CN113801394A - Preparation method of ETFE film plane material for semiconductor packaging - Google Patents
Preparation method of ETFE film plane material for semiconductor packaging Download PDFInfo
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- CN113801394A CN113801394A CN202111041994.8A CN202111041994A CN113801394A CN 113801394 A CN113801394 A CN 113801394A CN 202111041994 A CN202111041994 A CN 202111041994A CN 113801394 A CN113801394 A CN 113801394A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/18—Manufacture of films or sheets
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2323/00—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers
- C08J2323/02—Characterised by the use of homopolymers or copolymers of unsaturated aliphatic hydrocarbons having only one carbon-to-carbon double bond; Derivatives of such polymers not modified by chemical after treatment
- C08J2323/04—Homopolymers or copolymers of ethene
- C08J2323/08—Copolymers of ethene
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2433/00—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers
- C08J2433/04—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters
- C08J2433/14—Characterised by the use of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides, or nitriles thereof; Derivatives of such polymers esters of esters containing halogen, nitrogen, sulfur, or oxygen atoms in addition to the carboxy oxygen
- C08J2433/16—Homopolymers or copolymers of esters containing halogen atoms
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2467/00—Characterised by the use of polyesters obtained by reactions forming a carboxylic ester link in the main chain; Derivatives of such polymers
- C08J2467/02—Polyesters derived from dicarboxylic acids and dihydroxy compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2483/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
- C08J2483/04—Polysiloxanes
- C08J2483/08—Polysiloxanes containing silicon bound to organic groups containing atoms other than carbon, hydrogen, and oxygen
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/30—Sulfur-, selenium- or tellurium-containing compounds
- C08K2003/3009—Sulfides
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K2201/00—Specific properties of additives
- C08K2201/017—Additives being an antistatic agent
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/02—Elements
- C08K3/04—Carbon
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
- C08K5/41—Compounds containing sulfur bound to oxygen
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- Health & Medical Sciences (AREA)
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Abstract
The invention belongs to the field of ETFE films, and discloses a preparation method of an ETFE film plane material for packaging a semiconductor, which comprises the following steps: 1) weighing materials according to the proportion, putting the materials into a high-speed mixer, and fully mixing, wherein the materials comprise: 50-90 parts of ETFE raw material, 1-3 parts of antioxidant, 2-4 parts of antistatic agent, 1-2 parts of anti-stretching agent, 6-12 parts of wear-resisting agent, 1-2 parts of flame retardant, 2-3 parts of compatilizer and 20-30 parts of crystallization inhibitor. The high-wear-resistance ETFE film is directly produced by adding the wear-resistant agent, and the raw materials are mutually cooperated by matching with the compatilizer and the crystallization inhibitor, so that the ETFE film has wear resistance and excellent performances of static resistance, flame retardance, tensile resistance and the like.
Description
Technical Field
The invention relates to the technical field of ETFE films, in particular to a preparation method of an ETFE film plane material for semiconductor packaging.
Background
The ETFE is an ethylene-tetrafluoroethylene copolymer which is a transparent film material, has excellent shock resistance, electrical property, thermal stability and chemical corrosion resistance, high mechanical strength, environmental protection, recoverability, good processing property and wide application field, and can be suitable for the field of semiconductor packaging.
Although the ETFE film in the prior art has excellent performance in various aspects, the ETFE film has high requirement on the wear resistance of the film in the field of semiconductors or other packaging, and the product is required not to influence the appearance quality after being scratched and rubbed, while the existing ETFE film has weak wear resistance.
Disclosure of Invention
The invention aims to solve the defects in the prior art and provides a preparation method of an ETFE film plane material for packaging a semiconductor.
In order to achieve the purpose, the invention provides the following technical scheme:
a preparation method of an ETFE film plane material for packaging a semiconductor comprises the following steps:
1) weighing materials according to the proportion, putting the materials into a high-speed mixer, and fully mixing, wherein the materials comprise: 50-90 parts of ETFE raw material, 1-3 parts of antioxidant, 2-4 parts of antistatic agent, 1-2 parts of anti-stretching agent, 6-12 parts of wear-resisting agent, 1-2 parts of flame retardant, 2-3 parts of compatilizer and 20-30 parts of crystallization inhibitor;
2) putting the mixed materials into a double-screw extruder for extrusion granulation, wherein the extrusion processing temperature of the double-screw extruder is 200-300 ℃;
3) and (3) placing the granulated material in a casting extruder for melting and extruding to form a film, wherein the melt temperature is 330-350 ℃, the diameter of a primary cooling roller is 800-1000 mm, and the temperature of the primary cooling roller is 60-90 ℃, and finally obtaining the film with the diameter of 20-50 mu m.
As a further description of the above scheme;
the ETFE raw material is in a powder shape, the bulk density is 1-3g/ml, the melt index is 30-40g/10min, and the melting point is 210-250 ℃.
As a further description of the above scheme;
the antioxidant is one or more of semi-hindered phenol antioxidant, phosphite antioxidant and thioether antioxidant.
As a further description of the above scheme;
the wear-resisting agent is composed of the following raw materials in parts by weight: 0.6-0.8% of molybdenum disulfide, 1.0-2.0% of trifluoropropylmethyl polysiloxane, 3.0-4.0% of trihydroxyethyl methyl quaternary ammonium methyl sulfate and the balance of polybutylene terephthalate.
As a further description of the above scheme;
the crystallization inhibitor is selected from perfluoroalkyl polymethacrylate and/or perfluoroalkyl polyethylacrylate.
As a further description of the above scheme;
the antistatic agent is acetylene black.
Compared with the prior art, the invention provides a preparation method of an ETFE film plane material for semiconductor packaging, which has the following beneficial effects:
the high-wear-resistance ETFE film is directly produced by adding the wear-resistant agent, and the raw materials are mutually cooperated by matching with the compatilizer and the crystallization inhibitor, so that the ETFE film has wear resistance and excellent performances of static resistance, flame retardance, tensile resistance and the like.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
a preparation method of an ETFE film plane material for packaging a semiconductor comprises the following steps:
1) weighing the materials according to the proportion, putting the materials into a high-speed mixer, and fully mixing the materials, wherein the materials comprise: 50 parts of ETFE raw material, 1 part of semi-hindered phenol antioxidant, 2 parts of acetylene black, 1 part of anti-stretching agent, 6 parts of wear-resisting agent, 1 part of flame retardant, 2 parts of compatilizer and 20 parts of perfluoroalkyl polymethyl methacrylate;
2) putting the mixed materials into a double-screw extruder for extrusion granulation, wherein the extrusion processing temperature of the double-screw extruder is 200 ℃;
3) and (3) putting the granulated material into a casting extruder to melt and extrude the material into a film, wherein the melt temperature is 330 ℃, the diameter of a primary cooling roller is 800mm, and the temperature of the primary cooling roller is 60 ℃, and finally the film with the thickness of 50 microns is prepared.
Furthermore, the ETFE raw material is in a powder shape, the bulk density is 1-3g/ml, the melt index is 30-40g/10min, and the melting point is 210-250 ℃.
Further, the wear-resisting agent is composed of the following raw materials in parts by weight: 0.6% of molybdenum disulfide, 1.0% of trifluoropropylmethyl polysiloxane, 3.0% of trihydroxyethyl methyl quaternary ammonium methyl sulfate and the balance of polybutylene terephthalate.
Example two:
a preparation method of an ETFE film plane material for packaging a semiconductor comprises the following steps:
1) weighing the materials according to the proportion, putting the materials into a high-speed mixer, and fully mixing the materials, wherein the materials comprise: 90 parts of ETFE raw material, 3 parts of antioxidant, 4 parts of antistatic agent, 2 parts of anti-stretching agent, 12 parts of wear-resisting agent, 2 parts of flame retardant, 23 parts of compatilizer and 30 parts of crystallization inhibitor;
2) putting the mixed materials into a double-screw extruder for extrusion granulation, wherein the extrusion processing temperature of the double-screw extruder is 300 ℃;
3) and (3) putting the granulated material into a casting extruder to melt and extrude the material into a film, wherein the melt temperature is 350 ℃, the diameter of a primary cooling roller is 1000mm, and the temperature of the primary cooling roller is 90 ℃, and finally the film with the diameter of 20 mu m is prepared.
Furthermore, the ETFE raw material is in a powder shape, the bulk density is 1-3g/ml, the melt index is 30-40g/10min, and the melting point is 210-250 ℃.
Further, the antioxidant is one or more of a semi-hindered phenol antioxidant, a phosphite antioxidant and a thioether antioxidant.
Further, the wear-resisting agent is composed of the following raw materials in parts by weight: 0.8% of molybdenum disulfide, 2.0% of trifluoropropylmethyl polysiloxane, 4.0% of trihydroxyethyl methyl quaternary ammonium methyl sulfate and the balance of polybutylene terephthalate.
Further, the crystallization inhibitor is selected from perfluoroalkyl polymethacrylate and/or perfluoroalkyl polyethylacrylate.
Further, the antistatic agent is acetylene black.
According to the scheme, the high-wear-resistance ETFE film is directly produced by adding the wear-resistant agent, and the raw materials are mutually cooperated by matching the compatilizer and the crystallization inhibitor, so that the ETFE film has good performances of static resistance, flame retardance, tensile resistance and the like while having wear resistance.
The foregoing is only a preferred embodiment of the present invention; the scope of the invention is not limited thereto. Any person skilled in the art should be able to cover the technical scope of the present invention by equivalent or modified solutions and modifications within the technical scope of the present invention.
Claims (6)
1. A preparation method of an ETFE film plane material for semiconductor packaging is characterized by comprising the following steps: the method comprises the following steps:
1) weighing materials according to the proportion, putting the materials into a high-speed mixer, and fully mixing, wherein the materials comprise: 50-90 parts of ETFE raw material, 1-3 parts of antioxidant, 2-4 parts of antistatic agent, 1-2 parts of anti-stretching agent, 6-12 parts of wear-resisting agent, 1-2 parts of flame retardant, 2-3 parts of compatilizer and 20-30 parts of crystallization inhibitor;
2) putting the mixed materials into a double-screw extruder for extrusion granulation, wherein the extrusion processing temperature of the double-screw extruder is 200-300 ℃;
3) and (3) placing the granulated material in a casting extruder for melting and extruding to form a film, wherein the melt temperature is 330-350 ℃, the diameter of a primary cooling roller is 800-1000 mm, and the temperature of the primary cooling roller is 60-90 ℃, and finally obtaining the film with the diameter of 20-50 mu m.
2. The method for preparing an ETFE film face material for packaging a semiconductor as claimed in claim 1, wherein: the ETFE raw material is in a powder shape, the bulk density is 1-3g/ml, the melt index is 30-40g/10min, and the melting point is 210-250 ℃.
3. The method for preparing an ETFE film face material for packaging a semiconductor as claimed in claim 1, wherein: the antioxidant is one or more of semi-hindered phenol antioxidant, phosphite antioxidant and thioether antioxidant.
4. The method for preparing an ETFE film face material for packaging a semiconductor as claimed in claim 1, wherein: the wear-resisting agent is composed of the following raw materials in parts by weight: 0.6-0.8% of molybdenum disulfide, 1.0-2.0% of trifluoropropylmethyl polysiloxane, 3.0-4.0% of trihydroxyethyl methyl quaternary ammonium methyl sulfate and the balance of polybutylene terephthalate.
5. The method for preparing an ETFE film face material for packaging a semiconductor as claimed in claim 1, wherein: the crystallization inhibitor is selected from perfluoroalkyl polymethacrylate and/or perfluoroalkyl polyethylacrylate.
6. The method for preparing an ETFE film face material for packaging a semiconductor as claimed in claim 1, wherein: the antistatic agent is acetylene black.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111041994.8A CN113801394A (en) | 2021-09-07 | 2021-09-07 | Preparation method of ETFE film plane material for semiconductor packaging |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111041994.8A CN113801394A (en) | 2021-09-07 | 2021-09-07 | Preparation method of ETFE film plane material for semiconductor packaging |
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| Publication Number | Publication Date |
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| CN113801394A true CN113801394A (en) | 2021-12-17 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202111041994.8A Pending CN113801394A (en) | 2021-09-07 | 2021-09-07 | Preparation method of ETFE film plane material for semiconductor packaging |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114350059A (en) * | 2022-02-11 | 2022-04-15 | 河南源宏高分子新材料有限公司 | ETFE (ethylene-vinyl acetate) thin film panel for perovskite flexible solar panel and preparation method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102167874A (en) * | 2011-03-09 | 2011-08-31 | 日氟荣高分子材料研发（上海）有限公司 | Preparation method of fluorine plastic resin thin film |
| CN111703161A (en) * | 2020-05-07 | 2020-09-25 | 安徽国风塑业股份有限公司 | High-wear-resistance BOPET film and preparation method thereof |
| CN112280163A (en) * | 2020-10-30 | 2021-01-29 | 银金达(上海)新材料有限公司 | ETFE (ethylene-vinyl acetate) thin film panel for perovskite flexible solar panel and preparation method |
| CN113265098A (en) * | 2021-05-13 | 2021-08-17 | 日氟荣高分子材料(上海)有限公司 | High-transparency super-tough ETFE film and preparation method thereof |
-
2021
- 2021-09-07 CN CN202111041994.8A patent/CN113801394A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102167874A (en) * | 2011-03-09 | 2011-08-31 | 日氟荣高分子材料研发（上海）有限公司 | Preparation method of fluorine plastic resin thin film |
| CN111703161A (en) * | 2020-05-07 | 2020-09-25 | 安徽国风塑业股份有限公司 | High-wear-resistance BOPET film and preparation method thereof |
| CN112280163A (en) * | 2020-10-30 | 2021-01-29 | 银金达(上海)新材料有限公司 | ETFE (ethylene-vinyl acetate) thin film panel for perovskite flexible solar panel and preparation method |
| CN113265098A (en) * | 2021-05-13 | 2021-08-17 | 日氟荣高分子材料(上海)有限公司 | High-transparency super-tough ETFE film and preparation method thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114350059A (en) * | 2022-02-11 | 2022-04-15 | 河南源宏高分子新材料有限公司 | ETFE (ethylene-vinyl acetate) thin film panel for perovskite flexible solar panel and preparation method |
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Application publication date: 20211217 |