7 on the second layer 2 to the fourth layer 4;
s3: filling the conductive paste into the blind holes 7 of the second layer 2 to the fourth layer 4; preferably, the conductive paste contains tin-copper/tin-bismuth alloy powder and a resin component.
S4: tearing off the PET film 5 on the surfaces of the second layer 2 to the fourth layer 4, enabling the PET film 5 on the surface of the first layer 1 to face upwards, dispensing on the second layer 2, the third layer 3 and the fourth layer 4 through an automatic dispenser, laminating the first layer 1 to the fourth layer 4 from top to bottom in sequence, removing the PET film 5 on the surface of the first layer 1, and manufacturing a circuit on the surface of the first layer 1 through high-temperature lamination to obtain a finished product. Because pure copper can't directly accomplish the circuit preparation, consequently carry out the high temperature pressfitting back, make first layer 1 adhere to and carry out the circuit preparation again on the LCP layer of second layer, make the circuit of first layer can adhere to the LCP layer surface on second layer. Wherein the high-temperature pressing temperature is 300 ℃; the glue for dispensing is high temperature resistant glue. In the lamination process of step S4, the lamination accuracy is set to ± 50 μm. In order to improve the stability of the lamination process, the connection tightness between each layer is improved by adopting a mode of combining static electricity and glue dispensing, wherein the static electricity is generated by a static electricity generator.
Preferably, the PET film 5 to which the first layer 1 is attached is a heat-shrinkable film. Specifically, the specific condition of removing the PET film 5 on the surface of the first layer 1 in the S4 is to bake the PET film 5 at 80-85 ℃ for 30min, so that the PET film 5 and the first layer 1 are naturally separated. The decomposition principle of the PET film 5 is: and (3) baking the PET film at 80-85 ℃ for 30min, and gradually reducing the viscosity of the PET film from 400-600 g weight until the PET film is naturally decomposed in the heating process.
Referring to fig. 2 and 3, the positioning holes 6 are opened at two ends of the first layer 1 to the fourth layer 4 in the length direction, and the positioning holes 6 are all arranged to penetrate through the first layer 1, the second layer 2, the third layer 3 and the fourth layer 4.
LCP base plate in this embodiment is not limited to four-layer, can set to three-layer ~ twelve according to actual demand, and wherein the first layer is pure copper material.
In summary, according to the processing method of the multilayer LCP substrate provided by the present invention, the ultra-thin pure copper material is used to replace the existing LCP-copper composite material and increase the thickness of the LCP layer of the second layer, the conduction resistance value is ensured by ensuring the height of the blind hole, and the aperture of the blind hole can be further reduced, and the volume of the LCP substrate is reduced. Because the first layer adopts ultra-thin pure copper material, the fold appears easily, consequently attached heat subtracts the mucous membrane, adopts the mode of toasting to make its and the first layer separation, can reduce the separation degree of difficulty of PET membrane and first layer to improve the product yield.
The above description is only an embodiment of the present invention, and not intended to limit the scope of the present invention, and all equivalent changes made by using the contents of the present specification and the drawings, or applied directly or indirectly to the related technical fields, are included in the scope of the present invention.
Claims (8)
1. A method for processing a multi-layer LCP substrate, comprising the steps of:
s1: the first layer is made of a pure copper material with the thickness of 12 mu m or 18 mu m, and the second layer to the fourth layer are made of LCP-copper double-layer composite materials with the thickness of more than or equal to 24 mu m;
respectively attaching PET films to the top of the first layer and the LCP surfaces of the second layer to the fourth layer, and carrying out pattern manufacturing on the second layer to the fourth layer so as to form circuits on the LCP surfaces of the second layer to the fourth layer;
s2: processing positioning holes on the first layer, and processing positioning holes and blind holes on the second layer to the fourth layer;
s3: filling the conductive slurry into the blind holes of the second layer to the fourth layer;
s4: tearing off the PET film on the surfaces of the second layer and the fourth layer, enabling the PET film on the surface of the first layer to face upwards, sequentially stacking the first layer and the fourth layer from top to bottom, and removing the PET film on the surface of the first layer to obtain a finished product.
2. A method of processing a multilayer LCP substrate according to claim 1, wherein the thickness of the second layer is 37 μm.
3. The method of fabricating a multilayer LCP substrate according to claim 1, wherein the positioning holes are opened at both ends of the first to fourth layers in the length direction, and the positioning holes are formed through the first, second, third and fourth layers.
4. A method of processing a multilayer LCP substrate of claim 1, wherein the PET film to which the first layer is attached is a heat-reduced film.
5. The method for processing a multi-layer LCP substrate as claimed in claim 4, wherein the PET film removed from the surface of the first layer in S4 is baked at 80-85 ℃ for 30min to separate the PET film from the first layer naturally.
6. The method of claim 1, wherein before the first to fourth layers are sequentially stacked from top to bottom in step S4, the first to fourth layers are laminated after dispensing on the second, third and fourth layers by an automatic dispenser.
7. The method of fabricating a multilayer LCP substrate of claim 1, wherein the PET film on the surface of the first layer is removed in S4, and then a circuit is formed on the surface of the first layer by high temperature lamination.
8. The method of claim 1, wherein the positioning holes and blind holes are processed by laser in S2.
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CN114698234A (en) * | 2022-03-30 | 2022-07-01 | 深圳市信维通信股份有限公司 | Method for combining multi-layer LCP material substrate |
CN114698234B (en) * | 2022-03-30 | 2024-05-31 | 深圳市信维通信股份有限公司 | Method for combining multilayer LCP (liquid crystal display) material substrates |
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